CN106291792A - A kind of infrared color separation film and preparation method thereof - Google Patents

A kind of infrared color separation film and preparation method thereof Download PDF

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Publication number
CN106291792A
CN106291792A CN201610965085.6A CN201610965085A CN106291792A CN 106291792 A CN106291792 A CN 106291792A CN 201610965085 A CN201610965085 A CN 201610965085A CN 106291792 A CN106291792 A CN 106291792A
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film
color separation
substrate
infrared color
separation film
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CN106291792B (en
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宗杰
张艳敏
孙磊
王斌
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Tianjin Jinhang Institute of Technical Physics
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Tianjin Jinhang Institute of Technical Physics
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    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00Optical elements other than lenses
    • G02B5/20Filters
    • G02B5/208Filters for use with infrared or ultraviolet radiation, e.g. for separating visible light from infrared and/or ultraviolet radiation
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/10Optical coatings produced by application to, or surface treatment of, optical elements
    • G02B1/11Anti-reflection coatings
    • G02B1/113Anti-reflection coatings using inorganic layer materials only
    • G02B1/115Multilayers

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Surface Treatment Of Optical Elements (AREA)

Abstract

The invention discloses a kind of infrared color separation film, comprising: substrate and the dichroic coating system being formed in substrate both side surface and antireflection film system, dichroic coating system is: A/ α L β M γ H/S, antireflection film system is: A/0.45H 1.4L/S, and the symbol implication in film system: A is air, and S is H K9L substrate of glass, it is thin-film material zinc sulfide for H, L is thin-film material aluminium oxide, and M is thin-film material ITO, and α, β and γ represent the multiple of each film system centre wavelength and centre wavelength respectively.Color separation film of the present invention reaches excellent technical specification, without using complicated film structure and very thin thin layer, there are oblique 45 ° of incidences, 1.064 μm transmission 83%, 8 μm~12 μm reflection 86%, effectively light beam wavelength can be guided the detector that different-waveband is corresponding, it is achieved the high accuracy of optical system, miniaturization, high integration and light-weighted target;Color separation film film structure is simple, stable performance, and technological operation is easy, it is easy to accomplish.

Description

A kind of infrared color separation film and preparation method thereof
Technical field
The invention belongs to optical element design field, relate to a kind of infrared color separation film and preparation method thereof.
Background technology
Infrared color separation film has wide in terms of optic analytical instrument, optical detector, multi-mode composite imaging optical system Application prospect, be mainly used in infrared multi-spectral imaging observation and spectrum analysis monitor, China's high-resolution earth observation systems Key special subjects, also proposes research and development demand to infrared color separation film.
The big visual field infrared color separation film of IRMSS, it is desirable to passband average transmittance is high, zone of reflections reflectivity By force, spectral region width, there is high reliability and high stability.
The development of infrared dichroic coating can realize the high accuracy of optical system, miniaturization, high integration and light-weighted mesh Mark, in order to expand the condition and range that infrared system can work, research worker is exploring high performance infrared dichroic coating always, infrared Dichroic coating is always the emphasis of optical thin film research.
At present, the research of infrared color separation film, mainly with the design philosophy that metal inducement is anti-reflection, uses dielectric-metal-medium Film layer structure realizes, and very thin metal layer thickness is extremely sensitive on the impact of the whole curve of spectrum, and due to the suction of metal level Receive, the performance of color separation has been affected;Environmental suitability is poor;Widening of transmission area is to sacrifice absorbance and reflectance as generation Valency, infrared many spectral coverages color separation efficiency is low.
Summary of the invention
(1) goal of the invention
It is an object of the invention to: a kind of infrared color separation film and preparation method thereof is provided, it is achieved 1.064 μm transmissions, 8 μm~12 The color separation film of μm reflection, can guide, incident beam, the detector that different-waveband is corresponding, improve spectrum scanner resolution and become Picture element amount.
(2) technical scheme
In order to solve above-mentioned technical problem, the present invention provides a kind of infrared color separation film, comprising: substrate 2 and be formed at base Dichroic coating system in plate 2 both side surface and antireflection film system, dichroic coating system is: A/ α L β M γ H/S, antireflection film system is: A/ 0.45H 1.4L/S, the symbol implication in film system: A are air, and S is H-K9L substrate of glass, are thin-film material zinc sulfide for H, L For thin-film material aluminium oxide, M is thin-film material ITO, α, β and γ represent respectively each film system centre wavelength and centre wavelength times Number.
Wherein, the H-K9L glass of a diameter of 40mm, thickness 1mm selected by described substrate 2, its aperture N≤3, surface, local light Circle Δ N≤0.5, nonparallelism < 30 ", surface smoothness B=V.
Wherein, in described dichroic coating system, α=0.245, β=1.55, γ=0.205.
Present invention also offers the preparation method of a kind of infrared color separation film, it comprises the following steps:
S1: vacuum chamber cleans;
S2: before plated film, substrate cleans;
S3: vacuum chamber prepares
Preset Coating Materials aluminium oxide, ITO and zinc sulfide in vacuum chamber electron gun crucible;
S4: film layer is coated with
Open ion source, use ion beam cleaning substrate;According to the dichroic coating system in substrate both side surface and antireflection film system Structure, utilizes electron beam evaporation methods to carry out film deposition.
Wherein, in described step S4, film layer is coated with in step, and ion source uses argon as working gas, working gas Purity is not less than 99.995%, gas flow 20sccm.
Wherein, in described step S4, before film layer is coated with, by substrate heating to 300 ± 10 DEG C, and keep 1h.
Wherein, in described step S4, by design film system, by aluminium oxide, ITO and zinc sulfide alternately evaporation to the both sides of substrate On surface, wherein
During pellumina deposition, ion source argon gas flow 18 ± 2sccm, oxygen gas flow 25 ± 3sccm, ion Source bundle pressure 180V~250V, ion source line 80V~120V, control sedimentation rate 0.2-0.5nm/s;
During ito film deposition, oxygen gas flow 25 ± 5sccm, sedimentation rate 0.5-1nm/s;
After ito film has deposited, keep oxygenation capacity constant, cool to 200 ± 10 DEG C, carry out ZnS-film deposition;
During ZnS-film deposition, temperature 200 ± 10 DEG C, ion source argon gas flow 18 ± 2sccm, ion beam pressure 180V~220V, ion source line 80V~110V, sedimentation rate 0.05-0.1nm/s.
Wherein, in described step S1, clean vacuum chamber of film coating machine protective shield, electrode, baffle plate and frock with sandblasting machine, then Dip in dehydrated alcohol with absorbent carbasus and clean vacuum chamber.
Wherein, in described step S2, dip in the ethanol of volume ratio 1:1, ether mixing with absorbent carbasus and defat cotton successively Solution cleans substrate surface.
Wherein, step S5 is also included: substrate is lowered the temperature, and is not less than 2 × 10 in vacuum-3Pa, cools to 80 ± 8 DEG C, and closedown is taken out Vacuum system, vacuum chamber takes out after dropping to room temperature and deposits infrared color separation film.
(3) beneficial effect
Infrared color separation film that technique scheme is provided and preparation method thereof, color separation film reaches excellent technical specification, Without using complicated film structure and very thin thin layer, there is oblique 45 ° of incidences, 1.064 μm transmissions 83%, 8 μm~the reflection of 12 μm 86%, effectively light beam wavelength can be guided detector corresponding to different-waveband, it is achieved the high accuracy of optical system, miniaturization, High integration and light-weighted target;Color separation film film structure is simple, stable performance, and technological operation is easy, it is easy to accomplish, the most in fact Existing through engineering approaches application.
Accompanying drawing explanation
Fig. 1 is that infrared color separation film front arranges schematic diagram with anti-face mask layer, and wherein 1 is dichroic coating system, and 2 is substrate, 3 For antireflection film system.
Fig. 2 is the example curve of infrared color separation film transmittance and wavelength.
Detailed description of the invention
For making the purpose of the present invention, content and advantage clearer, below in conjunction with the accompanying drawings and embodiment, the tool to the present invention Body embodiment is described in further detail.
In order to solve technical problem present in prior art, the present invention, by design, test, develops a kind of 1.064 μ M transmission, the infrared color separation film of 8~12 μm reflections, it is with H-K9L glass as substrate, and aluminium oxide, tin indium oxide are (hereinafter referred to as ITO, In2O3: SnO2=95:5) and zinc sulfide be film material, use vacuum film deposition method prepare, by simple film Architecture realizes color separation function, and technique is easily controllable, prepares color separation film 1.064 μm transmittance and is more than 83%, 8 μm~the reflection of 12 μm Ratio is more than 86%, and product optical property, the physical strength of film layer and environmental suitability meet actual operation requirements.
Specifically, with reference to shown in Fig. 1, the infrared color separation film of the present embodiment includes substrate 2 and is formed in substrate 2 both side surface Dichroic coating system and antireflection film system, dichroic coating system is: A/ α L β M γ H/S, antireflection film system is: A/0.45H 1.4L/S, film Symbol implication in system: A is air, and S is H-K9L substrate of glass, is thin-film material zinc sulfide for H, and L is thin-film material oxidation Aluminum, M is thin-film material ITO, and α, β and γ represent the multiple of each film system centre wavelength and centre wavelength respectively.
Wherein, the H-K9L glass of a diameter of 40mm, thickness 1mm selected by substrate 2, its aperture N≤3, surface, locally aperture Δ N≤0.5, nonparallelism < 30 ", surface smoothness B=V;In dichroic coating system, α=0.245, β=1.55, γ=0.205.
Based on above-mentioned infrared color separation film, its preparation method comprises the following steps:
The first step, vacuum chamber cleans
Clean vacuum chamber of film coating machine protective shield, electrode, baffle plate and frock with sandblasting machine, after cleaning, be cleaned by part surface not Film layer must be had to adhere to, then dip in dehydrated alcohol with absorbent carbasus and clean vacuum chamber.
Second step, cleans before plated film
Successively with absorbent carbasus and defat cotton dip in wet ethanol, ether mixed solution (volume ratio 1:1) is cleaned surface, and is used " method of breathing out " inspection film surface, till without greasy dirt, grit, scratch.
3rd step, vacuum chamber prepares
Appropriate Coating Materials aluminium oxide, ITO and zinc sulfide are put into electron gun crucible (for 1000mm coater, Aluminium oxide, ITO and zinc sulfide are respectively 50g, 100g, 100g), Coating Materials purity is not less than 99.99%, blows base with ear washing bulb Sheet surface, closes door for vacuum chamber immediately after.
4th step, film layer is coated with
Vacuum is not less than 2 × 10-3Pa, opens swivel mount switch, rotational workpieces frame, opens baking, set baking temperature. Open electron gun deflection power, filament supply and rifle high pressure the most successively.
Opening ion source, with ion beam cleaning substrate 5min, ion source uses argon as working gas, and working gas is pure Degree, not less than 99.995%, gas flow 20sccm, utilizes the electron beam evaporation methods of Assisted by Ion Beam to carry out film deposition.
By substrate heating to 300 ± 10 DEG C (optimum 300 DEG C), and keep 1h.
By design film system, by aluminium oxide, ITO and zinc sulfide alternately evaporation to two faces of substrate.Coating Materials deposits Parameter is as follows:
(1) pellumina deposition
Ion source argon gas flow 18 ± 2sccm, oxygen gas flow 25 ± 3sccm, ion beam pressure 180V~ 250V, ion source line 80V~120V, regulate electron gun current, full and uniform fritting coating materials, opens baffle plate, controls deposition speed Rate 0.2-0.5nm/s;
This technological parameter can improve film layer and substrate adhesion, it is achieved thin-film refractive index mates, and meets film layer environment and adapts to Property requirement.
(2) ito film deposition
Close ion source, oxygen gas flow 25 ± 5sccm, regulate electron gun current, open baffle plate, sedimentation rate 0.5- 1nm/s;
After ito film has deposited, keep oxygenation capacity constant, cool to 200 ± 10 DEG C, carry out ZnS-film deposition;
Under this technological parameter, use electron gun deposition doped ITO (In2O3: SnO2=95:5) Coating Materials, can improve The film layer transmitance at passband and the reflectance of the zone of reflections, it is ensured that film layer optical property.
(3) ZnS-film deposition
Temperature 200 ± 10 DEG C, ion source argon gas flow 18 ± 2sccm, ion beam pressure 180V~220V, ion source Line 80V~110V, regulates electron gun current, full and uniform fritting coating materials, opens baffle plate, sedimentation rate 0.05-0.1nm/s;
This technological parameter can improve ito film layer stability, it is achieved thin-film refractive index mates, and meets film layer environment and adapts to Property requirement.
5th step, substrate is lowered the temperature.
It is not less than 2 × 10 in vacuum-3Pa, cools to 80 ± 8 DEG C, closes pumped vacuum systems, and vacuum chamber takes after dropping to room temperature Go out to deposit eyeglass.
Shown in reference Fig. 2, infrared color separation film spectrophotometric result number prepared by the present embodiment, reach design requirement.
The above is only the preferred embodiment of the present invention, it is noted that for the ordinary skill people of the art For Yuan, on the premise of without departing from the technology of the present invention principle, it is also possible to make some improvement and deformation, these improve and deformation Also should be regarded as protection scope of the present invention.

Claims (10)

1. an infrared color separation film, it is characterised in that including: substrate (2) and the dichroic coating being formed in substrate (2) both side surface System and antireflection film system, dichroic coating system is: A/ α L β M γ H/S, antireflection film system is: A/0.45H 1.4L/S, the symbol in film system Number implication: A is air, and S is H-K9L substrate of glass, is thin-film material zinc sulfide for H, and L is thin-film material aluminium oxide, and M is thin film Material ITO, α, β and γ represent the multiple of each film system centre wavelength and centre wavelength respectively.
Infrared color separation film the most as claimed in claim 1, it is characterised in that described substrate (2) selects a diameter of 40mm, thickness The H-K9L glass of 1mm, its aperture N≤3, surface, locally aperture Δ N≤0.5, nonparallelism < 30 ", surface smoothness B=V.
Infrared color separation film the most as claimed in claim 1, it is characterised in that in described dichroic coating system, α=0.245, β=1.55, γ=0.205.
4. the preparation method of the infrared color separation film according to any one of claim 1-3, it is characterised in that include following step Rapid:
S1: vacuum chamber cleans;
S2: before plated film, substrate cleans;
S3: vacuum chamber prepares
Preset Coating Materials aluminium oxide, ITO and zinc sulfide in vacuum chamber electron gun crucible;
S4: film layer is coated with
Open ion source, use ion beam cleaning substrate;According to the dichroic coating system in substrate both side surface and antireflection film system structure, Electron beam evaporation methods is utilized to carry out film deposition.
The preparation method of infrared color separation film the most as claimed in claim 4, it is characterised in that in described step S4, film layer is coated with In step, ion source uses argon to be not less than 99.995% as working gas, working gas purity, gas flow 20sccm.
The preparation method of infrared color separation film the most as claimed in claim 5, it is characterised in that in described step S4, film layer is coated with Before, by substrate heating to 300 ± 10 DEG C, and keep 1h.
The preparation method of infrared color separation film the most as claimed in claim 6, it is characterised in that in described step S4, by design film System, is alternately deposited with aluminium oxide, ITO and zinc sulfide in the both side surface of substrate, wherein
During pellumina deposition, ion source argon gas flow 18 ± 2sccm, oxygen gas flow 25 ± 3sccm, ion beam Pressure 180V~250V, ion source line 80V~120V, control sedimentation rate 0.2-0.5nm/s;
During ito film deposition, oxygen gas flow 25 ± 5sccm, sedimentation rate 0.5-1nm/s;
After ito film has deposited, keep oxygenation capacity constant, cool to 200 ± 10 DEG C, carry out ZnS-film deposition;
ZnS-film deposition time, temperature 200 ± 10 DEG C, ion source argon gas flow 18 ± 2sccm, ion beam pressure 180V~ 220V, ion source line 80V~110V, sedimentation rate 0.05-0.1nm/s.
The preparation method of infrared color separation film the most as claimed in claim 4, it is characterised in that in described step S1, use sandblasting machine Clean vacuum chamber of film coating machine protective shield, electrode, baffle plate and frock, then dip in dehydrated alcohol with absorbent carbasus and clean vacuum chamber.
The preparation method of infrared color separation film the most as claimed in claim 4, it is characterised in that in described step S2, successively with de- Fat gauze and defat cotton dip in the ethanol of volume ratio 1:1, ether mixed solution cleans substrate surface.
The preparation method of infrared color separation film the most as claimed in claim 4, it is characterised in that also include step S5: substrate drops Temperature, is not less than 2 × 10 in vacuum-3Pa, cools to 80 ± 8 DEG C, closes pumped vacuum systems, and vacuum chamber takes out deposition after dropping to room temperature Infrared color separation film.
CN201610965085.6A 2016-11-04 2016-11-04 A kind of infrared color separation film and preparation method thereof Active CN106291792B (en)

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CN107254667A (en) * 2017-06-06 2017-10-17 中国科学院半导体研究所 Optical medium film, Al2O3, silicon-containing film, the preparation method of laser chamber facial mask
CN107479190A (en) * 2017-08-15 2017-12-15 天津津航技术物理研究所 A kind of visible ray and LONG WAVE INFRARED all dielectric film recombination dichroic elements and design method
CN107515438A (en) * 2017-09-06 2017-12-26 天津津航技术物理研究所 A kind of infrared wide spectrum cut-off laser of narrowband beam splitter
CN110527955A (en) * 2019-09-30 2019-12-03 长春理工大学 A kind of step low-refraction Al2O3The preparation method of film

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107254667A (en) * 2017-06-06 2017-10-17 中国科学院半导体研究所 Optical medium film, Al2O3, silicon-containing film, the preparation method of laser chamber facial mask
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CN107479190B (en) * 2017-08-15 2019-08-16 天津津航技术物理研究所 A kind of visible light and LONG WAVE INFRARED all dielectric film recombination dichroic elements and design method
CN107515438A (en) * 2017-09-06 2017-12-26 天津津航技术物理研究所 A kind of infrared wide spectrum cut-off laser of narrowband beam splitter
CN110527955A (en) * 2019-09-30 2019-12-03 长春理工大学 A kind of step low-refraction Al2O3The preparation method of film

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