CN106282970A - 低压化学气相沉淀腔的导气支撑管 - Google Patents

低压化学气相沉淀腔的导气支撑管 Download PDF

Info

Publication number
CN106282970A
CN106282970A CN201610885385.3A CN201610885385A CN106282970A CN 106282970 A CN106282970 A CN 106282970A CN 201610885385 A CN201610885385 A CN 201610885385A CN 106282970 A CN106282970 A CN 106282970A
Authority
CN
China
Prior art keywords
inducing
propped
stay tube
pivoted housing
airway
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201610885385.3A
Other languages
English (en)
Inventor
吕耀安
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Beijing informed investment home intellectual property rights Operation Co., Ltd.
Original Assignee
WUXI HI-NANO TECHNOLOGY Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by WUXI HI-NANO TECHNOLOGY Co Ltd filed Critical WUXI HI-NANO TECHNOLOGY Co Ltd
Priority to CN201610885385.3A priority Critical patent/CN106282970A/zh
Publication of CN106282970A publication Critical patent/CN106282970A/zh
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45559—Diffusion of reactive gas to substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45578—Elongated nozzles, tubes with holes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

本发明涉及一种低压化学气相沉淀腔的导气支撑管，包括一竖直置于腔体中的导气支撑管，所述导气支撑管的管壁上间隔设有多个导气孔，所述导气孔处套设有转套，所述转套上安装有横置的导气管，所述导气管的管壁上均布有出气孔，上下相邻的转套之间的导气支撑管上安装有夹持晶圆的夹头。本发明中，将导气结构及用于支撑晶圆的支撑结构结合一起，简化腔体内部结构，并且合理设置的导气管，大大提高反应气体与晶圆的接触均匀度。

Description

低压化学气相沉淀腔的导气支撑管
技术领域
本发明涉及半导体技术领域，特别涉及晶圆的化学气相沉淀腔。
背景技术
低压化学气相沉淀是指将沉淀腔中抽成低压状态，将反应气体置入沉淀腔中，反应气体扩散至沉淀腔中的晶圆表面，在晶圆表面附近的反应区发生反应形成薄膜。现有的低压化学沉淀腔的结构设计不合理，反应气体不能均匀的扩散至晶圆表面，导致形成的薄膜厚度不均匀。
发明内容
针对现有技术存在的上述问题，申请人进行研究及改进，提供一种低压化学气相沉淀腔的导气支撑管，其提高反应气体的扩散均匀性，提高薄膜的成型均匀度。
为了解决上述问题，本发明采用如下方案：
一种低压化学气相沉淀腔的导气支撑管，包括一竖直置于腔体中的导气支撑管，所述导气支撑管的管壁上间隔设有多个导气孔，所述导气孔处套设有转套，所述转套上安装有横置的导气管，所述导气管的管壁上均布有出气孔，上下相邻的转套之间的导气支撑管上安装有夹持晶圆的夹头。
本发明的技术效果在于：
本发明中，将导气结构及用于支撑晶圆的支撑结构结合一起，简化腔体内部结构，并且合理设置的导气管，大大提高反应气体与晶圆的接触均匀度。
附图说明
图1为本发明的结构示意图。
图2为本发明中导气支撑管的结构图。
图3为本发明中导气支撑管的局部结构图。
图中：1、腔体；2、导气支撑管；3、转套；4、导气管；5、出气孔；6、晶圆；7、夹头。
具体实施方式
下面结合附图对本发明的具体实施方式作进一步说明。
如图1、图2及图3所示，本实施例的低压化学气相沉淀腔的导气支撑管，包括一竖直置于腔体1中的导气支撑管2，导气支撑管2的管壁上间隔设有多个导气孔，导气孔处套设有转套3，转套3上安装有横置的导气管4，导气管4的管壁上均布有出气孔5，上下相邻的转套3之间的导气支撑管2上安装有夹持晶圆6的夹头7。使用时，将反应气体从导气支撑管2中通入腔体1中，反应气体进入导气管4中，并从管壁的出气孔5中导出至晶圆表面。
以上所举实施例为本发明的较佳实施方式，仅用来方便说明本发明，并非对本发明作任何形式上的限制，任何所属技术领域中具有通常知识者，若在不脱离本发明所提技术特征的范围内，利用本发明所揭示技术内容所作出局部改动或修饰的等效实施例，并且未脱离本发明的技术特征内容，均仍属于本发明技术特征的范围内。

Claims (1)

1.一种低压化学气相沉淀腔的导气支撑管，其特征在于：包括一竖直置于腔体(1)中的导气支撑管(2)，所述导气支撑管(2)的管壁上间隔设有多个导气孔，所述导气孔处套设有转套(3)，所述转套(3)上安装有横置的导气管(4)，所述导气管(4)的管壁上均布有出气孔(5)，上下相邻的转套(3)之间的导气支撑管(2)上安装有夹持晶圆(6)的夹头(7)。
CN201610885385.3A 2016-10-10 2016-10-10 低压化学气相沉淀腔的导气支撑管 Pending CN106282970A (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201610885385.3A CN106282970A (zh) 2016-10-10 2016-10-10 低压化学气相沉淀腔的导气支撑管

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201610885385.3A CN106282970A (zh) 2016-10-10 2016-10-10 低压化学气相沉淀腔的导气支撑管

Publications (1)

Publication Number Publication Date
CN106282970A true CN106282970A (zh) 2017-01-04

Family

ID=57718497

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201610885385.3A Pending CN106282970A (zh) 2016-10-10 2016-10-10 低压化学气相沉淀腔的导气支撑管

Country Status (1)

Country Link
CN (1) CN106282970A (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112899656A (zh) * 2019-12-04 2021-06-04 江苏菲沃泰纳米科技股份有限公司 镀膜装置的进气系统

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2213835A (en) * 1987-12-18 1989-08-23 Gen Electric Co Plc Deposition apparatus
US6194030B1 (en) * 1999-03-18 2001-02-27 International Business Machines Corporation Chemical vapor deposition velocity control apparatus
CN201437552U (zh) * 2009-06-12 2010-04-14 中芯国际集成电路制造(上海)有限公司 进气系统
CN102094189A (zh) * 2011-03-14 2011-06-15 福建钧石能源有限公司 化学气相沉积反应设备
CN202380075U (zh) * 2011-11-04 2012-08-15 无锡华润华晶微电子有限公司 一种低压化学气相淀积装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2213835A (en) * 1987-12-18 1989-08-23 Gen Electric Co Plc Deposition apparatus
US6194030B1 (en) * 1999-03-18 2001-02-27 International Business Machines Corporation Chemical vapor deposition velocity control apparatus
CN201437552U (zh) * 2009-06-12 2010-04-14 中芯国际集成电路制造(上海)有限公司 进气系统
CN102094189A (zh) * 2011-03-14 2011-06-15 福建钧石能源有限公司 化学气相沉积反应设备
CN202380075U (zh) * 2011-11-04 2012-08-15 无锡华润华晶微电子有限公司 一种低压化学气相淀积装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112899656A (zh) * 2019-12-04 2021-06-04 江苏菲沃泰纳米科技股份有限公司 镀膜装置的进气系统
CN112899656B (zh) * 2019-12-04 2022-11-18 江苏菲沃泰纳米科技股份有限公司 镀膜装置的进气系统

Similar Documents

Publication Publication Date Title
CN105964192A (zh) 气相反应器和气相反应器系统
US20180087152A1 (en) Substrate processing apparatus, nozzle base, and manufacturing method for semiconductor device
JP6554418B2 (ja) タングステン膜の成膜方法および成膜装置
KR101725902B1 (ko) 기판 처리 장치, 반도체 장치의 제조 방법 및 기록 매체
US20150275367A1 (en) Gas Supply Mechanism, Gas Supplying Method, Film Forming Apparatus and Film Forming Method Using the Same
US20130340678A1 (en) Gas supply apparatus and film forming apparatus
SG11201808114VA (en) Substrate processing apparatus, method of manufacturing semiconductor device, and recording medium
WO2017138185A1 (ja) 基板処理装置、基板保持具及び載置具
CN106282970A (zh) 低压化学气相沉淀腔的导气支撑管
KR20190096257A (ko) 기판 처리 장치, 반도체 장치의 제조 방법 및 기록 매체
CN110735124A (zh) 成膜装置、原料供给装置以及成膜方法
TW201920754A (zh) 氣體供給裝置及成膜裝置
KR20110126048A (ko) 성막 방법 및 성막 장치
KR20160086242A (ko) 기판 처리 장치, 가스 분산 유닛, 반도체 장치의 제조 방법 및 기록 매체
US9390907B2 (en) Film forming method of SiCN film
TWI743313B (zh) 成膜方法
US9552981B2 (en) Method and apparatus for forming metal oxide film
KR102391762B1 (ko) 열처리 장치 및 열처리 방법
WO2015183483A1 (en) Method and apparatus for improving gas flow in a substrate processing chamber
US20140290752A1 (en) Processing method and processing apparatus
CN106245111A (zh) 低压化学气相沉淀腔的晶圆支撑结构
CN106245004A (zh) 内外喷气式低压化学气相沉淀腔
CN106399971A (zh) 导气支撑一体式低压化学气相沉淀腔
KR20210023715A (ko) 기판 처리 방법 및 기판 처리 장치
JPH04184923A (ja) 熱処理装置

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
TA01 Transfer of patent application right

Effective date of registration: 20180823

Address after: 102600 3 floor, 2 building, No. 4 Daxing District Garden Road, Beijing, 1 unit 317

Applicant after: Beijing informed investment home intellectual property rights Operation Co., Ltd.

Address before: 214000 Jiangsu Wuxi New District, Qingyuan Road 20, Taihu international science and Technology Park, sensor network university science and Technology Park, D building, first floor

Applicant before: Wuxi Hi-Nano Technology Co., Ltd.

TA01 Transfer of patent application right
RJ01 Rejection of invention patent application after publication

Application publication date: 20170104

RJ01 Rejection of invention patent application after publication