CN106399971A - 导气支撑一体式低压化学气相沉淀腔 - Google Patents

导气支撑一体式低压化学气相沉淀腔 Download PDF

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Publication number
CN106399971A
CN106399971A CN201610885426.9A CN201610885426A CN106399971A CN 106399971 A CN106399971 A CN 106399971A CN 201610885426 A CN201610885426 A CN 201610885426A CN 106399971 A CN106399971 A CN 106399971A
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gas guide
support
cavity
inducing
gas
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CN201610885426.9A
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吕耀安
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WUXI HI-NANO TECHNOLOGY Co Ltd
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WUXI HI-NANO TECHNOLOGY Co Ltd
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Priority to CN201610885426.9A priority Critical patent/CN106399971A/zh
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45559—Diffusion of reactive gas to substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)

Abstract

本发明涉及一种导气支撑一体式低压化学气相沉淀腔，包括腔体，所述腔体中内置有导气结构及用于支撑晶圆的支撑结构，所述导气结构及支撑结构为一体结构，包括一竖直置于腔体中的导气支撑管，所述导气支撑管的管壁上间隔设有多个导气孔，所述导气孔处套设有转套，所述转套上安装有横置的导气管，所述导气管的管壁上均布有出气孔，上下相邻的转套之间的导气支撑管上安装有夹持晶圆的夹头。本发明中，将导气结构及用于支撑晶圆的支撑结构结合一起，简化腔体内部结构，并且合理设置的导气管，大大提高反应气体与晶圆的接触均匀度。

Description

导气支撑一体式低压化学气相沉淀腔
技术领域
本发明涉及半导体技术领域，特别涉及晶圆的化学气相沉淀腔。
背景技术
低压化学气相沉淀是指将沉淀腔中抽成低压状态，将反应气体置入沉淀腔中，反应气体扩散至沉淀腔中的晶圆表面，在晶圆表面附近的反应区发生反应形成薄膜。现有的低压化学沉淀腔的结构设计不合理，反应气体不能均匀的扩散至晶圆表面，导致形成的薄膜厚度不均匀。
发明内容
针对现有技术存在的上述问题，申请人进行研究及改进，提供一种导气支撑一体式低压化学气相沉淀腔，提高反应气体的扩散均匀性，提高薄膜的成型均匀度。
为了解决上述问题，本发明采用如下方案：
一种导气支撑一体式低压化学气相沉淀腔，包括腔体，所述腔体中内置有导气结构及用于支撑晶圆的支撑结构，所述导气结构及支撑结构为一体结构，包括一竖直置于腔体中的导气支撑管，所述导气支撑管的管壁上间隔设有多个导气孔，所述导气孔处套设有转套，所述转套上安装有横置的导气管，所述导气管的管壁上均布有出气孔，上下相邻的转套之间的导气支撑管上安装有夹持晶圆的夹头。
本发明的技术效果在于：
本发明中，将导气结构及用于支撑晶圆的支撑结构结合一起，简化腔体内部结构，并且合理设置的导气管，大大提高反应气体与晶圆的接触均匀度。
附图说明
图1为本发明的结构示意图。
图中：1、腔体；2、导气支撑管；3、转套；4、导气管；5、出气孔；6、晶圆；7、夹头。
具体实施方式
下面结合附图对本发明的具体实施方式作进一步说明。
如图1所示，本实施例的导气支撑一体式低压化学气相沉淀腔，包括腔体1，腔体1中内置有导气结构及用于支撑晶圆的支撑结构，导气结构及支撑结构为一体结构，包括一竖直置于腔体1中的导气支撑管2，导气支撑管2的管壁上间隔设有多个导气孔，导气孔处套设有转套3，转套3上安装有横置的导气管4，导气管4的管壁上均布有出气孔5，上下相邻的转套3之间的导气支撑管2上安装有夹持晶圆6的夹头7。使用时，将反应气体从导气支撑管2中通入腔体1中，反应气体进入导气管4中，并从管壁的出气孔5中导出至晶圆表面。
以上所举实施例为本发明的较佳实施方式，仅用来方便说明本发明，并非对本发明作任何形式上的限制，任何所属技术领域中具有通常知识者，若在不脱离本发明所提技术特征的范围内，利用本发明所揭示技术内容所作出局部改动或修饰的等效实施例，并且未脱离本发明的技术特征内容，均仍属于本发明技术特征的范围内。

Claims (1)

1.一种导气支撑一体式低压化学气相沉淀腔，包括腔体(1)，所述腔体(1)中内置有导气结构及用于支撑晶圆的支撑结构，其特征在于：所述导气结构及支撑结构为一体结构，包括一竖直置于腔体(1)中的导气支撑管(2)，所述导气支撑管(2)的管壁上间隔设有多个导气孔，所述导气孔处套设有转套(3)，所述转套(3)上安装有横置的导气管(4)，所述导气管(4)的管壁上均布有出气孔(5)，上下相邻的转套(3)之间的导气支撑管(2)上安装有夹持晶圆(6)的夹头(7)。
CN201610885426.9A 2016-10-10 2016-10-10 导气支撑一体式低压化学气相沉淀腔 Pending CN106399971A (zh)

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5143018A (en) * 1987-12-18 1992-09-01 The General Electric Company, P.L.C. Apparatus for depositing uniform films by how-pressure chemical vapor deposition
US6194030B1 (en) * 1999-03-18 2001-02-27 International Business Machines Corporation Chemical vapor deposition velocity control apparatus
CN201437552U (zh) * 2009-06-12 2010-04-14 中芯国际集成电路制造(上海)有限公司 进气系统
CN102094189A (zh) * 2011-03-14 2011-06-15 福建钧石能源有限公司 化学气相沉积反应设备
CN202380075U (zh) * 2011-11-04 2012-08-15 无锡华润华晶微电子有限公司 一种低压化学气相淀积装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5143018A (en) * 1987-12-18 1992-09-01 The General Electric Company, P.L.C. Apparatus for depositing uniform films by how-pressure chemical vapor deposition
US6194030B1 (en) * 1999-03-18 2001-02-27 International Business Machines Corporation Chemical vapor deposition velocity control apparatus
CN201437552U (zh) * 2009-06-12 2010-04-14 中芯国际集成电路制造(上海)有限公司 进气系统
CN102094189A (zh) * 2011-03-14 2011-06-15 福建钧石能源有限公司 化学气相沉积反应设备
CN202380075U (zh) * 2011-11-04 2012-08-15 无锡华润华晶微电子有限公司 一种低压化学气相淀积装置

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Application publication date: 20170215