CN106282945B - A kind of preparation method of ultra-pure aluminum target - Google Patents

A kind of preparation method of ultra-pure aluminum target Download PDF

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Publication number
CN106282945B
CN106282945B CN201610846416.4A CN201610846416A CN106282945B CN 106282945 B CN106282945 B CN 106282945B CN 201610846416 A CN201610846416 A CN 201610846416A CN 106282945 B CN106282945 B CN 106282945B
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ultra
pure aluminum
ingot casting
hot rolling
aluminum target
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CN106282945A (en
Inventor
冉继龙
李谢华
黄瑞银
徐始祥
罗筱雄
陈国生
詹开严
刘华春
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Chinalco Ruimin Co Ltd
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Chinalco Ruimin Co Ltd
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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/3407Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22FCHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/04Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of aluminium or alloys based thereon

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Metal Rolling (AREA)

Abstract

The present invention relates to a kind of preparation methods of ultra-pure aluminum target, include the following steps:(1)Ultra-pure aluminum ingot casting by purity more than 99.999wt% carries out surface milling, removes the oxide layer on surface;(2)Ingot casting is heated to 230~400 DEG C;(3)Ingot casting after heating is carried out to the hot rolling of 10 ~ 20 passages, single pass rolling reduction is controlled in 20 ~ 60mm, controls the finishing temperature of final pass at 350 DEG C or less;(4)To complete hot rolling aluminium sheet into trip temperature be 200~300 DEG C, soaking time be 1~2h annealing;(5)To carrying out Milling Process, ultra-pure aluminum target of the acquisition average crystal grain in 80~150um after plank leveling.The present invention can prepare purity height, and crystal grain is tiny and uniform target, and texture is orientated consistent, meets the requirement of PVD;It is simple for process simultaneously, it is easily operated, it is convenient for large-scale industrial production, effectively reduces energy consumption, reduce cost.

Description

A kind of preparation method of ultra-pure aluminum target
Technical field
The present invention relates to a kind of metal material processing technologies, specifically design a kind of preparation method of ultra-pure aluminum target.
Background technology
TFT-LCD (Thin film transistor-Liquid crystal display) tft liquid crystal is aobvious Show device, be commonly called as liquid crystal display panel, is widely used in the various products such as mobile phone, display, television set.TFT-LCD productions are most closed The technique of key is physical vapour deposition (PVD)(PVD), PVD is that semiconductor chip production and TFT-LCD are prepared and added with splash-proofing sputtering metal boots material One of most important raw material during work.
The technique of target as sputter deposition film is to produce the common method of function film, and sputtering method is to use high-energy ion bombardment Target material surface, make target material surface atom or molecular jet in substrate surface, form the process of one layer of dense film.Splash-proofing sputtering metal It is ultra-pure aluminum and the pure alloy of superelevation that dosage is maximum in target.Rafifinal target(The ultra-pure aluminum of 5N~6N), purity > 99.999%, product specification exists:12~20mmx180~1731mmx1700~2650mm, added value of product is high, but production difficulty Greatly, in addition to purity requirement, there are strict demand, crystallite dimension general crystallite dimension, the crystal grain uniformity and texture orientation etc. It is required that within 200um.
Rafifinal target preparation method mainly has at present:(1) equal channel angular hubbing(Equal Channel Angular Drawing abbreviation ECAD), (2) multiway forging method(Multiple Forging, abbreviation MF), (3) rolling, Preceding 2 kinds of processing methods can only process the target of small size, for large-size target, such as 1950x1580x14mm and 2650*210* The target of 18.3mm specifications can only use rolling to produce.
Invention content
In view of this, the object of the present invention is to provide a kind of preparation method of ultra-pure aluminum target, it is thin crystal grain can be prepared Small and uniform target, meets PVD requirements.
The present invention is realized using following scheme:A kind of preparation method of ultra-pure aluminum target, includes the following steps:(1)It will Ultra-pure aluminum ingot casting of the purity more than 99.999wt% carries out surface milling, removes the oxide layer on surface;(2)Ingot casting is heated to 230~400 DEG C;(3)Ingot casting after heating is carried out to the hot rolling of 10 ~ 20 passages, single pass rolling reduction control is in 20 ~ 60mm, control The finishing temperature of final pass processed is at 350 DEG C or less;(4)To complete hot rolling aluminium sheet into trip temperature be 200~300 DEG C, heat preservation Time is the annealing of 1~2h;(5)To carrying out Milling Process after plank leveling, average crystal grain is obtained in the super of 80~150um Rafifinal target.
Further, step(1)Middle milling amount is not less than 3mm.
Further, step(2)It is middle that ingot casting is heated using pushing type heating furnace;Step(3)It is middle to use reversible Hot-rolling mill carries out hot rolling to ingot casting.
Further, step(3)In in the hot rolling, control plank single track by controlling deflection and cooling lotion Secondary hot-rolled temperature variation is 3 ~ 8 DEG C.
Compared with prior art, the invention has the advantages that:The present invention can be used to prepare large-size target, prepare The target purity gone out is high, and crystal grain is tiny and uniform, and texture is orientated unanimously, meets the requirement of PVD;It is simple for process simultaneously, easily In operation, it is convenient for large-scale industrial production, effectively reduces energy consumption, reduce cost.
To make the objectives, technical solutions, and advantages of the present invention more comprehensible, specific embodiment and phase will be passed through below Attached drawing is closed, invention is further described in detail.
Description of the drawings
Fig. 1 is the polarisation tissue for the ultra-pure aluminum target that the present invention is prepared.
Specific implementation mode
A kind of preparation method of ultra-pure aluminum target, includes the following steps:(1)Purity is more than to the superelevation of 99.999wt% Fine aluminium ingot casting carries out surface milling, removes the oxide layer on surface;(2)Ingot casting is heated to 230~400 DEG C;(3)After heating Ingot casting carries out the hot rolling of 10 ~ 20 passages, and single pass rolling reduction is controlled in 20 ~ 60mm, controls the finishing temperature of final pass 350 DEG C or less;(4)To complete hot rolling aluminium sheet into trip temperature be 200~300 DEG C, soaking time be 1~2h annealing;(5) To carrying out Milling Process, ultra-pure aluminum target of the acquisition average crystal grain in 80~150um after plank leveling.
In the present embodiment, step(1)The ultra-pure aluminum ingot casting of middle 99.999wt% is the high purity aluminium casting ingot by 99.9wt% It is produced by three-layer-liquid electrolysis and segregation method.
In the present embodiment, step(1)Middle milling amount is not less than 3mm.
In the present embodiment, step(2)It is middle that ingot casting is heated using pushing type heating furnace;Step(3)Middle use can Inverse formula hot-rolling mill carries out hot rolling to ingot casting, and specific hot rolling pass is determined according to the thickness of aluminium sheet.
In the present embodiment, step(3)In in the hot rolling, control plank by controlling deflection and cooling lotion The variation of single pass hot-rolled temperature is 3 ~ 8 DEG C.
Above-listed preferred embodiment, has been further described the object, technical solutions and advantages of the present invention, is answered Understand, the foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all essences in the present invention With within principle, any modification, equivalent replacement, improvement and so on should all be included in the protection scope of the present invention god.

Claims (2)

1. a kind of preparation method of ultra-pure aluminum target, it is characterised in that:Include the following steps:(1)Purity is more than The ultra-pure aluminum ingot casting of 99.999wt% carries out surface milling, and milling amount is not less than 3mm, removes the oxide layer on surface;(2)It will casting Ingot is heated to 230~400 DEG C;(3)Ingot casting after heating carries out to the hot rolling of 10 ~ 20 passages, single pass rolling reduction control 20 ~ 60mm controls final pass by controlling deflection and cooling lotion to control the variation of plank single pass hot-rolled temperature be 3 ~ 8 DEG C Finishing temperature at 350 DEG C or less;(4)To complete hot rolling aluminium sheet into trip temperature be 200~300 DEG C, soaking time be 1~2h Annealing;(5)To carrying out Milling Process, ultra-pure aluminum target of the acquisition average crystal grain in 80~150um after plank leveling.
2. the preparation method of ultra-pure aluminum target according to claim 1, it is characterised in that:Step(2)Middle use promotes Formula heating furnace heats ingot casting;Step(3)It is middle that hot rolling is carried out to ingot casting using reversible hot rolling mill.
CN201610846416.4A 2016-09-26 2016-09-26 A kind of preparation method of ultra-pure aluminum target Active CN106282945B (en)

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CN106282945B true CN106282945B (en) 2018-10-16

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Families Citing this family (9)

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Publication number Priority date Publication date Assignee Title
CN106987788B (en) * 2017-03-07 2019-03-26 新疆众和股份有限公司 It is a kind of to provide the hot-working method of 1090 mirror surface woollens for specular aluminium rolling
CN106947926B (en) * 2017-04-21 2018-04-03 中铝瑞闽股份有限公司 A kind of preparation method of large scale rafifinal target
CN107030108A (en) * 2017-04-21 2017-08-11 中铝瑞闽股份有限公司 A kind of rafifinal target heavy reduction rolling method
US11618942B2 (en) 2017-06-22 2023-04-04 Uacj Corporation Sputtering-target material, sputtering target, sputtering-target aluminum plate, and method of manufacturing the same
CN109174996A (en) * 2018-08-24 2019-01-11 爱发科电子材料(苏州)有限公司 The plate calendering technology of TFT liquid crystal display panel wiring layer rafifinal target
CN110205590A (en) * 2019-05-08 2019-09-06 东莞市欧莱溅射靶材有限公司 A kind of ultra-pure aluminum sputtering target material and its milling method
CN110484874A (en) * 2019-08-16 2019-11-22 韶关市欧莱高新材料有限公司 A kind of preparation method of high-purity aluminum pipe sputtering target material
CN111318570B (en) * 2020-03-05 2021-11-19 爱发科电子材料(苏州)有限公司 Process for manufacturing micronized target material crystal grains
CN116732479A (en) * 2023-07-28 2023-09-12 宁波江丰电子材料股份有限公司 Manufacturing method of integrated high-purity aluminum target for LCD

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JP2001115257A (en) * 1999-10-15 2001-04-24 Honeywell Electronics Japan Kk Manufacturing method for sputtering target material
CN101638760A (en) * 2009-07-30 2010-02-03 上海交通大学 Preparation method of ultra-pure aluminum ultrafine grain sputtering target
CN102002653B (en) * 2010-11-27 2012-07-04 东北大学 Method for preparing superhigh-purity aluminum fine grain high-orientation target
JP5920117B2 (en) * 2012-08-30 2016-05-18 新日鐵住金株式会社 Manufacturing method of hot pressed material for sputtering target made of high purity aluminum
CN103834924A (en) * 2013-12-25 2014-06-04 利达光电股份有限公司 Method for preparing ultra-high purity aluminium and ultra-high purity aluminium alloy sputtering target material

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