CN106239306B - A kind of change R value Waffer edge chamfering methods - Google Patents
A kind of change R value Waffer edge chamfering methods Download PDFInfo
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- CN106239306B CN106239306B CN201610618414.XA CN201610618414A CN106239306B CN 106239306 B CN106239306 B CN 106239306B CN 201610618414 A CN201610618414 A CN 201610618414A CN 106239306 B CN106239306 B CN 106239306B
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- slot
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- chamfering
- edge
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- 238000000034 method Methods 0.000 title claims abstract description 19
- 238000000465 moulding Methods 0.000 claims abstract description 5
- 239000004065 semiconductor Substances 0.000 abstract description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052710 silicon Inorganic materials 0.000 abstract description 3
- 239000010703 silicon Substances 0.000 abstract description 3
- 238000003908 quality control method Methods 0.000 abstract description 2
- 238000012545 processing Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910001651 emery Inorganic materials 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 238000009966 trimming Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B9/00—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor
- B24B9/02—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground
- B24B9/06—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain
- B24B9/065—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain of thin, brittle parts, e.g. semiconductors, wafers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02021—Edge treatment, chamfering
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)
Abstract
The present invention relates to a kind of change R value Waffer edge chamfering methods, grinding wheel design is first carried out headed by step, designs a tool there are three types of the grinding wheel of R values for the thickness of semiconductor wafer, remaining slot can be designed as needed；Secondly grinding wheel is installed on fully-automatic chamfering machine；Carrying out edge again, just one-step forming is that the slot that actionradius is R1 carries out chamfering to chip；It is that the slot that actionradius is R2, half-angle angle is θ carries out chamfering to chip to carry out edge post forming again；It is that the slot that actionradius is R3, half-angle angle is θ carries out chamfering to chip finally to carry out edge final molding, and having the technical effect that effectively reduces silicon chip edge damage layer depth, realizes that chip near-surface region is slowly varying, is conducive to Waffer edge quality control.
Description
Technical field
The present invention relates to a kind of edge chamfer method of semi-conducting material, more particularly to a kind of change R value Waffer edge chamferings
Method.
Background technology
Edge chamfer technique is one of the standard technology of semi-conducting material crystal pro cessing process, is mainly used for realizing chip side
Edge is radiused, on the one hand, wafer edge damage can be greatly reduced, the fragment rate of process is greatly reduced；On the other hand, circular arc
After change, Waffer edge is no longer sharp, can promote the safety of process.Currently, the beveler of international mainstream is produced with Japan
Japanese beveler based on, the country also have part of the manufacturer produce beveler.There are one common traits for these bevelers tool, are gone by circle
Except amount（Or radial direction removal amount）Technique setting is carried out, in the wafer on heart face, the circle removal amount of whole circumference is identical；
But in wafer thickness direction, there are marked differences for circle removal amount, to cause the significant difference of wafer thickness direction edge damage.
Causing the basic reason of this phenomenon is：Circle removal amount is calculated with center wafer face, i.e., touches chip from grinding wheel
Start to calculate when median plane position.When grinding wheel touches center wafer face, since grinding wheel itself has certain radius, to
Leading to grinding wheel, two end faces upper and lower to chip have carried out chamfer machining, to make chip have certain face breadth degree.And
The above process is realized automatically by beveler, and implements the core elements that control this systems that process belongs to beveler producer, no
Externally provide.Beveler cannot carry out effective control using producer to the above process, to be difficult to realize the overall process control of chip
System.The technologists of each wafer manufacture producer increasingly focus on the technological parameter of chamfer process and the parameter of grinding wheel, and
It is less consider grinding wheel contacted with center wafer face before control measure.
Invention content
In view of the problems existing in the prior art, the present invention touches institute before the position of center wafer face based on grinding wheel is reduced
The face breadth degree of formation is realized by the control of three processes such as first one-step forming, post forming and final molding to chip side
The chamfering of edge makes Waffer edge pattern be gradient to final edge pattern, provides a kind of change R value Waffer edge chamfering methods, special
Sign is：Specific steps include,
Step 1. processed wafer edge chamfer is with radius value grinding wheel is become, in the change radius that grinding wheel periphery has array arranged side by side
It is worth slot, every group of change radius value slot is at least three, and becoming radius value groove radius is R1, R2, R3 ... Rn respectively and meets R1>R2>R3
>…>Rn, slot bottom shape are semicircle, and each slot center of circle is that the first slot is 0mm at a distance from grinding wheel periphery, remaining each slot is Rn-
1- Rn mm, two half angle θs of each slot and the tangent extended line of trough rim and grinding wheel periphery point of intersection rounding angle；
The grinding wheel processed and processed chip are installed on fully-automatic chamfering machine by step 2., make center wafer face with
The center of circle of grinding wheel slot is in same level；
Just one-step forming, the slot that actionradius is R1 carry out chamfering to chip at step 3. edge, and the chamfering number of turns is 1 circle, grinding wheel
3000~4000RPM of rotating speed makes the face breadth degree D1 of chip reach 0.20~0.25mm, circle removal amount 0.3mm；
The post forming of step 4. edge, the slot that actionradius R2, half angle θ are 20 ° carry out chamfering, chamfering circle to chip
Number is 1 circle, and 3000~4000RPM of grinding wheel speed makes the face breadth degree D2 of chip reach 0.30~0.40mm, circle removal amount=
0.3mm；
Step 5. radius is R3 ... Rn-1 repeats step 4；
Step 6. edge final molding, actionradius Rn, the slot that half-angle angle is 20 ° carry out chamfering, chamfering to chip
The number of turns：1 circle, 3000~4000RPM of grinding wheel speed make the face breadth degree Dn of chip reach 0.30~0.40mm, enclose removal amount
0.3mm。
The solution have the advantages that being effective reduction silicon chip edge damage layer depth, realize that chip near-surface region is slow
Slow variation, is conducive to Waffer edge quality control.
Description of the drawings
Fig. 1 is the grinding wheel diagrammatic cross-section of the present invention；
Fig. 2 is the center wafer face contact grinding wheel schematic diagram of the present invention；
Fig. 3 is the Waffer edge evolution process of the present invention.
Specific implementation mode
By taking thickness is 750 μm of 6 inches of silicon single crystal flakes as an example, the implementation process of this patent is explained.
Step 1. emery wheel making designs for the thickness of semiconductor wafer and makes the grinding wheel slot having there are three types of R values, the
The radius R1 of one slot determines by wafer thickness T, the first groove processing face breadth degree D1, relational expression：, remaining two slot
Radius Rn determined by wafer thickness T, remaining two groove processing face breadth degree Dn and slot half angle θ, relational expression：
, each slot center of circle is the first slot 0mm at a distance from grinding wheel periphery, remaining each slot is Rn-1- Rn mm, therefore, each slot bottom base
This shape is：First slot D1=205.847 μm, T=750 μm R1=444.5 μm, the center of circle are 0mm at a distance from grinding wheel periphery,
Apart from 2000 μm of upper surface, the second slot presses T=750 μm, D2=297.3346 μm, θ=20 °, R2=381 μm, the center of circle and grinding wheel circumference
The distance in face is 63.5 μm, and apart from 4000 μm of upper surface, third slot is by T=750 μm, D3=370.6315 μm, θ=20 °, R values
R3=342.9 μm, the center of circle is 101.6 μm at a distance from grinding wheel periphery, apart from 6000 μm of upper surface, two half angle θs of each slot and slot
The extended line and grinding wheel periphery point of intersection rounding angular radius of phase trimming are 100 μm.
Grinding wheel and processed chip are installed on fully-automatic chamfering machine by step 2., make center wafer face and grinding wheel slot
The center of circle is in same level.
Step 3. edge just one-step forming, actionradius be R1 slot to wafer chamfering, the face breadth degree of chip is about 205 μ
M, the chamfering number of turns：1 circle, grinding wheel speed 3000RPM enclose removal amount：0.3mm.
The post forming of step 4. edge, actionradius R2, the slot that half-angle angle is 20 ° are to wafer chamfering, the face of chip
Breadth degree is about 297 μm, the chamfering number of turns：1 circle, grinding wheel speed 3000RPM enclose removal amount：0.3mm.
Step 5. radius is R3 ... Rn-1 repeats step 4.
Step 6. edge final molding, actionradius R3, the slot that half-angle angle is 20 ° are to wafer chamfering, wafer face width
Width is about 370 μm, the chamfering number of turns：1 circle, grinding wheel speed 3000RPM enclose removal amount：0.3mm.
Claims (1)
1. a kind of change R value Waffer edge chamfering methods, it is characterised in that：Specific steps include,
Step 1. processed wafer edge chamfer is with radius value grinding wheel is become, in the change radius value slot that grinding wheel periphery has array arranged side by side,
Every group of change radius value slot is at least three, and becoming radius value groove radius is R1, R2, R3 ... Rn respectively and meets R1>R2>R3>…>
Rn, slot bottom shape are semicircle, and each slot center of circle is that the first slot is 0mm at a distance from grinding wheel periphery, remaining each slot is Rn-1-
Rn mm, two half angle θs of each slot and the tangent extended line of trough rim and grinding wheel periphery point of intersection rounding angle；
The grinding wheel processed and processed chip are installed on fully-automatic chamfering machine by step 2., make center wafer face and grinding wheel
The center of circle of slot is in same level；
Just one-step forming, the slot that actionradius is R1 carry out chamfering to chip at step 3. edge, and the chamfering number of turns is 1 circle, grinding wheel speed
3000~4000RPM makes the face breadth degree D1 of chip reach 0.20~0.25mm, circle removal amount 0.3mm；
The post forming of step 4. edge, the slot that actionradius R2, half angle θ are 20 ° carry out chamfering to chip, and the chamfering number of turns is 1
Circle, 3000~4000RPM of grinding wheel speed make the face breadth degree D2 of chip reach 0.30~0.40mm, enclose removal amount=0.3mm；
Step 5. radius is R3 ... Rn-1 repeats step 4；
Step 6. edge final molding, actionradius Rn, the slot that half-angle angle is 20 ° carry out chamfering, the chamfering number of turns to chip：
1 circle, 3000~4000RPM of grinding wheel speed make the face breadth degree Dn of chip reach 0.30~0.40mm, circle removal amount 0.3mm.
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| CN106239306B true CN106239306B (en) | 2018-07-31 |
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Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110281101B (en) * | 2019-07-23 | 2021-10-29 | 西安奕斯伟材料科技有限公司 | Edge grinding device and method |
| CN114406841B (en) * | 2022-03-29 | 2022-07-26 | 江苏巨弘捆带制造有限公司 | A grinding device for steel band production |
| CN114734333A (en) * | 2022-05-05 | 2022-07-12 | 北京天科合达半导体股份有限公司 | Chamfering method |
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| JPS6362679A (en) * | 1986-09-03 | 1988-03-18 | Hitachi Ltd | Scribing diamond grinding wheel |
| DE102006048218A1 (en) * | 2006-10-11 | 2008-04-17 | Siltronic Ag | Grinding wheel specification method for edge rounding of semiconductor wafer, involves specifying wheel by profile width and bar length of its rib profile, profile width-tolerance range, bar length tolerance range, and profile width index |
| CN102811839A (en) * | 2010-08-06 | 2012-12-05 | 圣戈班磨料磨具有限公司 | Abrasive tool and a method for finishing complex shapes in workpieces |
| CN103180098A (en) * | 2010-07-30 | 2013-06-26 | Memc电子材料有限公司 | Grinding tool for trapezoid grinding of a wafer |
| CN103394982A (en) * | 2013-08-20 | 2013-11-20 | 中国电子科技集团公司第四十六研究所 | Chamfering grinding wheel for machining silicon single crystal wafer for thick-layer epitaxy, and chamfering method |
| CN203726355U (en) * | 2014-03-26 | 2014-07-23 | 山东天岳晶体材料有限公司 | Grinding wheel for chamfering edge of large-diameter silicon carbide wafer |
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2016
- 2016-08-01 CN CN201610618414.XA patent/CN106239306B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
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| JPS6362679A (en) * | 1986-09-03 | 1988-03-18 | Hitachi Ltd | Scribing diamond grinding wheel |
| DE102006048218A1 (en) * | 2006-10-11 | 2008-04-17 | Siltronic Ag | Grinding wheel specification method for edge rounding of semiconductor wafer, involves specifying wheel by profile width and bar length of its rib profile, profile width-tolerance range, bar length tolerance range, and profile width index |
| CN103180098A (en) * | 2010-07-30 | 2013-06-26 | Memc电子材料有限公司 | Grinding tool for trapezoid grinding of a wafer |
| CN102811839A (en) * | 2010-08-06 | 2012-12-05 | 圣戈班磨料磨具有限公司 | Abrasive tool and a method for finishing complex shapes in workpieces |
| CN103394982A (en) * | 2013-08-20 | 2013-11-20 | 中国电子科技集团公司第四十六研究所 | Chamfering grinding wheel for machining silicon single crystal wafer for thick-layer epitaxy, and chamfering method |
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Application publication date: 20161221 Assignee: CLP Jinghua (Tianjin) semiconductor materials Co.,Ltd. Assignor: CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION NO.46 Research Institute Contract record no.: X2024980003546 Denomination of invention: A method for chamfering the edges of variable R-value chips Granted publication date: 20180731 License type: Common License Record date: 20240327 |
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