JPS6362679A - Scribing diamond grinding wheel - Google Patents
Scribing diamond grinding wheelInfo
- Publication number
- JPS6362679A JPS6362679A JP61205987A JP20598786A JPS6362679A JP S6362679 A JPS6362679 A JP S6362679A JP 61205987 A JP61205987 A JP 61205987A JP 20598786 A JP20598786 A JP 20598786A JP S6362679 A JPS6362679 A JP S6362679A
- Authority
- JP
- Japan
- Prior art keywords
- scribing
- rough polishing
- fine
- polishing
- grinding wheel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910003460 diamond Inorganic materials 0.000 title claims description 7
- 239000010432 diamond Substances 0.000 title claims description 7
- 238000005498 polishing Methods 0.000 abstract description 23
- 239000000463 material Substances 0.000 abstract description 6
- 238000003754 machining Methods 0.000 abstract description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 4
- 238000005520 cutting process Methods 0.000 description 2
- 239000003082 abrasive agent Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000008014 freezing Effects 0.000 description 1
- 238000007710 freezing Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B27—WORKING OR PRESERVING WOOD OR SIMILAR MATERIAL; NAILING OR STAPLING MACHINES IN GENERAL
- B27B—SAWS FOR WOOD OR SIMILAR MATERIAL; COMPONENTS OR ACCESSORIES THEREFOR
- B27B33/00—Sawing tools for saw mills, sawing machines, or sawing devices
- B27B33/20—Edge trimming saw blades or tools combined with means to disintegrate waste
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、ウェハのスクライブ加工に係り、割れ、欠は
不良の低減、面取り加工に好適なスクライブ用ダイヤモ
ンド砥石に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to wafer scribing, and relates to a diamond grindstone for scribing that is suitable for reducing defects such as cracks and chips, and for chamfering.
従来のスクライブ用砥石では、スクライブ時の割れ、欠
は不良を完全に押え切れない、また切断面の面取り加工
が出来なかった。Conventional scribing whetstones cannot completely suppress cracks and chips during scribing, and cannot chamfer the cut surfaces.
したがって、本発明の目的は、ＬＳＩ製造工程における
スクライブ工程における歩留の向」二とチップの面取り
加工による製品の品質の向１−に資することの出来るス
クライブ用ダイヤモンド砥石を提供することである。Therefore, an object of the present invention is to provide a diamond grindstone for scribing which can contribute to improving the yield in the scribing step in the LSI manufacturing process and improving the quality of the product by chamfering the chip.
本発明においては、スクライブ用ダイヤモンド砥石を、
粗研磨材を精研磨材ではさみ込んだサンドイッチ構造と
した点に特徴がある。In the present invention, the diamond grindstone for scribing is
It is unique in that it has a sandwich structure in which a coarse abrasive is sandwiched between fine abrasives.
従来の、スクライブ用ダイヤモンド砥石は単一の素材を
用い、かつ加工面の形状もフラットであるため、＋１ｔ
−の砥石では、同時に粗研磨、精研磨、面取り加工が出
来ない。これに対し、本発明によれば、サンドイッチ構
造とした複数の素材を用い、加工面の形状を工夫するこ
とにより、同時に粗研磨と精研磨と面取り加工か可能と
なる。Conventional diamond whetstones for scribing use a single material and the shape of the processed surface is flat, so it is +1t
With a - grindstone, rough polishing, fine polishing, and chamfering cannot be performed at the same time. In contrast, according to the present invention, by using a plurality of materials having a sandwich structure and devising the shape of the processed surface, rough polishing, fine polishing, and chamfering can be performed simultaneously.
以下、本発明の実施例を第４図、第２図により説明する
。Embodiments of the present invention will be described below with reference to FIGS. 4 and 2.
第１図に本発明によるスクライブ用ダイシング砥石の加
工方向から見た断面図を示す。第２図に示す従来の砥石
との基本的な構造の違いは、本発明においては粗研磨材
層１を精研磨材層２ではさみこんだサンドイッチ構造と
した点にある。従来の砥石は単一素材ご３で構成されて
いる。FIG. 1 shows a cross-sectional view of the dicing grindstone for scribing according to the present invention as viewed from the processing direction. The basic difference in structure from the conventional grindstone shown in FIG. 2 is that the present invention has a sandwich structure in which a coarse abrasive layer 1 is sandwiched between fine abrasive layers 2. Conventional whetstones are made of a single material.
さらに、精研磨部２の加工面は精研磨部２と粗研磨部１
の境界面に対してＯ（≦９０°）の角度を持っていると
ころに砥石加工面の形状的な特徴がある。Furthermore, the processed surfaces of the fine polishing section 2 are the fine polishing section 2 and the rough polishing section 1.
A characteristic feature of the shape of the grindstone surface is that it has an angle of O (≦90°) with respect to the boundary surface.
ウェハスクライブ加工時には、第３図に示すように、先
ず、粗研磨部１がウェハ４にあたり、従来通りのスクラ
イブ溝加工５が行われる。尚、第３図中の矢印７は砥石
の切り込み方向を示す。加工が進むと精研磨部２が加工
面にあたり、切断面の仕」−げ、面取り６が行われる。At the time of wafer scribing, as shown in FIG. 3, first, the rough polishing section 1 hits the wafer 4, and conventional scribing groove processing 5 is performed. Note that the arrow 7 in FIG. 3 indicates the cutting direction of the grindstone. As the machining progresses, the fine polishing section 2 comes into contact with the machined surface, and the cut surface is finished and chamfered 6.
かくして、加工終了時には、第３図に示すようなウェハ
加工断面が得られる。Thus, at the end of processing, a processed wafer cross section as shown in FIG. 3 is obtained.
上記のようなフローにて加工が進むため、粗研磨部１の
加工面の幅をスクライブ領域の幅に比して細くとれば、
粗研磨時の割れ、欠けのチップ内部への波及を抑えるこ
とが出来る。更に、精研磨部２により仕上げが行われ、
同時に而取り６がなされる。Since the processing proceeds according to the flow described above, if the width of the processed surface of the rough polishing section 1 is made narrower than the width of the scribe area,
It is possible to suppress the spread of cracks and chips inside the chip during rough polishing. Furthermore, finishing is performed by the fine polishing section 2,
At the same time, 6 is taken.
本発明によれば、スクライブ加工において、＋１′４−
のスクライブ用砥石にネ１ｑ研磨部と粗研磨部を持つた
め、従来通りのスクライブ工程、同一工数にて割れ、欠
は不良の低減ができるため、Ｌ Ｓ 丁等の製造歩留の
向−１−という効果がある。また、精研磨加工面が傾斜
しているという形状により面取り加工が同時に行えるた
め、チップ切断部へのノ１ｂ；力凍中を緩和できるとい
う効果があり、品質の向上にもつなかる。According to the present invention, +1'4-
Since the scribing whetstone has a 1q polishing part and a rough polishing part, it is possible to reduce the number of cracks and chips in the conventional scribing process with the same number of man-hours. -There is an effect. Furthermore, since the finely polished surface is inclined, chamfering can be performed at the same time, which has the effect of reducing the stress on the chip cutting portion during freezing, which also leads to improved quality.
第］−図は本発明砥石の加工方向から見た部分断面図、
第２図は従来の砥石の加工方向から見た部分断面図、第
３３図は本発明の砥石によりスクライブ加工されたウェ
ハの断面図である。
］・・・粗研磨部、２・・・精研磨部。] - Figure is a partial sectional view of the grindstone of the present invention viewed from the processing direction.
FIG. 2 is a partial sectional view of a conventional grindstone viewed from the processing direction, and FIG. 33 is a sectional view of a wafer scribed by the grindstone of the present invention. ]...Rough polishing part, 2...Fine polishing part.
Claims (1)
するように精研磨材層を設けたことを特徴とするスクラ
イブ用ダイヤモンド砥石。 ２、上記精研磨材層にテーパを設けたことを特徴とする
特許請求の範囲第１項記載のスクライブ用ダイヤモンド
砥石。[Claims] 1. A diamond grindstone for scribing, characterized in that a fine abrasive layer is provided on both left and right sides of the coarse abrasive layer so that a portion of the coarse abrasive layer protrudes. 2. The diamond grindstone for scribing according to claim 1, wherein the fine abrasive layer is tapered.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61205987A JPS6362679A (en) | 1986-09-03 | 1986-09-03 | Scribing diamond grinding wheel |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61205987A JPS6362679A (en) | 1986-09-03 | 1986-09-03 | Scribing diamond grinding wheel |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6362679A true JPS6362679A (en) | 1988-03-18 |
Family
ID=16516021
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61205987A Pending JPS6362679A (en) | 1986-09-03 | 1986-09-03 | Scribing diamond grinding wheel |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6362679A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100303535B1 (en) * | 1994-01-24 | 2002-08-21 | 삼성에스디아이 주식회사 | Scribing device for lcd |
| US6455920B2 (en) | 1998-02-27 | 2002-09-24 | Fujitsu Limited | Semiconductor device having a ball grid array and a fabrication process thereof |
| CN106239306A (en) * | 2016-08-01 | 2016-12-21 | 中国电子科技集团公司第四十六研究所 | A kind of change R value Waffer edge chamfering method |
-
1986
- 1986-09-03 JP JP61205987A patent/JPS6362679A/en active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100303535B1 (en) * | 1994-01-24 | 2002-08-21 | 삼성에스디아이 주식회사 | Scribing device for lcd |
| US6455920B2 (en) | 1998-02-27 | 2002-09-24 | Fujitsu Limited | Semiconductor device having a ball grid array and a fabrication process thereof |
| US6657282B2 (en) | 1998-02-27 | 2003-12-02 | Fujitsu Limited | Semiconductor device having a ball grid array and a fabrication process thereof |
| US6784542B2 (en) | 1998-02-27 | 2004-08-31 | Fujitsu Limited | Semiconductor device having a ball grid array and a fabrication process thereof |
| US6987054B2 (en) | 1998-02-27 | 2006-01-17 | Fujitsu Limited | Method of fabricating a semiconductor device having a groove formed in a resin layer |
| US7064047B2 (en) | 1998-02-27 | 2006-06-20 | Fujitsu Limited | Semiconductor device having a ball grid array and a fabrication process thereof |
| US7556985B2 (en) | 1998-02-27 | 2009-07-07 | Fujitsu Microelectronics Limited | Method of fabricating semiconductor device |
| CN106239306A (en) * | 2016-08-01 | 2016-12-21 | 中国电子科技集团公司第四十六研究所 | A kind of change R value Waffer edge chamfering method |
| CN106239306B (en) * | 2016-08-01 | 2018-07-31 | 中国电子科技集团公司第四十六研究所 | A kind of change R value Waffer edge chamfering methods |
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