CN106229324A - Imageing sensor and preparation method thereof - Google Patents
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- CN106229324A CN106229324A CN201610826344.7A CN201610826344A CN106229324A CN 106229324 A CN106229324 A CN 106229324A CN 201610826344 A CN201610826344 A CN 201610826344A CN 106229324 A CN106229324 A CN 106229324A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 38
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 63
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 63
- 239000010703 silicon Substances 0.000 claims abstract description 63
- 239000004065 semiconductor Substances 0.000 claims abstract description 52
- 239000000758 substrate Substances 0.000 claims abstract description 41
- 238000000034 method Methods 0.000 claims abstract description 26
- 238000002955 isolation Methods 0.000 claims abstract description 13
- 229910052732 germanium Inorganic materials 0.000 claims abstract description 9
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims abstract description 9
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical group [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 9
- 238000000407 epitaxy Methods 0.000 claims description 5
- 238000005137 deposition process Methods 0.000 claims description 3
- 230000003647 oxidation Effects 0.000 claims 1
- 238000007254 oxidation reaction Methods 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 abstract description 8
- 239000013078 crystal Substances 0.000 abstract description 7
- 238000005516 engineering process Methods 0.000 description 5
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 238000007493 shaping process Methods 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000739 chaotic effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14632—Wafer-level processed structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14687—Wafer level processing
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
Present invention is disclosed a kind of imageing sensor and preparation method thereof, including: provide a silicon substrate, described silicon substrate to include photodiode area and area of isolation；Silicon substrate described in selectivity part, forms groove in described photodiode area；Filling semiconductor layer in described groove, the energy gap of described semiconductor layer is less than the energy gap of described silicon substrate, and described semiconductor layer is used for forming photodiode.Wherein, forming semiconductor layer in described photodiode area, the energy gap of described semiconductor layer is less than the energy gap of silicon, it is possible to preferably absorbs near infrared light, can be effectively improved cmos image sensor conversion quantum efficiency.Further, germanium and silicon epitaxial technique can to make technique the most compatible with present silicon single crystal, thus is easier to apply in current cmos image sensor technique.
Description
Technical field
The present invention relates to image sensor technologies field, particularly relate to a kind of imageing sensor and preparation method thereof.
Background technology
Developing rapidly along with mobile Internet, people are the hugest to the demand of intelligent terminal, and have intelligence
The imageing sensor of the title of terminal " eyes " has also welcome unprecedented development space.Traditional CCD (Charge-coupled
Device, charge coupled cell) imageing sensor due to its power consumption relatively big, market is confined in high performance digital camera；
Cmos image sensor (CMOS Image Sensor is called for short CIS) is the most low in energy consumption, and speed is fast, and is prone to and existing half
Semiconductor process is mutually compatible, and production cost is relatively low, and this makes cmos image sensor occupy the half river in imageing sensor market
Mountain.
The subject matter that cmos image sensor runs into is quantum efficiency (QE, the quantum of near infrared light
Efficiency) relatively low.Quantum efficiency refers to that a photon is transformed into the probability of light induced electron in PD.In order to improve infrared light
Quantum efficiency, prior art often increases the integral thickness of silicon substrate, but, adopt obtain in this way CMOS figure
As the performance of sensor is the best.
Summary of the invention
It is an object of the invention to, it is provided that a kind of imageing sensor and preparation method thereof, the amount of near infrared light can be improved
Sub-efficiency, improves the performance of cmos image sensor simultaneously.
For solving above-mentioned technical problem, the present invention provides the preparation method of a kind of imageing sensor, including:
A silicon substrate, described silicon substrate is provided to include photodiode area and area of isolation；
Silicon substrate described in selectivity part, forms groove in described photodiode area；And
Filling semiconductor layer in described groove, the energy gap of described semiconductor layer is less than the forbidden band width of described silicon substrate
Degree, described semiconductor layer is used for forming photodiode.
Further, in the preparation method of described imageing sensor, epitaxy technique is used to fill institute in described groove
State semiconductor layer.
Further, in the preparation method of described imageing sensor, use extension vapour deposition process in described groove
The monocrystal silicon of growth doped germanium.
Further, in the preparation method of described imageing sensor, described semiconductor layer is germanium-silicon layer, and described SiGe
In Ceng, the mass percent of germanium is 40%～60%.
Further, in the preparation method of described imageing sensor, in described groove before filling semiconductor layer, institute
The preparation method stating imageing sensor also includes:
A sacrifice layer is formed on the surface of described groove；
Remove described sacrifice layer.
Further, in the preparation method of described imageing sensor, the material of described sacrifice layer is oxide, described sacrificial
The thickness of domestic animal layer is
Further, in the preparation method of described imageing sensor, the preparation method of described imageing sensor also includes:
Described semiconductor layer is carried out ion doping and forms photodiode.
Further, in the preparation method of described imageing sensor, the degree of depth of described groove is 1 μm～5 μm.
According to the another side of the present invention, also provide for a kind of utilizing the figure that as above prepared by any one imageing sensor preparation method
As sensor, including silicon substrate, described silicon substrate includes photodiode area and for isolating described photodiode area
Area of isolation, there is in described photodiode area groove, in described groove, be filled with semiconductor layer, described semiconductor layer
Energy gap is less than the energy gap of described silicon substrate, and described semiconductor layer is used for being formed photodiode, described area of isolation
Material be silicon.
Further, in described imageing sensor, described semiconductor layer includes first kind doped layer and is positioned at institute
State the Second Type doped layer on first kind doped layer, described first kind doped layer and Second Type doped layer and form photoelectricity
Diode.
Compared with prior art, imageing sensor that the present invention provides and preparation method thereof has the advantage that
In described imageing sensor and preparation method thereof, in described photodiode area, form semiconductor layer, institute
State the energy gap energy gap less than silicon of semiconductor layer, it is possible to preferably absorb near infrared light, CMOS can be effectively improved
Imageing sensor conversion quantum efficiency.Further, germanium and silicon epitaxial technique can be made technique with present silicon single crystal and well holds concurrently
Hold, thus be easier to apply in current cmos image sensor technique.
Accompanying drawing explanation
Fig. 1 is the flow chart of the preparation method of imageing sensor in one embodiment of the invention；
Fig. 2 to Fig. 9 be the imageing sensor of one embodiment of the invention preparation method in the schematic diagram of device architecture.
Detailed description of the invention
Existing imageing sensor improves the quantum efficiency of near infrared light by increasing the integral thickness of silicon substrate, so
And, the performance adopting the cmos image sensor obtained in this way is the best.The research of existing imageing sensor is sent out by inventor
Existing, existing imageing sensor improves the quantum efficiency of near infrared light by increasing the integral thickness of silicon substrate, from present
2um～3um increase to 5um～10um.The simple monocrystal silicon thickness that increases can improve conversion quantum efficiency, but thereupon
Process challenge the most constantly aggravate, ratio is if desired for deeper ion implanting, and deeper ion implanting may require that thicker light
Photoresist, and the photoresist of thickness can reduce the resolution of minimum dimension, eventually affects the performance of cmos image sensor.In addition
Thick monocrystal silicon can bring again the technological problems of lithography alignment, needs to increase extra technique to realize Alignment Process.
Inventor further study show that, due to the inherent character of band structure, near infrared light is existed by silicon single crystal material
The problems such as absorptance is low, absorption length length.Submicron, deep-submicron model is entered especially with feature sizes of semiconductor devices
Enclosing, running voltage is more and more less, and transistor P-N junction is more and more shallow, depletion region from surface increasingly close to, thickness more and more thinner, very
Difficulty effectively absorbs incident optical signal, and the photo-generated carrier produced in substrate depths is due to can not be quickly by electrical field draw
Compound, photoelectric current is not contributed, causes the cmos image sensor quantum conversion made the lowest.
Inventor furthers investigate discovery, and the energy gap of germanium silicon material is less than the energy gap of silicon, if by germanium silicon material
Apply in cmos image sensor product, it is possible to preferably absorb near infrared light, cmos image sensor can be effectively improved
Conversion quantum efficiency.
According to the studies above, the present invention provides the preparation method of a kind of imageing sensor, it is provided that a kind of imageing sensor
Preparation method, as it is shown in figure 1, comprise the steps:
Step S11 a, it is provided that silicon substrate, described silicon substrate includes photodiode area and area of isolation；
Step S12, silicon substrate described in selectivity part, in described photodiode area, form groove；And
Step S13, filling semiconductor layer in described groove, the energy gap of described semiconductor layer is less than described silicon substrate
Energy gap, described semiconductor layer is used for forming photodiode.
Forming semiconductor layer in described photodiode area, the energy gap of described semiconductor layer is less than the forbidden band of silicon
Width, it is possible to preferably absorb near infrared light, can be effectively improved cmos image sensor conversion quantum efficiency.Simultaneously because germanium
Silicon epitaxy process can to make technique the most compatible with present silicon single crystal, thus is easier to apply the cmos image current
In sensor process.
Below in conjunction with schematic diagram, imageing sensor of the present invention and preparation method thereof is described in more detail, wherein
Illustrate the preferred embodiments of the present invention, it should be appreciated that those skilled in the art can revise invention described herein, and still
So realize the advantageous effects of the present invention.Therefore, it is widely known that description below is appreciated that for those skilled in the art,
And it is not intended as limitation of the present invention.
In order to clear, whole features of practical embodiments are not described.In the following description, it is not described in detail known function
And structure, because they can make to due to the fact that unnecessary details and chaotic.Will be understood that opening in any practical embodiments
In Faing, it is necessary to make a large amount of implementation detail to realize the specific objective of developer, such as according to relevant system or relevant business
Limit, an embodiment change into another embodiment.Additionally, it should think that this development is probably complexity and consuming
Time, but it is only routine work to those skilled in the art.
Referring to the drawings the present invention the most more particularly described below in the following passage.Want according to following explanation and right
Book, advantages and features of the invention is asked to will be apparent from.It should be noted that, accompanying drawing all uses the form simplified very much and all uses non-
Ratio accurately, only in order to facilitate, to aid in illustrating lucidly the purpose of the embodiment of the present invention.
Below in conjunction with Fig. 2 to Fig. 9, illustrating the preparation method of the imageing sensor of the present invention, Fig. 2 to Fig. 9 is this
The schematic diagram of device architecture in the preparation method of the imageing sensor of a bright embodiment.
First, carrying out step S11, as shown in Figures 2 and 3, wherein Fig. 2 is top view, and Fig. 3 is the Fig. 2 section along AA ' line
Figure.Thering is provided a silicon substrate 100, described silicon substrate 100 can be the silicon substrate 100 adulterated, and the most described silicon substrate 100 has P
Type dopant ion.
Described silicon substrate 100 includes photodiode area 101 and area of isolation 102, wherein, described area of isolation
102 for isolating adjacent photodiode area 101, and described photodiode area 101 is used for forming photodiode.Institute
State and silicon substrate 100 can also be formed other region, such as, in described area of isolation 102, area of grid 103 can also be included,
Being used for forming grid on the silicon substrate 100 of described area of grid 103, this is it will be appreciated by those skilled in the art that, at this
Do not repeat.
In fig. 2, illustrate one group of 4 described photodiode area 101, be for respectively forming R sub-pixel, G
Pixel, B sub-pixel and NIR sub-pixel, this is it will be appreciated by those skilled in the art that, and therefore not to repeat here.
General, in stacking-type imageing sensor preparation technology, need two wafer, a piece of is that logical operation circuit is brilliant
Circle, another sheet is image element circuit wafer, then two wafer is bonded together.Described silicon substrate in the present embodiment
100 are used for preparing image element circuit wafer.
Then, carry out step S12, silicon substrate 100 described in selectivity part, shape in described photodiode area 101
Become groove.Concrete, as shown in Figure 4, first use patterned photoresist 110 to define described photodiode area 101, i.e.
Patterned photoresist 110 exposes described photodiode area 101, and covers described area of isolation 102；Then, such as Fig. 5
Shown in, described silicon substrate 100 is performed etching, forms groove 110.It is also preferred that the left use dry etch process to form described groove
110, the most described groove of pattern 110 can be formed.It is also preferred that the left the depth H 1 of described groove 110 is 1 μm～5 μm, such as 2 μ
M, 3 μm, 4 μm, be conducive to improving the quantum efficiency of described imageing sensor.
In order to improve the pattern of described groove 110 so that the semiconductor layer being subsequently formed has preferable crystal formation, preferably
, in described groove 110 before filling semiconductor layer, the preparation method of described imageing sensor also includes:
As shown in Figure 6, form a sacrifice layer 200 on the surface of described groove 110, it is also preferred that the left the material of described sacrifice layer 200
Material is for oxide, and oxide has the good surface shaping effect, the thickness of described sacrifice layer 200 to beSuch asTo reach preferable shaping effect.Preferably, use furnace process growth described
Sacrifice layer 200, described sacrifice layer 200 is also formed into the upper surface of described silicon substrate 100；
As it is shown in fig. 7, remove described sacrifice layer 200, general, use wet-etching technology with by described sacrifice layer 200
Remove completely.
Then, step S13, as shown in Figure 8, filling semiconductor layer 300 in described groove 110, described quasiconductor are carried out
The energy gap of layer 300 is less than the energy gap of described silicon substrate 100, the energy gap of the material of the most described semiconductor layer 300
Less than the energy gap of monocrystal silicon, described semiconductor layer 300 can preferably absorb near infrared light, can be effectively improved CMOS figure
As sensor quantum conversion efficiency.
It is also preferred that the left described semiconductor layer 300 is germanium-silicon layer, the material of the most described semiconductor layer 300 is SiGe, the taboo of SiGe
Bandwidth is less than the energy gap of monocrystal silicon.In described germanium-silicon layer, the mass percent of germanium is 40%～60%, such as
50%.Preferably, use epitaxy technique to fill described semiconductor layer 300 in described groove 110, in the present embodiment, use
Extension vapour deposition process grows the monocrystal silicon of doped germanium in described groove 110, to form described semiconductor layer 300.Due to germanium
Silicon epitaxy process can to make technique the most compatible with present silicon single crystal, thus is easier to apply the cmos image current
In sensor process.
After described semiconductor layer 300 is formed, subsequent technique can be carried out, such as, described semiconductor layer 300 is carried out ion
Doping forms photodiode, general, can carry out twice ion implanting respectively, be injected separately into N in described semiconductor layer 300
Type ion and p-type ion, to form photodiode.Such as, as it is shown in figure 9, first carry out ion (for example, N of the first kind
Type ion) to form first kind doped layer 301, carry out the ion (for example, p-type ion) of Second Type the most again to be formed
Second Type doped layer 302, described first kind doped layer 301 and Second Type doped layer 302 form photodiode.
Through above-mentioned steps, defining imageing sensor 1 as shown in Figure 9, described imageing sensor 1 includes silicon substrate
100, described silicon substrate 100 includes photodiode area 101 and for isolating the isolation area of described photodiode area 101
Territory 102, has groove 110 in described photodiode area 101, be filled with semiconductor layer 300 in described groove 110, and described half
The energy gap of conductor layer 300 is less than the energy gap of described silicon substrate 100, and the material of described area of isolation 102 is silicon.
Preferably, the degree of depth of described groove 110 is 1 μm～5 μm, and described semiconductor layer 300 is epitaxial silicon germanium layer.In this reality
Executing in example, described semiconductor layer 300 includes first kind doped layer 301 and is positioned on described first kind doped layer 301
Second Type doped layer 302, described first kind doped layer 301 and Second Type doped layer 302 form photodiode 300.
In described imageing sensor 1, in described photodiode area 101, form semiconductor layer 300, described quasiconductor
The energy gap of layer 300 is less than the energy gap of silicon, it is possible to preferably absorb near infrared light, can be effectively improved cmos image and pass
Sensor 1 conversion quantum efficiency.Further, technique can be made with present silicon single crystal due to germanium and silicon epitaxial technique well to hold concurrently
Hold, thus be easier to apply in current cmos image sensor technique.
Obviously, those skilled in the art can carry out various change and the modification essence without deviating from the present invention to the present invention
God and scope.So, if these amendments of the present invention and modification belong to the scope of the claims in the present invention and equivalent technologies thereof
Within, then the present invention is also intended to comprise these change and modification.
Claims (10)
1. the preparation method of an imageing sensor, it is characterised in that including:
A silicon substrate, described silicon substrate is provided to include photodiode area and area of isolation；
Remove the described silicon substrate of part, in described photodiode area, form groove；And
Filling semiconductor layer in described groove, the energy gap of described semiconductor layer is less than the energy gap of described silicon substrate,
Described semiconductor layer is used for forming photodiode.
2. the preparation method of imageing sensor as claimed in claim 1, it is characterised in that use epitaxy technique at described groove
The described semiconductor layer of interior filling.
3. the preparation method of imageing sensor as claimed in claim 2, it is characterised in that use extension vapour deposition process in institute
The monocrystal silicon of doped germanium is grown in stating groove.
4. the preparation method of imageing sensor as claimed in claim 1, it is characterised in that described semiconductor layer is germanium-silicon layer,
And the mass percent of germanium is 40%～60% in described germanium-silicon layer.
5. the preparation method of the imageing sensor as described in any one of claim 1-4, it is characterised in that fill out in described groove
Before filling semiconductor layer, the preparation method of described imageing sensor also includes:
A sacrifice layer is formed on the surface of described groove；
Remove described sacrifice layer.
6. the preparation method of imageing sensor as claimed in claim 5, it is characterised in that the material of described sacrifice layer is oxidation
Thing, the thickness of described sacrifice layer is
7. the preparation method of imageing sensor as claimed in claim 1, it is characterised in that the preparation side of described imageing sensor
Method also includes: described semiconductor layer carries out ion doping and forms photodiode.
8. the preparation method of imageing sensor as claimed in claim 1, it is characterised in that the degree of depth of described groove is 1 μm～5
μm。
9. one kind utilizes imageing sensor prepared by claim 1-8 any one imageing sensor preparation method, it is characterised in that
Including silicon substrate, described silicon substrate includes photodiode area and for isolating the isolation area of described photodiode area
Territory, has groove in described photodiode area, be filled with semiconductor layer, the energy gap of described semiconductor layer in described groove
Less than the energy gap of described silicon substrate, described semiconductor layer is used for forming photodiode.
10. imageing sensor as claimed in claim 9, it is characterised in that described semiconductor layer includes first kind doped layer
And it is positioned at the Second Type doped layer on described first kind doped layer, described first kind doped layer and Second Type doping
Layer forms photodiode.
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Cited By (11)
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| CN108231816A (en) * | 2018-02-14 | 2018-06-29 | 德淮半导体有限公司 | Imaging sensor and the method for forming imaging sensor |
| CN108258004A (en) * | 2018-01-30 | 2018-07-06 | 德淮半导体有限公司 | Imaging sensor and forming method thereof |
| CN109087926A (en) * | 2018-08-10 | 2018-12-25 | 德淮半导体有限公司 | Imaging sensor, electronic device and its manufacturing method |
| CN111684597A (en) * | 2017-11-24 | 2020-09-18 | ams有限公司 | Near infrared photodetector semiconductor device |
| WO2021102836A1 (en) * | 2019-11-28 | 2021-06-03 | 深圳市大疆创新科技有限公司 | Photosensitive device and manufacturing method and apparatus therefor, silicon substrate and manufacturing method and apparatus therefor |
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| CN115939159A (en) * | 2023-02-02 | 2023-04-07 | 合肥晶合集成电路股份有限公司 | Image sensor and manufacturing method thereof |
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