CN108231816A - Imaging sensor and the method for forming imaging sensor - Google Patents
Imaging sensor and the method for forming imaging sensor Download PDFInfo
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14645—Colour imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
Abstract
This disclosure relates to a kind of imaging sensor, including：First photodiode, for converting the light of first band, the first part of first photodiode is formed by the first semi-conducting material, and the second part of first photodiode is formed by the second semi-conducting material；And second photodiode, for converting the light of second band, second photodiode is formed by the second semi-conducting material, wherein, at least part wavelength of the first band is more than the wavelength of the second band, and the band gap of first semi-conducting material is less than the band gap of second semi-conducting material.The disclosure further relates to a kind of method for forming imaging sensor.The disclosure can improve quantum efficiency and reduce the crosstalk of light.
Description
Technical field
This disclosure relates to technical field of semiconductors, it particularly relates to a kind of imaging sensor and formation imaging sensor
Method.
Background technology
Incident light is possible to not be completely absorbed in the photodiode of imaging sensor, and there are a part of light to penetrate
Photodiode.This can cause quantum efficiency to reduce, and this part light of reach throught photodiode is it is possible that can enter other
Photodiode and cause the crosstalk of light.
Accordingly, there exist the demands to new technology.
Invention content
One purpose of the disclosure is to provide a kind of novel imaging sensor and the method for forming imaging sensor.
According to the disclosure in a first aspect, provide a kind of imaging sensor, including：First photodiode, for turning
The light of first band is changed, the first part of first photodiode is formed by the first semi-conducting material, first photoelectricity
The second part of diode is formed by the second semi-conducting material；And second photodiode, for converting the light of second band,
Second photodiode is formed by the second semi-conducting material, wherein, at least part wavelength of the first band is more than institute
The wavelength of second band is stated, the band gap of first semi-conducting material is less than the band gap of second semi-conducting material.
According to the second aspect of the disclosure, a kind of method for forming imaging sensor is provided, including：In Semiconductor substrate
The middle second part and the second photodiode for forming the first photodiode, wherein, first photodiode is used to turn
Change the light of first band, second photodiode is used to convert the light of second band, and the Semiconductor substrate is by the second half
Conductor material is formed；And first photodiode for covering the second part is formed on the second part
First part, wherein, the first part is formed by the first semi-conducting material, wherein, at least part wave of the first band
The long wavelength more than the second band, the band gap of first semi-conducting material are less than the energy of second semi-conducting material
Band gap.
By referring to the drawings to the detailed description of the exemplary embodiment of the disclosure, the other feature of the disclosure and its
Advantage will become apparent.
Description of the drawings
The attached drawing of a part for constitution instruction describes embodiment of the disclosure, and is used to solve together with the description
Release the principle of the disclosure.
With reference to attached drawing, according to following detailed description, the disclosure can be more clearly understood, wherein：
Fig. 1 is the schematic diagram of the structure for the imaging sensor for schematically showing one embodiment according to the disclosure.
Fig. 2 to 5 is the first light in the imaging sensor schematically shown according to one embodiment of the disclosure respectively
The schematic diagram of the structure of electric diode.
Fig. 6 is the schematic diagram of the structure for the imaging sensor for schematically showing one embodiment according to the disclosure.
Fig. 7 to 10 is to respectively illustrate forming the one of imaging sensor according to one exemplary embodiment of the disclosure
The schematic diagram in the section of the imaging sensor at the exemplary each step of method.
Figure 11 is the schematic diagram of the structure for the imaging sensor for schematically showing one embodiment according to the disclosure.
Figure 12 to 14 is to respectively illustrate forming the one of imaging sensor according to one exemplary embodiment of the disclosure
The schematic diagram in the section of the imaging sensor at a exemplary each step of method.
Note that in embodiments described below, same reference numeral is used in conjunction between different attached drawings sometimes
Come the part for representing same section or there is identical function, and omit its repeated explanation.In the present specification, using similar mark
Number and letter represent similar terms, therefore, once being defined in a certain Xiang Yi attached drawing, then do not needed in subsequent attached drawing pair
It is further discussed.
In order to make it easy to understand, position, size and range of each structure shown in attached drawing etc. etc. does not indicate that reality sometimes
Position, size and range etc..Therefore, disclosed invention is not limited to position, size and range disclosed in attached drawing etc. etc..
Specific embodiment
The various exemplary embodiments of the disclosure are described in detail now with reference to attached drawing.It should be noted that：Unless in addition have
Body illustrates that the unlimited system of component and the positioned opposite of step, numerical expression and the numerical value otherwise illustrated in these embodiments is originally
Scope of disclosure.
It is illustrative to the description only actually of at least one exemplary embodiment below, is never used as to the disclosure
And its application or any restrictions that use.
Technology, method and apparatus known to person of ordinary skill in the relevant may be not discussed in detail, but suitable
In the case of, the technology, method and apparatus should be considered as authorizing part of specification.
In shown here and discussion all examples, any occurrence should be construed as merely illustrative, without
It is as limitation.Therefore, the other examples of exemplary embodiment can have different values.
In the disclosure, " one embodiment ", referring to for " some embodiments " are meaned to combine embodiment description
Feature, structure or characteristic are included at least one embodiment of the disclosure, at least some embodiments.Therefore, phrase is " at one
In embodiment ", " in some embodiments " be not necessarily referring in the appearance everywhere of the disclosure it is same or with some embodiments.This
It outside, in one or more embodiments, can in any suitable combination and/or sub-portfolio comes assemblage characteristic, structure or characteristic.
As shown in Figure 1, the imaging sensor of the disclosure includes the first photodiode 10 and the second photodiode 20.Its
In, the first photodiode 10 is used to convert the light of first band, and the second photodiode 20 is used to convert the light of second band.
The first part 11 of first photodiode 10 is formed by the first semi-conducting material, and second part 12 is by the second semi-conducting material
It is formed.Second photodiode 20 is formed by the second semi-conducting material.Wherein, at least part wavelength of first band is more than second
The wavelength of wave band, the band gap (energy bandgap) of the first semi-conducting material is less than the band gap of the second semi-conducting material.
Semi-conducting material with smaller band gap, electronics therein are excited to conduction band (conduction by valence band
Band the minimum energy smaller that) must be obtained, i.e., be more easily excited, therefore is also more easily absorbed into light therein.Together
The semi-conducting material of sample thickness, the semi-conducting material with smaller band gap usually can band gap of the absorptance with bigger
The more light of semi-conducting material.Since the longer light of wavelength is more difficult to be absorbed, so it is usual to fully absorb longer wavelengths of light
The photodiode for needing the light shorter than fully absorbing wavelength thicker.Therefore in imaging sensor according to these embodiments
In, it is formed for the part in the photodiode of the longer light of absorbing wavelength by the smaller semi-conducting material of band gap, from
And so that in the case of the thickness for not increasing (or not increasing excessively) photodiode, longer wavelengths of light also can be complete
It absorbs.
In imaging sensor according to these embodiments, in some examples, the first photodiode 10 is used to convert
The light of first band can be feux rouges, the second photodiode 20 for the light of the second band of conversion can be green light and/
Or blue light；In other examples, light of first photodiode 10 for the first band of conversion can be infrared light, second
Light of the photodiode 20 for the second band of conversion can be feux rouges, green light and/or blue light；In other example, the
One photodiode 10 can be feux rouges and infrared light for the light of the first band of conversion, and the second photodiode 20 is used to turn
The light for the second band changed can be green light and/or blue light；In other example, the first photodiode 10 is for conversion
The light of first band can be infrared light, feux rouges, green light and/or blue light, and the second photodiode 20 is used for the second wave of conversion
The light of section can be ultraviolet light.It will be understood by those skilled in the art that it not is restricted that example above, which is only exemplary,
Nor exhaustive, as long as all or part of wavelength for meeting first band is more than the wavelength of second band.
In some embodiments, the first semi-conducting material is germanium silicon (SiGe), and the second semi-conducting material is silicon (Si).Ability
Field technique personnel be appreciated that the first semi-conducting material can include SiGe, GaAs, Pbs, PbSe, PbTe, GaSb, InN etc.,
Or the semi-conducting material of any two and above combination.Those skilled in the art are further appreciated that any III group (boron family) element
(B, Al, Ga, In, Tl), IV races (carbon family) element (C, Si, Ge, Sn, Pb), V races (nitrogen race) element (N, P, As, Sb, Bi) or class
It can be used in forming the first semi-conducting material like object.
In some embodiments, as shown in Figure 1, the first part 11 of the first photodiode 10 more leans on than second part 12
The surface for being used to receive light of nearly imaging sensor.Imaging sensor can be imaging sensor for receiving the surface of light
The back side of positive (for example, front irradiation formula imaging sensor) or imaging sensor is (for example, back illumination formula image sensing
Device).
In some embodiments, the structure of the first photodiode can be as shown in Fig. 2 to 5.Wherein, two pole of the first photoelectricity
Pipe is formed by the first semi-conducting material S1 and the second semi-conducting material S2.Wherein, the second semi-conducting material S2 (forms the first light
The material of the second part of electric diode) it is the first conduction type, the first semi-conducting material S1 (forms two pole of the first photoelectricity
The material of the first part of pipe) can be it is identical with the second semi-conducting material S2 be doped to the first conduction type or
Undoped semi-conducting material.
The region 30 of the second conduction type is formed in the first semi-conducting material S1 and/or the second semi-conducting material S2.
For example, the region 30 of the second conduction type can be made only in the first semi-conducting material S1 (as shown in Fig. 2, in this case
First semi-conducting material S1 needs to be doped to the first conduction type), it can also be made only in the second semi-conducting material S2 (such as
Shown in Fig. 4), it can also be formed simultaneously in the first semi-conducting material S1 and the second semi-conducting material S2 (as shown in Fig. 3,5).Example
Such as, the region 30 of the second conduction type can be formed from upper surface, be formed as shown in Figure 2,3 or from lower surface
, as shown in Figure 4,5.Although not shown in figures, it will be appreciated by a person skilled in the art that the region of the second conduction type
It 30 boundary can also be just in the first semi-conducting material S1 and the intersection of the second semi-conducting material S2.
In some embodiments, the first conduction type is p-type, and the second conduction type is N-type, i.e., in the semiconductor material of p-type
N-type region is formed in material so as to form photodiode.It will be understood by those skilled in the art that the first conduction type may be
N-type, the second conduction type may be p-type, i.e., p type island region domain is formed in the semi-conducting material of N-type so as to form two pole of photoelectricity
Pipe.
In some embodiments, as shown in fig. 6, imaging sensor includes the first photodiode PD1, two pole of the second photoelectricity
Pipe PD2 and third photodiode PD3.Wherein, the first photodiode PD1 is used to convert the light of first band, the second photoelectricity
Diode PD2 is used to convert the light of second band, and third photodiode PD3 is used to convert the light of third wave band.First photoelectricity
The first part of diode PD1 is formed by the first semi-conducting material SEM, and the second part of the first photodiode PD1 is by second
Semi-conducting material (part in Semiconductor substrate SUB) formation.Second photodiode PD2 and third photodiode PD3
It is formed by the second semi-conducting material (in Semiconductor substrate SUB).Wherein, at least part wavelength of first band is more than second
The wavelength of wave band, at least part wavelength of second band are more than the wavelength of third wave band, and the band gap of the first semi-conducting material is small
In the band gap of the second semi-conducting material.
In some embodiments, the color space of imaging sensor be rgb space, the first photodiode PD1, the second light
Electric diode PD2 and third photodiode PD3 is respectively used to conversion feux rouges, green light and blue light.
In some embodiments, imaging sensor further includes is located at the first photodiode PD1, two pole of the second photoelectricity respectively
On pipe PD2 and third photodiode PD3 and be covered each by the first photodiode PD1, the second photodiode PD2 and
The first colour filter CF1, the second colour filter CF2 and the third colour filter CF3 of third photodiode PD3.Wherein, the first colour filter
Device CF1, the second colour filter CF2 and third colour filter CF3 are respectively used to through feux rouges, green light and blue light.
The method that the formation imaging sensor according to an embodiment of the present disclosure is described with reference to Fig. 7 to 10.
As shown in fig. 7, form the first photodiode in the Semiconductor substrate SUB formed by the second semi-conducting material
Second part, the second photodiode and third photodiode.The Semiconductor substrate in the first conduction type can be passed through
The region of the second conduction type is formed in SUB to form each photodiode.For example, in the Semiconductor substrate of the first conduction type
The first area REG1 of the second conduction type is formed in SUB to form the second part of the first photodiode, in the first conduction
The second area REG2 of the second conduction type is formed in the Semiconductor substrate SUB of type come formed the second photodiode and
The third region REG3 of the second conduction type is formed in the Semiconductor substrate SUB of the first conduction type to form third photoelectricity two
Pole pipe.
Next, the second part of the first photodiode of covering is formed on the second part of the first photodiode
The first photodiode first part, wherein, the first part of the first photodiode is formed by the first semi-conducting material,
And the band gap of the first semi-conducting material is less than the band gap of the second semi-conducting material.
Specifically, as shown in fig. 7, first forming dielectric material layer L1 on Semiconductor substrate SUB.Dielectric material layer
L1 can be formed by silica or formed by other dielectric substances such as silicon nitride.Dielectric material layer
L1 can pass through chemical vapor deposition (CVD) processing, atomic layer deposition (ALD) processing, thermal oxidation or other suitable hands
Section and formed.
As shown in figure 8, the part of the second part of the first photodiode of covering of removal dielectric material layer L1, with
Notch as shown in Figure 8 is formed in dielectric material layer L1, and exposes in the notch second of the first photodiode
Point, that is, expose Semiconductor substrate SUB.The processing of etching can be added to form the notch by photoetching, other can also be passed through
For example hard mask of means adds the processing of etching to form the notch.
As shown in figure 9, the first semi-conducting material SEM is filled in the notch as shown in Figure 8 of formation, so as to expose
The first photodiode second part on form the first part of the first photodiode, to ultimately form entire first light
Electric diode.Wherein, the band gap of the first semi-conducting material is less than the band gap of the second semi-conducting material.Chemical gas can be passed through
Phase deposition processes, atomic layer deposition processing or molecular beam epitaxy (MBE) processing etc. form first of the first photodiode
Point.Preferably, the treatment temperature of first part is formed less than 500 DEG C, it, in this way can be to avoid to more preferably to be less than 450 DEG C
Device, metal interconnecting layer through formation etc. have an impact.
Then can around each photodiode, formed it is all or part of around the photodiode for should
Isolation structure I1, I2 that photodiode and neighbouring photodiode are kept apart, for example, deep trench isolation (DTI) structure or
Shallow-trench isolation (STI) structure etc., as shown in Figure 10.It can be initially formed on dielectric material layer L1 by dielectric substance later
The filled layer L2 of formation (such as can be any suitable work(such as anti-reflecting layer, high dielectric constant layer, planarization layer, wall
Ergosphere), then colour filter is formed on filled layer L2, such as be respectively used to the first photodiode, the second photodiode and
The first colour filter CF1, the second colour filter CF2 and the third colour filter CF3 of three photodiodes.Wherein, the first colour filter CF1,
Second colour filter CF2 and third colour filter CF3.It is located at the first photodiode, the second photodiode and third light respectively
On electric diode and it is covered each by the first photodiode, the second photodiode and third photodiode.Each colour filter
Between also between be separated with optically isolated structure I 3, I4.Later, it is also respectively formed on each colour filter and is covered each by the first colour filter
The first lenticule ML1 of CF1, the second colour filter CF2 and third colour filter CF3, the second lenticule ML2 and third lenticule
ML3, so as to form imaging sensor as shown in Figure 6.
The material of each colour filter is suitably selected, so that the first colour filter CF1, the second colour filter CF2 and third colour filter
CF3 is respectively used to light, the light of second band and the light of third wave band through first band.So that two pole of the first photoelectricity
Pipe is for converting the light of first band, and the second photodiode is used to convert the light of second band, and third photodiode is used for
Convert the light of third wave band.Wherein, at least part wavelength of first band is more than the wavelength of second band, and second band is at least
Subwave length is more than the wavelength of third wave band.In some examples, the color space of imaging sensor is rgb space, and first filters
Color device CF1, the second colour filter CF2 and third colour filter CF3 are respectively used to through feux rouges, green light and blue light, the first photoelectricity two
Pole pipe, the second photodiode and third photodiode are respectively used to conversion feux rouges, green light and blue light.
It will be understood by those skilled in the art that it can also be formed before dielectric material layer L1 is formed for by photoelectricity two
Isolation structure I1, I2 that pole pipe is kept apart with neighbouring photodiode, for example, forming imaging sensor as shown in figure 11.
As shown in figure 12, the first photodiode is formed in the Semiconductor substrate SUB formed by the second semi-conducting material
Second part, the second photodiode and third photodiode.Then it around each photodiode, is formed all
Or isolation structure of the part around the photodiode for the photodiode and neighbouring photodiode are kept apart
I1, I2, such as deep trench isolation (DTI) structure or shallow-trench isolation (STI) structure etc., as shown in figure 12.Next, partly leading
Dielectric material layer L1 is formed on body substrate SUB.Then, the first photodiode of covering of dielectric material layer L1 is removed
The part of second part to form notch as shown in fig. 13 that in dielectric material layer L1, and exposes in the notch
The second part of one photodiode exposes Semiconductor substrate SUB.As shown in figure 14, in formation as shown in fig. 13 that
The first semi-conducting material SEM is filled in notch, so as to form first on the second part of the first photodiode exposed
The first part of photodiode, to ultimately form entire first photodiode.Wherein, the band gap of the first semi-conducting material
Less than the band gap of the second semi-conducting material.It can be initially formed on dielectric material layer L1 and be formed by dielectric substance later
Filled layer L2, then on filled layer L2 formed be respectively used to the first photodiode, the second photodiode and third photoelectricity
It is the first colour filter CF1, the second colour filter CF2 and the third colour filter CF3 of diode and the first lenticule ML1, second micro-
Lens ML2 and third lenticule ML3, so as to form imaging sensor as shown in figure 11.
The material of each colour filter is suitably selected, so that the first colour filter CF1, the second colour filter CF2 and third colour filter
CF3 is respectively used to light, the light of second band and the light of third wave band through first band.So that two pole of the first photoelectricity
Pipe is for converting the light of first band, and the second photodiode is used to convert the light of second band, and third photodiode is used for
Convert the light of third wave band.Wherein, at least part wavelength of first band is more than the wavelength of second band, and second band is at least
Subwave length is more than the wavelength of third wave band.In some examples, the color space of imaging sensor is rgb space, and first filters
Color device CF1, the second colour filter CF2 and third colour filter CF3 are respectively used to through feux rouges, green light and blue light, the first photoelectricity two
Pole pipe, the second photodiode and third photodiode are respectively used to conversion feux rouges, green light and blue light.
Although the method to form imaging sensor as shown in Figure 6 is described only in conjunction with Fig. 7 to 10 above and combines figure
12 to 14 describe the method to form imaging sensor as shown in figure 11, but those skilled in the art can obtain forming this public affairs
The method for opening described all imaging sensors.
Although the imaging sensor of pixel region is only schematically shown in the attached drawing of the disclosure in sectional view
Structure, those skilled in the art can obtain the imaging sensor entirety involved by the disclosure based on the content that the disclosure is recorded
Structure and forming method.
Word " A or B " in specification and claim is exclusively wrapped including " A and B " and " A or B " rather than only
It includes " A " or only includes " B ", unless otherwise specified.
Word "front", "rear", " top ", " bottom " in specification and claim, " on ", " under " etc., if deposited
If, it is not necessarily used to describe constant relative position for descriptive purposes.It should be appreciated that the word used in this way
Language is interchangeable in appropriate circumstances so that embodiment of the disclosure described herein, for example, can in this institute
Those of description show or other are orientated in other different orientations and operate.
As used in this, word " illustrative " means " be used as example, example or explanation ", not as will be by
" model " accurately replicated.It is not necessarily to be interpreted than other realization methods in the arbitrary realization method of this exemplary description
Preferred or advantageous.Moreover, the disclosure is not by above-mentioned technical field, background technology, invention content or specific embodiment
Given in the theory that is any stated or being implied that goes out limited.
As used in this, word " substantially " mean comprising by design or manufacture the defects of, device or element appearance
Arbitrary small variation caused by difference, environment influence and/or other factors.Word " substantially " also allows by ghost effect, makes an uproar
Caused by sound and the other practical Considerations being likely to be present in practical realization method with perfect or ideal situation
Between difference.
Foregoing description can indicate to be " connected " or " coupled " element together or node or feature.As used herein
, unless explicitly stated otherwise, " connection " means an element/node/feature with another element/node/feature in electricity
Above, it is directly connected mechanically, in logic or in other ways (or direct communication).Similarly, unless explicitly stated otherwise,
" coupling " mean an element/node/feature can with another element/node/feature in a manner of direct or be indirect in machine
On tool, electrically, in logic or in other ways link to allow to interact, even if the two features may not direct
Connection is also such.That is, " coupling " is intended to encompass the direct connection and connection indirectly of element or other feature, including profit
With the connection of one or more intermediary elements.
In addition, just to the purpose of reference, can also be described below it is middle use certain term, and thus not anticipate
Figure limits.For example, unless clearly indicated by the context, be otherwise related to the word " first " of structure or element, " second " and it is other this
Class number word does not imply order or sequence.
It should also be understood that one word of "comprises/comprising" as used herein, illustrates that there are pointed feature, entirety, steps
Suddenly, operation, unit and/or component, but it is not excluded that in the presence of or increase one or more of the other feature, entirety, step, behaviour
Work, unit and/or component and/or combination thereof.
In the disclosure, therefore term " offer " " it is right to provide certain from broadly by covering obtain object all modes
As " including but not limited to " purchase ", " preparation/manufacture ", " arrangement/setting ", " installation/assembling ", and/or " order " object etc..
It should be appreciated by those skilled in the art that the boundary between aforesaid operations is merely illustrative.Multiple operations
Single operation can be combined into, single operation can be distributed in additional operation, and operate can at least portion in time
Divide and overlappingly perform.Moreover, alternative embodiment can include multiple examples of specific operation, and in other various embodiments
In can change operation order.But others are changed, variations and alternatives are equally possible.Therefore, the specification and drawings
It should be counted as illustrative and not restrictive.
In addition, embodiment of the present disclosure can also include the example below：
1. a kind of imaging sensor, which is characterized in that including：
First photodiode, for converting the light of first band, the first part of first photodiode is by
Semiconductor material is formed, and the second part of first photodiode is formed by the second semi-conducting material；And
Second photodiode, for converting the light of second band, second photodiode is by the second semiconductor material
Material is formed,
Wherein, at least part wavelength of the first band is more than the wavelength of the second band, first semiconductor
The band gap of material is less than the band gap of second semi-conducting material.
2. the imaging sensor according to 1, which is characterized in that the first part is than the second part closer to institute
State the surface for being used to receive light of imaging sensor.
3. the imaging sensor according to 1, which is characterized in that further include：
Third photodiode, for converting the light of third wave band, the third photodiode is by the second semiconductor material
Material is formed,
Wherein, at least part wavelength of the second band is more than the wavelength of the third wave band.
4. the imaging sensor according to 3, which is characterized in that described first, second and third photodiode difference
For converting feux rouges, green light and blue light.
5. the imaging sensor according to 3, which is characterized in that further include：
It is located on described first, second and third photodiode respectively and is covered each by first, second and
First, second and third colour filter of third photodiode,
Wherein, described first, second and third colour filter be respectively used to through feux rouges, green light and blue light.
6. the imaging sensor according to 1, which is characterized in that the first part and the second part are first
Conduction type, and the region of the second conduction type is formed in the first part and/or the second part.
7. the imaging sensor according to 6, which is characterized in that first conduction type is p-type, and described second is conductive
Type is N-type.
8. the imaging sensor according to 1, which is characterized in that first semi-conducting material be germanium silicon, described second
Semi-conducting material is silicon.
A kind of 9. method for forming imaging sensor, which is characterized in that including：
The second part and the second photodiode of the first photodiode are formed in the semiconductor substrate, wherein, it is described
First photodiode is used to convert the light of first band, and second photodiode is used to convert the light of second band, institute
Semiconductor substrate is stated to be formed by the second semi-conducting material；And
The first part for first photodiode for covering the second part is formed on the second part,
Wherein, the first part is formed by the first semi-conducting material,
Wherein, at least part wavelength of the first band is more than the wavelength of the second band, first semiconductor
The band gap of material is less than the band gap of second semi-conducting material.
10. the method according to 9, which is characterized in that the first part is formed on the second part and is included：
Dielectric material layer is formed on the Semiconductor substrate；
The part of the covering second part of the dielectric material layer is removed, to expose the second part；With
And
The first part is formed on the second part exposed.
11. the method according to 9, which is characterized in that by chemical vapor deposition process, atomic layer deposition processing or
Molecular beam epitaxy processing forms the first part.
12. the method according to 11, which is characterized in that the treatment temperature for forming the first part is less than 500 DEG C.
13. the method according to 11, which is characterized in that the treatment temperature for forming the first part is less than 450 DEG C.
14. the method according to 9, which is characterized in that further include：
Third photodiode is formed in the semiconductor substrate, wherein, the third photodiode is used to convert third
The light of wave band, the Semiconductor substrate are formed by the second semi-conducting material,
Wherein, at least part wavelength of the second band is more than the wavelength of the third wave band.
15. the method according to 14, which is characterized in that described first, second and third photodiode be respectively used to
Convert feux rouges, green light and blue light.
16. the method according to 14, which is characterized in that further include：
It is formed on described first, second and third photodiode and is covered each by described first, second and third
First, second and third colour filter of photodiode,
Wherein, described first, second and third colour filter be respectively used to through feux rouges, green light and blue light.
17. the method according to 9, which is characterized in that the first part and the second part are the first conduction
Type, and the region of the second conduction type is formed in the first part and/or the second part.
18. the method according to 17, which is characterized in that first conduction type be p-type, second conduction type
For N-type.
19. the method according to 9, which is characterized in that first semi-conducting material be germanium silicon, second semiconductor
Material is silicon.
Although some specific embodiments of the disclosure are described in detail by example, the skill of this field
Art personnel it should be understood that above example merely to illustrating rather than in order to limit the scope of the present disclosure.It is disclosed herein
Each embodiment can in any combination, without departing from spirit and scope of the present disclosure.It is to be appreciated by one skilled in the art that can be with
A variety of modifications are carried out to embodiment without departing from the scope and spirit of the disclosure.The scope of the present disclosure is limited by appended claims
It is fixed.
Claims (10)
1. a kind of imaging sensor, which is characterized in that including：
First photodiode, for converting the light of first band, the first part of first photodiode is by the first half
Conductor material is formed, and the second part of first photodiode is formed by the second semi-conducting material；And
Second photodiode, for converting the light of second band, second photodiode is by the second semi-conducting material shape
Into,
Wherein, at least part wavelength of the first band is more than the wavelength of the second band, first semi-conducting material
Band gap be less than second semi-conducting material band gap.
2. imaging sensor according to claim 1, which is characterized in that the first part more leans on than the second part
The surface for being used to receive light of nearly described image sensor.
3. imaging sensor according to claim 1, which is characterized in that further include：
Third photodiode, for converting the light of third wave band, the third photodiode is by the second semi-conducting material shape
Into,
Wherein, at least part wavelength of the second band is more than the wavelength of the third wave band.
4. imaging sensor according to claim 3, which is characterized in that described first, second and third photodiode
It is respectively used to conversion feux rouges, green light and blue light.
5. imaging sensor according to claim 3, which is characterized in that further include：
It is located on described first, second and third photodiode respectively and is covered each by described first, second and third
First, second and third colour filter of photodiode,
Wherein, described first, second and third colour filter be respectively used to through feux rouges, green light and blue light.
6. imaging sensor according to claim 1, which is characterized in that the first part and the second part are
First conduction type, and the region of the second conduction type is formed in the first part and/or the second part.
7. imaging sensor according to claim 6, which is characterized in that first conduction type be p-type, described second
Conduction type is N-type.
8. imaging sensor according to claim 1, which is characterized in that first semi-conducting material is germanium silicon, described
Second semi-conducting material is silicon.
A kind of 9. method for forming imaging sensor, which is characterized in that including：
The second part and the second photodiode of the first photodiode are formed in the semiconductor substrate, wherein, described first
Photodiode is used to converting the light of first band, and second photodiode is used to convert the light of second band, and described half
Conductor substrate is formed by the second semi-conducting material；And
The first part for first photodiode for covering the second part is formed on the second part,
In, the first part is formed by the first semi-conducting material,
Wherein, at least part wavelength of the first band is more than the wavelength of the second band, first semi-conducting material
Band gap be less than second semi-conducting material band gap.
10. according to the method described in claim 9, it is characterized in that, the first part is formed on the second part
Including：
Dielectric material layer is formed on the Semiconductor substrate；
The part of the covering second part of the dielectric material layer is removed, to expose the second part；And
The first part is formed on the second part exposed.
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