CN106222746A - Single crystal growing furnace melt time shortening device and method - Google Patents
Single crystal growing furnace melt time shortening device and method Download PDFInfo
- Publication number
- CN106222746A CN106222746A CN201610905601.6A CN201610905601A CN106222746A CN 106222746 A CN106222746 A CN 106222746A CN 201610905601 A CN201610905601 A CN 201610905601A CN 106222746 A CN106222746 A CN 106222746A
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- China
- Prior art keywords
- single crystal
- crystal growing
- growing furnace
- induction coil
- time shortening
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/14—Heating of the melt or the crystallised materials
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The present invention relates to single crystal growing furnace melt time shortening device and method, single crystal growing furnace melt time shortening device includes graphite crucible, the outer surface of described graphite crucible is wound with induction coil, and described induction coil has circuit terminal.Single crystal growing furnace melt time method for reducing, including single crystal growing furnace, the silica crucible equipped with silicon material, heater, single crystal growing furnace melt time shortening device, when melt starts, opens heater, and connects induction coil, after silicon material melts, closes induction coil.By on the outer surface of graphite crucible around induction coil, can start melted silicon material when, by induction coil be energized, together with the heater in existing single crystal growing furnace, silicon material is heated, improve the efficiency of heating surface, shorten the silicon material thawing time, improve the production efficiency of monocrystal rod.
Description
Technical field
The invention belongs to monocrystalline silicon production technical field, relate to a kind of single crystal growing furnace melt time shortening device and method.
Background technology
In field of photovoltaic power generation, monocrystal silicon is the important materials of solaode, the one-tenth of current monocrystalline solar electrical energy generation
This is about at 1 yuan/degree, and the cost of solar electrical energy generation is mainly the cost of solar battery sheet fabrication and processing, after power station is built up
Administration fee is at a fairly low.The cost of solar electrical energy generation to be reduced, or the conversion of monocrystalline solar cells sheet will be improved
Efficiency, or the processing cost of cell piece will be reduced.The commercial batteries efficiency of large-scale production now has reached 16%-
18%, almost without room for improvement, the unit cost of monocrystalline solar electrical energy generation to be reduced will be set about from solar battery sheet.Monocrystalline
The cost of the cell piece base material silicon chip of solar electrical energy generation accounts for about the 70% of cell piece totle drilling cost, and the crystal pulling cost of monocrystalline silicon piece accounts for
The 70% of whole monocrystalline silicon piece production cost.So the cost of solar electrical energy generation to be reduced is it is necessary to the production reducing monocrystal rod becomes
This.
The growing method of monocrystal rod uses vertical pulling method to produce in single crystal growing furnace mostly now.All of melt is all adopted
Carry out heating with graphite heater, because of in the middle of heater and silicon material across silica crucible, graphite crucible two-layer, slow leading of absorbing heat
Cause heat time heating time long.Single crystal growing furnace carry out the technological process of vertical pulling method monocrystalline production include shove charge, feed, close stove, evacuate, molten
Material, seeding, necking down, shouldering, isometrical, ending, blowing out, tearing the techniques such as stove open, above-mentioned a whole set of production technology is time-consuming about at 80 hours
Left and right, owing to the firing rate of single crystal growing furnace makes present melt technique need 8-10 hour slowly, the overall crystal pulling efficiency of impact,
Production cost is high.
Summary of the invention
Based on this, it is necessary to provide the single crystal growing furnace of a kind of production efficiency shortening silicon material thawing time, raising monocrystal rod to melt
Material time shortening device and method.
A kind of single crystal growing furnace melt time shortening device, including graphite crucible, around thoughts on the outer surface of described graphite crucible
Coil, described induction coil is answered to have circuit terminal.
The advantage of the application single crystal growing furnace melt time shortening device is: by the outer surface of graphite crucible around sensing
Coil, can be energized induction coil starting melted silicon material when, right together with the heater in existing single crystal growing furnace
Silicon material heats, and improves the efficiency of heating surface, shortens the silicon material thawing time, improves the production efficiency of monocrystal rod.
Wherein in an embodiment, the outer surface of described graphite crucible is provided with the spiral for accommodating induction coil
The groove of shape, described induction coil is wound on the outer surface of graphite crucible along described groove.
Wherein in an embodiment, it also includes the controller answering coil electricity and power-off for Perceived control.
Wherein in an embodiment, single crystal growing furnace melt time shortening device also includes being arranged on the two of single crystal growing furnace outer bottom
Individual electrode, the circuit terminal of described induction coil is connectable on two electrodes of single crystal growing furnace outer bottom.
Wherein in an embodiment, two electrodes of single crystal growing furnace outer bottom are copper electrode.
Wherein in an embodiment, controller can regulate the voltage and current of induction coil.
Wherein in an embodiment, described single crystal growing furnace melt time shortening device also includes the temperature being arranged in single crystal growing furnace
Degree sensor, described temperature-sensitive sticker is connected to controller.
A kind of single crystal growing furnace melt time method for reducing, utilizes above-mentioned single crystal growing furnace melt time shortening device, and step is as follows:
When melt starts, open the heater in single crystal growing furnace, and connect induction coil；
After silicon material melts, close induction coil.
The advantage of the application single crystal growing furnace melt time method for reducing is: by the outer surface of graphite crucible around sensing
Coil, can be energized induction coil starting melted silicon material when, right together with the heater in existing single crystal growing furnace
Silicon material heats, and improves the efficiency of heating surface, shortens the silicon material thawing time, improves the production efficiency of monocrystal rod.
Wherein in an embodiment, after connecting induction coil, set the voltage and current of induction coil to the number needed
Value.
Wherein in an embodiment, after connecting induction coil, the voltage setting induction coil as 40-60V, electric current is
700-800A。
Accompanying drawing explanation
Fig. 1 is the structural representation of single crystal growing furnace melt time shortening device of the present invention；
Fig. 2 is the partial enlarged drawing of Fig. 1；
Fig. 3 is the structural representation of single crystal growing furnace outer bottom.
Detailed description of the invention
Understandable, below in conjunction with the accompanying drawings to the present invention for enabling the above-mentioned purpose of the present invention, feature and advantage to become apparent from
Detailed description of the invention be described in detail.Elaborate a lot of detail in the following description so that fully understanding this
Bright.But the present invention can implement to be much different from alternate manner described here, and those skilled in the art can be not
Doing similar improvement in the case of running counter to intension of the present invention, therefore the present invention is not limited by following public specific embodiment.
Below in conjunction with the accompanying drawings, the better embodiment of the present invention is described.
As Figure 1-3, the single crystal growing furnace melt time shortening device of the application, including graphite crucible 2, graphite crucible 2
Being wound with induction coil 8 on outer surface, induction coil 8 has circuit terminal 1,3.By on the outer surface of graphite crucible around sense
Answer coil, induction coil can be energized, together with the heater in existing single crystal growing furnace starting melted silicon material when
Silicon material is heated, improves the efficiency of heating surface, shorten the silicon material thawing time, improve the production efficiency of monocrystal rod.Graphite crucible 2
Being provided with the spiral helicine groove 7 for accommodating induction coil 8 on outer surface, induction coil 8 is wound on graphite crucible along groove 7
On the outer surface of 2.Arrange groove 7 to be advantageous in that: prevent induction coil 8 from mutually touching, cause short circuit.
It also includes that controller can regulate induction coil 8 for controlling induction coil 8 energising and the controller of power-off
Voltage and current.Single crystal growing furnace melt time shortening device also includes the temperature-sensitive sticker being arranged in single crystal growing furnace, this temperature sensing
Device is for sensing the temperature in single crystal growing furnace, and temperature-sensitive sticker is connected to controller.
Single crystal growing furnace melt time shortening device also includes two electrodes 5,6 being arranged on single crystal growing furnace 4 outer bottom, induction coil
The circuit terminal 1,3 of 8 can be connected respectively on two electrodes 5,6 of single crystal growing furnace 4 outer bottom.Two of single crystal growing furnace outer bottom
Electrode is copper electrode, and these two copper electrodes are connected in electrical control cubicles.
A kind of single crystal growing furnace melt time method for reducing, including single crystal growing furnace, the silica crucible equipped with silicon material, heater, list
Brilliant stove melt time shortening device, when melt starts, opens heater, and connects induction coil 8, treat that silicon material melts
After, close induction coil 8, the most remaining heater works on.Wherein, after connecting induction coil 8, controller can be passed through
Set the voltage and current of induction coil 8 to the numerical value needed.
Embodiment 1: after connecting induction coil 8, the voltage setting induction coil 8 is 700A as 40V, electric current, and power is
30KW, after melting to silicon material, closes induction coil 8.The thawing time of whole silicon material can save 1.5 relative to prior art
Hour.
Embodiment 2: after connecting induction coil 8, the voltage setting induction coil 8 is 800A as 60V, electric current, and power is
48KW, after melting to silicon material, closes induction coil 8.The thawing time of whole silicon material relative to prior art can save 2 little
Time.
Each technical characteristic of embodiment described above can combine arbitrarily, for making description succinct, not to above-mentioned reality
The all possible combination of each technical characteristic executed in example is all described, but, as long as the combination of these technical characteristics is not deposited
In contradiction, all it is considered to be the scope that this specification is recorded.
Embodiment described above only have expressed the several embodiments of the present invention, and it describes more concrete and detailed, but also
Can not therefore be construed as limiting the scope of the patent.It should be pointed out that, come for those of ordinary skill in the art
Saying, without departing from the inventive concept of the premise, it is also possible to make some deformation and improvement, these broadly fall into the protection of the present invention
Scope.Therefore, the protection domain of patent of the present invention should be as the criterion with claims.
Claims (10)
1. a single crystal growing furnace melt time shortening device, it is characterised in that: include graphite crucible, the outer surface of described graphite crucible
On be wound with induction coil, described induction coil has circuit terminal.
Single crystal growing furnace melt time shortening device the most according to claim 1, it is characterised in that: the appearance of described graphite crucible
Being provided with the spiral helicine groove for accommodating induction coil on face, described induction coil is wound on graphite crucible along described groove
Outer surface on.
Single crystal growing furnace melt time shortening device the most according to claim 1, it is characterised in that: it also includes for Perceived control
Answer the controller of coil electricity and power-off.
Single crystal growing furnace melt time shortening device the most according to claim 1, it is characterised in that: the single crystal growing furnace melt time shortens
Device also includes two electrodes being arranged on single crystal growing furnace outer bottom, and the circuit terminal of described induction coil is connectable to monocrystalline
On two electrodes of stove outer bottom.
Single crystal growing furnace melt time shortening device the most according to claim 4, it is characterised in that: two of single crystal growing furnace outer bottom
Electrode is copper electrode.
Single crystal growing furnace melt time shortening device the most according to claim 3, it is characterised in that: controller can regulate sensing
The voltage and current of coil.
Single crystal growing furnace melt time shortening device the most according to claim 3, it is characterised in that: the described single crystal growing furnace melt time
Shortening device also includes the temperature-sensitive sticker being arranged in single crystal growing furnace, and described temperature-sensitive sticker is connected to controller.
8. a single crystal growing furnace melt time method for reducing, it is characterised in that: utilize the single crystal growing furnace melt as described in claim 1-7
Time shortening device, step is as follows:
When melt starts, open the heater in single crystal growing furnace, and connect induction coil；
After silicon material melts, close induction coil.
Single crystal growing furnace melt time method for reducing the most according to claim 8, it is characterised in that: after connecting induction coil, if
Determine the voltage and current of induction coil to the numerical value needed.
Single crystal growing furnace melt time method for reducing the most according to claim 9, it is characterised in that: after connecting induction coil, if
The voltage determining induction coil is 40-60V, and electric current is 700-800A.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610905601.6A CN106222746A (en) | 2016-10-17 | 2016-10-17 | Single crystal growing furnace melt time shortening device and method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610905601.6A CN106222746A (en) | 2016-10-17 | 2016-10-17 | Single crystal growing furnace melt time shortening device and method |
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| Publication Number | Publication Date |
|---|---|
| CN106222746A true CN106222746A (en) | 2016-12-14 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201610905601.6A Pending CN106222746A (en) | 2016-10-17 | 2016-10-17 | Single crystal growing furnace melt time shortening device and method |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04342491A (en) * | 1991-05-21 | 1992-11-27 | Osaka Titanium Co Ltd | Production of silicon single crystal by electromagnetic melting |
| CN101755075A (en) * | 2007-07-20 | 2010-06-23 | Bp北美公司 | Methods and apparatuses for manufacturing cast silicon from seed crystals |
| CN103890240A (en) * | 2011-08-31 | 2014-06-25 | 原子能和代替能源委员会 | System for manufacturing a crystalline material by directional crystallization provided with an additional lateral heat source |
| CN203923445U (en) * | 2014-05-30 | 2014-11-05 | 宁夏隆基硅材料有限公司 | A kind of single crystal growing furnace combination heater |
| CN206188920U (en) * | 2016-10-17 | 2017-05-24 | 宁夏协鑫晶体科技发展有限公司 | Single crystal growing furnace melt time contraction device |
-
2016
- 2016-10-17 CN CN201610905601.6A patent/CN106222746A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04342491A (en) * | 1991-05-21 | 1992-11-27 | Osaka Titanium Co Ltd | Production of silicon single crystal by electromagnetic melting |
| CN101755075A (en) * | 2007-07-20 | 2010-06-23 | Bp北美公司 | Methods and apparatuses for manufacturing cast silicon from seed crystals |
| CN103890240A (en) * | 2011-08-31 | 2014-06-25 | 原子能和代替能源委员会 | System for manufacturing a crystalline material by directional crystallization provided with an additional lateral heat source |
| CN203923445U (en) * | 2014-05-30 | 2014-11-05 | 宁夏隆基硅材料有限公司 | A kind of single crystal growing furnace combination heater |
| CN206188920U (en) * | 2016-10-17 | 2017-05-24 | 宁夏协鑫晶体科技发展有限公司 | Single crystal growing furnace melt time contraction device |
Non-Patent Citations (2)
| Title |
|---|
| 《中国电力百科全书》编辑部编: "《中国电力百科全书·用电卷》", 31 March 2001 * |
| 南京工学院主编: "《无线电元器件制造工艺及设备》", 31 July 1980, 国防工业大学出版社 * |
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Application publication date: 20161214 |