CN106206334A - Monitoring wafer and the monitoring method of metallic pollution - Google Patents
Monitoring wafer and the monitoring method of metallic pollution Download PDFInfo
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- CN106206334A CN106206334A CN201510231037.XA CN201510231037A CN106206334A CN 106206334 A CN106206334 A CN 106206334A CN 201510231037 A CN201510231037 A CN 201510231037A CN 106206334 A CN106206334 A CN 106206334A
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Abstract
In the monitoring wafer of the present invention and the monitoring method of metallic pollution, monitoring wafer includes Semiconductor substrate, metal diffusion barrier layer, etching barrier layer and metal adsorption layer, described metal diffusion barrier layer is formed at the side of described Semiconductor substrate, described etching barrier layer is formed at described metal diffusion barrier layer and deviates from the side of described Semiconductor substrate, and described metal adsorption layer is formed at described etching barrier layer and deviates from the side of described metal diffusion barrier layer.The monitoring method of the metallic pollution of the present invention, it is provided that described monitoring wafer, puts into equipment to be monitored by described monitoring wafer, take out after processing, use the first solvent soln and second to dissolve Ei solution successively to process, obtain a monitoring solution, measure the concentration that described monitoring GOLD FROM PLATING SOLUTION belongs to.Described metal diffusion barrier layer can avoid metal to be diffused into the inside of Semiconductor substrate, and is mainly limited in described metal adsorption layer, thus improves the reliability of metal concentration monitoring.
Description
Technical field
The present invention relates to technical field of semiconductors, particularly relate to a kind of monitoring monitoring wafer and metallic pollution
Method.
Background technology
In semiconductor processes, production equipment can exist metal pollutant, thus affect production product
Quality, therefore, the monitoring for metallic pollution is most important.And, along with semiconductor technology live width
Being gradually reduced, the monitoring of metallic pollution seems even more important.In the monitoring method of existing metallic pollution, reference
Shown in Fig. 1, Semiconductor substrate 10 is used to detect, owing to the surface of described Semiconductor substrate 10 is scarce
Falling into exhaustion region, pass through in Devices to test after high-temperature process, the metal 50 on surface can partly be led to described rapidly
Defect enrichment region within body substrate 10 quickly spreads, the distribution of the metal 50 in described Semiconductor substrate 10
As it is shown in figure 1, but, the metal within described Semiconductor substrate 10 is difficult to monitor, therefore, existing
The metal concentration of the monitoring method detection of metallic pollution is less than actual concentrations, it is impossible to ensure the accuracy of detection.
Summary of the invention
It is an object of the invention to, it is provided that a kind of monitoring method structure monitoring wafer and metallic pollution, it is possible to
Avoid metal to be diffused into the inside of Semiconductor substrate, thus improve the reliability of monitoring.
For solving above-mentioned technical problem, the present invention provides a kind of monitoring wafer, it is characterised in that including:
Semiconductor substrate；
Metal diffusion barrier layer, is formed at the side of described Semiconductor substrate；
Etching barrier layer, is formed at described metal diffusion barrier layer and deviates from the side of described Semiconductor substrate；With
And
Metal adsorption layer, is formed at described etching barrier layer and deviates from the side of described metal diffusion barrier layer.
Optionally, described metal diffusion barrier layer is silicon oxide layer.
Optionally, the thickness of described silicon oxide layer is
Optionally, the growth temperature of described silicon oxide layer is 100 DEG C～200 DEG C.
Optionally, described etching barrier layer is silicon nitride layer.
Optionally, the thickness of described silicon nitride layer is
Optionally, described metal adsorption layer is polysilicon layer.
Optionally, the thickness of described polysilicon layer is
Optionally, the concretely comprising the following steps of concentration of the metal in described metal adsorption layer is monitored:
As the another side of the present invention, the present invention also provides for the monitoring method of a kind of metallic pollution, including:
Above-described monitoring wafer is provided；
Described monitoring wafer is put into equipment to be monitored, takes out after described monitoring wafer is processed；
The first solvent soln is used to process described metal adsorption layer；
The second solvent soln is used to process the described metal adsorption layer processed by described first solvent soln,
To a monitoring solution；And
Measure the concentration of metal in described monitoring solution.
Optionally, described first solvent soln is the mixed solution of Fluohydric acid. and hydrogen peroxide.
Optionally, described second solvent soln is the mixed solution of nitric acid and hydrogen peroxide.
Optionally, the temperature processing described monitoring wafer is 500 DEG C-800 DEG C.
Compared with prior art, the monitoring method of the metallic pollution that the present invention provides has the advantage that
In the monitoring method monitoring wafer and metallic pollution that the present invention provides, monitoring wafer includes quasiconductor
Substrate, metal diffusion barrier layer, etching barrier layer and metal adsorption layer, described metal diffusion barrier layer shape
The side of Semiconductor substrate described in Cheng Yu, described etching barrier layer is formed at described metal diffusion barrier layer to deviate from
The side of described Semiconductor substrate, described metal adsorption layer is formed at described etching barrier layer and deviates from described metal
The side of diffusion impervious layer.The monitoring method of the metallic pollution of the present invention, it is provided that described monitoring wafer, by institute
State monitoring wafer and put into equipment to be monitored, take out after processing, use the first solvent soln and the successively
Two dissolve Ei solution processes, and obtains a monitoring solution, measures the concentration that described monitoring GOLD FROM PLATING SOLUTION belongs to.Described
Metal diffusion barrier layer can avoid metal to be diffused into the inside of Semiconductor substrate, and is mainly limited to described
In metal adsorption layer, thus improve the reliability of metal concentration monitoring.
Accompanying drawing explanation
Fig. 1 is the metal of the monitoring method of metallic pollution distribution signal in the semiconductor substrate in prior art
Figure；
Fig. 2 is the flow chart of preparation monitoring wafer in one embodiment of the invention；
Fig. 3 is the structure chart of the monitoring wafer of the present invention；
Fig. 4 is the flow chart of the monitoring method of metallic pollution in the present invention；
Fig. 5 is metal distribution schematic diagram in metal adsorption layer in the present invention；
Fig. 6 is the structure chart using the first solvent soln to monitor wafer after processing in the present invention.
Detailed description of the invention
Below in conjunction with schematic diagram, the monitoring method of the metallic pollution of the present invention is described in more detail, its
In illustrate the preferred embodiments of the present invention, it should be appreciated that those skilled in the art can revise described here
The present invention, and still realize the advantageous effects of the present invention.Therefore, description below is appreciated that for this
Skilled person's is widely known, and is not intended as limitation of the present invention.
In order to clear, whole features of practical embodiments are not described.In the following description, it is not described in detail public affairs
The function known and structure, because they can make to due to the fact that unnecessary details and chaotic.Will be understood that
In the exploitation of any practical embodiments, it is necessary to make a large amount of implementation detail to realize the specific objective of developer,
Such as according to about system or about the restriction of business, an embodiment change into another embodiment.Separately
Outward, it should think that this development is probably complicated and time-consuming, but for people in the art
It it is only routine work for Yuan.
Referring to the drawings the present invention the most more particularly described below in the following passage.According to following explanation and
Claims, advantages and features of the invention will be apparent from.It should be noted that, accompanying drawing all uses the simplest
The form changed and all use non-ratio accurately, only in order to convenient, aid in illustrating the embodiment of the present invention lucidly
Purpose.
The core concept of the present invention is, it is provided that monitoring wafer and metallic pollution monitoring method in, prison
Survey wafer and include Semiconductor substrate, metal diffusion barrier layer, etching barrier layer and metal adsorption layer, described
Metal diffusion barrier layer is formed at the side of described Semiconductor substrate, and described etching barrier layer is formed at described gold
Belonging to diffusion impervious layer and deviate from the side of described Semiconductor substrate, described metal adsorption layer is formed at described etching resistance
Barrier deviates from the side of described metal diffusion barrier layer.The monitoring method of the metallic pollution of the present invention, it is provided that institute
State monitoring wafer, described monitoring wafer is put into equipment to be monitored, take out after processing, use successively
First solvent soln and second dissolves Ei solution and processes, and obtains a monitoring solution, measures in described monitoring solution
The concentration of metal.Described metal diffusion barrier layer can avoid metal to be diffused into the inside of Semiconductor substrate, and
It is mainly limited in described metal adsorption layer, thus improves the reliability of metal concentration monitoring.
Concrete, in conjunction with above-mentioned core concept, the monitoring wafer that the present invention provides, including Semiconductor substrate,
Metal diffusion barrier layer, etching barrier layer and metal adsorption layer, described metal diffusion barrier layer is formed at institute
Stating the side of Semiconductor substrate, described etching barrier layer is formed at described metal diffusion barrier layer and deviates from described half
The side of conductor substrate, described metal adsorption layer is formed at described etching barrier layer and deviates from the diffusion resistance of described metal
The side of barrier.The flow chart preparing described monitoring wafer refer to Fig. 2, its comprise the steps for:
With reference to shown in Fig. 3, perform step S1, it is provided that semi-conductive substrate 10, described Semiconductor substrate 10
Upper formation one metal etch barrier 20.
In described step S1, it is also preferred that the left described metal barrier 20 is silicon oxide layer, described silicon oxide
The thick end of layer, isThe growth temperature of described silicon oxide layer is 100 DEG C～200 DEG C..At this
In embodiment, described metal diffusion barrier layer 20 is used for preventing metal after high-temperature process, partly leads to described
The diffusion inside of body substrate 10.
Perform step S2, described metal diffusion barrier layer 20 is formed an etching barrier layer 30.
In described step S2, it is also preferred that the left described etching barrier layer 30 is silicon nitride layer, described silicon nitride
The thick end of layer, isIn the present embodiment, described etching barrier layer 30 is used for preventing first molten
When solving solution process, the damage to described metal diffusion barrier layer 20.Described etching barrier layer 30 does not limit
In for silicon nitride layer, it is also possible to for silicon oxynitride layer etc., as long as the material of described etching barrier layer 30 is not by institute
State the first solvent soln to damage, also within the thought range of the present invention.
Perform step S3, described etching barrier layer 30 is formed a metal adsorption layer 40.
In described step S3, it is also preferred that the left described metal adsorption layer 40 is polysilicon layer, described polysilicon
The thick end of layer, isIn the present embodiment, described metal adsorption layer 40 has good gold
Belong to adsorption, metal can be limited therein so that during detection, metal can be detected,
Ensure accuracy and the reliability of testing result.Described metal adsorption layer 400 is not limited to as polysilicon layer,
As long as the material of described metal adsorption layer 40 can preferable adsorbing metal, also the present invention thought range it
In.
As the another side of the present invention, the present invention also provides for the detection method of a metallic pollution, and its flow chart is joined
Examine shown in Fig. 4.Monitoring method specifically can include sub-step S41, S42, S43, S44 and S45.
Carry out step S41, it is provided that described monitoring wafer prepared by above step S1 to step S3.
Carry out step S42, with reference to shown in Fig. 5, described monitoring wafer is put into equipment to be monitored, in institute
State and described monitoring wafer processed in equipment to be monitored, after by described monitoring wafer from described to be monitored
Equipment takes out.It is also preferred that the left the temperature processing described monitoring wafer is 500 DEG C-800 DEG C.Wait described in if to supervise
Survey equipment be contaminated with metals, the most described metal adsorption layer 40 internal adsorption can a certain amount of metal 50, due to institute
Stating the effect of metal diffusion barrier layer 20, metal is mainly limited in described metal adsorption layer 40, and does not has
There is the inside being diffused into described Semiconductor substrate 10.
Carry out step S43, with reference to shown in Fig. 6, use the first solvent soln to process described metal adsorption layer 40,
Described metal adsorption layer 40 reacts with described first solvent soln, forms a thinnest metal adsorption layer 40 '.
In the present embodiment, described metal adsorption layer 40 is polysilicon layer, so, described first solvent soln is hydrogen
Fluoric acid and the mixed solution of hydrogen peroxide, polysilicon described in hydrogen peroxide oxidation forms silicon oxide, and Fluohydric acid. is molten
Liquid reacts and dissolved oxygen SiClx with silicon oxide so that the exposed metal/bare metal in polysilicon is out.Described erosion first
Solvent soln is not limited to the mixed solution for Fluohydric acid. Yu hydrogen peroxide, it is also possible to for potassium hydroxide solution etc.,
As long as described first solvent soln can react with polysilicon, also within the thought range of the present invention.
Carry out step S44, use the second solvent soln to process described Semiconductor substrate 10, obtain dissolved with metal
Monitoring solution 60.In the present embodiment, metal to be detected is metallic copper, described second solvent soln
For nitric acid and the mixed solution of hydrogen peroxide.A part of metal is soluble in nitric acid, and some metal is not
Can be dissolved in nitric acid, can be re-dissolved in after hydrogen peroxide oxidation in nitric acid, therefore, described metal
50 major parts can be dissolved in described monitoring solution 60.Described second solvent soln be not limited to for nitric acid with
The mixed solution of hydrogen peroxide, it is also possible to for the mixed solution etc. of hydrochloric acid Yu hydrogen peroxide, as long as described second
Solvent soln can react with metallic copper, also within the thought range of the present invention.
Carry out step S45, measure the concentration of metal in described monitoring solution 60.Because described metal 50
It is dissolved in described monitoring solution 60, as long as measuring the concentration of metal in described monitoring solution 60, it is possible to
Obtain the situation that equipment to be monitored is contaminated with metals.
In sum, in the monitoring method monitoring wafer and metallic pollution that the present invention provides, wafer is monitored
Including Semiconductor substrate, metal diffusion barrier layer, etching barrier layer and metal adsorption layer, described metal expands
Scattered barrier layer is formed at the side of described Semiconductor substrate, and described etching barrier layer is formed at the diffusion of described metal
Barrier layer deviates from the side of described Semiconductor substrate, and described metal adsorption layer is formed at the described etching barrier layer back of the body
Side from described metal diffusion barrier layer.The monitoring method of the metallic pollution of the present invention, it is provided that described monitoring
Wafer, puts into equipment to be monitored by described monitoring wafer, takes out after processing, and use first is molten successively
Solve solution and second and dissolve the process of Ei solution, obtain a monitoring solution, measure what described monitoring GOLD FROM PLATING SOLUTION belonged to
Concentration.Described metal diffusion barrier layer can avoid metal to be diffused into the inside of Semiconductor substrate, and mainly quilt
It is limited in described metal adsorption layer, thus improves the reliability of metal concentration monitoring.
Obviously, those skilled in the art can carry out various change and modification without deviating from this to the present invention
Bright spirit and scope.So, if the present invention these amendment and modification belong to the claims in the present invention and
Within the scope of its equivalent technologies, then the present invention is also intended to comprise these change and modification.
Claims (12)
1. a monitoring wafer, it is characterised in that including:
Semiconductor substrate；
Metal diffusion barrier layer, is formed at the side of described Semiconductor substrate；
Etching barrier layer, is formed at described metal diffusion barrier layer and deviates from the side of described Semiconductor substrate；And
Metal adsorption layer, is formed at described etching barrier layer and deviates from the side of described metal diffusion barrier layer.
Monitor wafer the most as claimed in claim 1, it is characterised in that described metal diffusion barrier layer is oxygen
SiClx layer.
Monitor wafer the most as claimed in claim 2, it is characterised in that the thickness of described silicon oxide layer is
Monitor wafer the most as claimed in claim 2, it is characterised in that the growth temperature of described silicon oxide layer
It it is 100 DEG C～200 DEG C.
Monitor wafer the most as claimed in claim 1, it is characterised in that described etching barrier layer is silicon nitride
Layer.
Monitor wafer the most as claimed in claim 5, it is characterised in that the thickness of described silicon nitride layer is
Monitor wafer the most as claimed in claim 1, it is characterised in that described metal adsorption layer is polysilicon
Layer.
Monitor wafer the most as claimed in claim 7, it is characterised in that the thickness of described polysilicon layer is
9. the monitoring method of a metallic pollution, it is characterised in that including:
Monitoring wafer as described in any one in claim 1-8 is provided；
Described monitoring wafer is put into equipment to be monitored, takes out after described monitoring wafer is processed；
The first solvent soln is used to process described metal adsorption layer；
The second solvent soln is used to process the described metal adsorption layer processed by described first solvent soln,
To a monitoring solution；And
Measure the concentration of metal in described monitoring solution.
10. the monitoring method of metallic pollution as claimed in claim 9, it is characterised in that described first dissolves
Solution is the mixed solution of Fluohydric acid. and hydrogen peroxide.
The monitoring method of 11. metallic pollutions as claimed in claim 9, it is characterised in that described second dissolves
Solution is the mixed solution of nitric acid and hydrogen peroxide.
The monitoring method of 12. metallic pollutions as claimed in claim 9, it is characterised in that process described monitoring
The temperature of wafer is 500 DEG C-800 DEG C.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510231037.XA CN106206334B (en) | 2015-05-07 | 2015-05-07 | Monitor the monitoring method of wafer and metallic pollution |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510231037.XA CN106206334B (en) | 2015-05-07 | 2015-05-07 | Monitor the monitoring method of wafer and metallic pollution |
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| CN106206334A true CN106206334A (en) | 2016-12-07 |
| CN106206334B CN106206334B (en) | 2019-01-22 |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080216871A1 (en) * | 2007-03-09 | 2008-09-11 | Tokyo Electron Limited | Method and system for monitoring contamination on a substrate |
| CN101419911A (en) * | 2007-10-26 | 2009-04-29 | 硅绝缘体技术有限公司 | Substrats SOI avec couche fine isolante enterree |
| JP2010212451A (en) * | 2009-03-10 | 2010-09-24 | Sumco Corp | Method for evaluating metal contamination on surface layer of semiconductor substrate |
| CN102687260A (en) * | 2009-12-23 | 2012-09-19 | Memc电子材料有限公司 | Method for monitoring the amount of contamination imparted into semiconductor wafers during wafer processing |
-
2015
- 2015-05-07 CN CN201510231037.XA patent/CN106206334B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080216871A1 (en) * | 2007-03-09 | 2008-09-11 | Tokyo Electron Limited | Method and system for monitoring contamination on a substrate |
| CN101419911A (en) * | 2007-10-26 | 2009-04-29 | 硅绝缘体技术有限公司 | Substrats SOI avec couche fine isolante enterree |
| JP2010212451A (en) * | 2009-03-10 | 2010-09-24 | Sumco Corp | Method for evaluating metal contamination on surface layer of semiconductor substrate |
| CN102687260A (en) * | 2009-12-23 | 2012-09-19 | Memc电子材料有限公司 | Method for monitoring the amount of contamination imparted into semiconductor wafers during wafer processing |
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| CN106206334B (en) | 2019-01-22 |
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