CN106206334B - Monitor the monitoring method of wafer and metallic pollution - Google Patents
Monitor the monitoring method of wafer and metallic pollution Download PDFInfo
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- CN106206334B CN106206334B CN201510231037.XA CN201510231037A CN106206334B CN 106206334 B CN106206334 B CN 106206334B CN 201510231037 A CN201510231037 A CN 201510231037A CN 106206334 B CN106206334 B CN 106206334B
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Abstract
In the monitoring method of monitoring wafer and metallic pollution of the invention, monitoring wafer includes semiconductor substrate, metal diffusion barrier layer, etching barrier layer and metal adsorption layer, the metal diffusion barrier layer is formed in the side of the semiconductor substrate, the etching barrier layer is formed in the side that the metal diffusion barrier layer deviates from the semiconductor substrate, and the metal adsorption layer is formed in the side that the etching barrier layer deviates from the metal diffusion barrier layer.The monitoring method of metallic pollution of the invention provides the monitoring wafer, and the monitoring wafer is put into equipment to be monitored, it is taken out after being handled, it is successively handled using the first solvent soln and the second dissolution Ei solution, obtains a monitoring solution, measure the concentration that the monitoring GOLD FROM PLATING SOLUTION belongs to.The metal diffusion barrier layer can be diffused into the inside of semiconductor substrate to avoid metal, and be mainly limited in the metal adsorption layer, to improve the reliability of metal concentration monitoring.
Description
Technical field
The present invention relates to technical field of semiconductors more particularly to the monitoring methods of a kind of monitoring wafer and metallic pollution.
Background technique
In semiconductor processes, there can be metal pollutant in production equipment, so that the quality of production product is influenced,
Therefore, most important for the monitoring of metallic pollution.Moreover, being gradually reduced with semiconductor technology line width, metallic pollution
Monitoring seems even more important.In the monitoring method of existing metallic pollution, refering to what is shown in Fig. 1, being carried out using semiconductor substrate 10
Detection, since the surface of the semiconductor substrate 10 is defect exhaustion region, by Devices to test high temperature processing after, surface
Metal 50 can quickly be spread to the defect enrichment region inside the semiconductor substrate 10 rapidly, in the semiconductor substrate 10
The distribution of metal 50 is as shown in Figure 1, however, the metal inside the semiconductor substrate 10 is difficult to monitor, therefore, existing gold
The metal concentration for belonging to the monitoring method detection of pollution is less than actual concentrations, it cannot be guaranteed that the accuracy of detection.
Summary of the invention
The object of the present invention is to provide a kind of monitoring wafer and the monitoring method structures of metallic pollution, can be avoided gold
Belong to the inside for being diffused into semiconductor substrate, to improve the reliability of monitoring.
In order to solve the above technical problems, the present invention provides a kind of monitoring wafer characterized by comprising
Semiconductor substrate；
Metal diffusion barrier layer is formed in the side of the semiconductor substrate；
Etching barrier layer is formed in the side that the metal diffusion barrier layer deviates from the semiconductor substrate；And
Metal adsorption layer is formed in the side that the etching barrier layer deviates from the metal diffusion barrier layer.
Optionally, the metal diffusion barrier layer is silicon oxide layer.
Optionally, the silicon oxide layer with a thickness of
Optionally, the growth temperature of the silicon oxide layer is 100 DEG C~200 DEG C.
Optionally, the etching barrier layer is silicon nitride layer.
Optionally, the silicon nitride layer with a thickness of
Optionally, the metal adsorption layer is polysilicon layer.
Optionally, the polysilicon layer with a thickness of
Optionally, the specific steps of the concentration of the metal in the metal adsorption layer are monitored are as follows:
As another side of the invention, the present invention also provides a kind of monitoring methods of metallic pollution, comprising:
Above-described monitoring wafer is provided；
The monitoring wafer is put into equipment to be monitored, is taken out after handling the monitoring wafer；
The metal adsorption layer is handled using the first solvent soln；
It is handled using the second solvent soln by the processed metal adsorption layer of first solvent soln, obtains a prison
Survey solution；And
Measure the concentration of the metal in the monitoring solution.
Optionally, first solvent soln is the mixed solution of hydrofluoric acid and hydrogen peroxide.
Optionally, second solvent soln is the mixed solution of nitric acid and hydrogen peroxide.
Optionally, the temperature for handling the monitoring wafer is 500 DEG C -800 DEG C.
Compared with prior art, the monitoring method of metallic pollution provided by the invention has the advantage that
It is provided by the invention monitoring wafer and metallic pollution monitoring method in, monitoring wafer include semiconductor substrate,
Metal diffusion barrier layer, etching barrier layer and metal adsorption layer, the metal diffusion barrier layer are formed in the semiconductor lining
The side at bottom, the etching barrier layer is formed in the side that the metal diffusion barrier layer deviates from the semiconductor substrate, described
Metal adsorption layer is formed in the side that the etching barrier layer deviates from the metal diffusion barrier layer.Metallic pollution of the invention
Monitoring method provides the monitoring wafer, and the monitoring wafer is put into equipment to be monitored, is taken out after being handled, successively
It is handled using the first solvent soln and the second dissolution Ei solution, obtains a monitoring solution, measure what the monitoring GOLD FROM PLATING SOLUTION belonged to
Concentration.The metal diffusion barrier layer can be diffused into the inside of semiconductor substrate to avoid metal, and be mainly limited to described
In metal adsorption layer, to improve the reliability of metal concentration monitoring.
Detailed description of the invention
Fig. 1 is the distribution schematic diagram of the metal of the monitoring method of metallic pollution in the prior art in the semiconductor substrate；
Fig. 2 is the flow chart of preparation monitoring wafer in one embodiment of the invention；
Fig. 3 is the structure chart of monitoring wafer of the invention；
Fig. 4 is the flow chart of the monitoring method of metallic pollution in the present invention；
Fig. 5 is distribution schematic diagram of the metal in metal adsorption layer in the present invention；
Fig. 6 is in the present invention using the structure chart for monitoring wafer after the processing of the first solvent soln.
Specific embodiment
It is described in more detail below in conjunction with monitoring method of the schematic diagram to metallic pollution of the invention, wherein indicating
The preferred embodiment of the present invention, it should be appreciated that those skilled in the art can modify invention described herein, and still real
Existing advantageous effects of the invention.Therefore, following description should be understood as the widely known of those skilled in the art, and simultaneously
Not as limitation of the present invention.
For clarity, not describing whole features of practical embodiments.In the following description, it is not described in detail well known function
And structure, because they can make the present invention chaotic due to unnecessary details.It will be understood that opening in any practical embodiments
In hair, it is necessary to make a large amount of implementation details to realize the specific objective of developer, such as according to related system or related business
Limitation, changes into another embodiment by one embodiment.Additionally, it should think that this development may be complicated and expend
Time, but to those skilled in the art it is only routine work.
The present invention is more specifically described by way of example referring to attached drawing in the following passage.It is wanted according to following explanation and right
Book is sought, advantages and features of the invention will become apparent from.It should be noted that attached drawing is all made of very simplified form and using non-
Accurately ratio, only for the purpose of facilitating and clarifying the purpose of the embodiments of the invention.
Core of the invention thought is, in the monitoring method of the monitoring wafer provided and metallic pollution, monitors wafer
Including semiconductor substrate, metal diffusion barrier layer, etching barrier layer and metal adsorption layer, the metal diffusion barrier layer is formed
In the side of the semiconductor substrate, the etching barrier layer is formed in the metal diffusion barrier layer and serves as a contrast away from the semiconductor
The side at bottom, the metal adsorption layer are formed in the side that the etching barrier layer deviates from the metal diffusion barrier layer.This hair
The monitoring method of bright metallic pollution provides the monitoring wafer, and the monitoring wafer is put into equipment to be monitored, is located
It is taken out after reason, is successively handled using the first solvent soln and the second dissolution Ei solution, obtain a monitoring solution, measure the monitoring
The concentration that GOLD FROM PLATING SOLUTION belongs to.The metal diffusion barrier layer can be diffused into the inside of semiconductor substrate to avoid metal, and main
It is limited in the metal adsorption layer, to improve the reliability of metal concentration monitoring.
Specifically, in conjunction with above-mentioned core concept, monitoring wafer provided by the invention, including the diffusion of semiconductor substrate, metal
Barrier layer, etching barrier layer and metal adsorption layer, the metal diffusion barrier layer are formed in the side of the semiconductor substrate,
The etching barrier layer is formed in the side that the metal diffusion barrier layer deviates from the semiconductor substrate, the metal adsorption layer
It is formed in the side that the etching barrier layer deviates from the metal diffusion barrier layer.The flow chart for preparing the monitoring wafer please join
Examine Fig. 2 comprising following steps are as follows:
Refering to what is shown in Fig. 3, executing step S1, semi-conductive substrate 10 is provided, forms a gold medal in the semiconductor substrate 10
Belong to etching barrier layer 20.
In the step S1, preferably, the metal barrier 20 is silicon oxide layer, the thick bottom of the silicon oxide layer isThe growth temperature of the silicon oxide layer is 100 DEG C~200 DEG C.In the present embodiment, the metal expands
Barrier layer 20 is dissipated for preventing metal after high-temperature process, is spread to the inside of the semiconductor substrate 10.
Step S2 is executed, forms an etching barrier layer 30 on the metal diffusion barrier layer 20.
In the step S2, preferably, the etching barrier layer 30 is silicon nitride layer, the thick bottom of the silicon nitride layer isIn the present embodiment, when the etching barrier layer 30 is for preventing the first solvent soln from handling, to described
The damage of metal diffusion barrier layer 20.The etching barrier layer 30 is not limited to as silicon nitride layer, can also be silicon oxynitride layer
Deng, if the material of the etching barrier layer 30 not by first solvent soln damage, also thought range of the invention it
It is interior.
Step S3 is executed, forms a metal adsorption layer 40 on the etching barrier layer 30.
In the step S3, preferably, the metal adsorption layer 40 is polysilicon layer, the thick bottom of the polysilicon layer isIn the present embodiment, the metal adsorption layer 40 has good metal adsorption effect, can will be golden
Belong to limitation inside it, so that metal can be detected in detection process, guarantees the accuracy and reliability of testing result.
The metal adsorption layer 400 is not limited to as polysilicon layer, as long as the material of the metal adsorption layer 40 can be adsorbed preferably
Metal, also within thought range of the invention.
As another side of the invention, the present invention also provides the detection method of a metallic pollution, flow chart refers to Fig. 4 institute
Show.Monitoring method can specifically include sub-step S41, S42, S43, S44 and S45.
Step S41 is carried out, above step S1 to the step S3 monitoring wafer prepared is provided.
Step S42 is carried out, refering to what is shown in Fig. 5, the monitoring wafer is put into equipment to be monitored, described to be monitored
Equipment in the monitoring wafer is handled, after the monitoring wafer is taken out from the equipment to be monitored.Preferably,
The temperature for handling the monitoring wafer is 500 DEG C -800 DEG C.If the equipment to be monitored is contaminated with metals, the metal
40 interior suction of adsorption layer is drawn wrong conclusions by false analogy a certain amount of metal 50, and due to the effect of the metal diffusion barrier layer 20, metal is mainly limited
Inside in the metal adsorption layer 40, without being diffused into the semiconductor substrate 10.
Step S43 is carried out, refering to what is shown in Fig. 6, handling the metal adsorption layer 40, the metal using the first solvent soln
Adsorption layer 40 is reacted with first solvent soln, forms a very thin metal adsorption layer 40 '.In the present embodiment, the gold
Category adsorption layer 40 is polysilicon layer, so, first solvent soln is the mixed solution of hydrofluoric acid and hydrogen peroxide, peroxidating
Polysilicon described in hydroxide forms silica, hydrofluoric acid solution and oxidation pasc reaction and dissolves silica, so that in polysilicon
Exposed metal/bare metal come out.The first solvent soln of the erosion is not limited to the mixed solution for hydrofluoric acid and hydrogen peroxide, can be with
For potassium hydroxide solution etc., if first solvent soln can with polycrystalline pasc reaction, also thought range of the invention it
It is interior.
Step S44 is carried out, handles the semiconductor substrate 10 using the second solvent soln, the monitoring obtained dissolved with metal is molten
Liquid 60.In the present embodiment, metal to be detected is metallic copper, and second solvent soln is the mixed of nitric acid and hydrogen peroxide
Close solution.A part of metal is soluble in nitric acid, and some metals cannot be dissolved in nitric acid, can be by peroxidating hydrogen-oxygen
It is re-dissolved in nitric acid after changing, therefore, the metal 50 is most of can be dissolved in the monitoring solution 60.Described second
Solvent soln is not limited to the mixed solution for nitric acid and hydrogen peroxide, can also be the mixed solution of hydrochloric acid and hydrogen peroxide
Deng as long as second solvent soln can be reacted with metallic copper, also within thought range of the invention.
Step S45 is carried out, the concentration of the metal in the monitoring solution 60 is measured.Because the metal 50 is dissolved in described
It monitors in solution 60, as long as the measurement concentration for monitoring metal in solution 60, so that it may obtain equipment to be monitored by metal
The case where pollution.
In conclusion monitoring wafer includes half in the monitoring method of monitoring wafer provided by the invention and metallic pollution
Conductor substrate, metal diffusion barrier layer, etching barrier layer and metal adsorption layer, the metal diffusion barrier layer are formed in described
The side of semiconductor substrate, the etching barrier layer are formed in one that the metal diffusion barrier layer deviates from the semiconductor substrate
Side, the metal adsorption layer are formed in the side that the etching barrier layer deviates from the metal diffusion barrier layer.Gold of the invention
The monitoring method for belonging to pollution, provides the monitoring wafer, the monitoring wafer is put into equipment to be monitored, is taken after being handled
Out, it is successively handled using the first solvent soln and the second dissolution Ei solution, obtains a monitoring solution, measure in the monitoring solution
The concentration of metal.The metal diffusion barrier layer can be diffused into the inside of semiconductor substrate to avoid metal, and mainly be limited
In the metal adsorption layer, to improve the reliability of metal concentration monitoring.
Obviously, various changes and modifications can be made to the invention without departing from essence of the invention by those skilled in the art
Mind and range.In this way, if these modifications and changes of the present invention belongs to the range of the claims in the present invention and its equivalent technologies
Within, then the present invention is also intended to include these modifications and variations.
Claims (12)
1. a kind of monitoring wafer characterized by comprising
Semiconductor substrate；
Metal diffusion barrier layer is formed in the side of the semiconductor substrate, diffuses to the semiconductor lining for barrier metal
In bottom；
Etching barrier layer is formed in the side that the metal diffusion barrier layer deviates from the semiconductor substrate, for stopping dissolution
Solution corrodes the metal diffusion barrier layer；And
Metal adsorption layer is formed in the side that the etching barrier layer deviates from the metal diffusion barrier layer, is used for adsorbing metal.
2. monitoring wafer as described in claim 1, which is characterized in that the metal diffusion barrier layer is silicon oxide layer.
3. as claimed in claim 2 monitoring wafer, which is characterized in that the silicon oxide layer with a thickness of
4. monitoring wafer as claimed in claim 2, which is characterized in that the growth temperature of the silicon oxide layer is 100 DEG C~200
℃。
5. monitoring wafer as described in claim 1, which is characterized in that the etching barrier layer is silicon nitride layer.
6. as claimed in claim 5 monitoring wafer, which is characterized in that the silicon nitride layer with a thickness of
7. monitoring wafer as described in claim 1, which is characterized in that the metal adsorption layer is polysilicon layer.
8. as claimed in claim 7 monitoring wafer, which is characterized in that the polysilicon layer with a thickness of
9. a kind of monitoring method of metallic pollution characterized by comprising
Monitoring wafer as described in any one of claim 1-8 is provided；
The monitoring wafer is put into equipment to be monitored, is taken out after handling the monitoring wafer；
The metal adsorption layer is handled using the first solvent soln；
It is handled using the second solvent soln by the processed metal adsorption layer of first solvent soln, it is molten to obtain a monitoring
Liquid；And
Measure the concentration of the metal in the monitoring solution.
10. the monitoring method of metallic pollution as claimed in claim 9, which is characterized in that first solvent soln is hydrogen fluorine
The mixed solution of acid and hydrogen peroxide.
11. the monitoring method of metallic pollution as claimed in claim 9, which is characterized in that second solvent soln is nitric acid
With the mixed solution of hydrogen peroxide.
12. the monitoring method of metallic pollution as claimed in claim 9, which is characterized in that the temperature of the processing monitoring wafer
It is 500 DEG C -800 DEG C.
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| CN201510231037.XA CN106206334B (en) | 2015-05-07 | 2015-05-07 | Monitor the monitoring method of wafer and metallic pollution |
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| CN106206334B true CN106206334B (en) | 2019-01-22 |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101419911A (en) * | 2007-10-26 | 2009-04-29 | 硅绝缘体技术有限公司 | Substrats SOI avec couche fine isolante enterree |
| CN102687260A (en) * | 2009-12-23 | 2012-09-19 | Memc电子材料有限公司 | Method for monitoring the amount of contamination imparted into semiconductor wafers during wafer processing |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8083862B2 (en) * | 2007-03-09 | 2011-12-27 | Tokyo Electron Limited | Method and system for monitoring contamination on a substrate |
| JP2010212451A (en) * | 2009-03-10 | 2010-09-24 | Sumco Corp | Method for evaluating metal contamination on surface layer of semiconductor substrate |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101419911A (en) * | 2007-10-26 | 2009-04-29 | 硅绝缘体技术有限公司 | Substrats SOI avec couche fine isolante enterree |
| CN102687260A (en) * | 2009-12-23 | 2012-09-19 | Memc电子材料有限公司 | Method for monitoring the amount of contamination imparted into semiconductor wafers during wafer processing |
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