CN106197708B - Fully integrated temperature sensor for extremely low power dissipation micro-system - Google Patents
Fully integrated temperature sensor for extremely low power dissipation micro-system Download PDFInfo
- Publication number
- CN106197708B CN106197708B CN201610559867.XA CN201610559867A CN106197708B CN 106197708 B CN106197708 B CN 106197708B CN 201610559867 A CN201610559867 A CN 201610559867A CN 106197708 B CN106197708 B CN 106197708B
- Authority
- CN
- China
- Prior art keywords
- voltage
- frequency converter
- temperature
- temperature inductor
- variation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Semiconductor Integrated Circuits (AREA)
- Measuring Temperature Or Quantity Of Heat (AREA)
Abstract
The present invention relates to a kind of fully integrated temperature sensors for extremely low power dissipation micro-system, temperature sensor is made of temperature inductor, voltage to frequency converter and digital frequency converter successively, temperature inductor converts the variation of ambient temperature to the variation of output voltage, and pass to voltage to frequency converter, voltage to frequency converter converts temperature inductor output voltage to the square wave of hunting of frequency, and digital frequency converter is passed to, digital frequency converter converts the square waveform to binary-coded digit signal and exports.When ambient temperature generates variation, the conducting resistance of two N-channel field effect transistors in temperature inductor generates variation, and temperature inductor input voltage is caused to change.The square wave frequency that the variation of temperature inductor input voltage causes voltage to frequency converter to export changes.Finally, the binary-coded digit signal exported by digital frequency converter changes.It can realize the power consumption less than 100nW, be suitble to extremely low power dissipation application scenario.
Description
Technical field
The present invention relates to a kind of temperature sensor, more particularly to a kind of fully integrated temperature for extremely low power dissipation micro-system passes
Sensor.
Background technology
Traditional temperature sensor is generally made of thermally sensitive voltage source, triode and resistance, temperature sensitive
Voltage source is connected with the base stage of triode.When ambient temperature changes, temperature-sensitive voltage source voltage generates variation.Due to
Voltage source is connected with the base stage of triode, so triode on resistance will be changed by generating the voltage value of minor change, to change
The current value for flowing through resistance is become.
In this approach, the power consumption of temperature sensor is influenced by resistance.Resistance value is bigger, temperature sensor
Power consumption is lower.But resistance value is limited by chip area and is difficult to realize high impedance.(it is less than requiring extremely low power dissipation
In application environment 100nW), this method often due to the limitation of chip area and be difficult to realize.
Invention content
The problem of cannot meeting low-power consumption requirement the present invention be directed to conventional temperature sensor, it is proposed that one kind is for extremely low
The fully integrated temperature sensor of power consumption micro-system, under chip area limited situation, as a result of two different temperature coefficients
N-channel field effect transistor replace traditional resistor, can realize the power consumption less than 100nW, be more suitable for extremely low power dissipation applied field
It closes.
The technical scheme is that：A kind of fully integrated temperature sensor for extremely low power dissipation micro-system, temperature sensing
Device is made of temperature inductor, voltage to frequency converter and digital frequency converter successively, and the temperature inductor will be extraneous
The variation of temperature is converted into the variation of output voltage, and passes to voltage to frequency converter, and voltage to frequency converter is by temperature sense
It answers device output voltage to be converted into the square wave of hunting of frequency, and passes to digital frequency converter, digital frequency converter is by the party
Waveform is converted into the output of binary-coded digit signal.
The temperature inductor is by a N-channel field-effect tube M1 with negative temperature coefficient with another with positive temperature
The N-channel field-effect tube M2 compositions of coefficient, the drain electrode of M1 are connected with the voltage source Vdd of temperature inductor, source electrode and the temperature of M2
The 0 voltage Vss for spending inductor is connected；The grid of M1, the grid of M2, the source electrode of M1 are connected with the drain electrode of M2, and the point electricity that is connected
Press the output voltage V as temperature inductorsense。
The frequency digital quantizer includes two groups of asynchronous counters and two groups of timing generation circuits, and PTAT sequential generates electricity
Road and after receiving commencing signal with reference to timing generation circuit, generated under two groups of independent oscillating circuits PTAT clock signals with
CLK refers to clock signal, and the frequency waveform that voltage to frequency converter exports is converted to binary digit by PTAT counters
Temperature signal simultaneously exports, and voltage to frequency converter is exported the completion signal that conversion terminates with reference to sequential counter.
The beneficial effects of the present invention are：The present invention is used for the fully integrated temperature sensor of extremely low power dissipation micro-system, when outer
When boundary's temperature generates variation, the conducting resistance of two N-channel field effect transistors in temperature inductor generates variation, leads to temperature
Spend the variation of inductor input voltage.The variation of temperature inductor input voltage leads to the square wave frequency hair that voltage to frequency converter exports
Changing.Finally, the binary-coded digit signal exported by digital frequency converter changes.It can realize and be less than
The power consumption of 100nW is suitble to extremely low power dissipation application scenario.
Description of the drawings
Fig. 1 is the fully integrated arrangement of temperature sensor schematic diagram that the present invention is used for extremely low power dissipation micro-system；
Fig. 2 is temperature inductor structure chart of the present invention；
Fig. 3 is voltage to frequency converter structure chart of the present invention；
Fig. 4 is frequency number converter structure figure of the present invention.
Specific implementation mode
As shown in Figure 1 be used for extremely low power dissipation micro-system fully integrated arrangement of temperature sensor schematic diagram, temperature sensor according to
It is secondary to be made of temperature inductor 1, voltage to frequency converter 2 and digital frequency converter 3.The temperature inductor 1 will be outer
The variation of boundary's temperature is converted into the variation of output voltage, and passes to the voltage to frequency converter 2, voltage to frequency converter
2 convert with the square wave of a certain hunting of frequency 1 output voltage of temperature inductor to, and pass to digital frequency converter 3, number
Frequency converter 3 converts the waveform to the output of binary-coded digit signal.
Temperature inductor structure chart as shown in Figure 2, temperature inductor 1 are imitated by a N-channel field with negative temperature coefficient
It should pipe M1 (21) and another N-channel field-effect tube M2 (22) composition with positive temperature coefficient.The drain electrode of M1 and temperature sense
The voltage source Vdd of device is answered to be connected, the source electrode of M2 is connected with 0 voltage Vss of temperature inductor.The grid of M1, the grid of M2, M1
Source electrode is connected with the drain electrode of M2, and output voltage V of the point voltage as temperature inductor that be connectedsense.Due to field-effect tube M1
(21) different from the temperature coefficient of field-effect tube M2 (22), when ambient temperature changes, the voltage value of voltage output (23)
It can change.Output voltage VsenseSignal is sent into voltage to frequency converter 2, and voltage to frequency converter 2 is by voltage output (23)
Voltage value be converted to square wave.Fig. 2 is the temperature inductor structure chart of level-one oscillating circuit, can be according to setting in actual design
Meter requires what oscillating circuit of design to form temperature inductor, ensures the required accuracy and cooperation voltage to frequency converter conversion frequency
Rate.
Voltage to frequency converter structure chart as shown in Figure 3, voltage to frequency converter 2 may be used but be not limited to shown in Fig. 3
Structure.Voltage to frequency converter 2 vibrates (M3, M4) series connection group by a transmission gate circuit (M5, M6) and a single-stage in Fig. 3
At temperature inductor output voltage is input to transmission gate circuit, and voltage to frequency converter 2 converts temperature inductor output voltage
For with the square wave of a certain hunting of frequency.The frequency for exporting square wave in circuit structure shown in Fig. 3 and oscillation in temperature inductor
The relationship of device series N and every grade of delay time td is：
Wherein, N is temperature inductor internal oscillator series；Td is every grade of delay time of temperature inductor internal oscillator；gM
For the mutual conductance of every grade of phase inverter of temperature inductor internal oscillator；CGGate capacitance is inputted for temperature inductor internal oscillator；RTGFor electricity
Voltage-frequency rate converter transmits gate resistor；ITGGate current is transmitted for voltage to frequency converter；foscRepresent output square wave frequency.Square wave
The formula proving method of frequency is to be repeated no more known in industry.
Frequency number converter structure figure as shown in Figure 4, frequency digital quantizer 3 may be used but be not limited to shown in Fig. 4
Structure.There are two groups of asynchronous counters and two groups of timing generation circuits in Fig. 4, PTAT timing generation circuits (41) and refers to sequential
After generative circuit (42) receives commencing signal, PTAT clock signals clk is generated under two groups of independent oscillating circuitsPTATWith CLK
With reference to clock signal clkREF.By PTAT counters (43) by the frequency waveform that voltage to frequency converter 2 exports be converted into two into
Digital temperature signal processed simultaneously exports, and voltage to frequency converter 2, which is exported the completion that conversion terminates, with reference to sequential counter (44) believes
Number.
Claims (2)
1. a kind of fully integrated temperature sensor for extremely low power dissipation micro-system, temperature sensor is successively by temperature inductor, electricity
Voltage-frequency rate converter and digital frequency converter composition, the temperature inductor convert the variation of ambient temperature to output electricity
The variation of pressure, and voltage to frequency converter is passed to, voltage to frequency converter converts temperature inductor output voltage to frequency
The square wave of oscillation, and digital frequency converter is passed to, digital frequency converter converts the square waveform to binary-coded
Digital signal exports；It is characterized in that, the temperature inductor by one with negative temperature coefficient N-channel field-effect tube M1 and
Another N-channel field-effect tube M2 composition with positive temperature coefficient, the drain electrode of M1 and the voltage source Vdd phases of temperature inductor
Even, the source electrode of M2 is connected with 0 voltage Vss of temperature inductor；The grid of M1, the grid of M2, M1 source electrode and M2 drain electrode phase
Connect, and output voltage V of the point voltage as temperature inductor that be connectedsense。
2. being used for the fully integrated temperature sensor of extremely low power dissipation micro-system according to claim 1, which is characterized in that the number
Word frequency converter includes two groups of asynchronous counters and two groups of timing generation circuits, and PTAT timing generation circuits and reference sequential are given birth to
After receiving commencing signal at circuit, PTAT clock signals are generated under two groups of independent oscillating circuits and refer to clock signal with CLK,
It converts the frequency waveform that voltage to frequency converter exports to binary digit temperature signal by PTAT counters and export, joins
Examine the completion signal that voltage to frequency converter output is converted to end by sequential counter.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610559867.XA CN106197708B (en) | 2016-07-15 | 2016-07-15 | Fully integrated temperature sensor for extremely low power dissipation micro-system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610559867.XA CN106197708B (en) | 2016-07-15 | 2016-07-15 | Fully integrated temperature sensor for extremely low power dissipation micro-system |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106197708A CN106197708A (en) | 2016-12-07 |
| CN106197708B true CN106197708B (en) | 2018-11-13 |
Family
ID=57474928
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610559867.XA Active CN106197708B (en) | 2016-07-15 | 2016-07-15 | Fully integrated temperature sensor for extremely low power dissipation micro-system |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106197708B (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018189083A1 (en) * | 2017-04-11 | 2018-10-18 | Philips Lighting Holding B.V. | Thermal detection system and method |
| CN108225588B (en) * | 2017-12-29 | 2020-01-07 | 芯原微电子(上海)股份有限公司 | Temperature sensor and temperature detection method |
| CN109883561A (en) * | 2018-12-20 | 2019-06-14 | 佛山臻智微芯科技有限公司 | A kind of digital temperature sensor circuit structure of low-power consumption being easily integrated |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101846556A (en) * | 2010-04-14 | 2010-09-29 | 广州市广晟微电子有限公司 | Totally integrated digital temperature sensor |
| CN102338669A (en) * | 2010-05-27 | 2012-02-01 | 香港科技大学 | Low voltage low power CMOS temperature sensor circuit |
| CN105352627A (en) * | 2015-09-18 | 2016-02-24 | 华帝股份有限公司 | Temperature detection system and detection method thereof |
| CN105784156A (en) * | 2016-05-19 | 2016-07-20 | 电子科技大学 | Integrated temperature sensor |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7630267B2 (en) * | 2007-10-31 | 2009-12-08 | Elite Semiconductor Memory Technology Inc. | Temperature detector in an integrated circuit |
-
2016
- 2016-07-15 CN CN201610559867.XA patent/CN106197708B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101846556A (en) * | 2010-04-14 | 2010-09-29 | 广州市广晟微电子有限公司 | Totally integrated digital temperature sensor |
| CN102338669A (en) * | 2010-05-27 | 2012-02-01 | 香港科技大学 | Low voltage low power CMOS temperature sensor circuit |
| CN105352627A (en) * | 2015-09-18 | 2016-02-24 | 华帝股份有限公司 | Temperature detection system and detection method thereof |
| CN105784156A (en) * | 2016-05-19 | 2016-07-20 | 电子科技大学 | Integrated temperature sensor |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106197708A (en) | 2016-12-07 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106197708B (en) | Fully integrated temperature sensor for extremely low power dissipation micro-system | |
| Law et al. | A Sub-$\mu $ W Embedded CMOS Temperature Sensor for RFID Food Monitoring Application | |
| Tripathi et al. | A review on power supply induced jitter | |
| TWI421478B (en) | Apparatus and method for sensing temperature | |
| CN105628243B (en) | A kind of resistor-type temperature sensing chip | |
| CN106768437B (en) | Temperature detection system and method | |
| CN104833437B (en) | Pulse width signal generation circuit applied to digital CMOS temperature sensor | |
| CN104807561A (en) | Calibrating circuit and calibrating method for resistance-type temperature sensing chip | |
| CN104165702A (en) | Multi-point temperature sensing method and system suitable for integrated circuit chip | |
| CN109060162A (en) | temperature sensor | |
| CN101237226A (en) | Oscillator | |
| CN204405208U (en) | A kind of temperature sensor | |
| Alam et al. | Design of capacitance to voltage converter for capacitive sensor transducer | |
| CN107317567A (en) | The RC oscillating circuits of low-temperature coefficient output frequency | |
| US9683903B2 (en) | Voltage and temperature sensor for a serializer/deserializer communication application | |
| CN205584150U (en) | Low temperature coefficient output frequence's RC oscillation circuit | |
| Morales et al. | Design and evaluation of an all-digital programmable delay line in 130-nm CMOS | |
| CN203747798U (en) | Sampling switch circuit | |
| CN203643886U (en) | Band-gap reference source circuit and band-gap reference source | |
| CN103762985B (en) | Sampling hold circuit | |
| CN107066018B (en) | A kind of accurate por circuit | |
| CN113008410B (en) | Temperature sensor for integrated circuit | |
| De Smedt et al. | A 40nm-CMOS, 18 μW, temperature and supply voltage independent sensor interface for RFID tags | |
| Hedayatipour et al. | Quasi-Digital Output Low Power CMOS Temperature Sensor | |
| JPS59501810A (en) | Device that converts analog format signals to pulse format signals |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |