CN109883561A - A kind of digital temperature sensor circuit structure of low-power consumption being easily integrated - Google Patents
A kind of digital temperature sensor circuit structure of low-power consumption being easily integrated Download PDFInfo
- Publication number
- CN109883561A CN109883561A CN201811564574.6A CN201811564574A CN109883561A CN 109883561 A CN109883561 A CN 109883561A CN 201811564574 A CN201811564574 A CN 201811564574A CN 109883561 A CN109883561 A CN 109883561A
- Authority
- CN
- China
- Prior art keywords
- low
- power consumption
- temperature sensor
- circuit structure
- sensor circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Measuring Temperature Or Quantity Of Heat (AREA)
Abstract
The present invention proposes the digital temperature sensor circuit structure of a kind of low-power consumption being easily integrated, it is therefore intended that proposes a kind of smallerization, more low-power consumption, it is easier to integrated a temperature sensor circuit structure.It is made of temperature sensing circuit, voltage conversion circuit, digital display circuit three parts.Bias voltage is provided by two pmos series connection, the tube of current made works in subthreshold region.The size of electric current is then converted by the phase inverter of different threshold values the pulse width of PW, finally by the combination of clock signal and counter, PW pulse width is converted into digital signal.
Description
Technical field
The present invention relates to radio-frequency power amplifier fields, especially a kind of to improve the defeated of radio-frequency power amplifier harmonic performance
Match circuit structure out.
Background technique
In recent years, integrated circuit develops rapidly, IC manufacturing level is constantly progressive, so that more and more functions
Module can be integrated on same chip.These integrated circuits continued to introduce new are promoting the reduction of product use cost
Meanwhile also improving the portability of product.Component number however as unit chip in product is more and more, the hair of chip
Heat is also increasing, increases the hidden danger that device performance degeneration even fails, and has thus caused people and has monitored to chip temperature
With the concern of management.Although discrete temperature sensor can help the measurement and control of people's realization temperature, biggish volume
And incompatible characteristic be applied to it can not in the occasion with ic manufacturing process.In addition, the appearance of wearable device,
So that not only cheap but also portable temperature sensor becomes the object of everybody's favor.Exactly such as above-mentioned demand, motivates people
Research and develop the temperature sensor of miniaturization integrated temperature sensor one by one.
But traditional temperature sensing circuit structure largely utilizes the positive and negative temperature drift principle of triode to complete, not only power consumption
Larger, component number is also more, is not easy to integration and miniaturization.
Summary of the invention
The present invention proposes the digital temperature sensor circuit structure of a kind of low-power consumption being easily integrated, it is therefore intended that proposes one
Kind smallerization, more low-power consumption, it is easier to integrated a temperature sensor circuit structure.
Detailed description of the invention
Present invention will be further explained below with reference to the attached drawings and examples.
Fig. 1 is temperature detection and voltage conversion circuit.
Fig. 2 is digital display circuit.
Specific embodiment
The present invention proposes the digital temperature sensor circuit structure of a kind of low-power consumption being easily integrated, and the circuit includes base
In the temperature sensing circuit of mos pipe, voltage-pulse conversion circuit, digitizer.
The temperature sensing circuit is made of two series connection pmos pipes and a switch pmos pipe.
The voltage conversion circuit is managed by a switch mos, and a capacitor, the different phase inverter of two threshold values, two general
Logical phase inverter, a latch are constituted.
The digital display circuit is made of one and door, a counter.
It is described in detail below with reference to implementing circuit figure.
As shown in Figure 1 and Figure 2, the circuit structure is by temperature sensing circuit, voltage conversion circuit, digital display circuit three
Part forms.
When clock signal Vosc is low, electric current passes through nmos pipe inflow surface, and circuit does not work.
When clock signal Vosc is high, nmos pipe cut-off, electric current flows into capacitor C, and capacitor top crown voltage increases.INVH
Possess the phase inverter of different threshold values with two when INVL, INVH possesses relatively high threshold value VH, INVL and possesses relatively low threshold value
VL.When electric current constantly flows into capacitor, the voltage of inverter input can start from scratch continuous raising.
(1) when voltage is lower than VL, XOR gate both ends all input low levels, XOR gate exports low level, and PW is low.
(2) when voltage is higher than VL and is lower than VH, XOR gate exports high level, and PW is height.
(3) when voltage is higher than VH, XOR gate output is low.
Counter is started counting in the case where PW is high in Fig. 2, and PW stops when being low.The width with PW is counted at just
Than in this way, the width of PW is just converted to digital signal.When Vsoc is low, counter O reset.
The Refresh Data period is the period of Vsoc clock, and output data precision is determined by the size of CLK, can be according to reality
The adjustment of border situation.
It makes a concrete analysis of as follows:
Electric current increases as the temperature rises, and VH-VL is remained unchanged, then PW narrows.It will
In temperature sensing circuit, M1 connects with M2, Vbias is provided to M3, so that M3 works in subthreshold value.In subthreshold value situation
Under, electric current has following relationship
Under normal circumstances, Vds can be far longer than, last can be ignored institute's above formula, and formula is changed to
Wherein thermal voltage, i.e. square that electric current I be proportional to temperature T directly proportional to temperature.As shown in Figure 3.
Phase inverter threshold voltage as shown by the following formula, so VH-VL is directly proportional to temperature T.As shown in Figure 3.
The output formula of PW is as follows
So PW is inversely proportional with temperature T, as shown in Figure 4.
Claims (7)
1. the digital temperature sensor circuit structure of a kind of low-power consumption being easily integrated, the circuit include the temperature based on mos pipe
Spend detection circuit, voltage-pulse conversion circuit, digitizer.
2. the digital temperature sensor circuit structure of a kind of low-power consumption according to claim 1 being easily integrated, feature
Be: temperature sensing circuit is made of two series connection pmos pipes and a switch pmos pipe.
3. the digital temperature sensor circuit structure of a kind of low-power consumption according to claim 1 being easily integrated, feature
Be: temperature sensing circuit output varies with temperature and the electric current of direct proportion variation.
4. the digital temperature sensor circuit structure of a kind of low-power consumption according to claim 1 being easily integrated, feature
It is: current signal is converted to by voltage signal by capacitor.
5. the digital temperature sensor circuit structure of a kind of low-power consumption according to claim 1 being easily integrated, feature
It is: voltage-pulse conversion is realized by the phase inverter of two different threshold values.
6. the digital temperature sensor circuit structure of a kind of low-power consumption according to claim 1 being easily integrated, feature
It is: realizes the Digital output of signal by clock signal and counter.
7. the digital temperature sensor circuit structure of a kind of low-power consumption according to claim 1 being easily integrated, feature
Be: the frequency and precision of output data can be controlled by the clock frequency of input.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811564574.6A CN109883561A (en) | 2018-12-20 | 2018-12-20 | A kind of digital temperature sensor circuit structure of low-power consumption being easily integrated |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811564574.6A CN109883561A (en) | 2018-12-20 | 2018-12-20 | A kind of digital temperature sensor circuit structure of low-power consumption being easily integrated |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109883561A true CN109883561A (en) | 2019-06-14 |
Family
ID=66925136
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811564574.6A Pending CN109883561A (en) | 2018-12-20 | 2018-12-20 | A kind of digital temperature sensor circuit structure of low-power consumption being easily integrated |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109883561A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111367332A (en) * | 2020-02-17 | 2020-07-03 | 深圳芥子科技有限公司 | Temperature acquisition circuit based on resistor and control method |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102338669A (en) * | 2010-05-27 | 2012-02-01 | 香港科技大学 | Low voltage low power CMOS temperature sensor circuit |
| CN102811049A (en) * | 2011-05-30 | 2012-12-05 | 三星电子株式会社 | System-on-chip, time-to-digital converters, digital phase locked loops and temperature sensors |
| CN106197708A (en) * | 2016-07-15 | 2016-12-07 | 上海电力学院 | Fully integrated temperature sensor for extremely low power dissipation micro-system |
| CN106768437A (en) * | 2015-11-25 | 2017-05-31 | 中国科学院微电子研究所 | Temperature detection system and method |
| CN107976261A (en) * | 2017-12-05 | 2018-05-01 | 合肥恒烁半导体有限公司 | A kind of temperature sensing circuit and a kind of temperature checking method |
| CN108132106A (en) * | 2018-01-22 | 2018-06-08 | 江苏星宇芯联电子科技有限公司 | A kind of CMOS temperature transmitter and its method for sensing |
-
2018
- 2018-12-20 CN CN201811564574.6A patent/CN109883561A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102338669A (en) * | 2010-05-27 | 2012-02-01 | 香港科技大学 | Low voltage low power CMOS temperature sensor circuit |
| CN102811049A (en) * | 2011-05-30 | 2012-12-05 | 三星电子株式会社 | System-on-chip, time-to-digital converters, digital phase locked loops and temperature sensors |
| CN106768437A (en) * | 2015-11-25 | 2017-05-31 | 中国科学院微电子研究所 | Temperature detection system and method |
| CN106197708A (en) * | 2016-07-15 | 2016-12-07 | 上海电力学院 | Fully integrated temperature sensor for extremely low power dissipation micro-system |
| CN107976261A (en) * | 2017-12-05 | 2018-05-01 | 合肥恒烁半导体有限公司 | A kind of temperature sensing circuit and a kind of temperature checking method |
| CN108132106A (en) * | 2018-01-22 | 2018-06-08 | 江苏星宇芯联电子科技有限公司 | A kind of CMOS temperature transmitter and its method for sensing |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111367332A (en) * | 2020-02-17 | 2020-07-03 | 深圳芥子科技有限公司 | Temperature acquisition circuit based on resistor and control method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Law et al. | A Sub-$\mu $ W Embedded CMOS Temperature Sensor for RFID Food Monitoring Application | |
| CN107014507B (en) | A kind of built-in temperature sensor based on RC oscillator | |
| WO2018171364A1 (en) | Ambient light detection circuit and method, and display screen | |
| US8203392B2 (en) | Oscillator stabilized for temperature and power supply variations | |
| CN105628243B (en) | A kind of resistor-type temperature sensing chip | |
| CN102385409B (en) | VGS/R (Voltage Gradient Standard/Reference) type reference source capable of supplying zero-temperature coefficient voltage and current reference at the same time | |
| CN203775142U (en) | Digital rc oscillator | |
| CN108489625B (en) | A kind of fully integrated nearly zero-power temperature sensor of CMOS | |
| CN106768437A (en) | Temperature detection system and method | |
| US20120170616A1 (en) | Apparatus and Method for Sensing Temperature | |
| CN202750055U (en) | On-chip RC oscillator | |
| CN101210848A (en) | Circuit structure for automatic detection for temperature | |
| CN109883561A (en) | A kind of digital temperature sensor circuit structure of low-power consumption being easily integrated | |
| Lasanen et al. | A 1.2-V CMOS $ RC $ oscillator for capacitive and resistive sensor applications | |
| CN101997521A (en) | Clock generating circuit | |
| CN107294516B (en) | Power-on reset circuit without static power consumption | |
| CN210431350U (en) | Novel temperature compensation oscillator | |
| Arfah et al. | Capacitance-to-voltage converter for capacitance measuring system | |
| CN106197708A (en) | Fully integrated temperature sensor for extremely low power dissipation micro-system | |
| Sundaresan et al. | A 7-MHz process, temperature and supply compensated clock oscillator in 0.25/spl mu/m CMOS | |
| CN105784156A (en) | Integrated temperature sensor | |
| CN109387688A (en) | A kind of current detection circuit | |
| CN205785588U (en) | A kind of integrated temperature sensor in an rfid tag | |
| CN201854254U (en) | Clock generating circuit | |
| Dastanian et al. | A 0.5 V, 112 nW CMOS temperature sensor for RFID food monitoring application |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20190614 |