CN106189249A - A kind of LED encapsulation material - Google Patents
A kind of LED encapsulation material Download PDFInfo
- Publication number
- CN106189249A CN106189249A CN201610568770.5A CN201610568770A CN106189249A CN 106189249 A CN106189249 A CN 106189249A CN 201610568770 A CN201610568770 A CN 201610568770A CN 106189249 A CN106189249 A CN 106189249A
- Authority
- CN
- China
- Prior art keywords
- led encapsulation
- encapsulation material
- organic siliconresin
- exchange resin
- anion exchange
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- 239000000463 material Substances 0.000 title claims abstract description 49
- 238000005538 encapsulation Methods 0.000 title claims abstract description 30
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 claims abstract description 39
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 claims abstract description 26
- -1 organic siliconresin Chemical compound 0.000 claims abstract description 22
- 239000003063 flame retardant Substances 0.000 claims abstract description 16
- KILURZWTCGSYRE-LNTINUHCSA-K (z)-4-bis[[(z)-4-oxopent-2-en-2-yl]oxy]alumanyloxypent-3-en-2-one Chemical compound CC(=O)\C=C(\C)O[Al](O\C(C)=C/C(C)=O)O\C(C)=C/C(C)=O KILURZWTCGSYRE-LNTINUHCSA-K 0.000 claims abstract description 13
- CERQOIWHTDAKMF-UHFFFAOYSA-M Methacrylate Chemical compound CC(=C)C([O-])=O CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 claims abstract description 13
- 229910019142 PO4 Inorganic materials 0.000 claims abstract description 13
- 150000001361 allenes Chemical class 0.000 claims abstract description 13
- ZQKXQUJXLSSJCH-UHFFFAOYSA-N melamine cyanurate Chemical compound NC1=NC(N)=NC(N)=N1.O=C1NC(=O)NC(=O)N1 ZQKXQUJXLSSJCH-UHFFFAOYSA-N 0.000 claims abstract description 13
- 239000010452 phosphate Substances 0.000 claims abstract description 13
- 229920000570 polyether Polymers 0.000 claims abstract description 13
- KAKZBPTYRLMSJV-UHFFFAOYSA-N Butadiene Chemical compound C=CC=C KAKZBPTYRLMSJV-UHFFFAOYSA-N 0.000 claims abstract description 12
- 239000000203 mixture Substances 0.000 claims abstract description 8
- RGCKGOZRHPZPFP-UHFFFAOYSA-N alizarin Chemical compound C1=CC=C2C(=O)C3=C(O)C(O)=CC=C3C(=O)C2=C1 RGCKGOZRHPZPFP-UHFFFAOYSA-N 0.000 claims description 24
- 239000003957 anion exchange resin Substances 0.000 claims description 21
- KQSBZNJFKWOQQK-UHFFFAOYSA-N hystazarin Natural products O=C1C2=CC=CC=C2C(=O)C2=C1C=C(O)C(O)=C2 KQSBZNJFKWOQQK-UHFFFAOYSA-N 0.000 claims description 12
- 230000006837 decompression Effects 0.000 claims description 9
- OLLFKUHHDPMQFR-UHFFFAOYSA-N dihydroxy(diphenyl)silane Chemical compound C=1C=CC=CC=1[Si](O)(O)C1=CC=CC=C1 OLLFKUHHDPMQFR-UHFFFAOYSA-N 0.000 claims description 9
- SBRXLTRZCJVAPH-UHFFFAOYSA-N ethyl(trimethoxy)silane Chemical compound CC[Si](OC)(OC)OC SBRXLTRZCJVAPH-UHFFFAOYSA-N 0.000 claims description 9
- 239000000376 reactant Substances 0.000 claims description 9
- 239000000126 substance Substances 0.000 claims description 9
- 150000001336 alkenes Chemical class 0.000 claims description 7
- 238000003756 stirring Methods 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 6
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 claims description 4
- GHMLBKRAJCXXBS-UHFFFAOYSA-N resorcinol Chemical compound OC1=CC=CC(O)=C1 GHMLBKRAJCXXBS-UHFFFAOYSA-N 0.000 claims description 4
- 235000010290 biphenyl Nutrition 0.000 claims description 3
- 239000004305 biphenyl Substances 0.000 claims description 3
- 125000006267 biphenyl group Chemical group 0.000 claims description 3
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N phenylbenzene Natural products C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 claims description 3
- 229940106691 bisphenol a Drugs 0.000 claims description 2
- 239000003795 chemical substances by application Substances 0.000 claims description 2
- 150000003014 phosphoric acid esters Chemical class 0.000 claims description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 1
- 229910052698 phosphorus Inorganic materials 0.000 claims 1
- 239000011574 phosphorus Substances 0.000 claims 1
- 238000002360 preparation method Methods 0.000 abstract description 8
- 238000005516 engineering process Methods 0.000 abstract description 6
- 230000000694 effects Effects 0.000 abstract description 5
- 230000017525 heat dissipation Effects 0.000 abstract description 5
- 230000005540 biological transmission Effects 0.000 abstract description 4
- 238000012536 packaging technology Methods 0.000 abstract description 2
- 150000004341 dihydroxyanthraquinones Chemical class 0.000 abstract 1
- 230000000052 comparative effect Effects 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- 229920001429 chelating resin Polymers 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 238000010998 test method Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000005034 decoration Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- NCWQJOGVLLNWEO-UHFFFAOYSA-N methylsilicon Chemical compound [Si]C NCWQJOGVLLNWEO-UHFFFAOYSA-N 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- RIOQSEWOXXDEQQ-UHFFFAOYSA-N triphenylphosphine Chemical compound C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 RIOQSEWOXXDEQQ-UHFFFAOYSA-N 0.000 description 1
- DXZMANYCMVCPIM-UHFFFAOYSA-L zinc;diethylphosphinate Chemical compound [Zn+2].CCP([O-])(=O)CC.CCP([O-])(=O)CC DXZMANYCMVCPIM-UHFFFAOYSA-L 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
- C08L83/04—Polysiloxanes
- C08L83/06—Polysiloxanes containing silicon bound to oxygen-containing groups
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
- C08F212/02—Monomers containing only one unsaturated aliphatic radical
- C08F212/04—Monomers containing only one unsaturated aliphatic radical containing one ring
- C08F212/06—Hydrocarbons
- C08F212/08—Styrene
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L2203/00—Applications
- C08L2203/20—Applications use in electrical or conductive gadgets
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L2205/00—Polymer mixtures characterised by other features
- C08L2205/03—Polymer mixtures characterised by other features containing three or more polymers in a blend
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Compositions Of Macromolecular Compounds (AREA)
Abstract
Open a kind of LED encapsulation material of the present invention and preparation method thereof, methacrylate, organic siliconresin, benzene polyethers, styrene, butadiene, allene are put in reactor, heated and stirred, then phosphate ester flame retardants, melamine cyanurate, aluminium acetylacetonate and 1 are added, 2 dihydroxyanthraquinones, are heated to 140 160 DEG C, continue reaction 20 30min, then pour the mixture in mould and cool and solidify, the LED encapsulation material obtained.LED encapsulation material of the present invention is for the packaging technology of LED, and its intensity is big, and light transmission is good, the coefficient of expansion is low, heat conductivity is big, good heat dissipation effect, can be widely applied in the encapsulation technology of LED.
Description
Technical field
The present invention relates to LED field, particularly to a kind of LED encapsulation material.
Background technology
Light emitting diode (English: Light-Emitting Diode is called for short LED) is that one can convert electrical energy into light
The semiconductor electronic component of energy.This electronic component occurred as far back as 1962, can only send the HONGGUANG of low luminosity in early days, send out afterwards
Putting on display other monochromatic versions, the light that can send even to this day is throughout visible ray, infrared ray and ultraviolet, and luminosity also improves
To suitable luminosity.And purposes is also by the beginning as display lamp, display panel etc.；Along with the continuous progress of technology, light emitting diode
Display, television set daylighting decoration and illumination it are widely used in.
The material requirements being presently used for LED encapsulation has intensity greatly, light transmission is good, the coefficient of expansion is low, heat conductivity is big,
Good heat dissipation effect etc., otherwise can result in the problem reduced the service life of LED device.
Summary of the invention
In sum, the present invention is necessary to provide a kind of LED encapsulation material, and its intensity is big, and light transmission is good, the coefficient of expansion
Low, heat conductivity is big, good heat dissipation effect, can be widely used in the encapsulation technology of LED.
Additionally, there is a need to provide a kind of preparation method preparing above-mentioned encapsulating material.
A kind of LED encapsulation material, including following material based on its weight portion:
Methacrylate 5-6 part；
Organic siliconresin 20-30 part；
Benzene polyethers 1-2 part；
Styrene 8-12 part；
Butadiene 5-8 part；
Allene 5-8 part；
Phosphate ester flame retardants 0.3-0.5 part；
Melamine cyanurate 0.3-0.5 part；
Aluminium acetylacetonate 0.5-0.8 part；
1,2-dihydroxyanthraquinone 0.5-0.8 part.
Wherein, above-mentioned LED encapsulation material includes that following material is based on its weight portion:
Methacrylate 5-6 part；
Organic siliconresin 23-25 part；
Benzene polyethers 1-2 part；
Styrene 10-12 part；
Butadiene 6-8 part；
Allene 6-8 part；
Phosphate ester flame retardants 0.3-0.5 part；
Melamine cyanurate 0.3-0.5 part；
Aluminium acetylacetonate 0.5-0.8 part；
1,2-dihydroxyanthraquinone 0.6-0.7 part.
Wherein, described organic siliconresin is prepared by the following method and obtains:
By 2-(3,4-7-oxa-bicyclo[4.1.0) ethyl trimethoxy silane and the diphenyl silanediol ratio with mol ratio as 1:0.5-0.8
Put under example in reactor, add the anion exchange resin of reactant gross mass 5%, react under conditions of temperature 60-70 DEG C
10-12 hour, after completion of the reaction, removing anion exchange resin, decompression removes low-boiling-point substance, obtains organic siliconresin.
Described anion exchange resin is basic anion exchange resin, can be selected from U.S. Amberlite, IRA-
400。
Described mode of heating can use oil bath pan heating and thermal insulation.
Wherein, described phosphate ester flame retardants is selected from bisphenol-A double (diphenyl phosphoester), resorcinol (diphenylphosphoric acid
Ester) and triphenyl phosphorus at least one.
A kind of method preparing LED encapsulation material as above,
Step 1): by 2-(3,4-7-oxa-bicyclo[4.1.0) ethyl trimethoxy silane and diphenyl silanediol with mol ratio for 1:
(0.5-0.8) put under ratio in reactor, add the basic anion exchange resin of reactant gross mass 5%, in temperature
Reacting under conditions of 60-70 DEG C 10-12 hour, after completion of the reaction, remove anion exchange resin, decompression removes low-boiling-point substance,
To organic siliconresin；
2) weight portion as shown in form prepares material, by methacrylate, organic siliconresin, benzene polyethers, styrene, fourth two
Alkene, allene are put in reactor, are heated to 100-110 DEG C, stir 30-40min, then add phosphoric acid ester fire-retardant
Agent, melamine cyanurate, aluminium acetylacetonate and 1,2-dihydroxyanthraquinone, it is heated to 140-160 DEG C, continues reaction 20-
30min, then pours the mixture in mould and cools and solidifies, and the LED encapsulation material obtained compares prior art, the present invention's
LED encapsulation material, good insulating, the coefficient of expansion are low, heat conductivity is big, good heat dissipation effect and the LED encapsulation material of light weight
LED encapsulation material of the present invention is for the packaging technology of LED, and its intensity is big, and light transmission is good, the coefficient of expansion is low, lead
Hot coefficient is big, good heat dissipation effect, can be widely applied in the encapsulation technology of LED.
Detailed description of the invention
Below in conjunction with some detailed description of the invention, the present invention is described further.Specific embodiment is the most specifically
The bright present invention, non-limiting protection scope of the present invention.
Explanation to the material used by the present invention: material derives from commercially available.
Wherein, halogen-free flame retardants, from Clariant Corporation, trade mark OP1230.
Anion exchange resin is U.S. Amberlite, IRA-400.
Method of testing
Shore hardness:
Use the organosilicon after shore durometer (LA-X type) the test solidification of Hypon Instrument Ltd. of Wenzhou City
The hardness of encapsulating material (thickness is about 15mm).
Transmittance: GB2410-80 transparent plastic light transmittance.
Thermostability:
Observe the defect of test piece, such as shrink mark, cutout and roughness under an optical microscope.When there are these defects, will
Video disc is classified as substandard products.The result obtained with following ranking method evaluation.
In every 100 products, the quantity of substandard products is when 0-5, grade be A, 5-10 grade be B, when 11 or above, grade is
C.
Expansion character: GB1036-70 linear expansion coefficient of plastics test method
Embodiment 1
The preparation method of LED encapsulation material
1) preparation method of organosilicon material:
By under 2-(3,4-7-oxa-bicyclo[4.1.0) ethyl trimethoxy silane and the diphenyl silanediol ratio with mol ratio as 1:0.5
Put in reactor, add the anion exchange resin of reactant gross mass 5%, under conditions of temperature 60-70 DEG C, react 10 little
Time, after completion of the reaction, removing anion exchange resin, decompression removes low-boiling-point substance, obtains organic siliconresin；
2) weight portion as shown in form prepares material, by methacrylate, organic siliconresin, benzene polyethers, styrene, fourth two
Alkene, allene are put in reactor, are heated to 100-110 DEG C, stir 30min, then add phosphate ester flame retardants,
Melamine cyanurate, aluminium acetylacetonate and 1,2-dihydroxyanthraquinone, it is heated to 140-160 DEG C, continues reaction 20-30min,
Then pour the mixture in mould and cool and solidify, the LED encapsulation material obtained.
Embodiment 2
1) preparation method of organosilicon material:
By under 2-(3,4-7-oxa-bicyclo[4.1.0) ethyl trimethoxy silane and the diphenyl silanediol ratio with mol ratio as 1:0.6
Put in reactor, add the anion exchange resin of reactant gross mass 5%, under conditions of temperature 60-70 DEG C, react 12 little
Time, after completion of the reaction, removing anion exchange resin, decompression removes low-boiling-point substance, obtains organic siliconresin；
2) weight portion as shown in form prepares material, by methacrylate, organic siliconresin, benzene polyethers, styrene, fourth two
Alkene, allene are put in reactor, are heated to 100-110 DEG C, stir 40min, then add phosphate ester flame retardants,
Melamine cyanurate, aluminium acetylacetonate and 1,2-dihydroxyanthraquinone, it is heated to 140-160 DEG C, continues reaction 20-30min,
Then pour the mixture in mould and cool and solidify, the LED encapsulation material obtained.
Embodiment 3
1) preparation method of organosilicon material:
By under 2-(3,4-7-oxa-bicyclo[4.1.0) ethyl trimethoxy silane and the diphenyl silanediol ratio with mol ratio as 1:0.7
Put in reactor, add the anion exchange resin of reactant gross mass 5%, under conditions of temperature 60-70 DEG C, react 11 little
Time, after completion of the reaction, removing anion exchange resin, decompression removes low-boiling-point substance, obtains organic siliconresin；
2) weight portion as shown in form prepares material, by methacrylate, organic siliconresin, benzene polyethers, styrene, fourth two
Alkene, allene are put in reactor, are heated to 100-110 DEG C, stir 30min, then add phosphate ester flame retardants,
Melamine cyanurate, aluminium acetylacetonate and 1,2-dihydroxyanthraquinone, it is heated to 140-160 DEG C, continues reaction 20-30min,
Then pour the mixture in mould and cool and solidify, the LED encapsulation material obtained.
Embodiment 4
1) preparation method of organosilicon material:
By under 2-(3,4-7-oxa-bicyclo[4.1.0) ethyl trimethoxy silane and the diphenyl silanediol ratio with mol ratio as 1:0.8
Put in reactor, add the anion exchange resin of reactant gross mass 5%, under conditions of temperature 60-70 DEG C, react 12 little
Time, after completion of the reaction, removing anion exchange resin, decompression removes low-boiling-point substance, obtains organic siliconresin；
2) weight portion as shown in form prepares material, by methacrylate, organic siliconresin, benzene polyethers, styrene, fourth two
Alkene, allene are put in reactor, are heated to 100-110 DEG C, stir 40min, then add phosphate ester flame retardants,
Melamine cyanurate, aluminium acetylacetonate and 1,2-dihydroxyanthraquinone, it is heated to 140-160 DEG C, continues reaction 20-30min,
Then pour the mixture in mould and cool and solidify, the LED encapsulation material obtained.
Embodiment 5
1) preparation method of organosilicon material:
By under 2-(3,4-7-oxa-bicyclo[4.1.0) ethyl trimethoxy silane and the diphenyl silanediol ratio with mol ratio as 1:0.5
Put in reactor, add the anion exchange resin of reactant gross mass 5%, under conditions of temperature 60-70 DEG C, react 10 little
Time, after completion of the reaction, removing anion exchange resin, decompression removes low-boiling-point substance, obtains organic siliconresin；
2) weight portion as shown in form prepares material, by methacrylate, organic siliconresin, benzene polyethers, styrene, fourth two
Alkene, allene are put in reactor, are heated to 100-110 DEG C, stir 30min, then add phosphate ester flame retardants,
Melamine cyanurate, aluminium acetylacetonate and 1,2-dihydroxyanthraquinone, it is heated to 140-160 DEG C, continues reaction 20-30min,
Then pour the mixture in mould and cool and solidify, the LED encapsulation material obtained.
Embodiment 6
Compared with Example 2, by methyl silicon resin, (being purchased from Laiyang Sheng Bang organosilicon Science and Technology Ltd., article number is SI-
MQ102) replacing organic siliconresin prepared by the present invention, remaining is consistent with embodiment 2 with step with material formula, prepares LED
Encapsulating material.
Table 1:
| Embodiment 1 | Embodiment 2 | Embodiment 3 | Embodiment 4 | Comparative example 1 | |
| Methacrylate | 5 | 6 | 5 | 6 | 5 |
| Organic siliconresin | 20 | 30 | 25 | 23 | 20 |
| Benzene polyethers | 1 | 2 | 2 | 1 | 1 |
| Styrene | 8 | 12 | 10 | 8 | 8 |
| Butadiene | 5 | 8 | 8 | 6 | 5 |
| Allene | 5 | 8 | 8 | 6 | 5 |
| Phosphate ester flame retardants | 0.3 | 0.5 | 0.5 | 0.3 | 0.3 |
| Melamine cyanurate | 0.3 | 0.5 | 0.5 | 0.3 | 0.3 |
| Aluminium acetylacetonate | 0.5 | 0.8 | 0.6 | 0.8 | 0.5 |
| 1,2-dihydroxyanthraquinone | 0.5 | 0.8 | 0.6 | 0.7 | 0 |
Table 2
| Embodiment 1 | Embodiment 2 | Embodiment 3 | Embodiment 4 | Comparative example 1 | Comparative example 2 | |
| Shore hardness/A | 68 | 67 | 67 | 66 | 62 | 59 |
| Transmittance/% | 98 | 98 | 98 | 98 | 92 | 95 |
| Thermostability | A | A | A | A | B | B |
| Linear expansion coefficient/(× 10-5/ DEG C) | 3 | 3.5 | 3.8 | 3.5 | 6 | 7 |
The foregoing is only embodiments of the invention, not thereby limit the scope of the claims of the present invention, every present invention of utilization says
Equivalent structure or equivalence flow process that bright book content is made convert, or are directly or indirectly used in other relevant technical fields, all
In like manner it is included in the scope of patent protection of the present invention.
Claims (5)
1. a LED encapsulation material, it is characterised in that include that following material is based on its weight portion:
Methacrylate 5-6 part；
Organic siliconresin 20-30 part；
Benzene polyethers 1-2 part；
Styrene 8-12 part；
Butadiene 5-8 part；
Allene 5-8 part；
Phosphate ester flame retardants 0.3-0.5 part；
Melamine cyanurate 0.3-0.5 part；
Aluminium acetylacetonate 0.5-0.8 part；
1,2-dihydroxyanthraquinone 0.5-0.8 part.
2. LED encapsulation material as claimed in claim 2, it is characterised in that include that following material is based on its weight portion::
Methacrylate 5-6 part；
Organic siliconresin 23-25 part；
Benzene polyethers 1-2 part；
Styrene 10-12 part；
Butadiene 6-8 part；
Allene 6-8 part；
Phosphate ester flame retardants 0.3-0.5 part；
Melamine cyanurate 0.3-0.5 part；
Aluminium acetylacetonate 0.5-0.8 part；
1,2-dihydroxyanthraquinone 0.6-0.7 part.
3. LED encapsulation material as claimed in claim 2, it is characterised in that described organic siliconresin is prepared by the following method
Arrive:
By 2-(3,4-7-oxa-bicyclo[4.1.0) ethyl trimethoxy silane and the diphenyl silanediol ratio with mol ratio as 1:0.5-0.8
Put under example in reactor, add the anion exchange resin of reactant gross mass 5%, react under conditions of temperature 60-70 DEG C
10-12 hour, after completion of the reaction, removing anion exchange resin, decompression removes low-boiling-point substance, obtains organic siliconresin.
4. LED encapsulation material as claimed in claim 2, it is characterised in that:
Described phosphate ester flame retardants is selected from bisphenol-A double (diphenyl phosphoester), resorcinol (diphenyl phosphoester) and triphen
At least one in base phosphorus.
5. the method for the LED encapsulation material prepared as described in any one of claim 1-4, it is characterised in that:
Step 1): by 2-(3,4-7-oxa-bicyclo[4.1.0) ethyl trimethoxy silane and diphenyl silanediol with mol ratio for 1:
(0.5-0.8) put under ratio in reactor, add the basic anion exchange resin of reactant gross mass 5%, in temperature
Reacting under conditions of 60-70 DEG C 10-12 hour, after completion of the reaction, remove anion exchange resin, decompression removes low-boiling-point substance,
To organic siliconresin；
2) weight portion as shown in form prepares material, by methacrylate, organic siliconresin, benzene polyethers, styrene, fourth two
Alkene, allene are put in reactor, are heated to 100-110 DEG C, stir 30-40min, then add phosphoric acid ester fire-retardant
Agent, melamine cyanurate, aluminium acetylacetonate and 1,2-dihydroxyanthraquinone, it is heated to 140-160 DEG C, continues reaction 20-
30min, then pours the mixture in mould and cools and solidifies, the LED encapsulation material obtained.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610568770.5A CN106189249A (en) | 2016-07-19 | 2016-07-19 | A kind of LED encapsulation material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610568770.5A CN106189249A (en) | 2016-07-19 | 2016-07-19 | A kind of LED encapsulation material |
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| Publication Number | Publication Date |
|---|---|
| CN106189249A true CN106189249A (en) | 2016-12-07 |
Family
ID=57493266
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| CN201610568770.5A Pending CN106189249A (en) | 2016-07-19 | 2016-07-19 | A kind of LED encapsulation material |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108285633A (en) * | 2017-12-25 | 2018-07-17 | 柳州璞智科技有限公司 | A kind of encapsulating material and preparation method thereof |
| WO2021168954A1 (en) * | 2020-02-28 | 2021-09-02 | Tcl华星光电技术有限公司 | Encapsulation fluorescent glue layer and manufacturing method therefor, and quantum dot backlight source |
| CN115894934A (en) * | 2022-11-21 | 2023-04-04 | 江南大学 | Phosphorus-containing polysiloxane, preparation method thereof and application of modified epoxy resin |
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| CN102719096A (en) * | 2012-06-20 | 2012-10-10 | 广东汕头超声电子股份有限公司覆铜板厂 | Resin composition and preparation method thereof |
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| CN102115600A (en) * | 2010-11-26 | 2011-07-06 | 苏州生益科技有限公司 | Thermosetting resin composition, prepreg and laminated board |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108285633A (en) * | 2017-12-25 | 2018-07-17 | 柳州璞智科技有限公司 | A kind of encapsulating material and preparation method thereof |
| WO2021168954A1 (en) * | 2020-02-28 | 2021-09-02 | Tcl华星光电技术有限公司 | Encapsulation fluorescent glue layer and manufacturing method therefor, and quantum dot backlight source |
| US11870014B2 (en) | 2020-02-28 | 2024-01-09 | Tcl China Star Optoelectronics Technology Co., Ltd. | Encapsulated fluorescent adhesive layer having a quantum dot material |
| CN115894934A (en) * | 2022-11-21 | 2023-04-04 | 江南大学 | Phosphorus-containing polysiloxane, preparation method thereof and application of modified epoxy resin |
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