CN106165118A - 用于具有旁路配置的pv模块的背侧接触层 - Google Patents

用于具有旁路配置的pv模块的背侧接触层 Download PDF

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CN106165118A
CN106165118A CN201580018822.5A CN201580018822A CN106165118A CN 106165118 A CN106165118 A CN 106165118A CN 201580018822 A CN201580018822 A CN 201580018822A CN 106165118 A CN106165118 A CN 106165118A
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battery
adjacent cell
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艾弗特·尤金·本德
巴斯·伯纳德瑞斯·凡阿肯
尼古拉斯·吉耶万
马库斯·约翰·詹森
伊凯·塞萨尔
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Nederlandse Organisatie voor Toegepast Natuurwetenschappelijk Onderzoek TNO
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Abstract

本申请提供了用于具有多个PV电池(1、2)的光伏模块的背侧连接层。PV电池(1、2)是具有多个背侧触点(11、12)的电池。旁路二极管连接路径(6)沿着两个相邻电池(1、2)的边缘方向在背侧连接层(3)中形成,所述路径具有围绕两个相邻电池(1、2)的多个背侧触点(11、12)中的外部触点(4、5)的笔直或曲折的图案。

Description

用于具有旁路配置的PV模块的背侧接触层
技术领域
本发明涉及一种用于连接多个光伏(PV)电池的正负背侧触点以形成光伏模块的背侧连接层(箔或衬底的形式)。
背景技术
国际专利公布WO2013/182955公开了包括背接触太阳能电池的光伏模块的背板。提供了一种形成为连接电路的导电背板,该电路连接至模块的太阳能电池的电极。
国际专利公布WO2012/026806公开了具有改善的表面钝化的光伏设备和模块。其包括旨在用于背接触金属贯穿孔光伏设备的圆周外壁和/或孔壁。在第一半导体层和第二半导体层之间设置pn结。
国际专利公布WO2011/160161公开了一种光伏模块,该光伏模块在背侧上耦接至用于传导太阳能电池中生成的电能的导电或传导结构层。在一个实施方式中,电气组件可以嵌入到太阳能电池的传导结构层中。
发明内容
本发明要求提供一种用于光伏模块的背面接触层,其中,该光伏模块允许包含旁路电路。
根据本发明的第一方面,提供了根据如上定义的前序部分的背侧接触层,其中具有预定最小宽度(w)的旁路二极管连接路径沿着两个相邻电池的边缘方向形成在背侧连接层中,该两个相邻电池以彼此相距电池间距离(s)放置,其中相邻电池中的每个上的外部触点从相应的相邻电池的边缘位移距离(d),其中距离(d)大于0,使得一行外部触点之间的总距离(2d+s)大于或等于预定最小宽度(w)以及与旁路二极管连接路径相邻的两个划片槽的宽度(2i)的总和(或满足数学关系2d+s>=w+2i)。
第二方面,提供了根据如上定义的前序部分的背侧接触层,其中具有预定最小宽度(w)的旁路二极管连接路径沿着两个相邻电池的边缘方向形成在背侧连接层中,该两个相邻的电池以彼此相距电池间距离(s)放置,该路径围绕位于两个相邻电池的边缘附近的外部触点具有曲折图案。在与第一方面中相似的数学关系中,这将涉及2d+s<w+2i。
本发明的两个方面以及在其他从属权利要求中描述的另外的实施方式允许背侧接触层与具有更合适宽度的旁路二极管导体的更高效的布局。
附图说明
以下将参考附图使用多个示例性实施方式来更加详细地论述本发明,其中:
图1示出了根据现有技术的实施方式的上覆两个相邻PV电池的背侧接触层部分的详细视图,其中PV电池具有用于旁路二极管连接的条状导体;
图2示出了根据本发明的实施方式的上覆两个相邻PV电池的背侧接触层的详细视图,其中PV电池具有用于旁路二极管连接的条状导体;
图3示出了根据图2的实施方式的具有边缘触点和导电条的两个相邻PV电池的示意图;
图4示出了根据本发明的另一实施方式的具有边缘触点和导电条的两个相邻PV电池的示意图;
图5示出了边缘触点缩进的本发明的实施方式的示意图。
具体实施方式
本发明的实施方式涉及在具有多个光伏电池1的光伏模块中背侧连接薄板的改进布局和布置,例如当PV模块被部分遮蔽时其利用旁路二极管和相关联电路来改进PV模块的性能。
图1示出了上覆两个相邻的PV电池(仅示出了其边缘7)的背侧接触层3的一部分的详细视图。背侧接触层3包括用于旁路二极管连接的条状导体6,该条状导体6位于两个接触层部分3之间,由两个划片槽(scribe lane)8分开。在PV模块的典型设置中,两个PV电池以1.25mm的间隔(标称,在实线边缘7之间)彼此相邻放置,其甚至可以如细虚线7a所示分开更远(分开1.75mm)。相邻的电池在其外部边缘处设有背侧触点,或外部触点4、5,对于图1中的相邻电池中的每个示出其中的一个触点。为了将旁路二极管导体6安装在背侧接触层3的可用空间中,旁路二极管导体6具有仅为0.75mm的常规宽度(因为需要1mm宽的划片槽8以提供充分的隔离)。
如果两个电池1、2(仍参见图3和图4)相邻,并且两个电池1、2在太阳能电池的背侧均具有触点并沿着边缘放置,则在电池1、2之间几乎没有任何空间以用于朝向接线盒延伸的铜条(旁路二极管导体6),如从图1和以上说明可以清楚的看出。两个相邻电池1、2的触点4、5之间的空间很小。此外,为了制造条6,需要通常1mm的隔离划片8,其“侵蚀”掉触点4、5之间的导电材料。然后,这将产生非常细的条6,该条6应该能够承载通常9A的电流并且因此产生高功耗,这对设备是不利的并且在遮光条件下对模块操作具有不良影响。
作为其示例,可以对用于旁路二极管的Cu轨道进行如下计算。用于旁路二极管导体6的典型箔的特性为:长度l=0.5m,厚度t=35μm,宽度w=0.75mm,以及电阻率ρ=17.10-9Ωm,使得电阻在导通状态下,旁路二极管通常承载8A的电流,这意味着功耗P=R因为典型的PV模块的额定功率为约200w,这将导致大于10%的损耗,这是不可接受的。
在本发明的第一方面中可以通过一组实施方式来解决这个问题,其中具有预定最小宽度(w)的旁路二极管连接路径6沿着两个相邻电池1、2的边缘方向形成在背侧连接层3中,该两个相邻电池以彼此相距电池间距离(s)放置,其中相邻电池中的每个上的外部触点4、5从各自的相邻电池的边缘移位距离(d),使得一行外部触点间的总距离2d+s大于预定最小宽度(w)和与旁路二极管连接路径6相邻的两个划片槽的宽度(2i)的总和。在数学关系中,两个邻近的电池1、2的外部触点4、5的距离(d)选择为满足公式2d+s>w+2i。所产生的旁路二极管连接路径6在此组实施方式中甚至可以实施为笔直的金属化路径。
在图2中,提供了用于该问题的另一解决方案,在此意义上,具有预定最小宽度(w)的旁路二极管连接路径6沿着两个相邻电池1、2的边缘方向形成在背侧连接层3中,该两个相邻电池以彼此相距电池间距离(s)放置,并且该路径具有围绕位于两个相邻电池1、2的边缘附近的外部触点4、5的曲折图案。应注意,在该组实施方式中,距离d甚至可以等于0,即,外部触点直接布置在电池1、2的边缘上。因此在电池1、2上具有更加优选的电流路径并使得电池上的金属用量更少(通常该金属是Ag,因此非常昂贵)。
更一般而言,多个电池1、2包括具有对称图案的正负背侧触点11、12的电池,其中正负背侧触点的子集4、5沿着邻近的电池1、2的边缘方向布置。这种电池1、2的示例为叉指背接触(IBC)电池或发射极穿孔卷绕(EWT)电池。
在另一实施方式中,两个相邻电池1、2相对于彼此定向成使得外部触点4、5沿着边缘方向散布。例如,在PV电池1、2沿着两个相邻的电池1、2的边缘方向具有长度l的情况下,n个触点在一个边缘处以偏移量0等距放置,并且在相对的边缘处以偏移量l/2n放置。这在图3的示意图中更清楚地示出,其中n=4。所使用的PV电池1、2的背侧触点11、12用空圆圈和实圆圈表示,而在背侧接触PV电池中,正负触点以彼此相邻的图案设置。应注意,在PV模块中,上述PV电池1、2对于180度旋转而言是不变的,这使得在PV模块制造中容易地布置PV电池。
在另一实施方式中,正负背侧触点11、12布置成多行,并且包括多个外部触点4、5的多行中的外部一行相比多行中的其他行具有较少的触点。这将使得旁路二极管(旁路二极管导体6)的导电引线更平滑地曲折,从而提供制造背侧连接层的优点,更具体而言,例如通过划线在其内部提供隔离槽8的优点。
通过实现曲折导电轨道6以及以图3所示的散布方式放置两个相邻电池1、2的边缘触点4、5,旁路二极管的导电引线(旁路二极管导体6)可以实现为比现有技术的实施方式具有更大的宽度,例如,具有至少2mm或者甚至5mm的宽度。这可与另一实施方式结合,其中两个相邻电池间的电池间距离(s)小于2mm。这些解决方案还允许在单个PV模块中具有三个以上旁路二极管的模块。更一般而言,本发明还涉及包括多个光伏电池和根据本文描述的实施方式中的任一个所述的背侧连接层的光伏模块。
本发明总体上涉及背接触电池1、2与触点4、5沿着附接至类PCB的铜箔(背侧连接层3)的边缘的配置,该铜箔包括在相邻电池1、2的边缘触点4、5之间曲折的细铜箔条6。在另一实施方式中,旁路二极管连接路径6延伸至背侧连接层3的接线盒连接部。然后,旁路连接路径6可以朝着接线盒伸出,在接线盒处,二者连接至旁路二极管并且以惯常方式形成用于PV模块的旁路电路。两个相邻电池1、2的触点4、5散布,以允许可以交替方式布置的电池1、2中的任一个的边缘触点4、5之间的曲折路径6位于相邻电池1、2的第一电池和第二电池下方。
在图4示意性地示出的另一实施方式中,在与具有多个电流采集点11、12的背接触电池(IBC,EWT)结合的金属箔3中设置曲折导电路径6以用于旁路二极管连接,在电流采集点的背侧靠近电池1、2的边缘放置电流采集点的子集(外部触点4’、5’)。或者换句话讲,两个相邻的电池1、2的外部触点4’、5’朝向各自的电池1、2的中心缩进,即,远离电池1、2的边缘。例如,这可使用缩进母线配置来实现,如图5所示的实施方式中示意性示出的,例如,使用“弯头”类型或90度配置来实现。在该附图中,示出了电流采集线15、18以及采集母线14、17。在该PV电池的一侧,设置触点12,而在另一侧,触点4使用另一导体16位移距离d。
或者,对于具有边缘触点的常规PV电池1、2,电池1、2的边缘上的外部背触点4’、5’朝向电池1、2的中心远离边缘移动(比较,图4中的外部触点4、5与图3的实施方式比较)。在本实施方式中,更平滑的曲折图案可用于旁路二极管导体6,其具有比参照图3所述的实施方式更大的宽度。
本发明实施方式允许对具有沿着电池1、2的边缘放置的触点4、5的背接触电池1、2应用箔技术(这是电池对称性所要求的),并且允许利用背接触电池实现基于金属箔的PV模块,该背接触电池包括但不限于IBC电池和EWT电池,其中可以集成标准旁路电路。
在另一实施方式中,背侧连接层还包括直接连接至旁路二极管连接路径6的旁路二极管,即作为接触箔3的一部分,其还允许通过PV模块的封装层来保护旁路二极管。
上面已经参照附图中所示的多个示例性实施方式描述了本发明的实施方式。一些部件或元件的修改和替代实施例是可行的,这些修改和替代实施例包含在所附权利要求书限定的保护范围内。

Claims (13)

1.背侧连接层,用于连接用于形成光伏模块的多个光伏(PV)电池(1、2)的正负背侧触点(11、12),
其中,具有预定最小宽度(w)的旁路二极管连接路径(6)沿两个相邻电池(1、2)的边缘方向形成在所述背侧连接层(3)中,所述两个相邻电池以彼此相距电池间距离(s)放置,
其中,所述相邻电池中的每个上的外部触点(4、5)从相应的相邻电池的边缘位移距离(d),其中,所述距离d大于0,使得一行外部触点间的总距离(2d+s)大于或等于所述预定最小宽度(w)和与所述旁路二极管连接路径(6)相邻的两个划片槽的宽度(2i)的总和。
2.背侧连接层,用于连接用于形成光伏模块的多个光伏(PV)电池(1、2)的正负背侧触点(11、12),
其中,具有预定最小宽度(w)的旁路二极管连接路径(6)沿两个相邻电池(1、2)的边缘方向形成在所述背侧连接层(3)中,所述两个相邻电池以彼此相距电池间距离(s)放置,并且所述旁路二极管连接路径(6)具有围绕位于所述两个相邻电池(1、2)的边缘附近的外部触点(4、5)的曲折图案。
3.根据权利要求1或2所述的背侧连接层,其中所述多个光伏电池包括具有对称图案的正负背侧触点的电池,其中正或负背侧触点的子集沿着所述边缘方向布置。
4.根据权利要求1至3中的任一项所述的背侧连接层,其中所述两个相邻电池(1、2)相对于彼此定向成使得所述外部触点(4、5)沿着所述边缘方向散布。
5.根据权利要求1至4中的任一项所述的背侧连接层,其中所述正负背侧触点(11、12)布置成多个行,以及其中包括所述外部触点(4、5)的所述多个行中的外部一行相比所述多个行中的其他行具有更少的触点。
6.根据权利要求1至5中的任一项所述的背侧连接层,其中所述外部触点(4、5)直接布置在所述电池(1、2)的边缘上。
7.根据权利要求1至4中的任一项所述的背侧连接层,其中两个相邻电池(1、2)的所述外部触点(4、5)朝向各自的电池(1)的中心缩进。
8.根据权利要求1至7中的任一项所述的背侧连接层,其中所述多个电池(1、2)包括叉指背接触电池或发射极穿孔卷绕电池。
9.根据权利要求1至8中的任一项所述的背侧连接层,其中所述旁路二极管连接路径(6)延伸至所述背侧连接层(3)的接线盒连接部。
10.根据权利要求1至8中的任一项所述的背侧连接层,还包括直接连接至所述旁路二极管连接路径(6)的旁路二极管。
11.根据权利要求1至10中的任一项所述的背侧连接层,其中所述旁路二极管连接路径(6)的宽度至少为2mm,例如,为5mm。
12.根据权利要求1至11中的任一项所述的背侧连接层,其中两个相邻电池之间的电池间距离(s)小于2mm。
13.光伏模块,包括多个光伏电池和根据权利要求1至12中的任一项所述的背侧连接层。
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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5972732A (en) * 1997-12-19 1999-10-26 Sandia Corporation Method of monolithic module assembly
US20100012172A1 (en) * 2008-04-29 2010-01-21 Advent Solar, Inc. Photovoltaic Modules Manufactured Using Monolithic Module Assembly Techniques
CN103155158A (zh) * 2010-08-24 2013-06-12 荷兰能源建设基金中心 具有改进的分路电阻的背接触光电电池

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200733407A (en) * 2005-07-26 2007-09-01 Solaria Corp Method and system for manufacturing solar panels using an integrated solar cell using a plurality of photovoltaic regions
US20070095384A1 (en) * 2005-10-28 2007-05-03 Farquhar Donald S Photovoltaic modules and interconnect methodology for fabricating the same
JP4989549B2 (ja) * 2007-08-24 2012-08-01 三洋電機株式会社 太陽電池及び太陽電池モジュール
CN102132423A (zh) * 2008-08-27 2011-07-20 应用材料股份有限公司 背接触式太阳能电池模块
NL2001958C (en) * 2008-09-05 2010-03-15 Stichting Energie Method of monolithic photo-voltaic module assembly.
US20100206352A1 (en) * 2009-02-13 2010-08-19 Applied Materials, Inc. Low-concentration flat profile photovoltaic modules
US20120081857A1 (en) * 2009-06-25 2012-04-05 Mitsubishi Electric Corporation Terminal box for solar cell module
AU2011269713B2 (en) 2010-06-23 2013-08-29 Allegion (Australia) Pty Ltd A locking mechanism
AT12234U1 (de) * 2010-06-23 2012-01-15 Austria Tech & System Tech Photovoltaisches modul und verfahren zum herstellen eines photovoltaischen moduls
NL2006932C2 (en) * 2011-06-14 2012-12-17 Stichting Energie Photovoltaic cell.
JP2013048166A (ja) * 2011-08-29 2013-03-07 Sharp Corp 太陽電池モジュール、太陽電池モジュールアレイ、および太陽電池モジュールの製造方法
WO2013182955A2 (en) * 2012-06-05 2013-12-12 Ebfoil S.R.L. Back-sheet for photovoltaic modules comprising back-contact solar cells

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5972732A (en) * 1997-12-19 1999-10-26 Sandia Corporation Method of monolithic module assembly
US20100012172A1 (en) * 2008-04-29 2010-01-21 Advent Solar, Inc. Photovoltaic Modules Manufactured Using Monolithic Module Assembly Techniques
CN103155158A (zh) * 2010-08-24 2013-06-12 荷兰能源建设基金中心 具有改进的分路电阻的背接触光电电池

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