CN106158480A - A kind of thin film switch and preparation method thereof - Google Patents
A kind of thin film switch and preparation method thereof Download PDFInfo
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- CN106158480A CN106158480A CN201610616935.1A CN201610616935A CN106158480A CN 106158480 A CN106158480 A CN 106158480A CN 201610616935 A CN201610616935 A CN 201610616935A CN 106158480 A CN106158480 A CN 106158480A
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- layer
- upper epidermis
- glue
- thin film
- circuit
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H13/00—Switches having rectilinearly-movable operating part or parts adapted for pushing or pulling in one direction only, e.g. push-button switch
- H01H13/70—Switches having rectilinearly-movable operating part or parts adapted for pushing or pulling in one direction only, e.g. push-button switch having a plurality of operating members associated with different sets of contacts, e.g. keyboard
- H01H13/702—Switches having rectilinearly-movable operating part or parts adapted for pushing or pulling in one direction only, e.g. push-button switch having a plurality of operating members associated with different sets of contacts, e.g. keyboard with contacts carried by or formed from layers in a multilayer structure, e.g. membrane switches
- H01H13/704—Switches having rectilinearly-movable operating part or parts adapted for pushing or pulling in one direction only, e.g. push-button switch having a plurality of operating members associated with different sets of contacts, e.g. keyboard with contacts carried by or formed from layers in a multilayer structure, e.g. membrane switches characterised by the layers, e.g. by their material or structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H13/00—Switches having rectilinearly-movable operating part or parts adapted for pushing or pulling in one direction only, e.g. push-button switch
- H01H13/70—Switches having rectilinearly-movable operating part or parts adapted for pushing or pulling in one direction only, e.g. push-button switch having a plurality of operating members associated with different sets of contacts, e.g. keyboard
- H01H13/88—Processes specially adapted for manufacture of rectilinearly movable switches having a plurality of operating members associated with different sets of contacts, e.g. keyboards
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H2229/00—Manufacturing
- H01H2229/056—Laminating
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- Push-Button Switches (AREA)
- Manufacture Of Switches (AREA)
Abstract
The present invention relates to a kind of thin film switch and preparation method thereof, it includes upper epidermis, layer and is arranged at described upper epidermis and the interlayer of described layer, it is distributed spaced multiple every hole on described interlayer, described upper epidermis and described layer are respectively formed with and the described upper circuit corresponding every hole and lower circuit on surface in opposite directions, described interlayer is bonding with described layer by covering the first glue-line in its lower surface, and bonding with described upper epidermis by covering second glue-line on surface thereon；Formed and the described air flue mechanism being connected every hole between described layer and described first glue-line.By using the first glue-line and the second PUR to connect interlayer and upper epidermis, layer, it thus is avoided that use glue carries out boning and being conducive to protecting environment；And between layer and the first glue-line, form the air flue mechanism being connected with every hole, be conducive to completely cutting off air, steam etc., improve its service life.
Description
Technical field
The invention belongs to electrical switch field, relate to a kind of thin film switch, be specifically related to a kind of thin film switch and making thereof
Method.
Background technology
Along with the development of science and technology, various electronic equipments emerge in multitude.Keyboard is that a lot of electronic equipment is common
Device, for inputting word information etc., common are computor-keyboard, communication apparatus keyboard, family's key shelf etc..On thin film switch is
State the components and parts of keyboard, now tend to thin design, flexibly and the direction of low cost is developed, and have that volume is little, lightweight, operation
The advantage such as simple, be widely used in intelligent electronic instrument, Medical Instruments, Digit Control Machine Tool, communication apparatus, office appliance, household electrical appliances,
In the various products such as computor-keyboard.
Conventional thin film switch structure is as it is shown in figure 1, it mainly includes upper epidermis 110 ', layer 120 ' and is arranged at
PET interlayer 130 ' between upper epidermis 110 ' and layer 120 ', PET interlayer 130 ' is distributed multiple every hole 132 ', upper epidermis
The inner surface of 110 ' is formed with the upper circuit 112 ' corresponding with every hole 132 ', and the inner surface of layer 120 ' is formed and powers on
The lower circuit 122 ' that road 112 ' is corresponding, upper epidermis 110 ' and layer 120 ' are bonded in PET interlayer by gelatine layer 140 '
On two surfaces of 130 '.Based on such structure, its processing technology generally: (1) is upper point of upper epidermis 110 ', layer 120 '
Yin Shua not go up circuit 112 ', lower circuit 122 '；(2) ATE test is carried out subsequently to guarantee upper circuit 112 ' and lower circuit 122 '
Printing quality；(3) respectively upper epidermis 110 ', layer 120 ' are carried out glue printing；(4) PET interlayer 130 ' is printed with glue
Upper epidermis 110 ' after brush carries out bonding combination, is combined with layer 120 ' after point sanction；(5) above-mentioned three-decker is carried out
Roll.There is following problems in existing thin film switch production technology: the CPK value of making technology is only 1.105, needs to be carried
High；Water resistance is the best；Needing to carry out twice glue printing, environmental pollution is heavier；And need to carry out twice glue printing,
Twice IR is dried, and energy consumption is bigger；And owing to every hole 132 ' size and the factor of PET interlayer 130 ' thickness, causing button right
Thin film switch applies easily to cause during pressure the instability of loading so that current lead-through rate declines, and affects the use of thin film switch
Life-span.
Summary of the invention
The invention aims to overcome the deficiencies in the prior art to provide a kind of thin film switch.
For reaching above-mentioned purpose, the technical solution adopted in the present invention is: a kind of thin film switch, it comprise upper epidermis, under
Top layer and the middle interlayer being arranged between described upper epidermis and described layer, be distributed spaced on septum layer
Multiple every hole, described upper epidermis and described layer surface in opposite directions are respectively formed with circuit and lower circuit, described in power on
Road be respectively provided with on described lower circuit and the described upper conduction silver point corresponding every hole and lower conduction silver point, it is characterised in that:
Described interlayer is by cover the first glue-line in its lower surface bonding with described layer, and passes through to cover surface thereon
Second glue-line is bonding with described upper epidermis；Formed between described layer and described first glue-line and be connected every hole with described
Air flue mechanism, described first glue-line and described second glue-line are PUR.
Optimally, described air flue mechanism includes the air flue cell body being formed at described layer surface and is formed at described
One film surface and the air flue cover plate corresponding with described air flue cell body.
Optimally, the thickness of septum layer is 0.03 ~ 0.04mm, described first glue-line and the thickness of described second glue-line
Being independently of one another 0.1 ~ 0.2mm, the thickness of described upper epidermis and described layer is independently of one another 0.05 ~ 0.1mm.
A further object of the present invention is to provide the preparation method of a kind of above-mentioned thin film switch, and it comprises the following steps:
Step (a) prints formation hot melt adhesive film on two surfaces of middle interlayer, and it is stamped and formed out MARK point and every hole, and
Its any surface printing forms the part of air flue mechanism；
Step (b) prints the lower circuit being formed with PIN on any surface of layer, and printing forms gas on said surface
The remainder of road mechanism；
Step (c) is printed on any surface of upper epidermis and is formed the upper circuit without PIN, makes interlayer cover followed by hot melt adhesive film
It is located at described upper epidermis to print on the surface of described upper circuit；
Upper epidermis, layer and middle interlayer are carried out stacking and are combined by step (d), carry out heat and roll.
Optimally, described step (b) including:
Step (b1) prints silver slurry on any surface of layer, forms silver wire after infrared drying；
Step (b2) printing UV ink on said surface, becomes UV insulating barrier in described silver wire overlying cap-shaped after ultra-violet curing；
Step (b3) prints silver slurry on described UV insulating barrier, forms silver wire jumper, and print in corresponding position after infrared drying
Scopiform becomes carbon PIN；
Upper epidermis after step (b3) is processed by step (b4) is placed in 140 ~ 160 DEG C and is dried and within 60 ~ 120 minutes, is formed with PIN and powers on
Road；And printing UV ink on said surface, form the remainder of air flue mechanism after solidification；
Described step (c) including:
Step (c1) prints silver slurry on any surface of upper epidermis, forms silver wire after infrared drying；
Step (c2) printing UV ink on said surface, becomes UV insulating barrier in described silver wire overlying cap-shaped after ultra-violet curing；
Step (c3) prints silver slurry on described UV insulating barrier, forms silver wire jumper after infrared drying；
Upper epidermis after step (c3) process is placed in 140 ~ 160 DEG C of formation in dry 60 ~ 120 minutes and powers on without PIN by step (c4)
Road；Interlayer is made to cover on the surface that described upper epidermis prints described upper circuit followed by described hot melt adhesive film.
Further, the temperature of described infrared drying is 130 ~ 140 DEG C；Described UV intensity is 80 ~ 150mJ/cm2；Step
Suddenly, in (d), described rolling parameter is: temperature is 100 ~ 200 DEG C, hot rolling speed is 1 μm/s ~ 1cm/s, pressure is 0.5MPa ~
5MPa。
The present invention also provides for a kind of thin film switch, and it comprises upper epidermis, layer and is arranged at described upper epidermis and institute
State the middle interlayer between layer, be distributed spaced multiple every hole on septum layer, described upper epidermis and described under
It is respectively formed with on surface in opposite directions, top layer on circuit and lower circuit, described upper circuit and described lower circuit and is respectively provided with and institute
State the upper conduction silver point corresponding every hole and lower conduction silver point, it is characterised in that: described upper epidermis and described layer are in opposite directions
It is respectively formed with on surface and encloses the felt pad high level being located at around described upper conduction silver point and described lower conduction silver point, described insulation
The thickness of pad level is more than described upper conduction silver point or the thickness of described lower conduction silver point.
Optimally, it also include being arranged between septum layer and described layer and with the described gas being connected every hole
Road mechanism.
Further, septum layer is bonding with described layer by covering the first glue-line in its lower surface, and
Bonding with described upper epidermis by covering second glue-line on surface thereon.
Further, described air flue mechanism includes the air flue cell body being formed at described layer surface and is formed at described
First film surface and the air flue cover plate corresponding with described air flue cell body.
Further, the thickness of septum layer is 0.03 ~ 0.04mm, described first glue-line and the thickness of described second glue-line
Degree is independently of one another 0.1 ~ 0.2mm, and the thickness of described upper epidermis and described layer is independently of one another 0.05 ~ 0.1mm.
It is still another object of the present invention to provide the manufacture method of a kind of above-mentioned thin film switch, it comprises the following steps:
Step (a) centering interlayer is stamped and formed out MARK point and every hole；
Step (b) prints lower circuit and the felt pad high level being formed with PIN on any surface of layer；
Step (c) is printed on any surface of upper epidermis and is formed the upper circuit without PIN and felt pad high level；
Upper epidermis, layer and middle interlayer are carried out stacking and are combined by step (d).
Owing to technique scheme is used, the present invention compared with prior art has the advantage that bilayer hot melt of the present invention
Film thin film switch, by using the first glue-line and the second PUR to connect interlayer and upper epidermis, layer, thus is avoided that use water
Glue carries out boning and being conducive to protecting environment；And between layer and the first glue-line, form the air flue machine being connected with every hole
Structure, is conducive to completely cutting off air, steam etc., improves its service life.
Accompanying drawing explanation
Accompanying drawing 1 is existing thin film switch structure schematic diagram；
Accompanying drawing 2 is the structural representation of bilayer hot melt film thin film switch of the present invention；
Accompanying drawing 3 is the schematic cross-section of bilayer hot melt film thin film switch of the present invention；
Accompanying drawing 4 is the parameter schematic diagram of environmental testing；
Accompanying drawing 5 is the structural representation of thin film switch of the present invention；
Accompanying drawing 6 is the top view of accompanying drawing 5 bottom；
Accompanying drawing 7 is the upward view on accompanying drawing 6 top；
Wherein, 110 ', upper epidermis；112 ', upper circuit；120 ', layer；122 ', lower circuit；130 ', PET interlayer；132 ', every
Hole；140 ', gelatine layer；110, upper epidermis；112, upper conduction silver point；120, layer；122, lower conduction silver point；130, in every
Layer；132, every hole；140, the first glue-line；150, the second glue-line；160, air flue mechanism；162, air flue cell body；164, air flue cover plate；
110 ' ', upper epidermis；112 ' ', upper circuit；113 ' ', upper conduction silver point；120 ' ', layer；122 ' ', lower circuit；123 ', under
Conduction silver point；130 ' ', middle interlayer；132 ' ', every hole；140 ' ', the first glue-line；150 ' ', the second glue-line；160 ' ', air flue machine
Structure；170 ' ', felt pad is high-rise；171 ' ', cross-over block.
Detailed description of the invention
Below in conjunction with accompanying drawing, the preferred embodiment of the invention is described in detail.
First embodiment
Double-deck hot melt film thin film switch as shown in Figures 2 and 3, mainly includes upper epidermis 110, layer 120 and interlayer 130,
Interlayer 130 is arranged between upper epidermis 110 and layer 120.
Wherein, be distributed on interlayer 130 spaced multiple every hole 132.In upper epidermis 110 with layer 120 in opposite directions
Surface on form circuit 112, layer 120 is formed lower circuit 122, upper circuit 112 with upper epidermis 110 surface in opposite directions
Corresponding with lower circuit 122 and corresponding with every position, hole 132, i.e. distinguish on upper epidermis 110 and layer 120 surface in opposite directions
It is formed with the upper circuit 112 corresponding with every hole 132 and lower circuit 122.Interlayer 130 is by covering the first glue in its lower surface
Layer 140 is bonding with layer 120, and bonding with upper epidermis 110 by covering second glue-line 150 on surface thereon, this
Sample is avoided using glue to carry out boning and being conducive to protecting environment.Formed and every hole between layer 120 and the first glue-line 140
The air flue mechanism 160 that 132 are connected, is conducive to completely cutting off air, steam etc., improves its service life.
In the present embodiment, air flue mechanism 160 includes the air flue cell body 162 being formed at layer 120 surface and is formed
At the first glue-line 140 surface and the air flue cover plate 164 corresponding with air flue cell body 162.The thickness of interlayer 130 is 0.03 ~
0.04mm, the thickness of the first glue-line 140 and the second glue-line 150 is independently of one another 0.1 ~ 0.2mm, upper epidermis 110 and layer
The thickness of 120 is independently of one another 0.05 ~ 0.1mm.
Second embodiment
The present embodiment provides the manufacture method of double-deck hot melt film thin film switch in above-mentioned first embodiment, and it comprises the following steps:
Step (a) prints formation hot melt adhesive film on two surfaces of interlayer 130, and it is stamped and formed out MARK point and every hole 132,
And at its any surface printing UV ink, through 80mJ/cm2Ultraviolet radiation-curable after formed air flue cover plate 164.
Step (b) prints the lower circuit being formed with PIN on any surface of layer 120, and prints on a surface
Form air flue cell body 162.Particularly as follows:
According to the design of thin film switch, printing silver slurry on any surface of layer 120, utilize IR dried (logical at 130 DEG C
Often it is dried 30 ~ 120 seconds, lower same) form correspondingly-shaped and the silver wire of trend；
Step (b2) continues printing UV ink on a surface, through 80mJ/cm2Ultraviolet radiation-curable after in silver wire cover
Form UV insulating barrier；
Step (b3) method of reference step (b1) on UV insulating barrier continues printing silver slurry, through infrared 130 DEG C of dried shapes
Become silver wire jumper；Silver wire jumper is also silver wire, has UV insulating barrier to isolate between the silver wire in it and step (b1), prevent them it
Between be short-circuited；Further according to design or the common knowledge of those skilled in the art, print in corresponding position, layer 120 surface
The silver slurry of brush correspondence, is dried (conventional selection, 30 ~ 120 seconds) to form carbon PIN；
Layer 120 after step (b3) is processed by step (b4) is dried (being placed in 140 DEG C to be dried 120 minutes) formation comprehensively
There are circuit 122 under PIN；The layer 120 of circuit 122 under this formation is placed on ATE automated test device and tests, sentence
Whether disconnected lower circuit 122 turn on, whether have short circuit in place of；According to design, rush in the corresponding position of detection qualified products
Swaging becomes the breach needed for thin film switch and LED aperture；And printing UV ink on a surface, through 80mJ/cm2Ultraviolet light irradiate
Air flue cell body 162 is formed after solidification.
Step (c) is printed on any surface of upper epidermis and is formed without the upper circuit of PIN, followed by hot melt adhesive film make every
Layer covers on the surface that described upper epidermis prints described upper circuit.Particularly as follows:
Step (c1) according to the design of thin film switch (the wire arrangement of such as thin film switch, Position Design etc., generally make thin
Membrane switch completes before making), any surface of upper epidermis 110 prints (using the common process such as silk screen printing) silver slurry, profit
With IR in 130 DEG C of dried formation correspondingly-shaped and the silver wire of trend；
Step (c2) continues printing UV ink on a surface, through 80mJ/cm2Ultraviolet radiation-curable after in silver wire cover
Form UV insulating barrier；
Step (c3) method of reference step (c1) on UV insulating barrier continues printing silver slurry, through infrared 130 DEG C of dried shapes
Become silver wire jumper；Silver wire jumper is also silver wire, has UV insulating barrier to isolate between the silver wire in it and step (c1), prevent them it
Between be short-circuited；The upper epidermis 110 of circuit 112 in this formation is placed on ATE automated test device and tests, it is judged that on
Whether circuit 112 turn on, whether have short circuit in place of；According to design, carry out punching press shape in the corresponding position of detection qualified products
Become the breach needed for thin film switch and LED aperture.
Upper epidermis 110, layer 120 and interlayer 130 are carried out stacking and are combined by step (d) so that lower circuit 122 with power on
Road 112 is oppositely arranged, and the corresponding lid of air flue cover plate 164 is on air flue cell body 162, carries out heat and rolls, design parameter
For: temperature be 100 DEG C, hot rolling speed be 1cm/s, pressure be 5MPa..
The process capability CPu value of the high waterproof membrane switch prepared is 1.474, CPk value is 1.687, CPl value is
1.474。
And carry out liquid-proof test: sealing the escape hole of thin film switch, be dipped in the deep normal-temperature water of 2cm, first 2 hours are every
Test half an hour 1 time, within the most every 1 hour, test once, until defective；It is little that the water-proofing time of high waterproof membrane switch reaches 10
Time.
Environmental testing: prepared double-deck hot melt film thin film switch is processed according to the Parameter Conditions shown in Fig. 4, and surveys
Trying the resistance change rate before and after it processes, recording the resistance change rate of high waterproof membrane switch in the present embodiment is 100.8%.
3rd embodiment
The present embodiment provides the environmental protection manufacture method of a kind of double-deck hot melt film thin film switch, in its concrete steps and the second embodiment
Basically identical, except for the difference that: in step (d), described rolling parameter is: temperature is 200 DEG C, hot rolling speed is 1 μm/s, pressure
Power is 0.5MPa.After tested: CPu value is 1.450, CPk value is 1.580, CPl value is 1.454；High waterproof membrane switch
Water-proofing time reaches 8 hours；Resistance change rate is 101.7%.
4th embodiment
The present embodiment provides the environmental protection manufacture method of a kind of double-deck hot melt film thin film switch, in its concrete steps and the second embodiment
Basically identical, except for the difference that: the temperature of infrared drying is 135 DEG C；UV intensity is 100mJ/cm2；In step (d), described
Rolling parameter is: temperature is 150 DEG C, hot rolling speed is 0.5cm/s, pressure is 3MPa.After tested: CPu value is 1.455,
CPk value is 1.575, CPl value is 1.455；The water-proofing time of high waterproof membrane switch reaches 9 hours；Resistance change rate is
102.8%。
5th embodiment
Thin film switch as shown in Figures 5 to 7, it mainly includes upper epidermis 110 ' ', layer 120 ' ' and middle interlayer 130 ' '；
Middle interlayer 130 ' ' it is arranged on upper epidermis 110 ' ' and layer 120 ' ' between, it is distributed spaced multiple every hole on it
132’’。
Wherein, upper epidermis 110 ' ' lower surface (with layer 120 ' ' surface in opposite directions) it is formed with upper circuit 112 ' ' (shape
One-tenth mode uses routine, such as silk screen printing etc.), corresponding multiple of upper circuit 112 ' ' have with every hole 132 ' ' lead
Electricity silver point 113 ' '；Layer 120 ' ' upper surface (with upper epidermis 110 ' ' surface in opposite directions) it is formed with lower circuit 122 ' ', under
The multiple lower conduction silver point 123 ' that circuit 122 ' ' have with every hole 132 ' ' is corresponding '；Lower conduction silver point 123 ' ' and upper conductive silver
Point 113 ' ' position is corresponding；When they contact, thin film switch is connected.Upper epidermis 110 ' ' and layer 120 ' ' in opposite directions
It is respectively formed with to enclose and is located at conduction silver point 113 ' ' and lower conduction silver point 123 ' ' felt pad high level 170 ' around on surface '；
I.e. upper epidermis 110 ' ' lower surface be formed to enclose be located at conduction silver point 113 ' ' felt pad high level 170 ' around ', felt pad
High-rise 170 ' ' thickness is more than upper conduction silver point 113 ' ' thickness；Layer 120 ' ' upper surface be also formed with enclosing and be located at down
Conduction silver point 123 ' ' around felt pad high level 170 ' ', felt pad high level 170 ' herein ' thickness more than lower conduction silver point
123 ' ' thickness.The loading and the conducting pressure dissipation that so enable to thin film switch are uniform, conduction silver point 113 ' in raising '
And lower conduction silver point 123 ' ' between on-state rate, improve its service life.
In the present embodiment, felt pad high level 170 ' ' by spaced multiple cross-over blocks 171 ' ' surround, felt pad
High-rise 170 ' ' shape of end face can be varied, such as overall rounded, direction etc..Middle interlayer 130 ' ' and layer 120 ' '
Between be provided with and every hole 132 ' ' be connected air flue mechanism 160 ' ', be conducive to completely cutting off air, steam etc., improve it further and make
Use the life-span；Can be by air flue mechanism 160 ' ' with felt pad high level 170 ' ' be connected, so can simplify processing technology, reduce into
This.It is bonding that middle interlayer 130 is by covering the first glue-line 140 ' in its lower surface ' with layer 120 ' ', and pass through to cover in
Second glue-line 150 ' of its upper surface ' with upper epidermis 110 ' ' is bonding；First glue-line 140 ' ' and the second glue-line 150 ' ' the most only
It is on the spot hot melt adhesive layer or gelatine layer, certain first glue-line 140 ' ' and the second glue-line 150 ' ' it is both preferably hot melt adhesive layer, so
I.e. be conducive to the pollution to environment in manufacturing process, again can Simplified flowsheet step, reduce cost.
Essentially identical, except for the difference that in the preparation method of above-mentioned thin film switch, with the second embodiment: step (b) and step
Suddenly in (c) respectively layer, upper epidermis surface on printing form felt pad high level 170 ' ' so that felt pad high level 170 ' '
With air flue mechanism 160 ' ' it is connected.
Comparative example 1
The present embodiment provides the conventional fabrication process of a kind of thin film switch, its basically identical, except for the difference that with embodiment 1:
Step (a4) does not uses hot melt adhesive film, but is coated with glue.Final product obtains after tested: CPu value is 1.102, CPk value is
1.102, CPl value is 1.243；The water-proofing time of thin film switch is only 5 hours；Resistance change rate is 115.6%.
Above-described embodiment, only for technology design and the feature of the explanation present invention, its object is to allow person skilled in the art
Scholar will appreciate that present disclosure and implements according to this, can not limit the scope of the invention with this.All according to the present invention
The equivalence that spirit is made changes or modifies, and all should contain within protection scope of the present invention.
Claims (10)
1. a thin film switch, it comprises upper epidermis, layer and is arranged between described upper epidermis and described layer
Middle interlayer, is distributed spaced multiple every hole, described upper epidermis and described layer surface in opposite directions on septum layer
On be respectively formed be respectively provided with on circuit and lower circuit, described upper circuit and described lower circuit corresponding every hole with described
Upper conduction silver point and lower conduction silver point, it is characterised in that: described interlayer is by covering the first glue-line in its lower surface with described
Layer is bonding, and bonding with described upper epidermis by covering second glue-line on surface thereon；Described layer and institute
State to be formed between the first glue-line and be heat with the described air flue mechanism being connected every hole, described first glue-line and described second glue-line
Melten gel.
2. a thin film switch, it comprises upper epidermis, layer and is arranged between described upper epidermis and described layer
Middle interlayer, is distributed spaced multiple every hole, described upper epidermis and described layer surface in opposite directions on septum layer
On be respectively formed be respectively provided with on circuit and lower circuit, described upper circuit and described lower circuit corresponding every hole with described
Upper conduction silver point and lower conduction silver point, it is characterised in that: formed respectively on described upper epidermis and described layer surface in opposite directions
Having and enclose the felt pad high level being located at around described upper conduction silver point and described lower conduction silver point, the thickness of described felt pad high level is big
In described upper conduction silver point or the thickness of described lower conduction silver point.
Thin film switch the most according to claim 2, it is characterised in that: it also include being arranged at septum layer and described under
Between top layer and with the described air flue mechanism being connected every hole.
Thin film switch the most according to claim 2, it is characterised in that: septum layer is by covering the in its lower surface
One glue-line is bonding with described layer, and bonding with described upper epidermis by covering second glue-line on surface thereon.
5. according to the thin film switch described in claim 2 or 4, it is characterised in that: described air flue mechanism include being formed at described under
The air flue cell body of skin surface and be formed at described first film surface and the air flue cover plate corresponding with described air flue cell body.
6. according to the thin film switch described in claim 1 or 4, it is characterised in that: the thickness of septum layer is 0.03 ~
0.04mm, the thickness of described first glue-line and described second glue-line is independently of one another 0.1 ~ 0.2mm, described upper epidermis and described
The thickness of layer is independently of one another 0.05 ~ 0.1mm.
7. the manufacture method of a thin film switch, it is characterised in that it comprises the following steps:
Step (a) prints formation hot melt adhesive film on two surfaces of middle interlayer, and it is stamped and formed out MARK point and every hole, and
Its any surface printing forms the part of air flue mechanism；
Step (b) prints the lower circuit being formed with PIN on any surface of layer, and printing forms gas on said surface
The remainder of road mechanism；
Step (c) is printed on any surface of upper epidermis and is formed the upper circuit without PIN, makes interlayer cover followed by hot melt adhesive film
It is located at described upper epidermis to print on the surface of described upper circuit；
Upper epidermis, layer and middle interlayer are carried out stacking and are combined by step (d), carry out heat and roll.
The manufacture method of thin film switch the most according to claim 7, it is characterised in that described step (b) including:
Step (b1) prints silver slurry on any surface of layer, forms silver wire after infrared drying；
Step (b2) printing UV ink on said surface, becomes UV insulating barrier in described silver wire overlying cap-shaped after ultra-violet curing；
Step (b3) prints silver slurry on described UV insulating barrier, forms silver wire jumper, and print in corresponding position after infrared drying
Scopiform becomes carbon PIN；
Upper epidermis after step (b3) is processed by step (b4) is placed in 140 ~ 160 DEG C and is dried and within 60 ~ 120 minutes, is formed with PIN and powers on
Road；And printing UV ink on said surface, form the remainder of air flue mechanism after solidification；
Described step (c) including:
Step (c1) prints silver slurry on any surface of upper epidermis, forms silver wire after infrared drying；
Step (c2) printing UV ink on said surface, becomes UV insulating barrier in described silver wire overlying cap-shaped after ultra-violet curing；
Step (c3) prints silver slurry on described UV insulating barrier, forms silver wire jumper after infrared drying；
Upper epidermis after step (c3) process is placed in 140 ~ 160 DEG C of formation in dry 60 ~ 120 minutes and powers on without PIN by step (c4)
Road；Interlayer is made to cover on the surface that described upper epidermis prints described upper circuit followed by described hot melt adhesive film.
The manufacture method of thin film switch the most according to claim 8, it is characterised in that: the temperature of described infrared drying is 130 ~
140℃；Described UV intensity is 80 ~ 150mJ/cm2；In step (d), described rolling parameter is: temperature is 100 ~ 200 DEG C, heat
Rolling speed is 1 μm/s ~ 1cm/s, pressure is 0.5MPa ~ 5MPa.
10. the manufacture method of a thin film switch, it is characterised in that it comprises the following steps:
Step (a) centering interlayer is stamped and formed out MARK point and every hole；
Step (b) prints lower circuit and the felt pad high level being formed with PIN on any surface of layer；
Step (c) is printed on any surface of upper epidermis and is formed the upper circuit without PIN and felt pad high level；
Upper epidermis, layer and middle interlayer are carried out stacking and are combined by step (d).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610616935.1A CN106158480B (en) | 2016-08-01 | 2016-08-01 | A kind of thin film switch and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN107993869A (en) * | 2017-12-21 | 2018-05-04 | 昆山兴协和光电科技有限公司 | Keyboard pcb and its manufacture method |
| US10121611B2 (en) | 2017-02-23 | 2018-11-06 | Jensin Intl Technology Corp. | Membrane switch |
| CN109300724A (en) * | 2018-08-28 | 2019-02-01 | 上海幂方电子科技有限公司 | A kind of thin film switch and its manufacturing method |
| CN110544595A (en) * | 2019-09-07 | 2019-12-06 | 厦门铭彩电子科技有限公司 | Anti-static membrane switch and manufacturing method thereof |
| CN114040582A (en) * | 2021-11-11 | 2022-02-11 | 广东方舟智造科技有限公司 | Circuit printing forming equipment and method for keyboard circuit film |
| WO2023015800A1 (en) * | 2021-08-11 | 2023-02-16 | 昆山兴协和科技股份有限公司 | Membrane switch |
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| CN114040582A (en) * | 2021-11-11 | 2022-02-11 | 广东方舟智造科技有限公司 | Circuit printing forming equipment and method for keyboard circuit film |
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