CN106124563A - A kind of processing method of gas sensors electrode - Google Patents

A kind of processing method of gas sensors electrode Download PDF

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Publication number
CN106124563A
CN106124563A CN201610474354.9A CN201610474354A CN106124563A CN 106124563 A CN106124563 A CN 106124563A CN 201610474354 A CN201610474354 A CN 201610474354A CN 106124563 A CN106124563 A CN 106124563A
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CN
China
Prior art keywords
photoresist
processing method
gas sensors
sensors electrode
ceramic substrate
Prior art date
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Pending
Application number
CN201610474354.9A
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Chinese (zh)
Inventor
于广滨
关彦齐
卜镜元
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Harbin University of Science and Technology
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Harbin University of Science and Technology
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Application filed by Harbin University of Science and Technology filed Critical Harbin University of Science and Technology
Priority to CN201610474354.9A priority Critical patent/CN106124563A/en
Publication of CN106124563A publication Critical patent/CN106124563A/en
Pending legal-status Critical Current

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/28—Electrolytic cell components
    • G01N27/30—Electrodes, e.g. test electrodes; Half-cells

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  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Electrochemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Molecular Biology (AREA)
  • Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)

Abstract

A kind of processing method of gas sensors electrode.The processing method of gas sensors electrode mostly is genus chemical conversion membrane process and can use the thin film-forming methods such as vacuum evaporatation, direct current radio-frequency magnetron sputter method, chemical vapour deposition technique at present, but these methods all existing defects for current technology, such as: processing conditions is high, technology requires height, and Financial cost is high.The processing method of a kind of gas sensors electrode, it is characterised in that include the most several step: step 1: ceramic substrate is carried out pretreatment and makes it have good adhesive attraction to photoresist；Step 2: smear photoresist on ceramic substrate, and make it be uniformly distributed, dry afterwards；The present invention is for the processing method of gas sensors electrode.

Description

A kind of processing method of gas sensors electrode
Technical field:
The processing method that the present invention relates to a kind of gas sensors electrode.
Background technology:
The processing method of current gas sensors electrode mostly is genus chemical conversion membrane process and vacuum evaporatation, direct current can be used to penetrate Frequently the thin film-forming method such as magnetron sputtering method, chemical vapour deposition technique, but these methods all existing defects for current technology, Such as: processing conditions is high, technology requires height, and Financial cost is high.
Summary of the invention:
It is an object of the invention to provide a kind of triangle hot line gas sensor, solve drawbacks described above.
Above-mentioned purpose is realized by following technical scheme:
The processing method of a kind of gas sensors electrode, it is characterised in that include the most several step:
Step 1: ceramic substrate is carried out pretreatment and makes it have good adhesive attraction to photoresist；
Step 2: smear photoresist on ceramic substrate, and make it be uniformly distributed, dry afterwards；
Step 3: the template lid of size and hollow out will have been customized on a photoresist；
Step 4: utilizing ultraviolet to be exposed template processing, when ultraviolet met by the photoresist of template hollow part, character will change Become, and with chemical reagent, photoresist is changed property section dissolving, dry afterwards；
Step 5: at photoresist plated surface last layer metallic film；
Step 6: utilize chemical reagent the Film Fractionation on photoresist and surface thereof to be peeled off, remaining direct plating is on ceramic substrate Metallic film.
The processing method of described a kind of gas sensors electrode, described photoresist model is: BP212 type photoresist.
The processing method of described a kind of gas sensors electrode, described chemical reagent is: TMAH developer solution.
Beneficial effect:
1. the present invention is relative to other manufacture methods, and technical threshold is low, processing simplicity, effectively reduces gas sensors electrode Processing cost.
2. the sensor electrode precision of present invention processing is high, easily produces in batches, and template can with recycled for multiple times, Meet the fundamental state policy of country's saving.
Accompanying drawing illustrates:
Accompanying drawing 1 is the block diagram of processing method of the present invention.
Detailed description of the invention:
Embodiment 1:
The processing method of 1 one kinds of gas sensors electrodes of embodiment, it is characterised in that include the most several step:
Step 1: ceramic substrate is carried out pretreatment and makes it have good adhesive attraction to photoresist；
Step 2: smear photoresist on ceramic substrate, and make it be uniformly distributed, dry afterwards；
Step 3: the template lid of size and hollow out will have been customized on a photoresist；
Step 4: utilizing ultraviolet to be exposed template processing, when ultraviolet met by the photoresist of template hollow part, character will change Become, and with chemical reagent, photoresist is changed property section dissolving, dry afterwards；
Step 5: at photoresist plated surface last layer metallic film；
Step 6: utilize chemical reagent the Film Fractionation on photoresist and surface thereof to be peeled off, remaining direct plating is on ceramic substrate Metallic film.
Embodiment 2:
According to the processing method of a kind of gas sensors electrode described in embodiment 1, described photoresist model is: BP212 type Photoresist.
Embodiment 3:
According to the processing method of a kind of gas sensors electrode described in embodiment 1, described chemical reagent is: TMAH develops Liquid.

Claims (3)

1. the processing method of a gas sensors electrode, it is characterised in that include the most several step:
Step 1: ceramic substrate is carried out pretreatment and makes it have good adhesive attraction to photoresist；
Step 2: smear photoresist on ceramic substrate, and make it be uniformly distributed, dry afterwards；
Step 3: the template lid of size and hollow out will have been customized on a photoresist；
Step 4: utilizing ultraviolet to be exposed template processing, when ultraviolet met by the photoresist of template hollow part, character will change Become, and with chemical reagent, photoresist is changed property section dissolving, dry afterwards；
Step 5: at photoresist plated surface last layer metallic film；
Step 6: utilize chemical reagent the Film Fractionation on photoresist and surface thereof to be peeled off, remaining direct plating is on ceramic substrate Metallic film.
2. according to the processing method of a kind of gas sensors electrode described in claim 1, it is characterised in that: described photoetching Glue-type number is: BP212 type photoresist.
3. according to the processing method of a kind of gas sensors electrode described in claim 1, it is characterised in that: described chemistry Reagent is: TMAH developer solution.
CN201610474354.9A 2016-06-27 2016-06-27 A kind of processing method of gas sensors electrode Pending CN106124563A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201610474354.9A CN106124563A (en) 2016-06-27 2016-06-27 A kind of processing method of gas sensors electrode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201610474354.9A CN106124563A (en) 2016-06-27 2016-06-27 A kind of processing method of gas sensors electrode

Publications (1)

Publication Number Publication Date
CN106124563A true CN106124563A (en) 2016-11-16

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201610474354.9A Pending CN106124563A (en) 2016-06-27 2016-06-27 A kind of processing method of gas sensors electrode

Country Status (1)

Country Link
CN (1) CN106124563A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021031380A1 (en) * 2019-08-22 2021-02-25 武汉华星光电技术有限公司 Array substrate and preparation method therefor

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102426176B (en) * 2011-11-18 2013-03-27 南京工业大学 Gas sensor and manufacturing technique thereof
CN103569951A (en) * 2013-10-11 2014-02-12 华东师范大学 Method for preparing amorphous silicon micro-electromechanical systems (MEMS) suspended film structure
CN103663361A (en) * 2013-12-30 2014-03-26 哈尔滨理工大学 Flexible mechanical photoetching stripping process method of silicon substrate or ceramic substrate
CN104698039A (en) * 2015-03-26 2015-06-10 哈尔滨理工大学 AlN ceramic substrate thermal insulation structure four-unit array gas sensor and manufacturing method thereof

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102426176B (en) * 2011-11-18 2013-03-27 南京工业大学 Gas sensor and manufacturing technique thereof
CN103569951A (en) * 2013-10-11 2014-02-12 华东师范大学 Method for preparing amorphous silicon micro-electromechanical systems (MEMS) suspended film structure
CN103663361A (en) * 2013-12-30 2014-03-26 哈尔滨理工大学 Flexible mechanical photoetching stripping process method of silicon substrate or ceramic substrate
CN104698039A (en) * 2015-03-26 2015-06-10 哈尔滨理工大学 AlN ceramic substrate thermal insulation structure four-unit array gas sensor and manufacturing method thereof

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
宋露露 等: "《LED封装检测与应用》", 30 November 2011, 华中科技大学出版社 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021031380A1 (en) * 2019-08-22 2021-02-25 武汉华星光电技术有限公司 Array substrate and preparation method therefor

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Application publication date: 20161116