CN1061122A - Diode-triode mixture detector - Google Patents
Diode-triode mixture detector Download PDFInfo
- Publication number
- CN1061122A CN1061122A CN 90108785 CN90108785A CN1061122A CN 1061122 A CN1061122 A CN 1061122A CN 90108785 CN90108785 CN 90108785 CN 90108785 A CN90108785 A CN 90108785A CN 1061122 A CN1061122 A CN 1061122A
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- China
- Prior art keywords
- diode
- triode
- parallel
- circuit
- pipe
- Prior art date
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Abstract
At the final stage radio frequency amplifier colelctor electrode that receives the amplitude modulation CF signal and connect two loops and output to power supply V+, loop is by silicon (or germanium) the diode D of NP connection
1, be connected to radio frequency L
1C
2The inductance of the parallel resonance tank circuit, and pass through L
1C
2The parallel resonance tank circuit is communicated with V+, and another loop is by silicon (or germanium) triode Q
2Emitter junction NP, connect R
4C
4Parallel circuit is connected V
+, Q
2The emitter junction detection is in lightly conducting state, Q
2Emitter stage R
4C
4Output low frequency rectified signal in parallel, Q
2Colelctor electrode R
5C
5Output direct-current control voltage in parallel, in same circuit, D
1With Q
2Be the pipe of same semiconductor material, be applicable to the detection control that change in signal strength is bigger.
Description
The present invention relates to adopt in the electricity semiconductor devices to the demodulation of amplitude-modulated oscillation.
In radio communication and instrument measurement, carry out the detection demodulation for the amplitude modulation CF signal, employing diode mode, often to add bias voltage and temperature-compensation circuit, its low frequency signal and DC level output are all lower; Employing triode mode, except temperature-compensation circuit, also to add dc amplification circuit, to finish the automatic control to the prime signal level.The disclosed saturated detector of Chinese patent CN86108783A, take the triode static curve little saturated section, quiescent current is selected to require relatively stricter, too highly will make the curve variation, cross the low CB section that easily enters curve, cause distorted signals, therefore, because components and parts error in value, discreteness and temperature drift will bring very big difficulty to producing in batches to adjust.In addition, saturated detector is owing to be operated in little saturation state, so its input impedance is also lower, requires the prime intermediate frequency amplifier that higher gain is arranged, even will increase amplifying circuit, causes circuit complexity, cost to increase.
Purpose of the present invention provides a kind of diode-triode mixture detector that adapts to batch process, high impedance input, possesses higher direct current amplification output.
Fig. 1 is circuit principle structure figure of the present invention.
Q
1The final stage radio frequency amplifier of general receiving equipment, R
1R
2Q
1Direct current biasing resistance, C
1Q
1The input coupling capacitance, R
3C
3Q
1The self-supporting bias compensation circuit of emitter stage.The invention is characterized in: at final stage radio frequency amplifier NPN pipe Q
1Colelctor electrode and connect two loops to power supply V
+, silicon (or germanium) the semiconductor diode D of NP connection is passed through in a loop
1, be connected to radio frequency L
1C
2The inductance of the parallel resonance tank circuit, and pass through L
1C
2The parallel resonance tank circuit is communicated with dc power anode V
+; Another loop is by silicon (or germanium) PNP transistor Q
2Emitter junction NP, connect R
4C
4Parallel circuit is connected dc power anode V
+, in same circuit, D
1With Q
2Pipe for same semiconductor material.
Can see Q from Fig. 1
1The colelctor electrode DC current of the pipe diode D that flows through
1The pressure drop that produces is just in time with Q
2The pipe base stage is basic identical to the initial conducting voltage of emitter stage, makes Q
2Be in the state of slight conducting, therefore, Q
2Emitter junction have very strong detectability for CF signal.Again because Q
2Be the lightly conducting state, its base stage input current is very little, so Q
2Pipe has the high impedance input, promotes power thereby reduced desired carrier frequency, and makes Q
2Emitter stage R
4C
4Obtain the low frequency rectified signal output of higher level, the detection sensitivity height.Again because D
1And Q
2Pipe adopts same semiconductor material, and their temperature drift is consistent, and Q
2The emitter junction direct-current working volts take from D
1The direct current pressure drop, have each other good temperature compensation function, therefore, do not need cumbersome adjustment just can work, for batch production provides easily condition, Q
2Colelctor electrode R
5C
5Output has the function that DC voltage amplifies, and can reach decades of times with respect to base stage input voltage amplification quantity, and DC voltage passes through R
5C
5Output is in order to the gain of automatic control prime.Only control first high level discharge in the practicality, its dynamic range can reach more than the 80dB.
In the practicality, Q
1Be NPN type silicone tube 9016, Q
2Be positive-negative-positive silicone tube 733, D
1Be silicon diode 1N4148.
Work as Q
1Adopt the positive-negative-positive transistor period of the day from 11 p.m. to 1 a.m, Q
2Then adopt NPN N-type semiconductor N material pipe, D
1And Q
1Need to adopt the pipe of same semiconductor material, Q at this moment
1Collector electrode also connects two loops to power cathode V
-, the formation of its circuit as shown in Figure 2, Q
1With Q
2The transistor of always different conduction forms.
The present invention has that circuit is simple, working stability, input impedance height, direct voltage output are big, control range broad, the higher characteristics of detection sensitivity automatically, is applicable to the detection control that change in signal strength is bigger.
Fig. 3 is the circuit block diagram that the present invention uses in pocket intercom.
Fig. 4 is the electrical schematic diagram that the present invention uses in pocket intercom.
The radiofrequency signal that is received by antenna is through Q
3Height is put, Q
4Mixing, Q
1In broadcast to Q
2Detection is by Q
2The low frequency signal that emitter is exported after the detection is delivered to Q
6Low putting is by Q
2The collector electrode output dc voltage through R
14, C
15, D
2, R
18, R
11Deliver to Q
3Base stage is in order to control Q
3The bias voltage of base stage.Because of Q
3Be the forward agc circuit, change Q
3The bias current of base stage can change Q
3Amplification quantity.When the radiofrequency signal that receives when antenna increases, Q
2The DC level of collector electrode output also increases, and this will cause Q
3The bias current of base stage increases, and impels Q
3Amplification quantity reduce, be unlikely when making the large-signal input and block or amplitude limit, thereby reach the purpose of AGC control.
Claims (4)
1, a kind of diode-triode mixture detector is made up of diode, triode, the radio frequency resonant tank circuit, resistance capacitance, it is characterized in that: at final stage radio frequency amplifier NPN pipe Q
1Colelctor electrode and connect two loops to power supply V
+, silicon (or germanium) the semiconductor diode D of NP connection is passed through in a loop
1, be connected to radio frequency L
1C
2The inductance of the parallel resonance tank circuit, and pass through L
1C
2The parallel resonance tank circuit is communicated with dc power anode V
+Another loop is by silicon (or germanium) PNP transistor Q
2Emitter junction NP, connect R
4C
4Parallel circuit is connected dc power anode V
+In same circuit, D
1With Q
2Pipe for same semiconductor material.
2, diode-triode mixture detector according to claim 1 is characterized in that: Q
2Emitter stage passes through R
4C
4Output low frequency rectified signal in parallel, Q
2Colelctor electrode passes through R
5C
5Output direct-current control voltage in parallel.
3, diode-triode mixture detector according to claim 1 is characterized in that: work as Q
1When adopting positive-negative-positive semi-conducting material pipe, Q
2Then adopt NPN type semi-conducting material pipe, D
1With Q
2Be the pipe of same semiconductor material, Q at this moment
1Colelctor electrode also connects two loops to power cathode V
-
4, diode-triode mixture detector according to claim 1 is characterized in that: Q
2The transistor detection is to be in slight conducting state.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 90108785 CN1021392C (en) | 1990-10-25 | 1990-10-25 | Diode-triode mixture detector |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 90108785 CN1021392C (en) | 1990-10-25 | 1990-10-25 | Diode-triode mixture detector |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1061122A true CN1061122A (en) | 1992-05-13 |
CN1021392C CN1021392C (en) | 1993-06-23 |
Family
ID=4881131
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN 90108785 Expired - Fee Related CN1021392C (en) | 1990-10-25 | 1990-10-25 | Diode-triode mixture detector |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN1021392C (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103278697A (en) * | 2013-05-08 | 2013-09-04 | 北京理工大学 | Wave detection method for improving detection sensitivity and stability of capacitance fuze and detection circuit |
CN104076859A (en) * | 2014-06-30 | 2014-10-01 | 成都赛英科技有限公司 | Microwave temperature compensation detector |
CN113452325A (en) * | 2021-07-24 | 2021-09-28 | 山东大学 | Envelope detection circuit based on Schmitt circuit and working method thereof |
-
1990
- 1990-10-25 CN CN 90108785 patent/CN1021392C/en not_active Expired - Fee Related
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103278697A (en) * | 2013-05-08 | 2013-09-04 | 北京理工大学 | Wave detection method for improving detection sensitivity and stability of capacitance fuze and detection circuit |
CN104076859A (en) * | 2014-06-30 | 2014-10-01 | 成都赛英科技有限公司 | Microwave temperature compensation detector |
CN113452325A (en) * | 2021-07-24 | 2021-09-28 | 山东大学 | Envelope detection circuit based on Schmitt circuit and working method thereof |
Also Published As
Publication number | Publication date |
---|---|
CN1021392C (en) | 1993-06-23 |
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C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C06 | Publication | ||
PB01 | Publication | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C19 | Lapse of patent right due to non-payment of the annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |