CN104639067B - Power amplifier module - Google Patents
Power amplifier module Download PDFInfo
- Publication number
- CN104639067B CN104639067B CN201410632620.7A CN201410632620A CN104639067B CN 104639067 B CN104639067 B CN 104639067B CN 201410632620 A CN201410632620 A CN 201410632620A CN 104639067 B CN104639067 B CN 104639067B
- Authority
- CN
- China
- Prior art keywords
- transistor
- gain
- power amplifier
- current
- bias current
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03G—CONTROL OF AMPLIFICATION
- H03G3/00—Gain control in amplifiers or frequency changers without distortion of the input signal
- H03G3/20—Automatic control
- H03G3/30—Automatic control in amplifiers having semiconductor devices
- H03G3/3036—Automatic control in amplifiers having semiconductor devices in high-frequency amplifiers or in frequency-changers
- H03G3/3042—Automatic control in amplifiers having semiconductor devices in high-frequency amplifiers or in frequency-changers in modulators, frequency-changers, transmitters or power amplifiers
- H03G3/3047—Automatic control in amplifiers having semiconductor devices in high-frequency amplifiers or in frequency-changers in modulators, frequency-changers, transmitters or power amplifiers for intermittent signals, e.g. burst signals
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
- H03F1/0261—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the polarisation voltage or current, e.g. gliding Class A
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
- H03F1/22—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/195—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/211—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03G—CONTROL OF AMPLIFICATION
- H03G1/00—Details of arrangements for controlling amplification
- H03G1/0005—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal
- H03G1/0017—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal the device being at least one of the amplifying solid state elements of the amplifier
- H03G1/0029—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal the device being at least one of the amplifying solid state elements of the amplifier using FETs
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/144—Indexing scheme relating to amplifiers the feedback circuit of the amplifier stage comprising a passive resistor and passive capacitor
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/153—Feedback used to stabilise the amplifier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/18—Indexing scheme relating to amplifiers the bias of the gate of a FET being controlled by a control signal
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/408—Indexing scheme relating to amplifiers the output amplifying stage of an amplifier comprising three power stages
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/20—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F2203/21—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F2203/211—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
- H03F2203/21112—A filter circuit being added at the input of a power amplifier stage
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45138—Two or more differential amplifiers in IC-block form are combined, e.g. measuring amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45528—Indexing scheme relating to differential amplifiers the FBC comprising one or more passive resistors and being coupled between the LC and the IC
Abstract
The present invention provides that size is smaller and the power amplifier module of the rising characteristic of gain adjustable.Power amplifier module includes：Generate the first gain control current generating circuit that the first gain changed according to control voltage controls electric current；Generate the first bias current generative circuit of the first bias current corresponding with the first gain control electric current；Generate the gain-controlled voltage generative circuit of the gain-controlled voltage changed according to control voltage；The first transistor, emitter ground connection provide input signal and the first bias current to its base stage；And second transistor, the second transistor carry out cascode with the first transistor and connect, and gain-controlled voltage is provided to the base stage of the second transistor, the first output signal obtained after being amplified from the output of the collector of the second transistor to input signal.
Description
Technical field
The present invention relates to power amplifier modules.
Background technology
In GSM (Global System for Mobile communications：Global system for mobile communications) (registration
Trade mark), EDGE (Enhanced Data Rates for GSM Evolution：Enhanced data rates for gsm evolution technology) etc.
In communication, when continuously transmitting out the pulse action of data from communication terminal, it is desirable that according to communication standard defined
Waveform characteristic come change send signal (pulse signal) power.
Concrete example is illustrated.Figure 10 is the exemplary figure indicated to the waveform characteristic of pulse action defined.
As shown in Figure 10, the signal level to sending signal is needed to control so that the signal level for sending signal is fallen in the upper limit
(LUL) and lower limit (LDL) between.As the method controlled the level for sending signal, there are following 2 kinds：Make power amplification mould
The gain constant of block is come the method that controls input power；And keep the input power constant to control the gain of power amplifier module
Method.
Existing technical literature
Patent document
Patent document 1：Japanese Patent Laid-Open 2012-95333 bulletins
Patent document 2：No. 2008/0180169 specification of U.S. Patent Application Publication No.
Invention content
The technical problems to be solved by the invention
For example, in patent document 1, power amplification mould is controlled as according to the waveform characteristic to pulse action defined
The structure of the gain of block discloses the structure controlled the bias of power amplifier module.Specifically, disclosing according to tiltedly
Slope voltage VRAMPCome control power amplifier module gain structure.
However, in the structure according to ramp voltage to control the gain of power amplifier module, output signal RFOUTChange
Change amount and ramp voltage VRAMPThe ratio between variable quantity (Δ RFOUT/ΔVRAMP) (in the following, also referred to " slope ".) be possible to increase.This
Sample makes the gain of power amplifier module ramp up period (Figure 10 if slope increases：TUP) when increasing, the rising of gain becomes
Suddenly, it is not easy to change the power of output signal according to waveform characteristic.
Therefore, as disclosed in patent document 2, consider to utilize LDO (Low Drop Output：Low pressure drop exports) it adjusts
Device is saved to control the structure of gain, to replace the structure for controlling the gain of power amplifier module according to ramp voltage.If however,
Using the structure for controlling gain with ldo regulator, then the structure compared with the structure according to ramp voltage to control gain,
Chip size generally increases.
The present invention is completed in view of said circumstances, it is intended that it is smaller and can adjust gain to provide a kind of size
Rising characteristic power amplifier module.
Technical scheme applied to solve the technical problem
Power amplifier module involved by an aspect of of the present present invention includes：First gain controls current generating circuit, this
One gain control current generating circuit generates the first gain changed according to control voltage and controls electric current；First bias current is given birth to
At circuit, which generates the first bias current corresponding with the first gain control electric current；Gain control
Voltage generation circuit processed, the gain-controlled voltage generative circuit generate the gain-controlled voltage changed according to control voltage；The
One transistor, the emitter ground connection of the first transistor provide input signal and the first bias to the base stage of the first transistor
Electric current；And second transistor, which carries out cascode with the first transistor and connect, to the second transistor
Base stage provides gain-controlled voltage, first obtained after being amplified from the output of the collector of the second transistor to input signal
Output signal.
The effect of invention
According to the present invention, it can provide that size is smaller and the power amplifier module of the rising characteristic of gain adjustable.
Description of the drawings
Fig. 1 is the configuration example for indicating the transmission unit including the power amplifier module comprising an embodiment of the invention
Figure.
Fig. 2 is an exemplary figure of the structure for indicating power amplifier module.
Fig. 3 is an exemplary block diagram of the structure for indicating biasing control voltage.
Fig. 4 is an exemplary figure of the structure for indicating power amplifier.
Fig. 5 A are an exemplary figures for indicating the relationship between control voltage and gain control electric current.
Fig. 5 B are an exemplary figures for indicating the relationship between control voltage and gain-controlled voltage.
Fig. 6 is another the exemplary figure for the structure for indicating power amplifier.
Fig. 7 is another the exemplary figure for the structure for indicating power amplifier.
Fig. 8 is another the exemplary figure for the structure for indicating power amplifier.
Fig. 9 is an exemplary emulation knot for indicating the relationship between in power amplifier module, output signal and slope
Fruit.
Figure 10 is the exemplary figure indicated to the waveform characteristic of pulse action defined.
Specific implementation mode
Hereinafter, being illustrated to one embodiment of the present invention with reference to attached drawing.Fig. 1 is a reality for indicating to include the present invention
Apply the figure of the configuration example of the transmission unit including the power amplifier module of mode.The shifting such as in mobile phone of transmission unit 100
In dynamic communication equipment, for sending the various signals such as audio or data to base station.In addition, mobile communication equipment also have for from
The receiving unit of base station received signal, but omit the description here.
As shown in Figure 1, transmission unit 100 includes baseband processing section 101, modulation portion 102, power amplifier module 103, front end
Portion 104 and antenna 105 are constituted.
Baseband processing section 101 executes Base-Band Processing to input signal.In addition, the output control signal of baseband processing section 101
RAMP, the signal are used to, according to the waveform characteristic to pulse action defined, control the gain of power amplifier module 103.
Modulation portion 102 is based on the modulation systems such as GSM (registered trademark), EDGE, is modulated to baseband signal, generation is used for
Wireless frequency (the RF transmitted wirelessly：Radio frequency) signal.RF signals are, for example, hundreds of MHz to several GHz or so.
Power amplifier module 103 is by RF signals (RFIN) power amplification to the level being sent to needed for base station, and export defeated
Go out signal RFOUT.In addition, based on the control signal RAMP provided from baseband processing section 101, the gain to power amplifier module 103
It is controlled, complies with the waveform characteristic for pulse action of such as communication standard defined.
Front end 104 is filtered output signal, or with switched between the reception signal that is received from base station.
The signal exported from front end 104 is sent to base station by antenna 105.
Fig. 2 is an exemplary figure of the structure for indicating power amplifier module 103.As shown in Fig. 2, power amplifier module
103 include power amplifier 200, filter 201, operational amplifier 202, directional coupler 203, wave detector 204, differential amplification
Device 205, error amplifier 206, bias control circuit 207 and resistance 208~210 are constituted.
The gain-controlled voltage V for controlling gain is provided to power amplifier 200BAnd gain control electric current IB1~
IB3.Power amplifier 200 with gain-controlled voltage VBAnd gain control electric current IB1~IB3Corresponding gain, to what is inputted
RF signals (RFIN) power be amplified, and output signal output RFOUT.Detailed construction about power amplifier 200 will be
Hereinafter illustrate.
Filter 201 exports the control signal RAMP (discrete-time analogues to the gain for controlling power amplifier 200
Signal) smoothed obtained from control voltage VRAMP.Control signal RAMP is controlled so that output signal RFOUTSuch as
It is consistent with the waveform characteristic for pulse action of communication standard defined.
Operational amplifier 202 and resistance 208,209 constitute non-inverted amplifying circuit.That is, from the output of operational amplifier 202
Terminal output gain controls voltage VB, gain-controlled voltage VBAccording to control voltage VRAMPAnd it changes.
Directional coupler 203 extracts the output signal RF exported from power amplifier 200OUTA part, output this to
Resistance 210 as load.
Wave detector 204 carries out detection to the signal extracted by directional coupler 203, is input to differential amplifier circuit
205 non-inverting input terminal.The voltage exported from wave detector 204 becomes and output signal RFOUTCorresponding level.
Differential amplifier 205 is to being input to the voltage of non-inverting input terminal and being input to the imbalance electricity of inversing input terminal
Press VOFFDifference be amplified, output detection voltage VDET.Be input to non-inverting input terminal voltage be and output signal RFOUT
Corresponding level, detection voltage VDETAlso with input signal RFOUTLevel it is corresponding.
Error amplifier 206 exports the control voltage V to being input to non-inverting input terminalRAMPIt is inputted with reversion is input to
The detection voltage V of terminalDETDifference (error) be amplified the voltage V obtained fromAPC。
Bias control circuit 207 is based on voltage VAPC, export the gain control of the gain for controlling power amplifier 200
Circuit IB1~IB3.Fig. 3 is an exemplary block diagram of the structure for indicating bias control circuit 207.As shown in figure 3, bias voltage control
Circuit 207 includes that (the first gain controls current generating circuit~third gain control to gain control current generating circuit 300~302
Current generating circuit processed).Gain control current generating circuit 300~302 is based respectively on voltage VAPC, output gain control electric current
IB1~IB3.Specifically, as shown in figure 3, control electric current IB1~IB3With voltage VAPC(that is, with VRAMP) with conic section side
Formula changes.The control electric current I generated in this wayB1~IB3For at different levels in 3 grades of amplifying circuits to constituting power amplifier 200
Bias current is controlled.In addition, based on transistor size etc. at different levels, suitably setting controls the I of electric currentB1~IB3Electricity
Flow.In addition, control electric current IB1~IB3Variation characteristic be not limited to conic section, can be other curves such as linear.
In structure shown in Fig. 2, the non-inverted amplifying circuit being made of operational amplifier 202 and resistance 208,209 (increases
Benefit control voltage generation circuit) feed forward circuit is constituted, which is based on control voltage VRAMPTo export for controlling power
The gain-controlled voltage V of the gain of amplifier 200B.If for example, control voltage VRAMPRise, then gain-controlled voltage VBRise,
The gain of power amplifier 200 rises.
In addition, in structure shown in Fig. 2, by directional coupler 203, resistance 210, wave detector 204, differential amplifier 205,
Error amplifier 206 and bias control circuit 207 constitute feedback circuit, which exports for controlling power amplifier
The gain control electric current I of 200 gainB1~IB3So that output signal RFOUTAs with control voltage VRAMPCorresponding level.Example
Such as, if control voltage VRAMPRise, then voltage VAPCRise, gain controls electric current IB1~IB3Increase, the increasing of power amplifier 200
Benefit rises.
Fig. 4 is an example i.e. figure of the structure of power amplifier 200A for indicating power amplifier 200.As shown in figure 4,
Power amplifier 200A includes HBT chips 400A, capacitor 401~404, inductor 405~407 and match circuit 408.
HBT chips 400A is the integrated circuit for including Heterojunction Bipolar Transistors (HBT).In addition, in present embodiment
In, transistor is HBT, but transistor is not limited to HBT.HBT chips 400A is to the RF signals (RF that is inputted via capacitor 401IN)
It is amplified, and via 408 output signal output RF of match circuitOUT.As shown in figure 4, HBT chips 400A includes NPN transistor
(in the following, being referred to simply as " transistor ") 410~422, resistance 430~435 and capacitor 440~442.
HBT chips 400A includes 3 grades of amplifying circuits.First order amplifying circuit includes transistor 410,411, second level amplification
Circuit includes transistor 412, and third level amplifying circuit includes transistor 413.In addition, in the present embodiment, showing by 3 grades
Amplifying circuit constitutes the example of power amplifier, but the series of the amplifying circuit of power amplifier is without being limited thereto.
First order amplifying circuit is by the transistor 410 (the first transistor) and transistor 411 that are connected in a manner of cascode
(second transistor) is constituted.Specifically, the emitter of transistor 410 is grounded via resistance 431, the emitter of transistor 411
It is connected with the collector of transistor 410.In addition, transistor 410,411 can for example have identical size.
RF signals (RFIN) base stage of transistor 410 is input to via capacitor 401 and resistance 430.In addition, to transistor
410 base stage input and gain control electric current IB1Corresponding bias current.Voltage is controlled to the base stage input gain of transistor 411
VB.In addition, providing supply voltage V to the collector of transistor 411 via inductor 405CC。
The first order amplifying circuit being made of transistor 410 and 411 is to being input to the input signal of the base stage of transistor 410
It is amplified, the signal obtained after the output amplification of the collector of transistor 411.
Second level amplifying circuit is made of transistor 412 (third transistor).The emitter of transistor 412 is grounded, and is passed through
Supply voltage V is provided from inductor 406 to the collector of transistor 412CC.To the input first order amplification of the base stage of transistor 412
The output of circuit is as its input signal.In addition, to the input of the base stage of transistor 412 and gain control electric current IB2Corresponding bias
Electric current.
The second level amplifying circuit being made of transistor 412 carries out the input signal for being input to the base stage of transistor 412
Amplification, the signal obtained after the output amplification of the collector of transistor 412.In addition, transistor 412 base-collector junction it
Between the resistance 435 being connected in series with and capacitor 441 are set, as the negative-feedback circuit for making amplification motion stability.
Third level amplifying circuit is made of transistor 413 (the 5th transistor).The emitter of transistor 413 is grounded, and is passed through
Supply voltage V is provided from inductor 407 to the collector of transistor 413CC.Amplify to the base stage of the transistor 413 input second level
The output of circuit is as its input signal.In addition, to the input of the base stage of transistor 413 and gain control electric current IB3Corresponding bias
Electric current.
The third level amplifying circuit being made of transistor 413 carries out the input signal for being input to the base stage of transistor 413
Amplification, the signal obtained after the output amplification of the collector of transistor 413.
The transistor 415 that the transistor 414 of diode fashion connection is connect with diode fashion is connected in series with.Transistor
420 base stage is connected with the collector of transistor 414.In addition, to the base stage input gain of transistor 420 control electric current IB1。
In addition, the emitting stage of transistor 420 is connected via resistance 432 with the base stage of transistor 410.Transistor 414,415,420 and
Resistance 432, which will be constituted, to control electric current I with gainB1Corresponding bias current is supplied to the bias current life of the base stage of transistor 410
At circuit.
Similarly, transistor 416,417,421 and resistance 433, which will be constituted, to control electric current I with gainB2Corresponding bias current
It is supplied to the bias current generative circuit of the base stage of transistor 412.In addition, transistor 418,419,422 and the composition of resistance 434 will
With gain control electric current IB3Corresponding bias current is supplied to the bias current generative circuit of the base stage of transistor 413.
As described above, the transistor 410,411 that first order amplifying circuit is connected by cascode mode is constituted.Moreover, to
The base stage input of transistor 410 and gain control electric current IB1Corresponding bias current, the base stage input gain control to transistor 411
Voltage V processedB.Thus, utilize gain control electric current IB1And gain-controlled voltage VBThe two controls the increasing of first order amplifying circuit
Benefit.
Fig. 5 A are to indicate control voltage VRAMPWith gain control electric current IB1Between relationship an exemplary figure.Such as Fig. 5 A
Shown, gain controls electric current IB1With control voltage VRAMPChanged in a manner of conic section.Fig. 5 B are to indicate control voltage VRAMP
With gain-controlled voltage VBBetween relationship an exemplary figure.As shown in Figure 5 B, gain-controlled voltage VBWith control voltage
VRAMPLinearly change.
As shown in Figure 5A, gain control electric current IB1With control voltage VRAMPRise and increase, therefore, if control voltage
VRAMPRise, then the gain of first order amplifying circuit rises.In addition, as shown in Figure 5 B, gain-controlled voltage VBWith control voltage
VRAMPRise and rise, therefore, if control voltage VRAMPRise, then the gain of first order amplifying circuit rises.
Herein, in control voltage VRAMPLower region, gain-controlled voltage VBIt is relatively low, therefore, to transistor 410
The voltage that collector terminal provides is lower.Thus, constitute first order amplifying circuit and only with gain control with 1 transistor 410 is utilized
Electric current I processedB1It is compared the case where controlling gain, it can be in control voltage VRAMPLower region can reduce first order amplifying circuit
Gain.That is, in control voltage VRAMPLower region, by slope (Δ RFOUT/ΔVRAMP) reduce, it can be by power amplifier
The gain rising of 200A slows down.As a result, for example, in the pulse action of GSM (registered trademark), EDGE etc. so that according to communication
The waveform characteristic of prescribed by standard changes output signal RFOUTThe control of power become easy.
Fig. 6 is another example i.e. figure of the structure of power amplifier 200B for indicating power amplifier 200.In addition, right
The identical element of power amplifier 200A as shown in fig. 4 marks identical label and omits the description.
Power amplifier 200B is on the basis of the structure of power amplifier 200A, including resistance 600 and capacitor 601.
Resistance 600 and capacitor 601 are connected in series with, and are arranged between the base stage and the collector of transistor 411 of transistor 410.Resistance
600 and capacitor 601 constitute the amplification motion stability of first order amplifying circuit for making to be made of transistor 410 and 411
Negative-feedback circuit.
Herein, such as first order amplifying circuit is set with the general structure being equal with second level amplifying circuit, that is, only have
There is 1 transistor, and is provided with the negative-feedback circuit being equal with resistance 435 and capacitor 441.By first order amplifying circuit from this
The general structure (single structure) of kind is changed to be substituted for the structure (cascode for the transistor 410,411 that cascode mode connects
Cobasis structure) in the case of, be not arranged between the base-collector junction of transistor 410 but the base stage of transistor 410 with it is brilliant
Resistance 600 and capacitor 601 are set between the collector of body pipe 411, so as to inhibit first order amplifying circuit output resistance
Resistance.Therefore, change is designed from above-mentioned general structure to be easier.
Fig. 7 is another example i.e. figure of the structure of power amplifier 200C for indicating power amplifier 200.In addition, right
Element identical with power amplifier 200B shown in fig. 6 marks identical label and omits the description.
Power amplifier 200C is on the basis of the structure of power amplifier 200B, including resistance 700 and capacitor 701.
One end of resistance 700 and gain-controlled voltage VBInput terminal be connected, the other end is connected with the base stage of transistor 411.
One end of capacitor 701 is connected between resistance 700 and the base stage of transistor 411, other end ground connection.Resistance 700 and capacitor
701 constitute low-pass filter.
In this way, via low-pass filter by gain-controlled voltage VBIt is input to the base stage of transistor 411, so as to inhibit to increase
Benefit control voltage VBNoise caused by power amplifier 200C gain fluctuation.
Fig. 8 is another example i.e. figure of the structure of power amplifier 200D for indicating power amplifier 200.In addition, right
Element identical with power amplifier 200B shown in fig. 6 marks identical label and omits the description.
Power amplifier 200D is on the basis of the structure of power amplifier 200B, including (the 4th crystal of transistor 800
Pipe).Transistor 412,800 is connected in the same manner as first order amplifying circuit in a manner of cascode, is become by gain-controlled voltage
VBWith gain control electric current IB2To control the structure of gain.As a result, in the same manner as first order amplifying circuit, in control voltage VRAMP
Lower region can reduce the gain of second level amplifying circuit.Thus, in control voltage VRAMPLower region, by slope (Δ
RFOUT/ΔVRAMP) further decrease, the gain of power amplifier 200D can be risen and further be slowed down.
In addition, power amplifier 400D can be also arranged in the same manner as power amplifier 400C shown in Fig. 7 by 700 He of resistance
The low-pass filter that capacitor 701 is constituted.
Fig. 9 be indicate in power amplifier module, output signal RFOUTWith slope (Δ RFOUT/ΔVRAMP) between relationship
One exemplary measured result.In fig.9, solid line is the power amplifier module 103 for including power amplifier 200C shown in Fig. 7
Measured result.In addition, the first order amplifying circuit that dotted line is power amplifier 200C only has transistor 410, general structure
The measured result of the power amplifier module of (full grade is single).
As shown in the dotted line of Fig. 9, in the single structure of full grade, in output signal RFOUTLower region, slope are larger.Cause
This, in the single structure of full grade, for example, when the gain for making power amplifier module increases during ramping up, gain it is upper
It rises steepening, be difficult to be consistent with the waveform characteristic of communication standard defined to control output signal RFOUT。
On the other hand, shown in solid such as Fig. 9, using power amplifier 200C shown in Fig. 7 structure, that is, using
In the case that first order amplifying circuit is the structure for the transistor 410,411 that cascode mode connects, in output signal RFOUT
Lower region, slope become smaller.Therefore, in the structure that first order amplifying circuit is connected using cascode, for example,
When the gain of power amplifier module being made to increase during ramping up, the rising of gain slows down, is easy and communication standard defined
Waveform characteristic is consistent to control output signal RFOUT。
More than, present embodiment is illustrated.As described above, according to the present embodiment, first order amplifying circuit is adopted
With cascode structure, with control voltage VRAMPCorresponding gain control electric current IBControl the transistor of subordinate, and with control
Voltage V processedRAMPCorresponding gain-controlled voltage VBSupervisory transistor is controlled, so as to the rising characteristic of adjust gain.This
Outside, the size of power amplifier module can be made also to want small compared with the case where using ldo regulator.
In addition, for example, as shown in figure 3, making gain control electric current IB1With control voltage VRAMPBecome in a manner of conic section
Change, to control electric current I with gainB1It is compared with the case where linear change, gain rising characteristic slows down.
In addition, gain control electric current IB1Variation characteristic be not limited to conic section, by making to follow control voltage VRAMP's
Gain controls electric current IB1Increment rate press ladder-like increase, can also obtain same effect.Specifically, gain control electric current generates
Circuit 300 generates gain control electric current I as followsB1, control voltage VRAMPGain control in the case of for the first level
Electric current IB1Increment rate than control voltage VRAMPFor second electrical level (>First level) in the case of gain control electric current IB1Increasing
Rate is added to want small.
In addition, for example, as shown in fig. 6, in first order amplifying circuit, in base stage and the transistor 411 of transistor 410
Negative-feedback circuit is set between collector, to be changed to the feelings of cascode structure from single structure in first order amplifying circuit
Under condition, the impedance variations of the output of first order amplifying circuit can be inhibited.
In addition, for example, as shown in fig. 7, providing gain-controlled voltage V via low-pass filterB, so as to inhibit gain control
Voltage V processedBNoise caused by power amplifier module gain fluctuation.
In addition, for example, as shown in figure 8, cascode structure is also used to second level amplifying circuit, so as to be easier to adjust
The rising characteristic of whole gain.
In addition, present embodiment understands the present invention for facilitating, and it is not used to limit and explains the present invention.It is not departing from
Under the premise of the invention thought of the present invention, the present invention can be changed/be improved, and the same invention of the present invention also includes
Within the present invention.
Label declaration
100 transmission units
101 baseband processing sections
102 modulation portions
103 power amplifier modules
104 front ends
105 antennas
200 power amplifiers
201 filters
202 operational amplifiers
203 directional couplers
204 wave detectors
205 differential amplifiers
206 error amplifiers
207 bias control circuits
208~210,430~435,600,700 resistance
300~302 gains control current generating circuit
400A~400D HBT chips
401~404,440~442,601,701 capacitors
405~407 inductors
408 match circuits
410~422,800 NPN transistors
Claims (11)
1. a kind of power amplifier module, which is characterized in that including：
First gain controls current generating circuit, and first gain control current generating circuit generates according to control voltage and changes
The first gain control electric current；
First bias current generative circuit, the first bias current generative circuit generate corresponding to first gain control electric current
The first bias current；
Gain-controlled voltage generative circuit, the gain-controlled voltage generative circuit generate the increasing changed according to the control voltage
Benefit control voltage；
The first transistor, the emitter ground connection of the first transistor provide input signal and institute to the base stage of the first transistor
State the first bias current；And
Second transistor, which carries out cascode with the first transistor and connect, to the second transistor
Base stage provides the gain-controlled voltage, is obtained after being amplified from the output of the collector of the second transistor to the input signal
The first output signal arrived,
The first gain control current generating circuit generates the first gain control electric current as follows, that is, the control
The increment rate of first gain control electric current when voltage processed is the first level is controlled than described when voltage is second electrical level
The increment rate of the first gain control electric current wants small, and the second electrical level is higher than first level,
The gain-controlled voltage generative circuit is so that the gain-controlled voltage becomes along with the control voltage linear
The mode of change generates the gain-controlled voltage.
2. power amplifier module as described in claim 1, which is characterized in that
First gain control current generating circuit generates the first gain control electric current as follows, that is, described the
One gain controls electric current as the control voltage carries out conic section variation.
3. power amplifier module as claimed in claim 1 or 2, which is characterized in that
Further include negative-feedback circuit, which is arranged brilliant in the collector of the second transistor and described first
Between the base stage of body pipe.
4. power amplifier module as claimed in claim 1 or 2, which is characterized in that
Further include low-pass filter, which is connected with the base stage of the second transistor.
5. power amplifier module as claimed in claim 3, which is characterized in that
Further include low-pass filter, which is connected with the base stage of the second transistor.
6. the power amplifier module as described in claims 1 or 2 or 5, which is characterized in that further include：
Second gain control current generating circuit, second gain control current generating circuit generate according to the control voltage and
Second gain of variation controls electric current；
Second bias current generative circuit, the second bias current generative circuit generate corresponding to second gain control electric current
The second bias current；And
Third transistor, the emitter ground connection of the third transistor provide first output to the base stage of the third transistor
Signal and second bias current, after the output of the collector of the third transistor is amplified first output signal
The second obtained output signal.
7. power amplifier module as claimed in claim 3, which is characterized in that further include：
Second gain control current generating circuit, second gain control current generating circuit generate according to the control voltage and
Second gain of variation controls electric current；
Second bias current generative circuit, the second bias current generative circuit generate corresponding to second gain control electric current
The second bias current；And
Third transistor, the emitter ground connection of the third transistor provide first output to the base stage of the third transistor
Signal and second bias current, after the output of the collector of the third transistor is amplified first output signal
The second obtained output signal.
8. power amplifier module as claimed in claim 4, which is characterized in that further include：
Second gain control current generating circuit, second gain control current generating circuit generate according to the control voltage and
Second gain of variation controls electric current；
Second bias current generative circuit, the second bias current generative circuit generate corresponding to second gain control electric current
The second bias current；And
Third transistor, the emitter ground connection of the third transistor provide first output to the base stage of the third transistor
Signal and second bias current, after the output of the collector of the third transistor is amplified first output signal
The second obtained output signal.
9. power amplifier module as claimed in claim 6, which is characterized in that
Further include the 4th transistor, the 4th transistor carries out cascode with the third transistor and connect, to the 4th crystalline substance
The base stage of body pipe provides the gain-controlled voltage, and second output signal is exported from the collector of the 4th transistor.
10. power amplifier module as claimed in claim 6, which is characterized in that further include：
Third gain control current generating circuit, the third gain control current generating circuit generate according to the control voltage and
The third gain of variation controls electric current；
Third bias current generative circuit, the third bias current generative circuit generate corresponding to third gain control electric current
Third bias current；And
5th transistor, the emitter ground connection of the 5th transistor provide second output to the base stage of the 5th transistor
Signal and the third bias current, after the output of the collector of the 5th transistor is amplified second output signal
Obtained third output signal.
11. power amplifier module as claimed in claim 9, which is characterized in that further include：
Third gain control current generating circuit, the third gain control current generating circuit generate according to the control voltage and
The third gain of variation controls electric current；
Third bias current generative circuit, the third bias current generative circuit generate corresponding to third gain control electric current
Third bias current；And
5th transistor, the emitter ground connection of the 5th transistor provide second output to the base stage of the 5th transistor
Signal and the third bias current, after the output of the collector of the 5th transistor is amplified second output signal
Obtained third output signal.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013-233027 | 2013-11-11 | ||
| JP2013233027A JP5854289B2 (en) | 2013-11-11 | 2013-11-11 | Power amplification module |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104639067A CN104639067A (en) | 2015-05-20 |
| CN104639067B true CN104639067B (en) | 2018-07-17 |
Family
ID=53043293
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410632620.7A Active CN104639067B (en) | 2013-11-11 | 2014-11-11 | Power amplifier module |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US9559654B2 (en) |
| JP (1) | JP5854289B2 (en) |
| CN (1) | CN104639067B (en) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10020786B2 (en) * | 2015-07-14 | 2018-07-10 | Murata Manufacturing Co., Ltd. | Power amplification module |
| JP2017028342A (en) * | 2015-07-15 | 2017-02-02 | 株式会社村田製作所 | Power amplification module |
| US9520836B1 (en) * | 2015-08-13 | 2016-12-13 | Raytheon Company | Multi-stage amplifier with cascode stage and DC bias regulator |
| JP2017183839A (en) * | 2016-03-28 | 2017-10-05 | 株式会社村田製作所 | Power amplifier circuit |
| JP2018050200A (en) | 2016-09-21 | 2018-03-29 | 株式会社村田製作所 | Power Amplifier Module |
| US10476454B2 (en) | 2016-09-21 | 2019-11-12 | Murata Manufacturing Co., Ltd. | Power amplifier module |
| CN106878585B (en) * | 2017-01-19 | 2024-02-06 | 杭州瑞盟科技股份有限公司 | High-definition HD/full-definition FHD selectable video filter driver |
| TWI649961B (en) * | 2017-08-22 | 2019-02-01 | 立積電子股份有限公司 | Power amplifier and protection circuit for use in rf active circuit |
| KR102075951B1 (en) | 2017-09-29 | 2020-02-11 | 가부시키가이샤 무라타 세이사쿠쇼 | Power amplifier circuit |
| US10715093B2 (en) * | 2018-03-09 | 2020-07-14 | Murata Manufacturing Co., Ltd. | Power amplifier module |
| JP2019201290A (en) | 2018-05-15 | 2019-11-21 | 株式会社村田製作所 | Power amplifier |
| CN111049484B (en) * | 2018-10-12 | 2023-03-28 | 株式会社村田制作所 | Power amplifying circuit |
| CN110855254B (en) * | 2019-11-15 | 2023-06-20 | 唯捷创芯(天津)电子技术股份有限公司 | Radio frequency power amplifier, chip and communication terminal |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1628412A (en) * | 2002-01-31 | 2005-06-15 | 高通股份有限公司 | Variable impedance load for a variable gain radio frequency amplifier |
| US8150343B2 (en) * | 2009-09-21 | 2012-04-03 | Broadcom Corporation | Dynamic stability, gain, efficiency and impedance control in a linear/non-linear CMOS power amplifier |
| CN102859867A (en) * | 2010-04-19 | 2013-01-02 | 阿尔卡特朗讯 | Power amplifier with low noise figure and voltage variable gain |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR0157206B1 (en) * | 1996-03-28 | 1999-02-18 | 김광호 | Low-noise amplifier |
| JP2005005944A (en) * | 2003-06-11 | 2005-01-06 | Sony Corp | Amplifier circuit and radio communication device |
| JP2006303850A (en) * | 2005-04-20 | 2006-11-02 | Renesas Technology Corp | High frequency power amplifier circuit and wireless communication terminal |
| KR101451455B1 (en) | 2007-01-25 | 2014-10-15 | 스카이워크스 솔루션즈, 인코포레이티드 | Multimode amplifier for operation in linear and saturated modes |
| JP5245887B2 (en) * | 2009-02-09 | 2013-07-24 | 富士通セミコンダクター株式会社 | amplifier |
| US8319549B2 (en) * | 2009-12-09 | 2012-11-27 | California Institute Of Technology | Self-healing power amplifier: methods and apparatus |
| US8749309B2 (en) * | 2010-12-05 | 2014-06-10 | Rf Micro Devices (Cayman Islands), Ltd. | Gate-based output power level control power amplifier |
| JP5283746B2 (en) | 2011-12-21 | 2013-09-04 | ルネサスエレクトロニクス株式会社 | Transmitter and RF transmission signal processing circuit for use therein |
| JP5328975B2 (en) * | 2012-12-19 | 2013-10-30 | ルネサスエレクトロニクス株式会社 | RF power module |
-
2013
- 2013-11-11 JP JP2013233027A patent/JP5854289B2/en active Active
-
2014
- 2014-10-22 US US14/520,467 patent/US9559654B2/en active Active
- 2014-11-11 CN CN201410632620.7A patent/CN104639067B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1628412A (en) * | 2002-01-31 | 2005-06-15 | 高通股份有限公司 | Variable impedance load for a variable gain radio frequency amplifier |
| US8150343B2 (en) * | 2009-09-21 | 2012-04-03 | Broadcom Corporation | Dynamic stability, gain, efficiency and impedance control in a linear/non-linear CMOS power amplifier |
| CN102859867A (en) * | 2010-04-19 | 2013-01-02 | 阿尔卡特朗讯 | Power amplifier with low noise figure and voltage variable gain |
Also Published As
| Publication number | Publication date |
|---|---|
| US9559654B2 (en) | 2017-01-31 |
| CN104639067A (en) | 2015-05-20 |
| JP2015095708A (en) | 2015-05-18 |
| JP5854289B2 (en) | 2016-02-09 |
| US20150130537A1 (en) | 2015-05-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104639067B (en) | Power amplifier module | |
| CN1838530B (en) | High frequency power amplifier circuit | |
| JP5854372B2 (en) | Power amplification module | |
| US11398805B2 (en) | Power amplification module | |
| US10298191B2 (en) | Power amplifier module | |
| TWI509979B (en) | Electronic system, radio frequency power amplifier and method for dynamic adjusting bias point. | |
| CN208337517U (en) | Power amplification circuit | |
| CN101026360A (en) | Radio frequency power amplifying module with hetero junction bipolar transistor | |
| US11515840B2 (en) | Power amplifier | |
| CN106357226A (en) | Power amplification module | |
| CN106067767B (en) | Power amplifier module | |
| JP2006094076A (en) | High-frequency power amplifier circuit and electronic component for high-frequency power amplification | |
| TWI501543B (en) | Electronic system, radio frequency power amplifier and method for self-adjusting bias point | |
| US7782133B2 (en) | Power amplifier with output power control | |
| CN109768775B (en) | Power amplifying circuit | |
| CN110034731B (en) | Power amplifying circuit | |
| CN110492853A (en) | Power amplifier | |
| CN103888086B (en) | Self method of adjustment of electronic system, radio-frequency power amplifier and its bias point | |
| US11456712B2 (en) | Power amplifier device | |
| US20180019708A1 (en) | Detector circuit | |
| CN101262258B (en) | Demodulation device for microwave signal transmitter | |
| JP2006333107A (en) | Bias circuit and power amplifier using the same, and radio communication device | |
| KR102134892B1 (en) | supply modulator and power amplifier having thereof | |
| JP2005348312A (en) | Electronic component for high frequency power amplification |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |