CN106097912B - The manufacturing method and display module of a kind of micron of LED glass substrate display module - Google Patents
The manufacturing method and display module of a kind of micron of LED glass substrate display module Download PDFInfo
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- CN106097912B CN106097912B CN201610638687.0A CN201610638687A CN106097912B CN 106097912 B CN106097912 B CN 106097912B CN 201610638687 A CN201610638687 A CN 201610638687A CN 106097912 B CN106097912 B CN 106097912B
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
- G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
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Abstract
The present invention relates to the manufacturing methods and display module of a kind of micron of LED glass substrate display module, which comprises prepares the urn glass substrate with multiple filling slots arranged in parallel；In filling slot quantification filling glass sealing-in solder；The melting temperature of glass sealing solder is lower than 260 DEG C of urn glass substrate melting temperature or more；Glass sealing solder is heated, makes glass sealing solder in molten state；The die bond template for being mounted with inverted structure LED wafer array and urn glass substrate are aligned；Under the conditions of set temperature, the LED wafer in inverted structure LED wafer array is loaded into the filling slot of urn glass substrate by glass sealing solder, and solidify connection；Gold-tin alloy Eutectic Layer is deposited on the electrode of LED wafer；In eutectic furnace, the urn glass substrate for being loaded onto LED wafer is welded in control circuit board to get micron LED glass substrate display module is arrived by gold-tin alloy Eutectic Layer.
Description
Technical field
The present invention relates to the manufacturing method of semiconductor field more particularly to a kind of micron of LED glass substrate display module and
Display module.
Background technique
Develop to today in traditional semiconductor display product, high density field we habituation has been defined as picture
Plain spacing is less than the display of 1.0mm.However traditional LED display technique has already appeared bottleneck in high density field.
Because being limited by the traditional structure of LED light source, while material knot involved in the mould group of processing is integrated after being limited by
Structure, for example the driving capacity of traditional constant-current source encapsulation and structure, the loose material bring of traditional FR4PCB plate are integrated into
The thermal instability problem and flatness strength problem of product, and be spliced into required for large screen for installation and be molded mask
With plastic housing etc., LED display technique is all seriously limit in the breakthrough and application in high density field
Summary of the invention
The object of the present invention is to provide the manufacturing method and display module of a kind of micron of LED glass substrate display module, works
Skill simple and stable is particularly suitable for requiring the high-resolution requirement of small size chip spacing.Display module can according to need
It carries out assembled, may be implemented small to 8 × 8, arrive the image display of unconfined resolution ratio greatly.Pel spacing can be according to need
Self-definition design is wanted, range flexible in application is wide.
In a first aspect, the present invention provides the manufacturing methods of a kind of micron of LED glass substrate display module, comprising:
Prepare urn glass substrate；There are multiple filling slots arranged in parallel on the urn glass substrate；The filling
Slot is the stupefied slot of micron order with trapezoidal sectional shape；
In the filling slot quantification filling glass sealing-in solder；The melting temperature of the glass sealing solder is lower than described
260 DEG C of urn glass substrate melting temperature or more；
The glass sealing solder is heated, makes the glass sealing solder in molten state；
The die bond template for being mounted with inverted structure LED wafer array and the urn glass substrate are aligned, the LED is made
Spacing between the line space of cell array and the filling slot is corresponding；
LED wafer in the inverted structure LED wafer array is loaded into the filling slot of the urn glass substrate；
Under the conditions of set temperature, the LED wafer is carried out in the filling slot by the glass sealing solder
Solidification connection；
Gold-tin alloy Eutectic Layer is deposited on the electrode of the LED wafer；
In eutectic furnace, the urn glass substrate for being loaded onto the LED wafer passes through the gold-tin alloy Eutectic Layer
It is welded in control circuit board to get the micron LED glass substrate display module is arrived.
Preferably, the urn glass substrate for preparing specifically includes:
Glass substrate original piece is cleaned, is dried；
The glass substrate original piece is seized on both sides by the arms between the upper mold and lower die of mold；Wherein the face of seizing on both sides by the arms of the upper mold is flat
Face connects with the first surface of the glass substrate original piece；The trapezoidal stage body of the lower die seized on both sides by the arms on face with multiple rows of protrusion,
Connect with the second surface of the glass substrate original piece；
The glass substrate original piece seized on both sides by the arms is placed in forming furnace, fixed pressure counterweight is added in the upper mold,
Molding is molded under the conditions of preset temperature curve, obtains the urn glass substrate.
Preferably, described by the die bond template for being mounted with inverted structure LED wafer array and the urn glass substrate pair
Position specifically:
According to the contraposition mark in the die bond template, inverted structure LED wafer array will be mounted on kind of brilliant furnace
Die bond template is aligned with the urn glass substrate.
Preferably, described by the die bond template for being mounted with inverted structure LED wafer array and the urn glass substrate
Before contraposition, the method also includes:
By more flip LED chips according to design pixel demand, with spacing corresponding with the filling slot arrangement die bond in
In the die bond template；Wherein the electrode side of the LED wafer connects with the die bond template.
Preferably, solidification connection of the LED wafer in the filling slot is being carried out by the glass sealing solder
Later, the method also includes:
It anneals by preset temperature curve to the urn glass substrate for being loaded into the LED wafer.
Preferably, the control circuit board includes:
Laminated circuit board with Eutectic Layer.
It is further preferred that the control circuit board further include: be welded in interface element on the laminated circuit board, dissipate
Hot bracket and drive control chip.
Second aspect, the embodiment of the invention provides a kind of using the micro- of the manufacture of manufacturing method described in above-mentioned first aspect
Rice LED glass substrate display module.
The manufacturing method and display module of a kind of micron of LED glass substrate display module provided by the invention, simple process
Stablize, is particularly suitable for requiring the high-resolution requirement of small size chip spacing.Display module, which can according to need, is spelled
Dress, may be implemented small to 8 × 8, arrive the image display of unconfined resolution ratio greatly.Pel spacing, which can according to need, to be made by oneself
Justice design, range flexible in application are wide.
Detailed description of the invention
Fig. 1 is the flow chart of the manufacturing method of micron LED glass substrate display module provided in an embodiment of the present invention；
Fig. 2 is the flow chart of the manufacturing method of urn glass substrate provided in an embodiment of the present invention；
Fig. 3 is one of the manufacturing step schematic diagram of display module provided in an embodiment of the present invention；
Fig. 4 is the two of the manufacturing step schematic diagram of display module provided in an embodiment of the present invention；
Fig. 5 is the three of the manufacturing step schematic diagram of display module provided in an embodiment of the present invention；
Fig. 6 is the four of the manufacturing step schematic diagram of display module provided in an embodiment of the present invention；
Fig. 7 is the five of the manufacturing step schematic diagram of display module provided in an embodiment of the present invention；
Fig. 8 is the six of the manufacturing step schematic diagram of display module provided in an embodiment of the present invention；
Fig. 9 is the seven of the manufacturing step schematic diagram of display module provided in an embodiment of the present invention；
Figure 10 is the eight of the manufacturing step schematic diagram of display module provided in an embodiment of the present invention；
Figure 11 is the nine of the manufacturing step schematic diagram of display module provided in an embodiment of the present invention；
Figure 12 is the ten of the manufacturing step schematic diagram of display module provided in an embodiment of the present invention；
Figure 13 is the 11 of the manufacturing step schematic diagram of display module provided in an embodiment of the present invention；
Figure 14 is the 12 of the manufacturing step schematic diagram of display module provided in an embodiment of the present invention；
Figure 15 is the 13 of the manufacturing step schematic diagram of display module provided in an embodiment of the present invention；
Figure 16 is the schematic diagram of display module provided in an embodiment of the present invention.
Specific embodiment
Below by drawings and examples, technical scheme of the present invention will be described in further detail.
The manufacturing method of micron LED glass substrate display module of the invention, is mainly used for LED display, extra small spacing
LED display, ultra high density LED display, LED just shine TV, LED just shine monitor, LED video wall, LED indication,
The display panel in the fields such as LED special lighting manufactures.
Fig. 1 is the manufacturing method flow chart of micron LED glass substrate display module provided in an embodiment of the present invention.The present invention
Manufacturing method include the following steps:
Step 110, urn glass substrate is prepared；
By the preparation process of urn glass substrate, multiple fillings arranged in parallel can be formed in a side surface of substrate
Slot.
The preparation process of specific urn glass substrate can be as shown in Figure 2, comprising:
Step 111, glass substrate original piece cleaned, dried；
Step 112, the glass substrate original piece is seized on both sides by the arms between the upper mold and lower die of mold；
Specifically, the process schematic of this step such as Fig. 3.Wherein the face of seizing on both sides by the arms of upper mold is plane, with glass substrate original piece
A side surface connect；The trapezoidal stage body of lower die seized on both sides by the arms on face with multiple rows of protrusion, the second surface with glass substrate original piece
Connect.The bevel inclination angle of trapezoidal stage body is designed according to reflection in optical theory and projection principle.Upper die and lower die
Surface all has the roughness of mirror surface grade.Lower die both ends also have guiding, and positioning is fixed when for Ccope closing machine.
Step 113, the glass substrate original piece seized on both sides by the arms is placed in forming furnace, fixed pressure is added in the upper mold of mold
Counterweight molds molding under the conditions of preset temperature curve, obtains urn glass substrate.
Specifically, the process schematic of this step such as Fig. 4.Forming furnace has heater on side wall, and bottom has level
Frame is used to place the glass substrate original piece of mold clamping, also, increases pressure clump weight on upper mold.Pressure clump weight uses
The metal material of heatproof and suitable shape.
By heater to heated in forming furnace so that in forming furnace according to setting temperature curve carry out temperature change
Change.Glass substrate original piece is with slightly molten state is heated to, and under the action of pressure counterweight module, the trapezoidal stage body of lower die immerses glass
In substrate piece, upper mold and lower die are molded, and the die cavity gap after molding meets design requirement.It is obtained after cooling as shown in Figure 5
Urn glass substrate.Its partial enlarged view is as shown in fig. 6, have multiple filling slots arranged in parallel on urn glass substrate.Edge
As shown in fig. 7, obtained filling slot is the stupefied slot of micron order with trapezoidal sectional shape, inclined-plane inclines the sectional view of A-A in Fig. 5
Rake angle is identical as the bevel inclination angle a of trapezoidal stage body of multiple rows of protrusion of lower die seized on both sides by the arms on face.
Obtained urn glass substrate is milled, is stand-by after polished and cleaned.
Step 120, in filling slot quantification filling glass sealing-in solder；
Wherein, glass sealing solder uses transparent low temperature glass sealing-in (Soldering Glass, SG) solder, fusing point
Temperature is lower than 260 DEG C of urn glass substrate melting temperature or more.In SG fill solder to the filling slot of glass substrate, form is such as
Shown in Fig. 8.
Step 130, glass sealing solder is heated, makes glass sealing solder in molten state；
Melt is carried out under the melt temperature of the SG solder of setting, SG solder is filled out in the filling slot of glass substrate after melt
Form it is as shown in Figure 9.
Step 140, the die bond template for being mounted with inverted structure LED wafer array and urn glass substrate are aligned, makes LED
Spacing between the line space of cell array and the filling slot is corresponding；
Before executing step 140, it is necessary first to carry out the preparation that die bond template carries out LED wafer array load.Pass through
By more upside-down mountings (flip chip, FC) LED wafer according to design pixel demand, with spacing corresponding with filling slot arrangement die bond
In in die bond template, forming the required die bond template for being mounted with FC LED wafer array.The wherein electrode side of LED wafer and solid
Crystal template connects.The top view for loading the die bond template completed can be as shown in Figure 10.Along such as Figure 11 institute of partial side view of A-A
Show.
LED wafer can be monochromatic or polychrome, be chosen with specific reference to actual use demand.
Step 150, the LED wafer in inverted structure LED wafer array is loaded into the filling slot of urn glass substrate；
Specifically, completing contraposition on kind of brilliant furnace, schematic diagram is as shown in figure 12, is identified according to the contraposition in die bond template,
The die bond template for being mounted with FC LED wafer array is aligned with urn glass substrate on kind of brilliant furnace.
It is capable of providing reasonable temperature curve by kind of a brilliant furnace, keeps SG solder in molten state, so that FCLED chip goes out
Smooth surface can infiltrate in SG solder.The contraposition of die bond template and urn glass substrate can pass through machinery contraposition and image sensing
CCD para-position is realized.
Step 160, under the conditions of set temperature, solidification of the LED wafer in filling slot is carried out by glass sealing solder
Connection；
After this, it is also necessary to press preset temperature curve, anneal, obtain to the urn glass substrate for being loaded into LED wafer
To the urn glass substrate for being loaded into LED flip chip as shown in fig. 13 that.Electrical measurement is carried out after being cleaned and dried.
Step 170, gold-tin alloy Eutectic Layer is deposited on the electrode of LED wafer；
Specifically, first pre-processing to the urn glass substrate for being loaded into LED wafer, pass through (Physical Vapor
Deposition, PVD) technique deposits gold-tin alloy on the electrode of LED wafer, form Eutectic Layer, schematic diagram such as Figure 14 institute
Show.In a preferred embodiment, in gold-tin alloy, gold: the mass ratio of tin is 80%:20%.The melting temperature of gold-tin alloy is
285 degree.
Step 180, in eutectic furnace, the urn glass substrate for being loaded onto LED wafer is welded by gold-tin alloy Eutectic Layer
On to control circuit board to get arrive micron LED glass substrate display module.
Specifically, the preparation of control circuit board is: welding junction element, I/O on the laminated circuit board with Eutectic Layer
Cascade what the elements such as terminal, cooling stand and drive control chip were formed.Wherein cooling stand can be made of aluminum or ceramics.
As shown in figure 15.
After electrical measurement examines control circuit board qualified, it is loaded onto the urn glass substrate and control circuit board one of LED wafer
It rises and is fitted into eutectic mold, pass through eutectic using the urn glass substrate that eutectic furnace completes control circuit board and is loaded into LED wafer
Layer, which is realized, to be electrically connected.
It is cleaning, dry after carrying out electrical measurement, assemble after radiator structure block be micron LED glass substrate display module at
Product, can packed for standby use.
Finally formed micron LED glass substrate display module, as shown in figure 16.
The object of the present invention is to provide micron LED glass substrate display module manufacturing approach craft simple and stable, especially
It is suitable for requiring the high-resolution requirement of small size chip spacing.The micron LED glass substrate display module being prepared,
It is assembled to can according to need progress, may be implemented small to 8 × 8, arrives the image display of unconfined resolution ratio greatly.Between pixel
Away from can according to need self-definition design, range flexible in application is wide.
Above-described specific embodiment has carried out further the purpose of the present invention, technical scheme and beneficial effects
It is described in detail, it should be understood that being not intended to limit the present invention the foregoing is merely a specific embodiment of the invention
Protection scope, all within the spirits and principles of the present invention, any modification, equivalent substitution, improvement and etc. done should all include
Within protection scope of the present invention.
Claims (9)
1. the manufacturing method of a kind of micron of LED glass substrate display module, which is characterized in that the manufacturing method includes:
Prepare urn glass substrate；There are multiple filling slots arranged in parallel on the urn glass substrate；The filling slot is
The stupefied slot of micron order with trapezoidal sectional shape；
In the filling slot quantification filling glass sealing-in solder；The melting temperature of the glass sealing solder is than the micron glass
Low 260 DEG C of the melting temperature of glass substrate or more；
The glass sealing solder is heated, makes the glass sealing solder in molten state；
The die bond template for being mounted with inverted structure LED wafer array and the urn glass substrate are aligned, the LED wafer is made
Spacing between the line space of array and the filling slot is corresponding；
LED wafer in the inverted structure LED wafer array is loaded into the filling slot of the urn glass substrate；
Under the conditions of set temperature, solidification of the LED wafer in the filling slot is carried out by the glass sealing solder
Connection；
Gold-tin alloy Eutectic Layer is deposited on the electrode of the LED wafer；
In eutectic furnace, the urn glass substrate for being loaded onto the LED wafer is welded by the gold-tin alloy Eutectic Layer
On to control circuit board to get arrive the micron LED glass substrate display module.
2. the manufacturing method according to claim 1, which is characterized in that the urn glass substrate for preparing specifically includes:
Glass substrate original piece is cleaned, is dried；
The glass substrate original piece is seized on both sides by the arms between the upper mold and lower die of mold；Wherein the face of seizing on both sides by the arms of the upper mold is plane,
Connect with the first surface of the glass substrate original piece；The trapezoidal stage body of the lower die seized on both sides by the arms on face with multiple rows of protrusion, with
The second surface of the glass substrate original piece connects；
The glass substrate original piece seized on both sides by the arms is placed in forming furnace, fixed pressure counterweight is added in the upper mold, pre-
If molding molding under the conditions of temperature curve, the urn glass substrate is obtained.
3. the manufacturing method according to claim 1, which is characterized in that described to be mounted with inverted structure LED wafer array
Die bond template and the urn glass substrate align specifically:
According to the contraposition mark in the die bond template, the die bond of inverted structure LED wafer array will be mounted on kind of brilliant furnace
Template is aligned with the urn glass substrate.
4. the manufacturing method according to claim 1, which is characterized in that the contraposition includes mechanical contraposition and image sensing
CCD para-position.
5. the manufacturing method according to claim 1, which is characterized in that inverted structure LED wafer battle array will be mounted with described
Before the die bond template of column and urn glass substrate contraposition, the method also includes:
By more flip LED chips according to design pixel demand, with spacing corresponding with filling slot arrangement die bond in described
In die bond template；Wherein the electrode side of the LED wafer connects with the die bond template.
6. the manufacturing method according to claim 1, which is characterized in that described in being carried out by the glass sealing solder
LED wafer in the filling slot solidification connection after, the method also includes:
It anneals by preset temperature curve to the urn glass substrate for being loaded into the LED wafer.
7. the manufacturing method according to claim 1, which is characterized in that the control circuit board includes:
Laminated circuit board with Eutectic Layer.
8. manufacturing method according to claim 7, which is characterized in that the control circuit board further include: be welded in described
Interface element, cooling stand and drive control chip on laminated circuit board.
9. a kind of micron LED glass substrate using the manufacture of manufacturing method described in any claim of the claims 1-8 is shown
Mould group.
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| CN201610638687.0A CN106097912B (en) | 2016-08-05 | 2016-08-05 | The manufacturing method and display module of a kind of micron of LED glass substrate display module |
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| CN106097912B true CN106097912B (en) | 2019-01-25 |
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| JP2002258762A (en) * | 2001-02-28 | 2002-09-11 | Kawaguchiko Seimitsu Co Ltd | Electronic display device with backlight |
| CN1608278A (en) * | 2001-12-27 | 2005-04-20 | 株式会社东芝 | Image display apparatus and method of manufacturing the same |
| CN101930695A (en) * | 2009-06-26 | 2010-12-29 | 三菱电机株式会社 | Image-displaying member and manufacture method thereof |
| CN102916035A (en) * | 2012-08-28 | 2013-02-06 | 李崇 | Large-size full-color OLED (Organic Light-Emitting Diode) display |
| CN103761929A (en) * | 2014-01-08 | 2014-04-30 | 江苏新广联绿色照明工程有限公司 | Silica-based unit board of LED display screen |
| CN205003984U (en) * | 2015-10-15 | 2016-01-27 | 上海铁歌科技有限公司 | Full -color glass LED module |
| CN105551376A (en) * | 2014-10-30 | 2016-05-04 | 程君 | Manufacturing method of composite LED glass basal panel |
-
2016
- 2016-08-05 CN CN201610638687.0A patent/CN106097912B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002258762A (en) * | 2001-02-28 | 2002-09-11 | Kawaguchiko Seimitsu Co Ltd | Electronic display device with backlight |
| CN1608278A (en) * | 2001-12-27 | 2005-04-20 | 株式会社东芝 | Image display apparatus and method of manufacturing the same |
| CN101930695A (en) * | 2009-06-26 | 2010-12-29 | 三菱电机株式会社 | Image-displaying member and manufacture method thereof |
| CN102916035A (en) * | 2012-08-28 | 2013-02-06 | 李崇 | Large-size full-color OLED (Organic Light-Emitting Diode) display |
| CN103761929A (en) * | 2014-01-08 | 2014-04-30 | 江苏新广联绿色照明工程有限公司 | Silica-based unit board of LED display screen |
| CN105551376A (en) * | 2014-10-30 | 2016-05-04 | 程君 | Manufacturing method of composite LED glass basal panel |
| CN205003984U (en) * | 2015-10-15 | 2016-01-27 | 上海铁歌科技有限公司 | Full -color glass LED module |
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| Publication number | Publication date |
|---|---|
| CN106097912A (en) | 2016-11-09 |
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