CN106092074B - Single-chip grade diamond colour center spin gyroscope and preparation method - Google Patents

Single-chip grade diamond colour center spin gyroscope and preparation method Download PDF

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Publication number
CN106092074B
CN106092074B CN201610385284.XA CN201610385284A CN106092074B CN 106092074 B CN106092074 B CN 106092074B CN 201610385284 A CN201610385284 A CN 201610385284A CN 106092074 B CN106092074 B CN 106092074B
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diamond
colour center
waveguide
substrate
nv
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CN201610385284.XA
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Chinese (zh)
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CN106092074A (en
Inventor
刘俊
郭浩
唐军
马宗敏
曹慧亮
陈宇雷
郭旭东
朱强
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中北大学
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Abstract

The present invention provides a kind of single-chip grade diamond colour center spin gyroscope, is prepared for concentration greater than 10 using MPCVD magnetic, electric constrained procedure18cm‑1Nitrogen-doping diamond lattic structure, diamond colour center waveguiding structure is prepared for using micro-nano technology process, realize excitation and space total reflection high efficiency collection entirely in the waveguide of NV colour center structure, the chip for realizing microwave, the coplanar manufacture of radio-frequency antenna and field-generating coil in combination with electron beam process method integrates, and the detection of gyro signal high s/n ratio is carried out by timing control method, invent a kind of diamond colour center spin gyroscope of single chip level.

Description

Single-chip grade diamond colour center spin gyroscope and preparation method

Technical field

It is specifically a kind of based on the coplanar integrated core of diamond colour center waveguide the present invention relates to atomic spin gyroscope field Chip level atomic spin gyroscope.

Background technique

Developing deeply, second generation laser and optical fibre gyro be not domestic and international for the first generation three floating nearly with electrostatic high accuracy gyroscope instrument 30 Last decade becomes Hot spots for development based on the atomic gyroscope technology of quantum mechanics, micro-nano technique, is based on without obvious progress, the third generation The gyroscope of atom technology can reach the limit of Precise physical measurement, and have the potentiality of micromation, integrated development, be used Property airmanship realize long endurance, high-precision, low-power consumption, miniaturization emphasis direction.Wherein, solid-state diamond colour center is former Sub- gyro due to its is Miniaturized, can Planar integration, the advantages such as low in energy consumption become after gaseous state magnetic resonance gyroscope, intervening atom top Novel high-precision atomic gyroscope research hotspot and the following inertial navigation device development emphasis after spiral shell.

Summary of the invention

The present invention is directed to solid-state diamond colour center atomic spin gyro sensitlzing effect, proposes a kind of based on film color cardiac wave It leads, the coplanar integrated chip grade diamond colour center atom laser gyroscope of plane microwave and radio frequency microstrip antenna, flat magnetic field generation coil Instrument.

The present invention is achieved by the following technical scheme:

A kind of single-chip grade diamond colour center spin gyroscope, including diamond substrate, the diamond substrate upper surface Middle part processes diamond NV colour center waveguide, and the diamond substrate upper surface grows the diamond refractive index of one layer of covering waveguide With layer;The diamond substrate upper surface is located at diamond NV colour center waveguide two sides and processes micro-strip antenna array respectively;The gold Hard rock substrate back central part processes field-generating coil.

Preferably, encapsulation card slot is machined in the diamond substrate.

Preferably, diamond NV colour center waveguide both ends connect laser input mouth and fluorescence by end coupling mode respectively Signal output photoelectric detects port;The micro-strip antenna array connects microwave, RF signal input end by end coupling mode Mouthful.

The present invention has fabricated high concentration colour center waveguiding structure in diamond surface using micro-nano manufacturing process first, By the coplanar integrated micro of compatible technology, radio-frequency antenna and field coil, chip grade diamond colour center atomic gyroscope, tool are developed Preparation is as follows:

(1), portion forms NV colour center film layer on a diamond substrate;

(2), the upper and lower surface of diamond substrate is polished;

(3), one layer of silicon oxide masking film layer of surface epitaxial growth on a diamond substrate;

(4), using lithography and etching technology, diamond NV colour center waveguide picture structure is prepared in image conversion transfer;

(5), diamond body structure etching is carried out using dry etching technology, forms diamond NV in the middle part of diamond substrate Colour center waveguide;

(6), silicon oxide masking film layer is removed, then one layer of diamond refractive index matching layers of epitaxial growth, is wrapped as total reflection Layer;

(7), chip-scale Planar integration and manufacture

(71), using electron beam evaporation technique, the Ti/ of one layer of 800 ~ 850nm is prepared in the diamond substrate processed Pt/Au, wherein Ti is about 50nm ~ 100nm with a thickness of 100nm ~ 200nm, Pt thickness, and Au is with a thickness of 300nm ~ 600nm;

(72), using IBE lithographic technique, micro-strip is etched respectively positioned at the two sides of diamond NV colour center waveguide on substrate Antenna structure;

(73), a layer photoresist is got rid of on a diamond substrate, and heat protects the surface structure of substrate after drying;

(74), diamond substrate turns, and repeats step (71) in lower surface, etches magnetic using IBE lithographic technique Field generates coil;

(75) all solidstate encapsulates entire chip level structure, by end coupling mode, at diamond NV colour center waveguide both ends It encapsulates laser input mouth and fluorescence signal output photoelectric detects port, in input terminal encapsulation microwave, the radio frequency letter of microstrip antenna Number input port.

In use, applying electric current to coil by constant-current source generates stabilizing magnetic field.

Gyro signal high s/n ratio read method is as follows:

1, the NV colour center in waveguide is initialized using 532nm laser;Apply the magnetic field 500Gauss simultaneously and realizes core Spin polarization, makes excited level cross relaxation, on electron population to+1 state;

2, after initialization and nuclear spin polarization, magnetic field steps to 10Gauss, keeps electron-spin polarization, then applies and penetrates Frequency pi/2 pulse, pulse frequency 5.1MHz, by freely developing for T time, T is less than nuclear spin lateral relaxation time, then again Secondary application radio frequency pi/2 pulse, pulse frequency 5.1MHz occur spin phase relevant, generate electronics population again, make phase Modulation becomes intensity modulated;

3, then apply pi/2 microwave pulse signal and laser field, by reading electron population information, obtain believing with reference to gyro Number S1 then applies pi/2 radio-frequency pulse and microwave pulse signal, reads again gyro signal S2, obtains high noise by comparison The gyro signal of ratio.

The present invention has rational design, is prepared for concentration greater than 10 using MPCVD magnetic, electric constrained procedure18cm-1Nitrogen mix Miscellaneous diamond lattic structure is prepared for diamond colour center waveguiding structure using micro-nano technology process, realizes NV colour center structure Excitation and space total reflection high efficiency are collected entirely in waveguide, realize microwave, radio-frequency antenna in combination with electron beam process method Coplanar manufacture and the chip of field-generating coil integrate, and gyro signal height letter is carried out by timing control method It makes an uproar than detection, reaches necessary requirement.

Detailed description of the invention

Fig. 1 shows chip grade diamond colour center atom laser gyroscope overall structures

Fig. 2 indicates diamond waveguide processing process

Fig. 3 indicates that a gyro signal detects timing

In figure: 1- diamond substrate, 2- diamond NV colour center waveguide, the 3- diamond substrate back side, 4- micro-strip antenna array, 5- laser input mouth, 6- fluorescence signal output photoelectric detect port, 7- microwave, RF signal input end mouth, and 8- encapsulates card slot, 9- field-generating coil (wire coil).

Specific embodiment

Specific embodiments of the present invention are described in detail with reference to the accompanying drawing.

A kind of single-chip grade diamond colour center spin gyroscope, it is micro- by the waveguide of flat-face colour center, plane microwave, radio frequency Band antenna, the coplanar integrated composition of flat magnetic field coil.Specific structure includes diamond substrate 1, the diamond as shown in Figure 1: 1 upper surface middle part of substrate processes diamond NV colour center waveguide 2, and 1 upper surface of diamond substrate grows one layer of covering waveguide Diamond refractive index matching layers;1 upper surface of diamond substrate is located at 2 two sides of diamond NV colour center waveguide and processes micro-strip respectively Aerial array 4;3 central part of the diamond substrate back side processes field-generating coil 9.It is machined in the diamond substrate 1 Card slot 8 is encapsulated, all solidstate encapsulates entire chip level structure, and after encapsulation, 2 both ends of diamond NV colour center waveguide pass through end face coupling respectively Conjunction mode connects laser input mouth 5 and fluorescence signal output photoelectric detection port 6;The micro-strip antenna array 4 passes through end face Coupled modes connect microwave, RF signal input end mouth 7.

High concentration colour center waveguiding structure is fabricated in diamond surface using micro-nano manufacturing process first, by simultaneous Hold the coplanar integrated micro of technique, radio-frequency antenna and field coil, develops chip grade diamond colour center atomic gyroscope, it is specific to prepare Scheme is as follows:

1, the preparation of high concentration diamond colour center and activation

Concentration is carried out using prepared by microwave plasma chemical vapor deposition (MPCVD) technology and is higher than 1018cm-1Diamond.Using height Purify N2Gas source (99.99%) and high inner wall clean cleanliness tracheae, and gas source enters accent and carries out micronic dust using 12500 mesh filter screens, only Change gas.In ultrahigh vacuum (10-7Torr high-pressure microwave plasma CH is used under)4、H2、N2Three kinds of gases inspire C, N original Son accurately manipulates C, N atomic ratio using magnetic, electric constrained procedure using atomic magnetic moment interaction effect, realizes that superelevation is equal The concentration of even property is higher than 1018cm-1Nitrogen controllably manufacture.

NV colour center activating process: diamond irradiate within 5 hours using high energy 10MeV electron beam irradiation, is carried out in situ Carbon in electronics and lattice collides, and generates vacancy.Under ultra-high vacuum environment, short annealing trend carbon is moved to surface It is dynamic, distortion of lattice and residual stress are eliminated, then anneal under 850 DEG C of high temperature 2h under vacuum, migrates vacancy, and capture Electronics forms NV colour center.

2, the waveguide of diamond colour center is processed

Using MEMS processing technology, the waveguide of low-loss diamond colour center and its waveguide surface index matching package knot are prepared Structure is realized and is collected to NV colour center fluorescence signal high efficiency, as shown in Fig. 2, process flow is as follows:

1) MPCVD epitaxy technique and electron beam irradiation technology are used, high quality is formed on the substrate after the high-temperature anneal NV colour center film layer (i.e. above-mentioned steps 1);

2) diamond substrate upper and lower surface is polished using multiple polishing technology;

3) it is epitaxially grown on the substrate one layer of silicon oxide masking film layer 200nm;

4) lithography and etching technology is used, waveguide picture structure is prepared in image conversion transfer;

5) diamond body structure etching is carried out using dry etching technology, forms diamond colour center waveguiding structure, thickness 200 Micron, 200 microns of width;

6) silicon oxide masking film layer is removed, one layer of diamond refractive index matching layers 200nm of MPCVD epitaxial growth is then used, As total reflection covering, realizes to limit to optical signal middle in waveguide and transmit, realization is collected to the high efficiency of output signal and enhancing It reads.

3, chip-scale Planar integration and manufacture

The integrated processing of microwave, radio-frequency antenna and magnetic coil, specific steps are carried out in the diamond waveguide structure of processing It is as follows:

1) electron beam evaporation technique is used, the Ti/Pt/ of one layer of 800 ~ 850nm is prepared in the diamond substrate processed Au, wherein Ti is about 50nm ~ 100nm with a thickness of 100nm ~ 200nm, Pt thickness, and Au is with a thickness of 300nm ~ 600nm;

2) IBE lithographic technique is used, etches microstrip antenna array array structure, microstrip antenna is 250 microns long, wide and a height of 40 Micron;

3) one layer 2 microns of surface spin coating of photoresist, 80 degree of heat are dried 2 minutes on substrate, protect surface structure;

4) substrate is turned using fixture, following table is face-up, repeats step 1) on the surface, etches skill using IBE Art prepares wire coil, controllably to apply magnetic field, completion magnetic field, microwave, radio frequency, the coplanar chip-scale of colour center waveguide are integrated;

5) entire chip level structure is encapsulated finally by encapsulation card slot all solidstate, it is defeated that laser is carried out by end coupling mode Enter, microwave and radiofrequency signal end coupling input and fluorescence signal output read, by constant-current source give coil apply electric current produce Raw stabilizing magnetic field.

Gyro signal high s/n ratio is read, and one time gyro signal detection timing is as shown in Figure 3.

1) the NV colour center in waveguide is initialized using 532nm laser;Apply 500Gauss magnetic on coil simultaneously It realizes nuclear spin polarization, makes excited level cross relaxation, in electronic layout to+1 state;

2) with after nuclear spin polarization, magnetic field steps to 10Gauss for initialization, keeps electron-spin polarization, then applies and penetrate Frequency pi/2 pulse, pulse frequency 5.1MHz, by freely developing for T time, T is less than nuclear spin lateral relaxation time, then again Secondary application radio frequency pi/2 pulse, pulse frequency 5.1MHz occur spin phase relevant, generate electronics population again, make phase Modulation becomes intensity modulated;

3) then apply pi/2 microwave pulse signal and laser field, by reading electron population information, obtain believing with reference to gyro Number S1 then applies pi/2 radio-frequency pulse and microwave pulse signal, reads again gyro signal S2, obtains high noise by comparison The gyro signal of ratio.

It should be noted last that the above examples are only used to illustrate the technical scheme of the present invention and are not limiting, although ginseng It is described in detail according to the embodiment of the present invention, those skilled in the art should understand that, to technical solution of the present invention It is modified or replaced equivalently, without departure from the spirit and scope of technical solution of the present invention, claim should all be covered In protection scope.

Claims (7)

1. a kind of single-chip grade diamond colour center spin gyroscope, it is characterised in that: including diamond substrate (1), the Buddha's warrior attendant Stone lining bottom (1) upper surface middle part processes the waveguide of diamond NV colour center (2), and diamond substrate (1) upper surface uses MPCVD method One layer of diamond refractive index matching layers of epitaxial growth;Diamond substrate (1) upper surface is located at diamond NV colour center waveguide (2) Two sides process micro-strip antenna array (4) respectively;The diamond substrate back side (3) central part processes field-generating coil (9);
Diamond the waveguide of NV colour center (2) both ends connect laser input mouth (5) and fluorescence signal by end coupling mode respectively Output photoelectric detects port (6);The micro-strip antenna array (4) connects microwave by end coupling mode, radiofrequency signal inputs Port (7).
2. single-chip grade diamond colour center spin gyroscope according to claim 1, it is characterised in that: the Buddha's warrior attendant stone lining Encapsulation card slot (8) is machined on bottom (1).
3. single-chip grade diamond colour center spin gyroscope according to claim 1, it is characterised in that: the diamond NV 200 microns of 200 microns of thickness, the width of colour center waveguide (2).
4. single-chip grade diamond colour center spin gyroscope according to claim 1, it is characterised in that: the microstrip antenna The specification of microstrip antenna in array (4) are as follows: it is 250 microns long, it is wide and 40 microns a height of.
5. single-chip grade diamond colour center spin gyroscope according to claim 1, it is characterised in that: the diamond folding Penetrate rate matching thickness 200nm.
6. a kind of preparation method of single-chip grade diamond colour center spin gyroscope, characterized by the following steps:
(1), portion forms NV colour center film layer on a diamond substrate;
(2), the upper and lower surface of diamond substrate is polished;
(3), one layer of silicon oxide masking film layer of surface epitaxial growth on a diamond substrate;
(4), using lithography and etching technology, diamond NV colour center waveguide picture structure is prepared in image conversion transfer;
(5), diamond body structure etching is carried out using dry etching technology, forms diamond NV colour center in the middle part of diamond substrate Waveguide;
(6), silicon oxide masking film layer is removed, then one layer of diamond refractive index matching layers of epitaxial growth, as total reflection covering;
(7), chip-scale Planar integration and manufacture
(71), using electron beam evaporation technique, the Ti/Pt/ of one layer of 800 ~ 850nm is prepared in the diamond substrate processed Au, wherein Ti is with a thickness of 100nm ~ 200nm, and Pt is with a thickness of 50nm ~ 100nm, and Au is with a thickness of 300nm ~ 600nm;
(72), using IBE lithographic technique, microstrip antenna is etched respectively positioned at the two sides of diamond NV colour center waveguide on substrate Structure;
(73), one layer photoresist of surface spin coating, heat protect the surface structure of substrate on a diamond substrate after drying;
(74), diamond substrate turns, and repeats step (71) in lower surface, etches magnetic field using IBE lithographic technique and produce Raw coil;
(75) all solidstate encapsulates entire chip level structure, by end coupling mode, encapsulates at the colour center waveguide both ends diamond NV Laser input mouth and fluorescence signal output photoelectric detect port, defeated in the input terminal encapsulation microwave of microstrip antenna, radiofrequency signal Inbound port.
7. the preparation method of single-chip grade diamond colour center spin gyroscope according to claim 6, it is characterised in that: step Suddenly (1) is specific as follows:
High concentration diamond colour center preparation process: it is higher than 10 using prepared by microwave plasma chemical vapor deposition technology preparation concentration18cm-1Buddha's warrior attendant The stone heart;Use High Purity N2Gas source and high inner wall clean cleanliness tracheae, and gas source enters accent to be carried out using 12500 mesh filter screens Micronic dust, purification gas;High-pressure microwave plasma CH is used under ultrahigh vacuum4、H2、N2Three kinds of gases, inspire C, N atom, C, N atomic ratio are accurately manipulated, realizes superelevation uniformity using magnetic, electric constrained procedure using atomic magnetic moment interaction effect Concentration be higher than 1018cm-1Nitrogen controllably manufacture high concentration diamond colour center;
NV colour center activating process: diamond substrate irradiate within 5 hours using high energy 10MeV electron beam irradiation, is carried out in situ Carbon in electronics and lattice collides, and generates vacancy;Under ultra-high vacuum environment, short annealing drives carbon to move to surface It is dynamic, distortion of lattice and residual stress are eliminated, then anneal under 850 DEG C of high temperature 2h under vacuum, migrates vacancy, and capture Electronics forms NV colour center.
CN201610385284.XA 2016-06-03 2016-06-03 Single-chip grade diamond colour center spin gyroscope and preparation method CN106092074B (en)

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Publication number Priority date Publication date Assignee Title
CN107256047B (en) * 2017-05-23 2019-01-04 中北大学 Solid-state atomic spin sensor is without magnetic temperature control system
CN108007450A (en) * 2017-11-24 2018-05-08 西安空间无线电技术研究所 Measurement method and device for rotating information and quantum gyroscope

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1465097A (en) * 2000-09-08 2003-12-31 英特尔公司 Integrated core microelectronic package
CN103743390A (en) * 2013-12-31 2014-04-23 北京航空航天大学 Gyroscope based on NV (Nitrogen-Vacancy)-center diamond-MEMS (Micro Electro Mechanical Systems) mixed structure and preparation method thereof
CN105352489A (en) * 2015-11-16 2016-02-24 北京航空航天大学 Diamond nitrogen-vacancy (NV) center-based acceleration sensor
CN105444749A (en) * 2015-11-07 2016-03-30 中北大学 Bailey phase shift-based solid-state spinning resonant gyroscope of crowded NV colored core diamond

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2515226A (en) * 2012-04-13 2014-12-17 Univ California Gyroscopes based on nitrogen-vacancy centers in diamond

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1465097A (en) * 2000-09-08 2003-12-31 英特尔公司 Integrated core microelectronic package
CN103743390A (en) * 2013-12-31 2014-04-23 北京航空航天大学 Gyroscope based on NV (Nitrogen-Vacancy)-center diamond-MEMS (Micro Electro Mechanical Systems) mixed structure and preparation method thereof
CN105444749A (en) * 2015-11-07 2016-03-30 中北大学 Bailey phase shift-based solid-state spinning resonant gyroscope of crowded NV colored core diamond
CN105352489A (en) * 2015-11-16 2016-02-24 北京航空航天大学 Diamond nitrogen-vacancy (NV) center-based acceleration sensor

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