CN106086891A - A kind of advanced lines flat board copper titanium film acidic etching liquid - Google Patents
A kind of advanced lines flat board copper titanium film acidic etching liquid Download PDFInfo
- Publication number
- CN106086891A CN106086891A CN201610655100.7A CN201610655100A CN106086891A CN 106086891 A CN106086891 A CN 106086891A CN 201610655100 A CN201610655100 A CN 201610655100A CN 106086891 A CN106086891 A CN 106086891A
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- China
- Prior art keywords
- flat board
- titanium film
- etching liquid
- hydrogen peroxide
- copper titanium
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/18—Acidic compositions for etching copper or alloys thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/26—Acidic compositions for etching refractory metals
Abstract
The invention discloses a kind of advanced lines flat board copper titanium film acidic etching liquid, its component includes by mass percentage: 1～the HNO of the hydrogen peroxide stabilizer of the hydrogen peroxide of 10%, 0.1～8%, 1～10%3, 0.1～the quaternary ammonium hydroxide of the fluoride sources of the metal inhibitor of 10%, 0.1～3%, 0.1～3% and the water of surplus；Metal inhibitor comprises organic heterocyclic corrosion inhibiter and component A corrosion inhibiter, and component A corrosion inhibiter is at least one in epimino, alkynol.Advanced lines flat board copper titanium film acidic etching liquid of the present invention uses and comprises organic heterocyclic corrosion inhibiter and be selected from the metal inhibitor of at least one in epimino, alkynol, copper titanium duplicature can be carried out a step wet etching, etch-rate is moderate, and the angle that the etching face of gained thin copper film end and the substrate of lower floor are formed is between 35～50 °.
Description
Technical field
The present invention relates to etchant technical field, be specifically related to a kind of advanced lines flat board copper titanium film acid etching
Liquid.
Background technology
At present, in advanced lines flat panel Liquid Crystal panel production technology, copper wiring preparation needs to use copper titanium etching solution and etches
Copper titanium duplex film.Copper titanium film etching solution system well known in the prior art includes persulfate system, hydrogen peroxide system and fluorine
Compound oxidizing acid system.
Wet etching require to include following 5 points: machining accuracy is high；Etch residue is few；Etching is uniformly；Etching speed is fitted
In；The wiring section shape formed after etching is within the limits prescribed.More specifically wiring section requires as thin copper film end
The positive cone-shaped that angle (cone angle) is 30 ~ 60 ° that formed of the substrate of etching face and lower floor, from resist layer end to be arranged on
Distance (CD loss) till the wire ends of the Obstruct membrane contact under wiring is below 1.2 μm, below preferably 1 μm.On
State the etching in 5 requirements the most relevant to the composition stability of etching solution.
In Chinese patent disclosed in CN103764874A and CN104911593A, copper titanium etchant mainly comprises
For persulfate, fluorochemical, mineral acid, cyclic amine compound and water, two schemes based on persulfate, etch-rate fast and
Having good distribution shape after etching, persulfate therein is Ammonium persulfate., sodium peroxydisulfate and potassium peroxydisulfate, without copper ion
Under conditions of self-catalysis, the initial etch speed of above-mentioned etching solution is very slow, then because of the increase of copper ion in etching solution, after etching
The more difficult control of phase response speed；CN102834547A discloses the etching of a kind of plural layers for including layers of copper and titanium layer
Liquid, consisting of hydrogen peroxide, nitric acid, fluoride sources, azole, quaternary ammonium hydroxide and stabilizer of hydrogen peroxide, said components
Middle azole is single as metal inhibitor component, although preferable to the corrosion mitigating effect of copper, but general to the corrosion mitigating effect of titanium layer, because of
This etching speed when etching titanium layer is very fast, and the wiring section shape formed after etching is undesirable, is not suitable for advanced lines and puts down
Plate large scale and high-resolution requirement.
Summary of the invention
It is an object of the invention to overcome defect present in prior art, it is provided that a kind of etching speed is moderate, wiring is cutd open
Face shape satisfactory advanced lines flat board copper titanium film acidic etching liquid.
For realizing above-mentioned technique effect, the technical scheme is that a kind of advanced lines flat board copper titanium film acidic etching liquid,
It is characterized in that, its component includes by mass percentage: 1～the hydrogen peroxide stabilizer of the hydrogen peroxide of 10%, 0.1～8%, 1
～the HNO of 10%3, 0.1～the quaternary ammonium hydroxide of the fluoride sources of the metal inhibitor of 10%, 0.1～3%, 0.1～3% and remaining
The water of amount；Metal inhibitor comprises organic heterocyclic corrosion inhibiter and component A corrosion inhibiter, and component A corrosion inhibiter is selected from epimino, alkynol
In at least one.
Under acid condition, the one in epimino and alkynol is used to compound with organic heterocyclic corrosion inhibiter, the hydroxyl matter of alkynol
Sonization and the sp of epimino2Hydridization all can strengthen the corrosion inhibiter absorption to metal surface, and organic heterocyclic corrosion inhibiter synergism,
Metal surface formed multilamellar absorption structure, increase metal surface corrosion inhibition agent formed complexation layer compactness extent, to copper with
Titanium layer is respectively provided with stable corrosion mitigating effect, and when making this corrosion inhibiter effect and same layer and titanium layer, etch-rate is moderate, slows down etching solution
The speed heated up, the decomposes of suppression hydrogen peroxide, it is favorably improved the stability of etching solution system, extends the bath longevity of etching solution
Life.It addition, the wiring section shape formed after etch processes is good, the distribution meeting advanced lines flat board large scale liquid crystal panel is wanted
Ask.
In order to optimize etch effect further, preferred technical scheme is, its component includes by mass percentage: 4～
The HNO of the hydrogen peroxide stabilizer of hydrogen peroxide, 4～7%, 2～7 of 8%3, 1.7～the metal inhibitor of 5%, 0.1～2% fluorine from
The quaternary ammonium hydroxide of component, 0.1～2% and the water of surplus.
Complexation layer thickness is excessive, can cause the reduction of etch-rate, in order to keep metal surface rational multilamellar absorption thickness
Degree, preferred technical scheme is, in metal inhibitor, the mass percent of organic heterocyclic corrosion inhibiter is 90～98%.
Preferably technical scheme is that the structural formula of alkynol compound is:
Wherein, R is H, methyl or ethyl.R is that the dissolubility in the alkyl then alkynol water that carbochain is longer is poor, and preferred R is
Ethyl, carbochain is the longest more is conducive to improving corrosion inhibiter to the coverage of metal surface and degree of isolation.
Preferably technical scheme is, organic heterocyclic corrosion inhibiter be in thioether class corrosion inhibiter and Azole Corrosion Inhibitors at least
A kind of.Thioether class corrosion inhibiter and Azole Corrosion Inhibitors all can form the protecting film layer of thinner thickness on copper surface, delay with other heterocycles
Erosion agent is compared, and the heat stability of said protection film layer is fine.
In view of the environmental-protecting performance of etching solution, preferred technical scheme is, fluoride sources is selected from ammonium fluoride and fluohydric acid gas
At least one in ammonium.
The copper ion that etching produces is heavy metal ion, in order to ensure the stability of hydrogen peroxide, and the decomposition of suppression hydrogen peroxide,
Preferably technical scheme is that hydrogen peroxide stabilizer is formed by bipyridyl and solvay-type combination of stabilizers, wherein solvay-type stabilizer
For at least one in aminophosphonic acid, amino carboxylic acid and polyhydric carboxylic acid.Bipyridyl and solvay-type stabilizer can quickly and network
Close copper ion, reduce copper ion amount free in etching solution.
In order to accelerate the sequestration rate to copper ion, suppressing the decomposition of hydrogen peroxide further, preferred technical scheme is, network
Mould assembly stabilizer is at least one in ATMP and 3-amino-1,2,4-triazole.
Further preferred technical scheme is, hydrogen peroxide stabilizer is bipyridyl and 3-amino-1,2,4-triazole groups
Conjunction forms, and in hydrogen peroxide stabilizer, the mass percent of bipyridyl is 0.5～5%.Being applied in combination dioxygen of above two material
The stablizing effect of water is better than the effect being used alone, and copper ion complexation speed is faster.
Advantages of the present invention and having the beneficial effects that:
Advanced lines flat board copper titanium film acidic etching liquid of the present invention uses and comprises organic heterocyclic corrosion inhibiter and in epimino, alkynol
The metal inhibitor of at least one, can carry out a step wet etching to copper titanium duplicature, and etch-rate is moderate, gained thin copper film end
The angle that the etching face in portion and the substrate of lower floor are formed is between 35～50 °.
Detailed description of the invention
Below in conjunction with embodiment, the detailed description of the invention of the present invention is further described.Following example are only used for more
Add and clearly demonstrate technical scheme, and can not limit the scope of the invention with this.
The preparation of etch target: using glass as substrate, carries out titanium sputtering and forms the Obstruct membrane (titanium layer) being made up of titanium,
Then by the sputtering of materials with copper as main component, wiring material film forming (layers of copper), then painting erosion resistant agent, exposure transfer figure are made
After case mask, development formed Wiring pattern, manufacture titanium layer superimposed layer layers of copper, include layers of copper and the plural layers of titanium layer.
Embodiment 1～4
According to content listed in Table configuration embodiment 1-4 etching solution:
In the component of embodiment 1-4, hydrogen peroxide all uses conventional phenylurea, the metal inhibitor of 1-4 all use epimino and
The recombinations such as 5-amino-1H-tetrazolium form；Fluoride sources uses ammonium fluoride；
Embodiment 5-7 is based on embodiment 4, and difference is:
Corrosion inhibiter in embodiment 5 uses propilolic alcohol (R in alkynol structural formula is H) and the combination of 5-methyl isophthalic acid H-benzotriazole
Forming, in corrosion inhibiter, also the percentage by weight of alkynol is 10%；
In embodiment 6, corrosion inhibiter uses butynol (R in alkynol structural formula is methyl) and 5-methyl isophthalic acid H-benzotriazole group
Conjunction forms, and in corrosion inhibiter, the percentage by weight of butynol is 2%；Fluoride sources uses ammonium acid fluoride；
In embodiment 7, corrosion inhibiter uses pentyne alcohol (R in alkynol structural formula is ethyl), epimino and the combination of 4-methylthiazol
Forming, wherein pentyne alcohol and epimino etc. heavily mix, and in corrosion inhibiter, the weight sum of pentyne alcohol and epimino accounts for metal inhibitor
Percentage by weight be 6%；Fluoride sources uses ammonium acid fluoride；
Embodiment 8-10 is based on embodiment 7, and difference is:
Embodiment 8 uses bipyridyl and 3-amino-1,2,4-triazole etc. heavily to mix；
Embodiment 9 uses bipyridyl and ATMP to combine, the quality hundred of bipyridyl in hydrogen peroxide stabilizer
Proportion by subtraction is 0.5%.
Embodiment 10 uses bipyridyl and 3-amino-1, and 2,4-triazoles combine, and joins pyrrole in hydrogen peroxide stabilizer
The mass percent of pyridine is 5%.
Comparative example is identical with the component content of embodiment 4, and difference is:
Metal inhibitor in comparative example 1 is epimino；Metal inhibitor in comparative example 2 is pentyne alcohol, the gold in comparative example 3
Belonging to corrosion inhibiter is 5-methyl isophthalic acid H-benzotriazole；
Hydrogen peroxide stabilizer in comparative example 4 is bipyridyl；
Etching solution performance test:
A: by embodiment 1-10 and the etching solution of comparative example 1-4, to above-mentioned containing layers of copper with the etch target of titanium layer at 60 DEG C
Etching 60～150s, obtains on glass substrate containing sample after the etching of layers of copper and titanium layer, contrasts etch-rate, bottom live width CD
LOSS。
The CD LOSS of embodiment 1-10 is respectively less than 1 μm, and in embodiment 1, hydrogen peroxide concentration is low, and etch-rate is relatively low, implements
Etch-rate in example 2 is higher, and the etch-rate of embodiment 5-10 is 24～26nm/min, and bottom live width CD LOSS is respectively less than
0.8 μm, the etch-rate of embodiment 7-10 is 26nm/min.The etch-rate of comparative example 1 and comparative example 2 is less than embodiment 4-
10, bottom live width CD LOSS is respectively 0.83,0.91 μm；The sample etching titanium layer speed erosion of comparative example 3, etching speed is
22 nm/min, bottom live width CD LOSS are 0.94 μm.
B: the hydrogen peroxide in contrast etching solution by heat stability: by by a certain amount of etching solution at the baking oven of 85 ± 1 DEG C
Interior heating 24 hours, titrates its rear contained H before heating2O2Concentration, calculates its active oxygen loss (A.O. loss):
A.O. loss=[(H2O2Initial concentration)-(H2O2Terminate concentration)]/H2O2Initial concentration.
Embodiment 4, embodiment 8-10, the A.O. loss of comparative example 4 etching solution are respectively 4.8%, 3.5%, 2.7%, 2.3%, 4.3%.
C: contrast etching solution contain hydrogen peroxide under Metal Ions Conditions by heat stability: interpolation toward a certain amount of etching solution in
Cu2+, make Cu2+Ion concentration, 2000～2100ppm, titrates its H contained by ion before and after adding Cu2+2O2Concentration, calculates it
Active oxygen loss (A.O. loss).Embodiment 4, embodiment 8-10, comparative example 4 etching solution A.O. loss be respectively 5.1%,
3.9%、2.7%、2.3%、4.7%。
By contrast, embodiment 8-10 use bipyridyl use can reach with the solvay-type combination of stabilizers in addition to bipyridyl
To the stabilized hydrogen peroxide effect optimized further.
The above is only the preferred embodiment of the present invention, it is noted that for the ordinary skill people of the art
For Yuan, on the premise of without departing from the technology of the present invention principle, it is also possible to make some improvements and modifications, these improvements and modifications
Also should be regarded as protection scope of the present invention.
Claims (9)
1. an advanced lines flat board copper titanium film acidic etching liquid, it is characterised in that its component includes by mass percentage: 1～
The HNO of the hydrogen peroxide stabilizer of hydrogen peroxide, 0.1～8%, 1～10% of 10%3, 0.1～the metal inhibitor of 10%, 0.1～3%
The quaternary ammonium hydroxide of fluoride sources, 0.1～3% and the water of surplus；Metal inhibitor comprises organic heterocyclic corrosion inhibiter and component
A corrosion inhibiter, component A corrosion inhibiter is at least one in epimino, alkynol.
Advanced lines flat board copper titanium film acidic etching liquid the most according to claim 1, it is characterised in that its component presses quality hundred
Proportion by subtraction meter includes: 4～the HNO of the hydrogen peroxide stabilizer of the hydrogen peroxide of 8%, 4～7%, 2～73, 1.7～the corrosion inhibition for metal of 5%
The quaternary ammonium hydroxide of the fluoride sources of agent, 0.1～2%, 0.1～2% and the water of surplus.
Advanced lines flat board copper titanium film acidic etching liquid the most according to claim 1, it is characterised in that have in metal inhibitor
The mass percent of machine heterocycle corrosion inhibiter is 90～98%.
Advanced lines flat board copper titanium film acidic etching liquid the most according to claim 2, it is characterised in that alkynol compound
Structural formula is:
Wherein, R is H, methyl or ethyl.
Advanced lines flat board copper titanium film acidic etching liquid the most according to claim 3, it is characterised in that organic heterocyclic corrosion inhibiter
For at least one in thioether class corrosion inhibiter and Azole Corrosion Inhibitors.
Advanced lines flat board copper titanium film acidic etching liquid the most according to claim 1, it is characterised in that fluoride sources is for being selected from
At least one in ammonium fluoride and ammonium acid fluoride.
Advanced lines flat board copper titanium film acidic etching liquid the most according to claim 1, it is characterised in that hydrogen peroxide stabilizer by
Bipyridyl and solvay-type combination of stabilizers form, and wherein solvay-type stabilizer is selected from aminophosphonic acid, amino carboxylic acid and polyhydroxy carboxylic
At least one in acid.
Advanced lines flat board copper titanium film acidic etching liquid the most according to claim 7, it is characterised in that solvay-type stabilizer is
At least one in ATMP and 3-amino-1,2,4-triazole.
Advanced lines flat board copper titanium film acidic etching liquid the most according to claim 8, it is characterised in that hydrogen peroxide stabilizer is
Bipyridyl and 3-amino-1,2,4-triazoles combine, in hydrogen peroxide stabilizer the mass percent of bipyridyl be 0.5～
5%。
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| CN201610655100.7A CN106086891B (en) | 2016-08-11 | 2016-08-11 | A kind of advanced lines tablet copper titanium film acidic etching liquid |
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| CN201610655100.7A CN106086891B (en) | 2016-08-11 | 2016-08-11 | A kind of advanced lines tablet copper titanium film acidic etching liquid |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111094627A (en) * | 2017-09-29 | 2020-05-01 | 松下知识产权经营株式会社 | Etching solution and etching concentrated solution for multilayer film and etching method |
| CN111647888A (en) * | 2020-05-27 | 2020-09-11 | 湖北兴福电子材料有限公司 | Copper etching solution with long etching life |
| CN112064032A (en) * | 2020-09-11 | 2020-12-11 | 武汉迪赛新材料有限公司 | Supplementary liquid capable of prolonging service life of hydrogen peroxide etching liquid |
| CN112921321A (en) * | 2021-01-29 | 2021-06-08 | 四川和晟达电子科技有限公司 | Environment-friendly low-cost titanium-containing metal etching solution composition and use method thereof |
| CN113106453A (en) * | 2020-02-26 | 2021-07-13 | 江苏艾森半导体材料股份有限公司 | Etching solution composition and application thereof |
| CN113445052A (en) * | 2021-07-28 | 2021-09-28 | 南通群安电子材料有限公司 | Differential etching solution suitable for MSAP (multiple-site-sensitive protection) process |
| CN116120936A (en) * | 2022-10-27 | 2023-05-16 | 上海天承化学有限公司 | Etching liquid medicine and preparation method and application thereof |
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| CN104611702A (en) * | 2015-02-11 | 2015-05-13 | 江阴江化微电子材料股份有限公司 | Liquid crystal panel copper-molybdenum membrane etching liquid |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111094627A (en) * | 2017-09-29 | 2020-05-01 | 松下知识产权经营株式会社 | Etching solution and etching concentrated solution for multilayer film and etching method |
| CN111094627B (en) * | 2017-09-29 | 2022-04-05 | 松下知识产权经营株式会社 | Etching solution and etching concentrated solution for multilayer film and etching method |
| CN113106453A (en) * | 2020-02-26 | 2021-07-13 | 江苏艾森半导体材料股份有限公司 | Etching solution composition and application thereof |
| CN111647888A (en) * | 2020-05-27 | 2020-09-11 | 湖北兴福电子材料有限公司 | Copper etching solution with long etching life |
| CN112064032A (en) * | 2020-09-11 | 2020-12-11 | 武汉迪赛新材料有限公司 | Supplementary liquid capable of prolonging service life of hydrogen peroxide etching liquid |
| CN112921321A (en) * | 2021-01-29 | 2021-06-08 | 四川和晟达电子科技有限公司 | Environment-friendly low-cost titanium-containing metal etching solution composition and use method thereof |
| CN113445052A (en) * | 2021-07-28 | 2021-09-28 | 南通群安电子材料有限公司 | Differential etching solution suitable for MSAP (multiple-site-sensitive protection) process |
| CN116120936A (en) * | 2022-10-27 | 2023-05-16 | 上海天承化学有限公司 | Etching liquid medicine and preparation method and application thereof |
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| CN106086891B (en) | 2018-10-26 |
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Denomination of invention: A high generation acidic etching solution for flat copper titanium film Effective date of registration: 20201109 Granted publication date: 20181026 Pledgee: Jiangsu Jiangyin Rural Commercial Bank Co., Ltd. Zhouzhuang sub branch Pledgor: JIANGYIN JIANGHUA MICROELECTRONICS MATERIALS Co.,Ltd. Registration number: Y2020320010181 |
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