CN106086794B - 用于镀铝膜的压腔热床炉镗 - Google Patents

用于镀铝膜的压腔热床炉镗 Download PDF

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CN106086794B
CN106086794B CN201610733091.9A CN201610733091A CN106086794B CN 106086794 B CN106086794 B CN 106086794B CN 201610733091 A CN201610733091 A CN 201610733091A CN 106086794 B CN106086794 B CN 106086794B
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CN106086794A (zh
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王军友
陈鸿杰
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Zhengzhou Huajing New Energy Technology Co., Ltd.
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    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
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    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
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Abstract

本发明提供了一种用于镀铝膜的压腔热床炉镗，它包括半导体加热炉体，所述半导体加热炉体两端分别安装有正导电电极和负导电电极，所述半导体加热炉体上侧开设有铝分子蒸汽挥发口，所述半导体加热炉体下侧开设有多个原料进口。该用于镀铝膜的压腔热床炉镗具有设计科学、实用性强、结构合理、铝分子利用率高、铝分子挥发效果好和生产质量高的优点。

Description

用于镀铝膜的压腔热床炉镗
技术领域
本发明涉及一种铝镀膜原料加热装置，具体的说，涉及了一种用于镀铝膜的压腔热床炉镗。
背景技术
压腔热床炉镗作为真空卷绕镀膜机的重要组成部分，用于加热铝丝使之汽化，形成铝分子蒸汽以便完成镀膜工艺。现有的压腔热床炉镗大多采用开放式结构，同时间隔设置加热带进行加热，由于加热带直接温度变化导致加热产生的蒸气流局部紊乱、金属蒸气浓度下降、有效利用极低，非自由区的二次污染，镀层金属在薄膜上的沉积结合度、均匀度极差。
为了解决以上存在的问题，人们一直在寻求一种理想的技术解决方案。
发明内容
本发明的目的是针对现有技术的不足，从而提供一种设计科学、实用性强、结构合理、铝分子利用率高、铝分子挥发效果好和生产质量高的用于镀铝膜的压腔热床炉镗。
为了实现上述目的，本发明所采用的技术方案是：一种用于镀铝膜的压腔热床炉镗，它包括半导体加热炉体，所述半导体加热炉体两端分别安装有正导电电极和负导电电极，所述半导体加热炉体上侧开设有铝分子蒸汽挥发口，所述半导体加热炉体下侧开设有多个原料进口。
基于上述，多个所述原料进口成排状设置在所述半导体加热炉体上。
基于上述，所述半导体加热炉体是柱状中空炉体，所述正导电电极和所述负导电电极分别是环状电极，所述环状电极压接在所述柱状中空炉体的两侧。
基于上述，所述柱状中空炉体一侧开设有检修口，所述检修口处锁闭有检修门。
基于上述，所述铝分子蒸汽挥发口处设置有铝分子蒸汽稳压管。
基于上述，所述铝分子蒸汽挥发口开设在所述柱状中空炉体的上方，多个所述原料进口成排状设置在所述柱状中空炉体的轴心线上。
本发明相对现有技术具有突出的实质性特点和显著的进步，具体的说，本发明利用所述正导电电极和所述负导电电极对所述半导体加热炉体进行加热，使得炉体内温度均匀，进而使得产生的铝分子蒸汽均匀上升，防止局部蒸汽流紊乱的问题，进而保证镀膜的均匀性和一致性，其具有设计科学、实用性强、结构合理、铝分子利用率高、铝分子挥发效果好和生产质量高的优点。
附图说明
图1是本发明的结构示意图。
图中：1. 半导体加热炉体；2. 正导电电极；3. 负导电电极；4. 铝分子蒸汽挥发口；5. 原料进口；6. 铝分子蒸汽稳压管。
具体实施方式
下面通过具体实施方式，对本发明的技术方案做进一步的详细描述。
如图1所示，一种用于镀铝膜的压腔热床炉镗，该炉镗属于真空卷绕镀膜机的一部分，整个炉镗设置在真空环境内，能够将铝丝汽化进行提供铝分子蒸汽，配合上下游设备完成镀膜工艺。该用于镀铝膜的压腔热床炉镗包括半导体加热炉体1，所述半导体加热炉体1采用SiC等半导体采集制成，满足高温加热需求即可。所述半导体加热炉体1两侧分别安装有正导电电极2和负导电电极3，通过电极外加加热电路进行炉镗温度的控制。所述半导体加热炉1体上侧开设有铝分子蒸汽挥发口4，在所述半导体加热炉体1加热的铝丝变为铝分子蒸汽后通过该铝分子蒸汽挥发口4进入下游设备完成镀膜。为了便于原料铝丝的进入，所述半导体加热炉体1下侧开设有多个原料进口5。
为了便于输送原料铝丝所述原料进口5设置铝丝输送盘，该铝丝输送盘采用现有技术以便铝丝的自动化输送。为了保证铝丝加热的均匀性，多个所述原料进口5成排状设置在所述半导体加热炉体1上。
本实施例中，所述半导体加热炉体1是柱状中空炉体，所述正导电电极2和所述负导电电极3分别是环状电极，所述环状电极压接在所述柱状中空炉体的两侧。配合该柱状中空炉体，所述铝分子蒸汽挥发口4开设在所述柱状中空炉体的上方，多个所述原料进口5成排状设置在所述柱状中空炉体的轴心线上。
采用柱状中空炉体便于安装，便于设置电极、原料进口5等的位置，同时保证加热的均匀性，使得所述半导体加热炉体1产生均匀的铝分子蒸汽流，以此保证镀膜质量。
为了便于检修，所述柱状中空炉体一侧开设有检修口，所述检修口处锁闭有检修门。生产时闭合所述检修门，使得所述柱状中空炉体形成密闭空间，保证铝分子蒸汽流通过所述铝分子蒸汽挥发口4均匀挥发处。
为了便于导向蒸汽流，所述铝分子蒸汽挥发口4处设置有铝分子蒸汽稳压管6，以此保证铝分子蒸汽流向的稳定性。
该用于镀铝膜的压腔热床炉镗整合铝分子蒸汽流的流向，增大蒸气区域金属分子浓度及压力，使得金属分子类轰击基材薄膜，进而实现金属分子有效沉积，形成导电、耐蚀的高性能金属镀层；并且由于铝分子蒸气浓度高、方向性好，在基膜上的沉积速度加快，膜材经过高温沉积区的时间短，基膜受损减小，耐压提高。
所述柱状中空炉体结构形成的铝分子挥发高压源，在类轰击作用下消除柱状晶体，代之而形成的是均匀的颗粒状晶体，提高了金属膜层压应力及金属材料的疲劳寿命，蒸气分子束对膜层的轰击作用影响到膜的形态、结晶组分、物理性能和许多其他特性。
最后应当说明的是:以上实施例仅用以说明本发明的技术方案而非对其限制；尽管参照较佳实施例对本发明进行了详细的说明，所属领域的普通技术人员应当理解：依然可以对本发明的具体实施方式进行修改或者对部分技术特征进行等同替换；而不脱离本发明技术方案的精神，其均应涵盖在本发明请求保护的技术方案范围当中。

Claims (6)

1.一种用于镀铝膜的压腔热床炉镗，其特征在于：它包括半导体加热炉体，所述半导体加热炉体两端分别安装有正导电电极和负导电电极，所述半导体加热炉体上侧开设有铝分子蒸汽挥发口，所述半导体加热炉体下侧开设有多个原料进口。
2.根据权利要求1所述的用于镀铝膜的压腔热床炉镗，其特征在于：多个所述原料进口成排状设置在所述半导体加热炉体上。
3.根据权利要求1或2所述的用于镀铝膜的压腔热床炉镗，其特征在于：所述半导体加热炉体是柱状中空炉体，所述正导电电极和所述负导电电极分别是环状电极，所述环状电极压接在所述柱状中空炉体的两侧。
4.根据权利要求3所述的用于镀铝膜的压腔热床炉镗，其特征在于：所述柱状中空炉体一侧开设有检修口，所述检修口处锁闭有检修门。
5.根据权利要求4所述的用于镀铝膜的压腔热床炉镗，其特征在于：所述铝分子蒸汽挥发口处设置有铝分子蒸汽稳压管。
6.根据权利要求3所述的用于镀铝膜的压腔热床炉镗，其特征在于：所述铝分子蒸汽挥发口开设在所述柱状中空炉体的上方，多个所述原料进口成排状设置在所述柱状中空炉体的轴心线上。
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