CN106057965B - A kind of light turning film production technology - Google Patents
A kind of light turning film production technology Download PDFInfo
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- CN106057965B CN106057965B CN201610377328.4A CN201610377328A CN106057965B CN 106057965 B CN106057965 B CN 106057965B CN 201610377328 A CN201610377328 A CN 201610377328A CN 106057965 B CN106057965 B CN 106057965B
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- 238000007514 turning Methods 0.000 title claims abstract description 67
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 20
- 238000005516 engineering process Methods 0.000 title claims abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 65
- 239000011159 matrix material Substances 0.000 claims abstract description 32
- 239000002318 adhesion promoter Substances 0.000 claims abstract description 18
- 238000003851 corona treatment Methods 0.000 claims abstract description 15
- 238000000465 moulding Methods 0.000 claims abstract description 14
- 238000007738 vacuum evaporation Methods 0.000 claims abstract description 14
- 238000000034 method Methods 0.000 claims abstract description 13
- 239000011248 coating agent Substances 0.000 claims description 22
- 238000000576 coating method Methods 0.000 claims description 22
- 239000003292 glue Substances 0.000 claims description 18
- 239000000463 material Substances 0.000 claims description 17
- 239000000853 adhesive Substances 0.000 claims description 14
- 230000001070 adhesive effect Effects 0.000 claims description 14
- 229910052782 aluminium Inorganic materials 0.000 claims description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 9
- 238000005269 aluminizing Methods 0.000 claims description 9
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims description 7
- 239000004411 aluminium Substances 0.000 claims description 7
- 239000012943 hotmelt Substances 0.000 claims description 7
- 238000007711 solidification Methods 0.000 claims description 7
- 230000008023 solidification Effects 0.000 claims description 7
- 239000004332 silver Substances 0.000 claims description 6
- 229910052709 silver Inorganic materials 0.000 claims description 6
- 238000001548 drop coating Methods 0.000 claims description 4
- 238000001035 drying Methods 0.000 claims description 4
- 125000005843 halogen group Chemical group 0.000 claims description 4
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 claims description 4
- 229910052753 mercury Inorganic materials 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 238000004528 spin coating Methods 0.000 claims description 4
- 239000011127 biaxially oriented polypropylene Substances 0.000 claims description 3
- 229920006378 biaxially oriented polypropylene Polymers 0.000 claims description 3
- UHESRSKEBRADOO-UHFFFAOYSA-N ethyl carbamate;prop-2-enoic acid Chemical compound OC(=O)C=C.CCOC(N)=O UHESRSKEBRADOO-UHFFFAOYSA-N 0.000 claims description 3
- 229920000728 polyester Polymers 0.000 claims description 3
- KCTAWXVAICEBSD-UHFFFAOYSA-N prop-2-enoyloxy prop-2-eneperoxoate Chemical group C=CC(=O)OOOC(=O)C=C KCTAWXVAICEBSD-UHFFFAOYSA-N 0.000 claims description 3
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 claims 1
- 238000010073 coating (rubber) Methods 0.000 claims 1
- 239000005038 ethylene vinyl acetate Substances 0.000 claims 1
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 claims 1
- 238000003466 welding Methods 0.000 abstract description 6
- 239000000047 product Substances 0.000 description 7
- 238000003491 array Methods 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 6
- 238000001723 curing Methods 0.000 description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 5
- 239000003795 chemical substances by application Substances 0.000 description 5
- 238000005253 cladding Methods 0.000 description 5
- 230000007547 defect Effects 0.000 description 5
- 238000005538 encapsulation Methods 0.000 description 5
- -1 polyethylene terephthalate Polymers 0.000 description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 238000006748 scratching Methods 0.000 description 3
- 230000002393 scratching effect Effects 0.000 description 3
- 150000001336 alkenes Chemical class 0.000 description 2
- 230000001427 coherent effect Effects 0.000 description 2
- 238000004132 cross linking Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 229920001038 ethylene copolymer Polymers 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 239000004800 polyvinyl chloride Substances 0.000 description 2
- 229920000915 polyvinyl chloride Polymers 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 239000011265 semifinished product Substances 0.000 description 2
- 229920002799 BoPET Polymers 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- BFMKFCLXZSUVPI-UHFFFAOYSA-N ethyl but-3-enoate Chemical compound CCOC(=O)CC=C BFMKFCLXZSUVPI-UHFFFAOYSA-N 0.000 description 1
- 239000002803 fossil fuel Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- JRZJOMJEPLMPRA-UHFFFAOYSA-N olefin Natural products CCCCCCCC=C JRZJOMJEPLMPRA-UHFFFAOYSA-N 0.000 description 1
- 238000000016 photochemical curing Methods 0.000 description 1
- 238000013082 photovoltaic technology Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229920001897 terpolymer Polymers 0.000 description 1
- 239000000052 vinegar Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
- H02S40/00—Components or accessories in combination with PV modules, not provided for in groups H02S10/00 - H02S30/00
- H02S40/20—Optical components
- H02S40/22—Light-reflecting or light-concentrating means
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
The present invention discloses a kind of light turning film production technology, is included in substrate layer surface and carries out sided corona treatment step；Adhesion promoter step is coated on substrate layer；High-temperature maturing processing step；Make light turning film micro-structure mother matrix step；Molding, curing schedule；Micro-structure face carries out corona step；And vacuum evaporation reflective layer step.Light turning film is obtained after above-mentioned technique, can effectively solve the light Utilizing question of photovoltaic module non-battery panel region (including white space and cell piece welding region).
Description
Technical field
The present invention relates to a kind of light turning film production technologies, belong to photovoltaic technology field.
Background technique
Solar energy is a kind of environmentally protective renewable energy.With the increase of population in the world and to current mainstream can not
The dependence of regenerated fossil fuel and a large amount of consumption, the worry of energy depletion is not only brought to the whole world, also brings environmental pollution
Worry, while environmentally protective novel renewable energy is developed in urgent need.Nowadays, it is based on photogenic voltage principle, utilizes the sun
Monocrystalline silicon, the polysilicon photovoltaic cells component that light generates power are highly developed.Photovoltaic module conventional at present, from lower to upper according to
It is secondary to be made of backboard, encapsulation glue-line, battery chip arrays, encapsulation glue-line and foreboard etc..Generally on photovoltaic module longitudinal direction, electricity
Series connection is welded by tin-coated copper strip between the cell piece of pond chip arrays and realizes current lead-through to achieve the purpose that component power exports.
Conventional batteries piece surface is covered with the wide welding of 2 ~ 4 2mm or so, accounts for about the 3-4% of cell area, in addition, cell piece
Between there is also certain interval (being generally laterally spaced about 2-3mm, longitudinal pitch about 3-5mm), and the 4 of Monocrystalline silicon cell piece
A angle will form an approximate octagon white space, above-mentioned gap and white space are about there are bevel edge among 4 cell pieces
Account for the 3-5% or so of entire assembly array.Although there is many photovoltaic module producers can be by pasting reflective strip on welding with more at present
Mend this hatched area；But the sunlight of cell piece gap and white space how is efficiently used always all in exploration.
In view of this, the present inventor studies this, a kind of light turning film production technology is specially developed, this case is thus
It generates.
Summary of the invention
The object of the present invention is to provide a kind of light turning film production technologies, and photovoltaic group can effectively be solved by obtaining light turning film
The light Utilizing question of part non-battery panel region.
To achieve the goals above, solution of the invention is:
A kind of light turning film production technology, includes the following steps:
Step 1 carries out sided corona treatment in substrate layer surface；
It is coated with adhesion promoter in step 2, the substrate layer after sided corona treatment, to improve ultraviolet cured adhesive and substrate
The adhesive force of layer；
Step 3 is handled the substrate layer after coating adhesion promoter by 72 hours or more high-temperature maturings, high-temperature maturing
Temperature is 40-50 DEG C；
Step 4, the shape according to photovoltaic module non-battery panel region, size make light turning film using UV layout technique
Micro-structure mother matrix；
The above-mentioned light turning film micro-structure mother matrix made is coated on UV molding apparatus on stencilling wheel, in base by step 5
The adhesion promoter coated face spin coating of material layer or drop coating ultraviolet light solidify (UV) glue, by light turning film micro-structure mother matrix to purple
Outer optic-solidified adhesive is molded, and forms micro-structure after solidification on substrate layer；
The micro-structure face of above-mentioned substrate layer is carried out sided corona treatment to further increase its surface tension by step 6；
Step 7, the vacuum evaporation reflective layer in each micro-structure on substrate layer micro-structure face.
Preferably, the light turning film obtained by step 7 is cut, the base with cell piece corresponding region is cropped
Material layer, i.e. substrate layer region corresponding with photovoltaic module cell piece are engraved structure.
Preferably, the step 1 substrate layer surface carry out sided corona treatment after, surface tension reach 50 dynes with
On.
Preferably, adhesion promoter described in step 2 is two-component solvent-type acrylic class material, adhesive force promotes
Agent coating work environment temperature is 26-30 DEG C, humidity 40-70%RH, coating machine speed 45-55m/min, and drying tunnel temperature is respectively
80 DEG C -125 DEG C -150 DEG C -155 DEG C -110 DEG C, when coating, needs strict control substrate layer surface coating homogeneity, substrate layer surface
The defects of drawing silk, splashing material, whiten.
Preferably, light turning film micro-structure mother matrix described in step 4 be equipped with several be laterally and/or longitudinally arranged it is anti-
To micro-structure item, the reversed micro-structure item is zigzag, including several reversed micro-structures, and the reversed micro-structure has packet
The cross section of at least two side is included, the reflective layer is covered on the side of micro-structure, the reversed micro-structure and reversed micro- knot
The angle of the length extending direction of structure item is 0 ~ 90 °.The reversed micro-structure cross section is triangle, two sides and bottom surface
Angle is 30 ~ 75 °.
Preferably, the light turning film micro-structure mother matrix, which is further provided with several, is located at the reversed of 4 angles of cell piece
Microstructured area, the reversed microstructured area are zigzag, including several reversed micro-structures, and the reversed micro-structure, which has, includes
The cross section of at least two side, the reflective layer are covered on the side of micro-structure；Reversed micro- knot of the reversed microstructured area
Structure side is and parallel with corresponding cell piece diagonal line towards corresponding cell piece.
Preferably, the reversed micro-structure cross section of the reversed microstructured area is right angled triangle, including it is inclined-plane, vertical
Face and bottom surface, wherein towards cell piece corresponding to the reversed microstructured area, the angle of the inclined-plane and bottom surface is on the inclined-plane
30~75°.Turn light rays more as far as possible can be reflected to corresponding cell piece by inclined-plane, increase the light conversion effect of cell piece
Rate.
Preferably, each reversed micro-structure of the light turning film micro-structure mother matrix from master surfaces protrusion 10um to
30um(, that is, each micro-structure height is 10um to 30um), and adjacent 2 reversed micro-structures are connected with each other, and it is recessed that centre forms V-arrangement
Slot, the v-depression gap periods are 20-80um.
Preferably, when the light turning film micro-structure mother matrix is coated on UV molding apparatus on stencilling wheel, version slit width degree
Control is within 0.2-0.5mm, and the ultraviolet cured adhesive is acrylic compounds, and acrylic compounds hardness, weatherability, ductility are good
It is good；Ultraviolet cured adhesive coating machine speed is 10-20m/min, and glue temperature is 40-60 DEG C, molding pressure 1.5-5kg/cm2,
The ultraviolet lamp of solidification is mercury lamp or metal halid lamp, curing power density 80-200w/cm.
Preferably, the reflective layer material of step 7 vacuum evaporation is aluminium or silver, for reflective layer with a thickness of 380 to 600, aluminium is pure
Degree is greater than 99.9%, and vacuum degree reaches 1 × 10 when vapor deposition-2To 1 × 10-3Pa.Wire feed rate of aluminizing is 0.4-0.8m/min, is aluminized
Speed is 300-400m/min.Rewinding arrangement is carried out afterwards.Process of aluminizing strict control aluminum layer thickness uniformity, avoids light transmission of aluminizing
The defects of point, surface scratching.
Preferably, being coated with second in the non-micro-structure face of substrate layer after step 7 vacuum evaporation high-purity reflective layer
Alkene-acetate ethylene copolymer (EVA) class hot-melt glue.The hot-melt glue has good weatherability properties, non-conductive property.
Preferably, the substrate layer after step 7 vacuum evaporation high-purity reflective layer is cut, conformed to
The light turning film or light asked turn to item, and it is 1.8-5mm that the light, which turns to a width,.
Preferably, the substrate layer material be PET(polyethylene terephthalate), BOPP(biaxial stretching polypropylene
Alkene), PVC(polyvinyl chloride), BOPET (polyester), CPE(be cast polyethylene) or ABS(butadiene-acrylonitrile-styrene group
At terpolymer)；The ultraviolet cured adhesive is specially epoxy acrylate, urethane acrylate or polyester acrylic
Ester.
The light turning film obtained after above-mentioned technique can effectively solve photovoltaic module non-battery panel region (including sky
White region and cell piece welding region) light Utilizing question.Above-mentioned light turning film production technology has the advantages that following several:
1, the mechanical secret engraving high-cost defect of roller, and the party are overcome by the way of UV layout, cladding roller
Formula group version mode is flexible and changeable, is more advantageous to corresponding different photovoltaic module and manufactures different light turning film mother matrixs, is more suitable for
Industrial application；
2, mould pressing technology is solidified using ultraviolet light, molded curing temperature is low, and briquetting pressure is small, joins after reversed micro-structured form
Number, quality are stablized；The resistance to physical and chemical performance of ultraviolet cured adhesive, weather resistance is excellent, is more advantageous to the application of photovoltaic module.
Below in conjunction with drawings and the specific embodiments, the invention will be described in further detail.
Detailed description of the invention
Fig. 1 is the light turning film production technological process of embodiment 1；
Fig. 2 is the photovoltaic module partial sectional view with light turning film of embodiment 1；
Fig. 3 is the light turning film perspective view of embodiment 1；
Fig. 4 is the micro-structure cross-sectional view in 1 micro-structure item of embodiment；
Fig. 5 is enlarged diagram at the A of Fig. 3；
Fig. 6 is the micro-structure cross-sectional view (Fig. 5 B-B direction section view) of microstructured area；
Fig. 7 is that the light of embodiment 2 turns to a perspective view；
Fig. 8 is that the light of embodiment 2 turns to sliver transvers section figure.
Specific embodiment
Embodiment 1
As shown in Figure 1, a kind of light turning film production technology, includes the following steps:
Step 101 carries out sided corona treatment in substrate layer surface, its surface tension is made to reach 50 dynes or more；
It is coated with adhesion promoter in step 102, the substrate layer after sided corona treatment, to further increase ultraviolet light solidification
The adhesive force of glue and substrate layer, the adhesion promoter are two-component solvent-type acrylic class material.Coating work environment temperature
Degree is 26-30 DEG C, humidity 40-70%RH, coating machine speed 45-55m/min, drying tunnel temperature is respectively 80 DEG C -125 DEG C -150 DEG C -
155 DEG C -110 DEG C, strict control substrate layer surface coating homogeneity when coating, substrate layer surface draws silk, splashes material, whitens etc. scarce
It falls into；
Step 103, adhesion promoter coated substrate layer were by high-temperature maturing processing in 72 hours or more, so that coating master
Agent and curing agent abundant cross-linking reaction within a certain period of time, reach best complex intensity, high-temperature maturing temperature is 40-50 DEG C；
Step 104, the mother matrix to obtain mass production light turning film, according to the shape of photovoltaic module non-battery panel region
Shape, size make light turning film large area micro-structure mother matrix using UV layout technique.If light turning film micro-structure mother matrix is equipped with
The reversed micro-structure item of the dry horizontal and vertical setting of item, the reversed micro-structure item are zigzag, including several reversed micro- knots
Structure, the reversed micro-structure have the cross section including at least two side, the length of the reversed micro-structure and reversed micro-structure item
The angle for spending extending direction is 0 °.The reversed micro-structure cross section is triangle, and the angle of two sides and bottom surface is 60 °.
The light turning film micro-structure mother matrix is further provided with several reversed microstructured areas for being located at 4 angles of cell piece, described reversed
Microstructured area is zigzag, including several reversed micro-structures, and the reversed micro-structure has transversal including at least two side
Face；The reversed micro-structure side of the reversed microstructured area is towards corresponding cell piece, with corresponding cell piece diagonal line phase
In parallel.The reversed micro-structure cross section of the reversed microstructured area is right angled triangle, including inclined-plane, vertical plane and bottom surface,
In, towards cell piece corresponding to the microstructured area, the angle of the inclined-plane and bottom surface is 60 ° on the inclined-plane.It can by inclined-plane
Turn light rays more as far as possible are reflected to corresponding cell piece, increase the light conversion efficiency of cell piece.The light turning film is micro-
Each reversed micro-structure of structure mother matrix from master surfaces protrusion 10um to 30um(, that is, height of each micro-structure be 10um to
30um), adjacent 2 micro-structures are connected with each other, and centre forms v-depression, and the v-depression gap periods are 20-80um.Mother matrix
Concaveconvex structure is bulge-structure at corresponding film finished product on the contrary, i.e. mother matrix is concave with light turning film finished product concaveconvex structure；
The above-mentioned large area light turning film micro-structure mother matrix made is coated on UV molding apparatus into stencilling by step 105
On wheel, mother matrix perimeter is cut according to version wheel diameter when cladding, the version seam after strict control cladding, general control version slit width degree exists
Within 0.2-0.5mm.Solidify (UV) glue, the glue material in substrate layer adhesion promoter coated face spin coating or drop coating ultraviolet light
For acrylic compounds.Hardness, weatherability, ductility are good.Coating machine speed is 10-20m/min, and glue temperature is 40-60 DEG C, ultraviolet
Photocuring (UV) lamp group is 2 groups, and ultraviolet lamp is mercury lamp or metal halid lamp, curing power density 80-200w/cm.Molding
Version wheel molding pressure is 1.5-5kg/cm2, molding semi-finished product microstructured layers should be good with substrate layer binding strength.Above-mentioned light turning film
Micro-structure mother matrix can also effectively can solve version by precise machine machining in processing light steering micro-structure on roller
Seam problem, but it is at high cost；
The micro-structure face of above-mentioned substrate layer is carried out sided corona treatment to further increase its surface tension by step 106；
Vacuum evaporation high-purity is reflective in step 1077, each reversed micro-structure side on substrate layer micro-structure face
Layer.The reflective layer material of vacuum evaporation is aluminium, and with a thickness of 380 to 600, aluminium purity is greater than 99.9%, and deposited chamber vacuum degree reaches 1
×10-2To 1 × 10-3Pa.Wire feed rate of aluminizing is 0.4-0.8m/min, and speed of aluminizing is 300-400m/min.After carry out rewinding
It arranges.The defects of process of aluminizing strict control aluminum layer thickness uniformity, avoids diaphanous spot of aluminizing, surface scratching；
Step 108 is coated with ethylene-vinegar by the non-micro-structure face of step 7 vacuum evaporation high-purity reflective layer rear substrate layer
Sour ethylene copolymer (EVA) class hot-melt glue.The hot-melt glue has good weatherability properties, non-conductive property；
Step 109, finally according to products application object, can correspond to photovoltaic module size it is crosscutting or cut into it is suitable
Size, while cropping the substrate layer with cell piece corresponding region, i.e. substrate layer region corresponding with photovoltaic module cell piece
For engraved structure, the light turning film cut can be covered on the white space of non-battery piece.
A kind of light turning film is obtained by above-mentioned light turning film production technology, is applied in photovoltaic module, as shown in Fig. 2,
The photovoltaic module includes that the backboard 1, first being sequentially overlapped encapsulates glue-line 2, light turning film 3, the encapsulation of battery chip arrays 5, second
Glue-line 4 and foreboard 6.The light turning film 3 includes substrate layer 31, and the microstructured layers 32 on substrate layer 31, and covering is arranged in
Reflective layer 33 on microstructured layers 32, the reflective layer 33 are distributed in 51 gap of each cell piece of battery chip arrays, Yi Ji electricity
In gap between pond piece 51 and photovoltaic component frame.Light turning film 3 described in the present embodiment is arranged at 5 bottom of battery chip arrays
Portion, reflective layer 33 fill all gap locations for being covered on photovoltaic module, maximize and improve phototransformation efficiency.
For the reflector efficiency for guaranteeing reflective layer 33,33 top of reflective layer is generally flushed with the upper surface of cell piece 51.
Therefore, the substrate layer 31 region corresponding with cell piece 51 is engraved structure, passes through hollow design, it is possible to reduce reflective layer
Difference in height between 33 and cell piece 51.
As seen in figures 3-6, the microstructured layers 32 include the micro-structure item 321 of several horizontal and vertical settings, described
Micro-structure item 321 is zigzag, and including several mutually coherent micro-structures 323, it includes 2 sides that the micro-structure 323, which has,
The cross section in face, the reflective layer 33 are covered on the side of micro-structure 323.Wherein, micro- knot between each cell piece 51
323 cross section of micro-structure in structure item 321 is generally on-right angle triangle, and the angle α of two sides and bottom surface is 30 ~ 75 °.At this
In embodiment, 323 cross section of micro-structure in the micro-structure item 321 between each cell piece 51 is equilateral triangle, α=
60°.323 cross section of micro-structure in micro-structure item 321 between cell piece 51 and photovoltaic component frame is right angle trigonometry,
Inclined-plane is towards cell piece 51, angle β=30 ~ 75 ° (the present embodiment β=60 °) on inclined-plane and bottom surface.It can will be more as far as possible by inclined-plane
Light be reflected to corresponding cell piece 51, increase the light conversion efficiency of cell piece 51.
In the present embodiment, its length extending direction of micro-structure 323 in all micro-structure items 321 and micro-structure item 321
Length extending direction angle=0 °, i.e. its length extending direction of micro-structure 323 in micro-structure item 321 and micro-structure item
321 length extending direction is parallel to each other.
Different shape, angle, the micro-structure of orientation is arranged in the corresponding different cell piece gap locations of the light turning film 3
323, the luminous energy of any gap location can be made to maximize and be reflected on cell piece 51.
In the present embodiment, 51 thickness of Monocrystalline silicon cell piece is about 200 μm, substrate layer 31 with a thickness of 180 μm,
The micro-structure 32 is 20 μm prominent from substrate layer 31, and reflective layer 33 is with a thickness of 400.
The substrate layer 31 uses PET film, and the microstructured layers 32 use epoxy acrylate；The reflective layer 33 is plating
Aluminium layer.
Installed in this implementation light turning film 3 it is easy to implement, only need to be in photovoltaic component encapsulating, will whole light steering
Film 3 is placed on 5 lower section of battery chip arrays, good by encapsulation glue-line fixing seal, without processes such as in addition stickup, positioning, and
The hollow out nested designs of substrate layer 31, can also be to avoid layer " drift " problem.In the specific encapsulation process of photovoltaic module, work as concatenation
When the welding of adjacent 2 cell pieces 51 and the inconsistent part micro-structure item 321 of light turning film 3, part light can be cropped and turned
To film, so that light turning film 3 be made entirely to be embedded in the non-battery panel region of photovoltaic module.
Embodiment 2
Light turning film production technology described in the present embodiment is substantially the same manner as Example 1, and main region is the present embodiment
It produces obtained light turning film available inclined stripe narrow band light after cutting and turns to item.
Step 1 carries out sided corona treatment in substrate layer surface, its surface tension is made to reach 50 dynes or more；
It is coated with adhesion promoter in step 2, the substrate layer after sided corona treatment, to further increase ultraviolet cured adhesive
With the adhesive force of substrate layer, the adhesion promoter is two-component solvent-type acrylic class material.Coating work environment temperature
It is 26-30 DEG C, humidity 40-70%RH, coating machine speed 45-55m/min, drying tunnel temperature is respectively 80 DEG C -125 DEG C -150 DEG C -
155 DEG C -110 DEG C, strict control substrate layer surface coating homogeneity when coating, substrate layer surface draws silk, splashes material, whitens etc. scarce
It falls into；
Step 3, adhesion promoter coated substrate layer were by high-temperature maturing processing in 72 hours or more, so that coating host agent
With curing agent abundant cross-linking reaction within a certain period of time, reach best complex intensity, high-temperature maturing temperature is 40-50 DEG C；
Step 4, for obtain produce in enormous quantities light turning film mother matrix, according to the shape of photovoltaic module non-battery panel region,
Size makes light turning film large area micro-structure mother matrix using UV layout technique.Light turning film micro-structure mother matrix is equipped with several
The reversed micro-structure item being laterally arranged, the reversed micro-structure item are zigzag, including several reversed micro-structures are described reversed
Micro-structure has the cross section including at least two side, the length extending direction of the reversed micro-structure and reversed micro-structure item
Angle be 45 °.The reversed micro-structure cross section is triangle, and the angle of two sides and bottom surface is 45 °.The light turns to
Each reversed micro-structure of film micro-structure mother matrix from master surfaces protrusion 10um to 30um(, that is, height of each micro-structure is 10um
To 30um), adjacent 2 micro-structures are connected with each other, and centre forms v-depression, and the v-depression gap periods are 20-80um.It is female
Version concaveconvex structure is bulge-structure at corresponding film finished product on the contrary, i.e. mother matrix is concave with light turning film finished product concaveconvex structure；
The above-mentioned large area light turning film micro-structure mother matrix made is coated on UV molding apparatus into stencilling wheel by step 5
On, mother matrix perimeter is cut according to version wheel diameter when cladding, the version seam after strict control cladding, general control version slit width degree is in 0.2-
Within 0.5mm.Solidify (UV) glue in substrate layer adhesion promoter coated face spin coating or drop coating ultraviolet light, which is third
Olefin(e) acid class.Hardness, weatherability, ductility are good.Coating machine speed is 10-20m/min, and glue temperature is 40-60 DEG C, UV light
Changing (UV) lamp group is 2 groups, and ultraviolet lamp is mercury lamp or metal halid lamp, curing power density 80-200w/cm.At stencilling wheel
Molding pressure is 1.5-5kg/cm2, molding semi-finished product microstructured layers should be good with substrate layer binding strength.The above-mentioned micro- knot of light turning film
Structure mother matrix can also effectively can solve version seam and ask by precise machine machining in processing light steering micro-structure on roller
Topic, but it is at high cost；
The micro-structure face of above-mentioned substrate layer is carried out sided corona treatment to further increase its surface tension by step 6；
Vacuum evaporation high-purity reflective layer in step 7, each reversed micro-structure side on substrate layer micro-structure face.Very
It is silver that reflective layer material, which is deposited, in sky, and with a thickness of 380 to 600, deposited chamber vacuum degree reaches 1 × 10-2To 1 × 10-3Pa.It is silver-plated
Wire feed rate is 0.4-0.8m/min, and silver-plated speed is 300-400m/min.Rewinding arrangement is carried out afterwards.Silver plating process strict control
The defects of silver thickness uniformity, avoids silver-plated diaphanous spot, surface scratching；
Step 8, after vacuum evaporation high-purity reflective layer, substrate layer non-micro-structure face be coated with ethyl vinyl acetate second
Alkene copolymer (EVA) class hot-melt glue.The hot-melt glue has good weatherability properties, non-conductive property；
Step 9, finally according to products application object, it is crosscutting or cut into suitable ruler to can correspond to photovoltaic module size
It is very little, according to the separator bar of each reversed micro-structure item, light turning film is cut into light and turns to item, the light turns to a width and is
1.8-5mm.Cut obtained light turn to item can be covered on cell piece welding region or relatively narrow white space.
A kind of light steering item is obtained by above-mentioned light turning film production technology, as Figure 7-8, including substrate layer 31, if
The microstructured layers 32 on substrate layer 31 are set, and the reflective layer 33 being covered on microstructured layers 32.The microstructured layers 32 are
Zigzag, including several mutually coherent micro-structures 321, the micro-structure 321 has the cross section including 2 sides, institute
Reflective layer is stated to be covered on the side of micro-structure 321.In the present embodiment, 321 cross section of micro-structure is isosceles triangle,
α=45°.Its length extending direction of the micro-structure 321 and light turn to the angle of the length extending direction of itemIt=45 °, sets in this way
In respect of the stability (being hardly damaged, incomplete) for being conducive to light steering micro-structure, be conducive to improve light conversion efficiency.
Light described in the present embodiment turns to a substrate layer 31 with a thickness of 50 μm, and the micro-structure 32 is prominent from substrate layer 31
10 μm, reflective layer 33 is with a thickness of 400.The substrate layer 31 is BOPP film；The microstructured layers 2 use urethane acrylate；
The reflective layer is silver coating.
Above-described embodiment and schema and non-limiting product form and style of the invention, any technical field it is common
The appropriate changes or modifications that technical staff does it all should be regarded as not departing from patent category of the invention.
Claims (6)
1. a kind of light turning film production technology, which comprises the steps of:
Step 1 carries out sided corona treatment in substrate layer surface；
It is coated with adhesion promoter in step 2, the substrate layer after sided corona treatment, to improve ultraviolet cured adhesive and substrate layer
Adhesive force；
Step 3 is handled the substrate layer after coating adhesion promoter by 72 hours or more high-temperature maturings, high-temperature maturing temperature
It is 40-50 DEG C；
Step 4, the shape according to photovoltaic module non-battery panel region, size make the micro- knot of light turning film using UV layout technique
Structure mother matrix；The light turning film micro-structure mother matrix is equipped with several reversed micro-structure items being laterally and/or longitudinally arranged, and
Several are located at the reversed microstructured area at 4 angles of cell piece, and the reversed micro-structure item and reversed microstructured area are zigzag,
Including several reversed micro-structures, the reversed micro-structure has the cross section including at least two side, and reflective layer is covered on micro-
On the side of structure, the angle of the length extending direction of the reversed micro-structure and reversed micro-structure item is 0-90 °；It is described reversed
Micro-structure cross section is triangle, and the angle of two sides and bottom surface is 30-75 °；Reversed micro- knot of the reversed microstructured area
Structure side is and parallel with corresponding cell piece diagonal line towards corresponding cell piece；The reversed microstructured area it is reversed
Micro-structure cross section is right angled triangle, including inclined-plane, vertical plane and bottom surface, wherein the inclined-plane is towards the reversed micro-structure
The angle of cell piece corresponding to area, the inclined-plane and bottom surface is 30-75 °；
The above-mentioned light turning film micro-structure mother matrix made is coated on UV molding apparatus on stencilling wheel, in substrate layer by step 5
The spin coating of adhesion promoter coated face or drop coating ultraviolet light UV solidification glue, by light turning film micro-structure mother matrix to UV light
Change glue to be molded, forms micro-structure after solidification on substrate layer；
When the light turning film micro-structure mother matrix is coated on UV molding apparatus on stencilling wheel, version slit width degree is controlled in 0.2-
Within 0.5mm, the ultraviolet cured adhesive is epoxy acrylate, urethane acrylate or polyester acrylate；Ultraviolet light
Solidification rubber coating speed is 10-20m/min, and glue temperature is 40-60 DEG C, molding pressure 1.5-5kg/cm2, the purple of solidification
Outer lamp is mercury lamp or metal halid lamp；
The micro-structure face of above-mentioned substrate layer is carried out sided corona treatment to further increase its surface tension by step 6；
Step 7, the vacuum evaporation reflective layer in each micro-structure on substrate layer micro-structure face.
2. a kind of light turning film production technology as described in claim 1, it is characterised in that: the substrate layer material be PET,
BOPP, PVC, BOPET, CPE or ABS, after substrate layer surface carries out sided corona treatment, surface tension reaches 50 dynes or more；Step
Adhesion promoter described in rapid 2 is two-component solvent-type acrylic class material, adhesion promoter coating work environment temperature
It is 26-30 DEG C, humidity 40-70%RH, coating machine speed 45-55m/min, drying tunnel temperature is respectively 80 DEG C -125 DEG C -150 DEG C -
155℃-110℃。
3. a kind of light turning film production technology as described in claim 1, it is characterised in that: the light turning film micro-structure mother matrix
Each reversed micro-structure from master surfaces protrusion 10um to 30um, adjacent 2 reversed micro-structures are connected with each other, and centre forms V
Connected in star, the v-depression gap periods are 20-80um.
4. a kind of light turning film production technology as described in claim 1, it is characterised in that: step 7 vacuum evaporation reflective layer material
Material is aluminium or silver, and for reflective layer with a thickness of 380 to 600, aluminium purity is greater than 99.9%, and vacuum degree reaches 1 × 10 when vapor deposition-2To 1 ×
10-3Pa, wire feed rate of aluminizing are 0.4-0.8m/min, and speed of aluminizing is 300-400m/min；It is high-purity by step 7 vacuum evaporation
After spending reflective layer, ethylene-vinyl acetate copolymer class hot-melt glue is coated in the non-micro-structure face of substrate layer.
5. a kind of light turning film production technology as described in claim 1, it is characterised in that: turn the light obtained by step 7
It is cut to film, crops the substrate layer with cell piece corresponding region.
6. a kind of light turning film production technology as described in claim 1, it is characterised in that: will be high by step 7 vacuum evaporation
Substrate layer after purity reflective layer is cut, and obtains satisfactory light turning film or light turns to item, the light turns to item
Width is 1.8-5mm.
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| CN108169830A (en) * | 2017-12-22 | 2018-06-15 | 常州百佳年代薄膜科技股份有限公司 | Reflection composite film and preparation method thereof, application method |
| JP2021511685A (en) * | 2018-01-30 | 2021-05-06 | スリーエム イノベイティブ プロパティズ カンパニー | An optical direction change device and a solar cell module equipped with the device. |
| US20210313482A1 (en) * | 2018-08-31 | 2021-10-07 | 3M Innovative Properties Company | Light redirecting film having stray-light mitigation properties useful with solar modules |
| CN109808142B (en) * | 2019-03-28 | 2024-03-22 | 深圳市致胜腾达电业有限公司 | Production process of TPU (thermoplastic polyurethane) laminated decorative belt |
| CN112980031A (en) * | 2021-02-19 | 2021-06-18 | 晋江联兴反光材料有限公司 | UV mold film with microstructure and preparation method thereof |
| CN114660720A (en) * | 2022-03-31 | 2022-06-24 | Oppo广东移动通信有限公司 | Preparation method of optical waveguide master, optical waveguide and augmented reality equipment |
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| CN103413861A (en) * | 2013-07-18 | 2013-11-27 | 常州大学 | Light reflecting thin film of photovoltaic module and method for fixing light reflecting thin film and soldering strip |
| CN103813896A (en) * | 2011-09-08 | 2014-05-21 | 三菱丽阳株式会社 | Transparent film having micro-convexoconcave structure on surface thereof, method for producing same, and substrate film used in production of transparent film |
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| JP5494771B2 (en) * | 2011-09-30 | 2014-05-21 | ダイキン工業株式会社 | Condensing film, solar cell module, and transfer mold |
| CN202549892U (en) * | 2012-02-24 | 2012-11-21 | 嘉兴优太太阳能有限公司 | Photovoltaic assembly with large light collection area |
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| CN102262246A (en) * | 2006-05-11 | 2011-11-30 | 维斯特恩格科地震控股有限公司 | Method and apparatus for marine seismic data acquisition |
| CN103813896A (en) * | 2011-09-08 | 2014-05-21 | 三菱丽阳株式会社 | Transparent film having micro-convexoconcave structure on surface thereof, method for producing same, and substrate film used in production of transparent film |
| CN103413861A (en) * | 2013-07-18 | 2013-11-27 | 常州大学 | Light reflecting thin film of photovoltaic module and method for fixing light reflecting thin film and soldering strip |
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