CN106057761A - Barrel-shaped solder ball redistribution packaging structure for GSIC (Grand Scale Integration Circuit) - Google Patents
Barrel-shaped solder ball redistribution packaging structure for GSIC (Grand Scale Integration Circuit) Download PDFInfo
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- CN106057761A CN106057761A CN201610673588.6A CN201610673588A CN106057761A CN 106057761 A CN106057761 A CN 106057761A CN 201610673588 A CN201610673588 A CN 201610673588A CN 106057761 A CN106057761 A CN 106057761A
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- soldered ball
- barrel
- shaped
- solder ball
- encapsulation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L24/14—Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
- H01L2224/0601—Structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
- H01L2224/0605—Shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
- H01L2224/065—Material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/14—Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
- H01L2224/1401—Structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/14—Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
- H01L2224/1405—Shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/14—Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
- H01L2224/145—Material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
Abstract
The invention relates to a barrel-shaped solder ball redistribution packaging structure for a GSIC (Grand Scale Integration Circuit), and the structure comprises an RCP plastic packaging material, a bare chip, a dielectric layer, an RDL bonding pad, a solder ball, a PCB bonding pad, and a PCB substrate. The solder ball is a barrel-shaped solder ball, wherein the upper and lower parts of the solder ball are respectively one part of two hemispheres, and the central part is a cylinder. The whole solder ball is shaped like a barrel. The structure improves the thermal mechanical reliability.
Description
Technical field
The invention belongs to field of semiconductor package, be mainly used in the encapsulation of VLSI chip, relate to especially
And a kind of redistribution encapsulating structure with barrel-shaped geometry soldered ball.
Background technology
Along with the trend of miniaturization and multifunction is day by day strengthened, chip package is also from BGA before
(BallGridArray, BGA) encapsulation has developed into wafer level encapsulation (WaferLevelPackage, WLP) encapsulation, and traditional
Fan-in type WLP packing forms constrains the quantity of soldered ball, and fan-out-type WLP encapsulation can well solve soldered ball quantity and pitch
Problem.Redistribution encapsulation technology (redistributedchippackaging, RCP) is the one of fan-out-type WLP encapsulation, it
Compared with BGA package, thickness and the area of encapsulation the most significantly reduce, and are the most promising following encapsulation technologies of one.
And package thickness and the reduction of area so that the thermomechanical problem of this packing forms becomes especially prominent.Recently, greatly
The inefficacy of about 65% all has thermomechanical problem to cause.Soldered ball, as most important part in encapsulation, plays electrical connectivity
With heat conduction, the function of heat radiation, and soldered ball is also the part of most fragile in whole encapsulation, and it is all to have weldering that most thermomechanical lost efficacy
The fracture of ball causes, it might even be possible to say that the thermomechanical reliability of soldered ball directly decides the thermomechanical of whole packaging body reliable
Property.All spherical solder balls is being used in nowadays main flow encapsulation technology, as in figure 2 it is shown, and the geometry of the soldered ball heat engine to encapsulation
The problem that affects of tool reliability is often ignored in the design of encapsulation technology and development.
Therefore, it should consider this factor of soldered ball geometry mechanism in encapsulation technology, to improve the heat engine of chip encapsulation technology
Tool integrity problem.
Summary of the invention
The present invention provides a kind of redistribution encapsulating structure that can improve chip package thermomechanical integrity problem.The present invention
By changing the geometry of soldered ball, reduce in use, energising heat production and the condition of breakpoint this thermal cycle of heat release
Under, the thermal and mechanical stress, strain and the non-ballistic that produce on soldered ball caused due to packaging body each parts thermal coefficient of expansion difference
Property strain energy density, thus improve redistribution encapsulation thermomechanical reliability, improve chip service life.The skill of the present invention
Art scheme is as follows:
A kind of barrel-shaped soldered ball redistribution encapsulating structure for VLSI chip, including RCP capsulation material,
Nude film, dielectric layer, RDL pad, soldered ball, PCB pad and PCB substrate, it is characterised in that described soldered ball is barrel-shaped soldered ball, its
Two parts are a part for two hemisphere respectively up and down, and centre is one section of cylinder, and soldered ball is overall in barrel-shaped.
The redistribution of the barrel-shaped geometry soldered ball of the present invention is encapsulated in thermomechanical reliability aspect and is improved, mainly
It is embodied in: the soldered ball of tubbiness geometry can reduce in redistribution encapsulation owing to packaging body each parts thermal coefficient of expansion does not mates
And the thermal and mechanical stress produced, strain, also effectively reduce inelastic strain energy and connect RDL pad and PCB pad at soldered ball
The accumulation of skin layer, extends the life-span of chip；Barrel-shaped soldered ball is relative to traditional spherical solder balls, to sticking up in welding process
Qu Xianxiang has preferably alleviation, improves the board level reliability of chip；Barrel-shaped soldered ball and identical soldered ball opening and ball height
Spherical solder balls is compared, and the volume of soldered ball is effectively reduced, thus provides cost savings.
Accompanying drawing explanation
The RCP encapsulating structure of Fig. 1 barrel-shaped geometry mechanism soldered ball
Fig. 2 is the geometry of spherical solder balls
The geometry of the barrel-shaped soldered ball of Fig. 3
The vertical structure of Fig. 4 barrel-shaped soldered ball RCP encapsulation
The top view of 1/4th models constructed by Fig. 5
Inelastic strain energy density population distribution figure on soldered ball in Fig. 6 barrel-shaped soldered ball RCP encapsulation
Fig. 7 is the top view that in barrel-shaped soldered ball RCP encapsulation, inelastic strain energy density is distributed on soldered ball
Fig. 8 is the upward view that in barrel-shaped soldered ball RCP encapsulation, inelastic strain energy density is distributed on soldered ball
Description of reference numerals: 1 is RCP capsulation material；2 is nude film (silicon chip)；3 is dielectric layer；4 is RDL pad；5 is weldering
Ball；6 is PCB pad；7 is PCB substrate；R is the radius of soldered ball opening；H is the height of soldered ball.
Detailed description of the invention
Conventional redistribution encapsulation technology flow process is: first, nude film active face is positioned on substrate downwards, and uses asphalt mixtures modified by epoxy resin
Fat encapsulates；Then baseplate material is got rid of；Redistribution process, i.e. rearrangement holding wire, power and ground；Implant ball afterwards
Shape soldered ball；Finally cut the single chip of journey open.
In order to agree with mutually with conventional redistribution encapsulation flow process, barrel-shaped soldered ball will be according to the parameter conduct of original spherical solder balls
With reference to designing and producing, the opening of such as soldered ball, the height of soldered ball, the material etc. of soldered ball.The upper and lower two parts of barrel-shaped soldered ball divide
Not being two hemisphere, the soldered ball opening at upper and lower two ends to agree with former technological process, i.e. keep the soldered ball opening of barrel-shaped soldered ball with
The soldered ball opening of former spherical solder balls is consistent, and centre is one section of cylinder, and soldered ball is overall in barrel-shaped.Then during planting ball, bucket
Shape soldered ball is planted on pad, uses suitable solder technology that chip is welded on pcb board the most in actual use.
Barrel-shaped soldered ball manufacturing technology in this technical scheme, plant playing skill art and last solder technology is the pass of the present invention
Key technology point.During these, it is ensured that the geometry of soldered ball is barrel-shaped, the most just can make the barrel-shaped soldered ball heat to encapsulation
Mechanical Reliability plays the effect of improvement.
The present invention will be described with embodiment below in conjunction with the accompanying drawings.
The structure of the present invention is shown as shown in Figure 1, Figure 3 and Figure 4, and Fig. 1 is general effect figure, and Fig. 3 is the geometry of soldered ball, figure
4 is generally longitudinally structure, is the weight that constitutes of capsulation material 1, nude film 2 (silicon chip), dielectric layer 3 and RDL pad 4 the most from top to bottom
Distribution layer, soldered ball 5, PCB pad 6 and PCB substrate 7.Wherein, in capsulation material is wrapped in silicon chip, the protection to silicon chip is played
Effect；Capsulation material is the thinnest, can preferably heat conduction；Capsulation material area is long-range and silicon area, and the part having more is served as
Fan-out area, can slowly foot high ball count amount requirement；Soldered ball, by RDL pad and package interior electrical communication, passes through PCB
Pad is connected with PCB substrate.
Soldered ball selects SAC soldered ball, i.e. tin-silver-copper soldered ball, and this soldered ball is the most leaded, the most friendly to environment；Barrel-shaped soldered ball
Less than the spherical solder balls volume that same parameter requires, low cost；It addition, the technological difficulties of the present invention are to plant ball and soldered ball process,
Detailed consideration various factors, selects suitable soldering paste, and the geometry of the barrel-shaped soldered ball of strict guarantee does not changes.
For verifying that barrel-shaped geometry mechanism soldered ball has more preferably thermomechanical reliability than spherical geometry soldered ball, to figure
Encapsulating structure shown in 1 is modeled, it is contemplated that the symmetry of encapsulation, set up respectively barrel-shaped soldered ball and spherical solder balls four/
One RCP mailbox unit packaging model, as shown in Figure 4 and Figure 5, Fig. 4 shows the vertical structure that barrel-shaped soldered ball RCP encapsulates, and Fig. 5 shows
The relative size of the model set up, silicon chip is 2 × 2 × 0.3mm3, it is positioned at above 16 soldered balls of internal layer, above outer layer soldered ball
For fanout area.As shown in Figures 2 and 3, barrel-shaped soldered ball keeps consistent with the soldered ball opening radius R of spherical solder balls with ball height H.
Apply the thermal cycling loads of-40 DEG C-125 DEG C, circulate three times, try to achieve at key point inelastic strain energy in solder ball surface thin layer
The size of density, characterizes the thermomechanical reliability of encapsulation.Inelastic strain energy accumulation is the fewest, i.e. inelastic strain energy is close
Angle value is the least, then illustrate that the encapsulation thermomechanical reliability of this structure is the best.Knowable to Fig. 6, Fig. 7 and Fig. 8: for soldered ball and encapsulation
At the upper surface that body connects, in the soldered ball upper surface thin layer of silicon chip lower comer, inelastic strain energy density values is maximum；For
At the lower surface that soldered ball is connected with PCB, in the little skin layer of soldered ball in the overall corner of encapsulation, inelastic strain energy density values is
Greatly.Spherical solder balls RCP encapsulation 1/4th model emulation results encapsulate 1/4th model emulation results one with barrel-shaped soldered ball RCP
Cause.So, silicon chip lower comer soldered ball and encapsulation overall corner soldered ball are two key point soldered balls, on silicon chip lower comer soldered ball
Inelastic strain energy density values in the lower surface thin layer of skin layer and encapsulation overall corner soldered ball is to characterize encapsulation heat engine
Two key parameters of tool reliability.Two kinds of structural model emulation two key parameter values of gained are as shown in table 1, and barrel-shaped geometry is tied
In structure soldered ball RCP encapsulation, in the upper surface thin layer of silicon chip lower comer soldered ball, inelastic strain energy density is tied than spherical solder balls
Structure RCP encapsulation reduces about 16.9%, and in the soldered ball lower surface thin layer of overall package corner, inelastic strain energy density is than ball
The encapsulation of shape structure RCP reduces about 17.3%.This shows, the thermomechanical reliability of the RCP encapsulation of barrel-shaped geometry soldered ball is relatively
The RCP of spherical geometry soldered ball be packaged with and be obviously improved, the life-span of chip also can accordingly increase.
The RCP of table 1 conventional ball soldered ball and barrel-shaped soldered ball encapsulates the most non-resilient at key point soldered ball upper surface thin layer answering
Become energy density values
Claims (1)
1. for the barrel-shaped soldered ball redistribution encapsulating structure of VLSI chip, including RCP capsulation material, naked
Sheet, dielectric layer, RDL pad, soldered ball, PCB pad and PCB substrate, it is characterised in that described soldered ball is barrel-shaped soldered ball, on it
Lower two parts are a part for two hemisphere respectively, and centre is one section of cylinder, and soldered ball is overall in barrel-shaped.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610673588.6A CN106057761A (en) | 2016-08-14 | 2016-08-14 | Barrel-shaped solder ball redistribution packaging structure for GSIC (Grand Scale Integration Circuit) |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610673588.6A CN106057761A (en) | 2016-08-14 | 2016-08-14 | Barrel-shaped solder ball redistribution packaging structure for GSIC (Grand Scale Integration Circuit) |
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| Publication Number | Publication Date |
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| CN106057761A true CN106057761A (en) | 2016-10-26 |
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| CN201610673588.6A Pending CN106057761A (en) | 2016-08-14 | 2016-08-14 | Barrel-shaped solder ball redistribution packaging structure for GSIC (Grand Scale Integration Circuit) |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102157481A (en) * | 2011-03-31 | 2011-08-17 | 无锡中微高科电子有限公司 | Stress strain welding column for integrated circuit packaging |
| CN102157445A (en) * | 2011-03-31 | 2011-08-17 | 无锡中微高科电子有限公司 | Method for increasing connection strength of integrated circuit package |
| CN102484081A (en) * | 2009-07-02 | 2012-05-30 | 弗利普芯片国际有限公司 | Methods and structures for a vertical pillar interconnect |
| CN102832187A (en) * | 2011-06-16 | 2012-12-19 | 台湾积体电路制造股份有限公司 | Wafer level chip scale package with reduced stress on solder balls |
| US20160056116A1 (en) * | 2013-11-29 | 2016-02-25 | International Business Machines Corporation | Fabricating pillar solder bump |
| CN205900532U (en) * | 2016-08-14 | 2017-01-18 | 天津大学 | A barrel -shaped solder ball redistributes packaging structure for very large scale integrated circuit chip |
-
2016
- 2016-08-14 CN CN201610673588.6A patent/CN106057761A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102484081A (en) * | 2009-07-02 | 2012-05-30 | 弗利普芯片国际有限公司 | Methods and structures for a vertical pillar interconnect |
| CN102157481A (en) * | 2011-03-31 | 2011-08-17 | 无锡中微高科电子有限公司 | Stress strain welding column for integrated circuit packaging |
| CN102157445A (en) * | 2011-03-31 | 2011-08-17 | 无锡中微高科电子有限公司 | Method for increasing connection strength of integrated circuit package |
| CN102832187A (en) * | 2011-06-16 | 2012-12-19 | 台湾积体电路制造股份有限公司 | Wafer level chip scale package with reduced stress on solder balls |
| US20160056116A1 (en) * | 2013-11-29 | 2016-02-25 | International Business Machines Corporation | Fabricating pillar solder bump |
| CN205900532U (en) * | 2016-08-14 | 2017-01-18 | 天津大学 | A barrel -shaped solder ball redistributes packaging structure for very large scale integrated circuit chip |
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Application publication date: 20161026 |