CN106033709A - 一种酸洗蚀刻方法及清洗机 - Google Patents
一种酸洗蚀刻方法及清洗机 Download PDFInfo
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- CN106033709A CN106033709A CN201510109734.8A CN201510109734A CN106033709A CN 106033709 A CN106033709 A CN 106033709A CN 201510109734 A CN201510109734 A CN 201510109734A CN 106033709 A CN106033709 A CN 106033709A
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CN201510109734.8A CN106033709B (zh) | 2015-03-13 | 2015-03-13 | 一种酸洗蚀刻方法及清洗机 |
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CN201510109734.8A CN106033709B (zh) | 2015-03-13 | 2015-03-13 | 一种酸洗蚀刻方法及清洗机 |
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CN106033709A true CN106033709A (zh) | 2016-10-19 |
CN106033709B CN106033709B (zh) | 2019-11-22 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107799446A (zh) * | 2017-11-14 | 2018-03-13 | 扬州扬杰电子科技股份有限公司 | 一种芯片势垒前的清洗装置及清洗工艺 |
CN111584402A (zh) * | 2020-05-19 | 2020-08-25 | 陈国辉 | 一种大功率半导体器件的制造装置及其使用方法 |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN86105419A (zh) * | 1985-08-28 | 1987-04-29 | Fsi公司 | 从衬底上去除薄膜的气态方法和设备 |
US4857142A (en) * | 1988-09-22 | 1989-08-15 | Fsi International, Inc. | Method and apparatus for controlling simultaneous etching of front and back sides of wafers |
JPH04326518A (ja) * | 1991-04-26 | 1992-11-16 | Nec Corp | 半導体装置の洗浄方法 |
CN1088272A (zh) * | 1992-11-09 | 1994-06-22 | 国际商业机器公司 | 精确刻蚀和去除薄膜的新装置和方法 |
CN1551296A (zh) * | 2003-05-15 | 2004-12-01 | 株式会社神户制钢所 | 清洁装置 |
JP2010118498A (ja) * | 2008-11-13 | 2010-05-27 | Dainippon Screen Mfg Co Ltd | 基板処理方法および基板処理装置 |
US20120034761A1 (en) * | 2010-08-04 | 2012-02-09 | Applied Materials, Inc. | Method of removing contaminants and native oxides from a substrate surface |
CN103208443A (zh) * | 2012-01-11 | 2013-07-17 | 大日本网屏制造株式会社 | 基板处理方法以及基板处理装置 |
CN103578964A (zh) * | 2012-07-20 | 2014-02-12 | 中芯国际集成电路制造(上海)有限公司 | 半导体结构和鳍式场效应管的形成方法、刻蚀装置 |
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2015
- 2015-03-13 CN CN201510109734.8A patent/CN106033709B/zh active Active
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN86105419A (zh) * | 1985-08-28 | 1987-04-29 | Fsi公司 | 从衬底上去除薄膜的气态方法和设备 |
US4857142A (en) * | 1988-09-22 | 1989-08-15 | Fsi International, Inc. | Method and apparatus for controlling simultaneous etching of front and back sides of wafers |
JPH04326518A (ja) * | 1991-04-26 | 1992-11-16 | Nec Corp | 半導体装置の洗浄方法 |
CN1088272A (zh) * | 1992-11-09 | 1994-06-22 | 国际商业机器公司 | 精确刻蚀和去除薄膜的新装置和方法 |
CN1551296A (zh) * | 2003-05-15 | 2004-12-01 | 株式会社神户制钢所 | 清洁装置 |
JP2010118498A (ja) * | 2008-11-13 | 2010-05-27 | Dainippon Screen Mfg Co Ltd | 基板処理方法および基板処理装置 |
US20120034761A1 (en) * | 2010-08-04 | 2012-02-09 | Applied Materials, Inc. | Method of removing contaminants and native oxides from a substrate surface |
CN103208443A (zh) * | 2012-01-11 | 2013-07-17 | 大日本网屏制造株式会社 | 基板处理方法以及基板处理装置 |
CN103578964A (zh) * | 2012-07-20 | 2014-02-12 | 中芯国际集成电路制造(上海)有限公司 | 半导体结构和鳍式场效应管的形成方法、刻蚀装置 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107799446A (zh) * | 2017-11-14 | 2018-03-13 | 扬州扬杰电子科技股份有限公司 | 一种芯片势垒前的清洗装置及清洗工艺 |
CN107799446B (zh) * | 2017-11-14 | 2023-07-14 | 扬州扬杰电子科技股份有限公司 | 一种芯片势垒前的清洗装置 |
CN111584402A (zh) * | 2020-05-19 | 2020-08-25 | 陈国辉 | 一种大功率半导体器件的制造装置及其使用方法 |
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CN106033709B (zh) | 2019-11-22 |
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Effective date of registration: 20201222 Address after: 518119 No.1 Yan'an Road, Kuiyong street, Dapeng New District, Shenzhen City, Guangdong Province Patentee after: BYD Semiconductor Co.,Ltd. Patentee after: NINGBO BYD SEMICONDUCTOR Co.,Ltd. Address before: 518118 BYD Road, Pingshan New District, Shenzhen, Guangdong 3009 Patentee before: BYD Co.,Ltd. |
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Address after: 518119 No.1 Yan'an Road, Kuiyong street, Dapeng New District, Shenzhen City, Guangdong Province Patentee after: BYD Semiconductor Co.,Ltd. Patentee after: NINGBO BYD SEMICONDUCTOR Co.,Ltd. Address before: 518119 No.1 Yan'an Road, Kuiyong street, Dapeng New District, Shenzhen City, Guangdong Province Patentee before: BYD Semiconductor Co.,Ltd. Patentee before: NINGBO BYD SEMICONDUCTOR Co.,Ltd. |