CN106033049A - Device for measuring photoelectron emission rate on satellite material surface and method using the same - Google Patents
Device for measuring photoelectron emission rate on satellite material surface and method using the same Download PDFInfo
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- CN106033049A CN106033049A CN201510111834.4A CN201510111834A CN106033049A CN 106033049 A CN106033049 A CN 106033049A CN 201510111834 A CN201510111834 A CN 201510111834A CN 106033049 A CN106033049 A CN 106033049A
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- measurement apparatus
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Abstract
The invention provides a device for measuring photoelectron emission rate and a method using the same. The measuring device comprises a UV light source, a vacuum tank, a turntable, an electronic detector and a console. The UV light source is used for outputting the ultraviolet beam required in the measurement process; the vacuum tank is used for providing vacuum chamber space for the test; the turntable is arrange in the bottom of the vacuum tank, and used to provide proper position for material sample to be tested, electronic detector and beam; the electronic detector is used for measuring photoelectron emission intensity on the material surface; the console is used for acquiring data of ultraviolet source and electronic detector and controlling the potential of the material sample to be tested.
Description
Technical field
The present invention relates to space radiation protection evaluation areas, particularly relate to one and utilize ultraviolet light to carry out satellite material list
The measurement apparatus of face photoelectron emissions rate and using method thereof.
Background technology
Satellite surface due to the adhewsive action of space plasma, can be formed and be similar to the surface of ground electrostatic charging and fill
Electrical phenomena.Surface charging can cause and there is potential difference between satellite and spatial environments, and this is the suspension electricity of satellite surface
Position.When excessive potential difference occurs between satellite surface and spatial environments, satellite can cause
Negative 20,000 volts of high pressure, this can cause there is electric discharge between the different piece of between satellite surface and spatial environments or surface
Phenomenon (i.e. such as the static discharge on ground), or cause the apparatus measures result of satellite to be forbidden.Static discharge can discharge
Out current impulse, electromagnetic pulse and thermal pulse, current impulse and electromagnetic pulse all can directly or indirectly be coupled into and defend
The electronic system of star, interference even injures safety satellite.
The severe degree of satellite surface charging is in addition to relevant to spatial environments, also closely bound up with self of satellite.
Environmental factors owing to causing surface to charge in spatial environments includes the irradiation of sunlight, and sunlight is defended by irradiation
Star catalogue face and make satellite table surface emitting optoelectronic, and photoelectronic transmitting will can reduce in low energy particle mental retardation electricity
The collision benefit that son causes, thus improve the level of charge of satellite surface.Therefore select that there is suitable photoelectron to send out
The material penetrating rate is one of means improving satellite surface charging, then for the photoelectron emissions of metal material surface
The measurement of rate just becomes the important step of satellite surface charging protection process.
Summary of the invention
It is an object of the invention to, for solving the photoelectron emissions of the material surface of existing satellite surface charging protection
The measurement problem of rate, it is provided that the measurement apparatus of the photoelectron emissions rate of a kind of satellite material surface and using method thereof.
The measurement apparatus of the photoelectron emissions rate of satellite material surface according to an aspect of the present invention includes ultraviolet light
Source, vacuum tank, turntable, electronic detector, control station, wherein: needed for ultraviolet source is used for exporting measurement process
The ultraviolet light beam wanted；Vacuum tank provides vacuum cavity space for test；Turntable is installed on the bottom of vacuum tank, is used for
Suitable cooperation position is provided for detected materials sample and electronic detector and light beam；Electronic detector is used for measuring material
The photoelectronic emissive porwer in material surface；Control station is used for ultraviolet source, electronic detector are carried out data acquisition, and
Control the current potential of detected materials sample.
According to an embodiment, vacuum tank is made up of stainless steel material, and is cylindric.
Preferably, the internal cross-sectional area of vacuum tank is not less than 10cm2, in order to install and carry out the equipment needed for measurement,
And inner wall smooth, inner surface irregularity degree is less than 1cm, in order to reduce the KPT Scatter of inwall.
Preferably, vacuum tank should be maintained at 10 during measuring-3More than Pa vacuum, to reduce residual gas pair
Interference in electronic beam current.
According to an embodiment, ultraviolet source is connected by conveying pipe with vacuum tank skin.
According to an embodiment, turntable is weak magnetic structure, and its turntable is provided with turntable pallet, and turntable pallet can be pacified
Dress detected materials sample.
Preferably, turntable and turntable pallet are rotating in vertical direction, and slewing area is not less than 90 degree, rotate
Precision is not less than 5 degree, in order to reduces as much as possible and measures and the alignment error of test.
Preferably, in the measurement apparatus of the present invention, how light beam can be with 10 points of Continuous irradiation detected materials sample if flowing to
Clock, to avoid owing to long-term irradiation causes the surface potential of detected materials sample to change.
Preferably, the line cross-sectional diameter of light line is not more than 1cm, to avoid owing to area is excessive and cause to be measured
The electronics of the surface emitting of material sample is blocked cannot measure by incident beam.
Preferably, the cross-sectional area of electronic detector is more than the surface area of detected materials sample, and electronics inspection
Survey instrument and detected materials surface distance and be not more than 1cm, with avoid electronics that the surface of detected materials sample launched without
Method is collected.
Preferably, detected materials sample insulate with turntable pallet, and its current potential is by control station control.
Preferably, control station can be that detected materials sample provides 0 to-2kV scope current potential, to avoid due to be measured
The current potential of material sample is too high and adsorbs the electronics that its surface is launched.
The using method of the measurement apparatus of the photoelectron emissions rate of satellite material surface according to a further aspect in the invention,
Comprise the steps:
Step 101, according to needing the wave-length coverage of light beam measured, sets into the wavelength of irradiating light beam, intensity and to be measured
Angle between material sample and incident beam；
Step 102, according to the wavelength of light beam set by step 101, intensity, arranges the measurement model of electronic detector
Enclose, in order to measurement scope is mutually matched with particle beam；
Step 103, according to the data arranged in step 101 and step 102, and light intensity I of ultraviolet sourcep、
Data I that electronic detector is gatherede, obtain photoelectron emissions rate Y=I of detected materials samplee/Ip。
The measurement apparatus of the photoelectron emissions rate of the satellite material surface of the present invention, can be to include metal material, absolutely
The method of testing that measurement offer is a kind of simply, condition is feasible of the various types of materials surface light electron emission such as edge material, and
And fine vacuum is beneficial to carrying out of test experiments in holding vacuum tank.
Accompanying drawing explanation
Fig. 1 is the structural representation of the measurement apparatus of the secondary rate of the satellite material surface according to the present invention
Fig. 2 is the appearance schematic diagram of the electronic detector in the measurement apparatus of the present invention.
Fig. 3 be electronic detector in Fig. 2 along A-A to generalized section.
Fig. 4 is the angled relationships schematic diagram between the light beam according to the present invention and detected materials sample.
Fig. 5 be according to detected materials sample, electronic detector and the control station in the measurement apparatus of the present invention between
The electrical relation block diagram of data acquisition
Fig. 6 is the using method flow chart of the measurement apparatus according to the present invention.
Reference
1, ultraviolet source 2, conveying pipe 3, electronic detector
4, detected materials sample 5, turntable pallet 6, turntable
7, vacuum tank 8, passive electrode 9, electrode I
10, electrode II 11, bucking electrode 12, particle beam
13, control station
Detailed description of the invention
Below in conjunction with the accompanying drawings with the embodiment measurement apparatus to the secondary rate of the satellite material surface of the present invention
And using method is described in detail.
Fig. 1 is the structural representation of the measurement apparatus of the secondary rate of the satellite material surface according to the present invention.
As it can be seen, this measurement apparatus includes ultraviolet source 1, vacuum tank 7, turntable 6, electronic detector 3 and control station
13.The ultraviolet light beam that ultraviolet source 1 is required during exporting measurement.Vacuum tank 7 provides for measuring process
Vacuum cavity space.Turntable 6 is installed on the bottom of vacuum tank 7, is used for as detected materials sample 4 and detection of electrons
Instrument 3 and light beam provide suitable cooperation position.Electronic detector 3 is used for measuring the light on the surface of detected materials sample 4
The emissive porwer of electronics.Control station 13 is used for ultraviolet source 1 and electronic detector 3 are carried out data acquisition, and controls
The current potential of detected materials sample 4 processed.
Preferably, turntable 6 is weak magnetic structure, and is provided with turntable pallet 5, and it installs detected materials sample 4.
Preferably, vacuum tank 7 is made up of stainless steel material, and is cylindric.
Preferably, ultraviolet source 1 is connected by conveying pipe 2 with the wall of vacuum tank 7.
In the preferred case, detected materials sample 4 is the most only irradiated 1s, light during measuring by ultraviolet source 1
The line cross-sectional diameter of line is not more than 1cm, to avoid owing to area is excessive and cause the surface of detected materials sample
The electronics launched is blocked cannot measure by incident beam position.According to an alternative embodiment, light beam transversal
Face diameter is not more than 1um.
Fig. 2 and Fig. 3 be respectively electronic detector 3 structural representation and along A-A to sectional view.Can from figure
Seeing, there is a perforate centre of electronic detector 3, and this perforate is easy to light beam line and is passed through and incide detected materials sample
The surface of product 4.Preferably, the cross-sectional area of electronic detector 3 is more than the surface area of detected materials sample 4,
And electronic detector 3 is not more than 1cm, to avoid detected materials sample 4 with the surface distance of detected materials sample 4
The electronics launched of surface cannot be collected.According to a specific embodiment, detected materials sample 4 to electronics is examined
The surface distance surveying instrument 3 is 5mm position.
In a preferred embodiment, detected materials sample 4 insulate with turntable pallet 5, and its current potential is controlled by control station 13.
In a preferred embodiment, control station 13 provides the current potential of 0 to-2kV scope for detected materials sample 4, to keep away
Exempt from due to the current potential of detected materials sample 4 is too high and the electronics of adsorbing material surface emitting.
In a preferred embodiment, the internal cross-sectional area of vacuum tank 7 is 100cm2, in order to install and carry out test institute
The equipment needed, and its inner wall smooth, inner surface irregularity degree is less than 1mm, in order to reduce the KPT Scatter of inwall.
In a preferred embodiment, turntable pallet 5 can rotate in vertical direction, and slewing area is not less than 90 degree, turns
Dynamic precision is not less than 5 degree.
In a preferred embodiment, vacuum tank 7 phase at the trial should be maintained at 10-3The vacuum of more than Pa, to reduce
Residual gas is for the photoelectronic interference launched.
Fig. 4 is that the light beam of the present invention carrys out the schematic diagram of the angle of formation between flow path direction and detected materials sample.Obviously,
The difference of the secondary under identical energy different angles incidence can be obtained by changing this angle.
Fig. 5 is that the electrical relation between the detected materials sample 4 of the present invention, electronic detector 3 and control station 13 is shown
Meaning block diagram.Control station 13 is for controlling detected materials sample 4, the current potential of electronic detector 3, and gathers electronics inspection
Survey the flux data of instrument 3.
Fig. 6 is the flow chart of the using method of measurement apparatus of the present invention, comprises the steps:
Step 101: according to needing the wave-length coverage of light beam measured, sets into the wavelength of irradiating light beam and intensity and to be measured
Angle between material sample 4 and particle beam 12；
Step 102: according to wavelength and the intensity of the light beam set by step 101, the measurement of electronic detector 3 is set
Scope, in order to measurement scope is mutually matched with particle beam 12；
Step 103: according to the data arranged in step 101 and step 102, and light intensity I of ultraviolet source 1p、
Data I that electronic detector 3 is gatherede, obtain photoelectron emissions rate Y=I of detected materials sample 4e/Ip。
It should be noted last that, above example is only in order to illustrate technical scheme and unrestricted.Although
With reference to embodiment, the present invention is described in detail, it will be understood by those within the art that, to the present invention
Technical scheme modify or equivalent, without departure from the spirit and scope of technical solution of the present invention, it is equal
Should contain in the middle of scope of the presently claimed invention.
Claims (13)
1. a measurement apparatus for photoelectron emissions rate, including: ultraviolet source, vacuum tank, turntable, detection of electrons
Instrument, control station, wherein: ultraviolet source is for exporting the ultraviolet light beam required for measurement process；Vacuum tank is test
Vacuum cavity space is provided；Turntable is installed on the bottom of vacuum tank, is used for as detected materials sample and electronic detector
And light beam provides suitable cooperation position；Electronic detector is used for measuring the photoelectronic emissive porwer of material surface；Control
Platform processed is used for carrying out ultraviolet source, electronic detector data acquisition, and controlling the current potential of detected materials sample.
Measurement apparatus the most according to claim 1, it is characterised in that: vacuum tank is made up of stainless steel material,
And be cylindric.
Measurement apparatus the most according to claim 1 and 2, it is characterised in that: ultraviolet source leads to vacuum tank skin
Cross conveying pipe to connect.
Measurement apparatus the most according to claim 1 and 2, it is characterised in that: the internal cross-sectional area of vacuum tank
Not less than 10cm2, and inner wall smooth, inner surface irregularity degree is less than 1cm.
Measurement apparatus the most according to claim 1 and 2, it is characterised in that: vacuum tank is during measuring
10 should be maintained at-3The vacuum of more than Pa.
Measurement apparatus the most according to claim 1, it is characterised in that: turntable is weak magnetic structure, and its turntable is pacified
Equipped with turntable pallet, turntable pallet is used for installing detected materials sample.
Measurement apparatus the most according to claim 6, it is characterised in that: turntable and turntable pallet are in vertical direction
Being rotating, slewing area is not less than 90 degree, and rotation precision is not less than 5 degree.
Measurement apparatus the most according to claim 1, it is characterised in that: light beam flow to many Continuous irradiation and waits to measure and monitor the growth of standing timber
Material sample 10 minutes.
9. according to the measurement apparatus described in claim 1 or 8, it is characterised in that: the line cross section of light line is straight
Footpath is not more than 1cm.
Measurement apparatus the most according to claim 1, it is characterised in that: the cross-sectional area of electronic detector
More than the surface area of detected materials sample, and electronic detector is not more than 1cm with detected materials surface distance.
11. measurement apparatus according to claim 1, it is characterised in that: detected materials sample and turntable pallet
Insulation, its current potential is by control station control.
12. measurement apparatus according to claim 1, it is characterised in that: control station is that detected materials sample carries
Current potential for 0 to-2kV scope.
The survey of the photoelectron emissions rate of 13. 1 kinds of satellite material surface used as described in any one of claim 1-12
The using method of amount device, comprises the steps:
Step 101, according to needing the wave-length coverage of light beam measured, sets into the wavelength of irradiating light beam, intensity and to be measured
Angle between material sample and incident beam；
Step 102, according to the wavelength of light beam set by step 101, intensity, arranges the measurement model of electronic detector
Enclose；
Step 103, according to the data arranged in step 101 and step 102, and light intensity I of ultraviolet sourcep、
Data I that electronic detector is gatherede, obtain photoelectron emissions rate Y=I of detected materials samplee/Ip。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510111834.4A CN106033049A (en) | 2015-03-13 | 2015-03-13 | Device for measuring photoelectron emission rate on satellite material surface and method using the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510111834.4A CN106033049A (en) | 2015-03-13 | 2015-03-13 | Device for measuring photoelectron emission rate on satellite material surface and method using the same |
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| CN106033049A true CN106033049A (en) | 2016-10-19 |
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| CN201510111834.4A Pending CN106033049A (en) | 2015-03-13 | 2015-03-13 | Device for measuring photoelectron emission rate on satellite material surface and method using the same |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109726458A (en) * | 2018-12-18 | 2019-05-07 | 兰州空间技术物理研究所 | A kind of geostationary orbit material inequality electrification emulation mode |
| CN109813974A (en) * | 2018-12-18 | 2019-05-28 | 兰州空间技术物理研究所 | A kind of geostationary orbit material inequality charging test device |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109726458A (en) * | 2018-12-18 | 2019-05-07 | 兰州空间技术物理研究所 | A kind of geostationary orbit material inequality electrification emulation mode |
| CN109813974A (en) * | 2018-12-18 | 2019-05-28 | 兰州空间技术物理研究所 | A kind of geostationary orbit material inequality charging test device |
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Application publication date: 20161019 |
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