CN106031029B - 用于集成电路中的信号的功率放大的系统、方法及装置 - Google Patents

用于集成电路中的信号的功率放大的系统、方法及装置 Download PDF

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Publication number
CN106031029B
CN106031029B CN201580009878.4A CN201580009878A CN106031029B CN 106031029 B CN106031029 B CN 106031029B CN 201580009878 A CN201580009878 A CN 201580009878A CN 106031029 B CN106031029 B CN 106031029B
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China
Prior art keywords
power
armature winding
power amplifier
group
coupled
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CN201580009878.4A
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Chinese (zh)
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CN106031029A (zh
Inventor
阿普·西瓦达斯
阿洛克·乔希
克里希纳斯瓦米·程加拉吉安
拉凯什·库马尔
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Texas Instruments Inc
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Texas Instruments Inc
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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/211—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/195—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
    • H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/72—Gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/537—A transformer being used as coupling element between two amplifying stages
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/541—Transformer coupled at the output of an amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/20—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F2203/21—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F2203/211—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
    • H03F2203/21145—Output signals are combined by switching a plurality of paralleled power amplifiers to a common output
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/72—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
    • H03F2203/7221—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal the gated amplifier being switched on or off by a switch at the output of the amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/72—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
    • H03F2203/7236—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal the gated amplifier being switched on or off by putting into parallel or not, by choosing between amplifiers by (a ) switch(es)

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Amplifiers (AREA)
  • Transmitters (AREA)
CN201580009878.4A 2014-01-27 2015-01-27 用于集成电路中的信号的功率放大的系统、方法及装置 Active CN106031029B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/165,251 2014-01-27
US14/165,251 US9450546B2 (en) 2014-01-27 2014-01-27 System, method and device for power amplification of a signal in an integrated circuit
PCT/US2015/013148 WO2015113069A1 (en) 2014-01-27 2015-01-27 System, method and device for power amplification of a signal in an integrated circuit

Publications (2)

Publication Number Publication Date
CN106031029A CN106031029A (zh) 2016-10-12
CN106031029B true CN106031029B (zh) 2019-10-22

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201580009878.4A Active CN106031029B (zh) 2014-01-27 2015-01-27 用于集成电路中的信号的功率放大的系统、方法及装置

Country Status (4)

Country Link
US (1) US9450546B2 (cg-RX-API-DMAC7.html)
JP (1) JP6741370B2 (cg-RX-API-DMAC7.html)
CN (1) CN106031029B (cg-RX-API-DMAC7.html)
WO (1) WO2015113069A1 (cg-RX-API-DMAC7.html)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10128875B1 (en) * 2018-03-30 2018-11-13 Mitsubishi Electric Research Laboratories, Inc. Methods and system of a digital transmitter with reduced quantization noise
WO2022259892A1 (ja) * 2021-06-10 2022-12-15 株式会社村田製作所 増幅回路及び高周波回路
WO2023162655A1 (ja) * 2022-02-24 2023-08-31 株式会社村田製作所 ドハティ増幅回路
US12482915B2 (en) 2023-04-18 2025-11-25 Apple Inc. Transformer based series Doherty power amplifier
US20250047247A1 (en) * 2023-08-04 2025-02-06 Shenzhen MUYE Microelectronic Technologies Co., LTD Transformer Power Combiner Apparatus and Control Method
WO2025243345A1 (ja) * 2024-05-20 2025-11-27 株式会社ソシオネクスト 出力合成用トランス回路

Citations (3)

* Cited by examiner, † Cited by third party
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US6294955B1 (en) * 2000-04-07 2001-09-25 Harris Corporation Apparatus and method for use in disconnecting and/or replacing one of a plurality of power amplifiers in a transmitter while the transmitter is operating
CN101490938A (zh) * 2006-07-07 2009-07-22 剑桥半导体有限公司 开关模式电源系统
CN102459863A (zh) * 2009-05-08 2012-05-16 费德罗-莫格尔点火公司 具有自调节功率放大器的电晕点火系统

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Publication number Priority date Publication date Assignee Title
FR1495534A (fr) 1966-07-29 1967-09-22 Thomson Houston Comp Francaise Perfectionnements aux amplificateurs de puissance à transistors
JPS5992608A (ja) * 1982-11-19 1984-05-28 Oki Electric Ind Co Ltd 電力増幅回路
US4965530A (en) * 1989-09-26 1990-10-23 General Electric Company Parallelled amplifier with switched isolation resistors
RU2117381C1 (ru) 1997-03-12 1998-08-10 Научно-производственное предприятие "Полет" Усилитель мощности радиопередатчика
BR9909353A (pt) * 1998-04-02 2000-12-12 Ericsson Inc Amplificador de potência, processo e aparelho para amplificar um sinal de entrada de ca de amplitude variante e fase variante usando uma fonte de alimentação de cc, processos para amplificar um sinal de entrada de amplitude variante e fase variante a um nìvel de potência desejado, para gerar de um sinal de amplitude variante e fase variante, uma pluralidade de sinais de amplitude constante e fase variante, e para sintetizar de uma forma de onda de entrada, uma forma de onda de saìda em uma carga usando uma fonte de alimentação de cc, transmissor para produzir um sinal de saìda de amplitude variante em um nìvel de potência desejado e em uma frequência portadora desejada, de um sinal de entrada de amplitude variante e fase variante, sistema para gerar de um sinal de amplitude variante e fase variante, uma pluralidade de sinais de amplitude constante e fase variante, e, aparelho para sintetizar de uma forma de onda de entrada, uma forma de onda de saìda em uma carga usando uma fonte de alimentação de cc
US7952433B2 (en) * 2008-11-25 2011-05-31 Samsung Electro-Mechanics Company Power amplifiers with discrete power control
JP5459169B2 (ja) * 2010-09-30 2014-04-02 富士通株式会社 増幅回路
KR101197904B1 (ko) * 2011-04-04 2012-11-05 삼성전기주식회사 전력 결합기, 이를 갖는 전력 증폭 모듈 및 신호 송수신 모듈
US9306502B2 (en) * 2011-05-09 2016-04-05 Qualcomm Incorporated System providing switchable impedance transformer matching for power amplifiers
JP5719259B2 (ja) * 2011-09-06 2015-05-13 ルネサスエレクトロニクス株式会社 高周波電力増幅装置
JP5319006B2 (ja) * 2012-10-10 2013-10-16 ルネサスエレクトロニクス株式会社 電力増幅回路

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6294955B1 (en) * 2000-04-07 2001-09-25 Harris Corporation Apparatus and method for use in disconnecting and/or replacing one of a plurality of power amplifiers in a transmitter while the transmitter is operating
CN101490938A (zh) * 2006-07-07 2009-07-22 剑桥半导体有限公司 开关模式电源系统
CN102459863A (zh) * 2009-05-08 2012-05-16 费德罗-莫格尔点火公司 具有自调节功率放大器的电晕点火系统

Also Published As

Publication number Publication date
JP6741370B2 (ja) 2020-08-19
JP2017509224A (ja) 2017-03-30
WO2015113069A1 (en) 2015-07-30
US9450546B2 (en) 2016-09-20
US20150214907A1 (en) 2015-07-30
CN106031029A (zh) 2016-10-12

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