CN106024803A - Light Irradiation Module - Google Patents
Light Irradiation Module Download PDFInfo
- Publication number
- CN106024803A CN106024803A CN201610180618.XA CN201610180618A CN106024803A CN 106024803 A CN106024803 A CN 106024803A CN 201610180618 A CN201610180618 A CN 201610180618A CN 106024803 A CN106024803 A CN 106024803A
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- Prior art keywords
- irradiation module
- light irradiation
- substrate
- metallic substrates
- led chip
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49175—Parallel arrangements
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19107—Disposition of discrete passive components off-chip wires
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
Abstract
The invention provides a light irradiation module by which heat resistance of a substrate is reduced and a small-size refrigeration structure can be employed. The light irradiation module is provided with: the substrate; a plurality of LED chips which are arrnaged on the surface of the substrate and emit UV light in the direction that is orthogonal to the surface of the substrate; and a heat dissipating part which is tightly arranged on the back side of the substrate and releases heat generated in the LED chips to exterior. The substrate is provided with a metal substrate supplying power to the first electrode and an insulation part which is tightly conencted to the bakc side of the sutrate, wherein a plurality of the LED chips are arranged on the surface of the metal substrate. The metal substrate is electrically connected to a first electrode that is formed on the back side of the LED chips so as to supply power to the first electrode. A circuit board, which is electrically connected to a second electrode on the surface of the LED chips and supplies power to the second electrode, is disposed on the metal substrate. The thickness of the metal substrate is 1.0-2.0 mm, and the thickness of the insulation layer is lower than that of the metal substrate.
Description
Technical field
The present invention relates to a kind of light irradiation module being such as equipped on ultraviolet lamp, particularly relate to a kind of use and send out
The light irradiation module of the light-emitting components such as optical diode LED (Light Emitting Diode).
Background technology
In the past, in order to make to be used as the binding agent of flat faced display FPD (Flat Panel Display) periphery
Ultraviolet hardening resin or the ultraviolet ray hardening type used as sheet-fed offset printing ink are ink curing, need to use purple
Outer light irradiation device.
As UV curing apparatus, in the past, it is well known that using high-pressure mercury-vapor lamp or hydrargyrum hernia lamp etc. as light
The lamp-type irradiation unit in source, but in recent years, from reducing power consumption, long lifetime, the densification requirement of plant bulk, open
Send out a kind of replacement conventional discharge lamps, UV LED LED (Light Emitting Diode) has been come sharp as light source
UV curing apparatus (such as, patent documentation 1).
UV curing apparatus described in patent documentation 1 possesses substrate (matrix) and two-dimensional arrangement in multiple ultraviolets of substrate
LED, therefore obtains the ultraviolet light that exposure rate is strong.
Prior art literature
Patent documentation
Patent documentation 1: No. 5582967 description of Japanese Patent Publication No.
Summary of the invention
Invent problem to be solved:
Constructing as described in patent document 1, when using UV LED LED as light source, electrical power is partially converted into
Heat, so, UV LED LED the heat self distributed can cause asking of luminous efficiency and service life reduction
Topic.Additionally, structure as described in patent document 1, if being equipped with the device of multiple UV LED LED on substrate
Time, the UV LED LED becoming thermal source increases, so the problems referred to above become more deep.Therefore, by ultra-violet light-emitting
In the light irradiation device that diode (LED) uses as light source, the general rear side used at substrate is provided with the refrigeration knots such as radiator
Structure, the structure of suppression UV LED LED heating.
But, as described in patent document 1, when the substrate being made up of insulating barrier configures UV LED LED, base
The thermal resistance of plate is big, for sufficiently cool UV LED LED, needs the large-scale refrigeration structure that refrigerating capacity is strong, then exists
The problem that device self maximizes.
The present invention forms in view of the above circumstances, its object is to provide a kind of thermal resistance reducing substrate, and can adopt
Light irradiation module with the most small-sized cooling structure.
Method for solving problem:
For reaching above-mentioned purpose, the present invention is that one possesses: substrate；It is placed in substrate surface, and to substrate surface just
Multiple LEDs (the Light Emitting Diode) chip of the direction injection ultraviolet handed over；With compact configuration in
The heat of generation in LED chip is also discharged into the light irradiation module of the thermal component of outside by substrate back, its
Being characterised by, substrate has and is placed with multiple LED chip on surface, and be formed at LED core
1st electrode at the back side of sheet is electrically connected with, and supplies the plate-like metal base of electric power to the 1st electrode and is closely located at metallic substrates
The insulation division of rear side, is configured with and is formed at the 2nd electrode electricity on the surface of each LED chip on the metallic substrate
Property connect, and to the 2nd electrode supply electric power wiring board, the thickness of described metallic substrates is 1.0～2.0mm, the thickness of insulation division
Spend thinner than the thickness of metallic substrates.
According to this structure, it is configured with, in the underface of LED chip, the metallic substrates that thermal resistance is low, therefore carries
The refrigerating capacity of high light emitting diode LED chip, so more small-sized thermal component can be used.
Furthermore it is preferred that the thickness of insulation division is 100～600 μm.
Furthermore it is preferred that multiple LED chips are connected in parallel.
During additionally, overlook, substrate is rectangular, it is possible to multiple LED chips along parallel two of substrate
While the mode being arranged side-by-side string is constituted.Additionally, in such a situation it is preferred to be configured at multiple LED cores
Multiple smooth irradiation module can be connected in the orientation of sheet.Additionally, in such a situation it is preferred to metallic substrates is multiple luminous two
The one end of the orientation of pole pipe LED chip has the exposed division of surface exposure, when connection has multiple smooth irradiation module
Wait, the wiring board of the light irradiation module of adjacent side and the exposed division of other light irradiation module close configuration, wiring board mutually
It is electrically connected with exposed division.
During additionally, overlook, substrate is rectangular, it is possible to be configured to multiple rectangular configuration of LED chip two dimensional
In substrate.Additionally, in such a situation it is preferred to wiring board is configured to be enclosed in around each LED chip.This
Outward, in this case, it is possible to be configured to can to connect in the orientation of the side of multiple LED chips multiple
Light irradiation module.Additionally, in such a situation it is preferred to the metallic substrates arrangement in the side of multiple LED chips
There is on the one end in direction the exposed division of surface exposure, connection has multiple smooth irradiation module when, adjacent side
The close configuration mutually of the wiring board of light irradiation module and the exposed division of other light irradiation module, wiring board electrically connects with exposed division
Connect.
Additionally, overlook time, substrate is rectangular, multiple LED chips along substrate parallel both sides side by side
Configuration N row (N is the integer of more than 1), preferably metallic substrates are orthogonal with the orientation of multiple LED chips
Be divided into multiple on direction, wiring board using each LED chip of being placed in each metallic substrates after segmentation as
One group, each group is all electrically connected with the 2nd electrode, and the adjacent wiring board in the metallic substrates of side is electrical with other metallic substrates
Connect.Additionally, in such a situation it is preferred to there is insulating element between each metallic substrates after singulation.
Invention effect:
As it has been described above, the light irradiation module in the present invention can reduce the thermal resistance of substrate, more small-sized refrigeration can be used
Structure, compact conformation.
Accompanying drawing explanation
Fig. 1 is the top view briefly constituted of the light irradiation module involved by the 1st embodiment of the explanation present invention.
Fig. 2 is the side view briefly constituted of the light irradiation module involved by the 1st embodiment of the explanation present invention.
Fig. 3 is the equivalent circuit diagram of the light irradiation module involved by the 1st embodiment of the explanation present invention.
Fig. 4 is to represent to connect two light irradiation module 100A involved by the 1st embodiment of the present invention, the vertical view of 100B
Figure.
Fig. 5 is to represent to connect two light irradiation module 100A involved by the 1st embodiment of the present invention, the equivalent electric of 100B
Lu Tu.
Fig. 6 is the top view briefly constituted of the light irradiation module involved by the 2nd embodiment of the explanation present invention.
Fig. 7 is that the A-A of Fig. 6 is to sectional view.
Fig. 8 is the equivalent circuit diagram of the light irradiation module involved by the 2nd embodiment of the explanation present invention.
Fig. 9 is to represent to connect two light irradiation module 200A involved by the 2nd embodiment of the present invention, the vertical view of 200B
Figure.
Figure 10 is to represent to connect two light irradiation module 200A involved by the 2nd embodiment of the present invention, the equivalence of 200B
Circuit diagram.
Figure 11 is the top view briefly constituted of the light irradiation module involved by the 3rd embodiment of the explanation present invention.
Figure 12 is that the B-B of Figure 11 is to sectional view.
Figure 13 is the equivalent circuit diagram of the light irradiation module involved by the 3rd embodiment of the explanation present invention.
Figure 14 is the manufacture method of the metallic substrates of the light irradiation module involved by the 3rd embodiment of the explanation present invention
Figure.
In figure:
100,200,300 smooth irradiation module
110,210,310 substrate
112,212,312,312a, 312b, 312c metallic substrates
112a, 212a junction surface
114,214,314 insulation division
120,220,320 LED chip
120a exit facet
125,225,325 bonding wire
130,230,330,331,332 wiring board
130a, 230a Wiring pattern
150,250 radiator
150a, 250a fin
160 joint elements
231,232,233,234,235,236,237,238,239 peristome
350a, 350b bus
360a, 360b go between
Detailed description of the invention
Hereinafter, referring to the drawings embodiments of the present invention are described in detail.Furthermore, in figure identically or comparably
The additional identical symbol of part, and no longer explain over and over again.
1st embodiment:
Fig. 1～Fig. 3 is the figure briefly constituted of the light irradiation module 100 involved by the 1st embodiment of the explanation present invention.Figure
1 is the top view of the 100 of light irradiation module, and Fig. 2 is the side view of light irradiation module 100, Fig. 3 be light irradiation module 100 etc.
Effect circuit diagram.The light irradiation module 100 of the present embodiment is to be equipped on UV curing apparatus etc. and send the device of ultraviolet light.
As shown in FIG. 1 to 3, the light irradiation module 100 of the present embodiment possesses: substrate 110；It is placed in substrate 110 surface
Multiple (in Fig. 1～Fig. 3 being 5) LED chip 120；It is configured at base along LED chip 120
The wiring board 130 on plate 110 surface；With the radiator 150 being configured at substrate 110 back side.Furthermore, in this manual, will be from light
The direction of advance of the ultraviolet light of irradiation module 100 injection is set to Z-direction, by the orientation of LED chip 120
It is set to X-direction, the direction orthogonal with X-direction and Z-direction is set to Y direction and is illustrated.
Substrate 110 is the substrate of a kind of two-layer structure being made up of with insulation division 114 sheet metal substrate 112.Metal
Substrate 112 be a kind of by the metal material (such as, cylinder, aluminum) with electric conductivity constitute lamellar (such as, thickness be 1.0～
2.0mm) parts, are placed with 5 LED chips 120 on surface along X-direction.The metallic substrates of the present embodiment
112 are electrically connected with the LED drive circuit not illustrated, and have and will be supplied by LED drive circuit
Power supply to the function of the anode terminal (not illustrating) of LED chip 120.
Insulation division 114 is a kind of by base material (such as, pottery (aluminium nitride, aluminium oxide, silicon nitride, the carbonization with insulating properties
Silicon etc.)) the lamellar parts that constitute, when being close to the rear side of metallic substrates 112, fixed by bonding etc..
Detailed content describes later, but the insulation division 114 of the present embodiment is configured to (example thinner than the thickness of metallic substrates 112
As, thickness is 100～600 μm).Furthermore, the insulation division 114 in other embodiment also can be by the back side of metallic substrates 112
Form film to constitute.
As shown in FIG. 1 to 3, in the present embodiment, make optical axis consistent in the Z-axis direction, along X-direction near configuration
5 LED chips 120.LED chip 120 has such as 1.0mm (X-direction length) × 1.0mm
Profile (Fig. 1) rectangular during the vertical view of (Y direction length), possesses cathode terminal at end face (that is, exit facet 120a) and (does not expects
Show), anode terminal (not illustrating) is possessed in bottom surface.And, if applying electric current between anode terminal and cathode terminal, in luminescence
Layer (not illustrating) produces ultraviolet light (such as, wavelength is the light of 385nm), penetrates from exit facet 120a.In the present embodiment, send out
Bottom surface (that is, anode terminal) towards metallic substrates 112, and is placed in metallic substrates 112 by optical diode LED chip 120, by
Adhesive (not illustrating) is engaged in metallic substrates 112.Adhesive for mechanicalness and electrically engages light emitting diode for one
LED chip 120 and the parts of metallic substrates 112, such as, can use silver (Ag) cream with electric conductivity.
Wiring board 130 is a kind of by base material (such as, the glass with insulating properties being formed with Wiring pattern 130a on surface
Epoxy resin, paper epoxy resin, pottery etc.) the lamellar parts that constitute.Wiring pattern 130a is for for each light emitting diode
The universal metal pattern of the cathode terminal supply electric power of LED chip, by pair of engaging lead-in wire and each LED chip
The cathode terminal of 120 connects.Additionally, the wiring board 130 of the present embodiment is electrical with the LED drive circuit not illustrated
Connect, have the cathode terminal of the power supply of LED drive circuit supply to LED chip 120
The function of son.
Radiator 150 is a kind of metal (such as, copper, aluminum) thermal component processed with multiple fin 150a, such as, borrows
The back side of insulation division 114 it is tightly fixed to by Heat sink grease.As it has been described above, by arranging radiator at the back side of substrate 110
150, it is possible to the heat produced in each LED chip 120 is discharged in air effectively.
As it has been described above, the anode terminal of the 5 of the present embodiment LED chips 120 is engaged in metallic substrates
112, cathode terminal is connected to Wiring pattern 130a.Thus, as it is shown on figure 3,5 LED chips 120 are in parallel even
Connect.If supplying electric power, then 5 luminescences two from LED drive circuit to metallic substrates 112 and Wiring pattern 130a
Pole pipe LED chip 120 is luminous, penetrates the ultraviolet light extended along X-direction from light irradiation module 100.
If each LED chip 120 is luminous, then the problem that there is the heating of each LED chip 120.
In the case of use sends the LED chip 120 of ultraviolet light as shown in this embodiment, the electric power of supply is (such as,
About 2/3 2.5W) can become heat, so above-mentioned heating problem becomes the most notable.
Accordingly, with respect to this point, present inventor conducts in-depth research.As a result, if drawn and will configure in the past
LED chip in the insulative substrate such as glass epoxy substrate is directly arranged in the metal base that heat conductivity is good
On plate, insulating barrier is arranged on the structure at the back side of metal substrate, it is possible to conduction LED chip 120 effectively
The idea of heat.And, present inventor further further investigate find by optimize metal substrate thickness with
And the thickness of insulating barrier, it is possible to effectively freeze.
Hereinafter, the simulation being carried out present inventor illustrates, and to metal substrate (that is, metallic substrates
112) thickness and the condition of the thickness of insulating barrier (that is, insulation division 114) are illustrated.
Table 1 is to represent in the light irradiation module 100 of above-mentioned the present embodiment, changes metallic substrates 112 and insulation division 114
Thickness, and the table of the result of the operating temperature of simulation luminous diode LED chips 120.Additionally, table 2 represents relative to this reality
Execute the comparative example of the light irradiation module 100 of example, for representing in the biography being arranged in insulative substrate by LED chip
During system is constituted (that is, in the composition of the configuration reversion of the metallic substrates 112 with insulation division 114 that make the present embodiment), change insulation
The thickness of property substrate and the metallic substrates being configured at its back side, and the result of the operating temperature of simulation luminous diode LED chips
Table.
[table 1]
[table 2]
Furthermore, simulated conditions are as described below.
(1) LED: 1mm angle
(2) metallic substrates material: copper
(3) insulation division (insulative substrate): 10W/mK product
(4) electrical power: 2.5W
(5) Heat sink grease: 10W/mK product, 0.05mm is thick
(6) radiator: aluminum 25mm angle needle type heat radiator (highly 25mm)
(7) refrigeration modes: natural air cooling (LED is down)
(8) external temperature: 25 DEG C
Relatively Tables 1 and 2 understands, even if the thickness of metallic substrates and insulation division (insulative substrate) is the most identical, is sending out
Structure (that is, the light irradiation module 100 of the present embodiment of the underface configuration metallic substrates 112 of optical diode LED chip 120
Structure) compared with the structure in the underface of LED chip 120 configuration insulation division (insulative substrate), it is possible to make
The operating temperature of LED chip 120 reduces about 8～9 DEG C.This be due to LED chip just under
The material of the composition of side's configuration, is that the thermal resistance by metallic substrates 112 is less than the thermal resistance of insulation division (insulative substrate) caused.
Additionally, according to table 1, if metallic substrates 112 is thickened to 2.0mm by 1.0mm, then understand and can make light emitting diode
The operating temperature of LED chip 120 reduces about 0.6～0.7 DEG C.If additionally, insulation division 114 is thinned to 100 μm by 600 μm,
Then understand and the operating temperature of LED chip 120 can be made to reduce about 1.3～1.5 DEG C.But, by adjusting metal
The reduction of the operating temperature of the LED chip 120 that the thickness of substrate 112 and the thickness of insulation division 114 are brought
Compared with amount and the effect brought by the configuration changing metallic substrates 112 and insulation division 114 the fewest.Thereby, it is possible to speculate
If going out the underface that metallic substrates 112 is arranged in LED chip 120, the heat of LED chip 120
Amount moment in metallic substrates 112 becomes big.
From above simulation experiment result, the present embodiment is that metallic substrates 112 is arranged in LED chip
The underface of 120, in the range of being set in 1.0～2.0mm by its thickness.If additionally, metallic substrates 112 being arranged in light-emitting diodes
The underface of pipe LED chip 120, from the necessity to LED chip power supply, causes and needs metallic substrates
112 are powered.Therefore, the present embodiment is in order to stablize and positively carry out from metallic substrates 112 to each LED core
The power supply of sheet 120, arranges insulation division 114 between metallic substrates 112 and radiator 10.Furthermore, by its of the application
He understands in simulation experiment, if if the thickness of insulation division 114 is thinner than the thickness of metallic substrates 112, then has sufficient effect, excellent
Select 100～600 μm.
Additionally, the light irradiation module 100 of the present embodiment is configured to connect multiple smooth irradiation module along X-direction
100.And, in the light irradiation module 100 of the present embodiment, engage with the anode terminal of 5 LED chips 120
Metallic substrates 112 is exposed in the side identical with the exit facet 120a of LED chip 120, so, utilize this point,
The multiple LED light irradiation module 100 linked can be electrically connected with.Specifically, as shown in FIG. 1 to 3, circuit
The length of the X-direction of plate 130 is shorter than the length of the X-direction of substrate 110, in the outside of wiring board 130 (in Fig. 1, Fig. 2
Left side) metallic substrates 112 on be formed with junction surface 112a (exposed division), it is possible to will link multiple smooth irradiation module
100 are electrically connected with.
Fig. 4～Fig. 5 is the figure representing and connecting the structure having 2 light irradiation module 100A, 100B.Fig. 4 is for being connected to illumination
Penetrating the top view of module 100A, 100B, Fig. 5 is the equivalent circuit diagram being connected to light irradiation module 100A, 100B.Furthermore, at Fig. 4
～in Fig. 5, for convenience of description, the light irradiation module 100 diacritic " 100A " to left side, the light irradiation module 100 to right side
Diacritic " 100B ", but the light of light irradiation module 100A and the structure of light irradiation module 100B and above-mentioned the present embodiment irradiates
Module 100 is identical.
As shown in Fig. 4～Fig. 5, light irradiation module 100A and light irradiation module 100B are in continuous print mode in the X-axis direction
Compact configuration, is linked by the support member not illustrated and supports.And, link light irradiation module 100A and light irradiation module
During 100B, the Wiring pattern 130a of light irradiation module 100A is close configuration with the junction surface 112a phase of light irradiation module 100B, logical
Crossing and configure joint elements 160 in seam portion, both can be electrically connected with.Joint elements 160 are for a kind of by having electric conductivity
The elongated member that metal (such as, copper, aluminum etc.) is constituted, its one end waits the Wiring pattern with light irradiation module 100A by welding
130a connects, and its other end is connected with the metallic substrates 112 of light irradiation module 100B by welding grade.Thus, such as Fig. 5 institute
Showing, light irradiation module 100A is electrically connected in series by joint elements 160 with light irradiation module 100B.Thus, if being connected in series
Multiple smooth irradiation module 100, high LED driving voltage is necessary, but power consumption is without rising.
As it has been described above, the light irradiation module 100 of the present embodiment can connect easily along X-direction, thereby, it is possible to
It is readily available the ultraviolet light of expectation line length.Furthermore, though the present embodiment is a kind of X-direction in light irradiation module 100
One end side (left side in Fig. 1, Fig. 2) arranges the structure of junction surface 112a, but also is able to set in the one end side of Y direction
Put junction surface 112a, in this case, light irradiation module 100 can be connected along Y direction.
Though being description of the present embodiment above, but the invention is not limited in above-mentioned structure, the technology in the present invention is thought
Various deformation can be carried out in the range of thinking.
Such as, although the light irradiation module 100 in the present embodiment is to possess 5 LED chips 120, but
Not limiting the number of LED chip 120, light irradiation module 100 can also have at least 2 light emitting diodes
LED chip 120.
Additionally, the LED chip 120 of the present embodiment is to illustrate as the element sending ultraviolet light
, but it is not limited to this structure, such as, LED chip 120 can also be to send visible domain or red
The element of the light of outer area of light.
2nd embodiment:
Fig. 6～Fig. 8 is the figure of the brief configuration of the light irradiation module 200 involved by the 2nd embodiment of the explanation present invention.Figure
6 is the top view of light irradiation module 200, and Fig. 7 is the A-A profile of Fig. 6, and Fig. 8 is the equivalent circuit diagram of light irradiation module 200.
The LED chip 220 of the light irradiation module 200 of the present embodiment is with the sample of 3 (X-direction) × 3 (Y direction)
State is configured to two-dimensional-matrix-like over the substrate 210, and this point is different from the light irradiation module 100 of the 1st embodiment.
As shown in Figure 6 to 8, the light irradiation module 200 of the present embodiment possesses substrate 210；It is placed in substrate 210 surface
Multiple (in Fig. 4 being 9) LED chip 220；It is configured at base in the way of surrounding LED chip 220
The wiring board 230 on plate 210 surface；With the radiator 250 being arranged in substrate 210 back side.
Substrate 210 is the substrate identical with the substrate 110 of the 1st embodiment, for one by sheet metal substrate 212 with exhausted
The substrate of the double-layer structure that edge 214 is constituted.9 LED chips 220 on the surface of metallic substrates 212 are with 3 (X
Direction of principal axis) × the pattern of 3 (Y directions) is configured to two-dimensional-matrix-like over the substrate 210.
Insulation division 214 is the parts identical with the insulation division 114 of the 1st embodiment, to be close to the rear side of metallic substrates 212
State fixed by bonding etc..
LED chip 220 is the element identical with the LED chip 120 of the 1st embodiment, with
Bottom surface (that is, anode terminal) is placed in metallic substrates 212 towards the mode on the surface of metallic substrates 212, (does not expects by adhesive
Show) it is engaged in metallic substrates 212.
Wiring board 230 is a kind of by base material (such as, glass epoxy resin, paper epoxy resin, the pottery with insulating properties
Deng) the lamellar parts that constitute.The wiring board 230 of the present embodiment possesses receives the 9 of 9 LED chips 220 respectively
Individual peristome 231～239.Wiring board 230 possesses the Wiring pattern formed in the way of covering the whole surface of wiring board 230
230a.Wiring pattern 230a is the universal metal figure for supplying electric power to the cathode terminal of each LED chip 220
Case, is connected with the cathode terminal of each LED chip 220 via pair of engaging lead-in wire 225.
Radiator 250 is the parts identical with the radiator 150 of the 1st embodiment possessing multiple fin 250a.
The anode terminal of 9 LED chips 220 of the present embodiment is engaged in metallic substrates 212, cathode terminal
It is engaged in Wiring pattern 230a.Thus, as shown in Figure 8,9 LED chips 120 can be connected in parallel.Thus, if
The LED drive circuit never illustrated supplies electric power to metallic substrates 212 and Wiring pattern 230a, then send out for 9
Optical diode LED chip 220 is luminous, penetrates the ultraviolet light extended along X-direction and Y direction from light irradiation module 200.
Additionally, the light irradiation module 200 of the present embodiment is formed with notch 230b in a part for wiring board 230, gold
The part belonging to substrate 212 is exposed in the side identical with the exit facet 120a of LED chip 120, is formed and connects
Conjunction portion 212a (exposed division).Therefore, the light irradiation module 200 of the present embodiment and the light irradiation module 100 of the present embodiment are identical, also
Multiple smooth irradiation module 200 can be connected in the X-axis direction.
Fig. 9～Figure 10 is the figure representing the structure being linked with 2 light irradiation module 200A, 200B.Fig. 9 is the illumination connected
Penetrating the top view of module 200A, 200B, Figure 10 is light irradiation module 200A, the equivalent circuit diagram of 200B connected.Furthermore, Fig. 9
～in Figure 10, for convenience of explanation, the light irradiation module 200 diacritic " 200A " to left side, the light irradiation module to right side
200 diacritics " 200B ", but the light of the structure of light irradiation module 200A and light irradiation module 200B and above-mentioned the present embodiment
Irradiation module 200 is identical.
As shown in Fig. 9～Figure 10, light irradiation module 200A and light irradiation module 200B are in continuous print mode in the X-axis direction
Compact configuration, is linked by the support member not illustrated and supports.And, link light irradiation module 200A and light irradiation module
During 200B, the Wiring pattern 230a of light irradiation module 200A is close configuration with the junction surface 212a phase of light irradiation module 200B, logical
Crossing and configure joint elements 260 in seam portion, both can be electrically connected with.The joint elements of joint elements the 260 and the 1st embodiment
160 is identical, and its one end is connected with the Wiring pattern 230a of light irradiation module 200A by welding grade, and its other end is by weldering
Connect etc. and to be connected with the metallic substrates 212 of light irradiation module 200B.Thus, as shown in Figure 10, light irradiation module 200A is irradiated with light
Module 200B is electrically connected in series by joint elements 260.Thus, if being connected in series multiple smooth irradiation module 200, high luminescence
Diode (LED) driving voltage is necessary, but power consumption is without rising.
As it has been described above, the light irradiation module 200 of the present embodiment is also identical with the light irradiation device 100 of the 1st embodiment, along
X-direction can connect easily, thereby, it is possible to be readily available the ultraviolet light of expectation line length.Furthermore, though the present embodiment
For a kind of in light irradiation module 200 while arranging the structure of joint elements 260, but also be able to along X-direction and Y
Axial four limits are respectively provided with junction surface 230b, it is possible to connect light irradiation module 200 in the two directions.
3rd embodiment:
Figure 11～Figure 13 is the figure briefly constituted of the light irradiation module 300 involved by the 3rd embodiment of the explanation present invention.
Figure 11 is the top view of light irradiation module 300, and Figure 12 is the B-B profile of Figure 11, and Figure 13 is the equivalent electric of light irradiation module 300
Lu Tu.The metallic substrates 312 of the light irradiation module 300 of the present embodiment along X-direction be divided into 3 metallic substrates 312a,
312b, 312c, this point is different from the light irradiation module 200 of light irradiation module the 100 and the 2nd embodiment of the 1st embodiment.
As shown in Figure 11～Figure 13, the light irradiation module 300 of the present embodiment possesses substrate 310；It is placed in substrate 310 surface
Multiple (in Figure 11 being 12) LED chip 320；To be configured at substrate along LED chip 320
The two panels wiring board 330 on 310 surfaces；With the radiator 350 being arranged in substrate 310 back side.
Substrate 310 is the substrate of the double-layer structure being made up of with insulation division 314 sheet metal substrate 312.The present embodiment
Metallic substrates 312 be divided into 3 metallic substrates 312a, 312b, 312c across insulating element 340.As a example by insulating element 340
Such as aluminium oxide (Al2O3).The metallic substrates 312 of this structure can be passed through the most as shown in figure 14, in the X-axis direction mutual layer
Folded bonding two panels copper coin (parts represented in Figure 14, with " Cu ") two panels aluminum oxide base material is (in Fig. 6, with " Al2O3" portion that represents
Part), the direction parallel with stacked direction (X-direction) carries out cutting into slices obtaining.
Insulation division 314 is the parts identical with the insulation division 114 of the 1st embodiment, to be close to the back side of metallic substrates 312
The state of side, is fixed by bonding etc..
LED chip 320 is the element identical with the LED chip 120 of the 1st embodiment, with
Bottom surface (that is, anode terminal) is placed in metallic substrates 312 towards the mode on the surface of metallic substrates 312, (does not expects by adhesive
Show) it is engaged in metallic substrates 312.Furthermore, as shown in figure 11, the LED chip 320 of the present embodiment passes through insulation division
Part 340 and wiring board 330 respectively two two be arranged in divided 6 rectangular areas.
Wiring board 330 is a kind of by base material (such as, glass epoxy resin, paper epoxy resin, the pottery with insulating properties
Deng) the lamellar parts that constitute.The wiring board 330 of the present embodiment is in fig. 11 by 6 LED chips with upside
320 wiring boards 331 connected and the wiring board 332 being connected with 6 LED chips 320 of downside are constituted.At circuit
The surface of plate 331 is formed by bonding wire 325 and two the LED chips being arranged in metallic substrates 312a
Wiring pattern 331a that the cathode terminal of 320 connects, by bonding wire 325 and two luminescences being arranged in metallic substrates 312b
Wiring pattern 331b that the cathode terminal of diode LED chips 320 connects and by bonding wire 325 be arranged in metal
The Wiring pattern 331c that the cathode terminal of two LED chips 320 of substrate 312c connects.Additionally, at wiring board
The surface of 332 is formed by bonding wire 325 and two the LED chips 320 being arranged in metallic substrates 312a
Cathode terminal connect Wiring pattern 332a, by bonding wire 325 and two luminescences two being arranged in metallic substrates 312b
Wiring pattern 332b that the cathode terminal of pole pipe LED chip 320 connects and by bonding wire 325 be arranged in Metal Substrate
The Wiring pattern 332c that the cathode terminal of two LED chips 320 of end 312c connects.
Additionally, as shown in Figure 11, Figure 12, the light irradiation module 300 of the present embodiment possesses wiring board 331 and with crossover track
Bus 350a, 350b, 350c that the mode of road plate 332 configures.Bus 350a is for being electrically connected with Wiring pattern 331a and wiring diagram
The parts of case 332a.It is electrically connected with by bus 350a, Wiring pattern 331a and Wiring pattern 332a, is therefore arranged in Metal Substrate
The cathode terminal of 4 LED chips 320 on end 312a can be electrically connected with.Bus 350b is that electric connection is joined
Line chart case 331b and the parts of Wiring pattern 332b.Electrically connected with Wiring pattern 332b by bus 350b, Wiring pattern 331b
Connecing, the cathode terminal of 4 the LED chips 320 being therefore arranged in metallic substrates 312b can be electrically connected with.Female
Line 350c is the parts being electrically connected with Wiring pattern 331c and Wiring pattern 332c.By bus 350c, Wiring pattern 331c with
Wiring pattern 332c is electrically connected with, the negative electrode of 4 the LED chips 320 being therefore arranged in metallic substrates 312c
Terminal can be electrically connected with.
Additionally, the bus 350a of the present embodiment is connected to metallic substrates 312b by lead-in wire 360a.Additionally, the present embodiment
Bus 350b is connected to metallic substrates 312c by lead-in wire 360b.
As it has been described above, the 12 of the present embodiment LED chips 320 by 3 metallic substrates 312a, 312b,
312c is divided into 3 groups in the X-axis direction.And, the cathode terminal of 4 LED chips 320 in metallic substrates 312a
Son is connected by Wiring pattern 331a, Wiring pattern 332a and bus 350a, therefore these 4 LED chips 320
It is connected in parallel (Figure 13).Additionally, the cathode terminal of 4 LED chips 320 in metallic substrates 312b passes through distribution
Pattern 331b, Wiring pattern 332b and bus 350b connect, and therefore these 4 LED chips 320 are connected in parallel
(Figure 13).Additionally, the cathode terminal of 4 LED chips 320 in metallic substrates 312c passes through Wiring pattern
331c, Wiring pattern 332c and bus 350c connect, and therefore these 4 LED chips 320 are connected in parallel (figure
13).Additionally, by lead-in wire 360a, bus 350b be connected with metallic substrates 312c, therefore, each metallic substrates 312a, 312b,
4 LED chips of 312c are connected in series as shown in figure 13.
As it has been described above, in the present embodiment, by splitting metallic substrates 312 in the X-axis direction, the luminescence that will be connected in parallel
Diode LED chips 320 is grouped, then is connected in series by each LED chip 320 after packet.As shown in figure 14, gold
The segmentation number belonging to substrate 312 is determined by the lamination sheets number of copper coin and aluminum oxide base material, so, by adjustment layer lamination number, one
The hop count of the LED chip 320 being connected in series can be freely set on plate base 310.That is, according to the present embodiment
Structure, as shown in the light irradiation module 200 of light irradiation module the 100 or the 2nd embodiment of the 1st embodiment, is not connected to multiple illumination
Penetrate module, also can be connected in series LED chip 320.
Furthermore, 12 LED chips 320 in the present embodiment configure in two separate ranks along Y direction, but not
Being defined in such structure, multiple LED chips 320 can also be arranged side-by-side N row (N is the integer of more than 1).
Furthermore, it should that thinks this disclosed embodiment is a little citing, and non-limiting.The scope of the present invention
Not described above, but by shown in claims, it is intended to comprise with in claims equivalents and scope is complete
Portion changes.
Claims (12)
1. a light irradiation module, it possesses: substrate；It is placed in described substrate surface and to the side being orthogonal to described substrate surface
Multiple LED chips to injection ultraviolet light；And compact configuration is in described substrate back, and will be in described luminescence
The heat release produced in diode LED chips is to outside thermal component, it is characterised in that
Described substrate has: the metallic substrates of tabular, and described metallic substrates is placed with the plurality of LED on surface
Chip, and be electrically connected with the 1st electrode being formed at this LED chip back, to the 1st electrode supply electric power；
And insulation division, described insulation division is closely arranged at the rear side of described metallic substrates,
Described metallic substrates is configured with wiring board, described wiring board be formed at each described LED chip list
2nd electrode in face is electrically connected with, and to the 2nd electrode supply electric power；
The thickness of described metallic substrates is 1.0～2.0mm,
The thickness of described insulation division is thinner than the thickness of described metallic substrates.
Smooth irradiation module the most according to claim 1, it is characterised in that
The thickness of described insulation division is 100～600 μm.
Smooth irradiation module the most according to claim 1 and 2, it is characterised in that
The plurality of LED chip is connected in parallel.
4. according to the light irradiation module described in any one claim in claims 1 to 3, it is characterised in that
During vertical view, described substrate is rectangular,
The plurality of LED chip is arranged side-by-side string along the parallel both sides of described substrate.
Smooth irradiation module the most according to claim 4, it is characterised in that
It is configured to can connect multiple smooth irradiation module in the orientation of the plurality of LED chip.
Smooth irradiation module the most according to claim 5, it is characterised in that
Described metallic substrates has the dew of surface exposure at the one end of the orientation of the plurality of LED chip
Go out portion,
When connection has multiple smooth irradiation module, the wiring board of the light irradiation module of adjacent side and other light irradiation module
Exposed division is mutually near configuration, and described wiring board is electrically connected with described exposed division.
7. according to the light irradiation device described in any one claim in claims 1 to 3, it is characterised in that
During vertical view, described substrate is rectangular,
The plurality of LED chip is that two-dimensional-matrix-like is configured at described substrate.
Smooth irradiation module the most according to claim 7, it is characterised in that
Described wiring board is configured to be enclosed in around each described LED chip.
Smooth irradiation module the most according to claim 8, it is characterised in that
Multiple smooth irradiation module can be connected in the orientation of the side being configured to the plurality of LED chip.
Smooth irradiation module the most according to claim 9, it is characterised in that
It is naked that described metallic substrates has surface at the one end of the orientation of the side of the plurality of LED chip
The exposed division of dew,
When connection has multiple smooth irradiation module, the wiring board of the light irradiation module of adjacent side and other light irradiation module
Exposed division is mutually near configuration, and described wiring board is electrically connected with described exposed division.
11. according to the light irradiation module described in any one claim in claims 1 to 3, it is characterised in that
During vertical view, described substrate is rectangular,
The plurality of LED chip configures N row side by side along the parallel both sides of described substrate, N be more than 1 whole
Number,
Described metallic substrates is divided into many on the direction orthogonal with the orientation of the plurality of LED chip
It is individual,
Described wiring board using be placed in each substrate after segmentation each described LED chip as 1 group, often group is electrically
Connect described 2nd electrode,
Wiring board in the metallic substrates of adjacent side is electrically connected with other metallic substrates.
12. according to the light irradiation module described in claim 11, it is characterised in that
Between each metallic substrates after described segmentation, there is insulating element.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015074298A JP2016195177A (en) | 2015-03-31 | 2015-03-31 | Light irradiation module |
| JP2015-074298 | 2015-03-31 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106024803A true CN106024803A (en) | 2016-10-12 |
Family
ID=57081398
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610180618.XA Pending CN106024803A (en) | 2015-03-31 | 2016-03-25 | Light Irradiation Module |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP2016195177A (en) |
| KR (1) | KR20160117260A (en) |
| CN (1) | CN106024803A (en) |
| TW (1) | TW201636535A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114650629A (en) * | 2020-12-18 | 2022-06-21 | 细美事有限公司 | Optical processing member, substrate processing apparatus including the same, and substrate processing method |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102467343B1 (en) * | 2020-09-09 | 2022-11-16 | (주)진영에이치앤에스 | A UVC LED Assembly |
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| JP4432275B2 (en) * | 2000-07-13 | 2010-03-17 | パナソニック電工株式会社 | Light source device |
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| JP5330889B2 (en) * | 2009-04-14 | 2013-10-30 | 電気化学工業株式会社 | LED module for lighting |
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| CN114650629A (en) * | 2020-12-18 | 2022-06-21 | 细美事有限公司 | Optical processing member, substrate processing apparatus including the same, and substrate processing method |
| TWI810744B (en) * | 2020-12-18 | 2023-08-01 | 南韓商細美事有限公司 | Light treating member, substrate treating apparatus including the same and substrate treating method |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201636535A (en) | 2016-10-16 |
| JP2016195177A (en) | 2016-11-17 |
| KR20160117260A (en) | 2016-10-10 |
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