CN106024700B - Improve the method for three dimensional NAND channel filling - Google Patents
Improve the method for three dimensional NAND channel filling Download PDFInfo
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- CN106024700B CN106024700B CN201610515938.6A CN201610515938A CN106024700B CN 106024700 B CN106024700 B CN 106024700B CN 201610515938 A CN201610515938 A CN 201610515938A CN 106024700 B CN106024700 B CN 106024700B
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- Prior art keywords
- dimensional nand
- deep trench
- filling
- film
- ion beam
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- 238000000034 method Methods 0.000 title claims abstract description 27
- 238000010884 ion-beam technique Methods 0.000 claims abstract description 20
- 239000000758 substrate Substances 0.000 claims abstract description 16
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 14
- 238000000151 deposition Methods 0.000 claims abstract description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 29
- 239000000377 silicon dioxide Substances 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 9
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 8
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 4
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical group [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 3
- 229910052786 argon Inorganic materials 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- -1 argon ion Chemical class 0.000 claims description 2
- 238000005468 ion implantation Methods 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 10
- 239000004065 semiconductor Substances 0.000 description 8
- 238000005530 etching Methods 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 4
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 229910052593 corundum Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 229910001845 yogo sapphire Inorganic materials 0.000 description 2
- VXAUWWUXCIMFIM-UHFFFAOYSA-M aluminum;oxygen(2-);hydroxide Chemical compound [OH-].[O-2].[Al+3] VXAUWWUXCIMFIM-UHFFFAOYSA-M 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005429 filling process Methods 0.000 description 1
- 238000005247 gettering Methods 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Element Separation (AREA)
Abstract
The present invention relates to the manufacturing field of three dimensional NAND more particularly to a kind of methods for improving the filling of three dimensional NAND channel.A method of improving the filling of three dimensional NAND channel, which comprises provide a three dimensional NAND substrate with deep trench；Prepare bottom and side wall that an AlO film covers the deep trench；Depositing TiN/W film fills the deep trench；Remove the part TiN/W film；Ion beam bombardment technique is carried out to the deep trench, to form funnel-form groove；It prepares SiO film and is full of the funnel-form groove.
Description
Technical field
The present invention relates to the manufacturing field of three dimensional NAND more particularly to a kind of methods for improving the filling of three dimensional NAND channel.
Background technique
Three dimensional NAND substrate usually there will be two important defects when etching forms deep trench in the prior art,
One is the selection due to aluminum oxide is relatively low, remains on deep trench side wall and do not etch complete aluminum oxide；Its
Second is that almost all of oxide can not all seal ditch road junction since the depth-to-width ratio of the deep trench of three dimensional NAND substrate is very high,
This will affect the storage performance of NAND.
Summary of the invention
In view of the problems of the existing technology, the present invention provides a kind of method of improvement three dimensional NAND channel filling, energy
It is enough to seal the ditch road junction of the deep trench of three dimensional NAND substrate when filling silica, realize that silica is filled out completely
Fill infundibulate groove.
The present invention adopts the following technical scheme:
A method of improving the filling of three dimensional NAND channel, which comprises
The one three dimensional NAND substrate with deep trench is provided；
Prepare bottom and side wall that an AlO film covers the deep trench；
Depositing TiN/W film fills the deep trench；
Remove the part TiN/W film；
Ion beam bombardment technique is carried out to the deep trench, to form funnel-form groove；
It prepares SiO film and is full of the funnel-form groove.
Preferably, the ion of the ion beam is argon ion.
Preferably, the electric current of the ion of the ion beam is 10~50mA, and/or
Energy is 0.5~2.5keV, and/or
Vacuum degree is less than or equal to 6.67 × 10 Pa.
Preferably, the bombardment of the ion beam is carried out using ion injection machine table.
Preferably, the material of the AlO film is aluminum oxide.
Preferably, the material of the TiN/W film is titanium nitride or tungsten.
Preferably, the material of the SiO film is silica.
Preferably, in the method, ion beam bombardment technique is carried out to the deep trench, in the channel of the deep trench
Funnel-form groove is formed at mouthful.
The beneficial effects of the present invention are:
The present invention by using highdensity ion beam bombardment three dimensional NAND deep trench ditch road junction, due to ion beam to Hong
The selectivity for hitting object is not high, can preferably remove aluminum oxide and silica at zanjon road junction, increases zanjon road junction
Opening, such as form the opening of an inverted triangle funnel shaped, it is convenient can be compared in the filling process of subsequent silica
Good seals zanjon road junction.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of three dimensional NAND substrate of the present invention；
Fig. 2 is the shape appearance figure of deep trench after etching in the prior art；
Fig. 3 is the schematic diagram that NAND channel fills aluminium dioxide in the prior art；
Fig. 4 be plasma bombardment deep trench of the present invention ditch road junction after NAND channel shape appearance figure.
Specific embodiment
The present invention is further illustrated with specific embodiment with reference to the accompanying drawing, but not as limit of the invention
It is fixed.
The present invention provides a kind of method of improvement three dimensional NAND channel filling, this method aims to solve the problem that three dimensional NAND substrate
In deep trench filling problem, carry out deep trench filling before firstly the need of offer one have deep trench three dimensional NAND serve as a contrast
Bottom uses high density ion bombardment to the sealing part of deep trench, to improve zanjon later after sequence of deposition, etching technics
The problem of road is filled up completely.
Embodiment one
The present embodiment is intended to illustrate the structure of three dimensional NAND substrate, as shown in Figure 1, the three dimensional NAND substrate includes a substrate
100, source configuration and drain electrode structure are formed on substrate 100, wherein source configuration and drain electrode structure are by removing TiN/W
What film 101 separated, the part of removal forms the deep trench of three dimensional NAND substrate, i.e. deep trench 102, source configuration and leakage
Pole structure is connected to by semiconductor channel 103 with tunnel dielectric layer 104, and semiconductor channel 103 is U-shaped channel, needs to illustrate
Be it is U-shaped can be English alphabet " U " shape.Tunnel dielectric layer 104 is formed on the side wall of semiconductor channel 103.
Also prepare an electrode 105 respectively on the semiconductor channel of source electrode and drain electrode, in source configuration and drain electrode structure,
On substrate 100, it is sequentially depositing TiN/W film 101 and semiconductor layer 106 from the bottom to top, prepares silicon oxide layer 107 in topmost one
On the semiconductor layer 106 of layer, the material of silicon oxide layer 107 can be silica, and the material of TiN/W film 101 can be tungsten
Or titanium nitride.
In the present embodiment, the surface of semiconductor layer 106 is covered by an AlO film 108, neighbouring two semiconductor layers
AlO film 108 between 106 is also to be connected by AlO film 108.AlO film also covers the surface of silicon oxide layer 107.This
The material of AlO film in embodiment can be aluminum oxide.
Embodiment two
Based on the three dimensional NAND substrate with deep trench proposed in embodiment one, how the present embodiment improves if being stressed
Deep trench is filled, i.e., the SiO film of filling can be sealed to the ditch road junction of deep trench completely.
As shown in Fig. 2, Fig. 2 is the shape appearance figure at ditch road junction after the TiN/W film 101 for etching deep trench in the prior art,
As can be seen that not only having AlO film 108(at ditch road junction can be aluminum oxide Al in Fig. 22O3) blocking so that subsequent SiO
Film is not easy completely to fill ditch road junction, at the same be also hung on the side wall of deep trench 102 remaining TiN/W film 101 not by
Completely, silicon oxide layer 107 forms one at the ditch road junction of deep trench 102 in the etching process of TiN/W film 101 to etching
Shallow ridges, this all makes the filling of subsequent SiO film 109 that can not seal the ditch road junction of deep trench 102, the effect that SiO film 109 is filled
Fruit figure is as shown in Figure 3.
The present embodiment is not easy during depositing SiO film 109 by SiO in view of the deep trench 102 of high-aspect-ratio
Film 109 is covered, and the stability and production yield rate of device are influenced, as shown in figure 3, being injected by ion injection machine table highly dense
The plasma of degree bombards the ditch road junction of deep trench 102, in this way can be by AlO film 108 to form funnel-form groove
It is whittled into the shape of inverted triangle, i.e. funnel-form groove, with silicon oxide layer 107 convenient for the filling of subsequent SiO film 109.
In the present embodiment, metal oxide Al2O3It is more sensitive to ion beam damage, likewise, silica and SiO2=Si
Dangling bonds are even more so, can destroy SiO by injecting Ar+ ion beam2In=Si dangling bonds and gettering metal oxide
Metal ion, therefore the ion beam injected can not only remove the Al hung on deep trench side wall2O3, it is often more important that, high-energy
Ion beam forms a biggish funnel-form groove in channel mouth, eliminates Al2O3Blocking so that silica is better
Fill the deep trench of three dimensional NAND substrate.
Further, the electric current of ion beam argon Ar+ be 10~50mA, energy be 0.5~2.5keV, vacuum degree≤
6.67×10 Pa。
In conclusion ditch road junction of the present invention by using highdensity ion beam bombardment three dimensional NAND deep trench, due to
Ion beam is not high to the selectivity of bombardment object, can preferably remove aluminum oxide and silica at zanjon road junction, increases
The opening at big zanjon road junction, such as the groove of an inverted triangle funnel shaped is formed, the convenient filling in subsequent silica
Preferably zanjon road junction can be sealed in journey.
It should be appreciated by those skilled in the art that those skilled in the art are combining the prior art and above-described embodiment can be with
Realize the change case, this will not be repeated here.Such change case does not affect the essence of the present invention, not superfluous herein
It states.
Presently preferred embodiments of the present invention is described above.It is to be appreciated that the invention is not limited to above-mentioned
Particular implementation, devices and structures not described in detail herein should be understood as gives reality with the common mode in this field
It applies；Anyone skilled in the art, without departing from the scope of the technical proposal of the invention, all using the disclosure above
Methods and technical content many possible changes and modifications are made to technical solution of the present invention, or be revised as equivalent variations etc.
Embodiment is imitated, this is not affected the essence of the present invention.Therefore, anything that does not depart from the technical scheme of the invention, foundation
Technical spirit of the invention any simple modifications, equivalents, and modifications made to the above embodiment, still fall within the present invention
In the range of technical solution protection.
Claims (7)
1. a kind of method for improving the filling of three dimensional NAND channel, which is characterized in that the described method includes:
The one three dimensional NAND substrate with deep trench is provided；
Prepare bottom and side wall that an AlO film covers the deep trench；
Depositing TiN/W film fills the deep trench；
Remove the part TiN/W film；
Ion beam bombardment technique is carried out to the deep trench, to form funnel-form groove；
It prepares SiO film and is full of the funnel-form groove；
Wherein, the material of the TiN/W film is titanium nitride or tungsten.
2. it is according to claim 1 improve three dimensional NAND channel filling method, which is characterized in that the ion beam from
Son is argon ion.
3. it is according to claim 1 improve three dimensional NAND channel filling method, which is characterized in that the ion beam from
The electric current of son is 10~50mA, and/or
Energy is 0.5~2.5keV, and/or
Vacuum degree is less than or equal to 6.67 × 10Pa.
4. the method according to claim 1 for improving the filling of three dimensional NAND channel, which is characterized in that use ion implantation apparatus
Platform carries out the bombardment of the ion beam.
5. the method according to claim 1 for improving the filling of three dimensional NAND channel, which is characterized in that the AlO film
Material is aluminum oxide.
6. the method according to claim 1 for improving the filling of three dimensional NAND channel, which is characterized in that the SiO film
Material is silica.
7. the method according to claim 1 for improving the filling of three dimensional NAND channel, which is characterized in that right in the method
The deep trench carries out ion beam bombardment technique, to form funnel-form groove at the ditch road junction of the deep trench.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610515938.6A CN106024700B (en) | 2016-07-04 | 2016-07-04 | Improve the method for three dimensional NAND channel filling |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610515938.6A CN106024700B (en) | 2016-07-04 | 2016-07-04 | Improve the method for three dimensional NAND channel filling |
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| Publication Number | Publication Date |
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| CN106024700A CN106024700A (en) | 2016-10-12 |
| CN106024700B true CN106024700B (en) | 2019-04-30 |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105529332A (en) * | 2016-01-12 | 2016-04-27 | 清华大学 | Decoded vertical grid 3D NAND and forming method thereof |
| CN105575909A (en) * | 2016-02-15 | 2016-05-11 | 上海格易电子有限公司 | 3D NAND flash memory and manufacturing method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9496274B2 (en) * | 2013-09-17 | 2016-11-15 | Sandisk Technologies Llc | Three-dimensional non-volatile memory device |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105529332A (en) * | 2016-01-12 | 2016-04-27 | 清华大学 | Decoded vertical grid 3D NAND and forming method thereof |
| CN105575909A (en) * | 2016-02-15 | 2016-05-11 | 上海格易电子有限公司 | 3D NAND flash memory and manufacturing method thereof |
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Effective date of registration: 20240319 Address after: No. 88, Weilai Third Road, Donghu New Technology Development Zone, Wuhan City, Hubei Province, 430000 Patentee after: YANGTZE MEMORY TECHNOLOGIES Co.,Ltd. Country or region after: Zhong Guo Address before: 430205 No.18, Gaoxin 4th Road, Donghu Development Zone, Wuhan City, Hubei Province Patentee before: Wuhan Xinxin Semiconductor Manufacturing Co.,Ltd. Country or region before: Zhong Guo |