CN106012032A - Method for preparing light trapping structure on surface of solar battery - Google Patents
Method for preparing light trapping structure on surface of solar battery Download PDFInfo
- Publication number
- CN106012032A CN106012032A CN201610620079.7A CN201610620079A CN106012032A CN 106012032 A CN106012032 A CN 106012032A CN 201610620079 A CN201610620079 A CN 201610620079A CN 106012032 A CN106012032 A CN 106012032A
- Authority
- CN
- China
- Prior art keywords
- light trapping
- trapping structure
- solar battery
- silicon chip
- corrosion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/08—Etching
- C30B33/10—Etching in solutions or melts
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Photovoltaic Devices (AREA)
- Weting (AREA)
Abstract
The invention relates to a method for preparing a light trapping structure on the surface of a solar battery. The method comprises the following steps: adding an additive in the process that a silicon sheet is subjected to acid corrosion with a mixed acid solution, so as to prepare a corrosive liquid, and herbing the silicon sheets with the corrosive liquid by using herbing equipment, thereby forming the special light trapping structure on the surface of the silicon sheet, wherein the corrosive liquid is prepared from the following components in percentage by mass: 20-80wt% of the mixed acid solution, 0.01-1% of the additive, and the balance of water. By adopting the method provided by the invention, due to adoption of the additive, a special surface morphology can be formed, specifically, relatively small micro structures can be further formed on the basis of acid corrosion, then the reflection rate of a crystal silicon battery can be effectively reduced, and the battery efficiency can be improved; due to addition of the additive, the requirements of an acid herbing process on equipment can be greatly reduced, and the temperature window can be increased to 5-20 DEG C. Same effects can be achieved no matter whether a simple slot type herbing mode or a high-class chain type herbing mode is adopted.
Description
Technical field
The present invention relates to the preparation method of a kind of solar battery surface light trapping structure, belong to technical field of solar batteries.
Background technology
Process for etching is the first step of whole solar cell preparation process, and its Main Function has two: 1) erosion removal one
Determine the silicon of thickness, its objective is to remove the damage layer in silicon chip cutting process；2) setting is formed at solar battery surface
The texture of looks, its objective is to be formed certain sunken light effect, and the light improving solar cell absorbs, and then improves battery efficiency
The preparation method difference of different types of its surface texture of solar cell, common single crystal silicon solar cell has excellent
Crystal condition, can 1～2% aqueous slkali in by the pyramid pattern of anisotropy formation rule, these rules
Pyramid can effectively act as falling into the effect of light.For polycrystalline solar cell, owing to its surface is by a large amount of not isomorphous
To crystal grain composition, it is impossible to as monocrystal silicon, carry out anisotropic etch by alkali.To polycrystalline silicon solar cell surface
The preparation of texture mainly has acid corrosion method and plasma etching method, or is knitted by the surface of more complicated technique formation rule
Structure such as photoetching process, laser ablation method etc..Wherein acid corrosion method is better than that it is easy, and efficiently, the advantage such as low cost is by industrial quarters
Accept extensively.
The processed with acid floss system that present stage is used is mainly HF/HNO3/H2O system, wherein HNO3As oxidant with
Pasc reaction forms the SiO of densification at silicon face2Layer, the SiO that the HF in solution is formed with previous step2Reaction, generation can
To be dissolved in the hexafluorosilicic acid complex of water.Pass through HNO3Oxidation and HF to silicon are to SiO2Ablation so that silicon
Surface is by continuous erosion removal.Concrete reaction equation is as follows:
3Si+4HNO3=3SiO2+2H2O+4NO
SiO2+ 6HF=H2(SiF6)+2H2O
During concrete one-tenth produces, technologist finds along with HF/HNO3/H2The silicon chip that the difference of O ratio is corroded
Surface topography is the most different.In the system of rich HF, the silicon chip surface being corroded out is more uniform, crystal face each to
Opposite sex performance is inconspicuous, and reflectance rate is relatively low, but due to the raising of HF, the weight caused due to defect in polycrystal
Corrosion region is seriously amplified, and produces very many heavy corrosion districts, and on the one hand these heavy corrosion districts can affect follow-up technique,
On the other hand the performance of battery can also be had a strong impact on, it should avoid as far as possible.In the richest HF system, its heat of reaction is very
Greatly, reaction is difficult to control.At rich HNO3System in, although do not have the heavy corrosion district in rich HF system, but
Being that the silicon chip surface individual character opposite sex being corroded out is relatively big, different interplanars differ greatly and form flower sheet, on the one hand easily draw
Play the bad order of battery, on the other hand due to the higher electrical property that also can affect solar cell of reflectance.Due to above special
Property, the technology controlling and process of acid corrosion method making herbs into wool just seems extremely important, present stage during large-scale production, technique people
Member is main by constantly observing matte situation, adjusts HF, HNO in time3Additional amount control course of reaction.This mistake
Journey exists certain empirical, and wastes time and energy.
Simultaneously as acid corrosion technique is a highly exothermic fast reaction process, the requirement to equipment is the highest, one
As slot-type device be difficult to obtain stable production process, and the high chain equipment of cost must be used.
In sum, a kind of making herbs into wool supplement being suitable for processed with acid floss is found so that it is technologist can be helped preferably to control
System reaction, can reduce the acid corrosion requirement to equipment simultaneously, reduces production cost, is urgent problem.
Summary of the invention
Present invention is primarily based on relevant issues set forth above, by careful research HF/HN0.The corrosion process of system, in detail
Carefully understand reaction mechanism, by constantly research and development and on-the-spot test, eventually find a kind of processed with acid floss being suitable for existing technique
Additive, to prepare special solar battery surface light trapping structure.
To achieve these goals, technical scheme is as follows.
The preparation method of a kind of solar battery surface light trapping structure, carries out acid corrosion process utilizing mixed acid solution for silicon chip
A kind of additive of middle interpolation, to be prepared as corrosive liquid, utilizes this corrosive liquid to utilize etching device for silicon wafer wool making so that
Silicon chip surface produce a kind of special light trapping structure, the constituent of corrosive liquid is: mixed acid solution quality accounting be 20～
80wt%, additive quality accounting is 0.01～1%, excess water.
Further, above-mentioned special light trapping structure is to produce a large amount of minimal corrosion inside the common big etch pit of vermiform
Hole, can effectively reduce solar cell silicon wafer surface reflectivity, improves battery efficiency, and wherein, silicon chip surface luminance factor is general
Logical silicon chip reduces by 2～5%；Formed big etch pit a size of: length 2～10um, width 1～5um, the degree of depth 0.5～
2um；The minimal corrosion formed is cheated a size of: length 100～500nm, width 100～500nm, the degree of depth 0.2～0.5um.
Further, additive is the mixture of glycerol, citric acid, polyethenoxy ether class and water, wherein, and glycerol and water
Volume ratio be 1～10: 100, the weight ratio of citric acid and water is 1～3: 100, the volume ratio of polyoxyethylene ether and water
It is 0.1～1: 100.
Further, mixed acid solution be the mass mixing ratio of the mixture of HF and oxidant, HF and oxidant be 1～100:
100, wherein, oxidant is nitric acid, hydrogen peroxide, potassium permanganate or chromic acid.
Further, above-mentioned etching device is chain equipment or slot-type device.
Further, above-mentioned silicon chip is monocrystalline silicon piece or polysilicon chip.
Further, the solution temperature during acid corrosion is 5～20 DEG C.
Further, the response time of acid corrosion process is 2～4min, after acid corrosion, is floated through water by the silicon chip after corrosion
Immerse after washing 2min in the aqueous slkali of 5% and react 10～60 seconds, take out, rinsing, dry up.
By above method, the solar battery suede of a kind of special construction can be prepared, compared with common acids making herbs into wool structure
This structure can reduce silicon chip surface reflectance 2～5%, and the matte of formation is uniform up and down, in the same size, with solar cell
Subsequent technique coupling is good.
This beneficial effect of the invention is: in the inventive method, by introducing additive, can form a kind of special table
Face pattern, is specially and forms some less micro structures again on the basis of original acid corrosion is agree, can be effectively reduced crystalline substance
The reflectance of body silion cell, improves battery efficiency；By using this additive, acid process for etching can be substantially reduced to setting
Standby requirement degree, temperature window can be promoted to 5～20 degree.The most easy groove type etching or senior chain type texturing are equal
Same effect can be obtained；The complete environmental protection of additive of the present invention, nontoxic, non-corrosiveness, it is highly soluble in water.
Accompanying drawing explanation
Fig. 1 is conventional additives making herbs into wool silicon chip surface micro structure schematic diagram.
Fig. 2 is making herbs into wool silicon chip surface micro structure schematic diagram after use present invention process.
Fig. 3 is making herbs into wool silicon chip surface stereoscan photograph (amplifying 1000 times) after the use embodiment of the present invention 1 technique.
Fig. 4 is making herbs into wool silicon chip surface stereoscan photograph (amplifying 2000 times) after the use embodiment of the present invention 1 technique.
Detailed description of the invention
The preparation method of solar battery surface light trapping structure in the present invention, carries out acid corrosion utilizing mixed acid solution for silicon chip
During add a kind of additive, to be prepared as corrosive liquid, utilize this corrosive liquid utilize etching device for silicon wafer wool making,
Making silicon chip surface produce a kind of special light trapping structure, the constituent of corrosive liquid is: mixed acid solution quality accounting is
20～80wt%, additive quality accounting is 0.01～1%, excess water.
Above-mentioned special light trapping structure is to produce a large amount of minimal corrosion hole inside the common big etch pit of vermiform, can effectively drop
Low solar cell silicon wafer surface reflectivity, improve battery efficiency, wherein, the common silicon chip of silicon chip surface luminance factor reduce by 2～
5%；Formed big etch pit a size of: length 2～10um, width 1～5um, the degree of depth 0.5～2um；Formed is micro-
Little etch pit is a size of: length 100～500nm, width 100～500nm, the degree of depth 0.2～0.5um.
Additive is the mixture of glycerol, citric acid, polyethenoxy ether class and water, and wherein, glycerol with the volume ratio of water is
1～10: 100, citric acid is 1～3: 100 with the weight ratio of water, and polyoxyethylene ether is 0.1～1 with the volume ratio of water:
100。
Mixed acid solution be the mass mixing ratio of the mixture of HF and oxidant, HF and oxidant be 1～100: 100, its
In, oxidant is nitric acid, hydrogen peroxide, potassium permanganate or chromic acid.
Above-mentioned etching device is chain equipment or slot-type device.
Above-mentioned silicon chip is monocrystalline silicon piece or polysilicon chip.
Solution temperature during acid corrosion is 5～20 DEG C.
The response time of acid corrosion process is 2～4min, after acid corrosion, is soaked by the silicon chip after corrosion after water rinsing 2min
Enter in the aqueous slkali of 5% and react 10～60 seconds, take out, rinsing, dry up.
Fig. 1 is conventional additives making herbs into wool silicon chip surface micro structure schematic diagram.Fig. 2 is making herbs into wool silicon chip after use present invention process
Surface micro-structure schematic diagram.Use present invention process method, the solar battery suede of a kind of special construction can be prepared,
This structure can reduce silicon chip surface reflectance 2～5% compared with common acids making herbs into wool structure, and the matte of formation is uniform up and down,
In the same size, mate well with solar cell subsequent technique.
With embodiment, the detailed description of the invention of the present invention is described below in conjunction with the accompanying drawings, in order to be better understood from the present invention.
Embodiment 1
The preparation method of solar battery surface light trapping structure in the embodiment of the present invention, is carried out for silicon chip utilizing mixed acid solution
Add a kind of additive during acid corrosion, to be prepared as corrosive liquid, utilize this corrosive liquid to utilize etching device for silicon chip
Making herbs into wool so that silicon chip surface produces a kind of special light trapping structure, and the constituent of corrosive liquid is: mixed acid solution quality accounts for
Ratio is 20wt%, and additive quality accounting is 0.01%, excess water.
Above-mentioned special light trapping structure is to produce a large amount of minimal corrosion hole inside the common big etch pit of vermiform, can effectively drop
Low solar cell silicon wafer surface reflectivity, improve battery efficiency, wherein, the common silicon chip of silicon chip surface luminance factor reduce by 2～
5%；Formed big etch pit a size of: length 2～10um, width 1～5um, the degree of depth 0.5～2um；Formed is micro-
Little etch pit is a size of: length 100～500nm, width 100～500nm, the degree of depth 0.2～0.5um.
Additive is the mixture of glycerol, citric acid, polyethenoxy ether class and water, and wherein, glycerol with the volume ratio of water is
1～10, citric acid is 1～3 with the weight ratio of water, and polyoxyethylene ether is 0.1: 100 with the volume ratio of water.
Mixed acid solution be the mass mixing ratio of the mixture of HF and oxidant, HF and oxidant be 1: 100, wherein,
Oxidant is nitric acid.
Above-mentioned etching device is chain equipment.
Above-mentioned silicon chip is monocrystalline silicon piece.
Solution temperature during acid corrosion is 5 DEG C.
The response time of acid corrosion process is 2min, after acid corrosion, is immersed by the silicon chip after corrosion after water rinsing 2min
The aqueous slkali of 5% reacts 10 seconds, takes out, rinsing, dry up.
Fig. 3 is making herbs into wool silicon chip surface stereoscan photograph (amplifying 1000 times) after the use embodiment of the present invention 1 technique.From
It can be seen that the surface texture structure size formed is uniform in figure, big etch pit a size of, length 2～10um, width 1～
5um, the degree of depth 0.5～2um.Fig. 4 (is put for making herbs into wool silicon chip surface stereoscan photograph after using the embodiment of the present invention 1 technique
Big 2000 times), it can be seen that some little etch pits are formed, little etch pit: length 100～500nm, width 100～500nm,
The degree of depth 0.2～0.5um.
Embodiment 2
The preparation method of solar battery surface light trapping structure in the embodiment of the present invention, is carried out for silicon chip utilizing mixed acid solution
Add a kind of additive during acid corrosion, to be prepared as corrosive liquid, utilize this corrosive liquid to utilize etching device for silicon chip
Making herbs into wool so that silicon chip surface produces a kind of special light trapping structure, and the constituent of corrosive liquid is: mixed acid solution quality accounts for
Ratio is 80wt%, and additive quality accounting is 1%, excess water.
Above-mentioned special light trapping structure is to produce a large amount of minimal corrosion hole inside the common big etch pit of vermiform, can effectively drop
Low solar cell silicon wafer surface reflectivity, improve battery efficiency, wherein, the common silicon chip of silicon chip surface luminance factor reduce by 2～
5%；Formed big etch pit a size of: length 2～10um, width 1～5um, the degree of depth 0.5～2um；Formed is micro-
Little etch pit is a size of: length 100～500nm, width 100～500nm, the degree of depth 0.2～0.5um.
Additive is the mixture of glycerol, citric acid, polyethenoxy ether class and water, and wherein, glycerol with the volume ratio of water is
10:100, citric acid is 3:100 with the weight ratio of water, and polyoxyethylene ether is 1: 100 with the volume ratio of water.
Mixed acid solution be the mass mixing ratio of the mixture of HF and oxidant, HF and oxidant be 100: 100, wherein,
Oxidant is potassium permanganate.
Above-mentioned etching device is slot-type device.
Above-mentioned silicon chip is polysilicon chip.
Solution temperature during acid corrosion is 20 DEG C.
The response time of acid corrosion process is 4min, after acid corrosion, is immersed by the silicon chip after corrosion after water rinsing 2min
The aqueous slkali of 5% reacts 60 seconds, takes out, rinsing, dry up.
The above is the preferred embodiment of the present invention, it is noted that come for those skilled in the art
Saying, under the premise without departing from the principles of the invention, it is also possible to make some improvements and modifications, these improvements and modifications also regard
For protection scope of the present invention.
Claims (8)
1. the preparation method of a solar battery surface light trapping structure, it is characterized in that: during utilizing mixed acid solution to carry out acid corrosion for silicon chip, add a kind of additive, to be prepared as corrosive liquid, this corrosive liquid is utilized to utilize etching device for silicon wafer wool making, silicon chip surface is made to produce a kind of special light trapping structure, the constituent of corrosive liquid is: mixed acid solution quality accounting is 20～80wt%, and additive quality accounting is 0.01～1%, excess water.
The preparation method of solar battery surface light trapping structure the most according to claim 1, it is characterized in that: above-mentioned special light trapping structure is to produce a large amount of minimal corrosion hole inside the common big etch pit of vermiform, can effectively reduce solar cell silicon wafer surface reflectivity, improve battery efficiency, wherein, the common silicon chip of silicon chip surface luminance factor reduces by 2～5%；Formed big etch pit a size of: length 2～10um, width 1～5um, the degree of depth 0.5～2um；The minimal corrosion formed is cheated a size of: length 100～500nm, width 100～500nm, the degree of depth 0.2～0.5um.
The preparation method of solar battery surface light trapping structure the most according to claim 1, it is characterized in that: described additive is the mixture of glycerol, citric acid, polyethenoxy ether class and water, wherein, glycerol is 1～10:100 with the volume ratio of water, citric acid is 1～3:100 with the weight ratio of water, and polyoxyethylene ether is 0.1～1:100 with the volume ratio of water.
The preparation method of solar battery surface light trapping structure the most according to claim 1, it is characterized in that: described mixed acid solution is the mixture of HF and oxidant, the mass mixing ratio of HF and oxidant is 1～100:100, and wherein, oxidant is nitric acid, hydrogen peroxide, potassium permanganate or chromic acid.
The preparation method of solar battery surface light trapping structure the most according to claim 1, it is characterised in that: above-mentioned etching device is chain equipment or slot-type device.
The preparation method of solar battery surface light trapping structure the most according to claim 1, it is characterised in that: above-mentioned silicon chip is monocrystalline silicon piece or polysilicon chip.
The preparation method of solar battery surface light trapping structure the most according to claim 1, it is characterised in that: the solution temperature during described acid corrosion is 5～20 DEG C.
The preparation method of solar battery surface light trapping structure the most according to claim 1, it is characterised in that: the response time of described acid corrosion process is 2～4min, after acid corrosion, silicon chip after corrosion is immersed after water rinsing 2min in the aqueous slkali of 5% and react 10～60 seconds, take out, rinsing, dry up.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610620079.7A CN106012032A (en) | 2016-07-31 | 2016-07-31 | Method for preparing light trapping structure on surface of solar battery |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610620079.7A CN106012032A (en) | 2016-07-31 | 2016-07-31 | Method for preparing light trapping structure on surface of solar battery |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106012032A true CN106012032A (en) | 2016-10-12 |
Family
ID=57134389
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610620079.7A Pending CN106012032A (en) | 2016-07-31 | 2016-07-31 | Method for preparing light trapping structure on surface of solar battery |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106012032A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117038799A (en) * | 2023-10-07 | 2023-11-10 | 正泰新能科技有限公司 | BC battery preparation method and BC battery |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102299207A (en) * | 2011-08-30 | 2011-12-28 | 华北电力大学 | Method for manufacturing porous pyramid-type silicon surface light trapping structure for solar cell |
| CN102978710A (en) * | 2012-08-13 | 2013-03-20 | 杭州道乐太阳能技术有限公司 | Silicon solar cell surface light trapping structure and preparation method thereof |
| CN105428432A (en) * | 2015-11-06 | 2016-03-23 | 上海师范大学 | Preparation method for porous light-trapping structure on surface of silicon solar cell |
-
2016
- 2016-07-31 CN CN201610620079.7A patent/CN106012032A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102299207A (en) * | 2011-08-30 | 2011-12-28 | 华北电力大学 | Method for manufacturing porous pyramid-type silicon surface light trapping structure for solar cell |
| CN102978710A (en) * | 2012-08-13 | 2013-03-20 | 杭州道乐太阳能技术有限公司 | Silicon solar cell surface light trapping structure and preparation method thereof |
| CN105428432A (en) * | 2015-11-06 | 2016-03-23 | 上海师范大学 | Preparation method for porous light-trapping structure on surface of silicon solar cell |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117038799A (en) * | 2023-10-07 | 2023-11-10 | 正泰新能科技有限公司 | BC battery preparation method and BC battery |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| AU780184B2 (en) | Method for raw etching silicon solar cells | |
| CN104576830B (en) | Texturing pretreatment liquid and texturing pretreatment method for diamond wire cutting polycrystalline silicon sheet, texturing pretreatment silicon sheet and application of texturing pretreatment silicon sheet | |
| CN102703989B (en) | Class monocrystalline solar cells leather producing process | |
| CN102978710A (en) | Silicon solar cell surface light trapping structure and preparation method thereof | |
| CN107338480A (en) | A kind of monocrystalline silicon silicon wafer fine hair making method and its flocking additive | |
| CN104505437B (en) | A kind of diamond wire cutting making herbs into wool pretreatment fluid of polysilicon chip, making herbs into wool preprocess method and making herbs into wool pretreatment silicon chip and application thereof | |
| CN105154982A (en) | Polycrystalline black silicon texturization treatment fluid, polysilicon chip texturization method applying treatment fluid, and polycrystalline black silicon texturization product | |
| CN102181935B (en) | Method and corrosive liquid for making texture surface of monocrystalline silicon | |
| CN110042474A (en) | A kind of monocrystaline silicon solar cell flocking additive and its application | |
| CN105006496B (en) | Single nanometer pile face preparation method of crystalline silicon solar cell | |
| CN103403875A (en) | Method for the wet-chemical etching back of a solar cell emitter | |
| CN103614778A (en) | Alcohol-free alkaline texturing solution for mono-crystalline silicon wafer, texturing method for mono-crystalline silicon wafer, solar cell and manufacturing method for solar cell | |
| CN104362221B (en) | A kind of preparation method of the polycrystalline silicon solar cell of RIE making herbs into wool | |
| CN1983645A (en) | Production of polycrystalline silicon solar battery suede | |
| CN101586239A (en) | Additive for preparing polysilicon etching chemical suede | |
| CN110416359A (en) | A kind of preparation method of TOPCon structure battery | |
| CN106024988A (en) | One-step wet black silicon preparation and surface treatment method | |
| CN110922970A (en) | PERC battery back polishing additive and technology | |
| CN106098840A (en) | A kind of black silicon preparation method of wet method | |
| CN104505425B (en) | Method for preparing solar monocrystal back polished cell piece | |
| CN101818348A (en) | Method for preparing texture of monocrystalline-silicon solar cell by one-step process | |
| CN105304734A (en) | Polycrystalline silicon wafer texturing auxiliary and application method thereof | |
| CN105951184A (en) | Texturing method of diamond wire-cut polycrystalline silicon wafer | |
| CN107623056A (en) | The nanometer suede surface defect repair method that a kind of reactive ion etching method is formed | |
| CN104966762A (en) | Preparation method of texturized surface structure of crystalline silicon solar cell |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20161012 |
|
| RJ01 | Rejection of invention patent application after publication |