CN106011783A - 一种高迁移率层状硒氧化铋半导体薄膜及其制备方法 - Google Patents
一种高迁移率层状硒氧化铋半导体薄膜及其制备方法 Download PDFInfo
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- 239000000758 substrate Substances 0.000 claims abstract description 14
- WMWLMWRWZQELOS-UHFFFAOYSA-N bismuth(iii) oxide Chemical compound O=[Bi]O[Bi]=O WMWLMWRWZQELOS-UHFFFAOYSA-N 0.000 claims abstract description 9
- 239000000843 powder Substances 0.000 claims abstract description 8
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 6
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- 238000000151 deposition Methods 0.000 claims description 15
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- 238000001228 spectrum Methods 0.000 description 2
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- 229910000416 bismuth oxide Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 1
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- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 description 1
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Abstract
本发明公开了一种高迁移率层状Bi2O2Se半导体薄膜及其制备方法。该制备层状Bi2O2Se半导体薄膜的方法，包括如下步骤：以Bi2O3粉末和Bi2Se3块体为原料，在云母基底上进行化学气相沉积，沉积完毕后即得到所述层状Bi2O2Se半导体薄膜。该方法经济、简单易行、所得薄膜大面积连续迁移率高，具有广阔应用前景。
Description
技术领域
本发明属于半导体材料领域，具体涉及一种高迁移率层状硒氧化铋半导体薄膜的制备方法。
背景技术
二维层状材料因其独特的二维结构和优异的光学、电学及光电性质而受到人们的广泛关注。硒氧化铋(Bi2O2Se)是一种传统的热电材料，属于四方晶系 Z＝2)，由(Bi2O2)n层和Sen交替连接构成而具有二维层状晶体结构。C.Drasar等对Bi2O2Se单晶块材的电学输运研究表明，其具有较高迁移率，室温霍尔迁移率可高于300cm2V-1s-1。同时，相关的理论计算表明，Bi2O2Se具有较大的体带隙(～0.7-1.2eV)。因此，Bi2O2Se是一种潜在的高迁移率的半导体层状材料，可能应用于高性能逻辑器件、光电等领域，并可能制备全新的二维柔性电子器件和光电器件。大面积连续高质量的单晶薄膜材料的可控合成是应用实现的关键和难点。然而，迄今为止，Bi2O2Se材料主要是通过溶液法或高温气质输运方法得到的，且所得产物为纳米晶或者块体，其晶体质量较差，难以满足电子和光电子领域的需求。大面积连续高质量的Bi2O2Se单晶薄膜的合成尚未见报道。
发明内容
本发明的目的是提供一种高迁移率层状Bi2O2Se半导体薄膜及其制备方法。
本发明提供的制备层状Bi2O2Se半导体薄膜的方法，包括如下步骤：
以Bi2O3粉末和Bi2Se3块体为原料，进行化学气相沉积，沉积完毕后得到所述层状Bi2O2Se半导体薄膜。
上述方法中，所述Bi2O3粉末与Bi2Se3块体的摩尔比为1～3：1，具体可为1：1、2:1或3:1。
所述化学气相沉积在基底上进行；
所述基底具体为云母，化学式为KMg3(AlSi3010)F2。
所述化学气相沉积步骤中，载气为氩气。
体系压强为50-400托，具体可为50、200或400托。
沉积温度为580-680℃，具体可为580℃、630℃或680℃。
沉积时间为5-60分钟，具体可为5、30或60分钟。
所述化学气相沉积具体可为在管式炉中进行。
更具体的，所述原料位于所述管式炉的中心位置。
所述基底位于所述管式炉中心位置的下游。具体为距所述中心位置10-14厘米的下游位置。
所述方法还包括如下步骤：在所述化学气相沉积步骤之后，将体系自然降温至室温。
图1是本发明生长Bi2O2Se薄膜方法的示意图。
另外，按照上述方法制备得到的层状Bi2O2Se半导体薄膜及该层状Bi2O2Se半导体薄膜在制备红外光电探测器或场效应晶体管中的应用，也属于本发明的保护范围。
所述层状Bi2O2Se半导体薄膜的300K下的霍尔迁移率具体可为313cm2V-1s-1，低温2K下的霍尔迁移率具体可为20660cm2V-1s-1。
本发明介绍一种化学气相沉积合成高迁移率层状Bi2O2Se半导体薄膜的制备方法。该方法经济、简单易行、所得薄膜大面积连续迁移率高，具有广阔应用前景。
附图说明
图1是本发明生长Bi2O2Se薄膜方法的示意图；
图2为本发明介绍的层状硒氧化铋的晶体结构图；
图3是本发明实施例1中所得Bi2O2Se薄膜的光学显微镜照片；
图4是本发明实施例1中所得Bi2O2Se薄膜的原子力显微镜照片；
图5是本发明实施例1中所得Bi2O2Se薄膜的透射电镜低分辨，高分辨及选区电子衍射图片；
图6是本发明实施例1中所得Bi2O2Se薄膜的能谱(EDS)图片；
图7是本发明实施例4中所得Bi2O2Se薄膜的霍尔迁移率和载流子浓度随温度的变化趋势曲线；
图8是本发明实施例2中所得Bi2O2Se薄膜的光学显微镜照片；
图9是本发明实施例3中所得Bi2O2Se薄膜的光学显微镜照片；
具体实施方式
下面结合具体实施例对本发明作进一步阐述，但本发明并不限于以下实施例。所述方法如无特别说明均为常规方法。所述原材料如无特别说明均能从公开商业途径获得。
实施例1
称取0.71克Bi2O3粉末和1.00克Bi2Se3块体(摩尔比1:1)，将其置于管式炉石英管的中心。接着，氟金云母基底被置于距离管式炉中心10-14厘米的下游处。通入载气氩气，维持体系压强为200托。将温度升至630摄氏度，维持5分钟，进行化学气相沉积。沉积完毕后停止载气的通入，自然降温至室温，将沉积有Bi2O2Se薄膜的云母基底取出，即得到本发明提供的层状Bi2O2Se半导体薄膜。
图2为该实施例制备所得层状Bi2O2Se半导体薄膜的晶体结构图；由图可知，Bi2O2Se是一种由(Bi2O2)n层和Sen层在z轴方向上交替连接而形成的二维层状材料；
图3是该实施例所得Bi2O2Se薄膜的光学显微镜照片；由图可知，所得Bi2O2Se二维晶体薄膜形状近乎为规整的正方形，畴区尺寸大约为30-50微米；
图4是该实施例所得Bi2O2Se二维晶体薄膜的典型原子力显微镜照片；由图可知，所得该Bi2O2Se二维晶体的厚度为6.2nm，其表面为原子级平整；
图5是该实施例所得Bi2O2Se二维晶体薄膜的透射电镜低分辨，高分辨及选区电子衍射图片；由图可知，所得Bi2O2Se二维晶体的结晶性非常良好，其中高分辨透射电镜照片给出的0.28nm的面间距与Bi2O2Se晶体的(110)晶面的面间距的理论值(0.28nm)一致；
图6是该实施例所得Bi2O2Se二维晶体薄膜的能谱(EDS)图；由图可知，所得二维晶体薄膜的Bi,O和Se的原子比遵从2:2:1，其中Cu的信号来源于微栅铜网；
图7是该实施例所得Bi2O2Se二维晶体薄膜的霍尔迁移率和载流子浓度随温度变化趋势曲线；由图可知，所得Bi2O2Se二维晶体薄膜的室温霍尔迁移率可达313cm2V-1s-1，且其随着温度降低迅速上升，在低温2K下，霍尔迁移率可达20660cm2V-1s-1。同时其载流子浓度随着温度降低单调递减，由300K下的2.8×1013cm-2降为低温2K下的1.8×1013cm-2。
实施例2
称取1.42克Bi2O3粉末和1.00克Bi2Se3块体(摩尔比2:1)，将其置于管式炉石英管的中心。随后，将氟金云母基底置于距离管式炉中心10-14厘米的下游处。通入载气氩气，维持体系压强为400托。将温度升至580摄氏度，维持30分钟，进行化学气相沉积。沉积完毕后停止载气的通入，自然降温至室温，将沉积有Bi2O2Se薄膜的云母基底取出，即得本发明提供的层状Bi2O2Se半导体薄膜。
图8是本发明实施例2中所得Bi2O2Se薄膜的光学显微镜照片；由图可知，所得Bi2O2Se二维晶体薄膜的畴区尺寸大于100微米。
实施例3
称取2.13克Bi2O3粉末和1.00克Bi2Se3块体(摩尔比3:1)，将其置于管式炉石英管的中心。随后，将氟金云母基底置于距离管式炉中心10-14厘米的下游处。通入载气氩气，维持体系压强为50托。将温度升至680摄氏度，维持60分钟，进行化学气相沉积。沉积完毕后停止载气的通入，自然降温至室温，将沉积有Bi2O2Se薄膜的云母基底取出，即得本发明提供的层状Bi2O2Se半导体薄膜。
图9是该实施例所得Bi2O2Se薄膜的光学显微镜照片；由图可知，所得Bi2O2Se薄膜大面积连续、均匀。
Claims (10)
1.一种制备层状Bi2O2Se半导体薄膜的方法，包括如下步骤：
以Bi2O3粉末和Bi2Se3块体为原料，进行化学气相沉积，沉积完毕即得。
2.根据权利要求1所述的方法，其特征在于：所述Bi2O3粉末与Bi2Se3块体的摩尔比为1～3：1。
3.根据权利要求1或2所述的方法，其特征在于：所述化学气相沉积在基底上进行；
或，所述化学气相沉积在基底上进行，所述基底为云母，化学式为KMg3(AlSi3010)F2。
4.根据权利要求1-3中任一所述的方法，其特征在于：所述化学气相沉积步骤中，载气为氩气；
体系压强为50-400托；
沉积温度为580-680℃；
沉积时间为5-60分钟。
5.根据权利要求1-4中任一所述的方法，其特征在于：所述化学气相沉积在管式炉中进行。
6.根据权利要求5所述的方法，其特征在于：所述原料位于所述管式炉的中心位置；所述基底位于所述管式炉中心位置的下游。
7.根据权利要求1-6中任一所述的方法，其特征在于：所述方法还包括如下步骤：
在所述化学气相沉积步骤之后，将体系自然冷却至室温。
8.权利要求1-7中任一所述方法制备得到的层状Bi2O2Se半导体薄膜。
9.根据权利要求8所述的层状Bi2O2Se半导体薄膜，其特征在于：所述层状Bi2O2Se半导体薄膜的300K下的霍尔迁移率为313cm2V-1s-1，低温2K下的霍尔迁移率为20660cm2V-1s-1。
10.权利要求8或9任一所述层状Bi2O2Se半导体薄膜在制备红外光电探测器或场效应晶体管中的应用。
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