CN105990315B - Metal interconnection structure and preparation method thereof - Google Patents
Metal interconnection structure and preparation method thereof Download PDFInfo
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- CN105990315B CN105990315B CN201510041947.1A CN201510041947A CN105990315B CN 105990315 B CN105990315 B CN 105990315B CN 201510041947 A CN201510041947 A CN 201510041947A CN 105990315 B CN105990315 B CN 105990315B
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Abstract
This application provides a kind of metal interconnection structures and preparation method thereof.Wherein, which includes: intraconnection layer, including the first medium layer with first through hole, and the inner metal layer being filled in first through hole;Top interconnection layer, including the diffusion barrier layer, buffer medium layer and second dielectric layer being set in turn in intraconnection layer, the second through-hole for sequentially passing through second dielectric layer, buffer medium layer and diffusion barrier layer and being connected to first through hole, and it is filled in the top layer metallic layer in the second through-hole, and the mechanical strength of buffer medium layer is greater than the mechanical strength of first medium layer.The relatively huge pressing stress from top layer metallic layer is able to bear due to the buffer medium layer with larger mechanical strength, relatively huge pressing stress contraposition to reduce top layer metallic layer thereby reduces dielectric layer and breakdown probability occurs in the damage of dielectric layer internal structure below.
Description
Technical field
This application involves the technical field of semiconductor integrated circuit, in particular to a kind of metal interconnection structure and its
Production method.
Background technique
In existing semiconductor field, semiconductor circuit has developed into the integrated circuit with multilayer interconnection
(integrated circuit, IC).In the IC of multilayer interconnection, the process for forming metal interconnection structure includes: to pass through etching
Then dielectric layer fills conductive material in groove or through-hole to form groove or through-hole.Wherein, many new materials of application
The performance of device can further be improved with technique.Such as (Ultra low K, ULK, wherein K is that dielectric is normal to ultralow dielectric
It counts and is less than or equal to the RC (resistance and capacitor) that dielectric material 2.5) can be effectively reduced integrated circuit as dielectric layer and prolong
Late.
Existing metal interconnection structure generally includes 10 ' (the usually dielectric materials of first medium layer with first through hole
Layer), and the diffusion barrier layer 20 ' and (the usually SiO of second dielectric layer 30 ' that are sequentially formed on first medium layer2Layer),
In, have second be connected to the first through hole in first medium layer 10 ' logical in second dielectric layer 30 ' and diffusion barrier layer 20 '
Hole, and inner metal layer 410 ' is filled in first through hole, top layer metallic layer 420 ' is filled in the second through-hole, structure is such as
Shown in Fig. 1.
But above-mentioned top layer metallic layer 420 ' has biggish compression, can destroy first medium layer 10 ' and second Jie
The internal structure of matter layer 30 ' makes first medium layer 10 ' and second dielectric layer 30 ' be difficult to bear from top layer metallic layer 420 '
Compared with huge pressing stress, to make first medium layer 10 ' and second dielectric layer 30 ' be easy to puncture, and due to first medium
Layer 10 ' and second dielectric layer 30 ' have very big density contrast, so that first medium layer 10 ' and second dielectric layer 30 ' be made more to hold
Vulnerable to damage, and then improve first medium layer 10 ' and the generation breakdown probability of second dielectric layer 30 '.
Summary of the invention
The application is intended to provide a kind of metal interconnection structure and preparation method thereof, to reduce the top layer gold of metal interconnection structure
Belong to damage of the layer to the dielectric layer being disposed below, and reduces dielectric layer and breakdown probability occurs.
To achieve the goals above, according to the one aspect of the application, a kind of metal interconnection structure is provided, the metal is mutual
Linking structure includes: intraconnection layer, including the first medium layer with first through hole, and the inside being filled in first through hole
Metal layer;Top interconnection layer, including the diffusion barrier layer, buffer medium layer and second medium being set in turn in intraconnection layer
Layer, the second through-hole for sequentially passing through second dielectric layer, buffer medium layer and diffusion barrier layer and being connected to first through hole, and fill out
The top layer metallic layer in the second through-hole is filled, and the mechanical strength of buffer medium layer is greater than the mechanical strength of first medium layer.
Further, buffer medium layer includes the SiN layer being set in turn on diffusion barrier layer and third dielectric layer.
Further, the material of first medium layer and third dielectric layer is dielectric materials, and third dielectric layer is close
Degree is greater than the density of first medium layer.
Further, SiN layer with a thickness of
Further, third dielectric layer with a thickness of
Further, the material of diffusion barrier layer is SiN or TiN, and the material of second dielectric layer is SiO2。
Further, the material of inner metal layer and top layer metallic layer is copper or aluminium.
According to the another aspect of the application, a kind of production method of metal interconnection structure is provided, which includes
Following steps: intraconnection layer is formed, intraconnection layer includes the first medium layer with first through hole, and is filled in first
Inner metal layer in through-hole;And top interconnection layer is formed, top interconnection layer includes being set in turn in intraconnection layer
Diffusion barrier layer, buffer medium layer and second dielectric layer sequentially pass through second dielectric layer, buffer medium layer and diffusion barrier layer simultaneously
The second through-hole being connected to first through hole, and the top layer metallic layer being filled in the second through-hole, the wherein machine of buffer medium layer
Tool intensity is greater than the mechanical strength of first medium layer.
Further, the step of forming top interconnection layer includes: that diffusion barrier material is sequentially formed in intraconnection layer
Layer, buffer medium material layer and second medium material layer;Be sequentially etched through second medium material layer, buffer medium material layer and
Diffusion barrier material layer is to form the second through-hole, to form second dielectric layer, buffer medium layer and diffusion barrier layer;And
Metal material is filled in second through-hole to form the top layer metallic layer.
Further, the step of forming buffer medium material layer includes that SiN material is sequentially formed on diffusion barrier material layer
The bed of material and third layer of dielectric material, and the density of third layer of dielectric material is greater than the density of first medium layer;It is buffered in etching
It in the step of layer of dielectric material, is sequentially etched through third layer of dielectric material and SiN material layer, includes SiN layer and the to be formed
The buffer medium layer of three dielectric layers.
Further, in the step of forming SiN material layer, ultraviolet resistant is formed on the surface of SiN material layer.
Further, the step of forming third layer of dielectric material includes: to form low dielectric material layer in SiN material layer;
UV cured processing is carried out to form third layer of dielectric material to low dielectric material layer.
Further, SiN material layer with a thickness ofThird layer of dielectric material with a thickness of
Using the technical solution of the application, buffer medium layer is provided in the top interconnection layer of metal interconnection structure, and
Buffer medium layer is set to the lower section of top layer metallic layer and the top of first medium layer in top interconnection layer, and buffer medium
The mechanical strength of layer is greater than the mechanical strength of first medium layer.Since buffer medium layer has biggish mechanical strength, and set
Bring to Front interconnection layer lower section, therefore is able to bear the relatively huge pressing stress from top layer metallic layer;Simultaneously because buffer medium layer
It is also located above first medium layer, so that the relatively huge pressing stress for reducing top layer metallic layer aligns inside dielectric layer below
The damage of structure thereby reduces dielectric layer and breakdown probability occurs.
Detailed description of the invention
The accompanying drawings constituting a part of this application is used to provide further understanding of the present application, and the application's shows
Meaning property embodiment and its explanation are not constituted an undue limitation on the present application for explaining the application.In the accompanying drawings:
Fig. 1 shows the schematic diagram of the section structure of existing metal interconnection structure;
Fig. 2 shows the schematic diagram of the section structure of metal interconnection structure provided by the application embodiment;
Fig. 3 shows the flow diagram of the production method of metal interconnection structure provided by the application embodiment;
Fig. 4 is shown in the production method of the metal interconnection structure provided by the application embodiment, and being formed includes tool
There is the first medium layer of first through hole, and the matrix after the intraconnection layer for the inner metal layer being filled in first through hole cuts open
Face structural schematic diagram;
Fig. 5, which is shown, sequentially forms diffusion barrier material layer, buffer medium material layer in intraconnection layer shown in Fig. 4
With the matrix the schematic diagram of the section structure after second medium material layer;
Fig. 5-1 shows and sequentially forms SiN material layer and third dielectric material on diffusion barrier material layer shown in Fig. 5
Layer is to form the matrix the schematic diagram of the section structure after buffer medium material layer;
Fig. 6, which is shown, to be sequentially etched through second medium material layer shown in fig. 5, buffer medium material layer and diffusion barrier
Material layer forms the matrix cross-section structure after second dielectric layer, buffer medium layer and diffusion barrier layer to form the second through-hole
Schematic diagram;
Fig. 7 shows filling metal material in the second through-hole shown in Fig. 6 and is cutd open with forming the matrix after top layer metallic layer
Face structural schematic diagram.
Specific embodiment
It should be noted that in the absence of conflict, the features in the embodiments and the embodiments of the present application can phase
Mutually combination.The application is described in detail below with reference to the accompanying drawings and in conjunction with the embodiments.
It should be noted that term used herein above is merely to describe specific embodiment, and be not intended to restricted root
According to the illustrative embodiments of the application.As used herein, unless the context clearly indicates otherwise, otherwise singular
Also it is intended to include plural form, additionally, it should be understood that, when in the present specification using term "comprising" and/or " packet
Include " when, indicate existing characteristics, step, operation, device, component and/or their combination.
For ease of description, spatially relative term can be used herein, as " ... on ", " ... top ",
" ... upper surface ", " above " etc., for describing such as a device shown in the figure or feature and other devices or spy
The spatial relation of sign.It should be understood that spatially relative term is intended to comprising the orientation in addition to device described in figure
Except different direction in use or operation.For example, being described as if the device in attached drawing is squeezed " in other devices
It will be positioned as " under other devices or construction after part or construction top " or the device of " on other devices or construction "
Side " or " under other devices or construction ".Thus, exemplary term " ... top " may include " ... top " and
" in ... lower section " two kinds of orientation.The device can also be positioned with other different modes and (is rotated by 90 ° or in other orientation), and
And respective explanations are made to the opposite description in space used herein above.
As described in background technique, there is the top layer metallic layer 420 ' of existing metal interconnection structure stronger pressure to answer
Power, and first medium layer 10 ' and second dielectric layer 30 ' have very big density contrast, to make first medium layer 10 ' and second
Dielectric layer 30 ' is easy to puncture.Present inventor studies regarding to the issue above, proposes a kind of metal interconnection
Structure and preparation method thereof.As shown in Fig. 2, the metal interconnection structure includes: intraconnection layer, including with first through hole
One dielectric layer 10, and the inner metal layer 410 being filled in first through hole;Top interconnection layer, including it is set in turn in inside
Diffusion barrier layer 20, buffer medium layer 30 and second dielectric layer 50 on interconnection layer sequentially pass through second dielectric layer 50, buffering is situated between
Matter layer 30 and diffusion barrier layer 20 and the second through-hole being connected to first through hole, and the top-level metallic being filled in the second through-hole
Layer 420, and the mechanical strength of buffer medium layer 30 is greater than the mechanical strength of first medium layer 10.
Above-mentioned metal interconnection structure has the buffer medium layer 30 of larger mechanical strength, and buffer medium layer by setting
30 are set to below top interconnection layer, and buffer medium layer 30 is made to be able to bear the relatively huge pressing stress from top layer metallic layer 420;Together
When the top of first medium layer 10 is also located at due to buffer medium layer 30, to reduce the relatively huge pressing stress of top layer metallic layer 420
Damage to the internal structure for the first medium layer 10 being disposed below thereby reduces dielectric layer and breakdown probability occurs.
In the above-mentioned metal interconnection structure of the application, those skilled in the art can set according to teachings of the present application
The structure composition of buffer medium layer 30.Preferably, buffer medium layer 30 includes the SiN layer being set in turn on diffusion barrier layer 20
310 and third dielectric layer 320.Further, the material of first medium layer 10 and third dielectric layer 320 can be low dielectric material
Material, and the density of third dielectric layer 320 is greater than the density of first medium layer 10.It is close due to having in above-mentioned buffer medium layer 30
Biggish third dielectric layer 320 is spent, to make buffer medium layer 30 that there is biggish mechanical strength, and then is able to bear from top
The relatively huge pressing stress of layer metal layer 420.
In the above-mentioned metal interconnection structure of the application, the thickness of SiN layer 310 and third dielectric layer 320 can be according to reality
Border demand is set, it is preferable that SiN layer 310 with a thickness ofThird dielectric layer 320 with a thickness of
In above-mentioned preferred thickness range, SiN layer 310 and third dielectric layer 320 can have bigger mechanical strength, further hold
By the relatively huge pressing stress from top layer metallic layer 420.
In the above-mentioned metal interconnection structure of the application, diffusion barrier layer 20, second dielectric layer 50, inner metal layer 410
It can also be set according to actual needs with the material of top layer metallic layer 420, it is preferable that the material of diffusion barrier layer 20 is
SiN or TiN, the material of second dielectric layer 50 are SiO2;The material of inner metal layer 410 and top layer metallic layer 420 is copper or aluminium.
It is further preferable that the material of inner metal layer 410 and top layer metallic layer 420 can be the copper product with more high conductivity.Its
In, diffusion barrier layer 20 can also include BD (Black Diamond, black diamond, mainly comprising SiCOH) layer and positioned at BD layers
On silicon dioxide layer (being prepared by TEOS), above-mentioned diffusion barrier layer 20 is mainly used to impurity is stopped to enter it to be covered
Dielectric layer, to improve the reliability of device architecture.
Meanwhile present invention also provides a kind of production methods of metal interconnection structure.As shown in figure 3, the production method packet
It includes following steps: forming intraconnection layer, intraconnection layer includes the first medium layer with first through hole, and is filled in the
Inner metal layer in one through-hole;And top interconnection layer is formed, top interconnection layer includes being set in turn in intraconnection layer
Diffusion barrier layer, buffer medium layer and second dielectric layer, sequentially pass through second dielectric layer, buffer medium layer and diffusion barrier layer
And the second through-hole being connected to first through hole, and the top layer metallic layer being filled in the second through-hole, wherein buffer medium layer
Mechanical strength is greater than the mechanical strength of first medium layer.
In above-mentioned production method, have biggish machinery strong due to being formed in the buffer medium layer below top layer metallic layer
Degree, therefore it is able to bear the relatively huge pressing stress from top layer metallic layer, simultaneously because buffer medium layer is also located at first medium layer
Top, so that the relatively huge pressing stress for reducing top layer metallic layer is aligned in the damage of dielectric layer internal structure below, in turn
It reduces dielectric layer and breakdown probability occurs.
The exemplary implementation of the production method according to metal interconnection structure provided by the present application is described in more detail below
Mode.However, these illustrative embodiments can be implemented by many different forms, and it is not construed as only limiting
In embodiments set forth herein.It should be understood that thesing embodiments are provided so that disclosure herein is thorough
Bottom and complete, and the design of these illustrative embodiments is fully conveyed to those of ordinary skill in the art, in the accompanying drawings,
For the sake of clarity, the thickness of layer and region is expanded, and makes that identical device is presented with like reference characters, thus will
Omit description of them.
Fig. 4 to Fig. 7 is shown in the production method of metal interconnection structure provided by the present application, is obtained after each step
Matrix the schematic diagram of the section structure.Below in conjunction with Fig. 4 to Fig. 7, further illustrate that metal provided herein mutually links
The production method of structure.
Firstly, being formed includes the inside gold for having the first medium layer 10 of first through hole, and be filled in first through hole
Belong to the intraconnection layer of layer 410, and then forms base structure as shown in Figure 4.There are many kinds of the methods for forming the first through hole,
In a preferred embodiment, the step of first through hole is formed in first medium layer 10 includes: to be formed successively to be covered in
Groove masking layer and graphical photoresist on 10 surface of first medium layer, along graphical photoresist etching groove masking layer and
One dielectric layer 10 is to form first through hole.The process conditions of photoetching can be set according to actual process demand, herein no longer
It repeats.Wherein, the material of first medium layer 10 can be dielectric materials, and the material of inner metal layer 410 can be copper or aluminium,
It is further preferable that the material of inner metal layer 410 can be the copper product with more high conductivity.
Completing to be formed includes having the first medium layer 10 of first through hole, and the interior metal being filled in first through hole
After the step of intraconnection layer of layer 410, being formed includes the diffusion barrier layer 20 being set in turn in intraconnection layer, buffering
Dielectric layer 30 and second dielectric layer 50 sequentially pass through second dielectric layer 50, buffer medium layer 30 and diffusion barrier layer 20 and with
Second through-hole of one through-hole connection, and the top interconnection layer of top layer metallic layer 420 being filled in the second through-hole, wherein buffering
The mechanical strength of dielectric layer 30 is greater than the mechanical strength of first medium layer 10.Further, above-mentioned diffusion barrier layer 20 can be with
Including BD (Black Diamond, black diamond mainly include SiCOH) layer and the silicon dioxide layer on BD layer (by TEOS
It is prepared), above-mentioned diffusion barrier layer 20 is mainly used to that impurity is stopped to enter the dielectric layer that it is covered, to improve device junction
The reliability of structure.
In a preferred embodiment, formed top interconnection layer the step of may include: in intraconnection layer according to
Secondary formation diffusion barrier material layer 21, buffer medium material layer 31 and second medium material layer 51, and then formed as shown in Figure 5
Base structure;It is sequentially etched through second medium material layer 51, buffer medium material layer 31 and diffusion barrier material layer 21 with shape
At the second through-hole, to form second dielectric layer 50, buffer medium layer 30 and diffusion barrier layer 20, and then formed as shown in Figure 6
Base structure;And metal material is filled in the second through-hole to form top layer metallic layer 420, and then formed as shown in Figure 7
Base structure.Above-mentioned second through-hole can be formed by photoetching process, and the process conditions of photoetching can be according to actual process need
It asks and is set, details are not described herein.Preferably, the material of second dielectric layer 50 is SiO2, the material of inner metal layer 410 is
Copper or aluminium, further, the material of inner metal layer 410 can be the copper product with more high conductivity.
In the step of forming above-mentioned buffer medium layer 30, a kind of preferred embodiment are as follows: in diffusion barrier material layer
Sequentially form SiN material layer 311 and third layer of dielectric material 321 on 21, and the density of third layer of dielectric material 321 is greater than the
The density of one dielectric layer 10, and then form base structure as shown in fig. 5-1;In the step of etching buffer medium material layer 31
In, it is sequentially etched through third layer of dielectric material 321 and SiN material layer 311, includes SiN layer 310 and third dielectric layer to be formed
320 buffer medium layer 30.Due to having the biggish third dielectric layer 320 of density in above-mentioned buffer medium material layer 31, thus
Make the buffer medium layer 30 being subsequently formed have biggish mechanical strength, and then be able to bear from top layer metallic layer 420 compared with
Huge pressing stress.
There are many kinds of the methods for forming the third layer of dielectric material 321, in a preferred embodiment, in SiN material
The step of third layer of dielectric material 321 is formed on the bed of material 311 includes: to form low dielectric material layer in SiN material layer 311;It is right
Low dielectric material layer carries out UV cured processing to form third layer of dielectric material 321.Meanwhile forming SiN material layer 311
The step of in, it is preferable that form ultraviolet resistant on the surface of SiN material layer 311.Above-mentioned UV cured processing can be with
The mechanical strength of third layer of dielectric material 321 is improved, so that it is biggish mechanical strong to have the buffer medium layer 30 being subsequently formed
Degree, and then it is able to bear the relatively huge pressing stress from top layer metallic layer 420.Meanwhile above-mentioned ultraviolet resistant can reduce SiN
Material layer 311 the UV cured processing the step of in the ultraviolet light irradiation that is subject to.
In above-mentioned preferred embodiment, the thickness of SiN layer 310 and third dielectric layer 320 can be according to actual needs
Set, it is preferable that SiN layer 310 with a thickness ofThird dielectric layer 320 with a thickness ofAbove-mentioned
In preferred thickness range, SiN layer 310 and third dielectric layer 320 can have bigger mechanical strength, further bear to come from
The relatively huge pressing stress of top layer metallic layer 420.
It can be seen from the above description that the application the above embodiments realize following technical effect: the application mentions
A kind of metal interconnection structure that buffer medium layer is provided in top interconnection layer is supplied, buffer medium layer is set to top layer interconnection
The lower section of layer and the top of first medium layer, and the mechanical strength of buffer medium layer is greater than the machinery of first medium layer by force
Degree.Since buffer medium layer has biggish mechanical strength, and it is set to below top interconnection layer, therefore be able to bear and come from
The relatively huge pressing stress of top layer metallic layer;Simultaneously because buffer medium layer is also located above first medium layer, to reduce top layer
The relatively huge pressing stress of metal layer is aligned in the damage of dielectric layer internal structure below, is thereby reduced dielectric layer and is punctured
Probability.
The above is only preferred embodiment of the present application, are not intended to limit this application, for those skilled in the art
For member, various changes and changes are possible in this application.Within the spirit and principles of this application, it is made it is any modification,
Equivalent replacement, improvement etc., should be included within the scope of protection of this application.
Claims (10)
1. a kind of metal interconnection structure, which is characterized in that the metal interconnection structure includes:
Intraconnection layer, including the first medium layer with first through hole, and the inside gold being filled in the first through hole
Belong to layer;
Top interconnection layer, diffusion barrier layer, buffer medium layer and second including being set in turn in the intraconnection layer are situated between
Matter layer sequentially passes through the second dielectric layer, the buffer medium layer and the diffusion barrier layer and connects with the first through hole
The second logical through-hole, and the top layer metallic layer being filled in second through-hole, and the mechanical strength of the buffer medium layer
Greater than the mechanical strength of the first medium layer,
The buffer medium layer includes the SiN layer being set in turn on the diffusion barrier layer and third dielectric layer.
2. metal interconnection structure according to claim 1, which is characterized in that the first medium layer and the third medium
The material of layer is dielectric materials, and the density of the third dielectric layer is greater than the density of the first medium layer.
3. metal interconnection structure according to claim 1, which is characterized in that the SiN layer with a thickness of
4. metal interconnection structure according to claim 2, which is characterized in that the third dielectric layer with a thickness of
5. metal interconnection structure according to claim 1, which is characterized in that the material of the diffusion barrier layer be SiN or
TiN, the material of the second dielectric layer are SiO2。
6. metal interconnection structure according to claim 1, which is characterized in that the inner metal layer and the top-level metallic
The material of layer is copper or aluminium.
7. a kind of production method of metal interconnection structure, which is characterized in that the production method the following steps are included:
Intraconnection layer is formed, the intraconnection layer includes the first medium layer with first through hole, and is filled in described
Inner metal layer in first through hole;And
Formed top interconnection layer, the top interconnection layer include the diffusion barrier layer being set in turn in the intraconnection layer,
Buffer medium layer and second dielectric layer sequentially pass through the second dielectric layer, the buffer medium layer and the diffusion barrier layer
And the second through-hole being connected to the first through hole, and the top layer metallic layer being filled in second through-hole, wherein described
The mechanical strength of buffer medium layer is greater than the mechanical strength of the first medium layer,
The step of forming the top interconnection layer include:
Diffusion barrier material layer, buffer medium material layer and second medium material layer are sequentially formed in the intraconnection layer;
It is sequentially etched through the second medium material layer, the buffer medium material layer and the diffusion barrier material layer with shape
At second through-hole, to form the second dielectric layer, the buffer medium layer and the diffusion barrier layer;And
In second through-hole fill metal material to form the top layer metallic layer,
The step of forming the buffer medium material layer includes that SiN material layer and third are sequentially formed on diffusion barrier material layer
Layer of dielectric material, and the density of the third layer of dielectric material is greater than the density of the first medium layer;
In the step of etching the buffer medium material layer, it is sequentially etched through the third layer of dielectric material and the SiN
Material layer, to form the buffer medium layer for including SiN layer and third dielectric layer.
8. production method according to claim 7, which is characterized in that in the step of forming the SiN material layer, in institute
It states and forms ultraviolet resistant on the surface of SiN material layer.
9. production method according to claim 7, which is characterized in that the step of forming third layer of dielectric material packet
It includes:
Low dielectric material layer is formed in the SiN material layer;
UV cured processing is carried out to form the third layer of dielectric material to the low dielectric material layer.
10. production method according to any one of claims 7 to 9, which is characterized in that the thickness of the SiN material layer
ForThe third layer of dielectric material with a thickness of
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