CN105987757B - Terahertz focal plane array and detection and imaging device - Google Patents
Terahertz focal plane array and detection and imaging device Download PDFInfo
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- CN105987757B CN105987757B CN201510100794.3A CN201510100794A CN105987757B CN 105987757 B CN105987757 B CN 105987757B CN 201510100794 A CN201510100794 A CN 201510100794A CN 105987757 B CN105987757 B CN 105987757B
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- 238000003384 imaging method Methods 0.000 title claims description 13
- 238000001514 detection method Methods 0.000 title claims description 9
- 239000002184 metal Substances 0.000 claims abstract description 57
- 229910052751 metal Inorganic materials 0.000 claims abstract description 57
- 239000000463 material Substances 0.000 claims abstract description 50
- 238000010521 absorption reaction Methods 0.000 claims abstract description 32
- 239000010410 layer Substances 0.000 claims description 47
- 239000002356 single layer Substances 0.000 claims description 5
- 230000005855 radiation Effects 0.000 abstract description 14
- 238000005516 engineering process Methods 0.000 description 8
- 229910052581 Si3N4 Inorganic materials 0.000 description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 7
- 239000003989 dielectric material Substances 0.000 description 5
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 230000002745 absorbent Effects 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000000701 chemical imaging Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000000123 paper Substances 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
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Abstract
The invention discloses a terahertz focal plane array, which comprises a frame, a cantilever beam and an absorption structure; the absorption structure comprises a first metal layer, a first dielectric layer and a metal square array which are sequentially stacked; and the two cantilever beams are respectively positioned on the opposite sides of the metal square array, each cantilever beam is a multi-material deformation beam formed by sequentially connecting the longitudinal part and the transverse part end to end, one end of the multi-material deformation beam is fixedly connected with the frame, and the other end of the multi-material deformation beam is fixedly connected with the absorption structure. The terahertz focal plane array forms a metamaterial resonant cavity and has strong absorption capacity on low-energy terahertz radiation.
Description
Technical Field
The invention belongs to the field of MEMS, and particularly relates to a terahertz focal plane array and a detection and imaging device.
Background
Terahertz radiation is electromagnetic radiation from 0.1 to 10THz, and the terahertz technology is far less mature than infrared and microwave radiation technologies of two side wave bands of the terahertz radiation, but in recent years, with new material technology providing a higher-power emission source, the terahertz technology has been proved to have wide application prospects in deeper physical research and practical application, and is considered as T-Ray changing one of ten major technologies in the future world.
The attraction of terahertz imaging technology to people is mainly due to its phase-sensitive spectral imaging capability, with which people have the potential to achieve material discrimination and functional imaging. Terahertz systems are highly desirable for imaging dielectric materials, including imaging of paper, plastics, ceramics, and the like. These materials are relatively non-absorbing to this band, but due to different refractive indexes, different materials are easily distinguished by using terahertz phase information, and the terahertz imaging technology becomes a hot spot in imaging research.
However, because the electronic energy of the terahertz radiation is relatively low, 1THz is about 4.1meV, the difficulty in detecting the signal is relatively high, and how to detect the terahertz radiation with low signal energy becomes a difficulty in the terahertz imaging technology.
Disclosure of Invention
The invention aims to overcome the defects in the prior art and provides a terahertz focal plane array with strong absorption and a detection and imaging device.
In order to achieve the purpose, the technical scheme of the invention is as follows:
comprises a frame, a cantilever beam and an absorption structure; wherein,
the absorption structure comprises a first metal layer, a first dielectric layer and a metal square array which are sequentially stacked; and an open resonant ring; the metal square array is an array formed by metal squares, the first metal layer and the first dielectric layer are block structures with the outer contour shapes of the metal square array so as to form a metamaterial resonant cavity, the open resonant ring surrounds the periphery of the metal square array, and the open resonant ring and the metal square array are arranged at intervals;
and the two cantilever beams are respectively positioned on the opposite sides of the metal square array, each cantilever beam is a multi-material deformation beam formed by sequentially connecting the longitudinal part and the transverse part end to end, one end of the multi-material deformation beam is fixedly connected with the frame, and the other end of the multi-material deformation beam is fixedly connected with the absorption structure.
Optionally, the split resonant ring is located on the first dielectric layer.
Optionally, the openings of the open resonator ring are symmetrically arranged along the central axis of the metal square array.
Optionally, the cantilever structure further comprises a second dielectric layer, the second dielectric layer is located below the first metal layer, and the other end of the cantilever is fixedly connected with the second dielectric layer.
Optionally, the second dielectric layer is a block structure having the same size as the first metal layer.
Optionally, the cantilever beam is a laminated structure, and at least one section of the cantilever beam is made of a material different from the other sections.
Optionally, adjacent longitudinal portions comprise different materials, and the transverse portion is made of the material of one of the longitudinal portions.
Alternatively, one longitudinal portion is formed of a first material, and the longitudinal portion adjacent thereto is formed of a laminate of the first material and a second material thereon.
Optionally, the cantilever beam is of a single-layer structure, and at least one section of the cantilever beam is made of a material different from other sections.
In addition, the invention also provides a terahertz detection and imaging device, which takes the visible light reflected by any terahertz focal plane array as input.
The terahertz focal plane array provided by the embodiment of the invention comprises an absorption structure and a multi-material deformation beam, wherein the absorption structure comprises a first metal layer, a first dielectric layer and a metal square array which are sequentially stacked, the absorption structure forms a metamaterial resonant cavity and has strong absorption capacity for low-energy terahertz radiation, after the terahertz radiation is absorbed, the temperature of the absorption structure is increased and transmitted to the multi-material deformation beam, different materials of the multi-material deformation beam have different expansion coefficients, thermal deformation can be generated during heat transfer, the absorption structure is deflected under the driving of the thermal deformation, visible light reflected by the metal square array is changed, and the detection and the reutilization of terahertz signals are realized by detecting the visible light.
In addition, an open resonant ring surrounding the metal square array is formed, and the absorption frequency of terahertz radiation is further widened.
Drawings
In order to more clearly illustrate the technical solution of the present invention, the drawings needed to be used in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art that other drawings can be obtained according to these drawings without creative efforts.
Fig. 1 is a schematic top view of a terahertz focal plane array according to an embodiment of the present invention;
fig. 2 is a schematic cross-sectional structure diagram of a terahertz focal plane array according to an embodiment of the invention.
Detailed Description
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in detail below.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention, but the present invention may be practiced in other ways than those specifically described and will be readily apparent to those of ordinary skill in the art without departing from the spirit of the present invention, and therefore the present invention is not limited to the specific embodiments disclosed below.
Next, the present invention will be described in detail with reference to the drawings, wherein the cross-sectional views illustrating the structure of the device are not enlarged partially according to the general scale for convenience of illustration when describing the embodiments of the present invention, and the drawings are only examples, which should not limit the scope of the present invention. In addition, the three-dimensional dimensions of length, width and depth should be included in the actual fabrication.
Referring to fig. 1 and fig. 2, wherein fig. 2 is a schematic cross-sectional view along a dotted line in fig. 1, in an embodiment of the present invention, the absorption structure includes a first metal layer 110, a first dielectric layer 108, and a metal square array stacked in sequence, the metal square array is an array composed of metal squares 104, the metal squares may be square or rectangular, the first metal layer 110 and the first dielectric layer 108 are substantially in the shape of an outer contour of the metal square array, and are in a block structure, that is, the first metal layer 110 and the first dielectric layer 108 have no hollow or non-hollow pattern, and of course, the first metal layer 110 and/or the first dielectric layer 108 may have a pattern for the purpose of improving absorption rate or absorption frequency. The absorption structure forms a resonant cavity of the metamaterial, the metamaterial has the unique characteristics of adjustable dielectric constant, permeability and refractive index, and ultra-strong absorption of low-energy terahertz radiation is realized. The open resonant ring 102 is surrounded around the metal square array, the open resonant ring 102 and the metal square array are arranged at intervals, the open resonant ring 102 is also made of metal material, the opening 1021 can be arranged symmetrically along the central axis of the metal square array, and the frequency of the absorbed radiation can be widened.
In one embodiment, the metal block array is a 2 × 3 metal block 104 array, and the opening 1021 of the split ring 102 is located above the gap between the two metal blocks and is symmetrically arranged along the gap.
The first metal layer, the metal square array and the open resonator ring may be made of metal materials such as Au and Al, the metal square array and the open resonator ring may be formed on the same layer and have the same thickness, in a specific embodiment, the first metal layer, the metal square array and the open resonator ring are made of Au, the first dielectric layer may be made of dielectric materials such as silicon nitride and silicon nitride, and in a specific embodiment, the first dielectric layer is SiNx。
Referring to fig. 1 and 2, cantilever beams 106 are respectively disposed on two opposite side surfaces of the metal square array, where the cantilever beams 106 are multi-material deformation beams formed by sequentially connecting longitudinal portions 1061 and transverse portions 1062 end to end, and the multi-material deformation beam refers to a cantilever beam having at least one section made of a material with a different expansion coefficient from other sections, that is, at least two different materials, so that the cantilever beam deforms when subjected to a thermal change, and the cantilever beam is usually made of a dielectric material or a laminate of a dielectric material and other materials.
In some embodiments, the cantilever beam may be a single layer structure, with at least one section of the cantilever beam being formed of a different material than the other sections, thereby forming a multi-material deformable beam, for example, one longitudinal portion being formed of one material, such as silicon nitride, and the adjacent longitudinal portion being formed of another material, such as silicon oxide. In other embodiments, the cantilever may be a laminated structure, at least one section of the cantilever is made of a material different from that of other sections, for example, a longitudinal portion is made of a laminated layer of silicon nitride and Au, and a longitudinal portion adjacent to the longitudinal portion is made of a laminated layer of silicon nitride and silicon oxide. In an embodiment of the present invention, the cantilever beam is a mixed structure of a single layer and multiple layers, at least one of the multiple layers is made of a different material from the single layer, and may be formed by stacking a first material and a second material thereon, the first material may be, for example, silicon nitride, the second material may be, for example, Au, and the lateral portion is made of the first material, in a specific embodiment, the cantilever beam 106 is a cantilever beam composed of two connected folded-back structures, and one folded-back structure is composed of two longitudinal portions and a lateral portion connected to the adjacent longitudinal portions, as shown in fig. 1 and fig. 2. The cantilever beam formed by bending the plurality of cantilever beams can effectively amplify deformation quantity and improve the capture capability of signals.
One end of the cantilever beam is fixedly connected with the frame 100, the other end of the cantilever beam is fixedly connected with the absorption structure, the absorption structure is fixed on the frame 100 by the cantilever beam, the frame 100 is usually made of a dielectric material, for example, silicon nitride and the like, the absorption structure absorbs radiation and then transfers heat to the cantilever beam, in this embodiment, a second dielectric layer 112 is arranged below the first metal layer 110, the other end of the cantilever beam 106 is fixedly connected with the absorption structure through the second dielectric layer 112, and the second dielectric layer 112 can be a block structure with the same size as the first metal layer, that is, no hollowed or non-hollowed pattern is arranged in the second dielectric layer, so that the contact surface with the first metal layer can be increased, and heat can be better transferred to the cantilever beam. Of course, in other embodiments, the second medium layer may be patterned for the purpose of reducing mass, and may be fixedly connected to the absorbent structure in other ways.
The terahertz focal plane array that this embodiment provided, the absorption structure has formed the resonant cavity of metamaterial, and around setting up the opening resonant ring outside metal square array, this device has stronger absorptive capacity and has the absorption frequency of broad to the terahertz radiation that the energy is low, after absorption terahertz radiation, the absorption structure temperature risees and transmits the deformation roof beam for many materials, the different materials of the deformation roof beam of many materials have different expansion coefficients, when having heat transfer, can take place thermal deformation, under this thermal deformation drives, the absorption structure takes place the angle deflection, make the visible light that metal square array reflects change, through detecting this visible light, realize terahertz signal's detection and reuse.
For the visible light reflected by the array, a 4f optical detection device can be built, so that the terahertz signal can be detected and imaged.
The foregoing is merely a preferred embodiment of the invention and is not intended to limit the invention in any manner.
Although the present invention has been described with reference to the preferred embodiments, it is not intended to be limited thereto. Those skilled in the art can make numerous possible variations and modifications to the present invention, or modify equivalent embodiments, using the methods and techniques disclosed above, without departing from the scope of the present invention. Therefore, any simple modification, equivalent change and modification made to the above embodiments according to the technical essence of the present invention are still within the scope of the protection of the technical solution of the present invention, unless the contents of the technical solution of the present invention are departed.
Claims (10)
1. A terahertz focal plane array is characterized by comprising a frame, a cantilever beam and an absorption structure; wherein,
the absorption structure comprises a first metal layer, a first dielectric layer, a metal square array and an opening resonance ring which are sequentially stacked; the metal square array is an array formed by metal squares, the first metal layer and the first dielectric layer are block structures with the outer contour shapes of the metal square array so as to form a metamaterial resonant cavity, the open resonant ring surrounds the periphery of the metal square array, and the open resonant ring and the metal square array are arranged at intervals; and the two cantilever beams are respectively positioned on the opposite sides of the metal square array, each cantilever beam is a multi-material deformation beam formed by sequentially connecting the longitudinal part and the transverse part end to end, one end of the multi-material deformation beam is fixedly connected with the frame, and the other end of the multi-material deformation beam is fixedly connected with the absorption structure.
2. The terahertz focal plane array of claim 1, wherein the split ring resonator is located on the first dielectric layer.
3. The terahertz focal plane array of claim 2, wherein the openings of the split resonant ring are symmetrically arranged along a central axis of the metal square array.
4. The terahertz focal plane array of claim 1, further comprising a second dielectric layer, wherein the second dielectric layer is located under the first metal layer, and the other end of the cantilever is fixedly connected with the second dielectric layer.
5. The terahertz focal plane array of claim 4, wherein the second dielectric layer is a block structure having the same dimensions as the first metal layer.
6. The terahertz focal plane array of any one of claims 1 to 5, wherein the cantilevers are of a stacked structure, and at least one section of the cantilevers is made of a material different from the other sections.
7. The terahertz focal plane array of claim 6, wherein adjacent longitudinal portions comprise different materials, and the transverse portion is made of the material of one of the longitudinal portions.
8. The terahertz focal plane array of claim 7, wherein one longitudinal portion is formed of a first material and the longitudinal portion adjacent thereto is formed of a stack of the first material and a second material thereon.
9. The terahertz focal plane array of any one of claims 1 to 5, wherein the cantilevers are in a single-layer structure, and at least one section of the cantilevers is made of a different material from other sections.
10. A terahertz detection and imaging device, characterized in that the visible light reflected by the terahertz focal plane array as claimed in any one of claims 1 to 9 is used as input.
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| CN106645016A (en) * | 2016-11-23 | 2017-05-10 | 电子科技大学 | Transmission type terahertz microfluidic channel sensor based on L-shaped structured metamaterial |
| CN107478336B (en) * | 2017-09-01 | 2019-07-23 | 中国科学院电子学研究所 | Terahertz imaging array chip and preparation method thereof, imaging system |
| CN108493567B (en) * | 2018-02-13 | 2020-03-20 | 浙江大学 | Adjustable terahertz resonant cavity based on superstructure and method for analyzing substances by using same |
| CN112140092B (en) * | 2020-09-29 | 2022-05-06 | 西安交通大学 | Terahertz wave induction-based micro robot |
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