CN105981165B - 在载条上制造可结合覆层的方法 - Google Patents

在载条上制造可结合覆层的方法 Download PDF

Info

Publication number
CN105981165B
CN105981165B CN201580008161.8A CN201580008161A CN105981165B CN 105981165 B CN105981165 B CN 105981165B CN 201580008161 A CN201580008161 A CN 201580008161A CN 105981165 B CN105981165 B CN 105981165B
Authority
CN
China
Prior art keywords
carrier strip
layer
metal
band
functional layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201580008161.8A
Other languages
English (en)
Other versions
CN105981165A (zh
Inventor
约阿希姆-弗朗茨·施密特
马赛尔·纽鲍尔
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Heraeus Deutschland GmbH and Co KG
Original Assignee
Heraeus Materials Technology GmbH and Co KG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Heraeus Materials Technology GmbH and Co KG filed Critical Heraeus Materials Technology GmbH and Co KG
Publication of CN105981165A publication Critical patent/CN105981165A/zh
Application granted granted Critical
Publication of CN105981165B publication Critical patent/CN105981165B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78Apparatus for connecting with wire connectors
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/02Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating by means of a press ; Diffusion bonding
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/24Preliminary treatment
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00Layered products comprising a layer of metal
    • B32B15/01Layered products comprising a layer of metal all layers being exclusively metallic
    • B32B15/017Layered products comprising a layer of metal all layers being exclusively metallic one layer being formed of aluminium or an aluminium alloy, another layer being formed of an alloy based on a non ferrous metal other than aluminium
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00Layered products comprising a layer of metal
    • B32B15/04Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B32B15/043Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of metal
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00Layered products comprising a layer of metal
    • B32B15/20Layered products comprising a layer of metal comprising aluminium or copper
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C21/00Alloys based on aluminium
    • C22C21/02Alloys based on aluminium with silicon as the next major constituent
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C9/00Alloys based on copper
    • C22C9/04Alloys based on copper with zinc as the next major constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814Conductive parts
    • H01L21/4821Flat leads, e.g. lead frames with or without insulating supports
    • H01L21/4842Mechanical treatment, e.g. punching, cutting, deforming, cold welding
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495Lead-frames or other flat leads
    • H01L23/49579Lead-frames or other flat leads characterised by the materials of the lead frames or layers thereon
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495Lead-frames or other flat leads
    • H01L23/49579Lead-frames or other flat leads characterised by the materials of the lead frames or layers thereon
    • H01L23/49582Metallic layers on lead frames
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00Electrical equipment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124Aluminium (Al) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/4847Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78Apparatus for connecting with wire connectors
    • H01L2224/7898Apparatus for connecting with wire connectors specially adapted for batch processes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8538Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/85399Material
    • H01L2224/854Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/85417Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/85424Aluminium (Al) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00014Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Manufacturing & Machinery (AREA)
  • Laminated Bodies (AREA)
  • Wire Bonding (AREA)
  • Pressure Welding/Diffusion-Bonding (AREA)
  • Non-Insulated Conductors (AREA)

Abstract

本发明涉及一种在金属载条(4)上制造可结合覆层的方法,该金属载条由含有至少15重量%的锌的黄铜合金制造或者由含有至少0.03重量%的钛、铬、锆和/或钴的析出硬化铜基合金制造,其中在单个加工步骤中,金属中间层(16)和由铝或铝基合金制造的可结合的金属功能层(14)利用轧制复合法被安放且结合至该金属载条(4)上,其中,该中间层(16完全布置在所述功能层(14)和所述金属载条(4)之间,从而在所述功能层(14,36)和所述金属载条(4,32)之间没有产生接触。本发明还涉及利用根据本发明方法制造的覆层载条(20),其中,所述中间层(16)布置和附着在所述载条(4)上,且所述功能层(14)布置和附着在所述中间层(16)上。

Description

在载条上制造可结合覆层的方法
技术领域
本发明涉及在载条上制造可结合覆层的方法和用该方法覆层的载条。
背景技术
在电力电子装置中,铜基条带被用于功率元件与焊线的电连接。从DE4229270A1和DE102008025664A1中知道了可结合覆层可通过轧制被结合至载条。因此例如EP0027520A1和US4,521,257A建议采用铜锡合金作为载体材料。这种材料的缺点是期望载体材料有较高稳定性和较低成本。但是,成本更划算的铜锌合金具有以下缺点,它们可能因其高的锌含量而污染铝基结合层和焊线,因此不利地影响到结合。
在除了良好导电性外还专门需要良好的松弛能力和高度稳定性的电力电子装置中采用越来越强力的铜基材料的趋势正在导致抛弃青铜材料而转向能析出的材料。在利用成本更低的铜锌合金和其它铜基材料情况下已确定焊线可能变得从结合面松脱,所述结合面由此可能脱落。
发明内容
因此,本发明的目的是克服现有技术的缺陷。该目的尤其是找到一种载条制造方法和一种满足可用于载条高功率能力的标准而在制造中未出现不希望的缺陷的载条或具有用此方法制造的电子元件的载条。在此尤其需要避免有害原子污染结合面及焊线与该表面的连接或在结合面与载条之间的连接的撕裂或受损。与此同时,采用成本最划算的可以作为载条的材料应是可行的。
本发明的目的通过一种在金属载条上制造可结合覆层的方法实现,该金属载条由含有至少15重量%的锌的黄铜合金或者含有至少0.03重量%的钛、铬、锆和/或钴的铜基合金制造,其中在单个加工步骤中,金属中间层和由铝或铝基合金制造的可结合的金属功能层利用轧制复合法被安放且结合到金属载条上,其中该中间层完全布置在所述功能层和金属载条之间,因而所述功能层与金属载条之间没有产生接触。
为了能结合,如此设计该功能层,它能与焊线结合,且最好是与由铝或铝基合金制造的焊线结合。或者,由金或金合金制造的焊线也可被结合至该功能层,或者是可被结合至该功能层的。
本发明的载条所优选的合金例如是CuCrZr(UNS:C18400)、CuZr0.1(UNS:C15100)、CuCrSiTi(UNS:C18070)、CuCrAgFeTiSi(UNS:C18080)、CuSnCrNiTi(UNS:C18090)和CuNi1Co1Si(UNS:C70350),它们尤其适合作为用于成本划算的且机械稳定的载条的材料。
对于这种方法,本发明可以规定铝硅合金被用作金属功能层。
这样的铝硅合金可以很好且很稳固地被结合至标准的铝基焊线。
本发明方法的一个改进方案也建议最好是铜或铜基合金或者镍或镍基合金被用作金属中间层。
在此,本发明优选铜和铜基合金是因为它们的成本比镍和镍基合金低。该合金或金属最好不含有超出杂质的锌。这样的中间层适合截获锌原子,即它们适合作为扩散阻挡层。另外,载条自由表面在功能层位置区域范围被覆盖是有利的,因为在此区域中,当覆层载条退火时,没有锌蒸发且沉积在功能层上。锌沉积对该功能层的结合能力有不利的影响。与此同时,利用这样的中间层可以在铝基功能层和由含有至少0.03重量%的钛、铬、锆和/或钴的铜基合金制造的载体层之间产生机械稳定结合。
本发明可进一步规定,所述金属功能层和金属中间层以条带形式安放到金属载条上,其中,用于中间层的条带布置在用于功能层的条带和载条之间,这些上下重叠的条带随后利用轧制复合法相互结合,
通过此方法,工业化大规模生产能以很简单的方式实现。接着,所制造的覆层载条可以按照载体结构应用所期望的宽度和长度被裁切成条。
对于采用条带作为用于所述层和载条的初始产品的本发明方法,还可以规定所述金属载条、金属功能层和金属中间层在被相互结合之前以卷绕的无端条带形式存在,它们被开卷以结合所述层以便彼此相关地安置这些条带,在此,这些条带的结合通过在轧辊之间连续轧制复合所述条带来实现。在此可以规定这些条带以卷的形式来添加。
根据本发明,无端条带是具有至少1米长度的条带,优选是具有在5米到100米之间的长度的条带。因此,该条带当然实际上或就字面意思看不是无端的。此方法的变型也用于进一步简化大规模生产。
本发明方法的一个改进方案也建议,结合有所述中间层和功能层的载条以无端条带形式被卷绕起来。
这种卷绕的覆层载条随后可以通过制造装置被进一步处理。因此,制作成无端条带的初级产品有助于简化用于大规模生产的后续设备。
另外,为了保证在所述载条与中间层之间的稳定机械结合,也可以规定该载条在与其它条带结合之前被清理,尤其用刷子被机械清理和/或以化学方式被清理,最好是在安放该中间层之前被清理,其中,用于中间层的条带和/或用于功能层的条带最好也在结合之前被清理,尤其是用刷子被机械清理和/或以化学方式被清理。
结果,可以保证在将所述中间层和功能层与载条结合起来之前,没有粘性杂质对覆层的机械稳定性产生不利影响。
除了用刷子或除了用刷子清理外,也可以使空气流吹向条带表面以除去残余物如因剥离作业而产生的碎屑,。
本发明也可以规定,利用轧制复合所覆层的载条具有在0.5mm至2mm之间的厚度。轧制复合之后的中间层厚度最好在5μm至30μm之间。功能层厚度最好在10μm至50μm之间。
另外可以规定,覆有功能层的载条被用作用于功率元件与焊线的导电连接的基材,优选用于制造小电流触点。
本发明所基于的目的也通过一种利用这种方法制造的覆层载条来实现,其中该中间层布置且附着在该载条上,该功能层布置且附着在该中间层上。
结果,可以保证该中间层作为化学隔绝的稳定结合件(作为扩散阻挡层)完全布置在所述功能层和金属载条之间。结果获得了在功能层的任何部位都没有出现锌污染或者因该载条表面所存在的上述合金元素呈氧化物或这些元素之间的化合物形式的析出物而削弱与载条的机械结合。
对于这样的载条,也可以规定该金属载条是含有至少15重量%的锌的黄铜合金或者含有至少0.03重量%的钛、铬、锆和/或钴的铜基合金。
利用这些合金,该中间层积极影响覆层载条的性能,或是作为针对锌原子的扩散阻挡层,或是作为载条表面中的上述合金元素呈氧化物或这些元素之间的化合物形式的析出物的桥梁,以获得所述功能层与载体层的机械结合的机械稳定化。
也还可以规定该金属功能层是铝或铝基合金,优选是铝硅合金。
这样的铝硅合金或纯铝可以尤其好且稳定地与标准的铝基焊线结合。
另外可以规定,该覆层载条适合作为用于功率元件与焊线的导电接触的基材,优选用于制造小电流接触。
最后,本发明也可规定金属中间层是铜或铜基合金或者镍或镍基合金。
本发明基于以下出乎意料的发现,即,通过在可结合的功能层与载条之间插入中间层,可以布置该中间层作为支承层用于附着功能层,在此该中间层桥接该载条表面中的薄弱点如钛氧化物夹杂或其它氧化物夹杂,并因此产生在可结合的功能层和载条之间的稳固结合,和/或布置该中间层作为防止干扰性原子尤其是如锌原子从载条浸入功能层的扩散阻挡层,以保护功能层免受由所述原子造成的损害作用。结果,在没有导致制造中的更高瑕疵率或者在焊线与功能表面和/或基材之间的结合的恶化的情况下,使用由比较便宜和/或因其物理性能而更适用的材料制造的载条是可行的。因为所述层结合是通过轧制复合在单个加工步骤中产生的,故可以低成本制造该覆层载条。
在本发明范围内已确定了,适用于电力电子装置的且一般用元素Cr、Ti、Zr和Co(和/或其它元素,如果合适)合金化的铜材料倾向于根据合金含量形成不溶金属夹杂和/或金属氧化物夹杂。材料的例子(含有0.03重量%的铬、0.1重量%的钛、0.02重量%的硅和余量铜的铜基合金)可以存在二氧化钛夹杂,其在剖面中具有如10μm至60μm的直径和/或纵向结构。在材料例如的抛光截面中可以找到晶粒状的不溶二氧化钛夹杂。如果这些微粒位于近表面的区域中,则它们可能因在轧制复合过程中发生的拉伸而到达表面。因为局部非粘附,这导致了粘附失效或者结合连接失效的风险增大。因此,根据本发明的这个发现,人们需要找到此问题的解决之道。
另外,对这样的载条的使用者而言,要求降低轧制复合条带的成本。在此,一个好的选项是更划算地使用的含有大量锌(锌含量至少15%)的黄铜合金。这样的铜锌合金相比于CuSn6(铜锡青铜)提供了显著的载条成本节约。但根据所进行的退火处理,高的锌含量可能导致低熔点锌对结合结构的影响及锌扩散到结合结构中,于是导致结合性能受损。在此,本发明也提供了新的解决之道。
根据本发明,插入扩散阻挡层和/或支承层作为中间层的方法可以被用于一系列的轧制复合材料组合。在此,可以分为整面中间层和选择性中间层。整面中间层主要用作扩散阻挡层和粘附剂,在此,选择性中间层当今已针对连接器条带被专门插入以利用预复合来减小层厚。在两种情况下都采用镍(Ni)或镍基合金。
预复合是对尤其含有贵金属的功能材料的一种预覆层,其用于在实际包覆后能尽量薄地产生和/或卷起功能层。预覆层通常在一个单独步骤中进行。
专门用于选择性轧制复合和可结合的功能表面的应用领域的、作为扩散补偿层和/或粘附剂层的中间层的在线直接覆层方法在此是一种全新做法。需要中间层来补偿和/或避免已经在本发明范围内被发现的上述作用(功能层污染或损害和载条表面上的氧化物夹杂)。在此,中间层的同时包覆使得可以降低附加的加工成本并因此使得可以使用新的载体材料用于可结合的功能表面。
为了避免近表面的不溶微粒(氧化物夹杂)的上述作用(污染/损害和氧化物夹杂)或者避免锌微粒影响结合面,根据本发明,所需的功能性中间层是同时在线覆层的,即在实际的覆层过程中。在此,选择性且整面的(即覆盖载体整个宽度)中间层是可行的,在此优选选择性变体方式。选择性中间层的宽度应该至少与可结合的功能表面的宽度一样,在此,优选在该中间层的两侧上有至少0.5mm的突出以用于粘附目的。
可用于该中间层的材料主要是铜或铜基合金以及镍或镍基合金。所插入的中间层用作用于载体基材的粘附剂,该粘附剂因其高的(粘附)强度和刚性造成析出并且能更好地吸收局部瑕疵。
因此,针对具有高的锌含量的黄铜载体材料所插入的中间层展示出其作为扩散补偿层用于在制造过程(如t=5,10分钟,而T=350,在500℃)中发生的短暂退火和/或扩散过程的作用。锌与时间和温度相关地扩散到可结合的功能表面且优选是铝硅合金(AlSi)中的过程被阻止或者主要发生在中间层内。
作为用于可结合表面的扩散补偿层和/或粘附剂层的特定选择性中间层的在线直接覆层相比于利用预复合的标准加工过程带来了复杂加工步骤的省除。此中间层的使用还允许成本划算地使用新的载体材料,同时保证可结合的功能表面和/或功能层的良好粘附。
作为粘附剂使用在线覆层的选择性中间层可以例如在以载体材料为载条的情况下来实施。
利用本发明的方法所制造的覆层载条可以优选被用在压配合连接技术领域和新型电力电子应用中,在此应该采用更强力的铜基和基于析出物的材料。这种基于析出物的材料因其特定的松弛能力和其高强度而越来越让人有兴趣使用,同时其又具有良好的导电性。另外,扩散补偿层的使用专门对于在低成本的压力传感器范围内的具有高锌含量的黄铜合金来说是可行的。
附图说明
以下,将参照三幅附图但并未限制本发明地解释本发明的其它实施例,其中:
图1示出用于实施本发明方法的装置的剖视示意图,
图2示出根据本发明的轧制复合的覆层载条的剖视示意图,以及
图3示出如图2所示的轧制复合的覆层载条与所结合的焊线的放大剖视示意图。
具体实施方式
图1示出用于实施本发明方法的装置的剖视示意图。在卷取机2或卷轴2上有载条4,载条由CuZn20或者含有至少15重量%的锌的其它黄铜构成,或者由含有至少0.03wt%的钛、铬、锆和/或钴的析出硬化铜基合金构成。例如且尤其优选地采用含有0.3重量%的铬、0.1重量%的钛、0.02重量%的硅和余量铜的铜基合金。在此,用于载条4的潜在材料尤其可以是合金CuCrZr(UNS:C18400)、CuZr0.1(UNS:C15100)、CuCrSiTi(UNS:C18070)、CuCrAgFeTiSi(UNS:C18080)、CuSnCrNiTi(UNS:C18090)和CuNi1Co1Si(UNS:C70350)。
卷状载条4从卷取机2开卷放出并被引导经过刷扫机6或其它装置以清理载条4的待覆层表面。经过清理的载条4随后被输送至轧制复合设备8。
从第二卷取机10或第二卷轴10中,用于功能层的条带14被开卷放出,从第三卷取机12或第三卷轴12,条带16被卷起用于中间层。用于功能层的条带14由铝硅合金构成,而用于中间层的条带16由镍基合金或铜基合金构成。所述条带14、16也被输送至轧制复合设备8。在此,用于中间层的条带16被安放到载条4上,用于功能层的条带14被安放到用于中间层的条带16上。用于中间层的条带16具有至少与用于功能层的条带14相同的宽度,或者更宽。
随后,这些条带4、14、16在轧制复合设备8内的两个轧辊18的帮助下在压力、以及在增高的温度如200℃至600℃下(如果需要),被重叠轧制和覆层。根据本发明,多于一个的用于中间层的条带16和多于一个的用于功能层的条带14可以并行输送且与载条4相结合,从而所制造的功能层和中间层彼此相邻地布置在载条4上。还可以只用一个很宽的用于中间层的条带16完全覆盖载条4以制造大部分或完全覆盖载条4的中间层,并通过安放并轧制复合几个相邻放置的用于功能层的条带14在中间层上制造几个相邻的功能层。
条带4、14、16通过轧制复合设备8被输送且在那里相互结合,并且所制成的覆层载条20在另一个卷取机22或卷轴22上被再次卷起。使用这样的事实上并非无端但可以有从一米至几百米的长度的无端条带所具有的优点是容易实现工业化大规模生产。
图2示出根据本发明的轧制复合的覆层载条30的剖视示意图,该覆层载条例如可以利用与关于图1所述的方法相同的方法来制造。
三条由镍基合金或铜基合金制造的中间层34利用轧制复合被放置在载条32上。由铝或铝硅合金制造的一个功能层36又利用轧制复合被依次附着在这三条中间层34上。
中间层34已经在单个加工步骤中与载条32且与功能层36结合。载条32由析出硬化铜基合金例如CuCrZr(UNS:C18400)、CuZr0.1(UNS:C15100)、CuCrSiTi(UNS:C18070)、CuCrAgFeTiSi(UNS:C18080)、CuSnCrNiTi(UNS:C18090)或CuNi1Co1Si(UNS:C70350)构成,或者由具有至少15重量%的锌含量的黄铜构成。中间层34可以比分别附着于其上的功能层36宽,例如宽了至少0.5mm,在此,优选在中间层两侧上有突出。中间层34覆盖载条32所含的“位于载条32面向结合面方向的上表面且会妨碍与焊线(未示出)结合”的任何氧化物夹杂,如钛氧化物、铬氧化物和/或锆氧化物或金属化合物如由钛、铬和/或锆形成的化合物。结果,可以获得在焊线和功能层36之间的牢固结合以及与载条32的牢固结合,即便存在干扰载条32表面的局部表面夹杂。
轧制复合的中间层34的厚度在5μm至30μm之间。功能层36的厚度在10μm至50μm之间。包括中间层34和功能层36的整个载条32的厚度在0.5mm至2mm之间。
当黄铜合金被用作载条32时,可以防止功能层36被锌污染或损害。于是,中间层34用作扩散阻挡层,其阻止锌原子浸入功能层36。这也具有可以在焊线和功能层36的结合面之间产生牢固结合的作用。
图3示出根据图2的轧制复合的覆层载条30与结合至结合面38的焊线42的放大剖视示意图。在图3中,例如氧化物夹杂40(如钛氧化物夹杂)如图所示在载条32表面上,它被中间层34覆盖。焊线42已经利用已知的方法与功能层36的结合面38相结合。
在以上的说明书中和在权利要求书和实施例中披露的本发明特征可能既就单独而言且也就为了以不同实施方式实现本发明所需要的任何组合而言是重要的。
附图标记说明
2 带有载条的卷取机/卷轴
4 载条
6 刷扫机
8轧制复合设备
10 用于可结合的功能层的进口/用于功能条带的卷轴
12 用于中间层的进口/用于中间层的卷轴条带
14 用于功能层的条带
16 用于中间层的条带
18 轧辊
20 覆层载条
22 带有覆层载条的卷取机/卷轴
30 覆层载条
32 载条
34 中间层
36 功能层
38 结合面
40 夹杂
42 焊线

Claims (17)

1.一种在金属载条(4,32)上制造可结合覆层的方法,该金属载条由含有至少15重量%的锌的黄铜合金制造或者由含有至少0.03重量%的钛、铬、锆和/或钴的铜基合金制造,
其中,在单个加工步骤中,金属中间层(16,34)和由铝或铝基合金制造的可结合的金属功能层(14,36)利用轧制复合法被安放且结合至所述金属载条(4,32)上,
其中,所述中间层(16,34)完全布置在所述功能层(14,36)和所述金属载条(4,32)之间,从而在所述功能层(14,36)和所述金属载条(4,32)之间没有产生接触,并且其中铜或铜基合金或者镍或镍基合金被用作金属中间层(16,34)。
2.根据权利要求1的方法,其特征是,铝硅合金被用作所述金属功能层(14,36)。
3.根据权利要求1的方法,其特征是,所述金属功能层(14,36)和所述金属中间层(16,34)以条带(14,16)形式被安放到所述金属载条(4,32)上,其中,用于所述中间层(16,34)的条带(16)布置在用于所述功能层(14,36)的条带(14)和所述载条(4,32)之间,并且相互叠置的所述条带(14,16)随后利用轧制复合法相互结合。
4.根据权利要求3的方法,其特征是,所述金属载条(4,32)、所述金属功能层(14,36)和所述金属中间层(16,34)在相互结合之前以卷绕无端条带(4,10,12)形式存在,它们被开卷以结合这些层以便彼此相对定位这些条带(4,14,16),其中,所述条带(4,14,16)的结合是通过在轧辊(18)之间连续轧制复合所述条带(4,14,16)来获得的。
5.根据权利要求1的方法,其特征是,与所述中间层(16,34)和所述功能层(14,36)相结合的载条(4,32)以无端条带(20)形式被卷起来。
6.根据权利要求1的方法,其特征是,所述载条(4,32)在与其它条带(14,16,34,36)结合之前被清理,
其中,用于中间层(16,34)的条带(16)和/或用于功能层(14,36)的条带(14)也在结合之前被清理。
7.根据权利要求6的方法,其特征是,所述清理用刷子以机械方式进行和/或以化学方式进行。
8.根据权利要求6的方法,其特征是,所述载条(4,32)在安放所述中间层(16,34)之前被清理。
9.根据权利要求1的方法,其特征是,覆有该功能层(14,36)的所述载条(4,32)被用作用于使功率元件与焊线(42)导电接触的基材。
10.根据权利要求9的方法,其特征是,覆有该功能层(14,36)的所述载条(4,32)被用作用于产生小电流接触的基材。
11.一种利用根据前述权利要求之一的方法制造的覆层载条(20,30),其特征是,所述中间层(16,34)布置和附着在所述载条(4,32)上,且所述功能层(14,36)布置和附着在所述中间层(16,34)上。
12.根据权利要求11的载条(20,30),其特征是,所述金属载条(4,32)是含有至少15重量%的锌的黄铜合金或者含有至少0.03重量%的钛、铬、锆和/或钴的铜基合金。
13.根据权利要求11或12的载条(20,30),其特征是,所述金属功能层(14,36)是铝或铝基合金。
14.根据权利要求13的载条(20,30),其特征是,所述金属功能层(14,36)是铝硅合金。
15.根据权利要求11的载条(20,30),其特征是,所述金属中间层(16,34)是铜或铜基合金或者镍或镍基合金。
16.根据权利要求11的载条(20,30),其特征是,所述覆层载条(20,30)适合作为用于使功率元件与焊线(42)导电接触的基材。
17.根据权利要求16的载条(20,30),其特征是,所述覆层载条(20,30)适合作为用于产生小电流接触的基材。
CN201580008161.8A 2014-02-14 2015-02-12 在载条上制造可结合覆层的方法 Expired - Fee Related CN105981165B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102014101882.6A DE102014101882A1 (de) 2014-02-14 2014-02-14 Verfahren zur Herstellung einer bondbaren Beschichtung auf einem Trägerband
DE102014101882.6 2014-02-14
PCT/EP2015/053006 WO2015121367A1 (de) 2014-02-14 2015-02-12 Verfahren zur herstellung einer bondbaren beschichtung auf einem trägerband

Publications (2)

Publication Number Publication Date
CN105981165A CN105981165A (zh) 2016-09-28
CN105981165B true CN105981165B (zh) 2018-11-30

Family

ID=52469058

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201580008161.8A Expired - Fee Related CN105981165B (zh) 2014-02-14 2015-02-12 在载条上制造可结合覆层的方法

Country Status (5)

Country Link
US (1) US10211180B2 (zh)
EP (1) EP3105786B1 (zh)
CN (1) CN105981165B (zh)
DE (1) DE102014101882A1 (zh)
WO (1) WO2015121367A1 (zh)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3442410A1 (en) 2016-04-15 2019-02-20 Koninklijke Philips N.V. Ecg training and skill enhancement
DE102016110847B4 (de) * 2016-06-14 2022-02-17 Auto-Kabel Management Gmbh Leitungsintegrierter Schalter und Verfahren zum Herstellen eines leitungsintegrierten Schalters
CN115475797B (zh) * 2022-09-30 2024-04-05 肇庆绿宝石电子科技股份有限公司 一种叠层电容器及其制造方法、载条清洗液及制备方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3631119A1 (de) * 1985-09-13 1987-04-16 Mitsubishi Metal Corp Leitermaterial auf basis von kupferlegierungen zur anwendung fuer halbleitervorrichtungen
DE4229270A1 (de) * 1992-09-02 1994-03-03 Heraeus Gmbh W C Schichtverbund für elektronische Bauelemente
DE102008018204A1 (de) * 2008-02-04 2009-08-06 Wickeder Westfalenstahl Gmbh Verbundwerkstoff und Verfahren zur Herstellung eines Verbundwerkstoffs
CN101601144A (zh) * 2007-01-31 2009-12-09 奥斯兰姆奥普托半导体有限责任公司 光电半导体芯片以及用于制造此类芯片的接触结构的方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1139102A (en) * 1966-05-09 1969-01-08 Olin Mathieson Composite metal article and process for producing same
DE2940772C2 (de) * 1979-10-08 1982-09-09 W.C. Heraeus Gmbh, 6450 Hanau Elektrischer Schwachstromkontakt
DE3206262C2 (de) 1982-02-20 1986-02-13 Doduco KG Dr. Eugen Dürrwächter, 7530 Pforzheim Verfahren zur Herstellung von galvanisch selektiv mit Edelmetall beschichteten Bändern als Halbzeug für elektrische Kontakte
DE3343250A1 (de) * 1983-11-30 1985-06-05 W.C. Heraeus Gmbh, 6450 Hanau Verbindungsbauteil fuer elektronische bauelemente
US5476725A (en) * 1991-03-18 1995-12-19 Aluminum Company Of America Clad metallurgical products and methods of manufacture
JP4739734B2 (ja) * 2003-11-28 2011-08-03 ヴィーラント ウェルケ アクチーエン ゲゼルシャフト 電子機械的構成要素用の複合材を製造するための連続層、その複合材及び使用方法
AT504651B1 (de) 2007-05-30 2008-07-15 Miba Gleitlager Gmbh Gleitelement
US8648126B2 (en) * 2009-04-22 2014-02-11 Basf Se Radiation-curable coating compositions

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3631119A1 (de) * 1985-09-13 1987-04-16 Mitsubishi Metal Corp Leitermaterial auf basis von kupferlegierungen zur anwendung fuer halbleitervorrichtungen
DE4229270A1 (de) * 1992-09-02 1994-03-03 Heraeus Gmbh W C Schichtverbund für elektronische Bauelemente
CN101601144A (zh) * 2007-01-31 2009-12-09 奥斯兰姆奥普托半导体有限责任公司 光电半导体芯片以及用于制造此类芯片的接触结构的方法
DE102008018204A1 (de) * 2008-02-04 2009-08-06 Wickeder Westfalenstahl Gmbh Verbundwerkstoff und Verfahren zur Herstellung eines Verbundwerkstoffs

Also Published As

Publication number Publication date
EP3105786A1 (de) 2016-12-21
CN105981165A (zh) 2016-09-28
DE102014101882A1 (de) 2015-08-20
WO2015121367A1 (de) 2015-08-20
US10211180B2 (en) 2019-02-19
EP3105786B1 (de) 2019-04-03
US20170170139A1 (en) 2017-06-15

Similar Documents

Publication Publication Date Title
CN107695559B (zh) 一种银基复合钎料箔材及其制备方法
US20020192492A1 (en) Metal article coated with near-surface doped tin or tin alloy
CN105981165B (zh) 在载条上制造可结合覆层的方法
JPS6297360A (ja) 半導体装置のボンデイングワイヤ用表面被覆高純度銅極細線
US8421246B2 (en) Joint structure and electronic component
JP2014096198A (ja) 自動車用窓ガラスと給電端子の接合方法
KR20190097078A (ko) 표면 처리재와 그 제조방법 및 이 표면 처리재를 이용하여 제작한 부품
TW201020054A (en) Method for inhibiting the formation of palladium-nickel-tin intermetallic in solder joints
TW201005124A (en) Composite material for electrical/electronic component and electrical/electronic component using the same
CN109072470A (zh) 表面处理材料及其制造方法和使用表面处理材料而形成的元件
CN103038879A (zh) 线芯-护套带状线
JPWO2005117112A1 (ja) 半導体装置用リードフレーム
KR101430673B1 (ko) 반도체 디바이스 및 이의 다이 본딩 구조
JP4904810B2 (ja) めっき皮膜及びその形成方法並びに電子部品
CN107768256A (zh) 制造半导体器件的方法和半导体器件
TW201205613A (en) Electronic component
CN107017079A (zh) 线圈部件
JP6127941B2 (ja) はんだ接合材料及びその製造方法
CN106653910A (zh) 一种光伏焊带及其制备方法
JP2701419B2 (ja) 半導体素子用金合金細線及びその接合方法
US20060255437A1 (en) Lead-free semiconductor device
WO1996002941A1 (en) Metal cover for ceramic package and method of making same
CN103824833A (zh) 半导体封装用的铜合金线
CN106783785A (zh) 功率半导体芯片以及用于制造功率半导体芯片的方法
CN102543435A (zh) 电子部件

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20181130

Termination date: 20210212