CN105981137B - The manufacturing method of the semiconductor device of protective film and the use protective film - Google Patents

The manufacturing method of the semiconductor device of protective film and the use protective film Download PDF

Info

Publication number
CN105981137B
CN105981137B CN201580007736.4A CN201580007736A CN105981137B CN 105981137 B CN105981137 B CN 105981137B CN 201580007736 A CN201580007736 A CN 201580007736A CN 105981137 B CN105981137 B CN 105981137B
Authority
CN
China
Prior art keywords
protective film
semiconductor wafer
adhesion coating
pasted
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201580007736.4A
Other languages
Chinese (zh)
Other versions
CN105981137A (en
Inventor
助川诚
木下仁
田原修二
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsui Chemicals Tohcello Inc
Original Assignee
Mitsui Chemicals Tohcello Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsui Chemicals Tohcello Inc filed Critical Mitsui Chemicals Tohcello Inc
Publication of CN105981137A publication Critical patent/CN105981137A/en
Application granted granted Critical
Publication of CN105981137B publication Critical patent/CN105981137B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J133/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
    • C09J133/04—Homopolymers or copolymers of esters
    • C09J133/06—Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, the oxygen atom being present only as part of the carboxyl radical
    • C09J133/062—Copolymers with monomers not covered by C09J133/06
    • C09J133/068—Copolymers with monomers not covered by C09J133/06 containing glycidyl groups
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J133/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
    • C09J133/04—Homopolymers or copolymers of esters
    • C09J133/06—Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, the oxygen atom being present only as part of the carboxyl radical
    • C09J133/062—Copolymers with monomers not covered by C09J133/06
    • C09J133/066—Copolymers with monomers not covered by C09J133/06 containing -OH groups
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C09J7/22—Plastics; Metallised plastics
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
    • C09J7/35—Heat-activated
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/12—Esters of monohydric alcohols or phenols
    • C08F220/16—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms
    • C08F220/18—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
    • C08F220/1802—C2-(meth)acrylate, e.g. ethyl (meth)acrylate
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/0008—Organic ingredients according to more than one of the "one dot" groups of C08K5/01 - C08K5/59
    • C08K5/0025—Crosslinking or vulcanising agents; including accelerators
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/40—Additional features of adhesives in the form of films or foils characterized by the presence of essential components
    • C09J2301/408—Additional features of adhesives in the form of films or foils characterized by the presence of essential components additives as essential feature of the adhesive layer
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2433/00—Presence of (meth)acrylic polymer
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2479/00—Presence of polyamine or polyimide
    • C09J2479/08—Presence of polyamine or polyimide polyimide
    • C09J2479/086—Presence of polyamine or polyimide polyimide in the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
    • H01L2221/68386—Separation by peeling

Abstract

The present invention is a kind of protective film; it is pasted onto the circuit forming face of semiconductor wafer; and there is polyimide base material and thermosetting property adhesion coating; the thermosetting property adhesion coating is arranged on a surface of above-mentioned polyimide base material, and by being 140 DEG C or more and the acquisition of the composition of 200 DEG C of hot radical producing agent (b) below and crosslinking agent (c) comprising acrylic acid series polymeric compounds (a), 1 minute half life temperature.

Description

The manufacturing method of the semiconductor device of protective film and the use protective film
Technical field
The manufacturing method of semiconductor device the present invention relates to protective film and using the protective film.
In particular to used in the manufacturing process of the semiconductor devices such as discrete device, IGBT elements, protection half The protective film of the circuit forming face of conductor chip and used the protective film semiconductor device manufacturing method.
Background technology
When manufacturing discrete device, IGBT elements, in the past, wafer back surface side is implemented：The circuit of semiconductor wafer is non- The process that forming face (hereinafter, being properly termed as " chip back surface ") is ground, by the processing modified layer liquid etc. of chip back surface The process being etched, in the process that chip back surface forms metal electrode, in addition, further in crystalline substance in the case of IGBT elements The process that the piece back side carries out ion implanting, the various processing such as annealing operation that the dopant of injection is activated.
Wherein, chip back surface is ground and in the process that semiconductor wafer is thin layer, semiconductor in order to prevent Breakage, the pollution of chip paste in the circuit forming face (hereinafter, being properly termed as " wafer surface ") of semiconductor wafer and have adhesion The protective film of layer.
As such protective film, following such protective film can be enumerated.
For example, in Japanese Unexamined Patent Publication 2011-216735 bulletins and Japanese Unexamined Patent Publication 2011-213919 bulletins, disclose " the chip processing adhesive tape for having the adhering agent layer of radiation-curable on the substrate resin film being made of polyester resin ".
In addition, disclosed in Japanese Unexamined Patent Publication 2010-287819 bulletins, " on base material film, will include adhesion ingredient and The adhering agent layer for the middle resin layer and radiation-curable that the middle resin layer composition of cure component is solidified to form is successively Semiconductor wafer processing adhesive tape obtained by lamination ".
In addition, being disclosed in Japanese Unexamined Patent Publication 2011-249608 bulletins, " in the substrate resin film containing polyester resin On, have the semiconductor wafer surface protection adhesive tape for the adhering agent layer being made of the resin combination of radiation-curable ".
Other than above-mentioned protective film, as the film for having adhesion coating, as in partly leading with heating under reduced pressure process The protective film for being pasted on semiconductor when the processing of body and being used to protect it, for example, Japanese Unexamined Patent Publication 2012-109585 public affairs Disclosed in report " at least one face of base material, have comprising light-cured type sticker, specified particle diameter silicon dioxide microparticle and The semiconductor machining band of the adhering agent layer of gas producing agent ".
Further, it as the film for having adhesion coating, is fixed as the semiconductor wafer for making adhesion strength reduce by heating With piece, for example, being disclosed in Japanese Unexamined Patent Publication 10-025456 bulletins, " a kind of semiconductor wafer fixation piece, feature exist In being to form the semiconductor wafer in main portion with the pressure sensitive adhesive being stacked on the support by the support of sheet to fix By 100 mass parts of base polymer, 10~900 mass parts of being heating and curing property compound and added with the principal component of piece, the sticker 0.1~10 mass parts of thermal polymerization are formed ".
In addition, as the adhesive sheet suitable for decoration piece etc., for example, being disclosed in Japanese Unexamined Patent Publication 8-302301 bulletins , " with 1 × 108cc·cm/cm2500 μm of film-like substrates below of thickness of the oxygen transmission coefficient of seccmHg or more On, formed do not cure if oxygen exists or retardation of curing but by heating made of carrying out cured curability adhering agent layer plus Thermally strippable adhesive sheet.", also disclose that the curability adhering agent layer of such adhesive sheet with adherence rubber series resin (A) 100 Mass parts have coordinated 50~150 mass parts of compound (B) containing olefinic unsaturated group, organic peroxide (C) as benchmark 0.001~1.0 mass parts of 0.1~15 mass parts, 0.01~5.00 mass parts of crosslinking agent (D) and polymerization inhibitor (E).
The adhesive sheet has and can be easily peeled off such feature by heating.
Invention content
Problem to be solved by the invention
In the above-mentioned various processing implemented to wafer back surface side, it is included in the work of heating under vacuum semiconductor wafer Sequence.
In particular, in the process processed as metal evaporation, metal sputtering and ion implanting, semiconductor wafer Carry out 200 DEG C or more of heating under vacuum in vacuum plant.
If the stickup recorded in each patent document as described above to be had to the semiconductor wafer of the film of adhesion coating, For heating under vacuum to 200 DEG C or more, then film, which floats, or adhesion strength rises to from the stripping of semiconductor wafer sometimes becomes tired Difficult degree.If film floats, transport becomes difficult.
That is, present situation is：The previous film for having adhesion coating is not applied for carrying out 200 DEG C or more of heating under vacuum Process.
Here, in this specification, 200 DEG C or more under vacuum of heating is properly termed as " heating in vacuum ".
Under above such situation, the subject of the invention is to provide applied to the semiconductor device for including following processes Manufacturing method when, protect the circuit forming face of semiconductor wafer, while inhibiting the generation floated, also, from semiconductor wafer The excellent protective film of fissility when stripping, the process is that protective film is pasted onto to the circuit forming face of semiconductor wafer, is made After thermosetting property adhesion coating heat cure, the process that is directly carried out under heating in vacuum in the state of being pasted onto semiconductor wafer.
In addition, other projects of the present invention be to provide used said protection film, be included in and carry out under heating in vacuum The manufacturing method of the semiconductor device of process.
The method used for solving the problem
Method for solving the above subject is as described below.
A kind of protective films of 1 ＞ of ＜, are pasted onto the circuit forming face of semiconductor wafer, and have：
Polyimide base material；And
Thermosetting property adhesion coating, the thermosetting property adhesion coating are arranged on a surface of above-mentioned polyimide base material, and by comprising Acrylic acid series polymeric compounds (a), 1 minute half life temperature be 140 DEG C or more and 200 DEG C of hot radical producing agent (b) below with The composition of crosslinking agent (c) obtains.
Protective films of 2 ＞ of ＜ according to 1 ＞ of ＜, the molecular weight of above-mentioned hot radical producing agent (b) be 200 or more and 1000 or less.
Protective films of 3 ＞ of ＜ according to 2 ＞ of ＜ 1 ＞ or ＜, above-mentioned composition further include the propylene of 2 functions or more Acid system's oligomer (d).
Any one of them protective film of 41 ＞ of ＞ ＜ of ＜~3 ＞ of ＜, above-mentioned acrylic acid series polymeric compounds (a) are to have in side chain There is the polymer of the double bond of free-radical reactive.
5 ＞ of ＜ are according to any one of them protective film of 1 ＞ of ＜~＜, 4 ＞, the manufacturing method as semiconductor device In following protective films use, the manufacturing method of the semiconductor device includes following processes：
(1) in the circuit forming face of semiconductor wafer, by the protective film with thermosetting property adhesion coating with the circuit forming face The adhering processes that the mode being in contact with the thermosetting property adhesion coating is pasted；
(2) the above-mentioned semiconductor wafer for having pasted said protection film is heated in 120 DEG C or more and 180 DEG C temperature below Heating process；
(3) after the heating process of (2), the above-mentioned semiconductor wafer for having pasted said protection film is stood under vacuum Standing operation；And
(4) after the Standing operation of (3), under conditions of vacuum and 200 DEG C or more, in above-mentioned semiconductor wafer The treatment process of any one of metal evaporation, metal sputtering and ion implanting processing is implemented in the non-formation face of circuit.
A kind of manufacturing methods of semiconductor device of 6 ＞ of ＜ comprising following processes：
(A) in the circuit forming face of semiconductor wafer, by any one of them protective film of 1 ＞ of ＜~＜, 5 ＞ with above-mentioned The adhering processes that the mode that thermosetting property adhesion coating is in contact with the circuit forming face is pasted,
(B) grinding process for being ground the non-formation face of circuit in above-mentioned semiconductor wafer；
(C) said protection film will have been pasted and has been ground the above-mentioned semiconductor wafer in the non-formation face of circuit at 120 DEG C or more And the heating process of 180 DEG C of temperature heating below；
(D) after the heating process of (C), the above-mentioned semiconductor wafer for having pasted said protection film is stood under vacuum Standing operation；
(E) after the Standing operation of (D), under conditions of vacuum and 200 DEG C or more, to having pasted said protection film The processing of any one of metal evaporation, metal sputtering and ion implanting is implemented in the non-formation face of circuit in above-mentioned semiconductor wafer Treatment process；And
(F) stripping process for removing said protection film from above-mentioned semiconductor wafer.
The manufacturing method of semiconductor devices of 7 ＞ of ＜ according to 6 ＞ of ＜, above-mentioned (A) adhering processes after and on Before the grinding process for stating (B), including following processes：
(i) on the surface of the polyimide base material of said protection film, the process of grinding semiconductor wafer film is pasted.
The manufacturing method of semiconductor devices of 8 ＞ of ＜ according to 6 ＞ of ＜, used in the adhering processes of above-mentioned (A) Said protection film is made of the surface mount grinding semiconductor wafer film of the polyimide base material of the protective film.
The manufacturing method of semiconductor devices of 9 ＞ of ＜ according to 8 ＞ of ＜ 7 ＞ or ＜, above-mentioned (B) grinding process it Afterwards and before the heating process of above-mentioned (C), including following processes：
(ii) process for removing above-mentioned grinding semiconductor wafer film from said protection film.
10 ＞ of ＜ are according to the manufacturing method of any one of them semiconductor device of 6 ＞ of ＜~＜, 9 ＞, the mill of above-mentioned (B) Cut the outer peripheral edge portion that process is the non-formation face of circuit in the above-mentioned semiconductor wafer of residual, the process that inner peripheral portion is ground.
The effect of invention
According to the present invention it is possible to provide in the manufacturing method applied to the semiconductor device including following processes, protect The circuit forming face of semiconductor wafer, while inhibiting the generation that floats, also, fissility when being removed from semiconductor wafer is excellent Protective film, the process is that protective film is pasted onto to the circuit forming face of semiconductor wafer, makes thermosetting property adhesion coating heat cure Afterwards, the process directly carried out under heating in vacuum in the state of being pasted onto semiconductor wafer.
In addition, according to the present invention it is possible to provide used said protection film, be included in the process carried out under heating in vacuum Semiconductor device manufacturing method.
Specific implementation mode
Hereinafter, being explained in detail to the present invention.
In the present specification, it refers to the front and back recorded numerical value conduct comprising "~" to use the numberical range that "~" indicates The range of lower limiting value and upper limit value.
The protective film of the present invention is the protective film for the circuit forming face for being pasted onto semiconductor wafer, has polyimide base material With thermosetting property adhesion coating, which is arranged on a surface of above-mentioned polyimide base material, and by including acrylic acid Based polymer (a), 1 minute half life temperature are 140 DEG C or more and 200 DEG C hot radical producing agent (b) below (hereinafter, suitable When be known as " particular thermal free-radical generating agent (b) ") and crosslinking agent (c) composition acquisition.
By using composition as described above, even if to be applied to be included in partly leading for the process carried out under heating in vacuum The manufacturing method of body device also can get the circuit forming face of protection semiconductor wafer, while inhibit the generation floated, also, The excellent protective film of fissility when being removed from semiconductor wafer.
It is not determined about the relationship with the effect played by using composition of the invention, but following presumption.
1 minute half life temperature included in thermosetting property adhesion coating is 140 DEG C or more and 200 DEG C of hot radicals below Producing agent (b) has following properties：It decomposes and is difficult under drying condition when preservation at room temperature, when forming thermosetting property adhesion coating Start, also, even if not being to show from the stripping of semiconductor wafer to become difficult heating condition as the adhesion strength of degree It decomposes.
In addition, polyimide base material has following properties：Softening caused by heating is difficult to happen, can at high temperature To maintain high elastic modulus, coefficient of thermal expansion is close with semiconductor wafer, and further, percent thermal shrinkage is low.
Speculate by the way that the thermosetting property adhesion coating and polyimide base material of hot radical producing agent (b) as described above will be used Combination makes thermosetting property adhesion coating heat cure to which the protective film of the present invention is by being pasted onto the circuit forming face of semiconductor wafer, To which even high temperature is also difficult to expand, and it is possible to form the adhesion coating (thermosetting with the release performance from semiconductor wafer After change).
As a result, by the presence of the adhesion coating after solidification, though protective film of the invention under heating in vacuum this The process carried out under the harsh environment of sample can also inhibit the generation floated, make the guarantor of the circuit forming face of semiconductor wafer Shield continues, and then, excellent fissility can also be shown when being removed from semiconductor wafer.
Hereinafter, being illustrated to the polyimide base material and thermosetting property adhesion coating that constitute protective film of the invention.
(thermosetting property adhesion coating)
Thermosetting property adhesion coating (hereinafter, being abbreviated as " adhesion coating " sometimes) in the present invention is by comprising acrylic acid series polymeric compounds (a), 1 minute half life temperature is the combination of 140 DEG C or more and 200 DEG C hot radical producing agent (b) below and crosslinking agent (c) Object obtains.
Acrylic acid series polymeric compounds (a)-
Acrylic acid series polymeric compounds (a) are the adhesive resins on the basis for becoming the sticker in adhesion coating, and can use will Polymer obtained by the several copolymerization of general (methyl) acrylate monomer.As (the first for constituting acrylic acid series polymeric compounds (a) Base) acrylate monomer, sticker well known monomer on the way can be useful in.
About the protective film of the present invention, from the aspect of being exposed to high temperature, acrylic acid series polymeric compounds (a) it is also preferred that thermal decomposition The high polymer of temperature.In general, acrylic acid series polymeric compounds obtained by being polymerize by acrylate monomer with by methacrylic acid Acrylic acid series polymeric compounds obtained by ester monomer polymerization, which are compared, has heat resistance (in terms of pyrolytic), therefore more preferably with propylene The polymer of (for example, 50 moles of % or more) based on acid ester monomer.
As the monomer used to obtain acrylic acid series polymeric compounds (a), suitable monomer can enumerate for example, acrylic acid Methyl esters, methyl methacrylate, ethyl acrylate, ethyl methacrylate, propyl acrylate, propyl methacrylate, propylene Acid butyl ester, butyl methacrylate, Hexyl 2-propenoate, hexyl methacrylate, 2-ethyl hexyl acrylate, 2-Propenoic acid, 2-methyl-, octyl ester, third Olefin(e) acid nonyl ester, nonyl methacrylate, dodecylacrylate, lauryl methacrylate etc..
The pendant alkyl group of these monomers can be that straight-chain may be branched.In addition, above-mentioned alkyl acrylate Two or more kinds may be used according to purpose for monomer.
From the aspect of the characteristic (such as adherence etc.) of adjustment adhesion coating, preferably acrylic acid series polymeric compounds (a) have The functional group reacted with aftermentioned crosslinking agent (c).
Specifically, as the functional group reacted with crosslinking agent (c) possessed by acrylic acid series polymeric compounds (a), preferably Carboxylic acid group, hydroxyl, glycidyl etc..In addition, carboxylic acid group, hydroxyl, glycidyl etc. with as the polyisocyanate cyanogen of crosslinking agent (c) Acid esters, polyfunctional epoxy resin reaction.As importing when functional group, as long as by (methyl) third with such functional group Olefin(e) acid ester monomer is copolymerized.
As (methyl) acrylate monomer with the functional group reacted with crosslinking agent (c), can enumerate for example, propylene Acid, methacrylic acid, crotonic acid, itaconic acid, maleic acid, fumaric acid etc. have the monomer of carboxyl；Hydroxy-ethyl acrylate, methyl-prop Olefin(e) acid hydroxyl ethyl ester, hydroxypropyl acrylate, hydroxy propyl methacrylate etc. have the monomer of hydroxyl；Glycidyl acrylate, first Base glycidyl acrylate etc. has the monomer of glycidyl；Deng.
In addition, from the aspect of keeping adhesion coating cured, preferably acrylic acid series polymeric compounds (a) have free radical anti-in side chain The double bond of answering property.When the double bond of the free-radical reactive as importing, as long as making that there are the double of such free-radical reactive (methyl) acrylate monomer of key carries out addition reaction with the host polymer side chain after copolymerization.
As the combination of such reaction, it can enumerate and (methyl) acrylic acid is copolymerized to main chain as the advance of well known method Ethylene oxidic ester makes the method that the glycidyl of (methyl) acrylic acid and main chain carries out addition reaction as secondary response；In advance (methyl) acrylic acid first is copolymerized to main chain, makes (methyl) glycidyl acrylate and (methyl) acrylic acid portion as secondary response Divide the method for carrying out addition reaction；The above-mentioned monomer with hydroxyl is copolymerized to main chain in advance, 2- methyl-props are made by secondary response Alkene trimethylammonium isocyanates, 2- acryloyloxyethyl isocyanates, 1,1- (double acryloyloxymethyls) ethyl isocyanide Acid esters etc. has the method that (methyl) acrylate of isocyanate group carries out addition reaction with hydroxylic moiety；Deng.
As the present invention protective film, the use for requiring heat resistance on the way, from the aspect of pyrolytic, as above Compared with the reaction of hydroxyl, acid is better with reacting for glycidyl for the addition reaction for the side chain enumerated and isocyanates.
The double bond in side chain by acrylic acid series polymeric compounds (a) with free-radical reactive, to utilize by particular thermal certainly The free radical generated by base producing agent (b) can carry out the mutual reaction of acrylic acid series polymeric compounds (a) or acrylic polymeric Object (a) is reacted with acrylic oligomers more than aftermentioned 2 function.
Acrylic acid series polymeric compounds (a) are in the composition preferably with 50 mass % or more and 99.5 mass % range packets below Contain, more preferably includes with 65 mass % or more and 99 mass % ranges below.
Particular thermal free-radical generating agent (b)-
In the present invention using particular thermal free-radical generating agent (b) be consider it is following such for the use of carry out the ingredient of selection.
That is, in the present invention, (certainly comprising acrylic acid series polymeric compounds (a), particular thermal by each ingredient used when obtaining adhesion coating By base producing agent (b) and crosslinking agent (c)) it is dissolved in adhesion coating formation coating fluid made of solvent, it is coated on polyimide-based It on material (or partition board), is dried, makes protective film.
Due to being heated in the drying, preferably selects at the temperature of such drying, decompose point for being difficult to start Solve the substance of temperature.In addition, it is also preferred that the high substance of decomposition temperature in terms of storage stability at room temperature.On the other hand, such as Fruit decomposition temperature is excessively high, then needs to be set as high temperature to decompose, and adherence is surging under the hot conditions, from semiconductor wafer Stripping become difficult, therefore the also excessively high substance of not preferred decomposition temperature.
Consider from the above, particular thermal free-radical generating agent (b) used in the present invention needs 1 minute half life temperature It is 140 DEG C or more and 200 DEG C or less.
Here, 1 minute half life temperature of particular thermal free-radical generating agent is preferably 145 DEG C or more and 180 DEG C or less.
In addition, if when above-mentioned dry, volatilize together with solvent, then the particular thermal free-radical generating agent amount in adhesion coating (b) it tails off, adequately reaction becomes difficult to obtain, therefore it is big to preferably select molecular weight, it is difficult to the substance of volatilization.
From the aspect of in this way, the molecular weight of particular thermal free-radical generating agent is preferably 200~1000, and more preferably 200 ~700, further preferably 300~700.
As particular thermal free-radical generating agent (b), it is the well known peroxide of above range that 1 minute half life temperature, which can be used, Compound, azo-compound etc..
As the concrete example of particular thermal free-radical generating agent (b), example as shown below can be enumerated, but the present invention does not limit In this.
In addition, in concrete example below other than compound name, commercially available product title (all days are also recorded together Oily Co. Ltd. system), molecular weight and 1 minute half life temperature.
[table 1]
As the specific commercially available product of particular thermal free-radical generating agent (b), preferably for example, Japan Oil Co PERHEXA MC、PERHEXA TMH、PERHEXAHC、PERHEXA C、PERTETRA A、PERHEXYL I、PERBUTYL 355、PERBUTYL L、PERBUTYL E、PERHEXYL Z、PERHEXA 25Z、PERHEXA 22、PERHEXA V、 PERBUTYL P, PERCUMYL D, PERHEXYL D, PERHEXA 25B, PERBUTYL C, PERHEXYNE 25B etc..
As the additive amount of particular thermal free-radical generating agent (b), relative to the monomer for constituting acrylic acid series polymeric compounds (a) 100 mass parts of total amount, more than preferably 0.1 mass parts and 5 is below mass part, more than more preferably 0.2 mass parts and 2 mass parts Hereinafter, more than further preferably 0.3 mass parts and 1 is below mass part.
If the additive amount of particular thermal free-radical generating agent is very few, the heat cure for generating adhesion coating sometimes is insufficient, glues The surging problem of the property, on the other hand, if excessively, generating generation x-ray photoelectron spectrum analysis (XPS/ sometimes ESCA the semiconductor caused by the substance of decomposition product that), molecule detector etc. detects (free radical in conjunction with object etc.) The problem of pollution of chip, pollution of vacuum plant.
Crosslinking agent (c)-
Crosslinking agent (c) in the present invention is that can be reacted with acrylic acid series polymeric compounds (a), forms acrylic acid series polymeric compounds (a) ingredient of crosslinked (three-dimensional cross-linked body).
By make acrylic acid series polymeric compounds (a) become crosslinked, so as to adjust adhesion coating initial stage adhesion strength, adjust The cutting easiness (the cut-out easiness of cut surface adhesion coating) of whole band, pressurizing and deformation etc., may further inhibit acrylic acid The thermal decomposition of the main chain of based polymer (a).
As crosslinking agent (c), can be used as the common cross-linking agent for being used for acrylic acid series sticker, isocyanates system, The crosslinking agent etc. of epoxy.
In addition, from the aspect of the raising of the heat resistance (pyrolytic) of above-mentioned acrylic acid series polymeric compounds (a), preferably select The high crosslinking agent of heat resistance (pyrolytic).
In the present invention, as preferred crosslinking agent (c), crosslinking agent as shown below can be enumerated, but the present invention does not limit In this.
That is, it is sweet to enumerate D-sorbite poly epihydric alcohol base ether, polyglycereol poly epihydric alcohol base ether, pentaerythrite bunching water Oleyl ether, two glycerine poly epihydric alcohol base ethers, glycerine poly epihydric alcohol base ether, neopentyl glycol diglycidyl ether, isophthalic two Phenol diglycidyl ether, as epoxies based compounds such as Mitsubishi GAS chemistry Tetrad C, the Tetrad X of trade name；Four Methylene diisocyanate, hexamethylene diisocyanate, 3 addition product of toluene di-isocyanate(TDI) of trimethylolpropane, polyisocyanate The isocyanates based compounds such as cyanate, isocyanurate type isocyanates；Deng.
If crosslinking agent is few, adhesion coating before curing becomes soft and has mobility, there is the wetting to wafer surface Property, the excellent tendency of concave-convex tracing ability.However, if crosslinking agent is few, shape stability is deteriorated, in the protective film for making the present invention It is coiled come in the case of preserving may difference of height trace become prone to occur.In addition, may be glued in the protective film of the cutting present invention The cut-out for agent is deteriorated.
On the other hand, if crosslinking agent is more, adhesion coating before curing becomes hard sometimes, the wetting to wafer surface Property, concave-convex tracing ability be difficult to obtain, floating for protective film occurs under heating in vacuum.
In the present invention, as long as considering aspect as described above to determine the additive amount of crosslinking agent (c).
About the additive amount appropriate of crosslinking agent, the acrylic acid more than 2 functions in the composition for being added to the present invention It is in the case that oligomer is more, the tendency for becoming above-mentioned soft sticker is promoted, therefore can more be added.
For example, the additive amount as crosslinking agent (c), the total amount 100 relative to the monomer for constituting acrylic acid series polymeric compounds (a) Mass parts, more than preferably 0.1 mass parts and 20 is below mass part, and more than more preferably 0.2 mass parts and 10 is below mass part.
Acrylic oligomers (d)-more than -2 functions
Composition for obtaining the thermosetting property adhesion coating in the present invention includes preferably further the acrylic acid of 2 functions or more It is oligomer (d).
Acrylic oligomers (d) more than 2 functions are the acrylic acid series of the double bond with 2 or more free-radical reactive Oligomer, and reacted by the free radical generated by particular thermal free-radical generating agent (b), contribute to consolidating for adhesion coating The ingredient of change.
In above-mentioned acrylic acid series polymeric compounds (a) in the case where side chain does not have the double bond of free-radical reactive, as Make the ingredient of adhesion coating heat cure and becomes necessary.
In the case that adhesion coating after heat cure is hard and crisp, adhesion coating is in the concave-convex shape for being trapped in wafer surface sometimes It is broken under state, a part (also referred to as residue glue) for adhesion coating is remained in wafer surface.It therefore, can be with so that adhesion after heat cure The mode that elongation becomes larger when the tension failure of layer adjusts additive amount, the function of the acrylic oligomers (d) of 2 functions or more Group's number etc..If adding to volume the acrylic oligomers (d) that functional group number is more, molecular weight is small, may become hard and brittle. On the other hand, if volume add the acrylic oligomers (d) that functional group number is few, molecular weight is big, be used as solidfied material, can It can become soft, solidification is insufficient and the surging and residue glue of adhesion.
As acrylic oligomers (d) more than 2 functions, preferably 6 functions acrylic oligomers below are more excellent It is selected as 3 functions or more, below 5 functions.
The protective film of the present invention is due to requiring heat resistance, in the acrylic oligomers (d) more than 2 functions, Preferably select the acrylic oligomers that heat resistance (is not easy to thermally decompose) high structure.From the aspect of heat resistance, and with ammonia The acrylic oligomers of carbamate key are compared, preferably the acrylic oligomers with ester bond.
In addition, the molecular weight as acrylic oligomers (d), from the aspect of solidification physical property, preferably 200 or more and 10000 hereinafter, more preferably 300 or more and 5000 or less.
As the concrete example of acrylic oligomers (d) more than 2 functions, commercially available urethane acrylates can be enumerated Ester, epoxy acrylate, polyester acrylate, polyether acrylate, pentaerythrite polyacrylate, dipentaerythritol polypropylene Acid esters, ethoxylation isocyanuric acid triacrylate, trimethylolpropane trimethacrylate, double trimethylolpropane tetrapropylene acid Ester etc..
About acrylic oligomers (d) more than 2 functions, there is free radical in side chain in acrylic acid series polymeric compounds (a) It can not be added in the case of reactive double bond, but by addition, to which acrylic oligomers (d) more than 2 functions are made It works for low molecular weight compositions, the adhesion coating before heat cure improves the concave-convex tracing ability of wafer surface, wetability.In addition, If volume using acrylic oligomers (d) more than 2 functions, it is sometimes solid in the case of especially more than the functional group number Adhesion coating after change becomes hard and brittle, and the fracture of above-mentioned adhesion coating occurs.
From the above considerations, the additive amount of acrylic oligomers (d) more than 2 functions is relative to acrylic polymeric 100 mass parts of object (a) are 0 mass parts or more and 100 below mass part, and more than more preferably 0 mass parts 50 below mass part are It is appropriate.
In addition, in acrylic acid series polymeric compounds (a) in the case where side chain does not have the double bond of free-radical reactive, as making The ingredient of adhesion coating heat cure becomes necessary, but if more than 2 functions acrylic oligomers (d) are few, then adhesion coating sometimes Heat cure it is insufficient, remain a part (agglutination destroy) for adhesion coating in wafer surface.In addition, if volume use 2 officials The fracture of above-mentioned adhesion coating then occurs sometimes for acrylic oligomers (d) more than energy.
From the above considerations, by acrylic oligomers (d) more than 2 functions as the addition in the case of necessary Amount is 1 mass parts or more and 100 below mass part, more preferably 20 matter relative to 100 mass parts of acrylic acid series polymeric compounds (a) Measure part more than and 50 it is below mass part be appropriate.
The thickness-of adhesion coating
The thickness of the adhesion coating obtained by the composition comprising above such each ingredient is preferably formed into can be to chip The thickness that the bumps on surface are fully followed.
Specifically, the thickness of adhesion coating be 10 μm or more and 100 μm hereinafter, more preferably 20 μm or more and 50 μm or less It is appropriate.
(polyimide base material)
Polyimide base material in the present invention be from it is following it is such from the aspect of and select.
That is, by base material under heating in vacuum when, if base material softens, bonded with the component of contact, therefore not preferably. Furthermore it is preferred that high elasticity modulus can be maintained at high temperature.
In addition, the semiconductor wafer (silicon wafer) for pasting the protective film of the present invention is thinly processed into 150 μm hereinafter, root It is thinly processed into 100 μm or less according to situation.After such very thin semiconductor wafer and protective film are pasted, heated If, if the coefficient of thermal expansion of the silicon of the linear expansivity and semiconductor wafer of base material substantially deviates, semiconductor wafer is stuck up It is bent.If the warping of semiconductor wafer in the device under heating in vacuum, generation falls off from chip retaining cushion and cannot transport The problem of, chip cracking the problem of.Consider from this point, preferably the coefficient of thermal expansion of base material and the close material of silicon.In addition, such as Due to remaining stress etc. in base material in the manufacturing process of base material and in heating process, base material is heat-shrinked fruit, then is still stuck up It is bent and transporting, become problem in terms of cracking.
In this way, for base material, in terms of at high temperature do not soften, inhibit to examine in terms of the warpage of very thin semiconductor wafer Consider, it is desirable that be difficult to thermally decompose, elasticity modulus when high temperature, coefficient of thermal expansion is maintained not to deviate substantially with semiconductor wafer, heat is received Shrinkage is low etc..
If it is considered that such aspect, then be used as material selection polyimides.
In addition, before the process carried out under heating in vacuum, the drying process of the moisture contained by reduction protective film is carried out. In the drying process, from being easy to from the aspect of protective film is dewatered, as polyimide base material, water steaming is preferably selected The good polyimide base material of the permeability of gas.
If polyimide base material is bonding with the interface of adhesion coating poor, in the stripping of protective film, sticker is residual sometimes It stays in wafer surface and becomes residue glue.
It is therefore preferable that implementing surface treatment (well known discharge treatment (corona, plasma), idol to polyimide base material Join agent processing etc.) or setting adhesive linkage etc., to improve the bonding force of adhesion coating and polyimide base material.
The thickness of polyimide base material be preferably 25 μm or more and 100 μm hereinafter, more preferably 38 μm or more and 50 μm with Under.
If polyimide base material is excessively thin, become prone to introduce fold when pasting sometimes, on the other hand, if mistake Thickness, then the permeability of vapor is deteriorated sometimes, or is deteriorated to the concave-convex tracing ability of semiconductor wafer surface.
As polyimide base material, as long as using commercial polyimide base material.
Specifically, for example, the APICAL (registrations of the Kapton (registered trademark) of Dong Li E.I.Du Pont Company, kaneka companies Trade mark), the UPILEX (registered trademark) etc. of the emerging production in space portion be commercialized, them can be used.
The making-of protective film
Protective film makes as follows.
First, each ingredient for constituting the composition used to obtain adhesion coating is dissolved in solvent, modulates adhesion coating Formation coating fluid.
The adhesion coating formation coating fluid that will be modulated, with thickness corresponding with the thickness of the adhesion coating after drying, with painting Cloth apparatus is coated on polyimide base material, then, is dried to make protective film with drying oven.
Further, it is possible to use following methods are made protective film：By adhesion coating formation coating fluid, with it is viscous after drying The corresponding thickness of thickness for layer, is coated on apparatus for coating on polyimide base material or partition board, then, with kiln dried, Further, coated face is made to be bonded with partition board or polyimide base material, to obtain the structure of partition board/adhesion coating/polyimide base material At laminated body.As long as the protective film of such laminated body before being pasted onto semiconductor wafer, removes partition board.
In addition, in the drying of above-mentioned adhesion coating formation coating fluid, preferably selecting does not make specific hot radical generate The temperature that agent (b) is decomposed, the residence time in drying oven.In addition, in drying, being preferably also contemplated for can be by fully removing solvent Equal volatile ingredients float aspect inhibit the protective film under heating in vacuum, to select the residence time in temperature, drying oven.
Specifically, for example, the temperature in drying process is preferably 60 DEG C or more and 130 DEG C hereinafter, as the residence time, Preferably 1 minute or more and 10 minutes or less.
The applicable purposes-of protective film
Manufacturing method of the protective film of the present invention preferably as the semiconductor device of the process including (1) below~(4) In protective film use.
(1) in the circuit forming face of semiconductor wafer, by the protective film with thermosetting property adhesion coating with the circuit forming face The adhering processes that the mode being in contact with the thermosetting property adhesion coating is pasted；
(2) the above-mentioned semiconductor wafer for having pasted said protection film is carried out in 120 DEG C or more and 180 DEG C temperature below The heating process of heating；
(3) after the heating process of (2), the above-mentioned semiconductor wafer for having pasted said protection film is stood under vacuum Standing operation；And
(4) after the Standing operation of (3), under conditions of vacuum and 200 DEG C or more, in above-mentioned semiconductor wafer The treatment process of any one of metal evaporation, metal sputtering and ion implanting processing is implemented in the non-formation face of circuit.
Here, the process of above-mentioned (1) is corresponding with aftermentioned (A) adhering processes, and the process of above-mentioned (2) adds with aftermentioned (C) Thermal process corresponds to, and the process of above-mentioned (3) is corresponding with aftermentioned (D) Standing operation, the process of above-mentioned (4) and aftermentioned (E) vacuum Treatment process under heating corresponds to.The detailed content of each process due to corresponding (A) adhering processes, (C) heating process, (D) Treatment process under Standing operation and (E) heating in vacuum is same, therefore omits here.
(manufacturing method of semiconductor device)
Next, to having used the manufacturing method of the semiconductor device of the protective film of the present invention to illustrate.
The manufacturing method of the semiconductor device of the present invention is the manufacturing method for the semiconductor device for including following processes：
(A) in the circuit forming face of semiconductor wafer, by the protective film of the present invention with above-mentioned thermosetting property adhesion coating and the electricity The adhering processes that the mode that road forming face is in contact is pasted；
(B) grinding process for being ground the non-formation face of circuit in above-mentioned semiconductor wafer；
(C) said protection film will have been pasted and has been ground the above-mentioned semiconductor wafer in the non-formation face of circuit at 120 DEG C or more And the heating process that 180 DEG C of temperature below are heated；
(D) after the heating process of (C), the above-mentioned semiconductor wafer for having pasted said protection film is stood under vacuum Standing operation；
(E) after the Standing operation of (D), under conditions of vacuum and 200 DEG C or more, to having pasted said protection film The processing of any one of metal evaporation, metal sputtering and ion implanting is implemented in the non-formation face of circuit in above-mentioned semiconductor wafer Treatment process；And
(F) stripping process for removing said protection film from above-mentioned semiconductor wafer.
Hereinafter, being illustrated to each process.
(A) adhering processes-
In (A) adhering processes of the present invention, with the thermosetting property adhesion coating and semiconductor wafer in the protective film of the present invention The mode that is in contact of circuit forming face paste.
Such (A) adhering processes carry out before or after (B) grinding process.
(A) in the case that adhering processes carry out before (B) grinding process, the semiconductor of the protective film of the present invention has been pasted Chip is directly applied for (B) grinding process.
In addition, in the case where (A) adhering processes carry out after (B) grinding process, before (B) grinding process, into The process that row is pasted in such a way that the adhesion coating in well known protective film is in contact with the circuit forming face of semiconductor wafer.This Outside, after carrying out (B) grinding process using the semiconductor wafer for having pasted well known protective film, into being about to well known protective film from half The process of conductor chip stripping.
It is few from process number, it is not necessary that from the aspect of the re-posted for carrying out protective film, preferably (A) adhering processes are ground at (B) It is carried out before cutting process.
The protective film of the present invention is to that in the stickup of semiconductor wafer, can be applicable in well known Belt sticking machine.
In order not to be pasted into air in the bumps of the circuit of wafer surface, it is preferable to use vacuum pastes machine.If into Enter air, then becomes the opportunity of protective film floated in the treatment process that (E) is carried out under heating in vacuum, therefore not preferably.
(B) grinding process-
In (B) grinding process of the present invention, the non-formation face of circuit (chip back surface) in semiconductor wafer is ground.
(B) in grinding process, for example, the semiconductor wafer of the protective film or previous protective film of having pasted the present invention is situated between The scratch diskette etc. of milling drum is fixed on by polyimide base material, to the non-formation face of circuit (chip back surface) in semiconductor wafer It is ground.
After grinding terminates, in the case where semiconductor wafer is pasted with previous protective film, the protective film is removed.
After the completion of the grinding of chip back surface, sometimes to the semiconductor wafer with protection membrane stage, implement chip back surface The etching process process that chemical etching, polishing etc. are carried out by liquid.
In addition, after the completion of the grinding of chip back surface, after implementing etching process process, it can be to having pasted guarantor of the invention The semiconductor wafer of cuticula carries out the preheating for removing the moisture in such protective film.
The protective film of the present invention is made of acrylic acid series sticker and polyimide base material, is all the high material of hydroscopicity. Since grinding process, etching process process are the processes for having used water, the protective film of the present invention becomes the state of moisture absorption.
If the protective film of the state of the moisture absorption heated in (C) heating process, sometimes due to the moisture of moisture absorption It drastically expands and floats.In order to inhibit to float, it is preferable to use baking oven etc., will paste the semiconductor of the protective film of the present invention Chip is in 60 DEG C or more and 100 DEG C or less pre-add heated dryings, several minutes~number 10 minutes.
(C) heating process-
In (C) heating process of the present invention, the protective film of the present invention will be pasted and be ground the non-formation face of circuit Semiconductor wafer is heated in 120 DEG C or more and 180 DEG C of temperature below.In addition, this process can under reduced pressure or add Pressure is implemented, if implemented under reduced pressure, may float due to the generation gas of the decomposition of peroxide, therefore It is preferred that implement at pressures close to atmospheric pressure, from the aspect of it can use general baking oven, more preferably under atmospheric pressure into Row.
Pass through (C) heating process, the adhesion coating heat cure of protective film of the invention.
By (C) heating process, wetting can be prevented, the concave-convex adhesion for following excellent adhesion coating is surging and becomes not It can stripping.
In addition, in order to inhibit the protective film caused by the gas that the decomposition of particular thermal free-radical generating agent (b) generates Float, it is also preferred that the decomposition of particular thermal free-radical generating agent (b) is completed in this process.
From the aspect of such, (C) is as long as the heating condition in heating process is produced according to the specific hot radical used 1 minute half life temperature of agent (b) is given birth to set, for example, can be relative to 1 point of particular thermal free-radical generating agent (b) Clock half life temperature preferably carries out within ± 30 DEG C (within more preferably ± 20 DEG C).
As the condition of (C) heating process, specifically, it is preferable that under atmospheric pressure, at 120 DEG C or more and 180 DEG C or less The temperature of (preferably 130 DEG C or more and 170 DEG C or less), several minutes of progress or more and (be preferably 1 minute~1 small in 1 hour or less When, more preferably 3 minutes~30 minutes, further preferably 5 minutes~30 minutes, particularly preferably 10 minutes~30 minutes) Heating.
Treatment process-under (D) Standing operation and (E) heating in vacuum
In (D) Standing operation of the present invention, after the heating process of (C), by partly leading for the protective film for having pasted the present invention Body chip is stood under vacuum.
In addition, in treatment process under (E) heating in vacuum, after (D) Standing operation, in vacuum and 200 DEG C or more Under the conditions of, metal evaporation, metal sputtering and ion are implemented in the non-formation face of circuit in the semiconductor wafer to having pasted protective film Any one of injection processing.
In treatment process under (E) heating in vacuum, it is applicable in vacuum deposition apparatus when metal evaporation, when metal sputtering is applicable in Sputter equipment is applicable in ion implantation apparatus when ion implanting, these devices are all well known vacuum plants.
For these vacuum plants, it is however generally that, so that semiconductor wafer is statically placed in pre-evacuation chamber, reaches certain journey herein After the vacuum degree (such as 1Pa or less) of degree, semiconductor wafer is moved on into master device.Standing in such pre-evacuation chamber becomes upper (D) Standing operation stated.Then, in master device, the place of metal evaporation, metal sputtering or ion implanting under progress vacuum Reason, the semiconductor wafer in device at this time are heated to 200 DEG C or more.In addition, in treatment process under (E) heating in vacuum Heating/cooling body of type, device that the upper limit of heating is managed according to this etc. determines, specifically 300 DEG C or so.
(F) stripping process-
The present invention (F) stripping process in, after the treatment process under (E) heating in vacuum, by the present invention protective film from Semiconductor wafer is removed.
The operation that the protective film of the present invention is removed from wafer surface is also carried out sometimes through artificial, but in general, It is carried out using the device for being referred to as automatic stripping machine.As such automatic stripping machine, there is the model that takatori (strain) makes： The model of ATRM-2000B, takatori (strain) system：The model of ATRM-2100, empire's essence machine (strain) system：STP series, day east essence The model of machine (strain) system：HR-8500II etc..In addition, removing the present invention from wafer surface as by above-mentioned automatic stripping machine Protective film when the adhesive tape for being referred to as release band that uses, can use for example, the commodity sign of Sumitomo 3M (strain) systems is Fiber band No.897 of Highland etc..
The temperature when protective film of the present invention is removed from wafer surface is usually carried out in 25 DEG C or so of room temperature, but upper In the case that the automatic stripping machine stated has the function of heating chip, it can heat up until defined temperature by semiconductor wafer Protective film is removed in the state of (in general, 40 DEG C~90 DEG C degree).
The wafer surface after the protective film of the present invention has been removed to be washed as needed.As washing methods, can enumerate Dry washings such as the wet scrubbings such as water washing, solvent washing, plasma washing etc..It, can be simultaneously in the case of wet scrubbing Use ultrasonic washing.These washing methods are suitably selected according to the pollution situation of wafer surface.
Include preferably further following such process in the manufacturing method of the semiconductor device of the present invention.
That is, polyimide base material be hard, adhesion coating thickness it is thin in the case of, wafer surface cannot be absorbed sometimes It is concave-convex.In this case, excessively it is ground the protrusion back side when grinding in (B) grinding process sometimes.
From the aspect of preventing the surplus to be ground, using the surface of the polyimide base material in the protective film of the present invention (the non-formation face of adhesion coating) pastes the method for well known grinding semiconductor wafer film.
As the method for pasting grinding semiconductor wafer film, can enumerate：Before (B) grinding process, progress is partly being led Process ((i) work of grinding semiconductor wafer film is pasted on the surface of the polyimide base material for the protective film pasted on body chip Sequence) method；Alternatively, applying the surface of the polyimide base material in protective film to paste semiconductor in advance in (A) adhering processes The method of protective film made of grinding wafer film.
As grinding semiconductor wafer film used herein, preferably comprise absorb wafer surface it is concave-convex it is soft/answer The grinding semiconductor wafer film of power relaxation layer.
In addition, grinding semiconductor wafer is with film preferably after (B) grinding process and before (C) heating process, from this The protection film stripping ((ii) process) of invention.
It is ground in (B) grinding process, the semiconductor wafer of filming is easy to warpage or breakage.Therefore, from inhibition The warpage of the semiconductor wafer of filming, from the aspect of improving intensity, (B) grinding process preferably remains semiconductor wafer In the non-formation face of circuit outer peripheral edge portion, the process that inner peripheral portion is ground.That is, in (B) grinding process, it is preferred to use The outer peripheral edge portion for thickly remaining semiconductor wafer improves intensity, on the other hand, the method that central portion is ground to specific thickness, So-called TAIKO techniques.
Polyimide base material in the protective film of the present invention is not not thermally expand, in addition, nor with silicon wafer Coefficient of thermal expansion is completely the same.Therefore, in situation (such as the further film of semiconductor wafer for requiring tightened up control warpage Change, for high temperature the case where), preferably in the state of being applicable in protective film of the invention, TAIKO techniques as described above are used in combination, Come inhibit semiconductor wafer warpage generation.Transport as a result, caused by warpage is bad etc. to be difficult to happen.
The semiconductor wafer that the manufacturing method of semiconductor device as the present invention can be applicable in, is not limited to silicon wafer, can Enumerate the semiconductor wafers such as gallium nitride, germanium, gallium-arsenic, gallium-phosphorus, gallium-arsenic-aluminium.
Embodiment
Hereinafter, showing embodiment the present invention is further described detailed content.
(modulation of adhesion coating formation coating fluid)
Each ingredient recorded in following table 2 is used and mixed with the use level (being documented in bracket) recorded in table 2 Stirring is closed, modulation adhesion coating, which is formed, uses coating fluid 1~10.
Here, in table 2, use level is the mass parts relative to 100 mass parts of monomer in acrylic acid series polymeric compounds, is solid The mass ratio of body ingredient.
[table 2]
The polymer 1 write a Chinese character in simplified form in table 2 and 2, oligomer 1 and 2, peroxide 1~5, crosslinking agent 1 are following substances.
Polymer 1：By 82 parts of ethyl acrylate, 10 parts of methyl methacrylate, 8 parts of hy-droxybutyl and as poly- 0.5 mass parts of benzoyl peroxide for closing initiator are mixed, and existing while stirring 80 DEG C was added drop-wise to addition through 5 hours and has 65 mass parts of toluene, 50 mass parts of ethyl acetate nitrogen displacement flask in, futher stirring 5 hours makes its reaction, obtains Acrylate copolymer solution.It is set to polymer 1.
Polymer 2：By 48 mass parts of ethyl acrylate, 27 mass parts of acrylic acid-2-ethyl caproite, methyl acrylate 20 Mass parts, 5 mass parts of glycidyl methacrylate and 0.5 mass parts of benzoyl peroxide as polymerization initiator carry out Mixing exists 80 DEG C while stirring and was added drop-wise to the nitrogen for being added and having 65 mass parts of toluene, 50 mass parts of ethyl acetate through 5 hours It replaces in flask, futher stirring 5 hours makes its reaction.After reaction, cooling, be added wherein 25 mass parts of dimethylbenzene, 1.5 mass parts of 2.5 mass parts of acrylic acid and myristyl benzyl ammonium chloride, the 80 DEG C of reactions 10 that exist while being blown into air are small When, obtain the acrylate copolymer solution for being imported with polymerism carbon-to-carbon double bond.It is set to polymer 2.
Oligomer 1：AD-TMP (villages Xin Zhong chemistry system, double trimethylolpropane tetraacrylate)
Oligomer 2：Aronix M-402 (East Asia synthesis system, Dipentaerythritol Pentaacrylate and dipentaerythritol six Acrylate)
Peroxide 1：PERTETRA A (day oil system, 2,2- bis- (4,4- bis--(t-butylperoxy) cyclohexyl) third Alkane, 561,1 minute 154 DEG C of half life temperature of molecular weight)
Peroxidase 12：NYPER BMT (day oil system, 1 minute 131 DEG C of half life temperature)
Peroxide 3：PEROYL TCP (day oil system, 399,1 minute 92 DEG C of half life temperature of molecular weight)
Peroxide 4：(day oil system, tert-butyl cumyl peroxide, molecular weight decline PERBUTYL C for 208,1 minute half 173 DEG C of phase temperature)
Peroxide 5：PERCUMYL P (day oil system, 194,1 minute 233 DEG C of half life temperature of molecular weight)
Crosslinking agent 1：OLESTER P49-75S (Mitsui Chemicals system)
(making of protective film)
On the polyimide film (Dong Li E.I.Du Pont Company Kapton150EN-A) of 38 μ m thicks, become with dry thickness 30 μm of mode is coated with the adhesion coating formation coating fluid recorded in table 2, dry under the conditions of 100 DEG C, 6 minutes, makes and implements The protective film of example 1~4 and comparative example 1~6.
Then, it is cured 7 days at 40 DEG C, crosslinking agent is made to be reacted with acrylic acid series polymeric compounds.
(evaluation of adhesive tape)
After each protective film to be pasted on to the minute surface of 6 inches of silicon wafer, it is heated into (preheating) at 80 DEG C in an oven 10 minutes, then, being heated under conditions of table 2 is recorded made adhesion coating heat cure (comparative example 4,5 does not heat).Then, it will glue The silicon wafer for having pasted protective film is put into after vacuum drying oven places under vacuum, is heated 30 minutes at 250 DEG C.Visual confirmation is being dried Whether there is or not floating for protective film occurs in case.
After heating in vacuum, it is restored to after room temperature and removes protective film from silicon wafer, confirming by visual observation on silicon is The no remaining (residue glue) for having adhesion coating.
Evaluation index is as described below.It shows the result in table 2.
Be clear that by table 2, the protective film of Examples 1 to 4 due to in the present invention by including acrylic polymeric The coating fluid of acrylic oligomers (d) more than object (a), particular thermal free-radical generating agent (b), crosslinking agent (c) and 2 functions obtains Adhesion coating, therefore even if after heat cure for heating in vacuum if do not occur protective film float in addition, if do not generate Residue glue.
(embodiment A~D, comparative example a~f and reference example)
Using the protective film of Examples 1 to 4 and comparative example 1~6, preheated as follows, the heat cure of adhesion coating and true Sky heating.
Embodiment A：After the protective film of embodiment 1 to be pasted on to 6 inches of the minute surface of silicon wafer, it is existed in an oven 80 DEG C are heated (preheating) 10 minutes, are then heated 15 minutes at 150 DEG C with baking oven, are made adhesion coating heat cure.Then, it is thrown Enter to vacuum drying oven after placing under vacuum, is heated 30 minutes at 250 DEG C.
In addition, the heating when heat cure of preheating and adhesion coating carries out under atmospheric pressure.
Embodiment B~D, comparative example a~f and reference example：The protective film used in embodiment A is changed into following Table 3 institute The protective film of record has carried out the heating recorded in following Table 3, in addition to this, is operated in the same manner as embodiment A.
When heating in vacuum in embodiment A~D, comparative example a~f and reference example, whether there is or not generations in baking oven for visual confirmation Protective film floats.
In addition, after heating in vacuum, be restored to after room temperature and remove protective film from silicon wafer, on visual confirmation silicon wafer whether There is the remaining (residue glue) of adhesion coating.
It shows the result in table 3.
[table 3]
It is clear that by table 3, using the protective film of Examples 1 to 4, is preheated, 120 DEG C or more and 180 DEG C or less Temperature adhesion coating heat cure and placement under conditions of vacuum and 200 DEG C or more embodiment A~D in, do not send out Raw protective film floats, in addition, residue glue does not also occur.
It is found that using the protective film of comparative example 1~3, preheated, 120 DEG C or more and 180 DEG C temperature below it is viscous It in comparative example a~c of heat cure and placement under conditions of vacuum and 200 DEG C or more of layer, although not protecting Film floats, but residue glue occurs.
This is because 1 minute half life temperature of hot radical producing agent included in adhesion coating is less than 140 DEG C of (ratios Compared with example 1,2), alternatively, be not used hot radical producing agent (comparative example 3).Speculate declining for 1 minute half due to hot radical producing agent Phase temperature is less than 140 DEG C, therefore decomposes or volatilize in the drying stage hot radical producing agent of adhesion coating, the heat cure of adhesion coating It is insufficient.In addition, thus it is speculated that in the case of unused hot radical producing agent similarly, the heat cure of adhesion coating is insufficient.It pushes away Although surveying as a result, heat cure does not carry out fully, adhesion coating sharp becomes high temperature by heating in vacuum, therefore viscous The property is surging, and residue glue occurs.
Using the protective film of comparative example 4, after preheating, without the heat cure of adhesion coating, and carry out in vacuum and In the comparative example d of placement under conditions of 200 DEG C or more, although residue glue does not occur, floating for protective film occurs.Speculate this It is because being added with the coating fluid of crosslinking agent due to the use of volume, therefore as the adhesion coating of hard, the wetting to silicon wafer Property is low, and the bonding relative to silicon wafer could not be maintained in heating in vacuum.
Using the protective film of comparative example 5, after preheating, without the heat cure of adhesion coating, and carry out in vacuum and In the comparative example e of placement under conditions of 200 DEG C or more, although floating for protective film does not occur, residue glue occurs.Speculate this It is because due to the use of the coating fluid of crosslinking agent is marginally added with, therefore becoming soft adhesion coating, the wetting to silicon wafer Property it is excellent, maintain the bonding of opposite silicon wafer under heating in vacuum, but since for high temperature, adherence is high Rise, residue glue occurs.
According to reference example, it is known that even if using the protective film of embodiment 1, if without the process of heat cure, although Residue glue does not occur, but floating for protective film occurs.Presumption is produced this is because under heating in vacuum with specific hot radical The gas componant of the decomposition of raw agent (peroxide) becomes the inducement for floating generation.
(embodiment E)
The protective film of embodiment 1 is pasted on to the minute surface ((A) adhering processes) of 8 inch silicon wafers (mirror).
Then, using the backgrinder of DISCO corporations, grinding chip back surface is until thickness becomes 100 μm ((B) grinding process).
After grinding, chip does not crack, and warpage is also 1mm or less.
Then, by the chip in an oven in 80 DEG C of dryings (preheating) 10 minutes, further then, at 150 DEG C with baking Case heats 15 minutes and adhesion coating is cured ((C) heating process).In addition, the heating when heat cure of preheating and adhesion coating exists It is carried out under atmospheric pressure.
After adhesion coating is cured, the warpage of chip is 2mm or so, is sticking up with the operable range of conveyer of chip Qu Liang.
Then, which is put into after vacuum drying oven places under vacuum, is heated 30 minutes at 250 DEG C, as a result at this Do not float in the vacuum drying oven of sample.
Then, the chip in the environment of being restored to atmospheric pressure, room temperature is removed the protective film of embodiment 1 from chip, knot Fruit wafer surface has no residue glue.
In the entire disclosure of Japanese publication 2014-074489 filed in 31 days March in 2014 by referring to being incorporated to Into this specification.
About whole documents, patent application and the technical specification recorded in this specification, each document, patent application and skill Art specification by referring to be incorporated to the case where specifically and individually record equally by referring to being incorporated into this specification.

Claims (11)

1. a kind of protective film, is pasted onto the circuit forming face of semiconductor wafer, and has：
Polyimide base material；And
Thermosetting property adhesion coating, the thermosetting property adhesion coating are arranged on a surface of the polyimide base material, and by including third Olefin(e) acid based polymer a, 1 minute half life temperature are 140 DEG C or more and 200 DEG C hot radical producing agent b and crosslinking agent c below Composition obtain,
The protective film is used as following protective films in the manufacturing method of semiconductor device, the manufacture of the semiconductor device Method includes following processes：
(1) in the circuit forming face of semiconductor wafer, the protective film with thermosetting property adhesion coating with the circuit forming face and is somebody's turn to do The adhering processes that the mode that thermosetting property adhesion coating is in contact is pasted；
(2) semiconductor wafer for having pasted the protective film is added what 120 DEG C or more and 180 DEG C temperature below heated Thermal process；
(3) after the heating process of (2), standing that the semiconductor wafer for having pasted the protective film is stood under vacuum Process；And
(4) after the Standing operation of (3), under conditions of vacuum and 200 DEG C or more, to the circuit in the semiconductor wafer The treatment process of any one of metal evaporation, metal sputtering and ion implanting processing is implemented in non-formation face.
2. protective film according to claim 1, the molecular weight of the hot radical producing agent b be 200 or more and 1000 with Under.
3. protective film according to claim 1, the composition further includes the acrylic oligomers of 2 functions or more d。
4. protective film according to claim 2, the composition further includes the acrylic oligomers of 2 functions or more d。
5. according to any one of them protective film of 1~claim 4 of claim, the acrylic acid series polymeric compounds a is in side Chain has the polymer of the double bond of free-radical reactive.
6. a kind of manufacturing method of semiconductor device comprising following processes：
(A) in the circuit forming face of semiconductor wafer, by any one of them protective film of 1~claim 5 of claim with The adhering processes that the mode that the thermosetting property adhesion coating is in contact with the circuit forming face is pasted；
(B) grinding process for being ground the non-formation face of circuit in the semiconductor wafer；
(C) protective film will have been pasted and has been ground the semiconductor wafer in the non-formation face of circuit at 120 DEG C or more and 180 The heating process of temperature heating DEG C below；
(D) after the heating process of (C), standing that the semiconductor wafer for having pasted the protective film is stood under vacuum Process；
(E) after the Standing operation of (D), under conditions of vacuum and 200 DEG C or more, to having pasted described in the protective film The place of any one of metal evaporation, metal sputtering and ion implanting processing is implemented in the non-formation face of circuit in semiconductor wafer Science and engineering sequence；And
(F) stripping process for removing the protective film from the semiconductor wafer.
7. the manufacturing method of semiconductor device according to claim 6, after the adhering processes of (A) and described (B) before grinding process, including following processes：
(i) on the surface of the polyimide base material of the protective film, the process of grinding semiconductor wafer film is pasted.
It is described used in the adhering processes of (A) 8. the manufacturing method of semiconductor device according to claim 6 Protective film is made of the surface mount grinding semiconductor wafer film of the polyimide base material of the protective film.
9. the manufacturing method of semiconductor device according to claim 7, after the grinding process of (B) and described (C) before heating process, including following processes：
(ii) by the grinding semiconductor wafer film from it is described protection film stripping process.
10. the manufacturing method of semiconductor device according to claim 8, after the grinding process of (B) and described (C) before heating process, including following processes：
(ii) by the grinding semiconductor wafer film from it is described protection film stripping process.
11. according to the manufacturing method of any one of them semiconductor device of 6~claim 10 of claim, (B's) Grinding process is the outer peripheral edge portion in the non-formation face of circuit in the residual semiconductor wafer, the work that inner peripheral portion is ground Sequence.
CN201580007736.4A 2014-03-31 2015-03-26 The manufacturing method of the semiconductor device of protective film and the use protective film Active CN105981137B (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2014074489 2014-03-31
JP2014-074489 2014-03-31
PCT/JP2015/059459 WO2015152010A1 (en) 2014-03-31 2015-03-26 Protective film, and production method for semiconductor device using protective film

Publications (2)

Publication Number Publication Date
CN105981137A CN105981137A (en) 2016-09-28
CN105981137B true CN105981137B (en) 2018-08-31

Family

ID=54240336

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201580007736.4A Active CN105981137B (en) 2014-03-31 2015-03-26 The manufacturing method of the semiconductor device of protective film and the use protective film

Country Status (4)

Country Link
JP (1) JP6106332B2 (en)
CN (1) CN105981137B (en)
TW (1) TWI673313B (en)
WO (1) WO2015152010A1 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6632115B2 (en) * 2015-07-17 2020-01-15 藤森工業株式会社 Adhesive resin layer and adhesive resin film
JP2018133505A (en) * 2017-02-17 2018-08-23 株式会社ディスコ Plasma etching method
CN109082241A (en) * 2017-06-13 2018-12-25 麦克赛尔控股株式会社 The laminated body of double-sided adhesive tape and thin film component and bearing part
JP6777233B2 (en) * 2017-07-12 2020-10-28 富士電機株式会社 Manufacturing method of semiconductor devices
WO2020189568A1 (en) * 2019-03-15 2020-09-24 リンテック株式会社 Adhesive sheet and semiconductor device production method
WO2022030604A1 (en) * 2020-08-07 2022-02-10 日東電工株式会社 Protective cover member and member-supplying sheet

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1700411A (en) * 2004-04-28 2005-11-23 三井化学株式会社 Surface protecting film for semiconductor wafer and method of protecting semiconductor wafer using the same
TW201411710A (en) * 2012-08-07 2014-03-16 Sekisui Chemical Co Ltd Processing method for wafer

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011204793A (en) * 2010-03-24 2011-10-13 Sekisui Chem Co Ltd Wafer processing method
JP5348147B2 (en) * 2011-01-11 2013-11-20 信越化学工業株式会社 Temporary adhesive composition and method for producing thin wafer
JP5929035B2 (en) * 2011-08-10 2016-06-01 富士通セミコンダクター株式会社 Substrate transport apparatus, semiconductor manufacturing apparatus, and substrate transport method

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1700411A (en) * 2004-04-28 2005-11-23 三井化学株式会社 Surface protecting film for semiconductor wafer and method of protecting semiconductor wafer using the same
TW201411710A (en) * 2012-08-07 2014-03-16 Sekisui Chemical Co Ltd Processing method for wafer

Also Published As

Publication number Publication date
WO2015152010A1 (en) 2015-10-08
CN105981137A (en) 2016-09-28
JPWO2015152010A1 (en) 2017-04-13
JP6106332B2 (en) 2017-03-29
TW201546148A (en) 2015-12-16
TWI673313B (en) 2019-10-01

Similar Documents

Publication Publication Date Title
CN105981137B (en) The manufacturing method of the semiconductor device of protective film and the use protective film
CN109743877B (en) Adhesive tape for semiconductor processing and method for manufacturing semiconductor device
KR101722137B1 (en) Dicing film and dicing die-bonding film
KR101849785B1 (en) Radiation-curable pressure-sensitive adhesive composition and pressure-sensitive adhesive sheet
KR20100138979A (en) Energy ray-curable polymer, energy ray-curable pressure sensitive adhesive composition, pressure-sensitive adhesive sheet and method of processing semiconductor wafer
TWI803606B (en) Adhesive composition and adhesive tape
TW202016234A (en) Semiconductor processing adhesive tape and method of manufacturing semiconductor device
JP6091955B2 (en) Adhesive sheet, composite sheet for forming protective film, and method for producing chip with protective film
JP7381447B2 (en) Adhesive tape and semiconductor device manufacturing method
TW202020096A (en) Adhesive tape for semiconductor processing and method for producing semiconductor device
JPWO2019181730A1 (en) Manufacturing method of adhesive tape and semiconductor device
TWI566282B (en) Cut the adhesive sheet
JP7381448B2 (en) Adhesive tape and semiconductor device manufacturing method
TW201940625A (en) Adhesive tape for semiconductor fabrication
KR102642081B1 (en) Manufacturing method of adhesive tape and semiconductor device
TWI803605B (en) Adhesive composition and adhesive tape
JP7069116B2 (en) Base material for back grind tape
JP2011233632A (en) Adhesive sheet and method of manufacturing electronic component
JP2012169364A (en) Pickup method of semiconductor chip and manufacturing method of semiconductor device
KR20170109897A (en) Surface protecting adhesive film for semiconductor wafer and the manufacturing method for the same
JPWO2019181401A1 (en) Manufacturing method of adhesive tape and semiconductor device
TW202237779A (en) Semiconductor processing adhesive tape, and method for manufacturing semiconductor device
TW202235577A (en) Workpiece handling sheet, method for manufacturing semiconductor device, and use of workpiece handling sheet
CN116941017A (en) Adhesive tape for semiconductor processing and method for manufacturing semiconductor device
JP5951206B2 (en) Dicing die bonding sheet

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant