CN105978561A - Broadband voltage controlled oscillator - Google Patents
Broadband voltage controlled oscillator Download PDFInfo
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- CN105978561A CN105978561A CN201610427844.3A CN201610427844A CN105978561A CN 105978561 A CN105978561 A CN 105978561A CN 201610427844 A CN201610427844 A CN 201610427844A CN 105978561 A CN105978561 A CN 105978561A
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03L—AUTOMATIC CONTROL, STARTING, SYNCHRONISATION, OR STABILISATION OF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES
- H03L7/00—Automatic control of frequency or phase; Synchronisation
- H03L7/06—Automatic control of frequency or phase; Synchronisation using a reference signal applied to a frequency- or phase-locked loop
- H03L7/08—Details of the phase-locked loop
- H03L7/099—Details of the phase-locked loop concerning mainly the controlled oscillator of the loop
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Abstract
The invention discloses a broadband voltage controlled oscillator, belonging to the technical field of semiconductor integrated circuits. The voltage controlled oscillator comprises an inductor component (1), a capacitor component (2) and a compensation loop (3) in parallel connection, wherein the capacitor component (2) comprises a MOS capacitor cell (21) and a reverse bias diode unit (22); the MOS capacitor cell (21) comprises a plurality of switch capacitor branches connected in parallel and provided with MOS capacitors, and performs on and off control through a digital control bit so as to regulate a capacitance value of the MOS capacitor cell (21), and thus, coarse tuning for output frequency of the voltage controlled oscillator is realized; and when performing bias voltage regulation, the reverse bias diode unit (22) charges or discharges through a PN junction, controls a tuning voltage of the voltage controlled oscillator, and consequently realizes fine tuning for the output frequency of the voltage controlled oscillator. A relatively large frequency tuning range and a low phase noise are realized, meanwhile, gain is reduced and tuning linearity is improved, and thus, loop stability of a phase-locked loop can be guaranteed.
Description
Technical field
The present invention relates to semiconductor integrated circuit technical field, particularly relate to a kind of wideband voltage controlled oscillator.
Background technology
Along with wireless communication technology and the development of IC industry, the transponder chip of compatible multi-protocols becomes
The study hotspot in Current wireless communication field.Frequency synthesizer, as the key modules of radio-frequency front-end, is mainly made
With being the local carrier signal providing programmable frequency to the frequency changer circuit in transceiver.In order to improve frequency spectrum effect
Rate, modern wireless communication systems mostly utilizes frequency multiplexing technique, will be used for transmitting total band of the channel of signal
Width is divided into several sub-bands (or claiming subchannel), each subchannel transmission one road signal.Wireless receipts
The machine of sending out carries out Real-time Channel switching when communicating according to channel occupancy situation, channel quality etc.；Concrete,
The switching of channel is realized by changing the output frequency of frequency synthesizer.
The integrated frequency synthesizer overwhelming majority of main flow is all phase-locked ring type frequency synthesizer at present, phase-locked ring system
Application very extensive of system, from global positioning system to clock recovery circuitry, then to wireless receiver circuit
Etc.；Different applications, the requirement to its performance is different, it is important that its performance
Quality directly influences the quality of communication system.Therefore, at a high speed, low phase noise, low power jitter, low
The PLL frequency synthesizer system of power consumption and low chip area etc. is increasingly becoming the research weight of engineers
Point.
Along with the requirement of phase-locked ring type frequency synthesizer increasingly being trended towards broadband, low phase noise, low miscellaneous
Dissipate, as key modules voltage controlled oscillator (VCO, Voltage in phase-locked ring type frequency synthesizer
Controlled Oscillator), be a kind of be the pulse conversion circuit of corresponding frequencies by level translation, its design
It is also required to meet the requirement that reference frequency output is big, phase noise is low.Current widely used VCO structure
(tuner being i.e. made up of inductance and capacitances in series or parallel connection produces oscillation frequency mainly complementary type LC-VCO
The VCO of rate), PMOS negative resistance to type VCO and NMOS negative resistance to type LC-VCO.It each has
Different pluses and minuses need to carry out compromise according to real needs and select.
Formula (1) is the frequency of oscillation formula of LC tuner:
From above formula (1), when inductance L mono-timing, can obtain different defeated by adjusting electric capacity C
Go out frequency f, and the regulation of electric capacity C capacitance is to be realized by the size changing control voltage Vtune, and
And there is curve linear relationship as shown in Figure 1, i.e. single band VCO with controlling voltage Vtune in output frequency f
Frequency tuning range curve, in Fig. 1, when realizing frequency tuning range fL～fH by single band, its
Gain delta K is represented by:
Wherein, Δ f0 is the upper frequency limit difference (i.e. fH-fL) with lower-frequency limit of frequency range fL～fH, Δ u0
(i.e. u2-u1) is the knots modification of Capacity control voltage when VCO output frequency covering frequence scope fL～fH.
Owing to, generally when the gain of VCO is excessive, cycle of phase-locked loop stability can be deteriorated.Therefore, VCO is being passed through
When realizing broadband, total bandwidth need to be divided into multiple sub-band, and by controlling the gain of each sub-band,
Avoid the high-gain of VCO, as in figure 2 it is shown, when frequency range fL～fH belong to broadband, by it
It is divided into fL～fm1, fm1～fm2, fm2～fm3, fm3～fm4 and five sub-bands of fm4～fH, each
The gain curve of sub-band is respectively L1, L2, L3, L4 and L5, and the gain of each sub-band is the least.
Further, in order to realize wide frequency tuning range by VCO, in prior art, VCO selects
Variable capacitance many employings metal capacitance, and controlled to adjust the capacitance of variable capacitance by control bit, control
The output frequency of VCO processed covers each sub-band successively, and for guaranteeing that whole broadband all covers,
Two sub-bands the most adjacent in each sub-band have certain overlapping region.Although can realize the widest
Tuning range, but bigger with the capacitance rate of change changing metal capacitance controlling voltage so that parton frequency
The gain of band is relatively big, as in figure 2 it is shown, the gain shown in curve L5 is apparently higher than shown in curve L1～L4
Gain, and then cause the entire gain of VCO to become big.Further, in Fig. 2, the gain of every curve is not the most
Identical, as the gain delta f1/ Δ u1 of curve L1 is less than the gain delta f2/ Δ u1 of curve L5, wherein, Δ u1 is
(u4-u3).But, approximately the same by the gain making each sub-band, and then guarantee high linearity of tuning
Degree, to ensure the stability of cycle of phase-locked loop, is a hot research problem of current FS design.
Visible, the gain that there is also VCO when realizing broadband by multiple sub-bands in prior art is big,
The change in gain of each sub-band is very big, linearity of tuning degree is poor, be unfavorable for the asking of stability of cycle of phase-locked loop
Topic.
Summary of the invention
The present invention is directed to present in prior art, the VCO when realizing broadband by multiple sub-bands
Gain change in gain big, each sub-band very big, linearity of tuning degree is poor, be unfavorable for cycle of phase-locked loop
The problem of stability, it is provided that a kind of wideband voltage controlled oscillator, both can guarantee that bigger frequency tuning range and
Low phase noise, can reduce again the gain of voltage controlled oscillator and arrange raising by suitable capacitance parameter
Linearity of tuning degree, thus ensure cycle of phase-locked loop stability.
The invention provides a kind of wideband voltage controlled oscillator, including the Inductive component being connected in parallel, capacitance component
With compensation loop, described capacitance component includes mos capacitance unit and back biased diode unit；
Described mos capacitance unit includes a plurality of parallel connection and is provided with the switching capacity branch road of mos capacitance,
The switching capacity branch road of described a plurality of parallel connection carries out cut-offfing control by digital control position, to adjust described MOS
The capacitance of capacitor cell, it is achieved the coarse adjustment to the output frequency of described voltage controlled oscillator, and by described voltage-controlled
The broadband that agitator need to export is divided into multiple narrow-band and exports；
Described back biased diode unit is when bias voltage adjusts, by PN junction charge or discharge, to described
The VT of voltage controlled oscillator is controlled, and then realizes the thin of the output frequency to described voltage controlled oscillator
Adjust.
Optionally, either switch capacitive branch includes the mos capacitance that two capacitances are equal.
Optionally, described mos capacitance uses inverse metal oxide semiconductor variable capacitance pipe.
Optionally, the way phase of the figure place of described digital control position and described a plurality of switching capacity branch road in parallel
Deng.
Optionally, described mos capacitance is specially N-type MOS capacitor.
Optionally, when under the control in described digital control position, in the switching capacity branch road of described a plurality of parallel connection
Capacitance is opened in switching capacity branch road output in the conduction state；In the switching capacity branch road of described a plurality of parallel connection
The capacitance of opening of two the most adjacent switching capacity branch roads differs twice.
Optionally, when under the control in described digital control position, in the switching capacity branch road of described a plurality of parallel connection
It is off state of switch capacitive branch output power-off capacitance；In the switching capacity branch road of described a plurality of parallel connection
The power-off capacitance difference twice of two the most adjacent switching capacity branch roads.
Optionally, described back biased diode unit includes: the first diode, the first electric capacity, the first resistance,
Second diode, the second electric capacity and the second resistance；
One end of described first electric capacity is connected with described Inductive component and described compensation loop respectively, the other end divides
It is not connected with one end of the anode of described first diode and described first resistance, another of described first resistance
End ground connection, the negative electrode of described first diode is connected with the negative electrode of described second diode；
One end of described second electric capacity is connected with described Inductive component and described compensation loop respectively, the other end divides
It is not connected with one end of the anode of described second diode and described second resistance, another of described second resistance
End ground connection.
The one or more technical schemes provided in the present invention, at least have the following technical effect that or advantage:
Due in the present invention, wideband voltage controlled oscillator, including the Inductive component being connected in parallel, capacitance component
With compensation loop, described capacitance component includes mos capacitance unit and back biased diode unit；Described MOS
Capacitor cell includes a plurality of parallel connection and is provided with the switching capacity branch road of mos capacitance, described a plurality of parallel connection
Switching capacity branch road carries out cut-offfing control by digital control position, to adjust the electricity of described mos capacitance unit
Capacitance, it is achieved the coarse adjustment to the output frequency of described voltage controlled oscillator, and described voltage controlled oscillator is needed output
Broadband be divided into multiple narrow-band and export；Described back biased diode unit adjusts at bias voltage
Time, by PN junction charge or discharge, the VT of described voltage controlled oscillator is controlled, Jin Ershi
The now fine tuning to the output frequency of described voltage controlled oscillator.Efficiently solve present in prior art, when
When realizing broadband by multiple sub-bands the gain of VCO change in gain big, each sub-band very big,
Linearity of tuning degree is poor, be unfavorable for the problem of the stability of cycle of phase-locked loop, both can guarantee that bigger frequency tuning
Scope and low phase noise, can be reduced again the gain of voltage controlled oscillator and be set by suitable capacitance parameter
Put raising linearity of tuning degree, thus ensure cycle of phase-locked loop stability.
Accompanying drawing explanation
In order to be illustrated more clearly that the embodiment of the present invention or technical scheme of the prior art, below will be to enforcement
In example or description of the prior art, the required accompanying drawing used is briefly described, it should be apparent that, describe below
In accompanying drawing be only embodiments of the invention, for those of ordinary skill in the art, do not paying wound
On the premise of the property made work, it is also possible to obtain other accompanying drawing according to the accompanying drawing provided.
The frequency tuning curves schematic diagram of a kind of voltage controlled oscillator that Fig. 1 provides for background of invention；
The frequency tuning curves schematic diagram of the another kind of voltage controlled oscillator that Fig. 2 provides for background of invention；
The structural representation of a kind of wideband voltage controlled oscillator that Fig. 3 provides for the embodiment of the present invention；
The circuit theory diagrams of a kind of nmos type wideband voltage controlled oscillator that Fig. 4 provides for the embodiment of the present invention；
The circuit theory diagrams of a kind of complementary type wideband voltage controlled oscillator that Fig. 5 provides for the embodiment of the present invention.
Detailed description of the invention
The embodiment of the present invention, by providing a kind of wideband voltage controlled oscillator, solves in prior art when by many
Individual sub-band realizes that the change in gain big, each sub-band of the gain of VCO during broadband is very big, tuning
Poor linearity, the problem of the stability of cycle of phase-locked loop of being unfavorable for, both can guarantee that bigger frequency tuning range
With low phase noise, the gain of voltage controlled oscillator can be reduced again and carried by the setting of suitable capacitance parameter
The high tuning linearity, thus ensure cycle of phase-locked loop stability.
The technical scheme of the embodiment of the present invention is for solving above-mentioned technical problem, and general thought is as follows:
Embodiments provide a kind of wideband voltage controlled oscillator, including the Inductive component being connected in parallel, electricity
Holding assembly and compensate loop, described capacitance component includes mos capacitance unit and back biased diode unit；Institute
State mos capacitance unit include a plurality of parallel connection and be provided with the switching capacity branch road of mos capacitance, described many
The switching capacity branch road of bar parallel connection carries out cut-offfing control by digital control position, to adjust described mos capacitance
The capacitance of unit, it is achieved the coarse adjustment to the output frequency of described voltage controlled oscillator, and by described VCO
The broadband that device need to export is divided into multiple narrow-band and exports；Described back biased diode unit is in biased electrical
When pressure adjusts, by PN junction charge or discharge, the VT of described voltage controlled oscillator is controlled,
And then realize the fine tuning of the output frequency to described voltage controlled oscillator.
Visible, in embodiments of the present invention, for the pass in LC voltage controlled oscillator (LC-VCO)
Key section capacitance component, it is provided that one does not use metal capacitance, only with mos capacitance and reverse-biased two
The capacitor combination method of pole pipe electric capacity, the most both can guarantee that bigger frequency tuning range and low phase place were made an uproar
Sound, can reduce again the gain of voltage controlled oscillator and arrange raising linearity of tuning by suitable capacitance parameter
Degree, thus ensure cycle of phase-locked loop stability.
In order to be better understood from technique scheme, below in conjunction with Figure of description and concrete embodiment party
Technique scheme is described in detail by formula, it should be understood that the tool in the embodiment of the present invention and embodiment
Body characteristics is to describe technical scheme in detail rather than restriction to technical scheme,
In the case of not conflicting, the technical characteristic in the embodiment of the present invention and embodiment can be mutually combined.
Refer to Fig. 3, embodiments provide a kind of wideband voltage controlled oscillator, including be connected in parallel
Inductive component 1, capacitance component 2 and compensation loop 3, capacitance component 2 includes mos capacitance unit 21 He
Back biased diode unit 22；
Mos capacitance unit 21 includes that N bar is in parallel and is provided with the switching capacity branch road of mos capacitance
(211～21N), wherein, N is natural number；The switching capacity branch road (211～21N) of a plurality of parallel connection passes through
Digital control position carries out cut-offfing control, to adjust the capacitance of mos capacitance unit 21, it is achieved to described pressure
The coarse adjustment of the output frequency of controlled oscillator, and the broadband that described voltage controlled oscillator need to export is divided into multiple
Narrow-band exports；
Back biased diode unit 22 is when bias voltage adjusts, by PN junction charge or discharge, to described pressure
The VT of controlled oscillator is controlled, and then realizes the thin of the output frequency to described voltage controlled oscillator
Adjust.
In the present embodiment, voltage controlled oscillator based on negative impedance model, specially cross-couplings LC agitator.
Only considering the real part of impedance, the impedance of active device end is:Wherein, α is design ginseng
Number, it is contemplated that its value of the change of supply voltage and temperature is sufficiently large (typically larger than 1).RPReturn for resonance
The parallel equivalent resistance on road.gmTypically it is taken as5～6 times between such that it is able to ensure voltage controlled oscillator
Starting condition for oscillation.
In specific implementation process, as shown in Figure 4, compensate loop 3 and can only pass through a pair NMOS negative resistance
Pipe (M1, M2) realizes, as it is shown in figure 5, compensate loop 3 also can pass through a pair PMOS dynatron
(M3, M4) and a pair NMOS dynatron (M5, M6) realize.Phase place according to agitator is made an uproar
The most famous in acoustic model is that Leeson model understands: phase noise is flat with the output voltage swing of agitator
Side is in inverse ratio.A pair NMOS dynatron and a pair PMOS dynatron are used for described compensation loop
VCO (i.e. complementary type VCO), when bias current increases, signal swing is restricted, and compensates loop
3 use the VCO (i.e. nmos type VCO) of a pair NMOS dynatron to have bigger signal swing,
So, it is however generally that, complementary type VCO is compared nmos type VCO and is had worse phase noise.With
Time nmos type introduce lower negative resistance to parasitic capacitance, high frequency can be alleviated and limit.Therefore, can basis
Actual application needs, and compensates loop 3 and preferably uses a pair NMOS dynatron to realize.
In specific implementation process, referring still to Fig. 4 and Fig. 5, either switch capacitive branch includes two appearances
It is worth equal mos capacitance；Article 1, switching capacity branch road 211 includes two mos capacitance C1, the 2nd
Bar switching capacity branch road 212 includes two mos capacitance C2 ..., the N bar switching capacity branch road 21N bag
Include two mos capacitance Cn.The figure place of described digital control position and described a plurality of switching capacity branch road in parallel
Way equal, concrete, digital control position (code_1, code_2 ..., code_n) for one_to_one corresponding
Control conducting and the shutoff of N bar switching capacity branch road (211～21N).Further, when in described numeral control
Under the control of position processed, switching capacity branch road in the conduction state in the switching capacity branch road of described a plurality of parallel connection
Capacitance is opened in output, two switching capacity branch roads the most adjacent in the switching capacity branch road of described a plurality of parallel connection
Open capacitance difference twice；When under the control in described digital control position, the switching capacity of described a plurality of parallel connection
Branch road is off state of switch capacitive branch output power-off capacitance, the switching capacity of described a plurality of parallel connection
The power-off capacitance difference twice of two switching capacity branch roads the most adjacent in branch road.When mos capacitance C1's
Open, power-off capacitance is when being respectively a, b, and the opening of mos capacitance Ci, power-off capacitance is respectively (a*2i-1)、
(b*2i-1), wherein, i rounds in interval 2～N.
Such as, mos capacitance unit 21 includes 6 parallel connections and is provided with the switching capacity of mos capacitance and props up
Road (211～216), the 1st article of switching capacity branch road includes two the first mos capacitance C1, the 2nd article of switch
Capacitive branch includes that two the second mos capacitance C2 ..., the 6th article of switching capacity branch road include two the 6th
Mos capacitance C6.Set the capacitance of the first mos capacitance C1 as (10～20) pF, then the 2nd MOS
The capacitance of electric capacity C2 is (20～40) pF, the capacitance of the 3rd mos capacitance C3 is (40～80) pF ...,
The capacitance of the 6th mos capacitance C6 is (320～640) pF.When the 1st article of switching capacity branch road is off
During state, the power-off capacitance that capacitance is 10pF of the first mos capacitance C1, when the 1st article of switching capacity props up
When road is in the conduction state, the capacitance of the first mos capacitance C1 be 20pF open capacitance；When the 2nd article
When switching capacity branch road is off state, the power-off capacitance that capacitance is 20pF of the second mos capacitance C2
(being the twice of the power-off capacitance of the first mos capacitance C1), when the 2nd article of switching capacity branch road is on
During state, the capacitance of the second mos capacitance C2 be the capacitance of opening of 40pF (be the first mos capacitance C1
The twice opening capacitance)；...；When the 6th article of switching capacity branch road is off state, the 6th MOS
The capacitance of electric capacity C6 is the power-off capacitance of 320pF, when the 6th article of switching capacity branch road is in the conduction state,
The capacitance of the 6th mos capacitance C6 be 640pF open capacitance.
Corresponding, described digital control position has six, controls 6 parallel connections for one_to_one corresponding and is provided with
The conducting of the switching capacity branch road (211～216) of mos capacitance and shutoff.Described digital control position is six
Binary number, wherein, when control bit is binary one, controls corresponding switching capacity branch road conducting,
When control bit is binary zero, controls corresponding switching capacity branch road and turn off.Such as, described numeral control
3rd (from high to low) of position processed " 011011 " is for controlling conducting or the pass of the 3rd article of switching capacity branch road
Disconnected, the 3rd of described digital control position is " 1 ", controls the 3rd article of switching capacity branch road conducting, so that the 3rd
The capacitance of bar switching capacity branch road is 160pF.In other embodiments, when described digital control position
3rd when being " 0 ", controls the 3rd article of switching capacity branch road and turns off, so that the 3rd article of switching capacity branch road
Capacitance is 80pF.In a word, in specific implementation process, digital control position generation module can be as required
Export different digital control positions, export different capacitances, by VCO controlling mos capacitance unit 21
Output frequency be divided into multiple frequency band, so that the tuning bandwidth of each frequency band reduces, and with MOS
Electric capacity makees switched capacitor array, and the rate of change of capacitance of mos capacitance unit 21 is less.
In specific implementation process, described mos capacitance uses inverse metal oxide semiconductor variable capacitance pipe
(I-MOS, Inversion-mode MOS varactor).PMOS capacitance tube or NMOS capacitor can be passed through
Pipe forms I-MOS.On the one hand, owing to nmos device has more high conductance relative to PMOS device,
Identical mutual conductance g is being providedmTime nmos device smaller, so NMOS structure compare PMOS knot
Structure has less parasitic capacitance, adds the tuning range of VCO, reduces the gate-source electricity of device simultaneously
Hold the grid current noise source caused, therefore, if tuning range and current noise are had relatively strict requirements,
Preferably NMOS capacitor pipe forms I-MOS, so that the dead resistance of mos capacitance is lower so that adjust
Humorous scope is bigger, power consumption is lower, high frequency deviation time there is lower phase noise；Further, body ground connection is utilized
Nmos device make varactor and can obtain high quality factor and more preferable capacitance range thus have more
Good phase noise.On the other hand, the flicker noise of PMOS device is significantly lower than nmos device, institute
Near-end phase noise performance with PMOS structure LC-VCO is preferable, therefore, if to near-end phase noise
Performance has higher requirement, and preferable PMOS electric capacity forms I-MOS.
In specific implementation process, back biased diode unit 22 includes at least one diode, and diode is
One PN junction formed by P-type semiconductor and N-type semiconductor, the depletion width of PN junction is biased electrical
The function of pressure.Under the conditions of reverse bias, when bias increases, depletion layer is by broadening, the quantity of space charge
Increase；When bias reduces, depletion layer will narrow, and the quantity of space charge reduces.Space charge is fixing
Motionless, increasing actually along with the increase of reverse bias of space charge, border, space-charge region has one
Divide electronics and hole to be drawn out of, thus expose the donor ion and acceptor more not having electronics and hole to neutralize
Ion.The reduction of space-charge region is then as the reduction of reverse bias, has electronics and hole Injection Space electric charge
District has neutralized part donor ion and acceptor ion.Visible, under bias, PN junction (the most reverse-biased two
Pole is managed) there is the electric capacity effect of discharge and recharge.Back biased diode is as continuous tuning varactor, and its advantage is line
Property good, with control voltage consecutive variations.
In specific implementation process, referring still to Fig. 4 or Fig. 5, back biased diode unit 22 includes: first
Diode D10, the first electric capacity C10, the first resistance R10, the second diode D20, the second electric capacity C20
With the second resistance R20；One end of first electric capacity C10 respectively with Inductive component 1 and compensate loop 3 be connected,
The other end is connected with the anode of the first diode D10 and one end of the first resistance R10 respectively, the first resistance
The other end ground connection of R10, the negative electrode of the first diode D10 and the negative electrode of the second diode D20 are connected；
One end of second electric capacity C20 respectively with Inductive component 1 and compensate that loop 3 is connected, the other end is respectively with second
The anode of diode D20 and one end of the second resistance R20 connect, the other end ground connection of the second resistance R20.
Wherein, the first resistance R10 and the second resistance R20 is used for dividing potential drop, shunting, the first electric capacity C10 and second
Electric capacity C20, for stopping direct current, filtering and voltage stabilizing, prevents diode positively biased.
Sum it up, the capacitance component that present invention is generally directed in existing widely used VCO, use MOS
Electric capacity is made switching capacity and is carried out output frequency coarse adjustment by digital control position, uses back biased diode to make varactor
Be tuned the fine setting of voltage-controlled output frequency, traditional employing metal capacitance is caused VCO gain big,
The shortcoming of linearity of tuning degree difference improves.Achieve and can reach required in the range of inductance allows
Frequency tuning range, and VCO gain can be the lowest, and by rationally arranging switching capacity and varactor
Parameter can improve the linearity of tuning degree of VCO, make VCO gain change little.Be conducive to cycle of phase-locked loop
Stability, power consumption and phase place can be kept while realizing low tuning gain, high linearity of tuning degree
Noiseproof feature.
Although preferred embodiments of the present invention have been described, but those skilled in the art once know base
This creativeness concept, then can make other change and amendment to these embodiments.So, appended right is wanted
Ask and be intended to be construed to include preferred embodiment and fall into all changes and the amendment of the scope of the invention.
Obviously, those skilled in the art can carry out various change and modification without deviating from this to the present invention
Bright spirit and scope.So, if the present invention these amendment and modification belong to the claims in the present invention and
Within the scope of its equivalent technologies, then the present invention is also intended to comprise these change and modification.
Claims (8)
1. a wideband voltage controlled oscillator, including the Inductive component (1) being connected in parallel, capacitance component (2)
With compensation loop (3), it is characterised in that described capacitance component (2) includes mos capacitance unit (21)
With back biased diode unit (22)；
Described mos capacitance unit (21) includes a plurality of parallel connection and is provided with the switching capacity of mos capacitance
Branch road, the switching capacity branch road of described a plurality of parallel connection carries out cut-offfing control, to adjust by digital control position
State the capacitance of mos capacitance unit (21), it is achieved the coarse adjustment to the output frequency of described voltage controlled oscillator,
And the broadband that described voltage controlled oscillator need to export is divided into multiple narrow-band exports；
Described back biased diode unit (22) is when bias voltage adjusts, by PN junction charge or discharge,
The VT of described voltage controlled oscillator is controlled, and then realizes the frequency of the output to described voltage controlled oscillator
The fine tuning of rate.
2. wideband voltage controlled oscillator as claimed in claim 1, it is characterised in that either switch electric capacity props up
Road includes the mos capacitance that two capacitances are equal.
3. wideband voltage controlled oscillator as claimed in claim 1, it is characterised in that described mos capacitance is adopted
With inverse metal oxide semiconductor variable capacitance pipe.
4. wideband voltage controlled oscillator as claimed in claim 1, it is characterised in that described digital control position
Figure place equal with the way of the switching capacity branch road of described a plurality of parallel connection.
5. wideband voltage controlled oscillator as claimed in claim 1, it is characterised in that described mos capacitance has
Body is N-type MOS capacitor.
6. wideband voltage controlled oscillator as claimed in claim 1, it is characterised in that when in described numeral control
Under the control of position processed, switching capacity branch road in the conduction state in the switching capacity branch road of described a plurality of parallel connection
Capacitance is opened in output；Two switching capacity branch roads the most adjacent in the switching capacity branch road of described a plurality of parallel connection
Open capacitance difference twice.
7. wideband voltage controlled oscillator as claimed in claim 1, it is characterised in that when in described numeral control
Under the control of position processed, the switching capacity branch road of described a plurality of parallel connection is off state of switch capacitive branch
Output power-off capacitance；Two switching capacity branch roads the most adjacent in the switching capacity branch road of described a plurality of parallel connection
Power-off capacitance difference twice.
8. wideband voltage controlled oscillator as claimed in claim 1, it is characterised in that described back biased diode
Unit (22) including: the first diode (D10), the first electric capacity (C10), the first resistance (R10),
Second diode (D20), the second electric capacity (C20) and the second resistance (R20)；
One end of described first electric capacity (C10) respectively with described Inductive component (1) and described compensation loop (3)
Be connected, the other end respectively with anode and described first resistance (R10) of described first diode (D10)
One end connect, the other end ground connection of described first resistance (R10), described first diode (D10)
Negative electrode be connected with the negative electrode of described second diode (D20)；
One end of described second electric capacity (C20) respectively with described Inductive component (1) and described compensation loop (3)
Be connected, the other end respectively with anode and described second resistance (R20) of described second diode (D20)
One end connect, the other end ground connection of described second resistance (R20).
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107623492A (en) * | 2017-10-31 | 2018-01-23 | 广西师范大学 | A kind of high-frequency wideband voltage controlled oscillator and its operation method |
| CN110277979A (en) * | 2018-03-15 | 2019-09-24 | 武汉芯泰科技有限公司 | A kind of high-performance voltage controlled oscillator |
| CN110277991A (en) * | 2018-03-15 | 2019-09-24 | 武汉芯泰科技有限公司 | A kind of wideband voltage controlled oscillator for supporting low gain to change |
| CN111123671A (en) * | 2018-11-01 | 2020-05-08 | 联想图像（天津）科技有限公司 | Frequency conversion circuit, exposure device and printer |
| CN112152331A (en) * | 2020-10-30 | 2020-12-29 | 河北工业大学 | Wireless electric energy transmission device for realizing frequency tuning by using varactor |
| CN113364454A (en) * | 2020-03-04 | 2021-09-07 | 川土微电子(深圳)有限公司 | Voltage controlled oscillator |
| CN115276564A (en) * | 2022-07-30 | 2022-11-01 | 上海锐星微电子科技有限公司 | Voltage-controlled oscillation circuit, voltage-controlled oscillation method and chip for optimizing linearity |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1832333A (en) * | 2006-04-14 | 2006-09-13 | 清华大学 | CMOS digital control LC oscillator on chip |
| CN101174834A (en) * | 2007-10-23 | 2008-05-07 | 无锡汉柏信息技术有限公司 | Gain linearization method based on synchronous compensation of voltage controlled oscillator |
| CN101483434A (en) * | 2008-01-11 | 2009-07-15 | 上海锐协微电子科技有限公司 | Voltage control oscillator with low tuning gain variance |
| CN103023431A (en) * | 2012-09-14 | 2013-04-03 | 深圳先进技术研究院 | Method for enlarging tuning range and improving phase noise performance of voltage-controlled oscillator |
| CN205754277U (en) * | 2016-06-16 | 2016-11-30 | 武汉芯泰科技有限公司 | A kind of wideband voltage controlled oscillator |
-
2016
- 2016-06-16 CN CN201610427844.3A patent/CN105978561A/en not_active Withdrawn
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1832333A (en) * | 2006-04-14 | 2006-09-13 | 清华大学 | CMOS digital control LC oscillator on chip |
| CN101174834A (en) * | 2007-10-23 | 2008-05-07 | 无锡汉柏信息技术有限公司 | Gain linearization method based on synchronous compensation of voltage controlled oscillator |
| CN101483434A (en) * | 2008-01-11 | 2009-07-15 | 上海锐协微电子科技有限公司 | Voltage control oscillator with low tuning gain variance |
| CN103023431A (en) * | 2012-09-14 | 2013-04-03 | 深圳先进技术研究院 | Method for enlarging tuning range and improving phase noise performance of voltage-controlled oscillator |
| CN205754277U (en) * | 2016-06-16 | 2016-11-30 | 武汉芯泰科技有限公司 | A kind of wideband voltage controlled oscillator |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107623492A (en) * | 2017-10-31 | 2018-01-23 | 广西师范大学 | A kind of high-frequency wideband voltage controlled oscillator and its operation method |
| CN110277979A (en) * | 2018-03-15 | 2019-09-24 | 武汉芯泰科技有限公司 | A kind of high-performance voltage controlled oscillator |
| CN110277991A (en) * | 2018-03-15 | 2019-09-24 | 武汉芯泰科技有限公司 | A kind of wideband voltage controlled oscillator for supporting low gain to change |
| CN111123671A (en) * | 2018-11-01 | 2020-05-08 | 联想图像（天津）科技有限公司 | Frequency conversion circuit, exposure device and printer |
| CN113364454A (en) * | 2020-03-04 | 2021-09-07 | 川土微电子(深圳)有限公司 | Voltage controlled oscillator |
| CN112152331A (en) * | 2020-10-30 | 2020-12-29 | 河北工业大学 | Wireless electric energy transmission device for realizing frequency tuning by using varactor |
| CN115276564A (en) * | 2022-07-30 | 2022-11-01 | 上海锐星微电子科技有限公司 | Voltage-controlled oscillation circuit, voltage-controlled oscillation method and chip for optimizing linearity |
| CN115276564B (en) * | 2022-07-30 | 2023-03-21 | 上海锐星微电子科技有限公司 | Voltage-controlled oscillation circuit, voltage-controlled oscillation method and chip for optimizing linearity |
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Application publication date: 20160928 |