CN105974698B

CN105974698B - Active element array substrate

Info

Publication number: CN105974698B
Application number: CN201610409976.3A
Authority: CN
Inventors: 曾胜煊; 纪志贤; 李美慧; 黄圣硕
Original assignee: AU Optronics Corp
Current assignee: AU Optronics Corp
Priority date: 2016-03-31
Filing date: 2016-06-12
Publication date: 2019-05-03
Anticipated expiration: 2036-06-12
Also published as: TW201734610A; CN105974698A; TWI566023B

Abstract

The invention discloses an active component array substrate which comprises a substrate, a plurality of scanning lines, a plurality of data lines, a first pixel structure, a second pixel structure, a first color filter pattern and a second color filter pattern. The scanning lines and the data lines are positioned on the substrate, wherein the scanning lines extend along a first direction. The first and second pixel structures are located on the substrate and are arranged adjacently along a first direction, wherein the first and second pixel structures are respectively electrically connected with one of the scanning lines and one of the data lines. The first and second color filter patterns are disposed on the substrate and respectively correspond to the first and second pixel structures, wherein the first color filter pattern includes a first hole surrounded by a portion of the first color filter pattern and the first covering portion, and the first covering portion is adjacent to the second color filter pattern.

Description

Active component array base board

Technical field

Belong to color filter patterns the present invention relates to a kind of active component array base board more particularly to one kind to be configured at actively The active component array base board of (Color filter on Array, COA) on element arrays.

Background technique

With the development of liquid crystal display panel, high-res have become one of primary demand.In particular, in order to obtain height Resolution, it is necessary to more pixels are laid out under same area, therefore Pixel Dimensions are smaller and smaller.

In recent years, industry, which is proposed, is integrated on active cell array (Color Filter on for color filter patterns Array, COA) technology.Since color filter patterns are directly formed on active cell array, thus color filter patterns with Aligning accuracy between dot structure is not limited by the process capability for organizing vertical COA substrate and opposite substrate, and COA technology is suitble to whereby For manufacturing the display panel of high-res.

In general, color filter patterns need to be arranged multiple closed holes in COA substrate, so that being located at coloured silk Pixel electrode above color filter pattern can electrically be connected by the opening with the membrane transistor below color filter patterns It connects.However, need to keep certain specification distance between above-mentioned opening, therefore by the way that the size reduction of pixel to be reached to high parsing In the case where degree, not only the layout of dot structure is restricted, and is also easy to cause the aperture opening ratio of display panel low.

Summary of the invention

The present invention provides a kind of active component array base board, with good space utilization rate, aperture opening ratio and reliability.

Active component array base board of the invention includes substrate, multi-strip scanning line, the first dot structure of multiple data lines, Two dot structures, the first color filter patterns and the second color filter patterns.Scan line and data line bit on substrate, wherein Every scan line extends in a first direction, and each data line extends in a second direction, and first direction and second direction are staggered. First dot structure is located on substrate with the second dot structure and is disposed adjacent along first direction, wherein the first dot structure and Two dot structures are electrically connected with one of one of scan line and data line respectively, and the first dot structure includes First active member and the first pixel electrode, and the second dot structure includes the second active member and the second pixel electrode. First color filter patterns and the second color filter patterns are located on substrate and respectively correspond the first dot structure and the second pixel Structure setting, wherein the first color filter patterns include the first hole, and the first hole is by the first color filter patterns of part And first covering part jointly around forming, and the first covering part and the second color filter patterns are adjacent.

It include by part by the first color filter patterns in active component array base board of the invention based on above-mentioned First color filter patterns and the covering part hole made of jointly, and the covering part be with the first colorized optical filtering figure The second color filter patterns that case is disposed adjacent are adjacent so that active component array base board can have good space utilization rate, Aperture opening ratio and reliability, and can be applied on high-res product.

To make the foregoing features and advantages of the present invention clearer and more comprehensible, embodiment is cited below particularly, and cooperates appended attached Figure is described in detail below.

Detailed description of the invention

Fig. 1 is the upper schematic diagram according to the active component array base board of an embodiment of the present invention.

Fig. 2 is the upper schematic diagram of the chromatic filter layer in the active component array base board of Fig. 1.

Fig. 3 is the diagrammatic cross-section of the hatching line A-A ' in Fig. 1.

Fig. 4 is the diagrammatic cross-section of the hatching line B-B ' in Fig. 1.

Fig. 5 to Figure 21 is the upper of the chromatic filter layer in the active component array base board of another embodiment of the present invention respectively Depending on schematic diagram.

Wherein, the reference numerals are as follows:

10 active component array base boards

100 substrates

The side 110a

The side 110b

The side 112a

The side 112b

120 sides

The side 122a

The side 122b

The side 130a

The side 130b

The side 132a

The side 132b

The side 142a

The side 142b

The side 152a

The side 152b

160 sides

The side 162a

The side 162b

The side 222a

The side 222b

The side 252a

The side 252b

The side 322a

The side 322b

CF1~CF7 color filter patterns

CFL~18CFL chromatic filter layer

CH1~CH4 channel layer

CP1 covering part

CP2 covering part

2CP2 covering part

3CP2 covering part

CP3 covering part

CP4 covering part

CP5 covering part

2CP5 covering part

CP6 covering part

D1 first direction

D2 second direction

DE1~DE4 drain electrode

DL1~DL5 data line

GE1~GE4 grid

GI lock insulating layer

H1~H4 contact hole

P1~P4 dot structure

PE1~PE4 pixel electrode

PV1 insulating layer

PV2 insulating layer

Q curved profile

SE1~SE4 source electrode

SL1~SL2 scan line

T1~T4 active member

U width

U distance

V hole

3V hole

12V hole

W hole

2W hole

3W hole

11W hole

12W hole

X hole

3X hole

10X hole

12X hole

Y hole

2Y hole

3Y hole

12Y hole

Z hole

11Z hole

Specific embodiment

Fig. 1 is according to the upper schematic diagram of the active component array base board of an embodiment of the present invention, and wherein Fig. 1 omission is drawn Show part film layer.Fig. 2 is the upper schematic diagram of the chromatic filter layer in the active component array base board of Fig. 1.Fig. 3 is in Fig. 1 The diagrammatic cross-section of hatching line A-A '.Fig. 4 is the diagrammatic cross-section of the hatching line B-B ' in Fig. 1.

Referring to Fig. 1 to Fig. 4, active component array base board 10 include substrate 100, multi-strip scanning line SL1~SL2, Multiple data lines DL1~DL5, multiple dot structure P1~P4 and colored filter including multiple color filter patterns CF1~CF6 Photosphere CFL.In addition, in the present embodiment, active component array base board 10 further includes insulating layer PV1 and insulating layer PV2.

The material of substrate 100 can for glass, quartz, organic polymer or its similar to material.Scan line SL1~SL2, data Line DL1~DL5 is located on substrate 100.Scan line SL1~SL2 is not identical as the extending direction of data line DL1~DL5, preferably Be the extending direction and data line DL1~DL5 of scan line SL1~SL2 extending direction it is staggered.Specifically, in this implementation In mode, the extending direction of scan line SL1~SL2 is first direction D1, and the extending direction of data line DL1~DL5 is second Direction D2, wherein first direction D1 and second direction D2 are staggered.

In addition, scan line SL1~SL2 and data line DL1~DL5 are to be located at different film layer, and scan line SL1~ Lock insulating layer GI is accompanied between SL2 and data line DL1~DL5 (Yu Houwen is described in detail).In addition, examining based on electric conductivity Consider, scan line SL1~SL2 and data line DL1~DL5 are usually to use metal material.However, the present invention is not limited thereto, root According to other embodiments, the nitrogen of such as alloy, metal material is also can be used in scan line SL1~SL2 and data line DL1~DL5 Compound, the oxide of metal material, metal material nitrogen oxides etc. other conductive materials or metal material and it is aforementioned its The stack layer of its conductive material.Other one is mentioned that, since Fig. 1 only shows local active component array base board 10, Only symbolically show two of them scan line SL1~SL2 and five data line DL1~DL5.

Dot structure P1~P4 is located on substrate 100 and is disposed adjacent along first direction D1.Specifically, in this embodiment party In formula, dot structure P1 and scan line SL1 and data line DL1 are electrically connected；Dot structure P2 and scan line SL1 and data line DL2 is electrically connected；Dot structure P3 and scan line SL1 and data line DL3 is electrically connected；And dot structure P4 and scan line SL1 and data line DL4 is electrically connected.More specifically, in the present embodiment, dot structure P1 include active member T1 and Pixel electrode PE1；Dot structure P2 includes active member T2 and pixel electrode PE2；Dot structure P3 includes active member T3 And pixel electrode PE3；And dot structure P4 includes active member T4 and pixel electrode PE4.

In the present embodiment, active member T1~T4 can be membrane transistor respectively, and wherein active member T1 includes Grid G E1, channel layer CH1, drain D E1 and source S E1；Active member T2 includes grid G E2, channel layer CH2, drain D E2 And source S E2；Active member T3 includes grid G E3, channel layer CH3, drain D E1 and source S E3；And active member T4 Including grid G E4, channel layer CH4, drain D E4 and source S E4.Specifically, grid G E1~GE4 and scan line SL1 is one Continuous conductive pattern, this indicates that grid G E1~GE4 and scan line SL1 is electrically connected to each other, and grid G E1~GE4 and scanning Line SL1 is same film layer, has identical material.In addition, source S E1 and data line DL1 is a continuous conductive pattern, source electrode It is a continuous conductive pattern and source electrode that SE2 and data line DL2, which is a continuous conductive pattern, source S E3 and data line DL3, SE4 and data line DL4 are a continuous conductive pattern, this indicate source S E1 and data line DL1 be electrically connected to each other, source S E2 Be electrically connected to each other with data line DL2, source S E3 and data line DL3 are electrically connected to each other, source S E4 and data line DL4 each other It is electrically connected, and source S E1~SE4 and data line DL1~DL5 is same film layer, has identical material.In addition, in this implementation In mode, the material of channel layer CH1~CH4 is, for example, amorphous silicon material.

In addition, in the present embodiment, lock insulating layer GI is conformally formed on the substrate 100, and configure grid G E1~ Between GE4 and channel layer CH1~CH4.The material of lock insulating layer GI include inorganic material (such as: silica, silicon nitride, nitrogen oxygen The stack layer of SiClx, other suitable materials or above-mentioned at least two material), organic material or combinations of the above.In addition, In present embodiment, active member T1~T4 be illustrate by taking the bottom grid film transistor as an example, but the present invention is not limited to This.In other embodiments, active member T1~T4 is also possible to top gate-type thin film transistor.

In addition, insulating layer PV1 is conformally formed on substrate 100, and covers source S E1~SE4 and drain D E1~DE4, To provide the function of insulation with protection.The material of insulating layer PV1 include inorganic material (such as: silica, silicon nitride, nitrogen oxidation The stack layer of silicon or above-mentioned at least two material), organic material or combinations of the above, and the material of insulating layer PV1 can be with lock Insulating layer GI is identical or different.

In addition, pixel electrode PE1~PE4 is electrically connected with active member T1~T4 respectively.Specifically, pixel electrode PE1 is electrically connected by contact hole H1 and drain D E1；Pixel electrode PE2 is electrically connected by contact hole H2 and drain D E2；Picture Plain electrode PE3 is electrically connected by contact hole H3 and drain D E3；And pixel electrode PE4 passes through contact hole H4 and drain D E4 electricity Property connection.In the present embodiment, the material of pixel electrode PE1~PE4 is, for example, transparency conducting layer comprising metal oxidation Object, e.g. indium tin oxide (indium-tin-oxide, ITO), indium-zinc oxide (indium zinc oxide, IZO), Aluminium tin-oxide (aluminum tin oxide, ATO), aluminium zinc oxide (aluminum zinc oxide, AZO), indium germanium zinc Oxide (indium gallium zinc oxide, IGZO) or other suitable oxides or be it is above-mentioned both at least Stack layer.In addition, pixel electrode PE1~PE4 can be any pixel electrode well known to those skilled in the art.Namely It says, pixel electrode PE1~PE4 is not limited with the rice word pattern drawn in Fig. 1.Other one is mentioned that, since Fig. 1 is only painted Local active component array base board 10 out, therefore only symbolically show four dot structure P1~P4.

Color filter patterns CF1~CF6 is located on substrate 100 and respective pixel structure setting.That is, active member Array substrate 10 is the active that color filter patterns are configured on active cell array (Color filter on Array, COA) Component array baseplate.Specifically, in the present embodiment, color filter patterns CF2 respective pixel structure P1 is arranged；Colour filter Light pattern CF3 respective pixel structure P2 setting；Color filter patterns CF4 respective pixel structure P3 setting；And colorized optical filtering figure Case CF5 respective pixel structure P4 setting.In addition, though Fig. 1 only symbolically shows four dot structure P1~P4, but affiliated Has usually intellectual in technical field, it is to be appreciated that color filter patterns CF1 is the corresponding pixel adjacent with dot structure P1 Structure setting, and color filter patterns CF6 is the corresponding dot structure setting adjacent with dot structure P4.

In addition, in the present embodiment, color filter patterns CF1~CF6 is the pixel of corresponding position on a same row respectively Structure and be arranged.However, the present invention is not limited thereto.In other embodiments, color filter patterns CF1~CF6 difference It can be a corresponding dot structure and be arranged.

In addition, insulating layer PV2 is formed on substrate 100, and covers chromatic filter layer CFL, to provide insulation and protection Function.The material of insulating layer PV2 include inorganic material (such as: silica, silicon nitride, silicon oxynitride or above-mentioned at least two material The stack layer of material), organic material or combinations of the above, and the material of insulating layer PV2 can be with lock insulating layer GI, insulating layer PV1 It is identical or different.

Furthermore, color filter patterns CF1~CF6 can be respectively red filter pattern, green filter pattern or Blue filter pattern.That is, in the present embodiment, chromatic filter layer CFL is the filter pattern institute structure by three kinds of colors At.Specifically, in the present embodiment, color filter patterns CF1 is, for example, blue filter pattern, color filter patterns CF2 E.g. red filter pattern, color filter patterns CF3 are, for example, green filter pattern, color filter patterns CF4 e.g. indigo plant Color filter pattern, color filter patterns CF5 are, for example, red filter pattern and color filter patterns CF6 is, for example, green filter Pattern.

In addition, in the present embodiment, color filter patterns CF2 includes hole V, and Hole V is the colour by part Filter pattern CF2 and covering part CP1 is jointly around forming, as shown in Figures 2 and 4.Specifically, referring to Fig. 1, figure 2 and Fig. 4, described hole V correspond to contact hole H1 setting, and pass through the pixel electrode PE1 of contact hole H1 and drain D E1 electric connection A part extend in hole V but do not extend on covering part CP1.That is, in the present embodiment, even if on ground In the deeper hole V of shape, desired pixel electrode PE1 can be still formed by micro image etching procedure.

In addition, in the present embodiment, covering part CP1 and color filter patterns CF3 are adjacent to each other, such as Fig. 2 and Fig. 4 institute Show.That is, in the present embodiment, covering part CP1 and color filter patterns CF3 are same film layer, have identical material.

In addition, in the present embodiment, color filter patterns CF3 and color filter patterns CF2 are partly overlapped.In detail and Speech, as shown in Figures 2 and 3, color filter patterns CF3 cover the color filter patterns CF2 of a part, wherein colorized optical filtering figure The side 110b of case CF2 is Chong Die with color filter patterns CF3.That is, in the present embodiment, color filter patterns CF3 It is just to be formed after color filter patterns CF2 formation.

In addition, since covering part CP1 and color filter patterns CF3 are adjacent to each other, therefore covering part CP1 can also cover one Partial color filter patterns CF2.Specifically, as shown in Fig. 2, covering part CP1 is partly weighed with color filter patterns CF2 It is folded, and the part Chong Die with covering part CP1 of color filter patterns CF2 has curved profile Q.It is noted that In present embodiment, after forming color filter patterns CF2 and formed before color filter patterns CF3, color filter patterns CF2 itself has an open hole, and after forming color filter patterns CF3, covering part CP1 is to cover a part The open hole and the curved profile Q and form hole V.In this way, in the present embodiment, pass through covering part CP1 covers the curved profile Q, can avoid curved profile Q (i.e. turn of color filter patterns CF2 of color filter patterns CF2 At angle) it is ruptured in subsequent reliability-test, thus improve reliability.

It is noted that with existing active component array base board phase that closed hole is arranged in color filter patterns Than by color filter patterns CF2 there is open hole to borrow so that dot structure P1 can have preferable space utilization rate To improve aperture opening ratio, and the design of hole can not be limited by the processing procedure resolution of color filter patterns.In this way, picture Plain structure P1 can be designed to lesser size, make active component array base board 10 that can be effectively applied to high parsing whereby It spends on product.

In addition, as shown in Fig. 2, covering part CP1 has opposite side 112a and side 112b, wherein covering part CP1 The side 110b of side 112b and color filter patterns CF2 is trimmed.In addition, in the present embodiment, the side of covering part CP1 Minimum range u between 112a and side 112b is 2 μm to 15 μm.

In addition, as shown in Fig. 2, color filter patterns CF2 and color filter patterns CF1 are partly overlapped.Specifically, color Color filter pattern CF1 covers the color filter patterns CF2 of a part, wherein the side 110a of color filter patterns CF2 and coloured silk Color filter pattern CF1 overlapping.That is, in the present embodiment, color filter patterns CF1 is in color filter patterns CF2 It is just formed after being formed.

In addition, in the present embodiment, color filter patterns CF3 includes hole W, and Hole W is the colour by part Filter pattern CF3 and covering part CP2 is jointly around forming, as shown in Figures 2 and 4.Specifically, referring to Fig. 1, figure 2 and Fig. 4, described hole W correspond to contact hole H2 setting, and pass through the pixel electrode PE2 of contact hole H2 and drain D E2 electric connection A part extend in hole W but do not extend on covering part CP2.That is, in the present embodiment, even if on ground In the deeper hole W of shape, desired pixel electrode PE2 can be still formed by micro image etching procedure.

In addition, in the present embodiment, covering part CP2 and color filter patterns CF4 are adjacent to each other, such as Fig. 2 and Fig. 4 institute Show.That is, in the present embodiment, covering part CP2 and color filter patterns CF4 are same film layer, have identical material.

In addition, in the present embodiment, color filter patterns CF4 and color filter patterns CF3 are partly overlapped.In detail and Speech, as shown in Figures 2 and 3, color filter patterns CF4 cover the color filter patterns CF3 of a part, wherein colorized optical filtering figure The side 120 of case CF3 is Chong Die with color filter patterns CF4.That is, in the present embodiment, color filter patterns CF4 is It is just formed after color filter patterns CF3 formation.

In addition, since covering part CP2 and color filter patterns CF4 are adjacent to each other, therefore covering part CP2 can also cover one Partial color filter patterns CF3.Specifically, as shown in Fig. 2, covering part CP2 is partly weighed with color filter patterns CF3 It is folded, and the part Chong Die with covering part CP2 of color filter patterns CF3 has curved profile Q.It is noted that In present embodiment, after forming color filter patterns CF3 and formed before color filter patterns CF4, color filter patterns CF3 itself has an open hole, and after forming color filter patterns CF4, covering part CP2 is to cover a part The open hole and the curved profile Q and form hole W.In this way, in the present embodiment, pass through covering part CP2 covers the curved profile Q, can avoid curved profile Q (i.e. turn of color filter patterns CF3 of color filter patterns CF3 At angle) it is ruptured in subsequent reliability-test, thus improve reliability.

It is noted that with existing active component array base board phase that closed hole is arranged in color filter patterns Than by color filter patterns CF3 there is open hole to borrow so that dot structure P2 can have preferable space utilization rate To improve aperture opening ratio, and the design of hole can not be limited by the processing procedure resolution of color filter patterns.In this way, picture Plain structure P2 can be designed to lesser size, make active component array base board 10 that can be effectively applied to high parsing whereby It spends on product.

In addition, as shown in Fig. 2, covering part CP2 has opposite side 122a and side 122b, wherein covering part CP2 The side 120 of side 122b and color filter patterns CF3 trims.In addition, in the present embodiment, the side of covering part CP2 Minimum range u between 122a and side 122b is 2 μm to 15 μm.

In addition, in the present embodiment, color filter patterns CF4 includes hole X, and hole X is by color filter patterns CF4 Around forming.Specifically, contact hole H3 setting is corresponded to referring to Fig. 1, Fig. 2 and Fig. 4, described hole X, and passes through contact The a part for the pixel electrode PE3 that window H3 and drain D E3 is electrically connected extends in hole X but does not extend to colorized optical filtering figure On case CF4.That is, in the present embodiment, even if can still pass through micro image etching procedure in the deeper hole X of landform Form desired pixel electrode PE3.

In addition, in the present embodiment, color filter patterns CF5 and color filter patterns CF4 are partly overlapped.In detail and Speech, as shown in Figures 2 and 3, color filter patterns CF4 cover the color filter patterns CF5 of a part, wherein colorized optical filtering figure The side 130a of case CF5 is Chong Die with color filter patterns CF4.That is, in the present embodiment, color filter patterns CF4 It is just to be formed after color filter patterns CF5 formation.

Furthermore, since color filter patterns CF4 is in color filter patterns CF3 and color filter patterns CF5 What is just formed after being formed (is i.e. color filter patterns CF4 while covering color filter patterns CF3 adjacent thereto and colored filtering Light pattern CF5), therefore be a closed hole by hole X, the reliability of active component array base board 10 can be improved whereby.

In addition, in the present embodiment, color filter patterns CF5 includes hole Y, and Hole Y is the colour by part Filter pattern CF5 and covering part CP3 is jointly around forming, as shown in Figures 2 and 4.Specifically, referring to Fig. 1, figure 2 and Fig. 4, described hole Y correspond to contact hole H4 setting, and pass through the pixel electrode PE4 of contact hole H4 and drain D E4 electric connection A part extend in hole Y but do not extend on covering part CP3.That is, in the present embodiment, even if on ground In the deeper hole Y of shape, desired pixel electrode PE4 can be still formed by micro image etching procedure.

In addition, in the present embodiment, covering part CP3 and color filter patterns CF6 are adjacent to each other, such as Fig. 2 and Fig. 4 institute Show.That is, in the present embodiment, covering part CP3 and color filter patterns CF6 are same film layer, have identical material.

In addition, in the present embodiment, color filter patterns CF6 and color filter patterns CF5 are partly overlapped.In detail and Speech, as shown in Figures 2 and 3, color filter patterns CF6 cover the color filter patterns CF5 of a part, wherein colorized optical filtering figure The side 130b of case CF5 is Chong Die with color filter patterns CF6.That is, in the present embodiment, color filter patterns CF6 It is just to be formed after color filter patterns CF5 formation.

In addition, since covering part CP3 and color filter patterns CF6 are adjacent to each other, therefore covering part CP3 can also cover one Partial color filter patterns CF5.Specifically, as shown in Fig. 2, covering part CP3 is partly weighed with color filter patterns CF5 It is folded, and the part Chong Die with covering part CP3 of color filter patterns CF5 has curved profile Q.It is noted that In present embodiment, after forming color filter patterns CF5 and formed before color filter patterns CF6, color filter patterns CF5 itself has an open hole, and after forming color filter patterns CF6, covering part CP3 is to cover a part The open hole and the curved profile Q and form hole Y.In this way, in the present embodiment, pass through covering part CP3 covers the curved profile Q, can avoid curved profile Q (i.e. turn of color filter patterns CF5 of color filter patterns CF5 At angle) it is ruptured in subsequent reliability-test, thus improve reliability.

It is noted that with existing active component array base board phase that closed hole is arranged in color filter patterns Than by color filter patterns CF5 there is open hole to borrow so that dot structure P4 can have preferable space utilization rate To improve aperture opening ratio, and the design of hole can not be limited by the processing procedure resolution of color filter patterns.In this way, picture Plain structure P4 can be designed to lesser size, make active component array base board 10 that can be effectively applied to high parsing whereby It spends on product.

In addition, as shown in Fig. 2, covering part CP3 has opposite side 132a and side 132b, wherein covering part CP3 The side 130b of side 132b and color filter patterns CF5 is trimmed.In addition, in the present embodiment, the side of covering part CP3 Minimum range u between 132a and side 132b is 2 μm to 15 μm.

In addition, in the embodiment of above-mentioned Fig. 1 to Fig. 4, the hole V of color filter patterns CF2, color filter patterns Position set by the hole Y of the hole W of CF3, the hole X of color filter patterns CF4 and color filter patterns CF5 has Consistent direction.However, the present invention is not limited thereto.In other embodiments, hole V, the colour of color filter patterns CF2 Set by the hole Y of the hole W of filter pattern CF3, the hole X of color filter patterns CF4 and color filter patterns CF5 Position also can have staggered direction.Hereinafter, will be described in detail referring to Fig. 5.

Fig. 5 is the upper schematic diagram of the chromatic filter layer in the active component array base board of another embodiment of the present invention. Referring to Fig. 5 and Fig. 2, the chromatic filter layer CFL of the chromatic filter layer 2CFL and Fig. 2 of Fig. 5 are similar therefore similar or identical Component indicated with similar or identical component symbol, and related description i.e. repeat no more.Hereinafter, putting up at difference between the two It explains, the two mutually exists together please according to the symbol in Fig. 1 to Fig. 4 referring to preceding description.

Referring to figure 5., in the present embodiment, color filter patterns CF3 includes hole 2W, and hole 2W is by colorized optical filtering Pattern CF3 is surrounded and is formed.That is, in the present embodiment, hole 2W is a closed hole.In addition, according to figure 1 above To the embodiment of Fig. 4, those skilled in the art should understand that the hole 2W in color filter patterns CF3 be also it is corresponding to Make the contact hole that pixel electrode is electrically connected with the drain and be arranged, and a part of the pixel electrode extend in hole 2W but But it does not extend on color filter patterns CF3.

In addition, in the present embodiment, the hole 2W's of the hole V and color filter patterns CF3 of color filter patterns CF2 It is opposite for configuring direction.

It is noted that in the present embodiment, the hole V's and color filter patterns CF3 of color filter patterns CF2 There are still have covering part CP1 and color filter patterns CF3, and the pixel being correspondingly arranged with hole V and hole 2W between hole 2W Electrode does not all extend on covering part CP and color filter patterns CF3, arrange in pairs or groups whereby color filter patterns CF2 and colorized optical filtering The dot structure of pattern CF3 is not susceptible to short circuit problem, and then promotes process rate.

In addition, in the present embodiment, color filter patterns CF5 includes hole 2Y, and Hole 2Y is the coloured silk by part Color filter pattern CF5 and covering part 2CP2 surround jointly and forms.According to the embodiment of figure 1 above to Fig. 4, art technology Personnel are, it is to be appreciated that the hole 2Y in color filter patterns CF5 is also corresponded to be electrically connected with the drain pixel electrode Contact hole and be arranged, and a part of the pixel electrode is extended in hole 2Y but is not extended on covering part 2CP2.

In addition, in the present embodiment, covering part 2CP2 and color filter patterns CF4 are adjacent to each other.That is, In present embodiment, covering part 2CP2 and color filter patterns CF4 are same film layer, have identical material.

In addition, since covering part 2CP2 and color filter patterns CF4 are adjacent to each other, and color filter patterns CF4 is covered Live in a part of color filter patterns CF5, therefore covering part 2CP2 can also cover the color filter patterns CF5 of a part.In detail For, covering part 2CP2 and color filter patterns CF5 are partly be overlapped, and color filter patterns CF5's is heavy with covering part 2CP2 The folded part has curved profile Q.It is noted that in the present embodiment, formed color filter patterns CF5 it It afterwards and is formed before color filter patterns CF4, color filter patterns CF5 itself has an open hole, and colored being formed After filter pattern CF4, covering part 2CP2 is the open hole and the curved profile Q and shape for covering a part At hole 2Y.In this way, in the present embodiment, cover the curved profile Q by covering part 2CP2, colour can avoid The curved profile Q (i.e. the corner of color filter patterns CF5) of filter pattern CF5 ruptures in subsequent reliability-test, Thus improve reliability.

It is noted that with existing active component array base board phase that closed hole is arranged in color filter patterns Than there is open hole by color filter patterns CF5, so that the dot structure of collocation color filter patterns CF5 can have Preferable space utilization rate so as to improving aperture opening ratio, and parse the design of hole can not by the processing procedure of color filter patterns The limitation of degree.In this way, which the dot structure can be designed to lesser size, make whereby with chromatic filter layer The active component array base board of 2CFL can be effectively applied on high-res product.

In addition, in the present embodiment, covering part 2CP2 has opposite side 222a and side 222b, wherein covering part The side 130a of the side 222b and color filter patterns CF5 of 2CP2 are trimmed.In addition, in the present embodiment, covering part 2CP2 Side 222a and side 222b between minimum range u be 2 μm to 15 μm.

In addition, in the present embodiment, the hole 2Y's of the hole X and color filter patterns CF5 of color filter patterns CF4 It is opposite for configuring direction.

Similarly, it is worth mentioning at this point that, in the present embodiment, the hole X and colorized optical filtering figure of color filter patterns CF4 There are still there is a covering part 2CP2 and color filter patterns CF4 between the hole 2Y of case CF5, and with hole X and hole 2Y is corresponding sets The pixel electrode set all does not extend on covering part 2CP2 and color filter patterns CF4, and arrange in pairs or groups color filter patterns CF4 whereby And the dot structure of color filter patterns CF5 is not susceptible to short circuit problem, and then promotes process rate.

In addition, in the embodiment of aforementioned Fig. 1 to Fig. 4, color filter patterns CF2~CF5 difference all only one holes Hole, i.e. color filter patterns CF2 have hole with hole W, color filter patterns CF4 with hole V, color filter patterns CF3 Hole X and color filter patterns CF5 has hole Y.However, the present invention is not limited thereto.In other embodiments, colored Filter pattern CF2~CF5 also can have more than one hole respectively.Hereinafter, will be described in detail referring to Fig. 6.

Fig. 6 is the upper schematic diagram of the chromatic filter layer in the active component array base board of another embodiment of the present invention. Referring to Fig. 6 and Fig. 2, the chromatic filter layer CFL of the chromatic filter layer 3CFL and Fig. 2 of Fig. 6 are similar therefore similar or identical Component indicated with similar or identical component symbol, and related description i.e. repeat no more.Hereinafter, putting up at difference between the two It explains, the two mutually exists together please according to the symbol in Fig. 1 to Fig. 4 referring to preceding description.

Fig. 6 is please referred to, in the present embodiment, color filter patterns CF2 also includes hole 3V other than comprising hole V, Its Hole 3V is to be surround to form jointly by the color filter patterns CF2 and covering part CP4 of part.According to figure 1 above to Fig. 4 Embodiment, those skilled in the art should understand that hole 3V in color filter patterns CF2 is also corresponding to make pixel Contact hole that electrode is electrically connected with the drain and be arranged, and a part of the pixel electrode extends in hole 3V but does not prolong It extends on covering part CP4.

In addition, in the present embodiment, covering part CP4 and color filter patterns CF1 are adjacent to each other.That is, In present embodiment, covering part CP4 and color filter patterns CF1 are same film layer, have identical material.

In addition, since covering part CP4 and color filter patterns CF1 is adjacent to each other and color filter patterns CF1 is covered The color filter patterns CF2 of a part, therefore covering part CP4 can also cover the color filter patterns CF2 of a part.In detail and Speech, covering part CP4 and color filter patterns CF2 are partly be overlapped, and color filter patterns CF2's is Chong Die with covering part CP4 The part has curved profile Q.It is noted that in the present embodiment, after forming color filter patterns CF2 and It is formed before color filter patterns CF1, color filter patterns CF2 itself has an open hole, and is forming colorized optical filtering After pattern CF1, covering part CP4 is to cover a part of open hole and the curved profile Q and form hole Hole 3V.In this way, in the present embodiment, cover the curved profile Q by covering part CP4, colorized optical filtering can avoid The curved profile Q (i.e. the corner of color filter patterns CF2) of pattern CF2 ruptures in subsequent reliability-test, thus Improve reliability.

It is noted that with existing active component array base board phase that closed hole is arranged in color filter patterns Than there is open hole by color filter patterns CF2, so that the dot structure of collocation color filter patterns CF2 can have Preferable space utilization rate so as to improving aperture opening ratio, and parse the design of hole can not by the processing procedure of color filter patterns The limitation of degree.In this way, which the dot structure can be designed to lesser size, make whereby with chromatic filter layer The active component array base board of 3CFL can be effectively applied on high-res product.

In addition, in the present embodiment, covering part CP4 has opposite side 142a and side 142b, wherein covering part The side 110a of the side 142b and color filter patterns CF2 of CP4 are trimmed.In addition, in the present embodiment, covering part CP4's Minimum range u between side 142a and side 142b is 2 μm to 15 μm.

In addition, in the present embodiment, color filter patterns CF3 also includes hole 3W other than comprising hole W, wherein Hole 3W is surrounded by color filter patterns CF3 and is formed.That is, in the present embodiment, hole 3W is a closed hole. In addition, according to the embodiment of figure 1 above to Fig. 4, those skilled in the art should understand that the hole in color filter patterns CF3 Hole 3W be also it is corresponding be arranged to the contact hole that is electrically connected with the drain pixel electrode, and a part of the pixel electrode It extends in hole 3W but does not extend on color filter patterns CF3.

In addition, in the present embodiment, color filter patterns CF4 also includes hole 3X other than comprising hole X, wherein Hole 3X is surrounded by color filter patterns CF4 and is formed.That is, in the present embodiment, hole 3X is a closed hole. In addition, according to the embodiment of figure 1 above to Fig. 4, those skilled in the art should understand that the hole in color filter patterns CF4 Hole 3X be also it is corresponding be arranged to the contact hole that is electrically connected with the drain pixel electrode, and a part of the pixel electrode It extends in hole 3X but does not extend on color filter patterns CF4.

In addition, color filter patterns CF5 includes also hole 3Y, Hole 3Y is by part other than comprising hole Y Color filter patterns CF5 and covering part 3CP2 surround jointly and forms.According to the embodiment of figure 1 above to Fig. 4, this field skill Art personnel are, it is to be appreciated that the hole 3Y in color filter patterns CF5 is also corresponding be electrically connected with the drain pixel electrode Contact hole and be arranged, and a part of the pixel electrode is extended in hole 3Y but is not extended on covering part 3CP2.

In addition, in the present embodiment, covering part 3CP2 and color filter patterns CF4 are adjacent to each other.That is, In present embodiment, covering part 3CP2 and color filter patterns CF4 are same film layer, have identical material.

In addition, since covering part 3CP2 and color filter patterns CF4 are adjacent to each other, and color filter patterns CF4 is covered Live in a part of color filter patterns CF5, therefore covering part 3CP2 can also cover the color filter patterns CF5 of a part.In detail For, covering part 3CP2 and color filter patterns CF5 are partly be overlapped, and color filter patterns CF5's is heavy with covering part 3CP2 The folded part has curved profile Q.It is noted that in the present embodiment, formed color filter patterns CF5 it It afterwards and is formed before color filter patterns CF4, color filter patterns CF5 itself has an open hole, and colored being formed After filter pattern CF4, covering part 3CP2 is the open hole and the curved profile Q and shape for covering a part At hole 3Y.In this way, in the present embodiment, cover the curved profile Q by covering part 3CP2, colour can avoid The curved profile Q (i.e. the corner of color filter patterns CF5) of filter pattern CF5 ruptures in subsequent reliability-test, Thus improve reliability.

It is noted that with existing active component array base board phase that closed hole is arranged in color filter patterns Than there is open hole by color filter patterns CF5, so that the dot structure of collocation color filter patterns CF5 can have Preferable space utilization rate so as to improving aperture opening ratio, and parse the design of hole can not by the processing procedure of color filter patterns The limitation of degree.In this way, which the dot structure can be designed to lesser size, make whereby with chromatic filter layer The active component array base board of 3CFL can be effectively applied on high-res product.

In addition, in the present embodiment, covering part 3CP2 has opposite side 322a and side 322b, wherein covering part The side 130a of the side 322b and color filter patterns CF5 of 3CP2 are trimmed.In addition, in the present embodiment, covering part 3CP2 Side 322a and side 322b between minimum range u be 2 μm to 15 μm.

In addition, in the embodiment of aforementioned Fig. 1 to Fig. 4, Fig. 5 and Fig. 6, the two sides of any covering part being oppositely arranged Between minimum range u be all 2 μm to 15 μm, such as the minimum range u between the side 112a and side 112b of covering part CP1 It is 2 μm to 15 μm.However, the present invention is not limited thereto.In other embodiments, the two sides of covering part being oppositely arranged it Between minimum range be also possible to be situated between other ranges.Hereinafter, will be described in detail referring to Fig. 7 to Figure 12.

Fig. 7 is the upper schematic diagram of the chromatic filter layer in the active component array base board of another embodiment of the present invention. Referring to Fig. 7 and Fig. 2, the chromatic filter layer CFL of the chromatic filter layer 4CFL and Fig. 2 of Fig. 7 are similar therefore similar or identical Component indicated with similar or identical component symbol, and related description i.e. repeat no more.Hereinafter, putting up at difference between the two It explains, the two mutually exists together please according to the symbol in Fig. 1 to Fig. 4 referring to preceding description.

Specifically, referring to Fig. 7 and Fig. 2, the chromatic filter layer CFL of the chromatic filter layer 4CFL and Fig. 2 of Fig. 7 it Between difference essentially consist in: the most narrow spacing in the embodiment of Fig. 7, between the side 112a and side 112b of covering part CP1 From u, covering part CP2 side 122a and side 122b between minimum range u and covering part CP3 side 132a and side Minimum range u between the 132b of side is all 5 μm to 25 μm；And in the embodiment of Fig. 2, the side 112a of covering part CP1 and Minimum range u and covering between the side 122a and side 122b of minimum range u, covering part CP2 between the 112b of side Minimum range u between the side 132a and side 132b of portion CP3 is all between 2 μm to 15 μm.

It is worth noting that in the present embodiment, by between the side 112a and side 112b of covering part CP1 most Small distance u, covering part CP2 side 122a and side 122b between minimum range u and covering part CP3 side 132a Minimum range u between the 132b of side is all situated between 5 μm to 25 μm, so that covering part CP1, covering part CP2 and covering part CP3 The corner that color filter patterns CF2, color filter patterns CF3 and color filter patterns CF5 can more completely be covered, is borrowed This further improves reliability.

Fig. 8 is the upper schematic diagram of the chromatic filter layer in the active component array base board of another embodiment of the present invention. Referring to Fig. 8 and Fig. 5, the chromatic filter layer 2CFL of the chromatic filter layer 5CFL and Fig. 5 of Fig. 8 is similar therefore similar or phase Same component is indicated with similar or identical component symbol, and related description repeats no more.Hereinafter, putting up with difference between the two Place explains, the two mutually exist together please symbol according to Fig. 1 into Fig. 5 referring to preceding description.

Specifically, referring to Fig. 8 and Fig. 5, the chromatic filter layer 2CFL of the chromatic filter layer 5CFL and Fig. 5 of Fig. 8 Between difference essentially consist in: the minimum in the embodiment of Fig. 8, between the side 112a and side 112b of covering part CP1 Minimum range u between the side 222a and side 222b of distance u and covering part 2CP2 is all between 5 μm to 25 μm；And Minimum range u and covering part 2CP2 in the embodiment of Fig. 5, between the side 112a and side 112b of covering part CP1 Side 222a and side 222b between minimum range u all between 2 μm to 15 μm.

It is worth noting that in the present embodiment, by between the side 112a and side 112b of covering part CP1 most Minimum range u between the side 222a and side 222b of small distance u and covering part 2CP2 all between 5 μm to 25 μm, Covering part CP1 and covering part 2CP2 is enabled more completely to cover color filter patterns CF2's and color filter patterns CF5 Reliability is further improved in corner whereby.

In addition, in the present embodiment, by minimum range u between the side 112a and side 112b of covering part CP1, And the minimum range u between the side 222a and side 222b of covering part 2CP2 is all between 5 μm to 25 μm, so that with figure 5 embodiment is compared, and hole 2W, which can be provided closer to the position of hole V and hole X, can be provided closer to hole The position of hole 2Y.In this way, in the present embodiment, the pixel for the color filter patterns CF3 and color filter patterns CF4 that arranges in pairs or groups Structure can have preferable space utilization rate, so as to improving aperture opening ratio.

Fig. 9 is the upper schematic diagram of the chromatic filter layer in the active component array base board of another embodiment of the present invention. Referring to Fig. 9 and Fig. 6, the chromatic filter layer 3CFL of the chromatic filter layer 6CFL and Fig. 6 of Fig. 9 is similar therefore similar or phase Same component is indicated with similar or identical component symbol, and related description repeats no more.Hereinafter, putting up with difference between the two Place explains, and the two mutually exists together please according to the symbol in Fig. 1 to Fig. 4, Fig. 6 referring to preceding description.

Specifically, referring to Fig. 9 and Fig. 6, the chromatic filter layer 3CFL of the chromatic filter layer 6CFL and Fig. 6 of Fig. 9 Between difference essentially consist in: the minimum in the embodiment of Fig. 9, between the side 112a and side 112b of covering part CP1 Distance u, covering part CP2 side 122a and side 122b between minimum range u, covering part CP3 side 132a and side Minimum range u and covering part between the side 322a and side 322b of minimum range u, covering part 3CP2 between 132b Minimum range u between the side 142a and side 142b of CP4 is all between 5 μm to 25 μm；And in the embodiment of Fig. 6 In, the side 122a and side 122b of minimum range u, covering part CP2 between the side 112a and side 112b of covering part CP1 Between minimum range u, covering part CP3 side 132a and side 132b between minimum range u, covering part 3CP2 side Minimum range between the side 142a and side 142b of minimum range u and covering part CP4 between 322a and side 322b U is all between 2 μm to 15 μm.

It is worth noting that in the present embodiment, by between the side 112a and side 112b of covering part CP1 most Small distance u, covering part CP2 side 122a and side 122b between minimum range u, covering part CP3 side 132a and side Minimum range u and covering between the side 322a and side 322b of minimum range u, covering part 3CP2 between the 132b of side Minimum range u between the side 142a and side 142b of portion CP4 is all between 5 μm to 25 μm, so that covering part CP1, covering Cover CP2, covering part CP3, covering part 3CP2 and covering part CP4 can more completely cover color filter patterns CF2, colour Reliability is further improved in the corner of filter pattern CF3 and color filter patterns CF5 whereby.

In addition, in the present embodiment, by minimum range u between the side 112a and side 112b of covering part CP1, The side 132a and side 132b of minimum range u, covering part CP3 between the side 122a and side 122b of covering part CP2 it Between minimum range u, covering part 3CP2 side 322a and side 322b between minimum range u and covering part CP4 side Minimum range u between side 142a and side 142b is all between 5 μm to 25 μm, so that compared with the embodiment of Fig. 6, hole Hole 3W can be provided closer to the position of hole V, hole 3X can be provided closer to position and the hole X energy of hole W Enough it is provided closer to the position of hole 3Y.In this way, in the present embodiment, arrange in pairs or groups color filter patterns CF3 and colour The dot structure of filter pattern CF4 can have preferable space utilization rate, so as to improving aperture opening ratio.

Figure 10 is the upper schematic diagram of the chromatic filter layer in the active component array base board of another embodiment of the present invention. Referring to Figure 10 and Fig. 2, the chromatic filter layer CFL of the chromatic filter layer 7CFL and Fig. 2 of Figure 10 is similar therefore similar or phase Same component is indicated with similar or identical component symbol, and related description repeats no more.Hereinafter, putting up with difference between the two Place explains, and the two mutually exists together please according to the symbol in Fig. 1 to Fig. 4 referring to preceding description.

Specifically, referring to Figure 10 and Fig. 2, the chromatic filter layer CFL of the chromatic filter layer 7CFL and Fig. 2 of Figure 10 Between difference essentially consist in: the embodiment Hole V of Figure 10 adjacent to covering part CP1, hole W adjacent to covering part The width U of the neighbouring covering part CP3 of CP2 and hole Y be smaller than the embodiment Hole V of Fig. 2 adjacent to covering part The width U of the neighbouring covering part CP3 adjacent to covering part CP2 and hole Y of CP, hole W.

It is worth noting that as it was noted above, due to Figure 10 embodiment Hole V adjacent to covering part CP1, hole The width U of the neighbouring covering part CP3 adjacent to covering part CP2 and hole Y of hole W is smaller than the embodiment Hole of Fig. 2 The width U of the neighbouring covering part CP3 adjacent to covering part CP2 and hole Y adjacent to covering part CP, hole W of V, therefore In the embodiment of Figure 10, pass through minimum range u between the side 112a and side 112b of covering part CP1, covering part CP2 Minimum between the side 132a and side 132b of minimum range u and covering part CP3 between side 122a and side 122b Distance u all between 2 μm to 15 μm, that is, aloow covering part CP1, covering part CP2 and covering part CP3 effective over The live in corner of color filter patterns CF2, color filter patterns CF3 and color filter patterns CF5, so as to improving reliability.

Figure 11 is the upper schematic diagram of the chromatic filter layer in the active component array base board of another embodiment of the present invention. Referring to Figure 11 and Fig. 5, the chromatic filter layer 2CFL of the chromatic filter layer 8CFL and Fig. 5 of Figure 11 it is similar therefore similar or Identical component is indicated with similar or identical component symbol, and related description repeats no more.Hereinafter, putting up with difference between the two Different place explains, the two mutually exist together please symbol according to Fig. 1 into Fig. 5 referring to preceding description.

Specifically, referring to Figure 11 and Fig. 5, the chromatic filter layer of the chromatic filter layer 8CFL and Fig. 5 of Figure 11 Difference between 2CFL essentially consists in: the neighbour adjacent to covering part CP1 and hole 2Y of the embodiment Hole V of Figure 11 The width U of nearly covering part 2CP2 is smaller than the neighbour adjacent to covering part CP1 and hole 2Y of the embodiment Hole V of Fig. 5 The width U of nearly covering part 2CP2.

It is worth noting that as it was noted above, due to Figure 11 embodiment Hole V adjacent to covering part CP1, with And the width U of the neighbouring covering part 2CP2 of hole 2Y be smaller than the embodiment Hole V of Fig. 5 adjacent to covering part CP1, with And the width U of the neighbouring covering part 2CP2 of hole 2Y, therefore in the embodiment of Figure 11, pass through the side 112a of covering part CP1 Minimum range u between the side 222a and side 222b of minimum range u and covering part 2CP2 between the 112b of side is all Between 2 μm to 15 μm, that is, aloow covering part CP1 and covering part 2CP2 effective over firmly color filter patterns The corner of CF2 and color filter patterns CF5, so as to improving reliability.

Figure 12 is the upper schematic diagram of the chromatic filter layer in the active component array base board of another embodiment of the present invention. Referring to Figure 12 and Fig. 6, the chromatic filter layer 3CFL of the chromatic filter layer 9CFL and Fig. 6 of Figure 12 it is similar therefore similar or Identical component is indicated with similar or identical component symbol, and related description repeats no more.Hereinafter, putting up with difference between the two Different place explains, and the two mutually exists together please according to the symbol in Fig. 1 to Fig. 4, Fig. 6 referring to preceding description.

Specifically, referring to Figure 12 and Fig. 6, the chromatic filter layer of the chromatic filter layer 9CFL and Fig. 6 of Figure 12 Difference between 3CFL essentially consists in: the embodiment Hole V of Figure 12 adjacent to covering part CP1, hole W adjacent to covering Cover CP2, the neighbouring covering part CP3 of hole Y, the neighbouring covering part 3CP2 of hole 3Y and hole 3V adjacent to covering part The width U of CP4 be smaller than the embodiment Hole V of Fig. 6 adjacent to covering part CP1, hole W adjacent to covering part CP2, Neighbouring covering part CP3, the neighbouring covering part 3CP2 of hole 3Y and the width adjacent to covering part CP4 of hole 3V of hole Y U。

It is worth noting that as it was noted above, due to Figure 12 embodiment Hole V adjacent to covering part CP1, hole Hole W adjacent to covering part CP2, the neighbouring covering part CP3 of hole Y, the neighbouring covering part 3CP2 of hole 3Y and hole 3V Adjacent to the width U of covering part CP4 be smaller than the embodiment Hole V of Fig. 6 adjacent to covering part CP1, hole W it is neighbouring In covering part CP2, the neighbouring covering part CP3 of hole Y, the neighbouring covering part 3CP2 of hole 3Y and hole 3V adjacent to covering The width U of portion CP4, therefore in the embodiment of Figure 11, pass through the minimum between the side 112a and side 112b of covering part CP1 Distance u, covering part CP2 side 122a and side 122b between minimum range u, covering part CP3 side 132a and side Minimum range u and covering part between the side 322a and side 322b of minimum range u, covering part 3CP2 between 132b Minimum range u between the side 142a and side 142b of CP4 all between 2 μm to 15 μm, that is, may make covering part CP1, Covering part CP2, covering part CP3, covering part 3CP2 and covering part CP4 can be effective over live in color filter patterns CF2, colour The corner of filter pattern CF3 and color filter patterns CF5, so as to improving reliability.

In addition, chromatic filter layer CFL~9CFL is filtered by red respectively in the embodiment of earlier figures 1 to Figure 12 Light pattern, green filter pattern and blue filter pattern are constituted.However, the present invention is not limited thereto.In other embodiments In, chromatic filter layer is also possible to by red filter pattern, green filter pattern, blue filter pattern and white filter pattern It is constituted.Hereinafter, 3 to Figure 21 will be described in detail referring to Fig.1.

Figure 13 is the upper schematic diagram of the chromatic filter layer in the active component array base board of another embodiment of the present invention. Referring to Figure 13 and Fig. 2, the chromatic filter layer CFL of the chromatic filter layer 10CFL and Fig. 2 of Figure 13 it is similar therefore similar or Identical component is indicated with similar or identical component symbol, and related description repeats no more.Hereinafter, putting up with difference between the two Different place explains, and the two mutually exists together please according to the symbol in Fig. 1 to Fig. 4 referring to preceding description.

Figure 13 is please referred to, in the present embodiment, chromatic filter layer 10CFL is in addition to including color filter patterns CF1~CF6 It outside, further include color filter patterns CF7.Specifically, in the present embodiment, color filter patterns CF1~CF7 respectively can be with It is red filter pattern, green filter pattern, blue filter pattern or white filter pattern.That is, in present embodiment In, chromatic filter layer 10CFL is made of the filter pattern of four kinds of colors.Specifically, in the present embodiment, colour filter It is, for example, red filter pattern, color filter patterns CF3 that light pattern CF1, which is, for example, white filter pattern, color filter patterns CF2, E.g. green filter pattern, color filter patterns CF4 are, for example, blue filter pattern, color filter patterns CF5 e.g. red Color filter pattern, color filter patterns CF6 are, for example, green filter pattern and color filter patterns CF7 is, for example, that white filters Pattern.

In the present embodiment, color filter patterns CF4 includes hole 10X, and hole 10X is schemed by partial colour optical filtering Case CF4 and covering part CP5 surround jointly and forms.According to the embodiment of figure 1 above to Fig. 4, those skilled in the art should can Understand, the hole 10X in color filter patterns CF4 be also it is corresponding to the contact hole that is electrically connected with the drain pixel electrode and Setting, and a part of the pixel electrode is extended in hole 10X but is not extended on covering part CP5.

In addition, in the present embodiment, covering part CP5 and color filter patterns CF7 are adjacent to each other.That is, In present embodiment, covering part CP5 and color filter patterns CF7 are same film layer, have identical material.

In addition, in the present embodiment, color filter patterns CF7 and color filter patterns CF4 are partly overlapped.In detail and Speech, color filter patterns CF7 cover the color filter patterns CF4 of a part, wherein the side 160 of color filter patterns CF4 It is Chong Die with color filter patterns CF7.That is, in the present embodiment, color filter patterns CF7 is in color filter patterns What CF4 was just formed after being formed.

Furthermore, since covering part CP5 and color filter patterns CF7 are adjacent to each other, therefore covering part CP5 can also cover Cover the color filter patterns CF4 of a part.Specifically, covering part CP5 and color filter patterns CF4 are partly be overlapped, and The part Chong Die with covering part CP5 of color filter patterns CF4 has curved profile Q.It is noted that in this implementation In mode, after forming color filter patterns CF4 and formed before color filter patterns CF7, color filter patterns CF4 itself With an open hole, and after forming color filter patterns CF7, covering part CP5 is to cover the described of a part to open It puts formula hole and the curved profile Q and forms hole 10X.In this way, in the present embodiment, pass through covering part CP5 The curved profile Q is covered, can avoid curved profile Q (the i.e. corner of color filter patterns CF4 of color filter patterns CF4 Place) it is ruptured in subsequent reliability-test, thus improve reliability.

It is noted that with existing active component array base board phase that closed hole is arranged in color filter patterns Than there is open hole by color filter patterns CF4, so that the dot structure of collocation color filter patterns CF4 can have Preferable space utilization rate so as to improving aperture opening ratio, and parse the design of hole can not by the processing procedure of color filter patterns The limitation of degree.In this way, which the dot structure can be designed to lesser size, make whereby with chromatic filter layer The active component array base board of 10CFL can be effectively applied on high-res product.

In addition, in the present embodiment, covering part CP5 has opposite side 152a and side 152b, wherein covering part The side 160 of the side 152b and color filter patterns CF4 of CP5 trim.In addition, in the present embodiment, the side of covering part CP5 Minimum range u between side 152a and side 152b is 2 μm to 15 μm.

In addition, in the present embodiment, color filter patterns CF7 includes hole Z, and hole Z is by color filter patterns CF7 Around forming.That is, in the present embodiment, hole Z is a closed hole.In addition, according to figure 1 above to Fig. 4's Embodiment, those skilled in the art should understand that the hole Z in color filter patterns CF7 is also corresponding to keep pixel electric Contact hole that pole is electrically connected with the drain and be arranged, and a part of the pixel electrode extends in hole Z but does not extend To color filter patterns CF7.

In addition, in the present embodiment, color filter patterns CF7 and color filter patterns CF5 are partly overlapped.In detail and Speech, color filter patterns CF7 cover the color filter patterns CF5 of a part, wherein the side 130a of color filter patterns CF5 It is Chong Die with color filter patterns CF7.That is, in the present embodiment, color filter patterns CF7 is in color filter patterns What CF5 was just formed after being formed.

Furthermore, since color filter patterns CF7 is in color filter patterns CF4 and color filter patterns CF5 What is just formed after being formed (is i.e. color filter patterns CF7 while covering color filter patterns CF4 adjacent thereto and colored filtering Light pattern CF5), therefore be a closed hole by hole Z, the active member with chromatic filter layer 10CFL can be improved whereby The reliability of array substrate.

In addition, in the embodiment of above-mentioned Figure 13, the hole V of color filter patterns CF2, color filter patterns CF3 The hole of hole W, the hole 10X of color filter patterns CF4, the hole Y of color filter patterns CF5 and color filter patterns CF7 Position set by the Z of hole has consistent direction.However, the present invention is not limited thereto.In other embodiments, colorized optical filtering The hole V of pattern CF2, the hole W of color filter patterns CF3, the hole 10X of color filter patterns CF4, color filter patterns Position set by the hole Z of the hole Y and color filter patterns CF7 of CF5 also can have staggered direction.Hereinafter, will It 4 is described in detail referring to Fig.1.

Figure 14 is the upper schematic diagram of the chromatic filter layer in the active component array base board of another embodiment of the present invention. Referring to Figure 14 and Figure 13, the chromatic filter layer 10CFL of chromatic filter layer 11CFL and Figure 13 of Figure 14 is similar, therefore phase Seemingly or identical component is indicated with similar or identical component symbol, and related description repeats no more.Hereinafter, putting up between the two Difference at explain, the two mutually exists together please according to the symbol in Fig. 1 to Fig. 4, Figure 13 referring to preceding description.

Figure 14 is please referred to, in the present embodiment, color filter patterns CF3 includes hole 11W, and hole 11W is by colour Filter pattern CF3 is surrounded and is formed.That is, in the present embodiment, hole 11W is a closed hole.In addition, according to upper The embodiment of literary Fig. 1 to Fig. 4, those skilled in the art should understand that the hole 11W in color filter patterns CF3 is also pair Using so that contact hole that pixel electrode is electrically connected with the drain and be arranged, and a part of the pixel electrode extends to hole In 11W but do not extend on color filter patterns CF3.

In addition, in the present embodiment, the hole 11W of the hole V and color filter patterns CF3 of color filter patterns CF2 Configuration direction be opposite.

It is noted that in the present embodiment, the hole V's and color filter patterns CF3 of color filter patterns CF2 There are still have covering part CP1 and color filter patterns CF3, and the picture being correspondingly arranged with hole V and hole 11W between hole 11W Plain electrode does not all extend on covering part CP1 and color filter patterns CF3, arrange in pairs or groups whereby color filter patterns CF2 and colour The dot structure of filter pattern CF3 is not susceptible to short circuit problem, and then promotes process rate.

In addition, in the present embodiment, color filter patterns CF7 includes hole 11Z, and hole 11Z is by colorized optical filtering figure Case CF7 is surrounded and is formed.That is, in the present embodiment, hole 11Z is a closed hole.In addition, according to figure 1 above To the embodiment of Fig. 4, those skilled in the art should understand that the hole 11Z in color filter patterns CF7 be also it is corresponding to Make the contact hole that pixel electrode is electrically connected with the drain and be arranged, and a part of the pixel electrode extends in hole 11Z But it does not extend on color filter patterns CF7.

In addition, in the present embodiment, the hole of the hole 10X and color filter patterns CF7 of color filter patterns CF4 The configuration direction of 11Z is opposite.

It is noted that in the present embodiment, the hole 10X and color filter patterns CF7 of color filter patterns CF4 Hole 11Z between there are still there is covering part CP5 and color filter patterns CF7, and be correspondingly arranged with hole 10X and hole 11Z Pixel electrode all do not extend on covering part CP5 and color filter patterns CF7, whereby arrange in pairs or groups color filter patterns CF4 and The dot structure of color filter patterns CF7 is not susceptible to short circuit problem, and then promotes process rate.

In addition, in the embodiment of earlier figures 13, color filter patterns CF2~CF5, CF7 difference all only one holes Hole, i.e. color filter patterns CF2 have hole with hole W, color filter patterns CF4 with hole V, color filter patterns CF3 Hole 10X, color filter patterns CF5 have hole Z with hole Y and color filter patterns CF7.However, the present invention and unlimited In this.In other embodiments, color filter patterns CF2~CF5, CF7 also can have more than one hole respectively.With Under, it 5 will be described in detail referring to Fig.1.

Figure 15 is the upper schematic diagram of the chromatic filter layer in the active component array base board of another embodiment of the present invention. Referring to Figure 15 and Figure 13, the chromatic filter layer 10CFL of chromatic filter layer 12CFL and Figure 13 of Figure 15 is similar, therefore phase Seemingly or identical component is indicated with similar or identical component symbol, and related description repeats no more.Hereinafter, putting up between the two Difference at explain, the two mutually exists together please according to the symbol in Fig. 1 to Fig. 4, Figure 13 referring to preceding description.

Figure 15 is please referred to, in the present embodiment, color filter patterns CF2 also includes hole other than comprising hole V 12V, Hole 12V are to be surround to form jointly by the color filter patterns CF2 and covering part CP6 of part.According to figure 1 above To the embodiment of Fig. 4, those skilled in the art should understand that the hole 12V in color filter patterns CF2 be also it is corresponding to Make the contact hole that pixel electrode is electrically connected with the drain and be arranged, and a part of the pixel electrode extends in hole 12V But it does not extend on covering part CP6.

In addition, in the present embodiment, covering part CP6 and color filter patterns CF1 are adjacent to each other.That is, In present embodiment, covering part CP6 and color filter patterns CF1 are same film layer, have identical material.

In addition, since covering part CP6 and color filter patterns CF1 are adjacent to each other, and color filter patterns CF1 is covered The color filter patterns CF2 of a part, therefore covering part CP6 can also cover the color filter patterns CF2 of a part.In detail and Speech, covering part CP6 and color filter patterns CF2 are partly be overlapped, and color filter patterns CF2's is Chong Die with covering part CP6 The part has curved profile Q.It is noted that in the present embodiment, after forming color filter patterns CF2 and It is formed before color filter patterns CF1, color filter patterns CF2 itself has an open hole, and is forming colorized optical filtering After pattern CF1, covering part CP6 is to cover a part of open hole and the curved profile Q and form hole Hole 12V.In this way, in the present embodiment, cover the curved profile Q by covering part CP6, colorized optical filtering can avoid The curved profile Q (i.e. the corner of color filter patterns CF2) of pattern CF2 ruptures in subsequent reliability-test, thus Improve reliability.

It is noted that with existing active component array base board phase that closed hole is arranged in color filter patterns Than there is open hole by color filter patterns CF2, so that the dot structure of collocation color filter patterns CF2 can have Preferable space utilization rate so as to improving aperture opening ratio, and parse the design of hole can not by the processing procedure of color filter patterns The limitation of degree.In this way, which the dot structure can be designed to lesser size, make whereby with chromatic filter layer The active component array base board of 12CFL can be effectively applied on high-res product.

In addition, in the present embodiment, covering part CP6 has opposite side 162a and side 162b, wherein covering part The side 110a of the side 162b and color filter patterns CF2 of CP6 are trimmed.In addition, in the present embodiment, covering part CP6's Minimum range u between side 162a and side 162b is 2 μm to 15 μm.

In addition, in the present embodiment, color filter patterns CF3 also includes hole 312W other than comprising hole W, Hole 12W is surrounded by color filter patterns CF3 and is formed.That is, in the present embodiment, hole 12W is one closed Hole.In addition, according to the embodiment of figure 1 above to Fig. 4, those skilled in the art should understand that in color filter patterns CF3 Hole 12W be also it is corresponding be arranged to the contact hole that is electrically connected with the drain pixel electrode, and the pixel electrode A part is extended in hole 12W but is not extended on color filter patterns CF3.

In addition, in the present embodiment, color filter patterns CF4 also includes hole 12X other than comprising hole 10X, Hole 12X is surrounded by color filter patterns CF4 and is formed.That is, in the present embodiment, hole 12X is one closed Hole.In addition, according to the embodiment of figure 1 above to Fig. 4, those skilled in the art should understand that in color filter patterns CF4 Hole 12X be also it is corresponding be arranged to the contact hole that is electrically connected with the drain pixel electrode, and the pixel electrode A part is extended in hole 12X but is not extended on color filter patterns CF4.

In addition, color filter patterns CF5 includes also hole 12Y, Hole 12Y is by part other than comprising hole Y Color filter patterns CF5 and covering part 2CP5 jointly around forming.According to the embodiment of figure 1 above to Fig. 4, this field Technical staff is, it is to be appreciated that the hole 12Y in color filter patterns CF5 is also corresponding connect pixel electrode electrically with drain electrode The contact hole that connects and be arranged, and a part of the pixel electrode extends in hole 12Y but does not extend to covering part 2CP5 On.

In addition, in the present embodiment, covering part 2CP5 and color filter patterns CF7 are adjacent to each other.That is, In present embodiment, covering part 2CP5 and color filter patterns CF7 are same film layer, have identical material.

Furthermore, since covering part 2CP5 and color filter patterns CF7 are adjacent to each other, and color filter patterns CF7 covers the color filter patterns CF5 of a part, therefore covering part 2CP5 can also cover the color filter patterns of a part CF5.Specifically, covering part 2CP5 and color filter patterns CF5 are partly be overlapped, and color filter patterns CF5 with covering The part of portion 2CP5 overlapping has curved profile Q.It is noted that in the present embodiment, forming colorized optical filtering After pattern CF5 and being formed before color filter patterns CF7, color filter patterns CF5 itself has an open hole, and It is formed after color filter patterns CF7, covering part 2CP5 is the open hole and the arc for covering a part Profile Q and form hole 12Y.In this way, in the present embodiment, the curved profile Q is covered by covering part 2CP5, The curved profile Q (i.e. the corner of color filter patterns CF5) of color filter patterns CF5 be can avoid in subsequent reliability-test It ruptures, thus improves reliability.

It is noted that with existing active component array base board phase that closed hole is arranged in color filter patterns Than there is open hole by color filter patterns CF5, so that the dot structure of collocation color filter patterns CF5 can have Preferable space utilization rate so as to improving aperture opening ratio, and parse the design of hole can not by the processing procedure of color filter patterns The limitation of degree.In this way, which the dot structure can be designed to lesser size, make whereby with chromatic filter layer The active component array base board of 12CFL can be effectively applied on high-res product.

In addition, in the present embodiment, covering part 2CP5 has opposite side 252a and side 252b, wherein covering part The side 130a of the side 252b and color filter patterns CF5 of 2CP5 are trimmed.In addition, in the present embodiment, covering part 2CP5 Side 252a and side 252b between minimum range u be 2 μm to 15 μm.

In addition, in the embodiment of earlier figures 13, Figure 14 and Figure 15, the two sides being oppositely arranged of any covering part it Between minimum range u be all 2 μm to 15 μm, such as the minimum range u between the side 152a and side 152b of covering part CP5 is 2 μm to 15 μm.However, the present invention is not limited thereto.In other embodiments, between the two sides of covering part being oppositely arranged Minimum range u be also possible to be situated between other ranges.Hereinafter, 6 to Figure 21 will be described in detail referring to Fig.1.

Figure 16 is the upper schematic diagram of the chromatic filter layer in the active component array base board of another embodiment of the present invention. Referring to Figure 16 and Figure 13, the chromatic filter layer 10CFL of chromatic filter layer 13CFL and Figure 13 of Figure 16 is similar, therefore phase Seemingly or identical component is indicated with similar or identical component symbol, and related description repeats no more.Hereinafter, putting up between the two Difference at explain, the two mutually exists together please according to the symbol in Fig. 1 to Fig. 4, Figure 13 referring to preceding description.

Specifically, referring to Figure 16 and Figure 13, the chromatic filter layer of the chromatic filter layer 13CFL and Figure 13 of Figure 16 Difference between 10CFL essentially consists in: in the embodiment of Figure 16, between the side 112a and side 112b of covering part CP1 Minimum range u, covering part CP2 side 122a and side 122b between minimum range u, covering part CP3 side 132a Minimum range u between the side 152a and side 152b of minimum range u and covering part CP5 between the 132b of side is all Between 5 μm to 25 μm；And in the embodiment of Figure 13, between the side 112a and side 112b of covering part CP1 most Small distance u, covering part CP2 side 122a and side 122b between minimum range u, covering part CP3 side 132a and side Minimum range u between the side 152a and side 152b of minimum range u and covering part CP5 between the 132b of side is all between 2 μm between 15 μm.

It is worth noting that in the present embodiment, by between the side 112a and side 112b of covering part CP1 most Small distance u, covering part CP2 side 122a and side 122b between minimum range u, covering part CP3 side 132a and side Minimum range u between the side 152a and side 152b of minimum range u and covering part CP5 between the 132b of side is all between 5 μm between 25 μm, covering part CP1, covering part CP2, covering part CP3 and covering part CP5 is enabled more completely to cover coloured silk The corner of color filter pattern CF2, color filter patterns CF3, color filter patterns CF4 and color filter patterns CF5, whereby more Further increase reliability.

Figure 17 is the upper schematic diagram of the chromatic filter layer in the active component array base board of another embodiment of the present invention. Referring to Figure 17 and Figure 14, the chromatic filter layer 11CFL of chromatic filter layer 14CFL and Figure 14 of Figure 17 is similar, therefore phase Seemingly or identical component is indicated with similar or identical component symbol, and related description repeats no more.Hereinafter, putting up between the two Difference at explain, the two mutually exists together please according to the symbol in Fig. 1 to Fig. 4, Figure 13 and Figure 14 referring to preceding description.

Specifically, referring to Figure 17 and Figure 14, the chromatic filter layer of the chromatic filter layer 14CFL and Figure 14 of Figure 17 Difference between 11CFL essentially consists in: in the embodiment in fig. 17, between the side 112a and side 112b of covering part CP1 Minimum range u, covering part CP3 side 132a and side 132b between minimum range u and covering part CP5 side Minimum range u between 152a and side 152b is all between 5 μm to 25 μm；And in the embodiment of Figure 14, covering part Minimum range u between the side 112a and side 112b of CP1, between the side 132a and side 132b of covering part CP3 most Minimum range u between the side 152a and side 152b of small distance u and covering part CP5 is all between 2 μm to 15 μm.

It is worth noting that in the present embodiment, by between the side 112a and side 112b of covering part CP1 most Small distance u, covering part CP3 side 132a and side 132b between minimum range u and covering part CP5 side 152a Minimum range u between the 152b of side is all between 5 μm to 25 μm, so that covering part CP1, covering part CP3 and covering part CP5 can more completely cover the corner of color filter patterns CF2, color filter patterns CF4 and color filter patterns CF5 Reliability is further improved at place whereby.

In addition, in the present embodiment, by minimum range u between the side 112a and side 112b of covering part CP1, Side 152a and the side of minimum range u and covering part CP5 between the side 132a and side 132b of covering part CP3 Minimum range u between 152b is all between 5 μm to 25 μm, so that hole 11W can be set compared with the embodiment of Figure 14 Set closer to hole V position and hole 11Z can be provided closer to the position of hole 10X.In this way, in this reality It applies in mode, the dot structure of collocation color filter patterns CF3 and color filter patterns CF7 can have preferable space utilization Rate, so as to improving aperture opening ratio.

Figure 18 is the upper schematic diagram of the chromatic filter layer in the active component array base board of another embodiment of the present invention. Referring to Figure 18 and Figure 15, the chromatic filter layer 12CFL of chromatic filter layer 15CFL and Figure 15 of Figure 18 is similar, therefore phase Seemingly or identical component is indicated with similar or identical component symbol, and related description repeats no more.Hereinafter, putting up between the two Difference at explain, the two mutually exists together please according to the symbol in Fig. 1 to Fig. 4, Figure 13 and Figure 15 referring to preceding description.

Specifically, referring to Figure 18 and Figure 15, the chromatic filter layer of the chromatic filter layer 15CFL and Figure 15 of Figure 18 Difference between 12CFL essentially consists in: in the embodiment of Figure 18, between the side 112a and side 112b of covering part CP1 Minimum range u, covering part CP2 side 122a and side 122b between minimum range u, covering part CP3 side 132a Minimum range u, covering part between the side 152a and side 152b of minimum range u, covering part CP5 between the 132b of side Minimum range u between the side 252a and side 252b of 2CP5 and between the side 162a and side 162b of covering part CP6 Minimum range u all between 5 μm to 25 μm；And in the embodiment of Figure 15, the side 112a of covering part CP1 and side Minimum range u's, covering part CP3 between the side 122a and side 122b of minimum range u, covering part CP2 between 112b Minimum range between the side 152a and side 152b of minimum range u, covering part CP5 between side 132a and side 132b U, side 162a and the side of the minimum range u between the side 252a and side 252b of covering part 2CP5 and covering part CP6 Minimum range u between 162b is all between 2 μm to 15 μm.

It is worth noting that in the present embodiment, by between the side 112a and side 112b of covering part CP1 most Small distance u, covering part CP2 side 122a and side 122b between minimum range u, covering part CP3 side 132a and side Minimum range u, covering part 2CP5 between the side 152a and side 152b of minimum range u, covering part CP5 between the 132b of side Side 252a and side 252b between minimum range u and covering part CP6 side 162a and side 162b between most Small distance u is all between 5 μm to 25 μm, so that covering part CP1, covering part CP2, covering part CP3, covering part CP5, covering part 2CP5 and covering part CP6 can more completely cover color filter patterns CF2, color filter patterns CF3, color filter patterns Reliability is further improved in the corner of CF4 and color filter patterns CF5 whereby.

In addition, in the present embodiment, by minimum range u between the side 112a and side 112b of covering part CP1, The side 132a and side 132b of minimum range u, covering part CP3 between the side 122a and side 122b of covering part CP2 it Between minimum range u, covering part CP5 side 152a and side 152b between minimum range u, covering part 2CP5 side Minimum range between the side 162a and side 162b of minimum range u and covering part CP6 between 252a and side 252b U is all between 5 μm to 25 μm, so that hole 12W can be provided closer to hole V's compared with the embodiment of Figure 15 Position, hole 12X can be provided closer to the position of hole W, hole 12Z can be provided closer to hole 10X position, And hole Z can be provided closer to the position of hole 12Y.In this way, in the present embodiment, colorized optical filtering figure of arranging in pairs or groups The dot structure of case CF3, color filter patterns CF4 and color filter patterns CF4 can have preferable space utilization rate, borrow To improve aperture opening ratio.

Figure 19 is the upper schematic diagram of the chromatic filter layer in the active component array base board of another embodiment of the present invention. Referring to Figure 19 and Figure 13, the chromatic filter layer 10CFL of chromatic filter layer 16CFL and Figure 13 of Figure 19 is similar, therefore phase Seemingly or identical component is indicated with similar or identical component symbol, and related description repeats no more.Hereinafter, putting up between the two Difference at explain, the two mutually exists together please according to the symbol in Fig. 1 to Fig. 4, Figure 13 referring to preceding description.

Specifically, referring to Figure 19 and Figure 13, the chromatic filter layer of the chromatic filter layer 16CFL and Figure 13 of Figure 19 Difference between 10CFL essentially consists in: the embodiment Hole V of Figure 19 adjacent to covering part CP1, hole W adjacent to The width U of the neighbouring covering part CP3 adjacent to covering part CP5 and hole Y of covering part CP2, hole 10X are smaller than Figure 13 Embodiment Hole V adjacent to covering part CP1, hole W adjacent to covering part CP2, hole 10X adjacent to covering The width U of the neighbouring covering part CP3 of portion CP5 and hole Y.

It is worth noting that as it was noted above, due to Figure 19 embodiment Hole V adjacent to covering part CP1, hole The width U of the neighbouring covering part CP3 adjacent to covering part CP5 and hole Y adjacent to covering part CP2, hole 10X of hole W The embodiment Hole V of smaller than Figure 13 adjacent to covering part CP1, hole W adjacent to covering part CP2, hole 10X Adjacent to the width U of the neighbouring covering part CP3 of covering part CP5 and hole Y, therefore in the embodiment of Figure 19, pass through covering Minimum range u between the side 112a and side 112b of portion CP1, between the side 122a and side 122b of covering part CP2 Minimum range u, covering part CP3 side 132a and side 132b between minimum range u and covering part CP5 side Minimum range u between 152a and side 152b all between 2 μm to 15 μm, that is, may make covering part CP1, covering part CP2, Covering part CP3 and covering part CP5 can be effective over live in color filter patterns CF2, color filter patterns CF3, colorized optical filtering The corner of pattern CF5 and color filter patterns CF5, so as to improving reliability.

Figure 20 is the upper schematic diagram of the chromatic filter layer in the active component array base board of another embodiment of the present invention. Referring to Figure 20 and Figure 14, the chromatic filter layer 11CFL of chromatic filter layer 17CFL and Figure 14 of Figure 20 is similar, therefore phase Seemingly or identical component is indicated with similar or identical component symbol, and related description repeats no more.Hereinafter, putting up between the two Difference at explain, the two mutually exists together please according to the symbol in Fig. 1 to Fig. 4, Figure 13 and Figure 14 referring to preceding description.

Specifically, referring to Figure 20 and Figure 14, the chromatic filter layer of the chromatic filter layer 17CFL and Figure 14 of Figure 20 Difference between 11CFL essentially consists in: the embodiment Hole V of Figure 20 adjacent to covering part CP1, hole 10X it is neighbouring The neighbouring of the embodiment Hole V of Figure 14 is smaller than in the width U of the neighbouring covering part CP3 of covering part CP5 and hole Y In the width U of the neighbouring covering part CP3 adjacent to covering part CP5 and hole Y of covering part CP1, hole 10X.

It is worth noting that as it was noted above, due to Figure 20 embodiment Hole V adjacent to covering part CP1, hole In the embodiment that the width U of the neighbouring covering part CP3 adjacent to covering part CP5 and hole Y of hole 10X is smaller than Figure 14 The width of the neighbouring covering part CP3 adjacent to covering part CP5 and hole Y adjacent to covering part CP1, hole 10X of hole V U is spent, therefore in the embodiment of Figure 20, by minimum range u between the side 112a and side 112b of covering part CP1, is covered The side 152a and side 152b of minimum range u and covering part CP5 between the side 132a and side 132b of cover CP3 Between minimum range u all between 2 μm to 15 μm, that is, may make covering part CP1, covering part CP3 and covering part CP5 energy Enough corners effective over live in color filter patterns CF2, color filter patterns CF4 and color filter patterns CF5, so as to mentioning High-reliability.

Figure 21 is the upper schematic diagram of the chromatic filter layer in the active component array base board of another embodiment of the present invention. Referring to Figure 21 and Figure 15, the chromatic filter layer 12CFL of chromatic filter layer 18CFL and Figure 15 of Figure 21 is similar, therefore phase Seemingly or identical component is indicated with similar or identical component symbol, and related description repeats no more.Hereinafter, putting up between the two Difference at explain, the two mutually exists together please according to the symbol in Fig. 1 to Fig. 4, Figure 13 and Figure 15 referring to preceding description.

Specifically, referring to Figure 21 and Figure 15, the chromatic filter layer of the chromatic filter layer 18CFL and Figure 15 of Figure 21 Difference between 12CFL essentially consists in: the embodiment Hole V of Figure 21 adjacent to covering part CP1, hole W adjacent to Covering part CP2, the neighbouring covering part CP3 of hole Y, the neighbouring covering part CP5 of hole 10X, hole 12V neighbouring covering part CP6, And the width U adjacent to covering part 2CP5 of hole 12Y be smaller than the embodiment Hole V of Figure 15 adjacent to covering part Neighbouring covering part CP5, the hole adjacent to covering part CP2, the neighbouring covering part CP3 of hole Y, hole 10X of CP1, hole W The width U adjacent to covering part 2CP5 of the neighbouring covering part CP6 and hole 12Y of 12V.

It is worth noting that as it was noted above, due to Figure 21 embodiment Hole V adjacent to covering part CP1, hole The neighbour adjacent to covering part CP2, the neighbouring covering part CP3 of hole Y, the neighbouring covering part CP5 of hole 10X, hole 12V of hole W The width U adjacent to covering part 2CP5 of nearly covering part CP6 and hole 12Y is smaller than the embodiment Hole V's of Figure 15 Adjacent to the neighbouring covering of the neighbouring covering part CP3, hole 10X adjacent to covering part CP2, hole Y of covering part CP1, hole W The width U adjacent to covering part 2CP5 of portion CP5, the neighbouring covering part CP6 of hole 12V and hole 12Y, therefore Figure 21's In embodiment, pass through the side of minimum range u, covering part CP2 between the side 112a and side 112b of covering part CP1 Minimum range u between the side 132a and side 132b of minimum range u, covering part CP3 between 122a and side 122b, it covers Minimum range u between the side 152a and side 152b of cover CP5, between the side 252a and side 252b of covering part 2CP5 Minimum range u and covering part CP6 side 162a and side 162b between minimum range u all between 2 μm to 15 μm it Between, that is, aloow covering part CP1, covering part CP2, covering part CP3, covering part CP5, covering part 2CP5 and covering part CP6 Effective over live in color filter patterns CF2, color filter patterns CF3, color filter patterns CF4 and color filter patterns CF5 Corner, so as to improve reliability.

In conclusion passing through phase in a first direction in the active component array base board that above embodiment is proposed A color filter patterns in two color filter patterns of neighbour's setting include to be surround jointly by a part and covering part of itself Made of hole, and the covering part and another color filter patterns are adjacent, so that active component array base board can have well Aperture opening ratio and reliability, and can be applied on high-res product.

Although the present invention is as above with embodiment explanation, it is not intended to limit the invention, any this field skill Art personnel, without departing from the spirit and scope of the invention, when can make some changes and embellishment, therefore protection scope of the present invention Subject to the range of view appended claims.

Claims

1. a kind of active component array base board, comprising:

One substrate；

Multi-strip scanning line and multiple data lines are located on the substrate, wherein every scan line extends along a first direction, it is each Data line extends along a second direction, and the first direction and the second direction are staggered；

One first dot structure and one second dot structure, are disposed adjacent on the substrate and along the first direction, wherein should First dot structure and second dot structure respectively with one of the multi-strip scanning line and the multiple data lines One of be electrically connected, which includes one first active member and one first pixel electrode, and this Two dot structures include one second active member and one second pixel electrode；And

One first color filter patterns and one second color filter patterns, on the substrate and respectively correspond the first pixel knot Structure and second dot structure setting, wherein first color filter patterns include one first hole, and first hole be by Partially first color filter patterns and one first covering part are surround jointly forms, and first covering part and second colour Filter pattern is adjacent and is same film layer.

2. active component array base board as described in claim 1, wherein a part of first pixel electrode extend to this In one hole and do not extend in first covering part.

3. active component array base board as described in claim 1, wherein second color filter patterns and first colored filter Light pattern partly overlaps.

4. active component array base board as claimed in claim 3, wherein first color filter patterns have a first side, First covering part has an opposite second side and a third side, wherein the first side and the second colorized optical filtering figure Case overlapping, and the third side is trimmed with the first side.

5. active component array base board as claimed in claim 4, wherein first covering part and first color filter patterns Overlapping, and the part Chong Die with first covering part of first color filter patterns has curved profile.

6. active component array base board as claimed in claim 4, the wherein minimum between the second side and the third side Distance is 2 μm to 15 μm.

7. active component array base board as claimed in claim 4, the wherein minimum between the second side and the third side Distance is 5 μm to 25 μm.

8. active component array base board as described in claim 1, wherein first color filter patterns also include one second hole Hole, and second hole is to be surround to form jointly by part first color filter patterns and one second covering part.

9. active component array base board as described in claim 1, wherein the second color filter patterns include a third hole, and The third hole is surrounded by the second color filter patterns and is formed.

10. active component array base board as claimed in claim 9, wherein a part of second pixel electrode extend to this In three holes and do not extend in second color filter patterns.

11. active component array base board as claimed in claim 9, wherein second color filter patterns also include one the 4th hole Hole, and the 4th hole is surrounded by the second color filter patterns and is formed.