CN115079476B

CN115079476B - Color resistance overlapping measurement method of array substrate

Info

Publication number: CN115079476B
Application number: CN202210551410.XA
Authority: CN
Inventors: 陈胜尧; 金琪; 李娜; 康报虹
Original assignee: HKC Co Ltd; Chuzhou HKC Optoelectronics Technology Co Ltd
Current assignee: HKC Co Ltd; Chuzhou HKC Optoelectronics Technology Co Ltd
Priority date: 2022-05-18
Filing date: 2022-05-18
Publication date: 2023-09-22
Anticipated expiration: 2042-05-18
Also published as: CN115079476A

Abstract

The application relates to a color resistance overlapping measurement method of an array substrate, which comprises the following steps: providing an array substrate, wherein the array substrate comprises a substrate, a driving array layer formed on the substrate and a color resistance layer positioned on one side of the driving array layer, which is far away from the substrate, the color resistance layer comprises a plurality of color resistance units, two adjacent color resistance units are overlapped with each other along a first direction, and orthographic projection of an overlapping area of the two adjacent color resistance units on the substrate covers orthographic projection of a data line on the substrate, wherein at least part of non-overlapping areas of the color resistance units are provided with openings; measuring the distance between the openings of two adjacent color resistance units; if the difference between the distance and the preset distance is smaller than or equal to the allowable error, determining that the overlapping width of the color resistance units meets the design requirement. The application can timely check and adjust when the color resistance is abnormal, effectively measure the overlapping width dimension of two adjacent color resistance units and improve the qualification rate of the array substrate.

Description

Color resistance overlapping measurement method of array substrate

Technical Field

The application relates to the technical field of display, in particular to a color resistance overlapping measurement method of an array substrate.

Background

The COA (Color-filter on Array) technology is an integrated technology in which a Color filter is directly fabricated on an Array substrate, so that an alignment error between the Color filter substrate and the Array substrate can be reduced. In addition, a data line is arranged between the adjacent color filters, and a BM (Black Matrix) is arranged between the color film substrate side corresponding to the adjacent color filters, and is used for shading the data line so as to improve the contrast of the liquid crystal display panel.

The DBS (data BM Less) technology is to cancel BM above the data line on the basis of COA, set transparent shielding public electrode on the side of the array substrate to shield electric field above the data line, and make the potential of the shielding public electrode identical to that of the public electrode on the color film substrate, so that the corresponding liquid crystal molecules above the data line are always kept in undeflected state, and further the shading effect is achieved.

Because the shielding public electrode is close to the metal layer where the data line is located, the capacitance of the metal layer is shared by the shielding public electrode, so that the metal layer is insufficient in power supply and easy to generate parasitic capacitance, and the color filters are required to be overlapped with each other, so that a certain space distance exists between the shielding public electrode and the metal layer. However, there are metal layers and color differences in the overlapping region of the color filter, and the overlapping width dimension cannot be effectively measured.

Disclosure of Invention

The application aims to provide a color resistance overlapping measuring method of an array substrate, which can effectively measure the overlapping width dimension of color resistance.

In a first aspect, an embodiment of the present application provides an array substrate, including a substrate, a driving array layer formed on the substrate, and a color resist layer located on a side of the driving array layer facing away from the substrate, where the driving array layer includes a plurality of scan lines extending along a first direction and a plurality of data lines extending along a second direction, and the first direction and the second direction are intersected with each other; the color resistance layer comprises a plurality of color resistance units, two adjacent color resistance units are overlapped with each other along a first direction, and orthographic projection of an overlapped area of the two adjacent color resistance units on the substrate covers orthographic projection of a data line on the substrate, wherein at least part of non-overlapped areas of the color resistance units are provided with openings.

In one possible embodiment, the color resist units are strip-shaped structures extending along the second direction, each strip-shaped structure comprises a flat portion and a gradient portion located on at least one side of the flat portion along the first direction, the thickness of the gradient portion is gradually reduced along a direction away from the flat portion, two adjacent color resist units are overlapped through the gradient portion, and the opening is formed in the flat portion.

In one possible embodiment, the number of openings of each color resist unit is at least two, and the at least two openings are staggered on the flat portion along the first direction and the second direction.

In one possible embodiment, the opening is rectangular in shape.

In one possible embodiment, the plurality of color resist units includes a red color resist unit, a green color resist unit, and a blue color resist unit.

In a second aspect, an embodiment of the present application further provides a method for measuring color resistance overlapping of an array substrate, including: providing an array substrate as described above; measuring the distance between the openings of two adjacent color resistance units; if the difference between the distance and the preset distance is smaller than or equal to the allowable error, determining that the overlapping width of the color resistance units meets the design requirement.

In one possible embodiment, measuring the distance between the openings of two adjacent color resist units further comprises: the openings are rectangular in shape, and the distance between the openings of two adjacent color resistance units is the distance between the same side edges of the openings of two adjacent color resistance units.

In one possible embodiment, the number of openings of each color resist unit is at least two, and measuring the distance between the openings of two adjacent color resist units further includes: measuring the distance between different openings of two adjacent color resistance units for multiple times; the distance between the openings of two adjacent color resist units is determined according to the average value of the measured distances.

In a third aspect, an embodiment of the present application further provides a method for manufacturing an array substrate, including: providing a substrate; forming a driving array layer on a substrate, the driving array layer including a plurality of scan lines extending in a first direction and a plurality of data lines extending in a second direction, the first direction intersecting the second direction; and forming a patterned color resistance layer on the driving array layer, wherein the color resistance layer comprises a plurality of color resistance units, two adjacent color resistance units are overlapped with each other along a first direction, the orthographic projection of the overlapped area of the two adjacent color resistance units on the substrate covers the orthographic projection of the data line on the substrate, and at least part of non-overlapped areas of the color resistance units are provided with openings.

In one possible embodiment, forming a patterned color resist layer on the drive array layer includes: coating a plurality of color resistance units with the same color on the driving array layer, wherein the positions of openings of the color resistance units are positive photoresist, and the areas outside the openings are negative photoresist; a plurality of color resist units of the same color are formed by exposure and development.

According to the color resistance overlapping measurement method of the array substrate, provided by the embodiment of the application, the opening is arranged in the non-overlapping area of at least part of the color resistance units of the color resistance layer, and the distance between the openings of two adjacent color resistance units is measured, so that whether the overlapping width dimension of the color resistance units meets the design requirement can be indirectly measured, and therefore, the adjustment can be checked and regulated in time when the color resistance is abnormal, the overlapping width dimension of the two adjacent color resistance units is effectively measured, and the qualification rate of the array substrate is improved.

Drawings

Features, advantages, and technical effects of exemplary embodiments of the present application will be described below with reference to the accompanying drawings. In the drawings, like parts are designated with like reference numerals. The drawings are not drawn to scale, but are merely for illustrating relative positional relationships, and the layer thicknesses of certain portions are exaggerated in order to facilitate understanding, and the layer thicknesses in the drawings do not represent the actual layer thickness relationships.

Fig. 1 is a schematic view showing a structure of a liquid crystal display panel in the related art;

fig. 2 shows a flowchart of a color resistance overlapping measurement method of an array substrate according to an embodiment of the present application;

fig. 3 is a schematic structural diagram of an array substrate according to an embodiment of the present disclosure;

FIG. 4 shows a cross-sectional view of the color resist layer of FIG. 3;

FIG. 5 shows a top view of the color resist layer of FIG. 3;

fig. 6 shows a flowchart of a method for manufacturing an array substrate according to an embodiment of the present application.

Reference numerals illustrate:

1. a substrate base; 2. driving the array layer; 3. a color resist layer;

21. a first metal layer; 211. a scanning line; 122. a common electrode line; 123. a gate;

23. a gate insulating layer;

22. a second metal layer; 221. a data line; 142. a source electrode; 143. a drain electrode;

24. an interlayer insulating layer;

31. a color resistance unit; 31R, red color resistance unit; 31B, blue resistance unit; 31G, green resistance unit; 31a, openings; 311. a flat portion; 312. a slope portion;

4. a transparent conductive layer; 41. pixel electrodes 42, shielding common electrodes;

5. a first alignment film;

10. an array substrate; 20. an opposite substrate; 201. a counter substrate; 202. an opposite common electrode; 203. a second alignment film; 30. and a liquid crystal layer.

Detailed Description

Features and exemplary embodiments of various aspects of the application are described in detail below. In the following detailed description, numerous specific details are set forth in order to provide a thorough understanding of the application. It will be apparent, however, to one skilled in the art that the present application may be practiced without some of these specific details. The following description of the embodiments is merely intended to provide a better understanding of the application by showing examples of the application. In the drawings and the following description, at least some well-known structures and techniques have not been shown in detail in order not to unnecessarily obscure the present application; also, the size of the region structures may be exaggerated for clarity. Furthermore, the described features, structures, or characteristics may be combined in any suitable manner in one or more embodiments.

Fig. 1 shows a schematic structure of a liquid crystal display panel in the related art.

As shown in fig. 1, the liquid crystal display panel in the related art includes: an array substrate 10, a counter substrate 20 disposed opposite to the array substrate 10, and a liquid crystal layer 30 disposed between the array substrate 10 and the counter substrate 20. The liquid crystal layer 30 includes a plurality of liquid crystal molecules, typically rod-shaped, that both flow like a liquid and have certain crystal characteristics. When the liquid crystal molecules are in an electric field, the alignment direction thereof is changed according to the change of the electric field.

Since the liquid crystal display panel is a non-emissive light receiving element, a light source is required to be provided by a backlight module disposed on one side of a backlight surface thereof. The liquid crystal display panel controls the rotation of the liquid crystal molecules of the liquid crystal layer 30 by applying a driving voltage to the array substrate 10 and the opposite substrate 20, so as to refract the light provided by the backlight module to generate a picture. In order to display a color picture, a thin film transistor array is generally prepared on the array substrate 10 for driving rotation of liquid crystal molecules to control display of each sub-pixel.

As shown in fig. 1, the counter substrate 20 includes a counter substrate 201, a counter common electrode 202 provided on the counter substrate 201, and a second alignment film 203 provided on the counter common electrode 202.

The array substrate 10 adopts a COA technology and a DBS architecture, and comprises a substrate 1, a driving array layer 2 formed on the substrate 1, a color resistance layer 3 positioned on one side of the driving array layer 2 away from the substrate 1, a transparent conductive layer 4 positioned on one side of the color resistance layer 3 away from the substrate 1, and a first alignment film 5 positioned on one side of the transparent conductive layer 4 away from the substrate 1.

The driving array layer 2 includes a plurality of scan lines 211 extending in a first direction X and a plurality of data lines 221 extending in a second direction Y, the first direction X intersecting the second direction Y.

The color resist layer 3 is used for forming the color of each sub-pixel, and includes a plurality of color resist units 31, two adjacent color resist units 31 overlap each other along the first direction X, and the orthographic projection of the overlapping area of the two adjacent color resist units 31 on the substrate 1 covers the orthographic projection of the data line 221 on the substrate 1.

The transparent conductive layer 4 includes a pixel electrode 41 and a shielding common electrode 42 which are isolated and insulated from each other, and the orthographic projection of the shielding common electrode 42 on the substrate 1 covers the orthographic projection of the data line 221 on the substrate 1, is used for shielding the electric field above the data line 221, and makes the electric potential of the shielding common electrode 42 be the same as the electric potential of the opposite common electrode 202 on the opposite substrate 20, so that the corresponding liquid crystal molecules above the data line 221 are always kept in an undeflected state, and further, the light shielding effect is achieved instead of BM.

When the thin film transistor of the array substrate 10 is turned on by a signal applied to the gate electrode, a signal applied to the data line 221 is applied to the pixel electrode 41. Thereby, an electric field of a predetermined intensity is generated between the pixel electrode 41 and the opposite common electrode 202, and the application of different voltages can change the orientation of the liquid crystal molecules, thereby adjusting the transmittance of light and displaying an image.

Since the shielding common electrode 42 is close to the metal layer where the data line 221 is located, the capacitance of the metal layer is shared by the shielding common electrode 42, so that the metal layer is not sufficiently supplied with power and parasitic capacitance is easily generated, so that two adjacent color resistance units 31 of the color resistance layer 3 need to be overlapped with each other, so that a certain space distance exists between the shielding common electrode 42 and the metal layer. However, there are metal layers and color differences in the overlapping region of two adjacent color resist units 31, and the overlapping width dimension cannot be effectively measured.

Therefore, the embodiment of the application provides a color resistance overlapping measurement method of an array substrate, and the detailed description of the embodiment is given below with reference to the accompanying drawings.

Fig. 2 shows a flowchart of a color resistance overlapping measurement method of an array substrate provided by an embodiment of the present application, fig. 3 shows a schematic structural diagram of the array substrate provided by the embodiment of the present application, fig. 4 shows a cross-sectional view of the color resistance layer in fig. 3, and fig. 5 shows a top view of the color resistance layer in fig. 3.

As shown in fig. 2, an embodiment of the present application provides a method for measuring color resistance overlapping of an array substrate, which includes the following steps S1 to S3.

Step S1: an array substrate is provided.

As shown in fig. 3, an embodiment of the present application provides an array substrate, including a substrate 1, a driving array layer 2 formed on the substrate 1, and a color resist layer 3 located on a side of the driving array layer 2 facing away from the substrate 1, where the driving array layer 2 includes a plurality of scan lines 211 extending along a first direction X and a plurality of data lines 221 extending along a second direction Y, and the first direction X and the second direction Y intersect each other; the color resist layer 3 includes a plurality of color resist units 31, two adjacent color resist units 31 overlap each other along the first direction X, and orthographic projections of overlapping areas of the two adjacent color resist units 31 on the substrate 1 cover orthographic projections of the data lines 221 on the substrate 1, wherein at least a non-overlapping area of the color resist units 31 is provided with an opening 31a.

The array substrate is similar to the array substrate 10 in the related art, except that the transparent conductive layer 4, the first alignment film 5 and other film structures are not disposed above the color resist layer 3, and the non-overlapping area of at least part of the color resist units 31 of the color resist layer 3 is provided with an opening 31a. That is, the preparation process of each film layer between the color resist layer 3 and the substrate 1 of the array substrate is the same as the preparation process of the corresponding film layer of the array substrate 10 in the related art, only that at least part of the non-overlapping region of the color resist unit 31 is provided with the opening 31a, and the opening 31a and the rest of the color resist unit 31 are simultaneously formed through the process steps of exposure, development, etc., so that the same process step as the actual array substrate 10 can be simultaneously performed.

Step S2: the distance between the openings 31a of the adjacent two color resist units 31 is measured.

As described above, since the manufacturing process of the array substrate is the same as that of the actual array substrate 10, and the shielding common electrode 42 of the transparent conductive layer 4 is not shielded, and the openings 31a of the color resist units 31 of the array substrate avoid the overlapping area, there is no color difference, the distance between the openings 31a of the adjacent two color resist units 31 can be measured by, for example, a three-dimensional image measuring instrument, and the change in the distance is consistent with the change in the overlapping width of the adjacent two color resist units 31 in the actual array substrate 10, the accuracy of the overlapping width of the adjacent two color resist units 31 can be determined by such an indirect measurement.

Step S3: if the difference between the distance and the preset distance is smaller than or equal to the allowable error, it is determined that the overlapping width of the color resist units 31 meets the design requirement.

The three-dimensional image measuring instrument can be a three-dimensional laser scanner, and the object to be measured is scanned by emitting laser so as to obtain the three-dimensional coordinates of the surface of the object to be measured. The three-dimensional laser scanning technology is also called as a live-action copying technology, and has the advantages of high efficiency and high precision in measurement. If the difference between the measured distance between the openings 31a of the two adjacent color resistance units 31 and the preset distance is larger than the allowable error, it can be determined that the overlapping width of the color resistance units 31 in the actual product does not meet the design requirement, so that the adjustment can be checked and checked in time when the color resistance is abnormal, the overlapping width size of the two adjacent color resistance units can be effectively measured, and the qualification rate of the array substrate is improved.

According to the array substrate and the color resistance overlapping measurement method of the array substrate, provided by the embodiment of the application, the opening 31a is arranged in the non-overlapping area of at least part of the color resistance units 31 of the color resistance layer 3, and the distance between the openings 31a of two adjacent color resistance units 31 is measured to indirectly measure whether the overlapping width dimension of the color resistance units 31 meets the design requirement, so that the overlapping width dimension of the color resistance units 31 can be checked and adjusted in time when the color resistance is abnormal, the overlapping width dimension of the color resistance units 31 is effectively measured, and the qualification rate of the array substrate is improved.

Further, in step S2, measuring the distance between the openings 31a of the adjacent two color resist units 31 includes:

the openings 31a are rectangular in shape, and the distance between the openings 31a of two adjacent color resist units 31 is the distance between the same side edges of the openings 31a of two adjacent color resist units 31.

In some embodiments, the plurality of color resist units 31 includes a red color resist unit 31R, a green color resist unit 31G, and a blue color resist unit 31B. In other embodiments, the plurality of color-blocking units 31 may further include color-blocking units of other colors, such as yellow or white, and the like, which are not described herein again according to specific design requirements.

In some embodiments, the color resist units 31 are strip-shaped structures extending along the second direction Y, and include a flat portion 311 and a slope portion 312 located on at least one side of the flat portion 311 along the first direction X, wherein the thickness of the slope portion 312 is gradually reduced along a direction away from the flat portion 311, two adjacent color resist units 31 overlap each other through the slope portion 312, and an opening 31a is formed in the flat portion 311.

The accuracy of the overlap width between two adjacent color resist units 31 is related to the following factors: the single-sided process error of each of the two adjacent color resist units 31, the alignment process error of the two adjacent color resist units 31 and the data line 221, the process error of the slope portions 312 of the two adjacent color resist units 31, and the minimum overlap width process error between the two adjacent color resist units 31. Since the flat portion 311 has a flat structure, the openings 31a are located in the flat portion 311, and the measurement accuracy of the distance between the openings 31a of the adjacent two color resist units 31 can be improved.

As shown in fig. 4 and 5, the color resist layer 3 includes a red color resist unit 31R, a green color resist unit 31G, and a blue color resist unit 31B, wherein a slope portion 312 of the red color resist unit 31R and a slope portion 312 of one side of the blue color resist unit 31B in the first direction X overlap each other, and the accuracy of the overlapping width thereof can be determined by indirectly measuring a distance W1 between the same side edges of the rectangular opening 31a of the red color resist unit 31R and the rectangular opening 31a of the blue color resist unit 31B.

The slope portion 312 of the other side of the blue resist unit 31B in the first direction X and the slope portion 312 of the green resist unit 31G overlap each other, and the accuracy of the overlapping width thereof can be determined by indirectly measuring the distance W2 between the rectangular opening 31a of the green resist unit 31G and the same side edge of the rectangular opening 31a of the blue resist unit 31B.

As described above, the accuracy of the overlapping width between two adjacent color resist units 31 is related to many factors, and considering that the manufacturing process of the color resist units 31 with different colors may have different manufacturing errors, the distances between the openings 31a of the adjacent color resist units 31 with two different colors in the red color resist unit 31R, the green color resist unit 31G and the blue color resist unit 31B can be measured at the same time, so that it is not necessary to separately measure the distances between the openings 31a of the color resist units 31 with two different colors, the measurement times are reduced, and the measurement efficiency is improved.

In some embodiments, the number of the openings 31a of each color resist unit 31 is at least two, and the at least two openings 31a are staggered along the first direction X and the second direction Y on the flat portion 311.

As shown in fig. 5, the red color resist unit 31R, the green color resist unit 31G, and the blue color resist unit 31B are provided with 3 openings 31a, respectively, and the overlapping width dimension of the adjacent two color resist units 31 can be measured by measuring the distance between any two openings 31a of the adjacent two color resist units 31.

In some embodiments, the number of the openings 31a of each color resist unit 31 is at least two, and in step S2, measuring the distance between the openings 31a of the adjacent two color resist units 31 further includes:

the distances between the different openings 31a of the adjacent two color resist units 31 are measured a plurality of times, and the distances between the openings 31a of the adjacent two color resist units 31 are determined from the average of the measured distances.

Thus, by measuring a plurality of sets of distance values and calculating an average value to determine the overlapping width dimensions of the adjacent two color resist units 31, the measurement accuracy can be further improved.

As shown in fig. 6, the preparation method of the array substrate provided by the embodiment of the application includes the following steps R1 to R3.

Step R1: providing a substrate 1; the substrate 1 may be glass or polyimide PI.

Step R2: forming a driving array layer 2 on a substrate 1, the driving array layer 2 including a plurality of scan lines 21 extending in a first direction X and a plurality of data lines 22 extending in a second direction Y, the first direction X intersecting the second direction Y;

step R3: a patterned color resist layer 3 is formed on the driving array layer 2, the color resist layer 3 includes a plurality of color resist units 31, two adjacent color resist units 31 overlap each other along the first direction X, and orthographic projection of overlapping areas of the two adjacent color resist units 31 on the substrate 1 covers orthographic projection of the data line 22 on the substrate 1, and at least a non-overlapping area of part of the color resist units 31 is provided with an opening 31a.

Since the array substrate is similar to the array substrate 10 in the related art, the difference is that there is no film structure such as the transparent conductive layer 4 and the first alignment film 5 above the color resist layer 3, and at least part of the non-overlapping area of the color resist unit 31 of the color resist layer 3 is provided with an opening 31a. That is, the preparation process of each film layer between the color resist layer 3 and the substrate 1 of the array substrate is the same as that of the corresponding film layer of the array substrate 10 in the related art, except that at least part of the non-overlapping regions of the color resist units 31 are provided with the openings 31a, so that the array substrate for testing can be prepared simultaneously with the actual array substrate 10 product in the same process.

Further, in step R3, forming the patterned color resist layer 3 on the driving array layer 2 includes:

coating a plurality of color resistance units 31 with the same color on the driving array layer 2, wherein the positions of openings 31a of the color resistance units 31 are positive photoresist, and the areas except for the openings 31a are negative photoresist; a plurality of color resist units 31 of the same color are formed by exposure and development.

The color resist units 31 of different colors generally disperse pigments of a certain color in a photoresist solvent to form a photoresist of a certain color, then the photoresist of the certain color is coated on the prepared substrate 1, and then the required patterns are prepared after the processes of exposure and development are sequentially carried out.

Photoresists are organic compounds, which are classified into positive photoresists and negative photoresists according to the relationship between the crosslinking reaction in the photoresist and ultraviolet rays. For positive photoresist, the photoresist in the area irradiated by ultraviolet rays undergoes crosslinking decomposition reaction, and the part can be dissolved in a developing solution; for negative photoresist, the photoresist in the area irradiated by ultraviolet rays undergoes a crosslinking decomposition reaction, and this part is difficult to dissolve in the developer.

In this embodiment, a positive resist is applied to the position of the opening 31a of the resist unit 31 of a certain color, a negative resist is applied to the region other than the opening 31a, and a plurality of resist units 31 of the certain color are formed by exposure and development. Similarly, a plurality of color resist units 31 of different colors may be sequentially formed, and two adjacent color resist units 31 of different colors overlap each other along the first direction X, and the orthographic projection of the overlapping area of the two adjacent color resist units 31 on the substrate 1 covers the orthographic projection of the data line 22 on the substrate 1.

It can be understood that the array substrate and the technical solution of the color resistance overlapping measurement method of the array substrate provided by the embodiments of the present application can be widely used for various liquid crystal display panels, such as a TN (Twisted Nematic) display panel, an IPS (In-plane switching) display panel, a VA (vertical alignment) display panel, a MVA (Multi-Domain Vertical Alignment, multi-quadrant vertical alignment) display panel.

It should be readily understood that the terms "on … …", "above … …" and "above … …" in this disclosure should be interpreted in the broadest sense so that "on … …" means not only "directly on something" but also includes "on something" with intermediate features or layers therebetween, and "above … …" or "above … …" includes not only the meaning "on something" or "above" but also the meaning "above something" or "above" without intermediate features or layers therebetween (i.e., directly on something).

The term "substrate" as used herein refers to a material upon which subsequent layers of material are added. The substrate itself may be patterned. The material added atop the substrate may be patterned or may remain unpatterned. In addition, the substrate may comprise a wide range of materials, such as silicon, germanium, gallium arsenide, indium phosphide, and the like. Alternatively, the substrate may be made of a non-conductive material (e.g., glass, plastic, or sapphire wafer, etc.).

The term "layer" as used herein may refer to a portion of material that includes regions having a certain thickness. The layer may extend over the entire underlying or overlying structure, or may have a range that is less than the range of the underlying or overlying structure. Further, the layer may be a region of a continuous structure, either homogenous or non-homogenous, having a thickness less than the thickness of the continuous structure. For example, the layer may be located between the top and bottom surfaces of the continuous structure or between any pair of lateral planes at the top and bottom surfaces. The layers may extend laterally, vertically and/or along a tapered surface. The substrate base may be a layer, may include one or more layers therein, and/or may have one or more layers located thereon, and/or thereunder. The layer may comprise a plurality of layers. For example, the interconnect layer may include one or more conductors and contact layers (within which contacts, interconnect lines, and/or vias are formed) and one or more dielectric layers.

Finally, it should be noted that: the above embodiments are only for illustrating the technical solution of the present application, and not for limiting the same; although the application has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some or all of the technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit of the application.

Claims

1. The color resistance overlapping measurement method of the array substrate is characterized by comprising the following steps of:

providing an array substrate, wherein the array substrate comprises a substrate, a driving array layer formed on the substrate and a color resistance layer positioned on one side of the driving array layer away from the substrate, the driving array layer comprises a plurality of scanning lines extending along a first direction and a plurality of data lines extending along a second direction, and the first direction and the second direction are mutually intersected; the color resistance layer comprises a plurality of color resistance units, two adjacent color resistance units are overlapped with each other along the first direction, and orthographic projections of overlapped areas of the two adjacent color resistance units on the substrate cover orthographic projections of the data lines on the substrate, and the color resistance layer is characterized in that openings are formed in non-overlapped areas of at least part of the color resistance units;

measuring the distance between the openings of two adjacent color resistance units;

and if the difference value between the distance and the preset distance is smaller than or equal to the allowable error, determining that the overlapping width of the color resistance units meets the design requirement.

2. The color chart stacking measurement method according to claim 1, wherein the color chart units are strip-shaped structures extending along the second direction, each color chart unit comprises a flat part and a gradient part positioned on at least one side of the flat part along the first direction, the thickness of each gradient part is gradually reduced along the direction away from the flat part, two adjacent color chart units are mutually overlapped through the gradient parts, the openings are formed in the flat part, and the openings are rectangular in shape;

the measuring the distance between the openings of two adjacent color resistance units comprises:

the distance between the openings of two adjacent color resistance units is the distance between the same side edges of the openings of two adjacent color resistance units.

3. The color resist overlapping measurement method according to claim 2, wherein the number of the openings of each of the color resist units is at least two, the at least two openings are staggered in the first direction and the second direction on the flat portion, and the measuring the distance between the openings of the adjacent two color resist units further comprises:

measuring the distance between different openings of two adjacent color resistance units for multiple times;

the distance between the openings of two adjacent color resist units is determined according to the average value of the measured distances.

4. The color resistance overlay measurement method according to claim 1, wherein the plurality of color resistance units includes a red color resistance unit, a green color resistance unit, and a blue color resistance unit, and the measuring the distance between the openings of the adjacent two color resistance units includes:

and measuring the distance between the openings of the adjacent two color resistance units with different colors in the red color resistance unit, the green color resistance unit and the blue color resistance unit.

5. The method for measuring color gamut of claim 1, wherein providing an array substrate comprises: providing a substrate;

forming a driving array layer on the substrate, the driving array layer including a plurality of scan lines extending in a first direction and a plurality of data lines extending in a second direction, the first direction intersecting the second direction;

and forming a patterned color resistance layer on the driving array layer, wherein the color resistance layer comprises a plurality of color resistance units, two adjacent color resistance units are overlapped with each other along the first direction, the orthographic projection of the overlapped area of the two adjacent color resistance units on the substrate covers the orthographic projection of the data line on the substrate, and at least part of non-overlapped areas of the color resistance units are provided with openings.

6. The method of claim 5, wherein forming a patterned color resist layer on the drive array layer comprises:

coating a plurality of color resistance units with the same color on the driving array layer, wherein the positions of the openings of the color resistance units are positive photoresist, and the areas outside the openings are negative photoresist;

and forming a plurality of color resistance units with the same color through exposure and development.