CN105958803A - Normally ON type and normally OFF type SiC JFET combined bridge arm power circuit and control method thereof - Google Patents
Normally ON type and normally OFF type SiC JFET combined bridge arm power circuit and control method thereof Download PDFInfo
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- CN105958803A CN105958803A CN201610342325.7A CN201610342325A CN105958803A CN 105958803 A CN105958803 A CN 105958803A CN 201610342325 A CN201610342325 A CN 201610342325A CN 105958803 A CN105958803 A CN 105958803A
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
- H02M1/088—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0048—Circuits or arrangements for reducing losses
- H02M1/0054—Transistor switching losses
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electronic Switches (AREA)
Abstract
The invention relates to a normally ON type and normally OFF type SiC JFET combined bridge arm power circuit and a control method thereof. The bridge arm power circuit is composed of a normally ON type SiC JFET, a normally OFF type SiC JFET, a driving circuit of a totem pole structure and a current source driving circuit. The bridge arm power circuit is characterized in that the advantages of high switching speed and low conduction loss of the normally ON type SiC JFET are fully utilized, and the normally OFF type SiC JFET is used to prevent a bridge arm direct connection phenomenon when a control circuit is electrified and the driving circuits do not provide grid voltage due to faults. The normally ON type and normally OFF type SiC JFET combined bridge arm power circuit can be widely applied to typical bridge arm circuits as a full-bridge circuit and a three-phase bridge type circuit. The combined bridge arm power circuit mainly has the advantages of being low in conduction loss and driving loss, capable of rapid switching and capable of preventing the bridge arm direct connection phenomenon.
Description
Technical field
The present invention relates to a kind of normal open type/nomal closed type SiC JFET combined brachium pontis power circuit and control method thereof, especially relate to a kind of speed-sensitive switch, low conduction loss and prevent the brachium pontis power circuit of bridge arm direct pass, belong to field of power electronics.
Background technology
SiC JFET is carborundum junction field effect transistor, has normal open (normally-on) and normal off (normally-off) two types.In recent years, normal open type SiC JFET with low on-resistance, fast switching speed, high temperature resistant, heat stability is high etc., and advantage becomes raising power converter efficiencies and the ideal component of power density.But, normal open type SiC JFET is the most in the conduction state when not driving signal, easily causes the straight-through danger of brachium pontis in widely used voltage source type converter.Comparing normal open type SiC JFET, nomal closed type SiC JFET and must maintain certain gate drive current when it turns on, to obtain less on state resistance, drive circuit loss is relatively large.At present document drives, for normal open type SiC JFET, the bridge arm circuit constituted, propose the scheme of several bridge arm direct pass protection.Fig. 1 is typical scenario therein, it is seen that this kind of bridge arm direct pass protection scheme complexity in circuits is high, also considerably increases cost.
Summary of the invention
The technical problem to be solved is for the defect in aforementioned background art and deficiency, a kind of combined brachium pontis power circuit based on normal open type/nomal closed type SiC JFET is provided, give full play to the advantage that normal open type SiC JFET switch speed is fast and conduction loss is little, and utilizing nomal closed type SiC JFET to prevent control circuit from powering on, drive circuit Loss of power failure does not provides bridge arm direct pass phenomenon during grid voltage.
Normal open type/nomal closed type SiC JFET combined brachium pontis power circuit that the present invention provides, including normal open type SiC JFET, nomal closed type SiC JFET, totem pole configuration drive circuit and driven with current sources circuit；Described totem pole configuration drive circuit and by switching tube and drive resistance be formed by connecting；Described driven with current sources electric routing switch pipe, driving resistance, diode and inductance connection form.
It is provided with totem pole configuration drive circuit between normal open type SiC JFET grid and power supply；It is provided with driven with current sources circuit between nomal closed type SiC JFET grid and power supply.
Described totem pole configuration drive circuit includes the first switching tube S1, second switch pipe S2, first drive resistanceR g1；First high-voltage power supply VCC1The most forward connect the first switching tube S1, second switch pipe S2, the first low pressure source VEE1；First switching tube S1, second switch pipe S2Intermediate point connect first driving resistanceR g1One end, first drive resistanceR g1The other end connect normal open type SiC JFET grid.
Described driven with current sources circuit includes the 3rd switching tube S3, the 4th switching tube S4, the 5th switching tube S5, the 6th switching tube S6, second drive resistanceR g2, the 3rd drive resistanceR g3 、Diode D and inductance L；
Second high-voltage power supply VCC2The most forward connect the second driving resistanceR g2, the 3rd switching tube S3, the 4th switching tube S4, the second low pressure source VEE2；3rd switching tube S3, the 4th switching tube S4Intermediate point connect the 3rd driving resistanceR g3One end, the 3rd drive resistanceR g3The other end connect nomal closed type SiC JFET grid；
Second high-voltage power supply VCC2The most forward connect the 5th switching tube S5, the 6th switching tube S6, the second low pressure source VEE2；5th switching tube S5, the 6th switching tube S6Intermediate point connect the positive pole of diode D, the negative pole of diode D connects the grid that the other end of inductance L, inductance L connects nomal closed type SiC JFET.
The control method of normal open type/nomal closed type SiC JFET combined brachium pontis power circuit, is characterized in that, turn on the first switching tube S1, the first high-voltage power supply VCC1Reduce conduction loss；Conducting second switch pipe S2, the first low pressure source VEE1And the first relatively low driving resistanceR g1Normal open type SiC JFET is made to obtain relatively switching speed；
Turn on the 4th switching tube S4, the 5th switching tube S5Conducting, driving voltage is the second low pressure source VEE2, nomal closed type SiC JFET turns off, inductance L energy storage before opening；Turn on the 3rd switching tube S3, the 5th switching tube S5, driving voltage is the second high-voltage power supply VCC2, inductance L provides peak drive current to nomal closed type SiC JFET grid；After inductance L has discharged, the second high-voltage power supply VCC2Resistance is driven by secondR g2Resistance is driven with the 3rdR g3Steady-state current is provided.
A kind of normal open type of the present invention/nomal closed type SiC JFET mixing brachium pontis drive circuit and control method thereof, can solve following three aspect problems: (1) realizes high-speed switching capability simultaneously；(2) can effectively reduce the conduction loss of switching device, switching loss and drive loss；(3) prevent from not providing bridge arm direct pass phenomenon during driving voltage without extra protection circuit.
Accompanying drawing explanation
Fig. 1 is normal open of the prior art type/nomal closed type SiC JFET combined brachium pontis power circuit structure chart；
Fig. 2 is normal open of the present invention type/nomal closed type SiC JFET combined brachium pontis power circuit figure；
Fig. 3 is auxiliary switch and normal open type/nomal closed type SiC JFET driving voltage sequential chart in the present invention；
In figure: Q1-normal open type SiC JFET, Q2The afterflow inductance of-nomal closed type SiC JFET, L-nomal closed type SiC JFET, D-antireflux diode, S1To S6-the first to the 6th switching tube, Rg1-the first drives the resistance i.e. driving resistance of normal open type SiC JFET, Rg2-the second drives resistance i.e. pull-up resistor, Rg3-the three drives the resistance i.e. driving resistance of nomal closed type SiC JFET；
VEE1、VEE2-first, second low pressure source, VCC1、VCC2-first, second high-voltage power supply.
Detailed description of the invention
The present invention provides normal open type/nomal closed type SiC JFET combined brachium pontis power circuit and control method thereof, and for making the purpose of the present invention, technical scheme and effect are clearer, clearly, and referring to the drawings and give an actual example that the present invention is described in more detail.Should be appreciated that described herein being embodied as, only in order to explain the present invention, is not intended to limit the present invention.
Embodiment
Normal open type involved in the present invention/nomal closed type SiC JFET combined brachium pontis power circuit, as in figure 2 it is shown, include normal open type SiC JFET, nomal closed type SiC JFET, totem pole configuration drive circuit and driven with current sources circuit；Described totem pole configuration drive circuit and by switching tube and drive resistance be formed by connecting；Described driven with current sources electric routing switch pipe, driving resistance, diode and inductance connection form.
It is provided with totem pole configuration drive circuit between normal open type SiC JFET grid and power supply；It is provided with driven with current sources circuit between nomal closed type SiC JFET grid and power supply.
Specifically, described totem pole configuration drive circuit includes the first switching tube S1, second switch pipe S2, first drive resistanceR g1；First high-voltage power supply VCC1The most forward connect the first switching tube S1, second switch pipe S2, the first low pressure source VEE1；First switching tube S1, second switch pipe S2Intermediate point connect first driving the resistance i.e. driving resistance of normal open type SiC JFETR g1One end, the driving resistance of normal open type SiC JFETR g1The other end connect normal open type SiC JFET grid.
Described driven with current sources circuit includes the 3rd switching tube S3, the 4th switching tube S4, the 5th switching tube S5, the 6th switching tube S6, second drive resistance i.e. pull-up resistorR g2, the 3rd drive the resistance i.e. driving resistance of nomal closed type SiC JFETR g3 、The afterflow inductance L of anti-backflow diode D and nomal closed type SiC JFET；
Second high-voltage power supply VCC2The most forward connect pull-up resistorR g2, the 3rd switching tube S3, the 4th switching tube S4, the second low pressure source VEE2；3rd switching tube S3, the 4th switching tube S4Intermediate point connect nomal closed type SiC JFET driving resistanceR g3One end, the driving resistance of nomal closed type SiC JFETR g3The other end connect nomal closed type SiC JFET grid；
Second high-voltage power supply VCC2The most forward connect the 5th switching tube S5, the 6th switching tube S6, the second low pressure source VEE2；5th switching tube S5, the 6th switching tube S6Intermediate point connect the positive pole of the anti-diode D that backflows, the negative pole of diode D connects the grid that the other end of the afterflow inductance L of the afterflow inductance L, nomal closed type SiC JFET of nomal closed type SiC JFET connects nomal closed type SiC JFET.
The operation principle of the present embodiment is:
In the normal open type SiC JFET totem pole configuration drive circuit shown in Fig. 3, as the first switching tube S1During conducting, driving voltage is the first high-voltage power supply VCC1, it is possible to reduce conduction loss；As second switch pipe S2During conducting, the first low pressure source VEE1And the first relatively low driving resistanceR g1Normal open type SiC JFET is enable to obtain switching speed faster.As the four, the 5th switching tube S4、S5During conducting, driving voltage is negative voltage the second low pressure source VEE2, nomal closed type SiC JFET turns off, and the afterflow inductance L of nomal closed type SiC JFET realizes the energy storage before opening；As the three, the 5th switching tube S3、S5During conducting, driving voltage is the second high-voltage power supply VCC2, inductance provides peak drive current to nomal closed type SiC JFET grid；After inductance L has discharged, the second high-voltage power supply VCC2Resistance is driven by second, thirdR g2WithR g3Steady-state current is provided.
Above example is a concrete implementing circuit schematic diagram of the present invention, does not limit protection scope of the present invention with this.Any equivalent transformation circuit done based on the present invention, belongs to scope.
Claims (5)
1. normal open type/nomal closed type SiC JFET combined brachium pontis power circuit, is characterized in that, including normal open type SiC JFET, nomal closed type SiC JFET, totem pole configuration drive circuit and driven with current sources circuit；Described totem pole configuration drive circuit and by switching tube and drive resistance be formed by connecting；Described driven with current sources electric routing switch pipe, driving resistance, diode and inductance connection form.
Normal open type the most according to claim 1/nomal closed type SiC JFET combined brachium pontis power circuit, is characterized in that, is provided with totem pole configuration drive circuit between normal open type SiC JFET grid and power supply；It is provided with driven with current sources circuit between nomal closed type SiC JFET grid and power supply.
Normal open type the most according to claim 2/nomal closed type SiC JFET combined brachium pontis power circuit, is characterized in that, described totem pole configuration drive circuit includes the first switching tube S1, second switch pipe S2, first drive resistanceR g1；First high-voltage power supply VCC1The most forward connect the first switching tube S1, second switch pipe S2, the first low pressure source VEE1；First switching tube S1, second switch pipe S2Intermediate point connect first driving resistanceR g1One end, first drive resistanceR g1The other end connect normal open type SiC JFET grid.
Normal open type the most according to claim 2/nomal closed type SiC JFET combined brachium pontis power circuit, is characterized in that, described driven with current sources circuit includes the 3rd switching tube S3, the 4th switching tube S4, the 5th switching tube S5, the 6th switching tube S6, second drive resistanceR g2, the 3rd drive resistanceR g3 、Diode D and inductance L；
Second high-voltage power supply VCC2The most forward connect the second driving resistanceR g2, the 3rd switching tube S3, the 4th switching tube S4, the second low pressure source VEE2；3rd switching tube S3, the 4th switching tube S4Intermediate point connect the 3rd driving resistanceR g3One end, the 3rd drive resistanceR g3The other end connect nomal closed type SiC JFET grid；
Second high-voltage power supply VCC2The most forward connect the 5th switching tube S5, the 6th switching tube S6, the second low pressure source VEE2；5th switching tube S5, the 6th switching tube S6Intermediate point connect the positive pole of diode D, the negative pole of diode D connects the grid that the other end of inductance L, inductance L connects nomal closed type SiC JFET.
The control method of normal open type the most according to claim 1/nomal closed type SiC JFET combined brachium pontis power circuit, is characterized in that, turn on the first switching tube S1, the first high-voltage power supply VCC1Reduce conduction loss；Conducting second switch pipe S2, the first low pressure source VEE1And the first relatively low driving resistanceR g1Normal open type SiC JFET is made to obtain switching speed faster；
Turn on the 4th switching tube S4, the 5th switching tube S5Conducting, driving voltage is the second low pressure source VEE2, nomal closed type SiC JFET turns off, inductance L energy storage before opening；Turn on the 3rd switching tube S3, the 5th switching tube S5, driving voltage is the second high-voltage power supply VCC2, inductance L provides peak drive current to nomal closed type SiC JFET grid；After inductance L has discharged, the second high-voltage power supply VCC2Resistance is driven by secondR g2Resistance is driven with the 3rdR g3Steady-state current is provided.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610342325.7A CN105958803A (en) | 2016-05-23 | 2016-05-23 | Normally ON type and normally OFF type SiC JFET combined bridge arm power circuit and control method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610342325.7A CN105958803A (en) | 2016-05-23 | 2016-05-23 | Normally ON type and normally OFF type SiC JFET combined bridge arm power circuit and control method thereof |
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| Publication Number | Publication Date |
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| CN105958803A true CN105958803A (en) | 2016-09-21 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610342325.7A Pending CN105958803A (en) | 2016-05-23 | 2016-05-23 | Normally ON type and normally OFF type SiC JFET combined bridge arm power circuit and control method thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106712474A (en) * | 2016-12-16 | 2017-05-24 | 南京航空航天大学 | Anti-reflux dual-power-supply driving circuit applicable to SiC BJT (Bipolar Junction Transistor) and control method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050225373A1 (en) * | 2003-06-30 | 2005-10-13 | Koichi Morita | Semiconductor switch |
| CN102810973A (en) * | 2011-05-31 | 2012-12-05 | 三垦电气株式会社 | Gate driver |
| CN105009430A (en) * | 2012-11-27 | 2015-10-28 | 雷比诺动力系统公司 | Dc-dc high voltage converter |
-
2016
- 2016-05-23 CN CN201610342325.7A patent/CN105958803A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050225373A1 (en) * | 2003-06-30 | 2005-10-13 | Koichi Morita | Semiconductor switch |
| CN102810973A (en) * | 2011-05-31 | 2012-12-05 | 三垦电气株式会社 | Gate driver |
| CN105009430A (en) * | 2012-11-27 | 2015-10-28 | 雷比诺动力系统公司 | Dc-dc high voltage converter |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106712474A (en) * | 2016-12-16 | 2017-05-24 | 南京航空航天大学 | Anti-reflux dual-power-supply driving circuit applicable to SiC BJT (Bipolar Junction Transistor) and control method thereof |
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Application publication date: 20160921 |