CN105958632A - Power supply switching circuit and signal transmission method - Google Patents

Power supply switching circuit and signal transmission method Download PDF

Info

Publication number
CN105958632A
CN105958632A CN201610423151.7A CN201610423151A CN105958632A CN 105958632 A CN105958632 A CN 105958632A CN 201610423151 A CN201610423151 A CN 201610423151A CN 105958632 A CN105958632 A CN 105958632A
Authority
CN
China
Prior art keywords
pmos
comparator
power supply
nmos tube
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201610423151.7A
Other languages
Chinese (zh)
Other versions
CN105958632B (en
Inventor
贾金辉
周毅
孙进军
陈冬冬
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
XI'AN AEROSEMI TECHNOLOGY Co.,Ltd.
Original Assignee
Suzhou Weikongzhixin Semiconductor Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Suzhou Weikongzhixin Semiconductor Technology Co Ltd filed Critical Suzhou Weikongzhixin Semiconductor Technology Co Ltd
Priority to CN201610423151.7A priority Critical patent/CN105958632B/en
Publication of CN105958632A publication Critical patent/CN105958632A/en
Application granted granted Critical
Publication of CN105958632B publication Critical patent/CN105958632B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02JCIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
    • H02J9/00Circuit arrangements for emergency or stand-by power supply, e.g. for emergency lighting
    • H02J9/04Circuit arrangements for emergency or stand-by power supply, e.g. for emergency lighting in which the distribution system is disconnected from the normal source and connected to a standby source
    • H02J9/06Circuit arrangements for emergency or stand-by power supply, e.g. for emergency lighting in which the distribution system is disconnected from the normal source and connected to a standby source with automatic change-over, e.g. UPS systems
    • H02J9/061Circuit arrangements for emergency or stand-by power supply, e.g. for emergency lighting in which the distribution system is disconnected from the normal source and connected to a standby source with automatic change-over, e.g. UPS systems for DC powered loads
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/30Modifications for providing a predetermined threshold before switching
    • H03K17/302Modifications for providing a predetermined threshold before switching in field-effect transistor switches

Landscapes

  • Business, Economics & Management (AREA)
  • Emergency Management (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electronic Switches (AREA)

Abstract

The invention discloses a power supply switching circuit. The power supply switching circuit comprises a comparator, a first phase inverter, a second phase inverter, a first buffer, a second buffer, a first PMOS switch tube, a second PMOS switch tube, a third PMOS switch tube and a fourth PMOS switch tube, wherein the comparator comprises a resistor series-connection sampling circuit of an off-chip input power supply, a bias current generation circuit, a comparator body, and a resistor series-connection sampling circuit of a backup power supply. The invention also discloses a signal transmission method for the power supply switching circuit. By adoption of the power supply switching circuit and the signal transmission method, the following technical effects are achieved: 1, an accurate switching threshold value is realized; the switching logic is obtained by determining the high-low level of the off-chip input power supply and the backup power supply; and 2, reliability of the power supply switching is achieved as well; and due to the positive and negative feedback circuits provided by the invention, the shaking and instability of the overall power supply switching circuit caused by shaking of the comparator output due to the fact that the power supply voltage is close to the threshold value point can be avoided.

Description

A kind of power supply switch circuit and signal transfer method
Technical field
The present invention relates to power supply switch circuit, particularly relate to the power supply switch circuit of SOC and the MCU class circuit of battery standby And signal transfer method.
Background technology
In the chip much needing standby mode designs, battery life is the index have to carefully studied and consider, Such as a lot of SOC and MCU chip there is RTC (real time clock) standby clocking capability.In order to improve battery life, In addition to the power consumption of its load circuit itself needs to reduce, power supply switching timely and effectively is also necessary.Such as in start In the case of, in the case of i.e. chip has external power source input, the RTC block power supply in chip is switched to off-chip input power;? In the case of off-chip input power removes, the power supply of RTC block is switched to battery supply more automatically timely.
Existing power supply switch circuit or the most coarse, it is impossible to set the threshold value of power supply switching, or switching threshold is solid Fixed, cause power supply switch circuit to shake, even cause the entanglement of idle function module logic.
The parallel diode power supply switch circuit used such as the most a lot of companies sees accompanying drawing 1, at off-chip input power When VDDIN is more than reserve battery BATT voltage.Power selection circuit select off-chip input power VDDIN as RTC or other The power supply of standby module, when VDDIN removes or VDDIN is less than BATT voltage, power selection circuit selects BATT power supply to make For RTC or the power supply of other standby module.The defect that this framework is the most fatal is that being not applied for VDDIN is inherently less than The application scenario of BATT, the normal 3.0V of such as BATT voltage, and chip requires that VDDIN remains a need for when 2.5V normally working.And This diode power source selects framework that the power supply of the standby module such as RTC can be chosen as BATT in this applications automatically, thus contracts Short battery life.Additionally the pressure drop of diode self also can increase power consumption or reduce cell voltage usable range.
For diode power source switching architecture, when off-chip input power VDDIN is less than reserve battery BATT, framework can be certainly The dynamic BATT of selection inputs as power supply, and this is the most fatal for the application scenario of low-voltage.For example, current button cell electricity Pressure generally 3.0V, and the low voltage operating scope of present a lot of SOC and MCU circuit requirements explores downward to about 2.0V.At this Planting in application scenario, diode power source selection circuit significant discomfort is used.Additionally also can greatly reduce can in the pressure drop of diode self Use battery voltage range.
Another power supply switch circuit sees accompanying drawing 2 for switch Switching power selection circuit, two poles that this circuit solves Tube voltage drop problem, but the most it is not fully solved power supply switching threshold problem.Such as at the off-chip input power of normal 3.3V In VDDIN power domain, even if when VDDIN is reduced to 1.5V, the power supply switching judging circuit of gate composition may still can Think that VDDIN is effective.
In switch Switching power selection circuit, the threshold value of power supply switching is unreasonable, and this power supply switch circuit is defeated in off-chip Enter power vd DIN relatively low time, such as when VDDIN is 1.5V, VDDIN still can be selected to input as power supply, this can patrol load Collect and impact, even result in reversion and the clearing of load logic value.It addition, this circuit is slow at off-chip input power VDDIN During decline, owing to recalcitrating effect of noise, can cause the shake of power supply switch circuit, load circuit can be caused badly by this Impact.
Existing technology all can not solve the threshold value fixation problem of power supply switching.
Summary of the invention
For solving the problem that above-mentioned prior art exists, the present invention proposes a kind of power supply switching electricity using comparator Road, the technical scheme that the present invention provides is as follows: a kind of power supply switch circuit using comparator, including comparator, first anti-phase Device, the second phase inverter, the first buffer, the second buffer, the first PMOS switch pipe, the second PMOS switch pipe, the 3rd PMOS leave Guan Guan, the 4th PMOS switch pipe;The outer input power of the positive end piece of comparator, negative terminal connects backup battery, and outfan is connected to the One phase inverter, the second phase inverter, the first buffer and the input of the second buffer;The power supply of the first described phase inverter is even The outer input power of contact pin, the power supply of the second described phase inverter connects the output of power supply switch circuit, the first described buffer Power supply connect the output of power supply switch circuit, the power supply of the second described buffer connects backup battery;First PMOS switch The source of pipe and substrate connect off-chip input power, and drain terminal connects the source of the second PMOS switch pipe, and it is anti-phase that grid end connects first The output of device;The source of the second PMOS switch pipe connects the drain terminal of the first PMOS switch pipe, drain terminal and substrate and connects power supply switching The output of circuit, grid end connects the output of the second phase inverter;The source of the 3rd PMOS switch pipe and substrate connect power supply switching electricity The output on road, drain terminal connects the source of the 4th PMOS switch pipe, and grid end connects the output of the first buffer;4th PMOS switch pipe Source connect the drain terminal of the 3rd PMOS switch pipe, drain terminal and substrate connect backup battery, and grid end connects the second buffer output End;Described comparator includes the resistant series sample circuit of off-chip input power, bias current generating circuit, comparator master Body, the resistant series sample circuit of backup battery.
Need to meet it when the first phase inverter, the second phase inverter, the first buffer, the second buffer design and can drive rear class The first PMOS switch pipe, the second PMOS switch pipe, the 3rd PMOS switch pipe and the 4th PMOS switch pipe, wherein first is anti-phase Device, the second phase inverter, the first buffer, the second buffer are when designing internal components size, in addition it is also necessary to ensure electric leakage parameter symbol Close the design objective of overall chip.
Technical scheme solves power supply switching threshold in MCU and the SOC class circuit using battery standby and fixes Problem, in particular in the case of operating on low voltage.
Its further technical scheme is:
Comparator sampling input power and backup battery voltage judge whether power supply switches.
Its further technical scheme is:
Comparator also includes positive-feedback circuit, and positive-feedback circuit has lag function.
Its further technical scheme is:
The resistant series sample circuit of off-chip input power includes the first divider resistance, the second divider resistance and the 3rd NMOS Switching tube, first divider resistance one end is connected with off-chip input power, and other end is connected with the second divider resistance;Second The other end of divider resistance is connected with the drain electrode of the 3rd NMOS tube;The outer input power of the gate bonding pads of the 3rd NMOS tube, Source electrode connects ground wire;The resistant series sampling circuit samples ratio of off-chip input power depends on the first dividing potential drop electricity in comparator Resistance and the second divider resistance.
Its further technical scheme is:
Bias current generating circuit is for providing DC point to comparator main body, and bias current generating circuit includes the Three divider resistances and biased electrical flow tube, one end of the 3rd divider resistance connects off-chip input power, the 3rd divider resistance other end Drain electrode and grid with biased electrical flow tube are all connected, the source ground line of biased electrical flow tube.
Its further technical scheme is:
Comparator main body includes the first PMOS, the second PMOS, the first NMOS tube, the second NMOS tube, electric current telescope;The The grid of the grid of one PMOS and the second PMOS connects, the source electrode of the first PMOS and the source electrode phase of the second PMOS and all It is connected to off-chip input power VDDIN, drain electrode and the first PMOS, the grid of the second PMOS and the drain electrode of the first NMOS tube All being connected, the drain electrode of the second PMOS is connected with the drain electrode of the second NMOS tube, the first NMOS tube and the source of the second NMOS tube The drain electrode of pole and electric current telescope is all connected, and the grid of the second NMOS tube and backup battery sample circuit connect;Electric current telescope Grid and bias current generating circuit connect, the source ground line of electric current telescope.
Its further technical scheme is:
The resistant series sample circuit of backup battery includes the 4th divider resistance, the 5th divider resistance and the 4th NMOS tube, 4th divider resistance one end is connected with backup battery, and one end of the other end and the 5th divider resistance is connected;5th dividing potential drop electricity The other end of resistance connects the drain electrode of the 4th NMOS tube;The outer input power of the gate bonding pads of the 4th NMOS tube, source electrode connects ground wire; The resistant series sampling circuit samples ratio of backup battery depends on the first divider resistance in comparator and the second divider resistance; The resistant series sample circuit of backup battery is controlled by off-chip input power by the 4th NMOS tube, effective at off-chip input power In the case of open the sampling channel to backup battery, in the case of invalid, close the sampling channel to backup battery.
Positive-feedback circuit is Schmidt trigger, Schmidt trigger include the 3rd PMOS, the 4th PMOS, the 5th PMOS, the 6th PMOS, the 5th NMOS tube, the 6th NMOS tube, the 7th NMOS tube and the 8th NMOS tube;3rd PMOS and The outer input power of the source bond pads of six PMOS, the drain electrode of the 3rd PMOS and the source electrode of the 4th PMOS connect, and even Receiving off-chip input power VDDIN, drain electrode is all connected with the source electrode of the 4th PMOS and the source electrode of the 5th PMOS;4th The drain electrode of PMOS and the drain electrode of the 6th NMOS tube and the 5th PMOS, the 6th PMOS, the 7th NMOS tube the 8th NMOS tube Grid be all connected;The source electrode of the 6th NMOS tube and the source electrode of the drain electrode of the 5th NMOS tube and the 7th NMOS tube are the most connected Connect;The source ground of the 5th NMOS tube, the grounded drain of the 5th PMOS, the outer input power of the drain electrode contact pin of the 7th NMOS tube VDDIN, the 3rd PMOS, the 4th PMOS, the 6th NMOS tube are all connected with the grid of the 5th NMOS tube, and are connected to ratio The relatively outfan of device main body, the outfan of comparator main body is the connection of the drain electrode of the second NMOS tube drain electrode and the second PMOS Point;6th PMOS is connected with the drain electrode of the 8th NMOS tube, and junction point is the outfan of comparator top layer.
Its further technical scheme is:
Positive-feedback circuit includes the 6th divider resistance, switch, the first rate of exchange device and the second rate of exchange device, the 6th divider resistance one End and reserve battery sample circuit connect, and the other end and switch connect;The other end of switch and the outfan of comparator top layer are even Connect;The input of the first rate of exchange device connects the outfan of comparator main body, and the outfan of the first rate of exchange device connects the second rate of exchange device Input, the outfan that outfan is comparator top layer of the second rate of exchange device;First rate of exchange device and the second rate of exchange device act primarily as Effect to waveform shaping.
The invention also discloses a kind of signal transfer method, have employed power supply switch circuit as above, its signal passes Pass method as follows;
(1) exist when off-chip input power and backup battery, the electricity of the sample circuit input of off-chip input power simultaneously When pressure is higher than the sample circuit input voltage of backup battery, the voltage of comparator main body outfan raises, through positive-feedback circuit The value of output VDDIN_VALID is 1, and the threshold value that now off-chip input supply voltage sets already above comparator, comparator is defeated Go out 1, open the first PMOS switch pipe and the second PMOS switch pipe by the first phase inverter and the second phase inverter, simultaneously by first Buffer and the second buffer close the 3rd PMOS switch pipe and the 4th PMOS switch pipe, thus realize selecting off-chip input power Function as follow-up load power source;
(2) exist when off-chip input power and backup battery, the electricity of the sample circuit input of off-chip input power simultaneously Forcing down when the sample circuit input voltage of backup battery, the voltage of comparator main body outfan reduces, through positive-feedback circuit The value of output VDDIN_VALID is 0, and during the threshold value that now off-chip input supply voltage sets less than comparator, comparator exports 0, close the first PMOS switch pipe and the second PMOS switch pipe by the first phase inverter and the second phase inverter, delay by first simultaneously Rush device and the second buffer opens the 3rd PMOS switch pipe and the 4th PMOS switch pipe, thus realize selecting backup battery as rear The function of continuous load power source;
(3) when only exist off-chip input power and backup battery non-existent in the case of, due to comparator negative terminal sampled value Being now 0, therefore comparator output 1, opens the first PMOS switch pipe and second by the first phase inverter and the second phase inverter PMOS switch pipe, closes the 3rd PMOS switch pipe by the first buffer simultaneously, thus reaches to select the merit of off-chip input power Energy;
(4) in the presence of only backup battery, the power supply used due to comparator is off-chip input power, and this Time do not exist, therefore comparator output 0, is separately turned on the 3rd PMOS switch pipe and the by the first buffer and the second buffer Four PMOS switch pipes, close the second PMOS switch pipe by the second phase inverter simultaneously, thus reach to select the merit of backup battery Energy.
The top layer of whole comparator uses off-chip input power VDDIN as power supply, the output " VDDIN_ of comparator VALID " logical value whether indicate off-chip input power VDDIN effective, when exporting " VDDIN_VALID " and being 1, sheet is described Outer input power is effective, and power supply switch circuit can select off-chip input power as follow-up negative according to the output logical value of comparator The power supply input carried;Otherwise off-chip input power is invalid, and power supply switch circuit can select backup according to the output logic of comparator Power supply BATT inputs as the power supply of follow-up load.
The positive-feedback circuit of comparator has lag function simultaneously, quickly responds, it is to avoid off-chip input supply voltage exists The shake of the power supply switch circuit that the Near Threshold that comparator sets causes or the probability of concussion, it is ensured that power supply switching electricity Stablizing and reliable of road.
According to the requirement of different chip systems, can arbitrarily regulate the first divider resistance and the second divider resistance, Yi Ji Four divider resistances and the 5th divider resistance, thus obtain the threshold value that comparator sets.
Further, since the unlatching of the 4th divider resistance of backup battery BATT and the 5th divider resistance is by off-chip input electricity The control of source VDDIN, in the case of VDDIN is non-existent, the sampling resistor of backup battery BATT does not work, thus further Reduce the electric energy loss of backup battery BATT.
In MCU and SOC class circuit, its power supply switch circuit uses the present invention, has following technical effect that
1. super low-power consumption.Owing to the logic judging circuit in the present invention i.e. comparator uses off-chip input power, because of This will not the energy of additional waste backup battery.In appropriate design comparator, the 4th divider resistance and the 5th divider resistance is exhausted In the case of value, we can be by the lower power consumption of backup battery to na (nA) rank.It addition, the 4th divider resistance and The sampling path of five divider resistances is also controlled by off-chip input power VDDIN, non-existent at off-chip input power VDDIN In the case of, this sampling channel can't be opened, and therefore can't cause the loss of backup battery energy.
2. switching threshold is accurate.Owing to the switch logic of the present invention is to need by judging off-chip input power and backup electricity The height in source obtains.The first divider resistance and the ratio of the second divider resistance and the 4th dividing potential drop in appropriate design comparator After the ratio of resistance and the 5th divider resistance, the threshold voltage of power supply switching is fixing.Therefore the present invention can accomplish electricity The accuracy of the threshold value of source switching.
3. the reliability of power supply switching.The present invention is on the basis of appropriate design switching threshold, at the outfan of comparator Add Schmidt trigger, by the device size of appropriate design Schmidt trigger, it is possible to the design that meets obtaining needing refers to Target hysteresis voltage.Thus avoid supply voltage near threshold point time cause comparator output shake cause whole The shake of power supply switch circuit and instability.
4. applicable craft scope is wide.Owing to the present invention uses the MOS technological design of current main flow, therefore the present invention fits For all MOS technique.
5. for the not requirement of power supply electrifying, power-off sequential.The present invention uses threshold voltage determination methods, in off-chip Input power VDDIN and backup battery BATT can make corresponding switching judging when reaching threshold point.Therefore for off-chip Input power and backup battery BATT power on and the not requirement of power down time length.This is very big adds the present invention's Suitable environment, because different products has different power supply electrifying, power down duration, identical chip is in different application scenarios In also there will be different power on, power down duration, and the present invention can ignore these power on, the temporal difference of power down aspect.
Accompanying drawing explanation
Fig. 1 is the connection figure of parallel diode power supply switch circuit in prior art;
Fig. 2 is the connection figure of prior art breaker in middle Switching power selection circuit;
Fig. 3 is the power supply switch circuit connection figure using comparator;
Fig. 4 is the comparator circuit connection figure using Schmidt trigger to make positive-feedback circuit;
Fig. 5 is the comparator circuit connection figure using the positive-feedback circuit including resistance and switch.
Detailed description of the invention
Below in conjunction with the accompanying drawings the detailed description of the invention of the present invention is described further.
Embodiment one
As shown in Figure 3, power supply switch circuit connection description:
A kind of power supply switch circuit using comparator, including comparator CMP, the first phase inverter INV1, the second phase inverter INV2, the first buffer BUFF1, the second buffer BUFF2, the first PMOS switch pipe PFET1, the second PMOS switch pipe PFET2, 3rd PMOS switch pipe PFET3, the 4th PMOS switch pipe PFET4;The outer input power VDDIN of the positive end piece of comparator CMP, negative Termination backup battery BATT, outfan be connected to the first phase inverter INV1, the second phase inverter INV2, the first buffer BUFF1 with And second input of buffer BUFF2;The outer input power VDDIN of the power source connecting of the first phase inverter INV1, second is anti-phase The power supply of device INV2 connects the power supply of the output VDDOUT, the first buffer BUFF1 of power supply switch circuit and connects power supply switching electricity The power supply of the output VDDOUT on road, the second buffer BUFF2 connects backup battery BATT;The source of the first PMOS switch pipe PFET1 End and substrate connect off-chip input power VDDIN, and drain terminal connects the source of the second PMOS switch pipe PFET2, and grid end connects first The output of phase inverter INV1;The source of the second PMOS switch pipe PFET2 connects the drain terminal of the first PMOS switch pipe PFET1, drain terminal With the output VDDOUT that substrate connects power supply switch circuit, grid end connects the output of the second phase inverter INV2;3rd PMOS switch The source of pipe PFET3 and substrate connect the output VDDOUT of power supply switch circuit, and drain terminal connects the 4th PMOS switch pipe PFET4's Source, grid end connects the output of the first buffer BUFF1;The source of the 4th PMOS switch pipe PFET4 connects the 3rd PMOS switch The drain terminal of pipe PFET3, drain terminal and substrate connect backup battery BATT, and grid end connects the outfan of the second buffer BUFF2.
As shown in Figure 4, comparator circuit connection description:
Comparator sampling input power and backup battery voltage judge whether power supply switches, and comparator includes that off-chip inputs The resistant series sample circuit of power vd DIN, bias current generating circuit, comparator main body, the resistance string of backup battery BATT Connection sample circuit and Schmidt trigger.
The resistant series sample circuit of off-chip input power VDDIN includes the first divider resistance R1, the second divider resistance R2 With the 3rd nmos switch pipe N3, first divider resistance R1 one end is connected with off-chip input power VDDIN, other end and second point Piezoresistance R2 is connected;The other end of the second divider resistance R2 is connected with the drain electrode of the 3rd nmos switch pipe N3;3rd NMOS opens Closing the outer input power VDDIN of gate bonding pads of pipe N3, source electrode connects ground wire GND.
Bias current generating circuit is for providing DC point to comparator main body, and bias current generating circuit includes the Three divider resistance R3 and biased electrical flow tube N11 composition, the outer input power VDDIN of an end piece of the 3rd divider resistance R3, the 3rd The drain and gate of divider resistance R3 another termination bias current pipe N11, the source ground of biased electrical flow tube N11.
Comparator main body includes that the grid of the first PMOS P1 and the grid of the second PMOS P2 connect, the first PMOS P1 Source electrode and the second PMOS P2 source electrode be connected to off-chip input power VDDIN, the drain electrode of the first PMOS P1 and a PMOS Pipe P1, the grid of the second PMOS P2 are connected, and are simultaneously connected to the drain electrode of the first NMOS tube N1, the drain electrode of the second PMOS P2 and The drain electrode of the second NMOS tube N2 is connected, and the source electrode of the first NMOS tube N1 and the second NMOS tube N2 is connected to the leakage of electric current telescope N0 Pole, the grid of electric current telescope N0 and the grid of biased electrical flow tube N11 connect, the source ground of electric current telescope N0, the second NMOS tube The grid of N2 and the 3rd divider resistance R3 and the 4th divider resistance R3 junction point are connected.
Backup battery resistant series sample circuit includes the 4th divider resistance R4, the 5th divider resistance R5 and the 4th NMOS tube N4, the 5th divider resistance R4 one end is connected with backup battery BATT, and one end of the other end and the 5th divider resistance R5 is connected; The other end of the 5th divider resistance R5 connects the drain electrode of the 4th NMOS tube N4;Input outside the gate bonding pads of the 4th NMOS tube N4 Power vd DIN, source electrode connects ground wire GND;Backup battery sample circuit passes through the 4th NMOS tube N4 by off-chip input power VDDIN Control, in the case of off-chip input power VDDIN is effective, opens the sampling channel to backup battery, in the feelings that VDDIN is invalid The sampling channel to backup battery is closed under condition.
Schmidt trigger include the 3rd PMOS P3, the 4th PMOS P4, the 5th PMOS P5, the 6th PMOS P6, 5th NMOS tube N5, the 6th NMOS tube N6, the 7th NMOS tube N7 and the 8th NMOS tube N8;3rd PMOS P3 and the 6th PMOS The source electrode of P6 is connected, and is connected to off-chip input power, drain electrode and the source electrode of the 4th PMOS P4 and the 5th PMOS P5 Source electrode be all connected;The drain electrode of the 4th PMOS P4 and the drain electrode of the 6th NMOS tube N6 and the 5th PMOS P5, the 6th PMOS P6, the 7th NMOS tube N7, the grid of the 8th NMOS tube N8 are all connected;The source electrode of the 6th NMOS tube N6 and the 5th NMOS The drain electrode of pipe N5 and the source electrode of the 7th NMOS tube N7 are all connected;The source electrode connection ground wire GND of the 5th NMOS tube N5, the 5th The drain electrode of PMOS P5 connects ground wire GND, and the drain electrode of the 7th NMOS tube N7 connects off-chip input power VDDIN, the 3rd PMOS The grid of P3, the 4th PMOS P4, the 6th NMOS tube N6 and the 5th NMOS tube N5 is all connected, and is connected to comparator master The outfan of body, the outfan of comparator main body is the junction point of the drain electrode of the second NMOS tube N2 drain electrode and the second PMOS P2; The drain electrode of the 6th PMOS P6 and the 8th NMOS tube N8 is connected, and junction point is the outfan VDDIN_VALID of comparator top layer.
Exist if the power source combination of power supply switch circuit is off-chip input power VDDIN and backup battery BATT simultaneously, The voltage of the resistant series sample circuit input of the off-chip input power VDDIN resistant series sampling electricity higher than backup battery BATT Road input voltage, its circuit signal transmission method is as follows:
The voltage of comparator main body outfan raises, and the value through positive-feedback circuit output VDDIN_VALID is 1, now The threshold value that off-chip input supply voltage sets already above comparator, comparator output 1, by the first phase inverter INV1 and second Phase inverter INV2 opens the first PMOS switch pipe PFET1 and the second PMOS switch pipe PFET2, simultaneously by the first buffer BUFF1 and the second buffer BUFF2 closes the 3rd PMOS switch pipe PFET3 and the 4th PMOS switch pipe PFET4, thus realizes choosing Select the off-chip input power VDDIN function as follow-up load power source.
The top layer of whole comparator uses off-chip input power VDDIN as power supply, the output " VDDIN_ of comparator VALID " logical value whether indicate off-chip input power VDDIN effective, when exporting " VDDIN_VALID " and being 1, sheet is described Outer input power is effective, when exporting " VDDIN_VALID " and being 0, illustrates that off-chip input power is invalid, and power supply switch circuit can root Select backup battery BATT or off-chip input power VDDIN defeated as the power supply of follow-up load according to the output logical value of comparator Enter.
According to the requirement of different chip systems, can arbitrarily regulate the first divider resistance R1 and the ratio of the second divider resistance R2 Example, and the 4th divider resistance R4 and the ratio of the 5th divider resistance R5, thus obtain the power supply switching threshold point needed.Such as We needTime Switching power selection circuit to off-chip input power VDDIN, then can setTo simultaneouslyBring intoJust Can obtainWithRatio there is relation one to one.If we fixThen
After the ratio of divider resistance R1/R2 and R4/R5 determines, if comparator anode input voltage that is first The grid voltage of NMOS tube N1 is higher than the grid voltage of negative terminal input voltage that is second NMOS tube N2, and now the first NMOS tube N1 is leaked Electric current Ids1 is more than the second NMOS tube N2 leakage current Ids2, and the first PMOS P1 and the second PMOS P2 are owing to being electric current mirror holder Structure, therefore leakage current is identical, is all same as the leakage current Ids1 of the first NMOS tube N1, therefore comparator main body outfan that is second The drain voltage of NMOS tube N2 raises, and the value through positive-feedback circuit output VDDIN_VALID is 1, shows now off-chip input The threshold value that supply voltage sets already above comparator, power selection circuit is switched to off-chip input power VDDIN;Otherwise power supply Switching circuit is switched to backup battery BATT.
Further, since the unlatching of the 4th divider resistance R4 and the 5th divider resistance R5 of backup battery BATT is by the 4th NMOS tube N4 is controlled by off-chip input power VDDIN, in the case of VDDIN is non-existent, and the sampling of backup battery BATT Resistance does not work, thus reduces the electric energy loss of backup battery BATT further.
The output of comparator uses Schmidt's logic, thus avoid off-chip input power near threshold point time power supply cut Change the probability of circuit jitter or concussion, it is ensured that stablizing and reliable of power supply switch circuit.
Embodiment two
The circuit connection diagram of power supply switch circuit as shown in Figure 3, is illustrated in embodiment 1.
As it is shown in figure 5, comparator circuit connection description:
Comparator sampling input power and backup battery voltage judge that sheet external power is the most effective, described comparator bag Include the resistant series sample circuit of off-chip input power VDDIN, bias current generating circuit, comparator main body, backup battery The resistant series sample circuit of BATT and Schmidt trigger.
The resistant series sample circuit of off-chip input power VDDIN includes the first divider resistance R1 ', the second divider resistance R2 ' and the 3rd nmos switch pipe N3 ', first divider resistance R1 ' one end is connected with off-chip input power VDDIN, other end and Second divider resistance R2 ' is connected;The other end of the second divider resistance R2 ' is connected with the drain electrode of the 3rd nmos switch pipe N3 ';The The outer input power VDDIN of the gate bonding pads of three nmos switch pipe N3 ', source electrode connects ground wire GND.
Bias current generating circuit is for providing DC point to comparator main body, and bias current generating circuit includes the One end connection off-chip input power VDDIN of three divider resistance R3 ' and biased electrical flow tube N11 ', the 3rd divider resistance R3 ', the 3rd Divider resistance R3 ' the other end is all connected with drain electrode and the grid of biased electrical flow tube N11 ', the source electrode of biased electrical flow tube N11 ' Earth lead GND.
Comparator main body includes the first PMOS P1 ', the second PMOS P2 ', the first NMOS tube N1 ', the second NMOS tube N2 ', electric current telescope N0 ';The grid of the first PMOS P1 ' and the grid of the second PMOS P2 ' connect, the first PMOS P1's ' Source electrode and the source electrode phase of the second PMOS P2 ' and be all connected to off-chip input power VDDIN, drain electrode and the first PMOS P1 ', the The grid of two PMOS P2 ' and the drain electrode of the first NMOS tube N1 ' are all connected, the drain electrode and second of the second PMOS P2 ' The drain electrode of NMOS tube N2 ' is connected, the source electrode of the first NMOS tube N1 ' and the second NMOS tube N2 ' and the drain electrode of electric current telescope N0 ' All being connected, the grid of the second NMOS tube N2 ' and backup battery resistant series sample circuit connect;The grid of electric current telescope N0 ' Connect with bias current generating circuit, the source ground line GND of electric current telescope N0 '.
The resistant series sample circuit of backup battery includes the 4th divider resistance R4 ', the 5th divider resistance R5 ' and the 4th NMOS tube N4 ', the 5th divider resistance R4 ' one end is connected with backup battery BATT, the other end and the one of the 5th divider resistance R5 ' End is connected;The other end of the 5th divider resistance R5 ' connects the drain electrode of the 4th NMOS tube N4 ';The grid of the 4th NMOS tube N4 ' Connecting off-chip input power VDDIN, source electrode connects ground wire GND;Backup battery sample circuit passes through the 4th NMOS tube N4 ' by off-chip Input power VDDIN controls, and opens the sampling channel to backup battery in the case of off-chip input power VDDIN is effective, The sampling channel to backup battery is closed in the case of VDDIN is invalid.
Positive-feedback circuit includes the 6th divider resistance R6, switch K1, the first rate of exchange device INVC1 and the second rate of exchange device INVC2, 6th divider resistance R6 one end and reserve battery sample circuit connect, and the other end and switch K1 connect;Switch K1 the other end and The outfan VDDIN_VALID of comparator top layer connects;Resistance R6 and switch K1 plus the output VDDIN_VALID of comparator is May make up a feedback, when VDDIN_VALID effectively (=1), switch K1 opens, by the negative terminal input i.e. metal-oxide-semiconductor of comparator The grid of N2 drags down further, and this also corresponds to add a hysteresis voltage to comparator.The input of the first rate of exchange device INVC1 Connecting the outfan (drain terminal of the second NMOS tube N2) of comparator main body, the outfan of the first rate of exchange device INVC1 connects the second ratio The input of valency device INVC2, the outfan VDDIN_VALID that outfan is comparator top layer of the second rate of exchange device INVC2;First Rate of exchange device INVC1 and the second rate of exchange device INVC2 primarily serves the effect of waveform shaping.
Exist if the power source combination of power supply switch circuit is off-chip input power VDDIN and backup battery BATT simultaneously, And the sample circuit input voltage that the voltage of the sample circuit input of off-chip input power VDDIN is less than backup battery BATT, its The signal transfer method of power supply switch circuit is as follows:
The voltage of comparator main body outfan reduces, and the value through positive-feedback circuit output VDDIN_VALID is 0, now During the threshold value that off-chip input supply voltage sets less than comparator, comparator output 0, anti-by the first phase inverter INV1 and second Phase device INV2 closes the first PMOS switch pipe PFET1 and the second PMOS switch pipe PFET2, simultaneously by the first buffer BUFF1 Open the 3rd PMOS switch pipe PFET3 and the 4th PMOS switch pipe PFET4 with the second buffer BUFF2, thus realize selecting standby Part power supply BATT is as the function of follow-up load power source.
The top layer of whole comparator uses off-chip input power VDDIN as power supply, the output " VDDIN_ of comparator VALID " logical value whether indicate off-chip input power VDDIN effective, when exporting " VDDIN_VALID " and being 1, sheet is described Outer input power is effective, when exporting " VDDIN_VALID " and being 0, illustrates that off-chip input power is invalid, and power supply switch circuit can root Select backup battery BATT or off-chip input power VDDIN defeated as the power supply of follow-up load according to the output logical value of comparator Enter.
According to the requirement of different chip systems, can arbitrarily regulate the first divider resistance R1's ' and the second divider resistance R2 ' Ratio, and the ratio of the 4th divider resistance R4 ' and the 5th divider resistance R5 ', thus obtain the power supply switching threshold point needed. Such as we needTime Switching power selection circuit to off-chip input power VDDIN, then can setTo simultaneouslyBring into Can be obtained byWithRatio there is relation one to one.If we fixThen
At divider resistanceAndRatio determine after, if comparator anode input voltage that is the oneth NMOS The grid voltage of the pipe N1 ' grid voltage higher than negative terminal input voltage that is second NMOS tube N2 ', now the first NMOS tube N1 ' leakage Electric current Ids1 is more than the second NMOS tube N2 ' leakage current Ids2, and the first PMOS P1 ' and the second PMOS P2 ' is owing to being electric current Mirror holder structure, therefore leakage current is identical, is all same as the leakage current Ids1 of the first NMOS tube N1 ', and therefore comparator main body outfan is i.e. The drain voltage of the second NMOS tube N2 ' raises, and the value through positive-feedback circuit output VDDIN_VALID is 1, shows now off-chip The threshold value that input supply voltage sets already above comparator, power selection circuit is switched to off-chip input power VDDIN;Otherwise Power supply switch circuit is switched to backup battery BATT.
Further, since the unlatching of the 4th divider resistance R4 ' and the 5th divider resistance R5 ' of backup battery BATT is by the 4th NMOS tube N4 ' is controlled by off-chip input power VDDIN, in the case of VDDIN is non-existent, and the sampling of backup battery BATT Resistance does not work, thus reduces the electric energy loss of backup battery BATT further.
If the power source combination of power supply switch circuit is to only exist off-chip input power VDDN and backup battery BATT does not exists In the case of, the power supply used due to comparator is off-chip input power VDDIN, and the communication means of power supply switch circuit is as follows:
Owing to comparator negative terminal sampled value is now 0, therefore comparator output 1, by the first phase inverter INV1 and second Phase inverter INV2 opens the first PMOS switch pipe PFET1 and the second PMOS switch pipe PFET2, simultaneously by the first buffer BUFF1 closes the 3rd PMOS switch pipe PFET3, thus reaches to select the function of off-chip input power VDDIN;
If in the presence of the power source combination of power supply switch circuit is only backup battery BATT, owing to comparator uses Power supply be off-chip input power VDDIN, the signal transfer method of power supply switch circuit is as follows:
Now VDDIN does not exists, therefore comparator output 0, by the first buffer BUFF1 and the second buffer BUFF2 It is separately turned on the 3rd PMOS switch pipe PFET3 and the 4th PMOS switch pipe PFET4, is closed by the second phase inverter INV2 simultaneously Second PMOS switch pipe PFET2, thus reach to select the function of backup battery BATT.
The foregoing is only embodiments of the invention, be not limited to the present invention, for those skilled in the art For Yuan, the electrical combination within comparator is all within the spirit and principles in the present invention, and any amendment, the equivalent made are replaced Change, improvement etc., should be included within the scope of the present invention.

Claims (10)

1. a power supply switch circuit, it is characterised in that: include comparator, the first phase inverter, the second phase inverter, the first buffering Device, the second buffer, the first PMOS switch pipe, the second PMOS switch pipe, the 3rd PMOS switch pipe, the 4th PMOS switch pipe;Institute The anode of the comparator stated connects off-chip input power, and negative terminal connects backup battery, outfan be connected to the first phase inverter, second Phase inverter, the first buffer and the input of the second buffer;Electricity is inputted outside the power source connecting of the first described phase inverter Source, the power supply of the second described phase inverter connects the output of power supply switch circuit, and the power supply of the first described buffer connects electricity The output of source switching circuit, the power supply of the second described buffer connects backup battery;The source of the first described PMOS switch pipe End and substrate connect off-chip input power, and drain terminal connects the source of the second PMOS switch pipe, and grid end connects the defeated of the first phase inverter Go out;The source of the second described PMOS switch pipe connects the drain terminal of the first PMOS switch pipe, drain terminal and substrate and connects power supply switching The output of circuit, grid terminate the outfan of the second phase inverter;Source and the substrate of the 3rd described PMOS switch pipe connect power supply and cut Changing the output of circuit, drain terminal connects the source of the 4th PMOS switch pipe, and grid end connects the outfan of the first buffer;Described The source of four PMOS switch pipes connects the drain terminal of the 3rd PMOS switch pipe, drain terminal and substrate and connects backup battery, and grid end connects second The outfan of buffer;Described comparator includes that the resistant series sample circuit of off-chip input power, bias current produce electricity Road, comparator main body, the resistant series sample circuit of backup battery.
2. a kind of power supply switch circuit as claimed in claim 1, it is characterised in that: input electricity outside described comparator sampling sheet Source and backup battery voltage judge whether switching.
3. a kind of power supply switch circuit as claimed in claim 1, it is characterised in that: described comparator also includes positive and negative feed Road, described positive-feedback circuit has lag function.
4. a kind of power supply switch circuit as claimed in claim 1, it is characterised in that: the resistance string of described off-chip input power Connection sample circuit includes the first divider resistance, the second divider resistance and the 3rd nmos switch pipe;The first described divider resistance one End is connected with off-chip input power, and other end is connected with the second divider resistance;The second described divider resistance is additionally One end is connected with the drain electrode of the 3rd NMOS tube;The outer input power of the gate bonding pads of the 3rd described NMOS tube, source electrode connects Ground wire;The resistance series circuit oversampling ratio of described off-chip input power depends on the first divider resistance in comparator and Two divider resistances.
5. a kind of power supply switch circuit as claimed in claim 1, it is characterised in that: the resistant series of described backup battery is adopted Sample circuit includes the 4th divider resistance, the 5th divider resistance and the 4th NMOS tube, the 4th divider resistance one end and backup battery phase Connecting, one end of the other end and the 5th divider resistance is connected;The other end of the 5th divider resistance connects the leakage of the 4th NMOS tube Pole;The outer input power of the gate bonding pads of the 4th NMOS tube, source electrode connects ground wire;The resistant series sampling of described backup battery Circuit sampling ratio depends on the 4th divider resistance in comparator and the 5th divider resistance;The resistance string of described backup battery Connection sample circuit is controlled by off-chip input power by the 4th NMOS tube, opens standby in the case of off-chip input power is effective The sampling channel of part power supply, closes the sampling channel to backup battery in the case of invalid.
6. a kind of power supply switch circuit as claimed in claim 2, it is characterised in that: described bias current generating circuit is used for Thering is provided DC point to described comparator main body, described bias current generating circuit includes the 3rd divider resistance and biasing Tube of current forms;One end of the 3rd described divider resistance connects off-chip input power;The 3rd described divider resistance other end Drain electrode and grid with biased electrical flow tube are all connected;The source ground line of described biased electrical flow tube.
7. a kind of power supply switch circuit as claimed in claim 2, it is characterised in that: described comparator main body includes first PMOS, the second PMOS, the first NMOS tube, the second NMOS tube, electric current telescope;The grid and second of the first described PMOS The grid of PMOS connects, and the source electrode of source electrode and the second PMOS is connected and is all connected to off-chip input power, drain electrode and the The drain electrode of one PMOS, the grid of the second PMOS and the first NMOS tube is all connected;The drain electrode of the second described PMOS Drain electrode with the second NMOS tube is connected, the first described NMOS tube and the source electrode of the second NMOS tube and the drain electrode of electric current telescope All it is connected;The grid of the second described NMOS tube and backup battery sample circuit connect;The grid of described electric current telescope and Bias current generating circuit connects, source ground line.
8. any one power supply switch circuit as described in claim 3 to 7, it is characterised in that: described positive-feedback circuit is Schmidt trigger, described Schmidt trigger includes the 3rd PMOS, the 4th PMOS, the 5th PMOS, the 6th PMOS Pipe, the 5th NMOS tube, the 6th NMOS tube, the 7th NMOS tube and the 8th NMOS tube;Described the 3rd PMOS source electrode and the 6th The source electrode of PMOS is connected, and is connected to off-chip input power, drain electrode and the source electrode of the 4th PMOS and the 5th PMOS The source electrode of pipe is all connected;The drain electrode of the 4th described PMOS and the drain electrode of the 6th NMOS tube and the 5th PMOS, the 6th PMOS, the 7th NMOS tube, the grid of the 8th NMOS tube are all connected;The source electrode of the 6th described NMOS tube and the 5th NMOS tube Drain electrode and the source electrode of the 7th NMOS tube be all connected;The source electrode of the 5th described NMOS tube connects ground wire, described the 5th The drain electrode of PMOS connects ground wire, and the drain electrode of the 7th described NMOS tube connects off-chip input power;Described the 3rd PMOS, The grid of the 4th PMOS, the 6th NMOS tube and the 5th NMOS tube is all connected, and is connected to the output of comparator main body End, the outfan of comparator main body is the junction point of the drain electrode of the second NMOS tube drain electrode and the second PMOS;Described the 6th PMOS is connected with the drain electrode of the 8th NMOS tube, and junction point is the outfan of comparator top layer.
9. the arbitrary a kind of power supply switch circuit as described in claim 3 to 7, it is characterised in that: described positive-feedback circuit Including the 6th divider resistance, switch, the first rate of exchange device and the second rate of exchange device, the 6th described divider resistance one end and reserve battery Resistant series sample circuit connect, the other end and switch connect;The other end of described switch and the output of comparator top layer End connects;The input of the first rate of exchange device connects the outfan of comparator main body, and the outfan of the first rate of exchange device connects the second ratio The input of valency device, the outfan that outfan is comparator top layer of the second rate of exchange device;First rate of exchange device and the second rate of exchange device rise Effect to waveform shaping.
10. a signal transfer method, is applied to the power supply switch circuit as described in claim 1-7, it is characterised in that: described Signal transfer method as follows;
(1) exist when off-chip input power and backup battery simultaneously, off-chip input power resistant series sample circuit defeated The voltage entered higher than backup battery resistant series sample circuit input voltage time, the voltage liter of comparator main body outfan Height, the value through positive-feedback circuit output VDDIN_VALID is 1, and now off-chip input supply voltage sets already above comparator Fixed threshold value, comparator output 1, open the first PMOS switch pipe by the first phase inverter and the second phase inverter and the 2nd PMOS opens Guan Guan, closes the 3rd PMOS switch pipe and the 4th PMOS switch pipe by the first buffer and the second buffer simultaneously, thus real Now select off-chip input power as the function of follow-up load power source;
(2) exist when off-chip input power and backup battery, the resistant series sample circuit input of off-chip input power simultaneously Voltage less than the resistant series sample circuit input voltage of backup battery time, the voltage of comparator main body outfan reduces, warp The value crossing positive-feedback circuit output VDDIN_VALID is 0, the threshold value that now off-chip input supply voltage sets less than comparator Time, comparator output 0, close the first PMOS switch pipe and the second PMOS switch pipe by the first phase inverter and the second phase inverter, Open the 3rd PMOS switch pipe and the 4th PMOS switch pipe by the first buffer and the second buffer simultaneously, thus realize selecting Backup battery is as the function of follow-up load power source;
(3) when only exist off-chip input power and backup battery non-existent in the case of, due to comparator negative terminal sampled value now Being 0, therefore comparator output 1, opens the first PMOS switch pipe by the first phase inverter and the second phase inverter and the 2nd PMOS opens Guan Guan, closes the 3rd PMOS switch pipe by the first buffer simultaneously, thus reaches to select the function of off-chip input power;
(4) in the presence of only backup battery, the power supply used due to comparator is off-chip input power, and the most not Existing, therefore comparator output 0, is separately turned on the 3rd PMOS switch pipe and the 4th by the first buffer and the second buffer PMOS switch pipe, closes the second PMOS switch pipe by the second phase inverter simultaneously, thus reaches to select the function of backup battery.
CN201610423151.7A 2016-06-16 2016-06-16 A kind of power supply switch circuit and signal transfer method Active CN105958632B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201610423151.7A CN105958632B (en) 2016-06-16 2016-06-16 A kind of power supply switch circuit and signal transfer method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201610423151.7A CN105958632B (en) 2016-06-16 2016-06-16 A kind of power supply switch circuit and signal transfer method

Publications (2)

Publication Number Publication Date
CN105958632A true CN105958632A (en) 2016-09-21
CN105958632B CN105958632B (en) 2019-08-16

Family

ID=56905793

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201610423151.7A Active CN105958632B (en) 2016-06-16 2016-06-16 A kind of power supply switch circuit and signal transfer method

Country Status (1)

Country Link
CN (1) CN105958632B (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105958631A (en) * 2016-06-16 2016-09-21 苏州微控智芯半导体科技有限公司 Power supply switching circuit employing comparator and signal transmission method
CN109245756A (en) * 2018-11-07 2019-01-18 深圳讯达微电子科技有限公司 A kind of method and chip output interface circuit reducing power domain switching noise
CN114301154A (en) * 2020-09-22 2022-04-08 西安诺瓦星云科技股份有限公司 Power supply backup control panel, display controller and LED display control system

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105958631A (en) * 2016-06-16 2016-09-21 苏州微控智芯半导体科技有限公司 Power supply switching circuit employing comparator and signal transmission method
CN205753623U (en) * 2016-06-16 2016-11-30 苏州微控智芯半导体科技有限公司 A kind of power supply switch circuit

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105958631A (en) * 2016-06-16 2016-09-21 苏州微控智芯半导体科技有限公司 Power supply switching circuit employing comparator and signal transmission method
CN205753623U (en) * 2016-06-16 2016-11-30 苏州微控智芯半导体科技有限公司 A kind of power supply switch circuit

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105958631A (en) * 2016-06-16 2016-09-21 苏州微控智芯半导体科技有限公司 Power supply switching circuit employing comparator and signal transmission method
CN105958631B (en) * 2016-06-16 2018-08-03 苏州微控智芯半导体科技有限公司 A kind of power supply switch circuit and signal transfer method using comparator
CN109245756A (en) * 2018-11-07 2019-01-18 深圳讯达微电子科技有限公司 A kind of method and chip output interface circuit reducing power domain switching noise
CN109245756B (en) * 2018-11-07 2023-10-03 深圳讯达微电子科技有限公司 Method for reducing power domain switching noise and chip output interface circuit
CN114301154A (en) * 2020-09-22 2022-04-08 西安诺瓦星云科技股份有限公司 Power supply backup control panel, display controller and LED display control system

Also Published As

Publication number Publication date
CN105958632B (en) 2019-08-16

Similar Documents

Publication Publication Date Title
CN102130492B (en) Device and method for selecting power supply
CN101795129B (en) Power-on reset circuit
US7969191B2 (en) Low-swing CMOS input circuit
CN105958631B (en) A kind of power supply switch circuit and signal transfer method using comparator
CN103166616B (en) Analog switching circuit structure
CN205753623U (en) A kind of power supply switch circuit
CN106921284B (en) A kind of MOSFET floating driving circuit
CN105226919A (en) A kind of soft-sphere model method of power MOSFET and circuit
JP2012095358A (en) Charge recycling in power-gated cmos circuit and in super cutoff cmos circuit
CN102231598B (en) Power supply circuit
US9362916B2 (en) Circuit arrangements and methods of operating the same
US10749511B2 (en) IO circuit and access control signal generation circuit for IO circuit
JPH11214962A (en) Semiconductor integrated circuit device
CN105958632A (en) Power supply switching circuit and signal transmission method
CN209201038U (en) A kind of multiple voltage domain reset delay circuit
CN102064818A (en) Complementary metal oxide semiconductor (CMOS) input/output interface circuit
CN105656176A (en) High-reliability power switching circuit and electronic device
CN202652172U (en) Analog switch circuit structure
CN108233701A (en) A kind of buck voltage conversion circuit
CN105846812B (en) A kind of electric current automatic switch-over circuit and its implementation
CN205753622U (en) A kind of power supply switch circuit using comparator
CN101212219A (en) N-trap potential switching circuit
CN101667740B (en) Output driving circuit in lithium battery charge and discharge protective chip
CN109787612A (en) A kind of novel wide scope sub-threshold level shifter circuit
CN106341118A (en) Level Converter Circuit

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant
TR01 Transfer of patent right

Effective date of registration: 20210413

Address after: 710000 5 / F, Weixing building, No.70 Jinye Road, high tech Zone, Xi'an City, Shaanxi Province

Patentee after: XI'AN AEROSEMI TECHNOLOGY Co.,Ltd.

Address before: Room 501, building 9, Pioneer Park, 100 Jinxi Road, Binhu District, Wuxi City, Jiangsu Province, 214122

Patentee before: SUZHOU WEIKONG ZHIXIN SEMICONDUCTOR TECHNOLOGY Co.,Ltd.

TR01 Transfer of patent right