CN105954981A - 可提高光刻精度的遮罩 - Google Patents

可提高光刻精度的遮罩 Download PDF

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Publication number
CN105954981A
CN105954981A CN201610586299.2A CN201610586299A CN105954981A CN 105954981 A CN105954981 A CN 105954981A CN 201610586299 A CN201610586299 A CN 201610586299A CN 105954981 A CN105954981 A CN 105954981A
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CN
China
Prior art keywords
photoetching
shading
lithography mask
covers
photoresists
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Pending
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CN201610586299.2A
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English (en)
Inventor
吕耀安
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WUXI HI-NANO TECHNOLOGY Co Ltd
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WUXI HI-NANO TECHNOLOGY Co Ltd
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Application filed by WUXI HI-NANO TECHNOLOGY Co Ltd filed Critical WUXI HI-NANO TECHNOLOGY Co Ltd
Priority to CN201610586299.2A priority Critical patent/CN105954981A/zh
Publication of CN105954981A publication Critical patent/CN105954981A/zh
Pending legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70241—Optical aspects of refractive lens systems, i.e. comprising only refractive elements

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

本发明公开了一种可提高光刻精度的遮罩，包括透镜组；深紫外光经由透镜组射出；透镜组的光射出方向固定有光刻遮罩；所述光刻遮罩；所述光刻遮罩下方设置有待处理晶片；待处理晶片之上粘贴有光刻胶；所述光刻胶有多个，相邻的光刻胶之间为第一空档；多块光刻胶组成光刻图案；光刻遮罩也有多个，每个光刻遮罩的位置与光刻胶的位置严格对应；相邻的光刻遮罩之间为第二空档；每两个相邻的光刻遮罩为一组，组成一组的两个光刻遮罩下方安装有一个移向透镜；每个光刻遮罩只有一个边缘被光刻遮罩覆盖。本发明通过增加移向透镜，改变了深紫外光在光刻胶边缘的相位，使得光刻边缘的深紫外光分辨率更高，有利于提高半导体器件的关键宽度。

Description

可提高光刻精度的遮罩
技术领域
本发明涉及集成电路制造领域，具体涉及一种可提高光刻精度的遮罩。
背景技术
光刻是集成电路制造领域常会用到的一种工艺流程，随着集成电路的制造工艺的提升，
发明内容
针对现有技术的不足，本发明公开了一种可提高光刻精度的遮罩。
本发明的技术方案如下：
一种可提高光刻精度的遮罩，包括透镜组；深紫外光经由透镜组射出；透镜组的光射出方向固定有光刻遮罩；所述光刻遮罩；所述光刻遮罩下方设置有待处理晶片；待处理晶片之上粘贴有光刻胶；所述光刻胶有多个，相邻的光刻胶之间为第一空档；多块光刻胶组成光刻图案；光刻遮罩也有多个，每个光刻遮罩的位置与光刻胶的位置严格对应；相邻的光刻遮罩之间为第二空档；每两个相邻的光刻遮罩为一组，组成一组的两个光刻遮罩下方安装有一个移向透镜；每个光刻遮罩只有一个边缘被光刻遮罩覆盖。
本发明的有益技术效果是：
本发明通过增加移向透镜，改变了深紫外光在光刻胶边缘的相位，使得光刻边缘的深紫外光分辨率更高，有利于提高半导体器件的关键宽度。
附图说明
图1是本发明的结构图。
图2是本发明的原理图。
图3是现有技术的深紫外线相位图。
具体实施方式
图1是本发明的结构图。如图1所示，本发明包括透镜组4。深紫外光经由透镜组4射出。透镜组4的光射出方向固定有光刻遮罩。光刻遮罩3。光刻遮罩3下方设置有待处理晶片1。待处理晶片1之上粘贴有光刻胶2。光刻胶2有多个，相邻的光刻胶2之间为第一空档21。多块光刻胶2组成光刻图案。光刻遮罩3也有多个，每个光刻遮罩3的位置与光刻胶2的位置严格对应。相邻的光刻遮罩3之间为第二空档31。每两个相邻的光刻遮罩3为一组，组成一组的两个光刻遮罩下方安装有一个移向透镜32。每个光刻遮罩3只有一个边缘被光刻遮罩3覆盖。
图2是本发明的原理图，如图2所示，由于移向透镜32的存在，此处的深紫外光的相位会被移为相反方向，则相邻的光刻胶对于深紫外光的分辨率提高。此分辨率的提高可以参照图3，图3是现有技术的深紫外线相位图。与现有技术相比，显然，本发明可大大提高光刻精度，有利于减小集成电路的关键尺寸。
以上所述的仅是本发明的优选实施方式，本发明不限于以上实施例。可以理解，本领域技术人员在不脱离本发明的精神和构思的前提下直接导出或联想到的其他改进和变化，均应认为包含在本发明的保护范围之内。

Claims (1)

1.一种可提高光刻精度的遮罩，其特征在于，包括透镜组(4)；深紫外光经由透镜组(4)射出；透镜组(4)的光射出方向固定有光刻遮罩；所述光刻遮罩(3)；所述光刻遮罩(3)下方设置有待处理晶片(1)；待处理晶片(1)之上粘贴有光刻胶(2)；所述光刻胶(2)有多个，相邻的光刻胶(2)之间为第一空档(21)；多块光刻胶(2)组成光刻图案；光刻遮罩(3)也有多个，每个光刻遮罩(3)的位置与光刻胶(2)的位置严格对应；相邻的光刻遮罩(3)之间为第二空档(31)；每两个相邻的光刻遮罩(3)为一组，组成一组的两个光刻遮罩下方安装有一个移向透镜(32)；每个光刻遮罩(3)只有一个边缘被光刻遮罩(3)覆盖。
CN201610586299.2A 2016-07-22 2016-07-22 可提高光刻精度的遮罩 Pending CN105954981A (zh)

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CN201610586299.2A CN105954981A (zh) 2016-07-22 2016-07-22 可提高光刻精度的遮罩

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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103454850A (zh) * 2013-09-24 2013-12-18 北京京东方光电科技有限公司 掩膜板及隔垫物制作方法
US20140370447A1 (en) * 2012-12-11 2014-12-18 GlobalFoundries, Inc. Semiconductor device resolution enhancement by etching multiple sides of a mask

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140370447A1 (en) * 2012-12-11 2014-12-18 GlobalFoundries, Inc. Semiconductor device resolution enhancement by etching multiple sides of a mask
CN103454850A (zh) * 2013-09-24 2013-12-18 北京京东方光电科技有限公司 掩膜板及隔垫物制作方法

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