CN105954619A - Field sensitive electromagnetic pulse protective material performance test device - Google Patents
Field sensitive electromagnetic pulse protective material performance test device Download PDFInfo
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- CN105954619A CN105954619A CN201610332463.7A CN201610332463A CN105954619A CN 105954619 A CN105954619 A CN 105954619A CN 201610332463 A CN201610332463 A CN 201610332463A CN 105954619 A CN105954619 A CN 105954619A
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- sheffield plate
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- circuit board
- frequency circuit
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/001—Measuring interference from external sources to, or emission from, the device under test, e.g. EMC, EMI, EMP or ESD testing
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- Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
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Abstract
The present invention discloses a field sensitive electromagnetic pulse protective material performance test device. The field sensitive electromagnetic pulse protective material performance test device is characterized in that a high-frequency circuit board is arranged inside a shielding shell vertically, a ground wire is arranged in a via hole at the upper part of the high-frequency circuit board, and a micro-strip signal line is arranged below the right side of the high-frequency circuit board; the two ends of the micro-strip signal line are connected with a signal input port and a signal output port which are arranged at the two sides of the shielding shell, and the backsides of the micro-strip signal line, the ground wire and the high-frequency circuit board are clad with copper; the backside of the high-frequency circuit board is electrically connected with the shielding shell, and the micro-strip signal line, the ground wire and the high-frequency circuit board are equipotential; a first silver plated copper plate is welded at the middle part of the micro-strip signal line vertically, a second silver plated copper plate is welded on the ground wire, and the first and second silver plated copper plates are arranged up and down and form a space in which a to-be-tested material is fixed. The field sensitive electromagnetic pulse protective material performance test device solves the problem in the prior art that the response time and the resistivity of a field sensitive electromagnetic pulse protective material can not be tested.
Description
Technical field
The present invention relates to electromagnetic compatibility experimental technique field, particularly relate to a kind of field sensitive type Spark gap material properties test device.
Background technology
Preferably field sensitive type environment self-adaption microwave defense material is insulant in the case of low field intensity at ordinary times, electromagnetic wave do not had shielding action, when by outside strong electromagnetic pulse interference or attack when, the when that i.e. external electromagnetic field dramatically increasing suddenly and exceedes certain critical field strength, due to the distinctive electrochemistry of material and energy-structure feature, can the change of perception external electromagnetic environment can quickly regulate its electromagnetic performance, can occur immediately upon insulation/conduction phase transition phenomena in micro-nanoseconds, electrical conductivity can promote 102～105The order of magnitude, make to rapidly go to for the material of insulator at ordinary times the metalloid material of high connductivity, external electromagnetic wave is produced height reflection and shielding, by strong electromagnetic pulse energy barrier outside protective casing, after external disturbance and attack high field disappear, material returns to initial condition；And the microwave defense material developed based on this working mechanism can undergo phase transition within the time of micro-nano second, test the most accordingly and cannot know, and this kind of microwave defense material itself belongs to new material, how to test its insulator/conductor phase transformation response time under strong electromagnetic pulse and resistivity does not also have relevant report.
Free-space Method in existing material electromagnetism method of testing, the resonance method, coaxial transmission/bounce technique can be used to test the dielectric constant of material, pcrmeability, but these methods broadly fall into the static test of material, it is impossible to measure the dynamic response time of microwave defense material；And at present measurement for response time is mainly used in semiconductor device, such as: Transient Suppression Diode, when measuring, tested semiconductor device can be fixed on test fixture by welding or being inserted directly into corresponding test pin, and due to the special nature of microwave defense material itself, it is impossible to carry out welding or the operation such as insertion；Four probe method may only be used for testing the resistivity of semi-conducting material, its test voltage is the lowest, the resistivity measurement of high field end responsive type microwave defense material cannot be met, therefore, it is badly in need of developing a kind of can be used to test at strong electromagnetic pulse end responsive type microwave defense material response time and the test device of resistivity.
Summary of the invention
The technical problem to be solved is to provide a kind of field sensitive type Spark gap material properties test device, and solving cannot checkout area responsive type microwave defense material response time, the problem of resistivity in prior art.
nullFor solving above-mentioned technical problem，The technical solution used in the present invention is: a kind of field sensitive type Spark gap material properties test device，Including shield shell、High-frequency circuit board、Ground wire、First sheffield plate、Second sheffield plate、Micro-strip holding wire、Signal input port and signal output port，Described high-frequency circuit board is mounted vertically in shield shell，High-frequency circuit board top via installs ground wire，Micro-strip holding wire is installed below high-frequency circuit board front，Micro-strip holding wire two ends connect signal input port and the signal output port being positioned at shield shell both sides，Described micro-strip holding wire、Ground wire and high-frequency circuit back cover copper，High-frequency circuit back is electrically connected with shield shell、And high-frequency circuit board、Ground wire and shield shell isoelectric level，First sheffield plate is vertically welded in the middle part of micro-strip holding wire，Described second sheffield plate is welded on ground wire，First sheffield plate and the second sheffield plate are in arranging up and down，First sheffield plate and the second sheffield plate form the space of fixing detected materials，The relative area of the first sheffield plate and the second sheffield plate and the ratio of relative distance are 20:1 10:1.
Described first sheffield plate and the second sheffield plate structure are identical, all include top sheffield plate and bottom sheffield plate, top sheffield plate and bottom sheffield plate are installed by means of screw, the bottom sheffield plate of described first sheffield plate welds with micro-strip holding wire, the top sheffield plate of the first sheffield plate is arranged on directly over the sheffield plate of bottom by means of screw, and the structure of described second sheffield plate and the structure of the first sheffield plate are upper and lower symmetrical structure.
Distance between described first sheffield plate and signal input port is the 2/3 of micro-strip holding wire length, and the horizontal range between described second sheffield plate and signal input part is equal to the 2/3 of ground line length.
A length of 103.3mm of described micro-strip holding wire, a width of 2.74mm, described micro-strip holding wire, the characteristic impedance of signal input port are 50 Ω.
Described shield shell is aluminum mass shell body.
Use and have the beneficial effects that produced by technique scheme: by installing high-frequency circuit board and ground wire in shield shell, make high-frequency circuit board, ground wire and shield shell isoelectric level, first sheffield plate and the second sheffield plate be arranged in parallel, external equipment can provide uniform field intensity after applying voltage, the size of field intensity residing for measured material is adjusted by adjusting the distance between the first sheffield plate and the second sheffield plate, compared with existing apparatus, there is simple in construction, volume is little, test result is reproducible and degree of stability is high advantage.
Accompanying drawing explanation
Fig. 1 is the structural representation of the present invention；
Fig. 2 is application system schematic diagram of the present invention；
Wherein: 1, shield shell；2, micro-strip holding wire；3, ground wire；4, signal input port；5, signal output port；6, the first sheffield plate；7, the second sheffield plate；8, high-frequency circuit board.
Detailed description of the invention
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is clearly and completely described, it is clear that described embodiment is only a part of embodiment of the present invention rather than whole embodiments.Based on the embodiment in the present invention, the every other embodiment that those of ordinary skill in the art are obtained under not making creative work premise, broadly fall into the scope of protection of the invention.
Elaborate a lot of detail in the following description so that fully understanding the present invention, but the present invention can also use other to be different from alternate manner described here to be implemented, those skilled in the art can do similar popularization in the case of intension of the present invention, and therefore the present invention is not limited by following public specific embodiment.
nullAs shown in Figure 1，The invention discloses a kind of field sensitive type Spark gap material properties test device，Including shield shell 1、High-frequency circuit board 8、Ground wire 3、First sheffield plate 6、Second sheffield plate 7、Micro-strip holding wire 2、Signal input port 4 and signal output port 5，High-frequency circuit board 8 is mounted vertically in shield shell 1，High-frequency circuit board 8 top via installs ground wire 3，Micro-strip holding wire 2 is installed below high-frequency circuit board 8 front，Micro-strip holding wire 2 two ends connect signal input port 4 and the signal output port 5 being positioned at shield shell 1 both sides，Micro-strip holding wire 2、Copper is covered at ground wire 3 and high-frequency circuit board 8 back side，High-frequency circuit board 8 back side is electrically connected with shield shell 1、And high-frequency circuit board 8、Ground wire 3 and shield shell 1 isoelectric level，First sheffield plate 6 is vertically welded in the middle part of micro-strip holding wire 2，Second sheffield plate 7 is welded on ground wire 3，First sheffield plate 6 and the second sheffield plate 7 are in arranging up and down，First sheffield plate 6 and the second sheffield plate 7 form the space of fixing detected materials，First sheffield plate 6 and the relative area of the second sheffield plate 7 are 20:1 10:1 with the ratio of relative distance；First sheffield plate 6 is identical with the second sheffield plate 7 structure, all include top sheffield plate and bottom sheffield plate, top sheffield plate and bottom sheffield plate are installed by means of screw, the bottom sheffield plate of the first sheffield plate 6 welds with micro-strip holding wire 2, the top sheffield plate of the first sheffield plate 6 is arranged on directly over the sheffield plate of bottom by means of screw, and the structure of the second sheffield plate 7 is upper and lower symmetrical structure with the structure of the first sheffield plate 6；Distance between first sheffield plate 6 and signal input port 4 is the 2/3 of micro-strip holding wire 2 length, and the horizontal range between the second sheffield plate 7 and signal input part is equal to the 2/3 of ground wire 3 length；A length of 103.3mm of micro-strip holding wire 2, a width of 2.74mm, micro-strip holding wire 2, the characteristic impedance of signal input port 4 are 50 Ω；Shield shell 1 is aluminum mass shell body.
The present invention is in use, use high-frequency noise simulator as signal source, the high-frequency noise simulator signal input port by coaxial cable connecting test device, the signal output port of test device connects attenuator, oscilloscope display is passed through through the signal of overdamping, high-frequency noise simulator is as signal input sources, for test system provider ripple signal input；Coaxial cable connects outfan and the signal input port of test device of high-frequency noise simulator, if both port types are inconsistent, also need to add corresponding adaptor, owing to the magnitude of voltage of output square wave reaches upper kilovolt, oscillographic voltage tolerance range only has tens volts, therefore needs to connect the attenuator of relevant parameter between test device and oscillograph, finally, by oscilloscope display output waveform, determined response time and the resistivity of measured material by the waveform of observation oscilloscope.
Owing to measured material is field sensitive type microwave defense material, this material is state of insulation in the case of usually, can undergo phase transition under strong electromagnetic pulse, become metalloid material, thus needing to make measured material test under the highest field intensity, and then require that board substrate, input port and output port can bear high voltage, circuit board uses politef, thickness 1mm, input port and output port use the N connector that can bear high pressure.
Before testing, need first to carry out checking test, judge that test device itself does not produce any impact to test result, the method judged is: in the case of test device not tape test material, give signal input port one square-wave signal of input of test device, if test device has good impedance matching and high pressure resistant property, the output signal so shown on oscillograph by test device signal output port should be completely the same with former input square wave, and this also demonstrates that this test device does not interferes with the test of measured material characteristic.The most consistent by the amplitude of verification experimental verification, input waveform and output waveform, pulse width, rising edge.
nullTest material is fixed between two groups of silver-plated copper billets，Measured material is made to ensure good electrical connection，The output voltage of regulation high-frequency noise simulator and pulse width，Input waveform is provided for test device，Measured material is made to be under a uniform field intensity，Output waveform is observed by oscillograph，If output waveform is consistent with former input waveform，That is exactly that measured material is also in state of insulation，Measured material is not acted upon in test circuit，The most progressively heighten the voltage of input waveform，And then the field intensity residing for raising measured material，If output waveform there occurs change，Just explanation measured material is dropped to hundred Ω levels in a short period of time by original M Ω level，By observing the change of output waveform voltage magnitude it is estimated that the resistivity of measured material，The sudden change found by observing output waveform calculates its response time，The field intensity changed is exactly the field intensity threshold value that measured material can be made to undergo phase transition，Adjustment for field intensity，Mainly by adjusting what the voltage of input waveform realized，Voltage Cortrol uses approximatioss to be adjusted，Such as initial boosting step pitch is 500V，When measured material undergoes phase transition，Input voltage declines 500V，Approximatioss is used to be adjusted again，Second time adjusts step pitch and reduces，The step pitch of 100V can be selected，Repeat the above steps determines the field intensity threshold value making measured material undergo phase transition.
It is found by experiment that, described test device has certain requirement to the performance of measured material, if measured material does not reaches this and requires just to cannot be carried out test, this is because micro-strip holding wire in test device, input port, output port, oscillograph input impedance are 50 Ω, phase transformation is there occurs under measured material is in high field, it is made to sport metalloid material from insulant, after sudden change, the equivalent resistance of metalloid material is if able to reach below 1k Ω, the response time of micro-nanosecond, measured material just can be tested by described test device.
In a word, the present invention is by installing high-frequency circuit board and ground wire in shield shell, make high-frequency circuit board, ground wire and shield shell isoelectric level, first sheffield plate and the second sheffield plate be arranged in parallel, external equipment can provide uniform field intensity after applying voltage, adjust the size of field intensity residing for measured material by adjusting distance between the first sheffield plate and the second sheffield plate, compared with existing apparatus, there is simple in construction, volume is little, test result is reproducible and degree of stability is high advantage.
Claims (5)
- null1. a field sensitive type Spark gap material properties test device，It is characterized in that: include shield shell (1)、High-frequency circuit board (8)、Ground wire (3)、First sheffield plate (6)、Second sheffield plate (7)、Micro-strip holding wire (2)、Signal input port (4) and signal output port (5)，Described high-frequency circuit board (8) is mounted vertically in shield shell (1)，High-frequency circuit board (8) top via installs ground wire (3)，Micro-strip holding wire (2) is installed below high-frequency circuit board (8) front，Micro-strip holding wire (2) two ends connect signal input port (4) and the signal output port (5) being positioned at shield shell (1) both sides，Described micro-strip holding wire (2)、Copper is covered at ground wire (3) and high-frequency circuit board (8) back side，High-frequency circuit board (8) back side is electrically connected with shield shell (1)、And high-frequency circuit board (8)、Ground wire (3) and shield shell (1) isoelectric level，First sheffield plate (6) is vertically welded in micro-strip holding wire (2) middle part，Described second sheffield plate (7) is welded on ground wire (3)，First sheffield plate (6) and the second sheffield plate (7) are in arranging up and down，First sheffield plate (6) and the second sheffield plate (7) form the space of fixing detected materials，The relative area of the first sheffield plate (6) and the second sheffield plate (7) and the ratio of relative distance are 20:1 10:1.
- Field sensitive type Spark gap material properties test device the most according to claim 1, it is characterized in that: described first sheffield plate (6) is identical with the second sheffield plate (7) structure, all include top sheffield plate and bottom sheffield plate, top sheffield plate and bottom sheffield plate are installed by means of screw, the bottom sheffield plate of described first sheffield plate (6) welds with micro-strip holding wire (2), the top sheffield plate of the first sheffield plate (6) is arranged on directly over the sheffield plate of bottom by means of screw, the structure of described second sheffield plate (7) and the structure of the first sheffield plate (6) are upper and lower symmetrical structure.
- Field sensitive type Spark gap material properties test device the most according to claim 2, it is characterized in that: distance is micro-strip holding wire (2) length 2/3 between described first sheffield plate (6) and signal input port (4), the horizontal range between described second sheffield plate (7) and signal input part is equal to the 2/3 of ground wire (3) length.
- Field sensitive type Spark gap material properties test device the most according to claim 3, it is characterized in that: a length of 103.3mm of described micro-strip holding wire (2), a width of 2.74mm, described micro-strip holding wire (2), the characteristic impedance of signal input port (4) are 50 Ω.
- Field sensitive type Spark gap material properties test device the most according to claim 4, it is characterised in that: described shield shell (1) is aluminum mass shell body.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201610332463.7A CN105954619B (en) | 2016-05-18 | 2016-05-18 | Field sensitive type Spark gap material properties test device |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201610332463.7A CN105954619B (en) | 2016-05-18 | 2016-05-18 | Field sensitive type Spark gap material properties test device |
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| CN105954619B CN105954619B (en) | 2018-08-21 |
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Cited By (3)
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| CN107367648A (en) * | 2017-06-23 | 2017-11-21 | 中国电子科技集团公司第十三研究所 | Microwave monolithic circuit immunity to interference test fixture |
| CN108776153A (en) * | 2018-08-07 | 2018-11-09 | 中国人民解放军陆军工程大学 | The series connection microstrip line for measuring material phase transformation performance tests system |
| CN112763935A (en) * | 2019-10-21 | 2021-05-07 | 瑞昱半导体股份有限公司 | Test system, transmitter and receiver for performing multiple tests |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107367648A (en) * | 2017-06-23 | 2017-11-21 | 中国电子科技集团公司第十三研究所 | Microwave monolithic circuit immunity to interference test fixture |
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| CN108776153A (en) * | 2018-08-07 | 2018-11-09 | 中国人民解放军陆军工程大学 | The series connection microstrip line for measuring material phase transformation performance tests system |
| CN108776153B (en) * | 2018-08-07 | 2023-11-21 | 中国人民解放军陆军工程大学 | Series microstrip line test system for measuring phase change performance of material |
| CN112763935A (en) * | 2019-10-21 | 2021-05-07 | 瑞昱半导体股份有限公司 | Test system, transmitter and receiver for performing multiple tests |
| CN112763935B (en) * | 2019-10-21 | 2024-05-14 | 瑞昱半导体股份有限公司 | Test system, transmitter and receiver for performing multiple tests |
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| CN105954619B (en) | 2018-08-21 |
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