CN105939549A - Driver of light emitting diode and related lighting system - Google Patents
Driver of light emitting diode and related lighting system Download PDFInfo
- Publication number
- CN105939549A CN105939549A CN201610090841.5A CN201610090841A CN105939549A CN 105939549 A CN105939549 A CN 105939549A CN 201610090841 A CN201610090841 A CN 201610090841A CN 105939549 A CN105939549 A CN 105939549A
- Authority
- CN
- China
- Prior art keywords
- led
- driver
- hemt
- diode
- constant current
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 38
- 229910052751 metal Inorganic materials 0.000 claims description 79
- 239000002184 metal Substances 0.000 claims description 79
- 230000005611 electricity Effects 0.000 claims description 13
- 238000000059 patterning Methods 0.000 claims description 12
- 230000005669 field effect Effects 0.000 claims description 8
- 238000012423 maintenance Methods 0.000 claims description 4
- 238000009413 insulation Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 26
- 239000000463 material Substances 0.000 description 10
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 10
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 9
- 238000005286 illumination Methods 0.000 description 9
- 239000010931 gold Substances 0.000 description 8
- 239000011435 rock Substances 0.000 description 8
- 230000004888 barrier function Effects 0.000 description 7
- 230000008859 change Effects 0.000 description 7
- 229910002601 GaN Inorganic materials 0.000 description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 6
- 229910052737 gold Inorganic materials 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 239000010936 titanium Substances 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 5
- 238000013461 design Methods 0.000 description 5
- 238000004020 luminiscence type Methods 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 229910052719 titanium Inorganic materials 0.000 description 5
- 230000033228 biological regulation Effects 0.000 description 4
- 238000012937 correction Methods 0.000 description 4
- 229910044991 metal oxide Inorganic materials 0.000 description 4
- 150000004706 metal oxides Chemical class 0.000 description 4
- 229910052697 platinum Inorganic materials 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 239000011241 protective layer Substances 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 238000005538 encapsulation Methods 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- XYDVHKCVOMGRSY-UHFFFAOYSA-N 4-(4-benzylphenyl)-1,3-thiazol-2-amine Chemical compound S1C(N)=NC(C=2C=CC(CC=3C=CC=CC=3)=CC=2)=C1 XYDVHKCVOMGRSY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 101001050286 Homo sapiens Jupiter microtubule associated homolog 1 Proteins 0.000 description 2
- 101000928034 Homo sapiens Proteasomal ubiquitin receptor ADRM1 Proteins 0.000 description 2
- 102100023133 Jupiter microtubule associated homolog 1 Human genes 0.000 description 2
- 241001025261 Neoraja caerulea Species 0.000 description 2
- 102100036915 Proteasomal ubiquitin receptor ADRM1 Human genes 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000005034 decoration Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- FFEARJCKVFRZRR-UHFFFAOYSA-N methionine Chemical compound CSCCC(N)C(O)=O FFEARJCKVFRZRR-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B45/00—Circuit arrangements for operating light-emitting diodes [LED]
- H05B45/30—Driver circuits
- H05B45/345—Current stabilisation; Maintaining constant current
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/42—Circuits or arrangements for compensating for or adjusting power factor in converters or inverters
- H02M1/4208—Arrangements for improving power factor of AC input
- H02M1/4266—Arrangements for improving power factor of AC input using passive elements
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/02—Conversion of ac power input into dc power output without possibility of reversal
- H02M7/04—Conversion of ac power input into dc power output without possibility of reversal by static converters
- H02M7/06—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes without control electrode or semiconductor devices without control electrode
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
The invention provides a driver of a light emitting diode and a related lighting system. The embodiment discloses a driver, which is used for driving a light-emitting element and comprises a rectifying circuit and a current driving circuit. The rectifying circuit comprises at least one rectifying diode electrically connected to an alternating current input power supply and used for generating a direct current power supply and striding between a direct current power supply line and a grounding line. The current driving circuit comprises at least one constant current source. The constant current source and the light-emitting element are connected in series between the direct current power line and the grounding line. The constant current source can provide a constant current to drive the light-emitting element. The rectifying diode and the constant current source are formed together on a single semiconductor chip.
Description
Technical field
The present invention relates to the driver of driven for emitting lights diode and relevant illuminator, particularly relate to one and have simply
The driver of framework and illuminator.
Background technology
In recent years, because good electro-optical efficiency and less small product size, light emitting diode (light-
Emitting diode) the most gradually replace negative electrode fluorescent tube or tungsten filament, as backlight or the light source of illuminator.Only
Be because the voltage-current characteristic of light emitting diode (about 3 volts, DC powered), the alternating current input power supplying of general civil power without
Method direct driven for emitting lights diode, but need a power supply changeover device, alternating current input power supplying is converted into suitable DC source.
Electric consumption on lighting often takies the part that mains-supplied is the biggest.Therefore for the power supply changeover device used by illumination, method
On Gui in addition to having required low-down conversion loss, it is necessary to (power factor arrives between 0 to be provided with good power factor
Between 1).The power factor of one electronic installation, the closer to 1, represents that this electronic installation is closer to resistive load.
Fig. 1 is known illuminator 10, wherein has bridge rectifier 12, power factor corrector (power factor
Corrector) 14, LED drive circuit 16 and a LED 18.Power factor corrector 14 can be a booster circuit
(booster), LED drive circuit 16 can be a reduction voltage circuit (buck converter).But, such as booster circuit or fall
Switch type power converter as volt circuit, not only needs to use bulky and expensive inductance element, whole system framework
It is also required to use very many electronic components.Therefore, use the illuminator of switch type power converter, because its production cost is high
High comparison does not has the market competitiveness.
Summary of the invention
Embodiment discloses a kind of driver, in order to drive a light-emitting component, includes a rectification circuit and an electric current
Drive circuit.Rectification circuit comprises a commutation diode, is electrically connected to an alternating current input power supplying, in order to produce a DC source,
Across between a direct current supply line and an earth lead.Current driving circuit comprises a constant current source.This constant current source with should
Light-emitting component is serially connected with between direct current supply line and earth lead.This constant current source can provide a constant current, drives this luminescence
Element.Commutation diode and constant current source, be collectively forming on a single semiconductor chip.
Accompanying drawing explanation
Fig. 1 is known illuminator.
Fig. 2 shows the LED driver of a foundation one embodiment of the invention.
Fig. 3 shows three voltage waveforms.
The pattern of the metal level on Fig. 4 A display semiconductor chip.
Fig. 4 B show the semiconductor die package of Fig. 4 A after an integrated circuit schematic.
Fig. 5 shows the profile along line ST-ST of the HEMT T1 in Fig. 4 A.
Fig. 6 shows the profile along line SD-SD of the diode DVF3 in Fig. 4 A.
Fig. 7 shows the illuminator according to one embodiment of the invention.
Fig. 8 shows the LED driver according to another embodiment of the present invention.
Fig. 9 A shows the pattern of the metal level on second half conductor chip.
Fig. 9 B show the semiconductor die package of Fig. 9 A after an integrated circuit schematic.
Figure 10 shows the illuminator according to another embodiment of the present invention.
Figure 11 shows the circuit diagram that LED and an extra electric capacity of voltage regulation are in parallel.
Figure 12 shows the pattern of the metal level on second half conductor chip.
Figure 13 shows the chip profile figure according to another kind of embodiment along line SD-SD of the diode DVF3 in Fig. 4 A.
Figure 14 shows the flow chart that can be used to make the diode in Figure 13.
Figure 15 shows the metal oxide semiconductcor field effect transistor (MOSFET) according to one embodiment of the invention and HEMT
Middle IDS is to VDS relation.
Figure 16 shows the LED driver according to another embodiment of the present invention.
Figure 17 shows the pattern according to the metal level on the semiconductor chip of one embodiment of the invention.
Figure 18 show the semiconductor die package of Figure 17 after an integrated circuit.
Figure 19 shows the illuminator using the integrated circuit in Figure 18 to realize.
Figure 20 shows the circuit design of the LED driver according to one embodiment of the invention.
Figure 21 shows the LED driver according to further embodiment of this invention, has multiple LED.
Figure 22 shows the profile of the diode chip for backlight unit according to one embodiment of the invention.
Figure 23 shows the LED driver according to another embodiment of the present invention.
Figure 24 shows a bridge rectifier.
Figure 25 illustrates and shows semiconductor chip, and it can realize the bridge rectifier in Figure 24.
Figure 26 A, 26B and 26C display semiconductor chip 808 along line CSV1-CSV1, CSV2-CSV2 with CSV3-CSV3's
Chip profile figure.
Figure 27 shows another bridge rectifier.
Figure 28 illustrates and shows semiconductor chip, and it can realize the bridge rectifier in Figure 27.
Figure 29 A shows the enhancement mode HEMT ME on semiconductor chip and the HEMT MD of a depletion type.
Figure 29 B then shows the electrical connection in Figure 29 A between HEMT MD and ME.
Figure 30 then shows in Figure 29 A, along the chip profile figure of line CSV4-CSV4.
Figure 31 shows the LED driver according to one embodiment of the invention.
Figure 32 shows the voltage waveform of the alternating current input power supplying VAC-IN in Figure 31 and flows through bridge rectifier 844
One current waveform.
Figure 33 shows a LED driver of a critesistor with positive temperature coefficient.
Figure 34 shows a LED driver of a critesistor with negative temperature coefficient.
Figure 35 shows another LED driver with critesistor.
Reference numerals list
10 illuminator 12 bridge rectifiers
14 power factor corrector 16 LED drive circuits
18,18B, 18R LED 19 electric capacity of voltage regulation
60 LED driver 62 bridge rectifiers
64 valley fill circuit 66 current driving circuits
67 dotted line 72,74,76 voltage waveforms
80 semiconductor chip 92 silicon base
94 cushions 95,95a platform area
96 channel layer 98 high price interband gap layer
100 cap rock 102 metal levels
102a, 102b, 102c, 102d, 102e sheet metal
103 insulating barrier 104 metal levels
104a, 104b, 104c, 104d, 104e, 104f, 104g, 104h sheet metal
105 protective layer 120 Diode symbol
130 integrated circuit 140,142,144,146,148 steps
150,152 curves 170 adjust district
200 illuminator 300 LED drivers
302 current driving circuit 330 illuminators
500 LED driver 502 bridge rectifiers
504 current driving circuit 518,5181,5182,5183 LED
5201,5202,5203,5204 LED segment
550 semiconductor chip 552 integrated circuits
560 illuminator 600 LED drivers
700 LED driver 800 LED drivers
802 TRIAC dimmer 806 bridge rectifiers
808 semiconductor chip 810 bridge rectifiers
812 semiconductor chip 840 LED drivers
848 LED 850 resistance
852 Schottky diode 900 LED drivers
902,906 critesistor 910 LED driver
AC+, AC-exchange input pin AC1, AC2 AC power cord
The upper and lower two-arm of ARM1, ARM2 upper arm ART, ARB
C1, C2, CF electric capacity CC1, CC2, CC3, CC4 current switch
DB1-DB4 commutation diode DVF1-DVF3 diode
D end points D1, D2 drive pin
GD, GE grid G ND earth lead
GG gate region IC1, IC2 segment circuit
ME, MD HEMT PF1, PF2 correct pin
S end points S1, S2 drive pin
SBD1, SBD2, SBD3, SBD4 Schottky diode
T1, T2, T3, T4 HEMT T5, T6, T7, T8 depletion type HEMT
TP1, TP2, TP3 period VAC-IN alternating current input power supplying
VCC high-voltage pin VDC-IN DC source
VDD direct current supply line VPEAK voltage peak
VSS low-voltage pin
Detailed description of the invention
In this manual, identical symbol the most generally represents have identical or similar structure, merit
Energy, the element of principle, and can deduce according to the teaching of this specification for those skilled in the art.Succinct degree for description
Considering, the element of identical symbol will no longer repeat.
In one embodiment of this invention, whole LED illumination System has succinct circuit design, and main element only has envelope
Equipped with an integrated circuit of a single semiconductor chip (chip), two electric capacity and the LED as light source.In embodiment
LED illumination System can need not connect extra inductance element.Therefore, the circuit cost of LED illumination System will be suitable
Low.Additionally, the LED illumination System in embodiment also provides the most excellent power factor, most of specification can be met
Requirement.
Fig. 2 shows the LED driver 60 of a foundation one embodiment of the invention, and it can be used to drive LED18.LED 18 is permissible
Being a high-voltage LED, by many miniature LED (micro LED), being chained together is constituted.For example, in one embodiment,
The forward voltage of each miniature LED about 3.4 volts, and LED 18 micro-LED strip connection more than 10 forms, its equivalence forward voltage
(forward voltage) about 50V.
LED driver 60 substantially has three grades.The first order being connected to alternating current input power supplying VAC-IN is bridge rectifier 62.
The second level is valley fill circuit (valley-fill circuit) 64, as a power factor corrector, can improve whole LED
The power factor of driver 60.The third level has two high electron mobility transistors (high electron mobility
transistor；HEMT) T1 and T2, as current driving circuit 66.HEMT T1 Yu T2 can be respectively as a constant current source
Use or after parallel connection as a constant current source that can provide bigger current values.As a example by HEMT T1, when its drain-source electricity
When pressure (drain-to-source voltage, VDS) is sufficiently large, drain-source current (drain-to-source current,
IDS), namely flowing to the electric current of source electrode from drain electrode, will be about a constant, change little with VDS, HEMT T1 is substantially
There is provided a constant current, in order to drive LED 18.
Bridge rectifier 62 includes four commutation diode DB1-DB4.Will be described below, these four commutation diodes can
To be all Schottky diode (Schottky Barrier Diode；SBD).Bridge rectifier 62 is by alternating current input power supplying VAC-
IN rectification, in order to produce DC source VDC-IN, across between direct current supply line VDD and earth lead GND.For example, exchange
Input power VAC-IN can be 110VAC or 220VAC that general civil power is provided.
Valley fill circuit 64 is electrically connected between direct current supply line VDD and earth lead GND, includes three diode DVF1-
DVF3 and electric capacity C1, C2.Diode DVF1-DVF3 is inversely serially connected with between direct current supply line VDD and earth lead GND.Real at this
Executing in example, the capacitance of electric capacity C1 with C2 is approximately equivalent, but the invention is not restricted to this.In theory, the electric capacity electricity of electric capacity C1 Yu C2
Pressure VC1 Yu VC2 about can be charged to the half (0.5*VPEAK) of the voltage peak VPEAK of DC source VDC-IN.And work as
When the absolute value of voltage of alternating current input power supplying VAC-IN is less than 0.5*VPEAK, electric capacity C1 Yu C2 can to direct current supply line VDD and
Earth lead GND discharges.As long as electric capacity C1 Yu C2 is enough big, valley fill circuit 64 can make the valley voltage of DC source VDC-IN big
Approximate 0.5VPEAK, it is provided that enough voltage makes LED 18 continuous illumination.
HEMT T1 Yu T2 is depletion type (depletion mode) transistor, it is meant that their critical voltage
(threshold voltage, VTH) is all negative value.Each HEMT has a grid (gate) and two passage poles, and this two
Passage is the most typically also called source electrode (source) and drain electrode (drain).The grid (gate) of each HEMT T1 Yu T2 and source electrode
(source) short cut with each other.As a example by HEMT T1, when its drain-source voltage (drain-to-source voltage, VDS) is enough
Time big, drain-source current (drain-to-source current, IDS), the electric current of source electrode is namely flowed to from drain electrode, will about
It is a constant, almost unrelated with VDS.So, no matter HEMT is T1 or T2, can be about as a constant current source, it is provided that steady
A fixed constant current drives LED 18, makes the luminous intensity of LED 18 remain certain, does not have flicker problem.In fig. 2,
HEMT T1 drives LED 18, and both, together as load (load), are serially connected between direct current supply line VDD and earth lead GND.
Fig. 2 is connected to HEMT T2 Yu LED 18 with dotted line 67, represents that HEMT T2 can optionally combine HEMT T1 and together drive
LED 18, will be explained in after a while.
Fig. 3 shows alternating current input power supplying VAC-INVoltage waveform 72, DC source V when not having a valley fill circuit 64DC-IN's
Voltage waveform 74 and DC source V when having valley fill circuit 64DC-INVoltage waveform 76.For example, alternating current input power supplying
VAC-INIt is 220VAC, is a sine wave, as shown in Figure 3.Voltage waveform 74 represents virtual result when not having valley fill circuit 64.
Without valley fill circuit 64, bridge rectifier 62 will provide simple all wave rectification, so can be by voltage in voltage waveform 72
Value is negative part, is just transformed into, as shown in voltage waveform 74.Trough in voltage waveform 74 can be filled out by valley fill circuit 64
Enter, or make the most so deep, as shown in voltage waveform 76 of the trough in voltage waveform 74.For the convenience on describing,
The following description will use voltage waveform 74 to explain the sequential that event occurs sometimes.For example, voltage waveform 74 arrives ripple
During peak, represent voltage waveform 72 (alternating current input power supplying VAC-IN) arrive crest or during trough.
Period TP1 is from the beginning of voltage waveform 74 is more than or equal to voltage waveform 76, until voltage waveform 74 rises directly in time
Terminate to peak value VPEAK.In period TP1, the electric energy of LED 18 luminescence will directly from alternating current input power supplying VAC-IN, so
Voltage waveform 76 is equal to voltage waveform 74.Now, once the voltage of DC source VDC-IN is more than capacitance voltage VC1 Yu VC2 two
The sum of person, electric capacity C1 with C2 will be charged by alternating current input power supplying VAC-IN.As voltage waveform 74 peaking VPEAK, electricity
Holding voltage VC1 Yu VC2 can be the most all 0.5VPEAK.
Period TP2 by reaching peak value VPEAK, drops to half peak value until voltage waveform 74 from voltage waveform 74
(1/2VPEAK) till.In period TP2, voltage waveform 74 begins to decline in time, and the electric energy of LED 18 luminescence will be directly
From alternating current input power supplying VAC-IN, so voltage waveform 76 is equal to voltage waveform 74.Because electric capacity C1 Yu C2 does not has discharge and recharge,
Capacitance voltage VC1 Yu VC2 will be maintained at 0.5VPEAK.
From the beginning of period TP3 is after voltage waveform 74 is less than 0.5VPEAK, it it is exactly about the trough appearance of voltage waveform 74
Time.In period TP3, electric capacity C1 can be discharged by diode DVF3, supplies electricity to HEMT T1 Yu LED 18.Similarly, electricity
Hold C2 to be discharged by diode DVF1, equally supply electricity to HEMT T1 Yu LED 18.Capacitance voltage VC1 Yu VC2 will over time
Reduce, depending on the capacitance of speed apparent capacity C1 Yu C2 of reduction.Period TP3 terminates at voltage waveform 74 after trough rebounds
During higher than capacitance voltage VC1 or VC2.Continued by another period TP1 afterwards.As shown in the voltage waveform 76 of Fig. 3, if electric
Holding C1 Yu C2 enough big, DC source VDC-IN is it is possible to provide enough voltage to make LED 18 continuous illumination.
As long as electric capacity C1 Yu C2 is enough big, the power factor that valley fill circuit 64 is reached can meet the merit of most countries
Rate factor command.
In one embodiment, the commutation diode DB1-DB4 in Fig. 2, diode DVF1-DVF3 and HEMT T1 with
T2, is collectively forming on a single semiconductor chip.The figure of the metal level 104 on Fig. 4 A display semiconductor chip 80
Diode in case, and sign picture 2 and the HEMT relative position on semiconductor chip 80.Semiconductor chip 80 can be one with
Gallium nitride is monolithic integrated microwave circuit (the monolithic microwave of conductive channel material (GaN-based)
integrated circuit；MMIC).In Figure 4 A, the component structure of each diode is the most similar, is all a Xiao Te
Based diode, and the component structure of HEMT T1 with T2 is the most similar.Fig. 5 shows, the HEMT T1 in Fig. 4 A is along line ST-ST
Chip profile figure；Fig. 6 shows, the diode DVF3 in Fig. 4 A is along the chip profile figure of line SD-SD.In figure other two
Pole is managed the component structure with HEMT and can be analogized and learn.
In the example of Fig. 5, the cushion 94 in silicon base 92 can be the intrinsic doped with carbon (C-doped)
(intrinsic)GaN.Channel layer 96 can be intrinsic (intrinsic) GaN, and it is formed a high price band gap (high-
Bandgap) layer 98, its material can be the AlGaN of intrinsic.Cap rock 100 can be intrinsic GaN.Cap rock 100, at high price interband gap layer
98 are patterned with channel layer 96 and become a platform area 95 (mesa).Two-dimensional electron cloud (2D-electron gas) can be with shape
The SQW (quantum well) of high price interband gap layer 98 it is adjacent to, as conductive channel in becoming channel layer 96.Patterning
(patterned) material of metal level 102 can be the laminated of titanium, aluminum or both materials.In Figure 5, metal level 102
Above platform area 95, form two sheet metals (metal strips) 102a, 102b, form two with platform area 95 respectively
Ohmic contact (ohmic contact) so that sheet metal 102a, 102b are respectively as the source electrode of HEMT T1 and drain electrode.Metal level
The material of 104 can be the laminated of titanium, gold or both materials.For example, from bottom to top, metal level 104 has a nickel dam
(Ni), a layers of copper (Cu) and a platinum layer (Pt), wherein platinum layer can increase the sheath 105 formed after a while adhesion each other
Degree (adhesion), the problem preventing from being peeling when weld pad process.In other embodiments, metal level 104 can also be
Nickel dam (Ni), layer gold (Au) and platinum layer (Pt) laminated, or nickel dam (Ni), layer gold (Au) and titanium layer (Ti) is laminated.
In Figure 5, the metal level 104 of patterning defines sheet metal 104a, 104b and 104c.Sheet metal 104b contacts platform area 95
Overcentre, form a Schottky contacts (schottky contact), as the grid of HEMT T1.104a in Fig. 5 with
104c contacts 102a, 102b respectively, it is provided that the source electrode of HEMT T1 arrives the electric connection of other electronic components with drain electrode.Please be same
Time with reference to Fig. 5 Yu Fig. 4 A, it appeared that the grid of HEMT T1 (sheet metal 104b), by metal level 104, be shorted to sheet metal
104a, is also shorted to the source electrode of HEMT T1.The right half of Fig. 5 then shows the equivalent circuit diagram of HEMT T1.On metal level 104
Side's matcoveredn 105, its material can be silicon oxynitride (silicon oxinitride, SiON).Protective layer 105 is by pattern
Change, be used for forming weld pad (bonding pad) required during encapsulation.For example, in Fig. 5, left half of protective layer 105 does not has
The part covered, can be soldered to the bonding wire (bonding wire) of low-voltage pin VSS (will explain after a while)；And right half of protect
The part that sheath 105 does not cover, can be soldered to drive the bonding wire of pin D1 (will explain after a while).
For succinct reason, the same or similar part of Fig. 6 with Fig. 5 is not repeated.In Fig. 6, metal level 102 is in platform area
The top of 95 forms two sheet metals 102c, 102d, the metal level 104 of patterning then define sheet metal 104d, 104e with
104f.Similar with Fig. 5, sheet metal 104e can be as the grid of a HEMT.Although sheet metal 102d can be as a HEMT's
One source electrode, but on sheet metal 102d, it is not exposed to metal level 104.In another embodiment, sheet metal 102d can omit and
It is formed without.A part of upper surface of sheet metal 104f contact platform area 95 and a sidewall, form another Schottky contacts, permissible
As a Schottky diode, its negative electrode equivalence is shorted to the source electrode of the HEMT of Fig. 6.Please also refer to Fig. 6 Yu Fig. 4 A.Metal
Sheet 104e, by metal level 104, is shorted to sheet metal 104f, and it is the anode of Schottky diode.The right half of Fig. 6 shows
The equivalent circuit of left side connects figure, and circuit behavior is equivalent to a diode.The right half of Fig. 6 shows that one is special simultaneously
Diode symbol 120, carry out the equivalent circuit in representative graph 6.Diode symbol 120 is also used in Fig. 2, represents rectification two pole
Pipe DB1-DB4 and diode DVF1-DVF3, is each two poles being composited by a HEMT and a Schottky diode
Pipe.
Fig. 4 B shows the integrated circuit 130 after being encapsulated by semiconductor chip 80, and it only has 8 pins (pin), respectively
Be: high-voltage pin VCC, correction pin PF1 with PF2, low-voltage pin VSS, exchange input pin AC+ Yu AC-, driving pin
D1 and D2.Referring to Fig. 4 A, wherein also show each pin, by bonding wire (bonding wire), electrical short is to by gold
Belong to the sheet metal that formed after layer 104 patterning, and these sheet metals to also provide electronic component in semiconductor chip 80 relative
Input or the exit point answered are connected with each other.For example, drive pin D1 to be electrically connected to the drain electrode of HEMT T1, correct pin
PF1 is electrically connected to the negative electrode of diode DVF3.
Fig. 7 shows the illuminator 200 implemented according to the present invention.Integrated circuit 130 is fixed on printed circuit board (PCB) 202
On.By the metal wire on printed circuit board (PCB) 202, electric capacity C1 is electrically connected between high-voltage pin VCC and correction pin PF1,
Electric capacity C2 is electrically connected between low-voltage pin VSS and correction pin PF2, and LED 18 is electrically connected to high-voltage pin VCC and drives
Between dynamic pin D1, exchange input pin AC+ Yu AC-is electrically connected to alternating current input power supplying VAC-IN.Can by previous explanation
To understand, the illuminator 200 of Fig. 7 is very succinct, has only used 4 electronic components (two electric capacity C1 Yu C2, integrated circuits 130
With LED 18), the LED driver 60 being achieved that in Fig. 2.There is no expensive and bulky inductance element, illuminator 200
Cost is minimized, and whole small product size can also reduce.
In Fig. 7, the driving pin D2 (being electrically connected to the drain electrode of HEMT T2) of integrated circuit 130, exchange input electricity can be regarded
The alternating voltage of source VAC-IN is different, and decides whether to be electrically connected to LED18.In other words, integrated circuit 130 can be optionally
With only HEMT (T1), or drive LED 18 luminous with two HEMT (T1 with T2) are in parallel.By way of example, it will be assumed that collection
As becoming HEMT T1 and the T2 element size in circuit 130 all, about the same 1u unit constant current can be provided respectively.When
The illuminator 200 of Fig. 7 applies to alternating current input power supplying VAC-IN when being 110VAC, can select forward voltage (forward
Voltage) be the LED of 50V as LED 18, and connect driving pin D1 and D2 mono-play LED 18, LED 18 is now
The power consumed about 2u*50 (=100u).And when the illuminator 200 of Fig. 7 applies to alternating current input power supplying VAC-IN be
During 220VAC, the LED that forward voltage can be selected to be 100V is as LED 18, and only connects driving pin D1 to LED
18, and keep driving pin D2 floating sky to connect, the power that LED 18 is now consumed about 1u*100 (=100u).So, although
The alternating voltage of alternating current input power supplying VAC-IN is different, if the power that the LED, LED 18 selecting forward voltage different consumes
Can about the same (be both about 100u), brightness of illumination produced by that illuminator 200 can be the most also about identical.Change speech
It, integrated circuit 130 is more than being applicable to the alternating current input power supplying of 220VAC, it is possible to be applicable to the exchange input electricity of 110VAC
Source.This is very easily for the manufacturer of illuminator 200, can save part stock's pipe of illuminator 200
Reason cost.
In fig. 2, current driving circuit 66 is connected between LED 18 and earth lead GND, but the present invention is not limited to this.
Fig. 8 shows another LED driver 300 implemented according to the present invention, is used for driving LED 18.In fig. 8, current driving circuit
302 drain electrodes with HEMT T3 and T4, HEMT T3 Yu T4 are electrically connected together direct current supply line VDD, LED 18 and are electrically connected to
Between earth lead GND and current driving circuit 302.The pattern of the metal level 140 on Fig. 9 A display semiconductor chip 310, and
The relative position of the diode in sign picture 8 and HEMT.Fig. 5 also can HEMT T3 in representative graph 9A along the chip of line ST-ST
Profile；Fig. 6 also can diode DVF3 in representative graph 9A along the chip profile figure of line SD-SD.Fig. 9 B shows quasiconductor
An integrated circuit 320 after chip 310 encapsulation, it only has 8 pins (pin), respectively: high-voltage pin VCC, correction pin
PF1 with PF2, low-voltage pin VSS, exchange input pin AC+ Yu AC-, drive pin S1 and S2.Figure 10 shows according to the present invention
Another illuminator 330 implemented, it achieves the LED driver 300 in Fig. 8.Fig. 8,9A, 9B and 10, be referred to elder generation
Front Fig. 2,4A, 4B and 7 and relevant explanation, and learn its principle, operation and advantage, for succinct therefore, be not repeated.
As shown in the embodiment of Figure 11, an extra electric capacity of voltage regulation 19 can be in parallel with LED 18.Electric capacity of voltage regulation 19 can
To reduce the change of the cross-pressure VLED of LED 18, even increase LED 18 within a cycle time of alternating current input power supplying VAC-IN
Working cycle (duty cycle) or fluorescent lifetime, reduce LED 18 and flash the probability of (flickering).
Pattern in Fig. 4 A is merely possible to an example, and the present invention is not limited to this.Figure 12 shows second half conductor cores
The pattern of the metal level 104 on sheet.Figure 12 is approximately similar to Fig. 4 A, for succinct reason, mutually the same or similar part
It is not repeated.In Figure 4 A, it is positioned at a grid in each diode centre position, the most only by metal level after a patterning
The one upper arm ARM1 of 104 is connected to its anode (the such as sheet metal 104f in Fig. 6)；It is positioned at grid in each HEMT centre position
Pole, is the most all to be connected to its source electrode (such as sheet metal in Fig. 5 by a upper arm ARM2 of metal level 104 after a patterning
104a).But, in fig. 12, as illustrated in gate region GG, the grid in each diode centre position, by patterning after
Two-arm ART up and down of metal level 104 and ARB are connected to its anode；And it is positioned at a grid in each HEMT centre position, it is the most all
It is connected to its source electrode by the two-arm up and down of metal level 104 after patterning.Design with Fig. 4 A in comparison, two poles in Figure 12
Two arm configurations up and down of pipe are the most symmetrical on making, less susceptible during the processes such as development, exposure, epitaxy, etching
By the structure compresses space between upper and lower two-arm, (upper and lower two-arm) width can than more consistent, structure comparison do not tend to have breakage or
Person deforms；And the structure of Fig. 4 A is because of only single armed, easily cause whole arm width not when making other parts when making
Consistent situation, and this situation is also easily caused big electric current or the gathering of big voltage and causes and puncture.Therefore Figure 12's is upper
The structure of lower two-arm, because total width is more consistent, is not easy to be deformed by other structure influences so that Figure 12's
Structure has higher breakdown voltage tolerance.
Profile in Fig. 5 with Fig. 6 is the most not used for limiting the scope of the invention.For example, show such as Figure 13
Diode DVF3 in Fig. 4 A is along the chip profile figure of the another kind of embodiment of line SD-SD foundation.Figure 13 and Fig. 6, for succinct
Reason, mutually the same or similar part is not repeated.Different from Fig. 6, press from both sides between sheet metal 104e and the cap rock 100 in Figure 13
Having an insulating barrier 103, its material is for example silicon oxide.The existence of insulating barrier 103 can also strengthen the breakdown voltage of diode
Tolerance.
Figure 14 shows the flow chart for making the diode in Figure 13.Step 140 is initially formed platform area.For example,
First on cushion 94, form channel layer 96, at high price interband gap layer 98 and cap rock 100 respectively.Then with vicarious coupled plasma
The modes such as etching pattern these three layers and complete platform area 95.Step 142 forms Ohmic contact.For example, respectively titanium deposition/
Metal level 102, as metal level 102, is patterned by aluminum/titanium/gold afterwards, forms sheet metal 102a, 102b etc..Step 144 is formed
Insulating barrier 103.For example, first depositing a silicon dioxide layer, then patterned, remaining silicon dioxide layer becomes as absolutely
Edge layer 103.Step 146 forms Schottky contacts and patterning.For example, the first deposited in sequential ni au/platinum conduct of step 146
Metal level 104, then forms sheet metal 104a, 104b, 104c etc. to metal level 104 patterning.Metal level 104 and metal level
It is Ohmic contact between 102, but is then Schottky contacts between metal level 104 and platform area 95.Step 148 forms protective layer
105, and to patterning, to form weld pad perforate.Certainly, the flow chart of Figure 14 is also applied for making the HEMT in Figure 12.And
By suitable adjustment, the flow chart in Figure 14, it is also possible to be used for the diode in making such as Fig. 4 A and HEMT, such as omit step
Rapid 144, or add other processes.
Although HEMT T1 Yu T2 in Fig. 2 Yu Fig. 5 can be considered as constant current source, but it is not likely to be one completely
Preferably current source.The drain-source current (IDS) of HEMT T1 Yu T2, when saturation region, may still have with drain-source voltage (VDS)
A little relevant.Figure 15 shows that in metal oxide semiconductcor field effect transistor (MOSFET) and HEMT, IDS is to VDS relation.Bent
Line 150 and 152 is respectively directed to the metal oxide semiconductcor field effect transistor (MOSFET) with silicon as base material and a HEMT.
From curve 150 it is found that metal oxide semiconductcor field effect transistor, IDS Yu VDS is about positive correlation, the most just
Being that VDS is the biggest, IDS is the biggest.But HEMT is the most different.From curve 152 it is found that among HEMT, when VDS is more than a particular value
Time, the relation of IDS Yu VDS, negative correlation can be become from positive correlation.And this particular value can be added by the parameter in process
To set.The characteristic of this HEMT has a special benefit, and as VDS because line voltage is unstable during unexpected hurricane height, IDS is on the contrary
Declining, may can reducing the electrical power being consumed in HEMT, so avoiding HEMT to be burned out.
In the most several embodiments, LED driver has a valley fill circuit, but the present invention is not limited to this.Figure 16 shows
Another LED driver 500, in order to drive LED 518, it comprises several LED segment 5201,5202,5203 and is serially connected.
LED driver 500 does not has valley fill circuit.Bridge rectifier 502 in LED driver 500 can with current driving circuit 504
To be integrated together on semiconductor chip, it is packaged into an integrated circuit.Figure 17 shows the metal on semiconductor chip 550
The pattern of layer 104, and indicate diode in Figure 16 and the HEMT relative position on semiconductor chip 550.Semiconductor chip
550 incorporate the bridge rectifier 502 in LED driver 500 and current driving circuit 504.Figure 18 shows semiconductor chip
An integrated circuit 552 after 550 encapsulation.Figure 19 shows that the integrated circuit 552 in employing Figure 18 realizes the one of LED driver 500
Illuminator 560.Figure 16 to 19 can be understood by previous teaching, therefore its details is tired at this states.Can send out from Figure 19
Existing whole illuminator 560 have employed very small amount of electronic component (an electric capacity CF, integrated circuit 552 and LED 518).Illumination
System 560 cost will be minimized, and whole product is the most more simplified.
Figure 16 and 19 is not used for limiting the application of integrated circuit 552.Figure 20 illustrates a LED driver 600, may be used to
The bright Another Application comprising bridge rectifier 502 and the integrated circuit of current driving circuit 504.In fig. 20, electric current drives electricity
HMET T1 Yu T2 in road 504 can be optionally used for driving LED 518, it comprises several LED segment 5201,5202,
5203.LED driver 600 separately has segment circuit IC1 and IC2, and it can become short according to the height of DC source VDC-IN
Road or open circuit.For example, when DC source VDC-IN is more slightly higher than the forward voltage of LED segment 5203, segment circuit IC1 with
IC2 is short circuit current, so LED segment 5203 is luminous, and LED segment 5201,5202 is the most luminous；When DC source VDC-IN increases
To when exceeding the forward voltage summation of LED segment 5202 and 5203, segment circuit IC1 is short circuit current, and segment circuit IC2 is open circuit
Circuit, so LED segment 5202 and 5203 is luminous, and LED segment 5201 is the most luminous；When DC source VDC-IN is further added by exceeding
During the forward voltage summation of LED segment 5201,5202 and 5203, segment circuit IC1 the most and then becomes open-circuit, so LED segment
5201,5202 is the most luminous with 5203.The electro-optical efficiency making LED driver 600 is more preferable, power factor and total harmonic distortion
Rate can obtain good control.
The integrated circuit implemented according to the present invention is not limited to simply incorporate a bridge rectifier and an electric current drives
Galvanic electricity road.Previously described integrated circuit 130 and 552 is as just example.For example, the collection implemented according to the present invention
Become circuit in addition to having bridge rectifier and current driving circuit, also integrate and have some diodes or HEMT, can be used for Figure 20
In segment circuit IC1 Yu IC2 in.
The integrated circuit that the present invention is implemented is not only limited in the HEMT of depletion type.In certain embodiments, integrated circuit
Including enhancement mode (enhancement-mode) HEMT, its conducting electric current can be controlled by providing suitable gate voltage
System, thus changes the light intensity that the LED segment driven is sent.Utilize segment circuit IC1 with IC2 to adjust the most in fig. 20 to open
While dynamic LED segment 5201,5202,5203, the gate voltage that can adjust enhancement mode HEMT is input to LED segment to change HEMT
5201, the electric current of 5202,5203, and then change the light intensity that LED segment 5201,5202,5203 is sent.
Although the most disclosed LED driver or illuminator, it is each to drive single LED 518, but
The present invention is not limited to this.In certain embodiments, can there be two or above LED, with different electric currents, be driven respectively
Dynamic.Figure 21 illustrates a LED driver 700, wherein HEMT T1 and T2 in current driving circuit 504, drives LED 18R respectively
With 18B.For example, what HEMT T1 was provided drives electric current to be less than the driving electric current that HEMT T2 is provided, and LED 18R is big
Causing is red-light LED, and LED 18B substantially blue-ray LED.
Diode in Fig. 6 Yu Figure 13, is formed in respectively on single platform area 95, but the present invention is not limited to this.Figure
In the 22 another kind of embodiments of display, the chip profile figure of a diode.In Figure 22 mutually the same with Fig. 6 and Figure 13 or similar
Part, for succinct reason, is not repeated.Figure 22 has two platform area 95 and 95a.Sheet metal 102e on the 95a of platform area,
Form an Ohmic contact；Sheet metal 102d is then on platform area 95, forms another Ohmic contact.Sheet metal 102d and 102e
By sheet metal 104g, it is electrically short-circuited to each other electrical connection.Sheet metal 104f is as an anode of diode, and sheet metal 104d is then as two
One negative electrode of pole pipe.Structure in Figure 22, can strengthen the breakdown voltage tolerance of diode.
The current driving circuit 66,302 and 504 previously instructed, is all used for driven for emitting lights diode (LED), but this
Bright it is not limited to this.Figure 23 shows the LED driver 800 according to another embodiment of the present invention, and it is similar to Figure 16, each other
Something in common, is referred to previous explanation and understands, for succinct reason, no longer illustrate.LED driver 500 with Figure 16
Difference, the TRIAC dimmer (TRIAC dimmer) 802 of the LED driver more than 800 in Figure 23, and also electric current drives
HEMT T1 in circuit 804 is directly connected between direct current supply line VDD and earth lead GND, does not drive any LED.When one
TRIAC dimmer is closed, when about presenting open circuit, it is desirable to have a certain amount of maintenance electric current (holding current),
Misoperation just can be avoided to occur.In fig 23, HEMT T1 can provide the maintenance required for TRIAC dimmer 802
Electric current.For in design, HEMT T2 can provide relative big electric current, makes LED 518 luminous；And HEMT T1 can provide phase
To small area analysis, when LED 518 is the most luminous, as the maintenance electric current required for TRIAC dimmer 802.
Diode in preceding embodiment is all to represent with the Diode symbol 120 in Fig. 6, and it is by a HEMT and Xiao
The diode that special based diode is composited.But the present invention is not limited to this.Diode in all embodiments, Ke Yiquan
Portion or partial replacement become other kind of diode.For example, Figure 24 shows a bridge rectifier 806, and it is with four Xiao Te
Based diode SBD1, SBD2, SBD3, SBD4 are constituted.
The pattern of the metal level 104 that Figure 25 illustrates on display semiconductor chip 808 and platform area 95, it can realize figure
Bridge rectifier 806 in 24.Figure 26 A, 26B and 26C display semiconductor chip 808 is along line CSV1-CSV1, CSV2-CSV2
Chip profile figure with CSV3-CSV3.For example, the Schottky diode SBD1 in Figure 24 is connected to AC power cord AC1
And between earth lead GND.In Figure 25 Yu Figure 26 A, display has finger more than (multi-finger structure)
HEMT.The grid end of HEMT is as the anode of Schottky diode SBD1, and the tunnel ends of HEMT is as Schottky diode SBD1's
Negative electrode.In equivalence, Schottky diode SBD1 is made up of many little Schottky diode parallel connections.The HEMT of many fingers
Can be in limited chip area, it is provided that bigger driving electric current.
In embodiment previously, each diode, it is also possible to implement with multiple Diode series, such as Figure 27 institute
Citing.Figure 27 shows another bridge rectifier 810.For example, bridge rectifier 810 AC power cord AC1 with
Between earth lead GND, there is the Schottky diode of two concatenations.Figure 28 illustrate display semiconductor chip 812 on metal
Layer 104 and the pattern of platform area 95, it can realize the bridge rectifier 810 in Figure 27.Figure 26 A, 26B can also use with 26C
To show the semiconductor chip 812 chip profile figure along line CSV1-CSV1, CSV2-CSV2 Yu CSV3-CSV3.
As described above, in the semiconductor chip of embodiments of the invention, however it is not limited to can only have depletion type
HEMT and Schottky diode, it is also possible to include the HEMT of enhancement mode (enhancement mode, E-mode).Figure 29 A shows
Show the enhancement mode HEMT ME on semiconductor chip and the HEMT MD of a depletion type, both metal levels 104 and platform
The pattern in district 95.Figure 29 B then shows the electrical connection in Figure 29 A between HEMT MD and ME.Figure 30 then shows in Figure 29 A, along line
The chip profile figure of CSV4-CSV4.As shown in Figure 30, left one side of something is an enhancement mode HEMT ME, wherein as the gold of grid G E
Belong to and accompany an insulating barrier 103 between sheet 104h and cap rock 100.Cap rock 100 and high price interband gap layer 98 are below sheet metal 104h
Part, be formed with an adjustment district 170.For example, adjust district 170 and fluorion can be injected cap rock 100 partly with high
Valence band clearance layer 98 and formed.Enhancement mode HEMT ME compared to left one side of something of depletion type HEMT MD, Figure 30 of Figure 22 left side
Many adjustment district 170 and insulating barriers 103, both can be used to adjust or increase the critical voltage value Vt of a HEMT
(threshold voltage)。
As shown in Figure 29 A, 29B and 30, grid G D of depletion type HEMT MD, by the electric connection of metal level 104,
It is shorted to the end points S of enhancement mode HEMT ME.
Circuit in Figure 29 B, when HEMT ME closes (open circuit), together with HEMT ME and HEMT MD, can undertake dispersion
Cross-pressure from end points D to end points S, it is possible to have goodish voltage endurance capability.When HEMT ME opens (conducting),
HEMT MD can limit the maximum current flow between end points D to end points S as a constant current source.
Enhancement mode HEMT in Figure 29 A Yu 29B can also be as the active switch in semiconductor chip.Figure 31 shows and depends on
According to the circuit design of a LED driver 840 of one embodiment of the invention, it has enhancement mode HEMT and depletion type HEMT.Except
Outside some Schottky diodes are with resistance, LED driver 840 also includes current switch CC1, CC2, CC3, and depletion type
HEMT T8, electric connection each other is as shown in figure 31.On semiconductor chip, current switch CC1, CC2, CC3 can be to scheme
Component structure in 29A with Figure 30 and realize.In one embodiment, current switch CC1, CC2, CC3 and depletion type HEMT
T8, the maximum current that can turn on, is current value I1, I2, I3 and I4 respectively, and I1 < I2 < I3 < I4.Each current switch CC1,
CC2, CC3 have one to control end (the namely grid end of enhancement mode HEMT), by a corresponding resistance, jointly connect
To Schottky diode 852, it has the other end and is connected to earth lead GND.
Figure 32 shows the voltage waveform of the alternating current input power supplying VAC-IN in Figure 31 and flows through bridge rectifier 844
One current waveform.Along with the cross-pressure between direct current supply line VDD to earth lead GND starts to gradually rise from 0V, current switch
CC1, CC2, CC3 can be all turned on.Now, only LED segment 5201 is luminous, and LED segment 5202,5203,5204 is the most luminous, flows through
The driving electric current of LED segment 5201 is limited by current switch CC1, is current value I1 to the maximum.Along with direct current supply line VDD is to ground connection
Cross-pressure between line GND continues to raise, and current switch CC1 closes and LED segment 5202 adds luminescence, now, flows through LED segment 5201
With 5202 driving electric current limited by current switch CC2, be current value I2 to the maximum.As direct current supply line VDD to earth lead GND
Between cross-pressure continue raise after, current switch CC2 close and LED segment 5203 adds luminescence, now, flow through LED segment 5201,
5202, the driving electric current of 5203 is limited by current switch CC3, is current value I3 to the maximum.When direct current supply line VDD is to earth lead
When cross-pressure between GND exceedes to a certain degree, current switch CC1, CC2, CC3 can Close All, LED segment 5201,5202,
5203,5204 is the most luminous.Now, depleted type HEMT of driving electric current of LED segment 5201,5202,5203,5204 is flowed through
T8 is limited, and is current value I4 to the maximum.Cross-pressure between direct current supply line VDD to earth lead GND slowly declines from peak
Time, current switch CC3, CC2, CC1 can open conducting the most gradually.From Figure 32 it is found that the LED driver 840 of Figure 31 not
Simply there is good power factor (power factor), and have at a fairly low rate of total harmonics (total
Harmonic distortion, THD).
In Figure 31, corresponding each current switch CC3, CC2, CC1, there is the Schottky diode of two reverse concatenations,
It is connected between a control end and a high-pressure side of each current switch.And in another embodiment, these Schottky two poles
Pipe (in Figure 31 A a total of 6) can omit and not do, and reduces cost.
The Schottky diode 852 being connected between resistance 850 and earth lead GND, can be used to current limit switch
The ceiling voltage controlling end of CC3, CC2, CC1.When surging high pressure occurs on direct current supply line VDD, Schottky diode
852 are possible to prevent enhancement mode HEMT to cause because of too high gate voltage damaging.
In LED driver 840 in Figure 31, all of Schottky diode and HEMT, one can be integrated in nitrogen
Change the monolithic integrated microwave circuit that gallium is conductive channel material (GaN-based).For example, Schottky diode can be with figure
Component structure in 6 or Figure 26 A realizes, and enhancement mode HEMT can be respectively with the left side in Figure 30 with depletion type HEMT
Realize with the component structure of right-hand part.In other words, it is achieved during LED driver 840, an integrated electricity of monolithic microwave may be had only to
Road, some resistive elements, a LED 848 and a printed circuit board (PCB) (printed circuit board, PCB), cost
The cheapest.
Along with the rising of ambient temperature, with a LED of constant current driven, its luminosity may weaken.In order to more
Mend the brightness decay that high temperature is caused, so in some embodiments of the invention, positive temperature coefficient or negative temperature can be used
The critesistor of coefficient, adjusts the driving electric current to LED.
Figure 33 shows a LED driver 900 of a critesistor with positive temperature coefficient, wherein, critesistor 902
Two ends, a grid end of the enhancement mode HEMT ME1 being connected respectively in current switch CC4 and a tunnel ends.Depletion type HEMT
T5, as a constant current source, about provides a constant current to flow through semistor 902, enhancement mode HEMT ME1
Work in linear zone.When ambient temperature increases, the resistance of critesistor 902 rises, therefore, and the control gate of current switch CC4
Voltage also uprise, add the electric current flowing through LED 518.So, the luminous quantity of LED 518 can be made, the most not along with temperature
Degree changes and changes.
Figure 34 shows a LED driver 906 of a critesistor with negative temperature coefficient, wherein, depletion type HEMT
T6 can be as a constant current source, and its constant current provided substantially is determined by its source voltage.When ambient temperature increases
Time, the resistance of critesistor 906 declines, therefore, the source voltage step-down of depletion type HEMT T6, the grid pair of depletion type HEMT T6
Source (gate to source) voltage increases, and therefore adds the electric current flowing through LED 518.So, sending out of LED 518 can be made
Light quantity, does not changes along with variations in temperature.
The LED driver implemented according to the present invention, however it is not limited to can only have a LED or can only have a temperature-sensitive electricity
Resistance.Figure 35 shows LED driver 910, and it has LED 5181,5182 and 5183.Similar Figure 33 is instructed, and flows through LED
The driving electric current of 5181, is controlled by critesistor 902, increases along with temperature and increases.Similar Figure 34 is instructed, and flows through LED
The driving electric current of 5182, is controlled by critesistor 906, increases along with temperature and increases.And flow through the driving electric current of LED 5183,
Controlled by depletion type HEMT T7, do not changed with temperature.In one embodiment, LED 5183 is a blue-ray LED, and
LED 5181 or 5182 is a red-light LED.
The foregoing is only presently preferred embodiments of the present invention, all equivalent variations done according to scope with repair
Decorations, all should belong to the covering scope of the present invention.
Claims (10)
1. a driver, in order to drive a light-emitting component, includes:
One rectification circuit, comprises a commutation diode, in order to receive an alternating current input power supplying and to produce a DC source, across one
Between direct current supply line and an earth lead；And
One current driving circuit, comprises a constant current source, and wherein this constant current source is in order to be serially connected with this with this light-emitting component
Between direct current supply line and this earth lead, this constant current source can provide one first constant current, drives this light-emitting component；
Wherein, this commutation diode and this constant current source, it is collectively forming on a single semiconductor chip.
2. driver as claimed in claim 1, wherein, this commutation diode comprises a Schottky diode and a high electronics
Mobility field-effect transistor.
3. driver as claimed in claim 1, wherein, this commutation diode includes the HEMT of finger more than.
4. driver as claimed in claim 1, also comprise a TRIAC dimmer be coupled in this alternating current input power supplying with
Between this commutation diode, and one second constant current source is connected directly to this direct current supply line and this earth lead, in order to carry
A maintenance electric current for this TRIAC dimmer.
5. driver as claimed in claim 1, also includes a power factor corrector, correct the power of this driver because of
Counting, it includes multiple diode, is inversely series between this direct current supply line and this earth lead, wherein, and these diode shapes
Become on this single semiconductor chip.
6. driver as claimed in claim 1, also includes a critesistor, is used for controlling this constant current source, makes driving
One driving electric current of this light-emitting component, raises with ambient temperature and increases.
7. driver as claimed in claim 6, wherein, this critesistor is a semistor, this constant electricity
Stream source includes a depletion type high electron mobility transistor and an enhancement type high electron mobility field-effect transistor, should
Enhancement type high electron mobility field-effect transistor includes a grid and two tunnel ends, this two tunnel ends one of them with should
Between grid end, it is coupled with this critesistor.
8. driver as claimed in claim 7, wherein, it is exhausted that this enhancement type high electron mobility field-effect transistor includes grid
Edge layer, in order to completely cut off this grid and this two tunnel ends, is formed with an adjustment district, in order to adjust this enhancement mode under this gate insulation layer
One critical voltage of high electron mobility transistor.
9. driver as claimed in claim 1, wherein, also comprises one second constant current source, it is provided that maximum current value with
The maximum current value that this first constant current source provides differs.
10. driver as claimed in claim 1, wherein, this commutation diode includes a Schottky diode, and it is with a consumption
Type high electron mobility transistor to the greatest extent is constituted, and this depletion type high electron mobility transistor has one first metal
Sheet and one second sheet metal, respectively as a grid and a passage pole of this depletion type high electron mobility transistor,
This first sheet metal is electrically connected to this first sheet metal by two metal arms, and this first sheet metal, this second sheet metal with
And these metal arms are by same metal layer patterning and formed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010101983.3A CN111629487B (en) | 2015-03-02 | 2016-02-18 | Driver of light emitting diode and related lighting system |
Applications Claiming Priority (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW104106489 | 2015-03-02 | ||
| TW104106489 | 2015-03-02 | ||
| TW104109847A TWI663893B (en) | 2015-03-02 | 2015-03-26 | Led driver and illumination system related to the same |
| TW104109847 | 2015-03-26 | ||
| CN201510698676 | 2015-10-23 | ||
| CN2015106986767 | 2015-10-23 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010101983.3A Division CN111629487B (en) | 2015-03-02 | 2016-02-18 | Driver of light emitting diode and related lighting system |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105939549A true CN105939549A (en) | 2016-09-14 |
| CN105939549B CN105939549B (en) | 2020-03-17 |
Family
ID=57153051
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010101983.3A Active CN111629487B (en) | 2015-03-02 | 2016-02-18 | Driver of light emitting diode and related lighting system |
| CN201610090841.5A Active CN105939549B (en) | 2015-03-02 | 2016-02-18 | Driver of light emitting diode and related lighting system |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010101983.3A Active CN111629487B (en) | 2015-03-02 | 2016-02-18 | Driver of light emitting diode and related lighting system |
Country Status (1)
| Country | Link |
|---|---|
| CN (2) | CN111629487B (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108649048A (en) * | 2018-07-10 | 2018-10-12 | 南方科技大学 | A kind of single-slice integrated semiconductor device and preparation method thereof |
| CN108696959A (en) * | 2017-04-10 | 2018-10-23 | 晶元光电股份有限公司 | The driver of light emitting diode |
| CN114420028A (en) * | 2022-01-20 | 2022-04-29 | 京东方科技集团股份有限公司 | Display panel and display device |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201766755U (en) * | 2010-09-10 | 2011-03-16 | 无锡市爱芯科微电子有限公司 | Constant current driving power supply of LED |
| KR20110126428A (en) * | 2010-05-17 | 2011-11-23 | 엘지이노텍 주식회사 | Light emitting device |
| CN102740561A (en) * | 2012-06-04 | 2012-10-17 | 杭州展顺科技有限公司 | LED (Light Emitting Diode) driving circuit |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100345039B1 (en) * | 1999-12-13 | 2002-07-24 | 한국에너지기술연구원 | Power Supply For the Constant Luminescence of Light Emitting Diode Traffic Signal Lamp |
| JP5105784B2 (en) * | 2005-07-06 | 2012-12-26 | 株式会社半導体エネルギー研究所 | LIGHT EMITTING ELEMENT, LIGHT EMITTING DEVICE, AND ELECTRONIC DEVICE |
| JP2007335677A (en) * | 2006-06-15 | 2007-12-27 | Furukawa Electric Co Ltd:The | Normally-off field-effect transistor using group iii nitride semiconductor and its manufacturing method |
| US9071130B2 (en) * | 2010-06-28 | 2015-06-30 | Toshiba Lighting & Technology Corporation | Switching power supply device, switching power supply circuit, and electrical equipment |
| CN101888730B (en) * | 2010-06-30 | 2013-12-11 | 海洋王照明科技股份有限公司 | Alternating current constant current source LED driving circuit |
| US8760058B2 (en) * | 2012-02-02 | 2014-06-24 | Posco Led Company Ltd. | Heat sink and LED illuminating apparatus comprising the same |
| TWI484626B (en) * | 2012-02-21 | 2015-05-11 | Formosa Epitaxy Inc | Semiconductor light-emitting component and light-emitting device having same |
| CN202679708U (en) * | 2012-03-28 | 2013-01-16 | 厦门康帅电子有限公司 | LED (light emitting diode) driving circuit |
| CN202503745U (en) * | 2012-04-07 | 2012-10-24 | 林耀 | LED work-mode controlling means |
| US9048174B2 (en) * | 2013-01-18 | 2015-06-02 | Taiwan Semiconductor Manufacturing Co., Ltd. | Compound semiconductor device having gallium nitride gate structures |
-
2016
- 2016-02-18 CN CN202010101983.3A patent/CN111629487B/en active Active
- 2016-02-18 CN CN201610090841.5A patent/CN105939549B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20110126428A (en) * | 2010-05-17 | 2011-11-23 | 엘지이노텍 주식회사 | Light emitting device |
| CN201766755U (en) * | 2010-09-10 | 2011-03-16 | 无锡市爱芯科微电子有限公司 | Constant current driving power supply of LED |
| CN102740561A (en) * | 2012-06-04 | 2012-10-17 | 杭州展顺科技有限公司 | LED (Light Emitting Diode) driving circuit |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108696959A (en) * | 2017-04-10 | 2018-10-23 | 晶元光电股份有限公司 | The driver of light emitting diode |
| CN108649048A (en) * | 2018-07-10 | 2018-10-12 | 南方科技大学 | A kind of single-slice integrated semiconductor device and preparation method thereof |
| CN114420028A (en) * | 2022-01-20 | 2022-04-29 | 京东方科技集团股份有限公司 | Display panel and display device |
| CN114420028B (en) * | 2022-01-20 | 2024-04-16 | 京东方科技集团股份有限公司 | Display panel and display device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN111629487A (en) | 2020-09-04 |
| CN105939549B (en) | 2020-03-17 |
| CN111629487B (en) | 2023-02-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR102283708B1 (en) | Led driver and illumination system related to the same | |
| US10306714B2 (en) | Semiconductor component and light emitting device using same | |
| TWI726085B (en) | Led driver | |
| US20130026931A1 (en) | Led luminescence apparatus and method of driving the same | |
| US9006984B2 (en) | LED lighting device | |
| TWI663893B (en) | Led driver and illumination system related to the same | |
| CN104470048A (en) | Power Supply Device and Luminaire | |
| CN105939549A (en) | Driver of light emitting diode and related lighting system | |
| CN103023332A (en) | Switching power supply and luminaire | |
| CN103313462B (en) | Power supply for lighting and luminaire | |
| TWI678944B (en) | Led driver and illumination system related to the same | |
| TWI678946B (en) | Led driver and illumination system related to the same | |
| US10791601B2 (en) | Light-emitting device | |
| US10440785B2 (en) | Current holding circuit for bidirectional triode thyristor dimmer and linear dimming driving circuit using the same | |
| CN103108439A (en) | Lighting Power Source and Luminaire | |
| CN108702828B (en) | Solid state lighting assembly | |
| CN211792144U (en) | Constant current controller packaging device and constant current source load driving device | |
| US20170295617A1 (en) | Light-emitting diode (led) driving device and led lighting device containing the same | |
| USRE48798E1 (en) | LED driver and illumination system related to the same | |
| TWI729540B (en) | Led driver and illumination system related to the same | |
| CN108696959B (en) | Driver of light emitting diode | |
| CN111343756A (en) | Constant current controller packaging device and driving device | |
| KR20110113833A (en) | Multi-chip led package driven by individual power sources |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |