CN105938817A - Hollow electronic device sealing sheet and manufacturing method of the same - Google Patents
Hollow electronic device sealing sheet and manufacturing method of the same Download PDFInfo
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- CN105938817A CN105938817A CN201610118460.3A CN201610118460A CN105938817A CN 105938817 A CN105938817 A CN 105938817A CN 201610118460 A CN201610118460 A CN 201610118460A CN 105938817 A CN105938817 A CN 105938817A
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- Prior art keywords
- sheet
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- sealing
- hollow
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Abstract
This invention provides a hollow electronic device sealing sheet which can restrain uneven amount of resin in each package piece which enters from the hollow portion between an electronic device and an adherend. According to the invention, the input amount X1 sequentially measured according to the following steps is greater than 0 [mu]m and less than 50 [mu]m, and the value subtracted by X1 from an input amount Y1 is less than 50 [mu]m. The steps includes a step of embedding an analog chip into a hollow electronic device sealing sheet sample, a step of measuring the input amount X1 of sample resin entering the hollow portion between the analog chip and a glass substrate, a step of thermocuring the sample to obtain a sealing sample and a step of measuring the input amount Y1 of the resin entering the hollow portion in the sealing sample.
Description
Technical field
The present invention relates to hollow type electronic component encapsulation sheet and the system of hollow type electron device package part
Make method.
Background technology
In the past, the hollow type electronic device resin of hollow structure will become between electronic device and substrate
When sealing and make hollow type electron device package part, sometimes use the resin of lamellar as sealing resin
(for example, referring to patent documentation 1).
Prior art literature
Patent documentation
Patent documentation 1: Japanese Unexamined Patent Publication 2006-19714 publication
Summary of the invention
The problem that invention is to be solved
As the manufacture method of described packaging part, following method can be enumerated: be configured on adherend
The sealing resin of lamellar is configured, then, to making electronic device and lamellar on one or more electronic devices
Sealing resin close direction pressurization and electronic device is imbedded the sealing resin of lamellar, afterwards, make
The method of the sealing resin heat cure of lamellar.
When adopting with the aforedescribed process, being partly between electronic device and adherend of sealing resin
Hollow bulb.But, exist its inlet not all in accordance with the problem that different packaging parts is bigger.
The present invention implements in view of above-mentioned problem, its object is to, it is provided that a kind of hollow type electronic device
Sheet for sealing, it can suppress the amount of resin that the hollow bulb between electronic device and adherend enters often
Inequality in individual packaging part.
It addition, also reside in the manufacture method providing a kind of hollow type electron device package part, it can suppress
To amount inequality in each packaging part of the resin that the hollow bulb between electronic device and adherend enters.
The method solving problem
In order to reach purpose as above, the present inventor is first to entering the amount of resin of hollow bulb according to not
The reason of same packaging part inequality conducts in-depth research.Its result, finds out when adopting with the aforedescribed process,
After electronic device is imbedded sealing resin, resin does not enters into the hollow between electronic device and adherend
Portion.Additionally find out, during the heat cure of sealing resin later, first, a part for sealing resin
Becoming low viscosity etc. by heat, flow and enter hollow bulb, afterwards, resin becomes along with heat cure
For high viscosity, the entrance of resin stops.And find out, the amount of flow of resin during heat cure is not according to
With packaging part and significantly different, it is difficult to control.
Present inventors etc. find, by using following composition, to solve described problem, from
And complete the present invention.
That is, the hollow type electronic component encapsulation sheet of the present invention is characterised by,
It is more than 0 μm and 50 μm by inlet X1 of following step A～the sequential determination of step G
Below and being deducted the value after described inlet X1 by inlet Y1 is below 60 μm.
Step A, prepares to utilize resin projection to be installed on glass base 1 analog chip of following specification
The analog chip installation base plate of plate,
Step B, prepares the hollow type electronic device of the size of long 1cm, wide 1cm, thick 220 μm
The sample of sheet for sealing,
Step C, is arranged in the described analog chip of described analog chip installation base plate by described sample
Upper,
Step D, under the conditions of following embedment, by described analog chip imbed described sample,
Step E, after described step D, measures and constitutes the resin of described sample to described simulation core
Inlet X1 of the hollow bulb between sheet and described glass substrate,
Step F, after described step E, places 1 hour in the air drier of 150 DEG C, makes
Described sample heat cure and obtain seal sample and
Step G, measures the inlet of the described resin described hollow bulb in described seal sample
Y1。
<specification of analog chip>
Chip size is long 3mm, wide 3mm, thick 200 μm, and the resin being formed with high 50 μm is convex
Block.
<embedment condition>
Drawing method: flat board is suppressed
Temperature: 75 DEG C
Plus-pressure: 3000kPa
Vacuum: 1.6kPa
Press time: 1 minute
According to described composition, owing to described inlet X1 is below more than 0 μm and 50 μm, therefore
In the manufacture of actual hollow type electron device package part, electronic device is being imbedded hollow type electronics
During device sealing sheet, resin appropriateness can be made to enter the hollow bulb between electronic device and adherend.
Further, since by described inlet Y1 deduct the value after described inlet X1 be 60 μm with
Under, therefore in the manufacture of actual hollow type electron device package part, can suppress to make hollow type electricity
The flowing of the resin in hollow bulb during sub-device sealing sheet heat cure.
Like this, according to described composition, in the manufacture of actual hollow type electron device package part,
Resin can be made hollow bulb and can is entered when being easily controlled resin to the embedment of the inlet of hollow bulb
Amount of movement with resin during the unmanageable heat cure of suppression.It is as a result, it is possible to suppression enters hollow
The amount of the resin in portion is uneven in each packaging part.
In described composition, if the viscosity of 90 DEG C is more than 300kPa s is higher viscosity, then may be used
Softened by heat during heat cure with suppression, flow in hollow bulb.
It addition, the manufacture method of the hollow type electron device package part of the present invention is characterised by including:
Prepare to utilize the duplexer that electronic device is fixed on adherend by projection operation,
Prepare hollow type electronic component encapsulation sheet operation,
Described hollow type electronic component encapsulation sheet is arranged in the described electronic device of described duplexer
On operation,
By hot pressing, described electronic device is imbedded the work of described hollow type electronic component encapsulation sheet
Sequence and
After described embedment operation, described hollow type electronic component encapsulation sheet heat cure is made to obtain close
The operation of envelope body,
By the composition institute after described embedment operation and when obtaining the state before the operation of described seal
State the resin of hollow type electronic component encapsulation sheet between described electronic device and described adherend
The inlet of hollow bulb is set to X2, described tree when will obtain the state after the operation of described seal
Fat is when the inlet of described hollow bulb is set to Y2, and described inlet X is more than 0 μm and 50 μm
Below and being deducted the value after described inlet X2 by described inlet Y2 is below 60 μm
According to described composition, described inlet X2 is below more than 0 μm and 50 μm, by electronics device
During part embedment hollow type electronic component encapsulation sheet, make resin appropriateness enter electronic device and adherend it
Between hollow bulb.
It addition, being deducted the value after described inlet X by described inlet Y is below 60 μm, press down
Make the flowing of resin in hollow bulb when making hollow type electronic component encapsulation sheet heat cure.
Like this, according to described composition, when being easily controlled resin to the embedment of the inlet of hollow bulb
The amount of movement of resin when making resin enter hollow bulb and inhibit unmanageable heat cure.Its knot
Really, the amount entering the resin of hollow bulb can be suppressed uneven in each packaging part.
Accompanying drawing explanation
Fig. 1 is the schematic cross-section of the hollow type electronic component encapsulation sheet of present embodiment.
Fig. 2 is the schematic cross-section for illustrating to measure the order of inlet X1 and inlet Y1.
Fig. 3 is the schematic cross-section for illustrating to measure the order of inlet X1 and inlet Y1.
Fig. 4 is the schematic cross-section for illustrating to measure the order of inlet X1 and inlet Y1.
Fig. 5 is the schematic cross-section for illustrating to measure the order of inlet X1 and inlet Y1.
Fig. 6 is the partial enlarged drawing of Fig. 5.
Fig. 7 is the manufacture method of the hollow type electron device package part for present embodiment is described
Schematic cross-section.
Fig. 8 is the manufacture method of the hollow type electron device package part for present embodiment is described
Schematic cross-section.
Fig. 9 is the manufacture method of the hollow type electron device package part for present embodiment is described
Schematic cross-section.
Figure 10 is the manufacture method of the hollow type electron device package part for present embodiment is described
Schematic cross-section.
Figure 11 is the manufacture method of the hollow type electron device package part for present embodiment is described
Schematic cross-section.
Detailed description of the invention
Hereinafter, embodiments of the present invention limit is illustrated on limit referring to the drawings.Wherein, the present invention is not
It is only limitted to these embodiments.
(hollow type electronic component encapsulation sheet)
Fig. 1 is the schematic cross-section of the hollow type electronic component encapsulation sheet of present embodiment.Such as Fig. 1
Shown in, hollow type electronic component encapsulation is representative with sheet 11 (hereinafter also referred to as " sheet for sealing 11 ")
Ground provides with the state being laminated on the partition 11a such as polyethylene terephthalate (PET) film.
Additionally, for the stripping easily carrying out sheet for sealing 11, partition 11a can be implemented the demoulding and process.
Additionally, in present embodiment, an only surface layer at hollow type electronic component encapsulation sheet is folded
The situation of partition illustrates, but the invention is not restricted to this example, it is also possible to close at hollow type electronic device
The two sides stacking partition of envelope sheet.At this point it is possible to use to peel off a partition before using.Separately
Outward, in the present invention, hollow type electronic component encapsulation sheet can not be laminated in partition and with hollow type electricity
The monomer of sub-device sealing sheet provides.It addition, in the range of the purport not violating the present invention, also
Can on hollow type electronic component encapsulation sheet other layers of stacking.
(hollow type electronic component encapsulation sheet)
Sheet for sealing 11 is 0 μm by inlet X1 of following step A～the sequential determination of step G
Above and below 50 μm and being deducted the value after inlet X1 (Y1-X1) by inlet Y1 is 60 μm
Below.
Described inlet X1 is preferably below more than 0 μm and 20 μm.
It addition, described (Y1-X1) is preferably below 30 μm, below more preferably 10 μm.
Step A, prepares to utilize resin projection to be installed on glass base 1 analog chip of following specification
The analog chip installation base plate of plate,
Step B, prepares the hollow type electronic device of the size of long 1cm, wide 1cm, thick 220 μm
The sample of sheet for sealing,
Step C, is arranged in the described analog chip of described analog chip installation base plate by described sample
On,
Step D, under the conditions of following embedment, imbeds described sample by described analog chip,
Step E, after described step D, measures and constitutes the resin of described sample to described simulation core
Inlet X1 of the hollow bulb between sheet and described glass substrate,
Step F, after described step E, places 1 hour in the air drier of 150 DEG C, makes
Described sample heat cure and obtain seal sample and
Step G, measures the inlet of the described resin described hollow bulb in described seal sample
Y1。
<specification of analog chip>
Chip size is long 3mm, wide 3mm, thick 200 μm, and the resin being formed with high 50 μm is convex
Block.
<embedment condition>
Drawing method: flat board is suppressed
Temperature: 75 DEG C
Plus-pressure: 3000kPa
Vacuum: 1.6kPa
Press time: 1 minute
Hereinafter, to obtaining inlet X1 and being deducted the side of the value after inlet X1 by inlet Y1
Method illustrates.
Fig. 2～Fig. 5 is the cross section signal for illustrating to measure the order of inlet X1 and inlet Y1
Figure.Fig. 6 is the partial enlarged drawing of Fig. 5.
(step A)
In step A, as in figure 2 it is shown, prepare 1 analog chip 113 to utilize resin projection 113a
It is installed on the analog chip installation base plate 115 of glass substrate 112.The specification of analog chip 113 is as follows.
The method that analog chip installation base plate 115 is recorded more particularly through embodiment prepares.
<specification of analog chip 113>
Chip size is long 3mm, wide 3mm, thick 200 μm, and the resin being formed with high 50 μm is convex
Block 113a.
(step B)
In step B, as it is shown on figure 3, prepare the size of long 1cm, wide 1cm, thick 220 μm
Sample 111.Sample 111 uses the material identical with sheet for sealing 11, make long 1cm, width 1cm,
The size of thick 220 μm.In present embodiment, sample 111 is laminated in the situation on partition 111a
Illustrate.Can such as be initially formed long more than 10cm, wide more than 10cm, thick 220 μm
Sheet for sealing 11, afterwards, is cut into long 1cm, wide 1cm, the size of thick 220 μm, thus makes
Sample 111.Additionally, sheet for sealing 11 itself is without for long 1cm, wide 1cm, thick 220 μm
Size.
(step C)
In step C, as shown in Figure 4, sample 111 is arranged in analog chip installation base plate 115
Analog chip 113 on.Such as, in downside heating plate 122, analog chip 113 will be fixed with
The analog chip installation base plate of configuration faceup 115, and configure on analog chip 113 simultaneously
Sample 111.In this step, first can configure analog chip in downside heating plate 122 and base is installed
Plate 115, afterwards, configures sample 111, it is also possible to first at mould on analog chip installation base plate 115
Intend laminated samples 111 on chip mounting substrate 115, afterwards, downside heating plate 122 configures mould
The sandwich that plan chip mounting substrate 115 and sample 111 are laminated.
(step D)
After step C, in step D, as it is shown in figure 5, under the conditions of following embedment, at sample
Product 111 are imbedded analog chip 113.Specifically, under the conditions of following embedment, suppressed by flat board
The downside heating plate 122 and the upside heating plate 124 that are possessed carry out hot pressing, by analog chip 113
Embedment sample 111.Afterwards, place at atmospheric pressure, room temperature (25 DEG C).Standing time is set to 24
Within hour.
<embedment condition>
Drawing method: flat board is suppressed
Temperature: 75 DEG C
Plus-pressure: 3000kPa
Vacuum: 1.6kPa
Press time: 1 minute
(step E)
After step D, in step E, measure and constitute the resin of sample 111 to analog chip 113
And inlet X1 (with reference to Fig. 6) of the hollow bulb 114 between glass substrate 112.Inlet X1
The maximum of resin for entering to hollow bulb 114 from the end of analog chip 113 arrives distance.
(step F)
After described step E, analog chip 113 is imbedded the works of sample 111 at 150 DEG C
Air drier is placed 1 hour, makes sample 111 heat cure obtain seal sample.
(step G)
After described step F, measure described resin hollow bulb 114 in described seal sample
Inlet Y1.Inlet Y1 is to enter from the end of analog chip 113 to hollow bulb 114
The maximum of resin arrives distance.
Afterwards, obtain and deducted the value after inlet X1 by inlet Y1.
More than by, to obtaining inlet X1 and being deducted the value after inlet X1 by inlet Y1
Method illustrate.
Sheet for sealing 11 is as it has been described above, pass through inlet X1 of the sequential determination of step A～step G
It is below more than 0 μm and 50 μm and is deducted the value after described inlet X1 by inlet Y1 and be
Below 60 μm.
Owing to described inlet X1 is below more than 0 μm and 50 μm, therefore at actual hollow type
In the manufacture of electron device package part, when electronic device is imbedded sheet for sealing 11, resin can be made
Appropriateness enters the hollow bulb between electronic device and adherend.
Further, since by described inlet Y1 deduct the value after described inlet X1 be 60 μm with
Under, therefore in the manufacture of actual hollow type electron device package part, can suppress to make sheet for sealing
The flowing of the resin in hollow bulb during 11 heat cure.
Like this, utilize sheet for sealing 11, in the manufacture of actual hollow type electron device package part
In, can make when being easily controlled resin to the embedment of the inlet of hollow bulb resin enter hollow bulb,
And the amount of movement of resin when can suppress unmanageable heat cure.It is as a result, it is possible to suppression enters
The amount of the resin of hollow bulb is uneven in each packaging part.
Additionally, use inlet X1 and deducted the value after described inlet X1 by inlet Y1
Evaluate the physical property of sheet for sealing 11, be to set actual hollow type electron device package part
It is evaluated under conditions of manufacture.Wherein, the hollow that the condition during these are evaluated is sometimes certain with actual
Condition in the manufacture of type electron device package part is different.
It addition, described inlet Y1 is preferably below 110 μm, below more preferably 90 μm.?
In hollow type electron device package part, projection, be formed at electronic device being arranged at distance active more
Inner side more than the μm of hollow bulb direction 110, the end of electronic device.Therefore, if by described entrance
Amount Y1 is set to below 110 μm, then become to send out reliably as hollow type electron device package part
Wave effect.
Viscosity during 90 DEG C of sheet for sealing 11 is preferably more than 300kPa s, more preferably 350kPa
More than s, more preferably more than 400kPa s.If the viscosity of the 90 of sheet for sealing 11 DEG C is
More than 300kPa s and be higher viscosity, then can suppress to be softened by heat during heat cure,
Flow in hollow bulb.
It addition, the viscosity of the 90 of sheet for sealing 11 DEG C is preferably below 600kPa s, more preferably
Below 500kPa s.If the viscosity of the 90 of sheet for sealing 11 DEG C is below 600kPa s, the most permissible
Electronic device is suitably imbedded sheet for sealing 11.Additionally, the viscosity of regulation 90 DEG C is to set
The temperature near lowest melt viscosity is become, if this is because at too high a temperature when heat cure
Be measured, then the heat cure of sheet for sealing 11 starts, thus is worth meeting inequality.
As the method for the control of the viscosity of 90 DEG C of sheet for sealing 11, following method etc. can be enumerated:
Adjust the method for the content etc. of the kind of following thermoplastic resin or content, inorganic filler or pass through
The side that stirring condition when making the varnish for forming sheet for sealing 11 or mixing thing is adjusted
Method.
Sheet for sealing 11 preferably comprises epoxy resin and phenolic resin.Thereby, it is possible to obtain good
Thermocurable.
As epoxy resin, it is not particularly limited.Such as can use: tritan. type epoxy resin,
Cresol novalac type epoxy resin, biphenyl type epoxy resin, modified bisphenol A type epoxy resin,
Bisphenol A type epoxy resin, bisphenol f type epoxy resin, modified bisphenol F type epoxy resin, bicyclo-
The various asphalt mixtures modified by epoxy resin such as pentadiene type epoxy resin, phenol novolac type epoxy resin, phenoxy resin
Fat.These epoxy resin may be used alone, used in two or more.
From the viewpoint of toughness after guaranteeing epoxy resin cure and epoxy resin reactivity, preferably ring
Oxygen equivalent be 150～250, softening point or fusing point be 50～130 DEG C at normal temperatures for the tree of solid
Fat, wherein, from the viewpoint of mouldability and reliability, more preferably bisphenol f type epoxy resin,
Bisphenol A type epoxy resin, biphenyl type epoxy resin.
As long as there is the resin of curing reaction between phenolic resin energy and epoxy resin the most especially
Limit.Such as can use: phenol linear phenolic resin, phenol aralkyl resin, biphenyl aralkyl
Resin, dicyclopentadiene type phenol resin, cresol novalac resin, A-stage resin etc..These phenol
Urea formaldehyde may be used alone, used in two or more.
As phenolic resin, from the reactivity of epoxy resin from the viewpoint of, hydroxyl is preferably used and works as
The resin that amount is 70～250, softening point is 50～110 DEG C, wherein, the high and valency from solidification reactivity
From the viewpoint of lattice are cheap, can suitably use phenol linear phenolic resin.Additionally, from reliability
Viewpoint is set out, it is also possible to be suitably used phenol aralkyl resin, biphenyl aralkyl resin such low
Hygroscopicity phenolic resin.
Epoxy resin and the mixing ratio of phenolic resin, from the viewpoint of solidification reactivity, relative to
Epoxy radicals 1 equivalent in epoxy resin, preferably makes the hydroxyl in phenolic resin add up to 0.7～1.5
Equivalent coordinates, more preferably 0.9～1.2 equivalents.
Epoxy resin and the total content lower limit of phenolic resin in sheet for sealing 11 are preferably 5.0 weights
Amount more than %, more than more preferably 7.0 weight %.More than 5.0 weight %, then can be good
Ground obtains the bonding force to electronic device, substrate etc..On the other hand, the upper limit of described total content is preferred
It is below 25 weight %, below more preferably 20 weight %.Below 25 weight %, then can
Enough reduce the hygroscopicity of sheet for sealing.
Sheet for sealing 11 preferably comprises thermoplastic resin.Thereby, it is possible to the sheet for sealing making to obtain
Thermostability, flexibility, intensity are improved.
As thermoplastic resin, can enumerate: natural rubber, butyl rubber, isoprene rubber,
Neoprene, vinyl-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylate
Copolymer, polybutadiene, polycarbonate resin, thermoplastic polyimide resin, 6-nylon or
The polyamides such as 6,6-nylon, phenoxy resin, acrylic resin, PET or PBT etc. are saturated
Polyester resin, polyamide-imide resin, fluororesin, styreneisobutylene-styrene
Thing etc..These thermoplastic resins can be used alone, or two or more and use.Wherein, from easily
From the viewpoint of obtaining the favorable dispersibility of flexibility and epoxy resin, preferably acrylic resin.
As described acrylic resin, it is not particularly limited, can enumerate with one or more
Acrylic or methacrylic acid the polymer that ester is composition (acrylic acid series copolymer) etc., wherein,
Acrylic or methacrylic acid ester be have carbon number less than 30, particularly carbon number 4～
The ester of the acrylic or methacrylic acid of the straight or branched alkyl of 18.As described alkyl, such as
Can enumerate: methyl, ethyl, propyl group, isopropyl, normal-butyl, the tert-butyl group, isobutyl group, amyl group,
Isopentyl, hexyl, heptyl, cyclohexyl, 2-ethylhexyl, octyl group, iso-octyl, nonyl, different nonyl
Base, decyl, isodecyl, undecyl, lauryl, tridecyl, myristyl, stearyl,
Octadecyl or dodecyl etc..
The glass transition temperature (Tg) of described acrylic resin is preferably less than 50 DEG C, more excellent
Elect-70～20 DEG C as, more preferably-50～0 DEG C.By being set as less than 50 DEG C, can make
Sheet material has flexibility.
Among described acrylic resin, preferable weight-average molecular weight is the resin of more than 50,000, more preferably
It is the resin of 100,000～2,000,000, the more preferably resin of 300,000～1,600,000.If institute
State in numerical range, then can improve viscosity and the flexibility of sheet for sealing 11 further.Need explanation
, weight average molecular weight is to utilize GPC (gel permeation chromatography) method measure and pass through polystyrene
The value converted and obtain.
It addition, as other monomers of the described polymer of formation, be not particularly limited, include, for example:
Acrylic acid, methacrylic acid, carboxy ethyl acrylate, carboxypentyl acrylate, itaconic acid, maleic acid,
Such anhydride such as such carboxyl group-containing monomer such as fumaric acid or .beta.-methylacrylic acid, maleic anhydride or itaconic anhydride
Monomer, (methyl) acrylic acid 2-hydroxy methacrylate, (methyl) acrylic acid 2-hydroxy propyl ester, (first
Base) acrylic acid 4-hydroxybutyl, (methyl) acrylic acid own ester of 6-hydroxyl, (methyl) acrylic acid
8-hydroxyl monooctyl ester, (methyl) acrylic acid 10-hydroxyl ester in the last of the ten Heavenly stems, (methyl) acrylic acid 12-hydroxylauric
Such hydroxyl monomers such as ester or acrylic acid (4-hydroxymethylcyclohexyl) methyl ester, styrene sulfonic acid,
Allyl sulphonic acid, 2-(methyl) acrylamide-2-methyl propane sulfonic, (methyl) acrylamide the third sulphur
Acid, (methyl) acrylic acid sulphur propyl ester or (methyl) propane sulfonic acid etc. are such containing sulfonic acid
Such phosphorous acid-based monomers such as base monomer or 2-hydroxylethyl acyl phosphate.Wherein,
From the viewpoint of reacting with epoxy resin and sheet for sealing 11 viscosity can be improved, preferably comprise and contain
Carboxylic monomer, containing at least one in glycidyl (epoxy radicals) monomer, hydroxyl monomer.
In sheet for sealing 11, the content of thermoplastic resin is preferably more than 0.5 weight %, more preferably
More than 1.0 weight %.If described content is more than 0.5 weight %, then can obtain the soft of sheet for sealing
Soft, flexible.In sheet for sealing 11, the content of thermoplastic resin is preferably below 10 weight %, more
It is preferably below 5 weight %.Below 10 weight %, then sheet for sealing for electronic device,
The cementability of substrate is good.
Sheet for sealing 11 preferably comprises inorganic filler.
Described inorganic filler is not particularly limited, it is possible to use existing known various filleies, example
As enumerated: quartz glass, Talcum, silicon dioxide (fused silica, crystallinity silicon dioxide
Deng), aluminium oxide, aluminium nitride, silicon nitride, the powder of boron nitride.They can be used alone, also
Can be two or more and use.Wherein, from the reason that can reduce linear expansion coefficient well,
Preferably silicon dioxide, aluminium oxide, more preferably silicon dioxide.
As silicon dioxide, preferably SiO 2 powder, more preferably fused silica powder.As
Fused silica powder, can enumerate: spheroidal fused SiO 2 powder, broken melted titanium dioxide
Si powder, from the viewpoint of mobility, preferably spheroidal fused SiO 2 powder.
Sheet for sealing 11 preferably contains inorganic filler in the range of 69～86 volume %.Described contain
Amount more preferably 75 more than volume %, more preferably 78 more than volume %.If 69～86
Containing inorganic filler in the range of volume %, then thermal coefficient of expansion can be made close to SAW chip 13.
It is as a result, it is possible to suppress the warpage of packaging part.Further, if in the range of 69～86 volume %
Containing inorganic filler, then can reduce water absorption rate.
When described inorganic filler is silicon dioxide, the content of described inorganic filler can also be with " weight
Amount % " it is that unit illustrates.In sheet for sealing 11, the content of silicon dioxide is preferably 80～92 weights
Amount %, more preferably 85～92 weight %.
Mean diameter be preferably used at 20 μm following range of inorganic fillers, more preferably use 0.1～
The inorganic filler of 15 μ m, particularly preferably uses the inorganic filler of 0.5～10 μ m.
It addition, as described inorganic filler, it is possible to use the nothing that two or more mean diameters are different
Machine filler.When using the different inorganic filler of two or more mean diameter, described " inorganic fill out
The mean diameter filling agent is below 20 μm " refer to that the overall mean diameter of inorganic filler is 20 μm
Below.
The shape of described inorganic filler is not particularly limited, can be spherical (including spheroid shape),
The arbitrary shapes such as polyhedral, polygon prism shape, flat, indefinite shape, but from realizing hollow structure
From the viewpoint of neighbouring high occupied state, appropriate mobility, the most spherical.
The described inorganic filler contained in sheet for sealing 11 is preferably utilizing laser diffraction and scattering method to survey
Fixed particle size distribution has two peaks.Such as can be by different inorganic of two kinds of mean diameters of mixing
Filler obtains such inorganic filler.If use particle size distribution having the inorganic of two peaks fill out
Fill agent, then high density can fill inorganic filler.It is as a result, it is possible to more improve inorganic filler
Content.
Said two peak is not particularly limited, and the peak of the bigger side of preferable particle size is at the model of 3～30 μm
In enclosing, the peak of the less side of particle diameter is in the range of 0.1～1 μm.If said two peak is described
In numerical range, then can more improve the content of inorganic filler.
Specifically, described particle size distribution can be obtained by the following method.
A sheet for sealing 11 is put into crucible by (), under air atmosphere, and calcination 2 hours at 700 DEG C
Make it be ashed.
B () makes the ash obtained be dispersed in pure water, ultrasonic Treatment 10 minutes, utilizes laser to spread out
Penetrate scattering formula particle size distribution measurement device (Beckman Coulter Inc.'s system, " LS 13 320 "；Wet type
Method) obtain particle size distribution (volume reference).
It should be noted that as the composition of sheet for sealing 11, for having in addition to inorganic filler
Machine composition, processes virtually all organic principle by described calcination and is burned off, therefore incite somebody to action
To ash be considered as inorganic filler and measure.It should be noted that the calculating of mean diameter and grain
Degree distribution can also be carried out simultaneously.
The inorganic filler of sheet for sealing 11 carries out surface process with silane coupler the most in advance.
As described silane coupler, as long as have methacryloxy or acryloxy and energy
Enough carry out the material of inorganic filler surface process, be just not particularly limited.As described silane coupled
The object lesson of agent, can enumerate: 3-methacryloyloxypropyl methyl dimethoxysilane, 3-first
Base acryloxypropyl trimethoxy silane, 3-methacryloyloxypropyl methyl diethoxy silicon
Alkane, 3-methacryloxypropyl, methacryloxy octyl group trimethoxy
Silane, methacryloxy octyltri-ethoxysilane.Wherein, from the reactive and viewpoint of cost
Set out, preferably 3-methacryloxypropyl trimethoxy silane.
When processing the surface of inorganic filler with silane coupler, emergent gas (such as, first can be produced
Alcohol).Therefore, fill out inorganic with silane coupler the most in advance in the last stage making sheet for sealing 11
Fill if agent carries out surface process, so that it may get rid of a certain degree of emergent gas in this stage.Its knot
Really, when making sheet for sealing 11 can the amount of Restraining seal emergent gas in sheet material, permissible
Reduce the generation in space.
Sheet for sealing 11 is containing being had methacryloxy or third as silane coupler in advance
When the compound of alkene acyloxy has carried out the inorganic filler that surface processes, relative to inorganic filler
100 weight portions, described inorganic filler is carried out with the silane coupler of 0.5～2 weight portions the most in advance
Surface processes.
If inorganic filler being carried out surface process with silane coupler, can suppress to seal and using
The viscosity of sheet 11 becomes excessive, if but the amount of silane coupler is many, then the generation amount of emergent gas
Also increase.Therefore, even if inorganic filler to have been carried out in advance surface process, making sheet for sealing
The emergent gas produced when 11 also results in the hydraulic performance decline of sheet for sealing 11.On the other hand, if
The amount of silane coupler is few, and viscosity becomes excessive the most sometimes.Accordingly, with respect to inorganic filler 100
Weight portion, if carrying out surface in advance with the silane coupler of 0.5～2 weight portions to inorganic filler
If process, then while suitably can reducing viscosity, additionally it is possible to the property that suppression emergent gas causes
Can decline.
Sheet for sealing 11 is containing being had methacryloxy or third as silane coupler in advance
The compound of alkene acyloxy carried out surface process inorganic filler and use be mixed with two kinds put down
When all the material of the inorganic filler that particle diameter is different is as described inorganic filler, use the most in advance
Silane coupler carries out surface process to the inorganic filler that mean diameter is less.Mean diameter is less
Inorganic filler specific surface area is bigger, the most more can suppress the rising of viscosity.
It is mixed with the material of two kinds of different inorganic fillers of mean diameter as described nothing it addition, use
During machine filler, the most in advance with silane coupler to the less inorganic filler of mean diameter with relatively
Big both inorganic fillers carry out surface process.In the case, viscosity can more be suppressed further
Rise.
Sheet for sealing 11 preferably comprises curing accelerator.
As curing accelerator, as long as the material that the solidification of epoxy resin and phenolic resin is carried out can be made
Just it is not particularly limited, such as, can enumerate: triphenylphosphine, tetraphenyl tetraphenyl borate salts etc. have
Machine phosphorus series compound；2-phenyl-4,5-bishydroxymethyl imidazoles, 2-phenyl-4-methyl-5-hydroxymethyl
The imidazole compounds such as imidazoles；Deng.Wherein, good from reactivity and solidfied material Tg easily raises
Reason set out, preferably imidazole compound.In imidazole compound, when heat cure can be accelerated
Viscosity rising aspect, preferably 2-phenyl-4-methyl-5-hydroxymethylimidazole.
Relative to total amount 100 weight portion of epoxy resin and phenolic resin, the content of curing accelerator is excellent
Elect 0.1～5 weight portions as.
As required, sheet for sealing 11 can also contain flame retardant constituent.Thereby, it is possible to reduction because of
Parts short circuit, heating etc. and on fire time burning expand.As flame retardant compositions, such as, can use:
Aluminium hydroxide, magnesium hydroxide, hydrated ferric oxide., calcium hydroxide, stannic hydroxide, Composite metal hydrogen-oxygen
The various metal hydroxides such as compound；Phosphonitrile flame retardant etc..
Sheet for sealing 11 preferably comprises pigment.As pigment, it is not particularly limited, can list
White carbon black etc..
In sheet for sealing 11, the content of pigment is preferably 0.1～2 weight %.If 0.1 weight %
Above, then be obtained in that good markup.Below 2 weight %, then it is able to ensure that solidification
The intensity of rear sheet for sealing.
It should be noted that in resin combination, in addition to described each composition, it is also possible to according to
Need suitably to coordinate other additive.
The thickness of sheet for sealing 11 is not particularly limited, for example, 100～2000 μm.If institute
In the range of stating, then can sealed electronic device well.
Sheet for sealing 11 can be single layer structure, it is also possible to be that two or more sheet for sealing is laminated
Multiple structure.
[manufacture method of hollow type electronic component encapsulation sheet]
Sheet for sealing 11 can be formed by following methods: will be used for forming sheet for sealing in appropriate solvent
The resins of 11 etc. dissolve, dispersion, prepare varnish, are coated with this with specific thickness clear on partition 11a
Paint and after forming film, be dried this film under prescribed conditions.Coating process is not particularly limited, example
As enumerated: the coating of roller coat, silk screen, intaglio plate coating etc..Additionally, as drying condition, such as exist
Implement in the range of baking temperature 70～160 DEG C, drying time 1～30 minutes.
It addition, as additive method, after supporting mass is coated with described varnish formation film, it is also possible to
Under described drying condition, dry coating forms sheet for sealing 11.Subsequently, by sheet for sealing 11 with
Hold body to paste together on partition 11a.Particularly sheet for sealing 11 is containing thermoplastic resin (propylene
Acid is resin), epoxy resin, phenolic resin time, after these are all dissolved to solvent, then enter
Row is coated with, is dried.As solvent, butanone, ethyl acetate, toluene etc. can be enumerated.
It addition, sheet for sealing 11 can be manufactured by mixing extrusion.Come as by mixing extrusion
The method manufactured, can enumerate such as: by known with mixing mill, adding pressure type kneader, extruder etc.
Mixing roll each components fuse being used for being formed sheet for sealing 11 is mixing, thus prepare mixing thing,
The mixing thing obtained is carried out plasticising processing and is formed as the method etc. of lamellar.
Specifically, the mixing thing after melting mixing is not cooled down and directly extrude at high operating temperatures
Shape, thus can form sheet for sealing.As such extrusion method, it is not particularly limited, can
Enumerate T extrusion, rolling preparation method, the mixing method of roller, coetrusion, calendaring molding method etc..
As extrusion temperature, more than the softening point of preferably described each composition, if considering the thermosetting of epoxy resin
The property changed and formability, the most for example, 40～150 DEG C, preferably 50～140 DEG C, more preferably
70～120 DEG C.More than by, sheet for sealing 11 can be formed.
[manufacture method of hollow type electron device package part]
The manufacture method of the hollow type electron device package part of present embodiment at least includes:
Prepare to utilize the duplexer that electronic device is fixed on adherend by projection operation,
Prepare hollow type electronic component encapsulation sheet operation,
Described hollow type electronic component encapsulation sheet is arranged in the described electronic device of described duplexer
On operation,
By hot pressing, described electronic device is imbedded the work of described hollow type electronic component encapsulation sheet
Sequence and
After described embedment operation, described hollow type electronic component encapsulation sheet heat cure is made to obtain close
The operation of envelope body,
By the composition institute after described embedment operation and when obtaining the state before the operation of described seal
State the resin of hollow type electronic component encapsulation sheet between described electronic device and described adherend
The inlet of hollow bulb is set to X2, described tree when will obtain the state after the operation of described seal
Fat is when the inlet of described hollow bulb is set to Y2, and described inlet X2 is more than 0 μm and 50 μm
Below and being deducted the value after described inlet X2 by described inlet Y2 is below 60 μm.
As described adherend, it is not particularly limited, such as, tellite, pottery can be enumerated
Substrate, silicon substrate, metal basal board etc..In present embodiment, by sheet for sealing 11 to being mounted in
SAW chip 13 on tellite 12 carries out hollow sealing, makes hollow package part.Need
It is noted that SAW chip 13 refers to have SAW (Surface Acoustic Wave) filtering
The chip of device.That is, in present embodiment, electronic device to the present invention has SAW (Surface
Acoustic Wave) situation of chip of wave filter illustrates.
Fig. 7～Figure 11 is the manufacturer of the hollow type electron device package part for present embodiment is described
The schematic cross-section of method.
(operation of preparation layer stack)
In the manufacture method of the hollow package part of present embodiment, first, prepare at tellite
The duplexer 15 (with reference to Fig. 7) of multiple SAW chip 13 (SAW filter 13) it is equipped with on 12.
SAW chip 13 can be by utilizing the known method piezoquartz to being formed with regulation comb electrode
Carrying out cutting makes its singualtion be formed.In SAW chip 13 is carried to tellite 12,
The known device such as flip-chip bond machine, chip engagement machine can be used.SAW chip 13 and print
Brush circuit substrate 12 is electrically connected via salient point 13a.Additionally, SAW chip 13 and printing electricity
Hollow bulb 14 is maintained so that the surface on SAW filter surface will not be hindered between base board 12
The propagation of elastic wave.Can suitably set between SAW chip 13 and tellite 12 away from
From (width of hollow bulb), usually about 10～100 μm.
(preparing the operation of hollow type electronic component encapsulation sheet)
It addition, in the manufacture method of the hollow package part of present embodiment, prepare sheet for sealing 11 (ginseng
According to Fig. 1).
(operation of configuration hollow type electronic component encapsulation sheet)
Then, as shown in Figure 8, in downside heating plate 22, SAW chip 13 will be fixed with
Face up and configuration layer stack 15, and in SAW chip 13, configure sheet for sealing 11 simultaneously.
In this operation, can in downside heating plate 22 first configuration layer stack 15, then at duplexer 15
Upper configuration sheet for sealing 11, it is also possible to first stacking sheet for sealing 11 on duplexer 15, then by layer
The sandwich being laminated with duplexer 15 and sheet for sealing 11 is arranged in the heating plate 22 of downside.
(electronic device is imbedded the operation of hollow type electronic component encapsulation sheet)
Then, as it is shown in figure 9, carry out hot pressing by downside heating plate 22 and upside heating plate 24,
SAW chip 13 is imbedded sheet for sealing 11.Downside heating plate 22 and upside heating plate 24 are permissible
It is that the component possessed suppressed by flat board.Sheet for sealing 11 is as being used for protecting SAW chip 13 and attached
Belong to its key element to work from the sealing resin of external environment influence.
This embedment operation is to constitute the resin of sheet for sealing 11 to SAW filter 13 and printed wiring
Inlet X2 of the hollow bulb 14 between substrate 12 is that the mode of below more than 0 μm and 50 μm is entered
OK.Described inlet X2 is preferably below more than 0 μm and 30 μm, more than more preferably 0 μm
And 20 below μm.As the side that described inlet X2 is set to below more than 0 μm and 50 μm
Method, can be reached by the viscosity or adjustment hot pressing condition that adjust sheet for sealing 11.More specifically
Ground, can enumerate the higher method that is such as set to by pressure and temperature.
If additionally, be set to higher by the viscosity of sheet for sealing 11, then need to set pressure and temperature
Ding get Geng Gao, if but the viscosity of sheet for sealing 11 is set to higher, heat curing processes the most hereafter
In can reduce the flowing of resin constituting sheet for sealing 11.
It is therefore preferable that inlet X2 being set in the degree of below more than 0 μm and 50 μm,
Improve the viscosity of sheet for sealing 11, pressure and temperature is set to higher method simultaneously.
Specifically, as hot pressing condition when SAW chip 13 is imbedded sheet for sealing 11, according to
The viscosity of sheet for sealing 11 etc. and different, but temperature is preferably 40～150 DEG C, more preferably
60～120 DEG C, pressure for example, 0.1～10MPa, preferably 0.2～5MPa, the time for example, 0.3～10
Minute, preferably 0.5～5 minute.As hot-press method, parallel flat compacting, roll-in system can be enumerated.
Wherein, preferably parallel flat compacting.By hot pressing condition is arranged in described numerical range, become
Easily inlet X2 is arranged in described numerical range.
If it addition, considering close to SAW chip 13 and printed circuit board 12 of sheet for sealing 11
Conjunction property and the raising of tracing ability, suppress the most at reduced pressure conditions.
As described reduced pressure, pressure for example, 0.1～5kPa, preferably 0.1～100Pa, decompression
For example, 5～600 seconds retention time (starting the time started to compacting from decompression), preferably 10～300
Second.
(partition stripping process)
Then, as present embodiment, sheet for sealing is used when one side is with partition
When 11, peel off partition 11a (with reference to Figure 10).
(carry out heat cure and obtain the operation of seal)
Then, sheet for sealing 11 heat cure is made to obtain seal 25.
By described resin when obtaining the state after the operation of seal 25 to the inlet of hollow bulb 14
When being set to Y2, it is below 60 μm to be deducted the value after described inlet X2 by described inlet Y2
Mode carry out obtaining the operation of this seal.Described inlet X2 is deducted by described inlet Y2
After value be preferably below 30 μm, below more preferably 10 μm.As will be by described inlet
Y2 deduct described inlet X2 after the value method that is set to below 60 μm, can be by adjusting
Viscosity before the solidification of sheet for sealing 11 or the curing rate when heating adjust close in the way of accelerating
The constituent material of envelope sheet 11 is reached.If more specifically, the viscosity of sheet for sealing 11 being set to
Higher, then by heat during heat cure, the amount of the period resin flowing until heat cure can be suppressed.
If it addition, the curing rate when heating adjusts the constituent material of sheet for sealing 11 in the way of accelerating,
Then can shorten flowing time, the amount of flowing can be suppressed.
Specifically, the condition processed as heat cure, according to viscosity, the composition material of sheet for sealing 11
Material waits and different, but heating-up temperature is preferably more than 100 DEG C, more preferably more than 120 DEG C.Another
Aspect, the upper limit of heating-up temperature is preferably less than 200 DEG C, more preferably less than 180 DEG C.During heating
Between be preferably more than 10 minutes, more preferably more than 30 minutes.On the other hand, heat time heating time is upper
Limit preferably less than 180 minutes, more preferably less than 120 minutes.Additionally, can add as required
Pressure, preferably more than 0.1MPa, more preferably more than 0.5MPa.On the other hand, the upper limit is preferred
For below 10MPa, more preferably below 5MPa.
By being thermally cured the condition setting of process in described numerical range, easily will be from embedment operation
Afterwards to the period after heat curing processes resin flow distance, will be deducted by inlet Y2 described
Value after inlet X2 is set to below 60 μm.
When only sealing 1 SAW filter 13 as electronic device, seal 25 can be made
Become 1 hollow type electron device package part.It addition, multiple SAW filter 13 are sealed together
Time, by SAW filter being split respectively, 1 hollow type electronic device envelope can be respectively prepared
Piece installing.That is, as present embodiment, when multiple SAW filter 13 are sealed together,
Further, it is possible to carry out following composition.
(cutting action)
After heat curing processes, can be with cutting sealing body 25 (with reference to Fig. 6).Thus, it is possible to obtain
The hollow package part 18 (hollow type electron device package part) of SAW chip 13 unit.
(substrate installation procedure)
Following operation can be carried out: hollow packaging part 18 is formed salient point as required, then by it
It is arranged on the substrate installation procedure of other substrate (not having diagram).By hollow package part 18 to
In the installation of substrate, it is possible to use the known device such as flip-chip bond machine, chip engagement machine.
In above-mentioned embodiment, to the hollow type electronic device of the present invention as having movable part
The situation of the SAW chip 13 of semiconductor chip is illustrated.But, as long as in the present invention
Casement electronic device has hollow bulb between adherend and electronic device, then be not limited to this example.Example
As, it is also possible to it is, as movable part, there is the MEMS (Micro such as pressure transducer, vibrating sensor
Electro Mechanical Systems) semiconductor chip.
It addition, in above-mentioned present embodiment, to using hollow type electronic component encapsulation sheet, passing through
The situation of parallel flat compacting embedment electronic device is illustrated, but the invention is not restricted to this example, also
Can be in the vacuum chamber of vacuum state, by mold release film by close with hollow type electronic device for electronic device
After the sandwich of envelope sheet is airtight, in chamber, imports the gas of more than atmospheric pressure, electronic device is buried
Enter the Thermocurable sheet for sealing of hollow type electronic component encapsulation sheet.Specifically, it is also possible to by
Method described in Japanese Unexamined Patent Publication 2013-52424 publication, imbeds hollow type electronics by electronic device
The Thermocurable sheet for sealing of device sealing sheet.
It addition, in above-mentioned embodiment, to the hollow type electronic device employing sheet for sealing 11
The manufacture method of packaging part is illustrated, but as long as described inlet X2 is more than 0 μm and 50 μm
Below and being deducted the value after described inlet X2 by described inlet Y2 is below 60 μm,
Any hollow type electronic component encapsulation sheet can be used.Such as, known hollow type electronics is used
Device sealing sheet, obtains seal by the hot pressing condition in control embedment operation, heat cure
The condition that heat cure in operation processes, can reach described inlet X2 is more than 0 μm and 50 μm
Below and being deducted the value after described inlet X2 by described inlet Y2 is below 60 μm.Its
In, easily reach when using sheet for sealing 11.
Embodiment
Citing below describes the preferred embodiments of the present invention in detail.Wherein, about described in this embodiment
Material, use level etc., as long as no the record being particularly limited to, cannot by the scope of the present invention only
It is defined in these materials, use level.
The composition of the sheet for sealing used in an embodiment is illustrated.
Epoxy resin: YSLV-80XY (the bisphenol F type epoxy tree of Nippon Steel Chemical Co., Ltd
Fat, epoxide equivalent 200g/eq., softening point 80 DEG C)
Phenolic resin: LVR8210DL (linear phenolic resin, the hydroxyl equivalent of group's honor length of schooling
104g/eq., softening point 60 DEG C)
Thermoplastic resin: HME-2006M (the carboxylic acrylic acid of Negami Chemical Ind Co., Ltd.
Ester copolymer, weight average molecular weight: about 600,000, glass transition temperature (Tg) :-35 DEG C)
The FB-5SDC of inorganic filler A: Deuki Kagaku Kogyo Co., Ltd (mean diameter 5 μm,
Do not make surface to process)
Inorganic filler B: the SO-25R (mean diameter 0.5 μm) to Co., Ltd. Admatechs
With 3-methacryloxypropyl trimethoxy silane (ProductName of KCC of SHIN-ETSU HANTOTAI:
KBM-503) carry out surface and process the inorganic filler obtained.Relative to inorganic filler B 100
Weight portion, carries out surface process with the silane coupler of 1 weight portion.
White carbon black: the #20 that Mitsubishi chemical Co., Ltd manufactures
Curing accelerator: the 2P4MHZ-PW (2-phenyl-4-that Shikoku Chem manufactures
Hydroxymethyl 5-Methylimidazole .)
[making of the electronic component encapsulation sheet of embodiment and comparative example]
According to the proportioning of the sheet for sealing described in table 1, each composition is made to dissolve, be dispersed in as solvent
Butanone in, obtain the varnish of concentration 85 weight %.This varnish is coated on the silicone demoulding process
After partition on after, at 110 DEG C be dried 5 minutes.Thus, the sheet material that thickness is 55 μm is obtained.
By this sheet material stacking 4 layers, make the hollow sealing sheet that thickness is 220 μm.
(viscosimetric analysis of 90 DEG C of sheet for sealing)
Flow graph (HAAKE company system, MARS III) is used to utilize parallel plate method to measure embodiment
With the viscosity of 90 DEG C of the sheet for sealing made in comparative example.In more detail, at gap 1mm, put down
Andante diameter 8mm, speed of rotation 5s-1, strain 0.05%, the condition of heating rate 10 DEG C/min
Under, in the range of 50 DEG C～130 DEG C, measure viscosity, read the value of now 90 DEG C.Result such as table
Shown in 1.
(resin is to the entering evaluation of packaging part hollow bulb)
<step A>
First, 1 analog chip preparing following specification utilizes resin projection to be installed on glass substrate
The analog chip installation base plate of (long 76mm, wide 26mm, thick 1.0mm).Glass substrate and mould
The gap width intending chip chamber is 50 μm.
<specification of analog chip>
Chip size is long 3mm, wide 3mm, thick 200 μm, is formed with high 50 μm, diameter 100 μm
Resin projection (material of resin: acrylic resin).Number of lugs is 117 projections.Projection
Allocation position is 300 μm spacing.The material of analog chip is silicon wafer.
Specifically, by under following engaging condition, described analog chip is installed on described glass base
Plate, has been thereby preparing for analog chip installation base plate.
<engaging condition>
Device: SUNX (strain) is made
Engaging condition: 200 DEG C, 3N, 1 second, ultrasonic power 2W
<step B>
The sheet for sealing of thickness 220 μm made by described embodiment, comparative example is cut into long 1cm,
Wide 1cm and make sample.
<step C>
Described sample is arranged on the described analog chip of described analog chip installation base plate.
<step D>
Under the conditions of following embedment, described analog chip is imbedded described sample.
<embedment condition>
Drawing method: flat board is suppressed
Temperature: 75 DEG C
Plus-pressure: 3000kPa
Vacuum: 1.6kPa
Press time: 1 minute
<step E>
After atmospheric pressure opens, measure the resin constituting described sample to described analog chip and described glass
Inlet X1 of the hollow bulb between glass substrate.Specifically, manufactured by KEYENCE company
Trade name " digital microscope " (200 times), measure resin to analog chip and ceramic substrate it
Between inlet X1 of hollow bulb.For resin inlet X1, measure the end from SAW chip
The maximum of the resin that portion enters to hollow bulb arrives distance, as resin inlet X1.Additionally,
Do not enter into, hollow bulb is when extending more laterally than SAW chip, represents resin inlet with negative sign.
The situation that resin inlet X1 is 0 μm～50 μm is evaluated as "○", will be less than 0 μm or
It is evaluated as "×" more than the situation of 50 μm.Result is shown in Table 1.
<step F>
After described step E, place 1 hour in the air drier of 150 DEG C.Thus, institute is made
State sample heat cure and obtain seal sample.
<step G>
Afterwards, inlet Y1 of resin hollow bulb in seal sample is measured.Assay method with
Inlet X1 is same.
Afterwards, obtain and deducted the value after inlet X1 by inlet Y1.Result is shown in Table 1.
It is evaluated as "○" by being deducted, by inlet Y1, the situation that the value after inlet X1 is below 60 μm,
The situation bigger than 60 μm is evaluated as "×".Result is shown in Table 1.
Additionally, comparative example 2 creates space in step D, inlet Y1 therefore can not be measured.
Therefore, the most do not obtain and deducted the value after inlet X1 by inlet Y1.
[table 1]
Symbol description
11 hollow type electronic component encapsulations are with sheet (sheet for sealing)
13 SAW filter (electronic device)
14 hollow bulbs
15 duplexers
18 hollow type electron device package parts
25 seals
112 glass substrates
113 analog chips
113a resin projection
114 hollow bulbs
115 analog chip installation base plates
Claims (3)
1. a hollow type electronic component encapsulation sheet, it is characterised in that by following step A～
Inlet X1 of the sequential determination of step G is below more than 0 μm and 50 μm, and by inlet
It is below 60 μm that Y1 deducts the value after described inlet X1,
Step A: prepare to utilize resin projection to be installed on glass base 1 analog chip of following specification
The analog chip installation base plate of plate,
Step B: prepare the hollow type electronic device of the size of long 1cm, wide 1cm, thick 220 μm
The sample of sheet for sealing,
Step C: described sample is arranged in the described analog chip of described analog chip installation base plate
On,
Step D: under the conditions of following embedment, imbeds described sample by described analog chip,
Step E: after described step D, measures and constitutes the resin of described sample to described simulation core
Inlet X1 of the hollow bulb between sheet and described glass substrate,
Step F: after described step E, places 1 hour in the air drier of 150 DEG C, makes
Described sample heat cure and obtain seal sample, and
Step G: measure the inlet of the described resin described hollow bulb in described seal sample
Y1,
Specification ＞ of ＜ analog chip
Chip size is long 3mm, wide 3mm, thick 200 μm, and the resin being formed with high 50 μm is convex
Block,
＜ imbeds condition ＞
Drawing method: flat board is suppressed
Temperature: 75 DEG C
Plus-pressure: 3000kPa
Vacuum: 1.6kPa
Press time: 1 minute.
Hollow type electronic component encapsulation sheet the most according to claim 1, it is characterised in that
Viscosity when 90 DEG C is more than 300kPa s.
3. the manufacture method of a hollow type electron device package part, it is characterised in that including:
Prepare to utilize the duplexer that electronic device is fixed on adherend by projection operation,
Prepare hollow type electronic component encapsulation sheet operation,
Described hollow type electronic component encapsulation sheet is arranged in the described electronic device of described duplexer
On operation,
By hot pressing, described electronic device is imbedded the work of described hollow type electronic component encapsulation sheet
Sequence and
After described embedment operation, described hollow type electronic component encapsulation sheet heat cure is made to obtain close
The operation of envelope body,
By during state after described embedment operation and before obtaining the operation of described seal, constitute institute
State the resin of hollow type electronic component encapsulation sheet between described electronic device and described adherend
The inlet of hollow bulb is set to X2, when will obtain the state after the operation of described seal, described
Resin when the inlet of described hollow bulb is set to Y2, described inlet X2 be more than 0 μm and
Below 50 μm, and to be deducted the value after described inlet X2 by described inlet Y2 be below 60 μm.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015-041066 | 2015-03-03 | ||
| JP2015041066A JP6422370B2 (en) | 2015-03-03 | 2015-03-03 | Hollow type electronic device sealing sheet and method for manufacturing hollow type electronic device package |
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|---|---|
| CN105938817A true CN105938817A (en) | 2016-09-14 |
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| CN201610118460.3A Pending CN105938817A (en) | 2015-03-03 | 2016-03-02 | Hollow electronic device sealing sheet and manufacturing method of the same |
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| Country | Link |
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| JP (1) | JP6422370B2 (en) |
| CN (1) | CN105938817A (en) |
| SG (1) | SG10201601597WA (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108250681A (en) * | 2016-12-28 | 2018-07-06 | 日东电工株式会社 | Resin sheet |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6283624B2 (en) * | 2015-05-28 | 2018-02-21 | 日東電工株式会社 | Hollow electronic device sealing sheet, hollow electronic device package manufacturing method, and hollow electronic device package |
| WO2021010206A1 (en) | 2019-07-12 | 2021-01-21 | 日東電工株式会社 | Resin sheet for sealing |
| JPWO2021010207A1 (en) | 2019-07-12 | 2021-01-21 | ||
| JPWO2021010205A1 (en) | 2019-07-12 | 2021-01-21 | ||
| CN114096412A (en) | 2019-07-12 | 2022-02-25 | 日东电工株式会社 | Multilayer resin sheet for sealing |
| WO2021010204A1 (en) | 2019-07-12 | 2021-01-21 | 日東電工株式会社 | Resin sheet for sealing |
| KR20220035092A (en) | 2019-07-12 | 2022-03-21 | 닛토덴코 가부시키가이샤 | resin sheet for sealing |
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| JP2014209568A (en) * | 2013-03-28 | 2014-11-06 | 日東電工株式会社 | Hollow sealing resin sheet and method for manufacturing hollow package |
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| JP2012054363A (en) * | 2010-08-31 | 2012-03-15 | Kyocera Chemical Corp | Sealing method of electronic component |
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| JP2003017979A (en) * | 2001-06-28 | 2003-01-17 | Nagase Chemtex Corp | Surface acoustic wave device and its manufacturing method |
| CN101562141A (en) * | 2008-04-16 | 2009-10-21 | 株式会社村田制作所 | Method and apparatus for manufacturing electronic device |
| CN102725323A (en) * | 2010-05-26 | 2012-10-10 | 京瓷化成株式会社 | Sheet-like resin composition, circuit component using the sheet-like resin composition, method for sealing electronic component, method for connecting electronic component, method for affixing electronic component, composite sheet, electronic component |
| JP2014209568A (en) * | 2013-03-28 | 2014-11-06 | 日東電工株式会社 | Hollow sealing resin sheet and method for manufacturing hollow package |
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Also Published As
| Publication number | Publication date |
|---|---|
| JP6422370B2 (en) | 2018-11-14 |
| SG10201601597WA (en) | 2016-10-28 |
| JP2016162909A (en) | 2016-09-05 |
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