CN105926033A - Method Of Measuring Intervals On Raw Material Melt Liquid Surface And At Seed Crystal Lower End, Seed Crystal Pre-heating Method And Single Crystal Manufacturing Method - Google Patents

Method Of Measuring Intervals On Raw Material Melt Liquid Surface And At Seed Crystal Lower End, Seed Crystal Pre-heating Method And Single Crystal Manufacturing Method Download PDF

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CN105926033A
CN105926033A CN201610106091.6A CN201610106091A CN105926033A CN 105926033 A CN105926033 A CN 105926033A CN 201610106091 A CN201610106091 A CN 201610106091A CN 105926033 A CN105926033 A CN 105926033A
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crystal seed
raw material
point
real image
molten solution
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CN105926033B (en
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清水泰顺
高梨启
高梨启一
中野清贵
齐藤正夫
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Sumco Corp
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Sumco Corp
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon

Abstract

An interval measuring method is a method of measuring the intervals on a raw material melt liquid surface and at the lower end of a seed crystal configured on the raw material melt liquid, before cultivating a single crystal at the lower end of the seed crystal by contacting the lower end of the seed crystal with a raw material melt liquid in a crucible, wherein an optical method comprises the steps of obtaining the position information of a real image lower end point and a mirror image point, wherein the real image lower end point is a specific point at the lower end of the seed crystal, and the mirror image point is a point corresponding to the real image lower end point in the mirror image of the seed crystal mapped on the liquid surface; setting the interval between the raw material melt liquid surface and the lower end of the seed crystal as 0 at the point where the positions of the real image lower end point and the mirror image point are consistent, thereby obtaining the interval between the raw material melt liquid surface and the lower end of the seed crystal. By the method, the interval between the raw material melt liquid surface and the seed crystal can be measured accurately before the raw material melt liquid surface and the seed crystal are contacted.

Description

Raw material molten solution liquid level and the measuring space method of crystal seed lower end, the pre-heating mean of crystal seed and the manufacture method of monocrystalline
Technical field
The present invention relates to liquid level and the assay method at interval of crystal seed lower end, the pre-heating mean of crystal seed and the manufacture method of monocrystalline of the raw material molten solution of use in single crystal cultivation.
Background technology
The manufacture method of monocrystal silicon has vertical pulling method (Czochralski method, hereinafter referred to as " CZ method ").In CZ method, firstly, for the silicon melt as raw material being contained in crucible, configure the crystal seed (seed) being made up of monocrystal silicon up.Then, make crystal seed close with silicon melt, after crystal seed contact silicon melt, crystal seed is lifted upward, thus makes monocrystal silicon grow under crystal seed.When making crystal seed contact silicon melt, crystal seed lower end is big with the temperature difference of silicon melt liquid level, then crystal seed occurs highdensity dislocation due to thermal stress.
Dislocation can be passed through necking down (Dash Necking) method and reduce.But dislocation can residue in germ nucleus portion with certain frequency, although this frequency relatively low (below this remaining dislocations being referred to as " shaft-like dislocation ").In order to reduce the occurrence frequency of this shaft-like dislocation, it is necessary to make the dislocation density carrying out the crystal before necking down reduce.Therefore, the density reducing the dislocation occurred when crystal seed contacts with silicon melt is effective.
To this end, preferably make the temperature temperature as close possible to silicon melt liquid level of the crystal seed lower end before will contacting with silicon melt.When crystal seed is configured at the top of silicon melt, crystal seed is heated due to the radiant heat from silicon melt.Therefore, the temperature of crystal seed is that crystal seed is the highest closer to silicon melt.Thus, in order to reduce the temperature difference of crystal seed lower end and silicon melt liquid level, crystal seed is configured as close possible to silicon melt liquid level and preheated is effective.
Prior art literature
Patent documentation
Patent documentation 1: Japanese Unexamined Patent Publication 2005-170773 publication.
Summary of the invention
Invent problem to be solved
But, in the past, the interval of silicon melt liquid level and crystal seed lower end (hereinafter referred to as " being spaced under crystal ") fails Accurate Determining, when crystal seed is preheated, operator relative to the height and position of silicon melt liquid level, become target interval so that being spaced under crystal by visually regulation crystal seed.Therefore, when crystal seed is preheated, actually it is spaced under crystal and becomes target interval the most exactly.Further, under crystal, interval is the most different from the deviation of target interval.Therewith, the seeding temperature in the moment terminating preheating is also the most different.Its result, when being contacted with raw material molten solution by crystal seed, the temperature of crystal seed lower end may increase with the temperature difference of raw material molten solution liquid level.Now, even if reducing dislocation by necking technique, shaft-like dislocation may in crystal, still be remained.
Being additionally, since and fail to be spaced under Accurate Determining crystal, if reducing target interval, such as, being set as below 3mm, then crystal seed may surprisingly contact raw material molten solution.In this case, crystal seed is not fully warmed-up, and when raw material molten solution liquid level is big with the temperature difference of crystal seed lower end, crystal seed contacts with raw material molten solution, therefore, and may be with high density generation dislocation in crystal seed.Its result, in crystal, the probability of shaft-like dislocation residual raises.
Therefore, in order to suppress to generate the dislocation caused because of raw material molten solution liquid level and the temperature difference of crystal seed lower end in crystal seed, it is necessary to be spaced under Accurate Determining crystal.
Patent Document 1 discloses in the monocrystalline utilizing CZ method manufactures, before single crystal cultivation, regulate the device of the initial position of the above-below direction of raw material molten solution liquid level.This device possess detection from reference position the detection means of distance to raw material molten solution liquid level.But in this detection means, it is to be contacted the distance detected from reference position to raw material molten solution liquid level with raw material molten solution by crystal seed.Therefore, before crystal seed contacts with raw material molten solution, it is impossible to know the interval of crystal seed and raw material molten solution.
The present invention is directed to above-mentioned condition form, its object is to provide: can be before crystal seed contacts with raw material molten solution liquid level, the method at the interval of Accurate Determining raw material molten solution liquid level and crystal seed lower end.
A further object of the present invention is to provide the pre-heating mean of the repeatability of the seeding temperature after can improving preheating.
A further object of the present invention is to provide the manufacture method of the monocrystalline of the importing that can suppress dislocation.
Solve the scheme of problem
The purport of the present invention is: the raw material molten solution liquid level of following (1) and the assay method at the interval of crystal seed lower end, the manufacture method of monocrystalline of the pre-heating mean of crystal seed of following (2) and following (3).
(1) measuring space method, it is for cultivating before monocrystalline in the lower end of described crystal seed making the lower end of crystal seed contact with the raw material molten solution in crucible, measure the liquid level of described raw material molten solution and be configured at the method at interval of lower end of crystal seed above described raw material molten solution, wherein
Optically, obtain positional information and the positional information of mirror point of real image lower extreme point, described real image lower extreme point is the specified point of described crystal seed lower end, and described mirror point is to mirror point corresponding with described real image lower extreme point in the mirror image of the described crystal seed of described liquid level；
At the point of the position of described real image lower extreme point Yu the position consistency of described mirror point, the lower end of the liquid level of described raw material molten solution and described crystal seed be spaced apart 0, thus obtain the liquid level of described raw material molten solution and the interval of the lower end of described crystal seed.
(2) pre-heating mean of crystal seed, the method is the ullage configuration crystal seed of the raw material molten solution used in the cultivation of monocrystalline, and the method preheating described crystal seed, and the method comprises following operation:
Measuring space method according to above-mentioned (1) measures the operation at the interval of the liquid level of described raw material molten solution and the lower end of described crystal seed；
In order to eliminate the difference of described interval and the target interval measured in the operation of described measuring interval, make the operation that at least one party of described crystal seed and described crucible moves；With
After described mobile process, the operation that described crystal seed is preheated.
(3) manufacture method of monocrystalline, this manufacture method comprises following operation:
Operation crystal seed preheated according to the pre-heating mean described in above-mentioned (2)；
After described preheating procedure, at least one party of described crystal seed and described crucible is made to move, the operation making described crystal seed and contacting with the described raw material molten solution being contained in described crucible；With
After described contact operation, make at least one party of described crystal seed and described crucible move, make the operation that monocrystalline grows in the lower end of described crystal seed.
Invention effect
By the measuring space method of the present invention, raw material molten solution liquid level and the interval of crystal seed lower end can be measured exactly before crystal seed contacts with raw material molten solution liquid level.And, by the pre-heating mean of the present invention, the repeatability of seeding temperature after preheating can be improved.By the manufacture method of the monocrystalline of the present invention, the importing of dislocation can be suppressed.
Accompanying drawing explanation
Figure 1A is the figure of the configuration of the raw material molten solution during measuring space method schematically showing and implementing the present invention and crystal seed, represents the state that crystal seed separates with fused solution liquid level.
Figure 1B is the figure schematically showing the state that crystal seed lower end contacts with fused solution liquid level.
Fig. 2 is to schematically show to shoot the raw material molten solution shown in Figure 1A from oblique upper and the figure of image that crystal seed obtains.
Detailed description of the invention
Referring to the drawings embodiment of the present invention are described in detail.
Figure 1A is the figure of the configuration of the raw material molten solution during measuring space method schematically showing and implementing the present invention and crystal seed, represents the state that crystal seed lower end separates with raw material molten solution liquid level.Figure 1B is the figure schematically showing the state that crystal seed lower end contacts with the liquid level of raw material molten solution.Fig. 2 is to schematically show to shoot the raw material molten solution shown in Figure 1A from oblique upper and the figure of image that crystal seed obtains.
Raw material molten solution 1 is contained in the crucible 4 possessed in pulling apparatus.The top configuration crystal seed 2 of raw material molten solution 1.Such as when cultivating monocrystal silicon, raw material molten solution 1 is made up of the fused solution of silicon, and crystal seed 2 is made up of the monocrystalline of silicon.
Pulling apparatus possesses photographing unit 7.Photographing unit 7 such as can be set to CCD camera.The scope (with reference to Fig. 2) of the real image 2R comprising crystal seed 2 by photographing unit 7 shooting and the mirror image 2M of the crystal seed 2 of the liquid level 1a mirrored in raw material molten solution 1.By this shooting, it is possible to obtain the positional information of the real image 2R of crystal seed 2, mirror the positional information of the mirror image 2M of the crystal seed 2 of liquid level 1a in raw material molten solution 1.
Crystal seed 2 is connected with lifting shafts 6 such as tinsels.The driving means 5 that pulling apparatus is possessed is connected in lifting shaft 6.By driving means 5, via lifting shaft 6, crystal seed 2 can be moved along the vertical direction.Crystal seed 2 thus can be made close with crucible 4 and separate.Drive volume (comprising the situation that drive volume is 0) according to driving means 5 can detect the crystal seed 2 height and position relative to the reference position of pulling apparatus.
In the present embodiment, crucible 4 is set to the most not move along the vertical direction relative to the reference position of pulling apparatus.Therefore, the height and position of the crystal seed 2 detected by driving means 5 is corresponding to the height and position of the crystal seed 2 on the basis of the height and position of crucible 4.Here, " height and position of the crystal seed 2 on the basis of the height and position of crucible 4 " (hereinafter also referred to as " height and position of crystal seed 2 ") can be not necessarily crucible 4 and crystal seed 2 interval in the vertical direction, such as can and this interval there is certain difference.
In the present embodiment, the lower surface that lower end 2L is crystal seed 2 of crystal seed 2 is overall.In the following description, on image 3, the specified point of the lower end 2L of real image 2R is referred to as " real image lower extreme point " P1, in the upper end 2U (mirror image of lower end 2L) of mirror image 2M, the point corresponding with real image lower extreme point P1 is referred to as " mirror point " P2.In image 3, real image lower extreme point P1 arbitrarily can select on the 2L of lower end.
When the interval L of the lower end 2L of the liquid level 1a and crystal seed 2 measuring raw material molten solution 1, first passing through driving means 5 makes crystal seed 2 move along the vertical direction, simultaneously for multiple height and positions of crystal seed 2, obtain the image 3 containing real image 2R and mirror image 2M by photographing unit 7 respectively.
Then, for each gained image 3, obtain real image lower extreme point P1 position on image 3 and mirror point P2 position on image 3.So, positional information and the positional information of mirror point P2 of real image lower extreme point P1 can optically be obtained.
About position and the position of mirror point P2 of the real image lower extreme point P1 on image 3, only measure the position with the direction corresponding to upper and lower (vertical) direction of pulling apparatus, when image 3 is digital form, specify with pixel unit.As shown in Figure 1A, the real image 2R of the crystal seed 2 and mirror image 2M of crystal seed 2 is positioned essentially at the position of symmetry relative to the liquid level 1a of raw material molten solution 1, equally, crystal seed 2 move after real image 2R ' and mirror image 2M ' be positioned essentially at symmetrical position relative to liquid level 1a.
Then, according to the data obtained, the height and position z and the position z of real image lower extreme point P1 on image 3 of crystal seed 2 are obtainedp1Regression equation (hereinafter referred to as " real image regression equation "), and the position z of mirror point P2 on the height and position z of crystal seed 2 and image 3p2Regression equation (hereinafter referred to as " mirror image regression equation ").Specifically, according to once returning, real image regression equation is represented by zp1=a1×z+b1, mirror image regression equation is represented by zp2=a2×z+b2(a1、b1、a2And b2For constant).
In mirror image 2M, fluctuating due to the fluctuating of liquid level 1a, therefore the position of the mirror point P2 on image 3 comprises the impact of this fluctuation.The regression equation being reduced for the impact making mirror image regression equation be fluctuation, can increase the shooting number of times of the crystal seed 2 of differing heights position or identical height and position, and image 3 each to gained measures the position of the mirror point P2 on image 3, increases and measures number.To this end, this mensuration number be preferably more than tens of point, such as more than 40.
Then, when crystal seed 2 is positioned at arbitrary height position z, with Δ Lp=(Preal-Pmirror) obtain distance, delta L of real image lower extreme point P1 on image 3 and mirror point P2p。
Preal: real image lower extreme point P1 position on image 3 when height and position z is substituted into real image regression equation.That is, Preal=zp1=a1×z+b1。
Pmirror: mirror point P2 position on image 3 when height and position z is substituted into mirror image regression equation.That is, Pmirror=zp2=a2×z+b2。
Therefore, it is represented by
ΔLp=(a1-a2)×z+(b1-b2)　　　　　(A)
Distance, delta LpCan be described as: based on the positional information utilizing optical means to obtain, the relative position of real image 2R on the basis of the position of mirror image 2M.
If the displacement Δ z of the height and position z of crystal seed 2 and distance, delta L on image 3pCorrespondence, then according to above formula (A), have Δ Lp =(a1-a2)×Δz.Therefore, Δ z=Δ Lp/(a1-a2)。
That is, the distance of real image lower extreme point P1 and mirror point P2 is Δ LpTime, if only the height and position of crystal seed 2 being reduced Δ z, then the distance of real image lower extreme point P1 and mirror point P2 reduces Δ LpAmount (Δ Lp=0), the lower end 2L of crystal seed 2 contacts with the liquid level 1a of raw material molten solution 1.Therefore, before mobile crystal seed 2, the interval L of the liquid level 1a of raw material molten solution 1 and the lower end 2L of crystal seed 2 can be described as Δ Lp/(a1-a2).This represents, according to the point of real image regression equation and mirror image regression equation, the position of real image lower extreme point P1 and the position consistency of mirror point P2, i.e. crystal seed 2 is positioned at and meets zp1=zp2Height and position z time, the liquid level 1a of raw material molten solution 1 and the lower end 2L of crystal seed 2 were spaced apart for 0 (with reference to Figure 1B), thus obtained interval L.
It addition, the motion of the motion of real image and mirror image is generally of symmetry, a therefore can be set to1=-a2.Accordingly it is also possible to do not use the mirror image regression equation easily affected by the fluctuating of liquid level, interval L is set to Δ Lp/ (2a1)。
According to above method, the subjectivity of operator can be got rid of, before the lower end 2L of crystal seed 2 contacts with the liquid level 1a of raw material molten solution 1, measure the liquid level 1a of the raw material molten solution 1 and interval L of the lower end 2L of crystal seed 2 exactly.
When being preheated by crystal seed 2, first measure the liquid level 1a of raw material molten solution 1 and the interval L of the lower end 2L of crystal seed 2 according to said method.Then for the liquid level 1a of raw material molten solution 1 and the interval of the lower end 2L of crystal seed 2, make crystal seed 2 move towards the direction eliminating interval L and the difference of target interval measured by driving means 5, and only move and this poor suitable amount.Thus, the interval of the lower end 2L of the liquid level 1a of raw material molten solution 1 and crystal seed 2 essentially becomes target interval.
Then, this state is kept such as several minutes.Thus, crystal seed 2 accepts to be preheated from the radiant heat of raw material molten solution 1.Every time crystal seed 2 all can preheat from the liquid level 1a of raw material molten solution 1 at a prescribed interval, thus can improve the repeatability of crystal seed 2 temperature after preheating.If it addition, target interval is set as sufficiently small, then can fully reduce temperature and the temperature difference of the liquid level 1a of raw material molten solution 1 of the lower end 2L of crystal seed 2, thermal shock when lower end 2L contacts with liquid level 1a can be reduced.Dislocation thus can be suppressed to import in crystal seed 2.
And, liquid level 1a and the interval of lower end 2L can be measured exactly, thus can avoid the unexpected situation about contacting with raw material molten solution 1 of crystal seed 2.Such as when crystal seed 2 is preheated, operator by the conventional method at the interval of the lower end 2L of the liquid level 1a and crystal seed 2 that visually adjust raw material molten solution 1, when this interval hour for target, such as when being set as below 3mm, crystal seed 2 may unexpected contact with raw material molten solution 1.But according to the present invention, even if this interval is set as such as below 3mm, it is possible to preheating crystal seed 2, and do not make it contact raw material molten solution 1.
But the liquid level 1a of raw material molten solution 1 has fluctuating sometimes, it is therefore desirable to consider this fluctuating, is set as the target interval of liquid level 1a with lower end 2L making crystal seed 2 not contact with raw material molten solution 1.Preferred more than the 1mm of target interval.
After crystal seed 2 being preheated by above method, make crystal seed 2 decline, make crystal seed 2 and contact with the raw material molten solution 1 being contained in crucible in 4, then make crystal seed 2 rise, make monocrystalline grow in the lower end of crystal seed, thus can manufacture monocrystalline.
In embodiments above, crucible 4 is set to move the most along the vertical direction relative to the reference position of pulling apparatus but it also may be that crucible 4 passes through the composition that driving means can move along the vertical direction.In this case, the crucible 4 height and position relative to the reference position of pulling apparatus can be detected according to the drive volume of this driving means.Then, in this case, the height and position of the crystal seed 2 on the basis of the height and position of crucible 4 such as can be set to: the difference of the height and position of the crucible 4 detected according to the drive volume of driving means and the height and position of the crystal seed 2 detected according to the drive volume of driving means 5.
Crystal seed 2 can also is that the composition moved the most along the vertical direction relative to the reference position of pulling apparatus.In this case, the height and position of the crystal seed 2 on the basis of the height and position of crucible 4 such as can be set to the height and position of the crucible 4 detected according to driving means.
In the case of crucible 4 can move along the vertical direction, when crystal seed 2 is preheated, in order to eliminate the difference of measured interval L and target interval, in addition to making crystal seed 2 move along the vertical direction, or replace making crystal seed 2 move along the vertical direction, crucible 4 can be made to move along the vertical direction.
Additionally, in the case of crucible 4 can move along the vertical direction, when manufacturing monocrystalline, in addition to making crystal seed 2 move along the vertical direction, or replace making crystal seed 2 move along the vertical direction, crucible 4 can be made to move along the vertical direction, thus make crystal seed 2 contact with raw material molten solution 1, make monocrystalline grow under crystal seed 2.
In the present invention, raw material molten solution 1 and crystal seed 2 as object are not limited to be formed by silicon, as long as the mirror image 2M of crystal seed 2 mirrors the liquid level 1a in raw material molten solution 1, and can be by other material such as germanium, Al2O3(sapphire) or compound semiconductor materials are formed.
Symbol description
1: the liquid level of raw material molten solution, 1a: raw material molten solution, 2: the lower end of the mirror image of the real image of crystal seed, 2R: crystal seed, 2M: crystal seed, 2L: crystal seed, 3: image, 4: crucible, P1: real image lower extreme point, P2: mirror point.

Claims (8)

1. measuring space method, it is for cultivating before monocrystalline in the lower end of described crystal seed making the lower end of crystal seed contact with the raw material molten solution in crucible, measure the liquid level of described raw material molten solution and be configured at the method at interval of lower end of crystal seed above described raw material molten solution, wherein
Optically, obtain positional information and the positional information of mirror point of real image lower extreme point, described real image lower extreme point is the specified point of described crystal seed lower end, and described mirror point is to mirror point corresponding with described real image lower extreme point in the mirror image of the described crystal seed of described liquid level；
At the point of the position of described real image lower extreme point Yu the position consistency of described mirror point, the lower end of the liquid level of described raw material molten solution and described crystal seed be spaced apart 0, thus obtain the liquid level of described raw material molten solution and the interval of the lower end of described crystal seed.
2. the measuring space method described in claim 1, wherein,
When at least one party of the liquid level of the described raw material molten solution in described crystal seed and described crucible has multiple height and position, each height and position is optically obtained positional information and the positional information of described mirror point of described real image lower extreme point；
Based on following displacement (a) and (b), obtain the described liquid level of described raw material molten solution and the interval of the lower end of described crystal seed:
The displacement of the height and position of the described crystal seed obtained on the basis of the liquid level position of (a) described raw material molten solution in described crucible,
(b) that change, displacement of relative position of described real image of by the position of the described mirror image of described crystal seed of based on described positional information on the basis of corresponding with the displacement of described (a).
3. the measuring space method described in claim 2, wherein,
On the basis of the height and position of the described crucible accommodating described raw material molten solution, when described crystal seed has multiple height and position, each height and position is shot described crystal seed and described liquid level, obtain the described real image containing described crystal seed and the image of described mirror image, obtain described positional information and the described positional information of described mirror point of the described real image lower extreme point of described crystal seed on the image.
4. the measuring space method described in claim 2, wherein,
By the described height and position of described crystal seed and the regression equation of the position of the regression equation i.e. real image regression equation of the position of described real image lower extreme point and the described height and position of described crystal seed and described mirror point, obtain the displacement of described (a) and the relation of the displacement of described (b).
5. the measuring space method described in claim 3, wherein,
By the described height and position of described crystal seed and the regression equation of the position of the regression equation i.e. real image regression equation of the position of described real image lower extreme point and the described height and position of described crystal seed and described mirror point, obtain the displacement of described (a) and the relation of the displacement of described (b).
6. the measuring space method described in claim 3, wherein,
Obtain described interval to refer to:
Described crystal seed is when arbitrary described height and position z, and the position of described real image lower extreme point when described height and position z is substituted into described real image regression equation is designated as Preal, the position of described mirror point when described height and position z is substituted into described mirror image regression equation is designated as Pmirror, with Δ Lp=(Preal-Pmirror) obtain distance, delta L of described real image lower extreme point based on described positional information and described mirror pointp；
To described real image regression equation, with the displacement Δ L with described real image lower extreme point based on described positional informationpThe form of the displacement of the height and position of the described crystal seed corresponding to/2, obtains the described crystal seed described raw material molten solution liquid level when arbitrary described height and position z and the interval of described crystal seed lower end.
7. the pre-heating mean of crystal seed, the method is the ullage configuration crystal seed of the raw material molten solution used in the cultivation of monocrystalline, and the method preheating described crystal seed, and the method comprises following operation:
The operation at the interval of the liquid level of described raw material molten solution and the lower end of described crystal seed is measured according to the measuring space method according to any one of claim 1-6；
In order to eliminate the difference of described interval and the target interval measured in the operation of described measuring interval, make the operation that at least one party of described crystal seed and described crucible moves；With
After described mobile process, the operation that described crystal seed is preheated.
8. the manufacture method of monocrystalline, this manufacture method comprises following operation:
The operation that crystal seed is preheated by pre-heating mean according to claim 7；
After described preheating procedure, at least one party of described crystal seed and described crucible is made to move, the operation making described crystal seed and contacting with the described raw material molten solution being contained in described crucible；With
After described contact operation, make at least one party of described crystal seed and described crucible move, make the operation that monocrystalline grows in the lower end of described crystal seed.
CN201610106091.6A 2015-02-26 2016-02-26 Measuring space method, the pre-heating mean of crystal seed and the manufacturing method of monocrystalline of raw material molten solution liquid level and crystal seed lower end Active CN105926033B (en)

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