CN105926033B - Measuring space method, the pre-heating mean of crystal seed and the manufacturing method of monocrystalline of raw material molten solution liquid level and crystal seed lower end - Google Patents
Measuring space method, the pre-heating mean of crystal seed and the manufacturing method of monocrystalline of raw material molten solution liquid level and crystal seed lower end Download PDFInfo
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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Abstract
Measuring space method, its for contact in the lower end for making crystal seed with the raw material molten solution in crucible and the lower end of the crystal seed culture monocrystalline before, the method for measuring the interval of the liquid level of the raw material molten solution and the lower end for the crystal seed being configured above the raw material molten solution, wherein, optically, obtain the location information of real image lower extreme point and the location information of mirror point, the real image lower extreme point is the specified point of the crystal seed lower end, and the mirror point is to mirror the point corresponding with the real image lower extreme point in the mirror image of the crystal seed of the liquid level；In the point of the position consistency of the position and mirror point of the real image lower extreme point, it is divided into 0 between the liquid level of the raw material molten solution and the lower end of the crystal seed, so as to find out the interval of the lower end of the liquid level and crystal seed of the raw material molten solution.In this way, the interval of raw material molten solution liquid level and crystal seed can accurately be measured before crystal seed is contacted with raw material molten solution liquid level.
Description
Technical field
The present invention relates to the measurement sides of the liquid level of the raw material molten solution used in single crystal cultivation and the interval of crystal seed lower end
The manufacturing method of method, the pre-heating mean of crystal seed and monocrystalline.
Background technique
The manufacturing method of monocrystalline silicon has vertical pulling method (Czochralski method, hereinafter referred to as " CZ method ").In CZ method, firstly, right
In the silicon melt as raw material being contained in crucible, the crystal seed (seed) being made of monocrystalline silicon is configured above.Then, make
Crystal seed and silicon melt are close, after crystal seed contacts silicon melt, crystal seed are lifted upwards, thus makes monocrystalline silicon under crystal seed
Growth.Make crystal seed contact silicon melt when, crystal seed lower end and the temperature difference of silicon melt liquid level are big, then crystal seed due to thermal stress and
Highdensity dislocation occurs.
Dislocation can be reduced by necking down (Dash Necking) method.But dislocation can be remained in crystal with certain frequency
Center portion, although the frequency is lower (remaining dislocations are known as " shaft-like dislocation " below).In order to reduce the generation of the shaft-like dislocation
Frequency, it is necessary to reduce the dislocation density for carrying out the crystal before necking down.Therefore, when reduction crystal seed and silicon melt contact
The density of dislocation be effective.
For this purpose, it is preferred that the temperature of the crystal seed lower end before making to contact with silicon melt is as close possible to silicon melt liquid
The temperature in face.When crystal seed is configured at the top of silicon melt, crystal seed is heated due to the radiant heat from silicon melt.Cause
This, the temperature of crystal seed is that crystal seed is then higher closer to silicon melt.To in order to reduce crystal seed lower end and silicon melt liquid level
Temperature difference, it is effective that crystal seed is configured as close possible to silicon melt liquid level and is preheated.
Existing technical literature
Patent document
Patent document 1: Japanese Unexamined Patent Publication 2005-170773 bulletin.
Summary of the invention
Problems to be solved by the invention
But in the past, the interval (hereinafter referred to as " being spaced under crystal ") of silicon melt liquid level and crystal seed lower end failed accurately
Measurement, when preheating to crystal seed, operator adjusts height and position of the crystal seed relative to silicon melt liquid level by visual observation,
So that interval becomes target interval under crystal.Therefore, when preheating crystal seed, being actually spaced under crystal does not become accurately
Target interval.Also, the deviation of interval and target interval is different every time under crystal.Therewith, crystalline substance at the time of terminating preheating
Kind temperature is also different every time.As a result, the temperature and raw material of crystal seed lower end are molten when contacting crystal seed and raw material molten solution
The temperature difference for melting liquid liquid level may increase.At this point, may still remain shaft-like in crystal even if reducing dislocation by necking technique
Dislocation.
Moreover, because fail to be spaced under Accurate Determining crystal, if reduce target interval, such as be set as 3mm hereinafter, if
Crystal seed may surprisingly contact raw material molten solution.In this case, crystal seed is not fully warmed-up, in raw material molten solution liquid level and crystal seed
Crystal seed is contacted with raw material molten solution in the state that the temperature difference of lower end is big, therefore, dislocation may occur with high density in crystal seed.Its
As a result, a possibility that shaft-like dislocation remains in crystal increases.
Therefore, in order to inhibit position caused by generating the temperature difference because of raw material molten solution liquid level and crystal seed lower end in crystal seed
It is wrong, it is necessary to be spaced under Accurate Determining crystal.
It is disclosed in patent document 1 in the monocrystalline manufacture using CZ method, raw material molten solution is adjusted before single crystal cultivation
The device of the initial position of the up and down direction of liquid level.The device has detection from base position to the distance of raw material molten solution liquid level
Detection means.It is to be contacted by crystal seed with raw material molten solution to detect from base position to raw material but in the detection means
The distance of molten liquid liquid level.Therefore, before crystal seed is contacted with raw material molten solution, can not know between crystal seed and raw material molten solution
Every.
The present invention is formed for above-mentioned condition, its purpose is to provide: it can be contacted with raw material molten solution liquid level in crystal seed
Before, the method at the interval of Accurate Determining raw material molten solution liquid level and crystal seed lower end.
Another object of the present invention is to provide the pre-heating mean of the reproducibility of the seeding temperature after preheating can be improved.
Another object of the present invention is to provide the manufacturing method that can inhibit the monocrystalline of importing of dislocation.
Solve the scheme of project
Purport of the invention is: the measuring method at the raw material molten solution liquid level of following (1) and the interval of crystal seed lower end, following
(2) manufacturing method of the pre-heating mean of crystal seed and the monocrystalline of following (3).
(1) measuring space method, for contacted in the lower end for making crystal seed with the raw material molten solution in crucible and in the crystalline substance
Before the lower end culture monocrystalline of kind, the liquid level of the raw material molten solution and the crystal seed being configured above the raw material molten solution are measured
Lower end interval method, wherein
Optically, the location information of real image lower extreme point and the location information of mirror point, the real image lower end are obtained
Point be the crystal seed lower end specified point, the mirror point be mirror in the mirror image of the crystal seed of the liquid level with the reality
As the corresponding point of lower extreme point；
In the point of the position consistency of the position and mirror point of the real image lower extreme point, the liquid level of the raw material molten solution
It is divided into 0 between the lower end of the crystal seed, so as to find out the interval of the lower end of the liquid level and crystal seed of the raw material molten solution.
(2) pre-heating mean of crystal seed, this method are that the ullage of the raw material molten solution used in the culture of monocrystalline is matched
Crystal seed is set, and to the method that the crystal seed is preheated, this method is included the following process:
It is measured according to the measuring space method of above-mentioned (1) between the liquid level of the raw material molten solution and the lower end of the crystal seed
Every process；
In order to eliminate the difference at the interval and target interval that measure in the process of the measuring interval, make the crystal seed
The mobile process at least one party of the crucible；With
After the mobile process, process that the crystal seed is preheated.
(3) manufacturing method of monocrystalline, the manufacturing method include the following process:
The process that crystal seed is preheated according to pre-heating mean described in above-mentioned (2)；
After the preheating procedure, keep at least one party of the crystal seed and the crucible mobile, makes the crystal seed and accommodate
In the process of the raw material molten solution contact in the crucible；With
After the Contact operation, keeps at least one party of the crystal seed and the crucible mobile, make monocrystalline in the crystal seed
Lower end growth process.
Invention effect
Measuring space method through the invention can accurately measure before crystal seed is contacted with raw material molten solution liquid level
The interval of raw material molten solution liquid level and crystal seed lower end.Moreover, pre-heating mean through the invention, can be improved crystal seed temperature after preheating
The reproducibility of degree.The manufacturing method of monocrystalline through the invention can inhibit the importing of dislocation.
Detailed description of the invention
Figure 1A is the configuration for schematically showing raw material molten solution and crystal seed when implementing measuring space method of the invention
Figure, indicate the state that separates with molten liquid liquid level of crystal seed.
Figure 1B is the figure for schematically showing the state that crystal seed lower end is contacted with molten liquid liquid level.
Fig. 2 is to schematically show from oblique upper to shoot the image that raw material molten solution and crystal seed shown in figure 1A obtain
Figure.
Specific embodiment
Embodiment of the present invention is described in detail referring to the drawings.
Figure 1A is the configuration for schematically showing raw material molten solution and crystal seed when implementing measuring space method of the invention
Figure, indicate the state that separates with raw material molten solution liquid level of crystal seed lower end.Figure 1B is to schematically show crystal seed lower end and raw material
The figure of the state of the liquid level contact of molten liquid.Fig. 2 is to schematically show from oblique upper to shoot raw material molten solution shown in figure 1A
The figure of the image obtained with crystal seed.
Raw material molten solution 1 is contained in the crucible 4 having in pulling apparatus.The top of raw material molten solution 1 configures crystal seed 2.
Such as when cultivating monocrystalline silicon, raw material molten solution 1 is made of the molten liquid of silicon, crystal seed 2 is made of the monocrystalline of silicon.
Pulling apparatus has camera 7.Camera 7 for example can be set to CCD camera.Include by the shooting of camera 7
The real image 2R of crystal seed 2 and mirror the range (referring to Fig. 2) in the mirror image 2M of the crystal seed 2 of the liquid level 1a of raw material molten solution 1.By this
Shooting, can obtain the location information of the real image 2R of crystal seed 2, mirror in the mirror image 2M of the crystal seed 2 of the liquid level 1a of raw material molten solution 1
Location information.
Crystal seed 2 is connect with lifting shafts 6 such as wires.The driving device 5 that pulling apparatus has is connected in lifting shaft 6.It is logical
Over-driving device 5 can move along the vertical direction crystal seed 2 via lifting shaft 6.It is possible thereby to which crystal seed 2 and crucible 4 is made to approach and divide
From.Base of the crystal seed 2 relative to pulling apparatus can be detected according to the drive volume (including the case where drive volume is 0) of driving device 5
The height and position that level is set.
In the present embodiment, crucible 4 is set as not moving along the vertical direction relative to the base position of pulling apparatus substantially
It is dynamic.Therefore, the height and position of the crystal seed 2 detected by driving device 5 corresponds to the crystalline substance on the basis of the height and position of crucible 4
The height and position of kind 2.Here, " height and position of the crystal seed 2 on the basis of the height and position of crucible 4 " is (hereinafter also referred to as " brilliant
The height and position of kind 2 ") it can be not necessarily crucible 4 and the interval of crystal seed 2 in the up-down direction, such as can have with the interval
There is certain difference.
In the present embodiment, the lower end 2L of crystal seed 2 is that the lower surface of crystal seed 2 is whole.In the following description, in image 3
On, the specified point of the lower end 2L of real image 2R is known as " real image lower extreme point " P1, in the upper end 2U (mirror image of lower end 2L) of mirror image 2M
In, point corresponding with real image lower extreme point P1 is referred to as " mirror point " P2.In image 3, real image lower extreme point P1 can be on the 2L of lower end
Any selection.
In the interval L of the lower end 2L for the liquid level 1a and crystal seed 2 for measuring raw material molten solution 1, made first by driving device 5
Crystal seed 2 moves along the vertical direction, simultaneously for multiple height and positions of crystal seed 2, is obtained by camera 7 contain real image 2R respectively
With the image 3 of mirror image 2M.
Then, for each gained image 3, position and mirror point P2 of the real image lower extreme point P1 on image 3 are found out in image
Position on 3.In this way, the location information of real image lower extreme point P1 and the location information of mirror point P2 can be obtained optically.
About the position of the real image lower extreme point P1 on image 3 and the position of mirror point P2, only measure upper with pulling apparatus
Under the position in direction corresponding to (vertical) direction provided when image 3 is digital form with pixel unit.As shown in Figure 1A, brilliant
The real image 2R of kind 2 and the mirror image 2M of crystal seed 2 are positioned essentially at symmetrical position relative to the liquid level 1a of raw material molten solution 1, equally,
Real image 2R ' and mirror image 2M ' after crystal seed 2 is mobile are positioned essentially at symmetrical position relative to liquid level 1a.
Then, according to the data obtained, the position z of real image lower extreme point P1 on the height and position z and image 3 of crystal seed 2 is found outp1's
The height and position z of regression equation (hereinafter referred to as " real image regression equation ") and crystal seed 2 and mirror point P2 on image 3
Position zp2Regression equation (hereinafter referred to as " mirror image regression equation ").Specifically, it is returned according to primary, real image recurrence side
Formula is represented by zp1=a1×z+b1, mirror image regression equation is represented by zp2=a2×z+b2(a1、b1、a2And b2For constant).
In mirror image 2M, due to liquid level 1a fluctuating and fluctuate, the position of the mirror point P2 on image 3 includes should
The influence of fluctuation.For the regression equation that the influence for fluctuating mirror image regression equation is reduced, different height can be increased
The shooting number for spending the crystal seed 2 of position or identical height and position measures the position of the mirror point P2 on image 3 to each image of gained 3
It sets, increases measurement number.For this purpose, the measurement number is preferably tens of points or more, such as 40 points or more.
Then, when crystal seed 2 is located at arbitrary height position z, with Δ Lp=(Preal-Pmirror) find out real image lower end on image 3
The distance, delta L of point P1 and mirror point P2p。
Preal: position of the real image lower extreme point P1 on image 3 when height and position z is substituted into real image regression equation.That is,
Preal=zp1=a1×z+b1。
Pmirror: position of the mirror point P2 on image 3 when height and position z is substituted into mirror image regression equation.That is, Pmirror
=zp2=a2×z+b2。
Therefore, it is represented by
ΔLp=(a1-a2)×z+(b1-b2) (A)
Distance, delta LpCan be described as: based on using optical means obtain location information, on the basis of the position of mirror image 2M
Real image 2R relative position.
If the distance, delta L on the displacement Δ z of the height and position z of crystal seed 2 and image 3pIt is corresponding, then according to above formula (A),
There is Δ Lp =(a1-a2)×Δz.Therefore, Δ z=Δ Lp/(a1-a2)。
That is, real image lower extreme point P1 is Δ L at a distance from mirror point P2pWhen, if the height and position of crystal seed 2 is only reduced Δ
Z, then real image lower extreme point P1 reduces Δ L at a distance from mirror point P2pAmount (Δ Lp=0), the lower end 2L and raw material molten solution of crystal seed 2
1 liquid level 1a contact.Therefore, before mobile crystal seed 2, the interval L of the lower end 2L of the liquid level 1a and crystal seed 2 of raw material molten solution 1
It can be described as Δ Lp/(a1-a2).This is indicated, according to real image regression equation and mirror image regression equation, real image lower extreme point P1's
The point of the position consistency of position and mirror point P2, i.e. crystal seed 2 are located at and meet zp1=zp2Height and position z when, raw material molten solution 1
0 (B referring to Fig.1) is divided between liquid level 1a and the lower end 2L of crystal seed 2, so as to find out interval L.
In addition, the movement of real image and the movement of mirror image usually have symmetry, therefore a can be set as1=-a2.Accordingly it is also possible to
Without using the mirror image regression equation for being easy to be influenced by the fluctuating of liquid level, interval L is set as Δ Lp/ (2a1)。
According to above method, the subjectivity of operator can be excluded, in lower end 2L and the raw material molten solution 1 of crystal seed 2
Before liquid level 1a contact, the interval L of the liquid level 1a of raw material molten solution 1 and the lower end 2L of crystal seed 2 are accurately measured.
When crystal seed 2 is preheated, under the liquid level 1a and crystal seed 2 that measure raw material molten solution 1 according to the above method first
Hold the interval L of 2L.Then for the interval of the liquid level 1a of raw material molten solution 1 and the lower end 2L of crystal seed 2, made by driving device 5
The direction of crystal seed 2 towards the difference for eliminating measured interval L and target interval is mobile, and only mobile and difference a considerable amount.
The interval of the lower end 2L of the liquid level 1a and crystal seed 2 of raw material molten solution 1 essentially becomes target interval as a result,.
Then, which is kept for such as several minutes.As a result, crystal seed 2 receive the radiant heat from raw material molten solution 1 and by
Preheating.Each crystal seed 2 can preheat at a prescribed interval from the liquid level 1a of raw material molten solution 1, it is possible thereby to brilliant after improving preheating
The reproducibility of 2 temperature of kind.In addition, can sufficiently reduce the lower end 2L's of crystal seed 2 if target interval is set as sufficiently small
The temperature difference of the liquid level 1a of temperature and raw material molten solution 1 can reduce thermal shock when lower end 2L and liquid level 1a is contacted.Thus
Dislocation can be inhibited to import in crystal seed 2.
Moreover, the interval of liquid level 1a Yu lower end 2L accurately can be measured, it is possible thereby to avoid crystal seed 2 unexpected and raw material melting
The case where liquid 1 contacts.Such as when preheating to crystal seed 2, the liquid level 1a of raw material molten solution 1 is adjusted by visual observation in operator
In the previous method at the interval of the lower end 2L of crystal seed 2, when small for the interval of target, such as when being set as 3mm or less,
Crystal seed 2 unexpected may be contacted with raw material molten solution 1.But according to the present invention, though the interval is set as such as 3mm hereinafter,
Crystal seed 2 can also be preheated, without making it contact raw material molten solution 1.
But the liquid level 1a of raw material molten solution 1 has fluctuating sometimes, it is therefore desirable to the fluctuating is considered, by liquid level 1a and lower end 2L
Target interval be set as contacting crystal seed 2 with raw material molten solution 1.The preferred 1mm or more of target interval.
After preheating by above method to crystal seed 2, decline crystal seed 2, makes crystal seed 2 and be contained in crucible 4
Raw material molten solution 1 contacts, and then rises crystal seed 2, grows monocrystalline in the lower end of crystal seed, thus can manufacture monocrystalline.
In embodiments above, crucible 4 is set as not moving along the vertical direction relative to the base position of pulling apparatus, but
It can be crucible 4 and pass through the composition that driving device can move along the vertical direction.It in this case, can be according to the drive of the driving device
Momentum detects height and position of the crucible 4 relative to the base position of pulling apparatus.Then, in this case, with the height of crucible 4
The height and position of crystal seed 2 on the basis of degree position for example can be set to: the crucible 4 detected according to the drive volume of driving device
The difference of the height and position of height and position and the crystal seed 2 detected according to the drive volume of driving device 5.
Crystal seed 2 can also be the composition that the base position relative to pulling apparatus is not moved along the vertical direction.This feelings
Under condition, the height and position of the crystal seed 2 on the basis of the height and position of crucible 4 for example can be set to be detected according to driving device
The height and position of crucible 4.
In the case that crucible 4 can move along the vertical direction, when being preheated to crystal seed 2, in order to eliminate measured interval L with
The difference of target interval other than keeping crystal seed 2 mobile along the vertical direction, or replaces moving crystal seed 2 along the vertical direction, can be with
Move crucible 4 along the vertical direction.
In addition, in the case that crucible 4 can move along the vertical direction, when manufacturing monocrystalline, in addition to making crystal seed 2 along the vertical direction
It except movement, or replaces moving crystal seed 2 along the vertical direction, crucible 4 can be made to move along the vertical direction, thus make crystal seed 2
It is contacted with raw material molten solution 1, grows monocrystalline under crystal seed 2.
It is not limited to be formed by silicon as the raw material molten solution of object 1 and crystal seed 2 in the present invention, as long as the mirror image of crystal seed 2
2M mirrors the liquid level 1a in raw material molten solution 1, can be by other materials such as germanium, Al2O3(sapphire) or compound are partly led
Body material is formed.
Symbol description
1: raw material molten solution, 1a: the liquid level of raw material molten solution, 2: crystal seed, 2R: real image, the 2M: the mirror image of crystal seed of crystal seed,
2L: the lower end of crystal seed, 3: image, 4: crucible, P1: real image lower extreme point, P2: mirror point.
Claims (3)
1. measuring space method, for contacted in the lower end for making crystal seed with the raw material molten solution in crucible and under the crystal seed
Before end culture monocrystalline, the liquid level of the raw material molten solution and the lower end for the crystal seed being configured above the raw material molten solution are measured
Interval method, wherein
Optically, the location information of real image lower extreme point and the location information of mirror point are obtained, the real image lower extreme point is
The specified point of the crystal seed lower end, the mirror point are mirrored in the mirror image of the crystal seed of the liquid level and under the real image
The corresponding point of endpoint,
In the point of the position consistency of the position and mirror point of the real image lower extreme point, the liquid level of the raw material molten solution and institute
It states and is divided into 0 between the lower end of crystal seed, so as to find out the interval of the lower end of the liquid level and crystal seed of the raw material molten solution,
When at least one party of the liquid level of the raw material molten solution in the crystal seed and the crucible has multiple height and positions, to each
Height and position optically finds out the location information of the real image lower extreme point and the location information of the mirror point,
Based on following displacement (a) and (b), find out between the liquid level of the raw material molten solution and the lower end of the crystal seed
Every:
(a) the height position of the crystal seed found out on the basis of the liquid level position of the raw material molten solution in the crucible
The displacement set,
(b) changed, with the crystal seed based on the location information the mirror image corresponding with the displacement of (a)
Position on the basis of the real image relative position displacement,
On the basis of the height and position of the crucible for accommodating the raw material molten solution, when the crystal seed has multiple height and positions,
The crystal seed and the liquid level are shot to each height and position, obtain the figure of the real image containing the crystal seed and the mirror image
Picture finds out the location information of the real image lower extreme point of the crystal seed and institute's rheme of the mirror point on the image
Confidence breath,
By regression equation, that is, real image regression equation of the position of the height and position and real image lower extreme point of the crystal seed
Regression equation, that is, mirror image regression equation of the position of the height and position and the mirror point of formula and the crystal seed,
The relationship of the displacement of (a) and the displacement of (b) is found out,
The interval is found out to refer to:
The crystal seed is in the arbitrary height and position z, when the height and position z is substituted into the real image regression equation
The position of the real image lower extreme point is denoted as Preal, the height and position z is substituted into the mirror when mirror image regression equation
The position of picture point is denoted as Pmirror, with Δ Lp=(Preal-Pmirror) find out the real image lower extreme point based on the location information with
The distance, delta L of the mirror pointp,
To the real image regression equation, with the displacement Δ L with the real image lower extreme point based on the location informationp/ 2 institutes
The form of the displacement of the height and position of the corresponding crystal seed finds out the crystal seed in the arbitrary height and position z
The interval of the raw material molten solution liquid level and the crystal seed lower end.
2. the pre-heating mean of crystal seed, this method is that the ullage configuration of the raw material molten solution used in the culture of monocrystalline is brilliant
Kind, and to the method that the crystal seed is preheated, this method includes the following process:
Measuring space method according to claim 1 measures the liquid level of the raw material molten solution and the lower end of the crystal seed
The process at interval；
In order to eliminate the difference at the interval and target interval that measure in the process of the measuring interval, make the crystal seed and institute
State the mobile process of at least one party of crucible；With
After the mobile process, process that the crystal seed is preheated.
3. the manufacturing method of monocrystalline, which is included the following process:
The process that pre-heating mean according to claim 2 preheats crystal seed；
After the preheating procedure, keeps at least one party of the crystal seed and the crucible mobile, make the crystal seed and be contained in institute
The process for stating the raw material molten solution contact in crucible；With
After the Contact operation, keeps at least one party of the crystal seed and the crucible mobile, make monocrystalline under the crystal seed
The process for holding growth.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015036233A JP6428372B2 (en) | 2015-02-26 | 2015-02-26 | Method for measuring distance between raw material melt surface and lower end of seed crystal, method for preheating seed crystal, and method for producing single crystal |
| JP2015-036233 | 2015-02-26 |
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| Publication Number | Publication Date |
|---|---|
| CN105926033A CN105926033A (en) | 2016-09-07 |
| CN105926033B true CN105926033B (en) | 2019-02-05 |
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| CN201610106091.6A Active CN105926033B (en) | 2015-02-26 | 2016-02-26 | Measuring space method, the pre-heating mean of crystal seed and the manufacturing method of monocrystalline of raw material molten solution liquid level and crystal seed lower end |
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| JP (1) | JP6428372B2 (en) |
| CN (1) | CN105926033B (en) |
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| JP6939714B2 (en) * | 2018-06-11 | 2021-09-22 | 株式会社Sumco | Method for measuring the distance between the melt surface and the seed crystal, method for preheating the seed crystal, and method for producing a single crystal |
| WO2022075061A1 (en) | 2020-10-07 | 2022-04-14 | 株式会社Sumco | Method for producing single crystals |
| JP2023038005A (en) * | 2021-09-06 | 2023-03-16 | 株式会社Sumco | Manufacturing method of single crystal and single crystal manufacturing apparatus |
| CN116732604A (en) | 2022-06-01 | 2023-09-12 | 四川晶科能源有限公司 | Single crystal pulling method and single crystal pulling equipment |
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| CN1147570A (en) * | 1995-06-02 | 1997-04-16 | Memc电子材料有限公司 | System and method for controlling growth of silicon crystal |
| CN1272147A (en) * | 1997-09-30 | 2000-11-01 | Memc电子材料有限公司 | method and system for controlling growth of silicon crystal |
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| Publication number | Publication date |
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| JP6428372B2 (en) | 2018-11-28 |
| JP2016155729A (en) | 2016-09-01 |
| TW201702438A (en) | 2017-01-16 |
| CN105926033A (en) | 2016-09-07 |
| TWI596242B (en) | 2017-08-21 |
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