CN105925959B - 一种复合型ald导气装置 - Google Patents

一种复合型ald导气装置 Download PDF

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CN105925959B
CN105925959B CN201610314085.XA CN201610314085A CN105925959B CN 105925959 B CN105925959 B CN 105925959B CN 201610314085 A CN201610314085 A CN 201610314085A CN 105925959 B CN105925959 B CN 105925959B
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air guide
circular arc
operated devices
aspirating hole
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CN105925959A (zh
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何丹农
尹桂林
金彩虹
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Shanghai National Engineering Research Center for Nanotechnology Co Ltd
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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523Pulsed gas flow or change of composition over time
    • C23C16/45525Atomic layer deposition [ALD]
    • C23C16/45544Atomic layer deposition [ALD] characterized by the apparatus

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
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  • Mechanical Engineering (AREA)
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  • Organic Chemistry (AREA)
  • Aerodynamic Tests, Hydrodynamic Tests, Wind Tunnels, And Water Tanks (AREA)
  • Testing Resistance To Weather, Investigating Materials By Mechanical Methods (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

本发明公开了一种复合型的ALD导气装置,其包括平面台阶(1)和圆弧壁(2)组成的主体结构、导气孔阵列(3)以及抽气孔(4)。本发明通过对反应腔体抽气进行导气,改善反应腔气流分布,能够有效提升制备薄膜的均匀性;同时,利用复合结构,大幅度的节约了空间,在承载了导气功能的同时,也可作为腔体内样品架的支撑机构,实现了功能的复合化。

Description

一种复合型ALD导气装置
发明领域
本发明涉及一种ALD(原子层沉积)系统中,用于反应腔体内气体导流的装置。
背景技术
根据ALD的反应原理,在现有技术中,ALD前驱体经管路系统进入反应腔体,在有限的时间内与腔体内基底表面发生吸附,连续的两种不同气体在基底表面发生反应,从而导致一个原子层的沉积。为了在有限的时间内,确保反应前驱体能够与墙体内的基底发生充分的均匀的吸附,一般都会对反应腔体结构以及进气喷嘴进行设计,以优化腔内气流分布。但是,对于结构较为复杂的反应腔体或者尺寸较大的反应腔体,仅仅只是对喷嘴或者腔体结构进行有限的设计,是不够的,还需要对抽气部分进行优化设计,才能进一步提升气流均匀性,提升所制备的薄膜的均匀性。
发明内容
为克服现有技术的不足,本发明提出一种复合型的ALD导气装置,通过对抽气的气流分布进行调节,能够有效优化反应腔体内气流分布,解决腔体内因气流不均导致的制备薄膜不均的现象。
一种复合型的ALD导气装置,其特征在于,其包括平面台阶(1)和圆弧壁(2)组成的主体结构、导气孔阵列(3)以及抽气孔(4)。
其平面台阶(1),中间部分用于布置导气孔,两边平台用于腔体内安装样品架。
其圆弧壁(2),其弧度与反应腔弧度相同,便于安装于反应腔内壁。
其导气孔阵列(3),孔沿着垂直方向贯穿,孔径为1-3mm,呈矩形均匀分布,孔间距为10mm-50mm,与装置内部以及抽气孔连通,用于气体抽气过程中的导流,优化腔体气流分布。
其抽气孔(4),与真空抽气管路相连,用于抽气,直径为30mm-50mm。
本发明提出一种复合型的ALD导气装置,其包括平面台阶和圆弧壁组成的主体结构、导气孔阵列以及抽气孔。
所述的平面台阶,中间部分用于布置导气孔,两边平台用于腔体内安装样品架;
所述的圆弧壁,其弧度与反应腔弧度相同,便于安装于反应腔内壁;
所述的导气孔阵列,孔沿着垂直方向贯穿,呈矩形均匀分布,与装置内部以及抽气孔连通,用于气体抽气过程中的导流,优化腔体气流分布;
所述的抽气孔,与真空抽气管路相连,用于抽气。
本发明具有如下优点:
1、本发明通过对反应腔体抽气进行导气,改善反应腔气流分布,能够有效提升制备薄膜的均匀性;
2、本发明,利用复合结构,大幅度的节约了空间,在承载了导气功能的同时,也可作为腔体内样品架的支撑机构,实现了功能的复合化。
附图说明
下面结合附图和实施例对本发明作出详细的说明,其中:
图1为本发明较佳实施例的剖视图;
图2位本发明较佳实施例的俯视图。
具体实施方式
如图1、与2 所示,为本发明较佳实施例的结构示意图,所述的一种复合型的ALD导气装置,其包括平面台阶(1)和圆弧壁(2)组成的主体结构、导气孔阵列(3)以及抽气孔(4)。平面台阶(1),中间部分用于布置导气孔,两边平台用于腔体内安装样品架;圆弧壁(2),其弧度与反应腔弧度相同,便于安装于反应腔内壁;导气孔阵列(3),孔沿着垂直方向贯穿,孔径为1-3mm,呈矩形均匀分布,孔间距为10mm~50mm,与装置内部以及抽气孔连通,用于气体抽气过程中的导流,优化腔体气流分布;抽气孔(4),与真空抽气管路相连,用于抽气,直径为30mm~50mm。本实施例中,导气孔阵列(3),孔径为2mm,孔间距为25mm;抽气孔(4),直径为40mm。根据需要,孔径还可以取1mm,3mm,孔间距可以为10mm,20mm,30mm,40mm或者50mm。

Claims (1)

1.一种复合型的ALD导气装置,其特征在于,其包括平面台阶(1)和圆弧壁(2)组成的主体结构、导气孔阵列(3)以及抽气孔(4);
其平面台阶(1),中间部分用于布置导气孔,两边平台用于腔体内安装样品架;
其圆弧壁(2),其弧度与反应腔弧度相同,便于安装于反应腔内壁;
其导气孔阵列(3),孔沿着垂直方向贯穿,孔径为1-3mm,呈矩形均匀分布,孔间距为10mm-50mm,与装置内部以及抽气孔连通,用于气体抽气过程中的导流,优化腔体气流分布;
其抽气孔(4),与真空抽气管路相连,用于抽气,直径为30mm-50mm。
CN201610314085.XA 2016-05-13 2016-05-13 一种复合型ald导气装置 Active CN105925959B (zh)

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN201762441U (zh) * 2010-09-13 2011-03-16 宁波升日太阳能电源有限公司 一种等离子体增强化学气相沉积炉
CN201873751U (zh) * 2010-11-26 2011-06-22 英作纳米科技(北京)有限公司 制备多孔材料内壁薄膜的原子层沉积设备
CN102400110A (zh) * 2011-12-06 2012-04-04 刘汝强 一种气相沉积用导流防尘控气盘及气相沉积炉内洁净生产的方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5886366B2 (ja) * 2014-06-04 2016-03-16 株式会社日立国際電気 半導体装置の製造方法、基板処理装置、プログラムおよび記録媒体

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN201762441U (zh) * 2010-09-13 2011-03-16 宁波升日太阳能电源有限公司 一种等离子体增强化学气相沉积炉
CN201873751U (zh) * 2010-11-26 2011-06-22 英作纳米科技(北京)有限公司 制备多孔材料内壁薄膜的原子层沉积设备
CN102400110A (zh) * 2011-12-06 2012-04-04 刘汝强 一种气相沉积用导流防尘控气盘及气相沉积炉内洁净生产的方法

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