CN105917576A - 一种射频电路、发射机、基站与用户终端 - Google Patents

一种射频电路、发射机、基站与用户终端 Download PDF

Info

Publication number
CN105917576A
CN105917576A CN201480027154.8A CN201480027154A CN105917576A CN 105917576 A CN105917576 A CN 105917576A CN 201480027154 A CN201480027154 A CN 201480027154A CN 105917576 A CN105917576 A CN 105917576A
Authority
CN
China
Prior art keywords
signal
power amplifier
circuit
phase
auxiliary power
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201480027154.8A
Other languages
English (en)
Other versions
CN105917576B (zh
Inventor
王亮芳
武胜波
吴成林
黄伟
冯祥
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Huawei Technologies Co Ltd
Original Assignee
Huawei Technologies Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Huawei Technologies Co Ltd filed Critical Huawei Technologies Co Ltd
Priority to CN201811582628.1A priority Critical patent/CN109768776B/zh
Publication of CN105917576A publication Critical patent/CN105917576A/zh
Application granted granted Critical
Publication of CN105917576B publication Critical patent/CN105917576B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0294—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers using vector summing of two or more constant amplitude phase-modulated signals
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0288—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers using a main and one or several auxiliary peaking amplifiers whereby the load is connected to the main amplifier using an impedance inverter, e.g. Doherty amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/211—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
    • H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/60—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
    • H03F3/602—Combinations of several amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/204—A hybrid coupler being used at the output of an amplifier circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04W—WIRELESS COMMUNICATION NETWORKS
    • H04W52/00—Power management, e.g. TPC [Transmission Power Control], power saving or power classes
    • H04W52/02—Power saving arrangements
    • H04W52/0209—Power saving arrangements in terminal devices
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04W—WIRELESS COMMUNICATION NETWORKS
    • H04W52/00—Power management, e.g. TPC [Transmission Power Control], power saving or power classes
    • H04W52/04—TPC
    • H04W52/06—TPC algorithms
    • H04W52/08—Closed loop power control
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
    • Y02D30/00—Reducing energy consumption in communication networks
    • Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)

Abstract

本发明实施例提供了一种射频电路，包括：第一电路，所述第一电路用于：接收第一信号与第二信号；将所述第一信号分路为第三信号与第四信号，将所述第二信号分路为第五信号与第六信号；调节所述第五信号的相位，得到第七信号；将所述第七信号与所述第三信号合路为第八信号；第二电路，所述第二电路包括主功放支路与辅功放支路，所述主功放支路包括异相电路，所述辅功放支路包括辅功放，所述主功放支路用于对所述第四信号与所述第六信号进行处理，所述辅功放支路用于对所述第八信号进行处理。本发明实施例提供的射频电路中，第二电路能够在额定功率下达到最高效率，能够满足实际应用的要求。

Description

PCT国内申请，说明书已公开。

Claims (8)

  1. PCT国内申请，权利要求书已公开。
CN201480027154.8A 2014-12-11 2014-12-11 一种射频电路、发射机、基站与用户终端 Active CN105917576B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201811582628.1A CN109768776B (zh) 2014-12-11 2014-12-11 一种射频电路、发射机、基站与用户终端

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/CN2014/093559 WO2016090592A1 (zh) 2014-12-11 2014-12-11 一种射频电路、发射机、基站与用户终端

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN201811582628.1A Division CN109768776B (zh) 2014-12-11 2014-12-11 一种射频电路、发射机、基站与用户终端

Publications (2)

Publication Number Publication Date
CN105917576A true CN105917576A (zh) 2016-08-31
CN105917576B CN105917576B (zh) 2019-01-15

Family

ID=56106461

Family Applications (2)

Application Number Title Priority Date Filing Date
CN201811582628.1A Active CN109768776B (zh) 2014-12-11 2014-12-11 一种射频电路、发射机、基站与用户终端
CN201480027154.8A Active CN105917576B (zh) 2014-12-11 2014-12-11 一种射频电路、发射机、基站与用户终端

Family Applications Before (1)

Application Number Title Priority Date Filing Date
CN201811582628.1A Active CN109768776B (zh) 2014-12-11 2014-12-11 一种射频电路、发射机、基站与用户终端

Country Status (7)

Country Link
US (2) US9985585B2 (zh)
EP (2) EP3220543B1 (zh)
JP (1) JP6482668B2 (zh)
KR (1) KR101936665B1 (zh)
CN (2) CN109768776B (zh)
CA (1) CA2970051C (zh)
WO (1) WO2016090592A1 (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BR112018012904B1 (pt) * 2015-12-24 2023-12-19 Huawei Technologies Co., Ltd Método e aparelho de controle de amplificador de potência, sistema de controle de amplificador de potência e mídia de armazenamento legível por computador

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1714500A (zh) * 2002-12-19 2005-12-28 艾利森电话股份有限公司 复合放大器结构
US20100045385A1 (en) * 2008-08-19 2010-02-25 Cree, Inc. Integrated circuit with parallel sets of transistor amplifiers having different turn on power levels
CN102130657A (zh) * 2010-09-14 2011-07-20 华为技术有限公司 一种功率放大器、不对称达赫笛功率放大设备和基站
CN102710220A (zh) * 2012-06-28 2012-10-03 武汉虹信通信技术有限责任公司 一种基于预失真和Doherty的前馈功率放大器
CN104167995A (zh) * 2013-05-15 2014-11-26 香港城市大学 功率放大器

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4605902A (en) * 1982-09-03 1986-08-12 Rockwell International Corporation Hybrid junction signal combiner
JP3629346B2 (ja) * 1996-12-25 2005-03-16 株式会社アドバンテスト 信号伝送方式及び伝送線路駆動回路
JP4467756B2 (ja) * 2000-10-13 2010-05-26 三菱電機株式会社 ドハティ型増幅器
US7071775B2 (en) * 2004-06-21 2006-07-04 Motorola, Inc. Method and apparatus for an enhanced efficiency power amplifier
EP2263332A2 (en) * 2008-03-12 2010-12-22 Hypres Inc. Digital radio-frequency tranceiver system and method
US8965454B2 (en) * 2009-03-04 2015-02-24 Andrew Llc Amplifier system for cell sites and other suitable applications
US8837629B2 (en) * 2011-05-11 2014-09-16 Fadhel M Ghannouchi Extended bandwidth digital Doherty transmitter
US9813036B2 (en) * 2011-12-16 2017-11-07 Qorvo Us, Inc. Dynamic loadline power amplifier with baseband linearization
US9444140B2 (en) * 2012-05-23 2016-09-13 Intel Corporation Multi-element antenna beam forming configurations for millimeter wave systems
CN102752011A (zh) * 2012-06-08 2012-10-24 陕西长岭电子科技有限责任公司 一种射频信号闭锁器及其实现方法
US8948306B2 (en) * 2013-01-11 2015-02-03 Gatesair, Inc. Broadband high efficiency amplifier system
US8779826B1 (en) * 2013-01-25 2014-07-15 Cambridge Silicon Radio Limited Power splitter and combiner
US9083294B2 (en) * 2013-03-13 2015-07-14 Futurewei Technologies, Inc. Apparatus and method for multilevel lossless outphasing power amplifier
WO2014151302A1 (en) * 2013-03-22 2014-09-25 Massachusetts Institute Of Technology Hardware-efficient compensator for outphasing power amplifiers
US9397617B2 (en) * 2013-06-25 2016-07-19 Rf Micro Devices, Inc. Multi-broadband Doherty power amplifier
EP3002873B1 (en) 2013-06-27 2017-12-27 Huawei Technologies Co., Ltd. Multiband power amplifier device
CN103675764B (zh) * 2013-11-22 2016-03-02 西安天和防务技术股份有限公司 一种全固态多路合成微波功率雷达发射机

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1714500A (zh) * 2002-12-19 2005-12-28 艾利森电话股份有限公司 复合放大器结构
US20100045385A1 (en) * 2008-08-19 2010-02-25 Cree, Inc. Integrated circuit with parallel sets of transistor amplifiers having different turn on power levels
CN102130657A (zh) * 2010-09-14 2011-07-20 华为技术有限公司 一种功率放大器、不对称达赫笛功率放大设备和基站
CN102710220A (zh) * 2012-06-28 2012-10-03 武汉虹信通信技术有限责任公司 一种基于预失真和Doherty的前馈功率放大器
CN104167995A (zh) * 2013-05-15 2014-11-26 香港城市大学 功率放大器

Also Published As

Publication number Publication date
US9985585B2 (en) 2018-05-29
EP3220543A1 (en) 2017-09-20
EP3553946B1 (en) 2021-04-07
EP3220543B1 (en) 2019-03-06
KR101936665B1 (ko) 2019-01-09
KR20170093207A (ko) 2017-08-14
JP6482668B2 (ja) 2019-03-13
CN109768776A (zh) 2019-05-17
CN109768776B (zh) 2021-12-31
EP3553946A1 (en) 2019-10-16
JP2017537563A (ja) 2017-12-14
WO2016090592A1 (zh) 2016-06-16
CA2970051C (en) 2019-05-07
CA2970051A1 (en) 2016-06-16
US20170279411A1 (en) 2017-09-28
US20180254744A1 (en) 2018-09-06
EP3220543A4 (en) 2017-12-06
US10483915B2 (en) 2019-11-19
CN105917576B (zh) 2019-01-15

Similar Documents

Publication Publication Date Title
JP6707642B2 (ja) 電力増幅装置、エンベロープ追跡型の増幅装置、および信号を増幅する方法
CN107210710B (zh) 三路顺序功率放大器
US8988147B2 (en) Multi-way Doherty amplifier
US9331638B2 (en) Doherty power amplifier apparatus
CN109889162B (zh) 一种自输入控制的负载调制类功率放大器及其实现方法
CN107231131B (zh) 一种可增大功率回退范围的多赫尔蒂功率放大器
WO2013099543A1 (ja) 高周波信号処理装置および無線通信装置
CN111740703B (zh) 伪Doherty式自输入控制的负载调制平衡类功率放大器及其实现方法
CN104393843A (zh) 采用多级式辅路放大器的Doherty功率放大器
US10084413B2 (en) Doherty power amplifier and transmitter
US20170163220A1 (en) Doherty amplifier
US11411540B2 (en) Power amplifier and radio frequency device comprising the same
US10224878B2 (en) Power amplification device
KR20170102169A (ko) 무선 주파수 전력 증폭기
CN105917576A (zh) 一种射频电路、发射机、基站与用户终端
US20130099867A1 (en) Apparatus for doherty power amplifier and method for power amplification
KR20220044824A (ko) 전력 증폭기
Setiawan et al. Design and simulation of front-end broadband RF power amplifier for LTE TDD 2.3 GHz
CN205657680U (zh) 可扩展输出功率动态范围的5.8GHz频段射频电路
JP6816179B2 (ja) 無線周波数回路、送信器、基地局、及びユーザ端末
Arabi et al. A comparison of lumped-based tunable matching networks for dynamically-load-modulated power amplifiers
Chao et al. Research on Power Amplifier Based on Envelope Tracking Technology

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant