CN105914253B - Polarize controllable nano light source and its microscopic system, photon chip system - Google Patents
Polarize controllable nano light source and its microscopic system, photon chip system Download PDFInfo
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- CN105914253B CN105914253B CN201610212532.0A CN201610212532A CN105914253B CN 105914253 B CN105914253 B CN 105914253B CN 201610212532 A CN201610212532 A CN 201610212532A CN 105914253 B CN105914253 B CN 105914253B
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- 230000010287 polarization Effects 0.000 claims abstract description 44
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 39
- 229910021389 graphene Inorganic materials 0.000 claims abstract description 37
- 239000004065 semiconductor Substances 0.000 claims abstract description 29
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 230000003287 optical effect Effects 0.000 claims abstract description 13
- 239000002356 single layer Substances 0.000 claims abstract description 13
- 239000013307 optical fiber Substances 0.000 claims abstract description 10
- 230000008859 change Effects 0.000 claims abstract description 4
- 239000010410 layer Substances 0.000 claims description 14
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 12
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 12
- 230000008878 coupling Effects 0.000 claims description 11
- 238000010168 coupling process Methods 0.000 claims description 11
- 238000005859 coupling reaction Methods 0.000 claims description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 9
- 238000001514 detection method Methods 0.000 claims description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 239000004411 aluminium Substances 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910017052 cobalt Inorganic materials 0.000 claims description 3
- 239000010941 cobalt Substances 0.000 claims description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229910052763 palladium Inorganic materials 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 238000001914 filtration Methods 0.000 claims description 2
- 239000002210 silicon-based material Substances 0.000 claims description 2
- 229910052738 indium Inorganic materials 0.000 claims 1
- 230000005540 biological transmission Effects 0.000 abstract description 5
- 230000033228 biological regulation Effects 0.000 abstract description 4
- 238000000034 method Methods 0.000 description 11
- 239000002127 nanobelt Substances 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 241000209094 Oryza Species 0.000 description 2
- 235000007164 Oryza sativa Nutrition 0.000 description 2
- 150000001336 alkenes Chemical class 0.000 description 2
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000004020 luminiscence type Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 235000009566 rice Nutrition 0.000 description 2
- 239000011149 active material Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000002164 ion-beam lithography Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
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- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/125—Composite devices with photosensitive elements and electroluminescent elements within one single body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
Abstract
Controllable nano light source, including substrate are polarized the invention discloses one kind；Single-layer graphene in substrate；It is separately positioned on first electrode and second electrode in graphene edge and substrate；It is placed on the semiconductor nano-strip on single-layer graphene；The optical fiber for exciting semiconductor nano-strip one end described in light irradiation is introduced, and optical signal is exported in the semiconductor nano-strip other end；And for change between first electrode and second electrode apply voltage with regulate and control output light polarization external signal source.The invention also discloses the microscopic system with above-mentioned polarization controllable nano light source, photon chip system.The present invention provides Miniaturizable, integrated polarization controllable nano light source, adjusts graphene fermi level by electric signal, changes its status of support to transmission light, so as to realize the regulation and control that polarization is exported to semiconductor nanometers light.
Description
Technical field
The present invention relates to micronano optical and integrated optics field, controllable nano light source is polarized and its aobvious more particularly, to one kind
Micro-system, photon chip system.
Background technology
As the development of microelectric technique progressively reaches its physics limit, photon technology turns into the new breakthrough of Information technology
Point.The miniaturization of photonic device and it is integrated be the current field important development direction.The miniaturization phase of passive photonic device
To maturation, and the miniaturization of active device especially light source with it is integrated be main bugbear, this also turns into the focus of international research
The problem of.Semiconductor nano-strip/line is a kind of very good nanometers light, and optic communication, super-resolution are micro-, highly sensitive on piece
Sensing and high score rate have important application in terms of showing.Although semiconductor nano-strip/line source is real by success in the world
It is existing, but it also has very big distance with practical application, and main restricting factor is that the characteristics of luminescence of these nanometers lights is difficult to regulate and control such as
Polarization, wavelength, pattern, intensity etc..
Graphene as a kind of New Two Dimensional material, can with traditional integrated circuit process compatible, and be easy to miniaturization.More
Importantly, the unique physical property of graphene allows it to support specific polarised light to be transmitted, to realize Polarization Control
There is provided new method.At present, using graphene realize Polarization Control patent and research report, but these methods be all by
Graphene is combined with waveguiding structure, changes the polarization state of transmission light in waveguide.And could not realize to the straight of light source luminescent polarization
Connect regulation and control.Meanwhile, these existing graphene wave-guide polarization control devices are both near infrared light (wavelength is more than 1000nm)
, the Polarization Control device also not used for visible ray, and these devices have important application in fields such as display, imaging, sensings.
If graphene can be used to realize that the direct regulation and control to the luminous polarization of visible light source will be helpful to the reality of Parameter adjustable nanometers light
It is existing and its miniaturization, integrated.
The content of the invention
It is an object of the invention to provide a kind of polarization controllable nano light source of use graphene direct regulation and control visible ray, profit
With applied electronic signal adjust graphene fermi level, change graphene to TE TM polarised lights status of support, finally realize nanometer
The luminous polarization of light source can switch between TE/TM two states.
The concrete technical scheme of the present invention is as follows：
One kind polarization controllable nano light source, including substrate and the single-layer graphene in substrate；It is separately positioned on graphite
First electrode and second electrode on alkene edge and substrate；It is placed on the semiconductor nano-strip on single-layer graphene；Introducing is excited
The optical fiber of semiconductor nano-strip one end described in light irradiation, and export optical signal in the semiconductor nano-strip other end；And use
Apply voltage between change first electrode and second electrode to regulate and control the external signal source of output light polarization.
In the present invention, single-layer graphene material is prepared using stripping method, and be transferred in substrate；In graphene edge and base
Depositing electrode is distinguished on bottom；Semiconductor nano-strip is prepared by chemical vapor deposition (CVD) method, received using micro-nano operation by single
Rice band is transferred to above-mentioned substrate, and is placed on single-layer graphene；Using optical fiber by external excitation light irradiation in semiconductor nano
Band one end；The luminous of the semiconductor nano-strip other end is used as polarised light.
In addition, in the polarization controllable nano light source of the present invention, due to semiconductor nano-strip itself banded structure feature, making
Its intrinsic luminous many presentation different polarization state.When system no applied voltage or voltage are not up to some strength, graphene takes
Rice energy level is near dirac point, only supports the transmission of TE polarised lights, and TM polarised lights are largely decayed, now nanobelt light source
It is luminous that TE polarizations are presented；When applying certain voltage between two electrodes, the fermi level of graphene is changed, and only supports TM polarizations
The transmission of light, TE polarised lights are largely decayed, and now TM polarizations are presented in nanobelt light source luminescent.It therefore, it can apply by changing
Alive size realizes the controllable nanometers light of polarization.
Wherein, described semiconductor nano carrying material is Group II-VI semiconductor material, and thickness is 80nm to 120nm, is lighted
Wavelength is in visible light wave range.
In the present invention, the light source of the exciting light can or pulse laser continuous for 355nm, 405nm, 532nm etc..
Described electrode is the conductive materials such as platinum, gold, silver, copper, aluminium, titanium, nickel, cobalt, palladium.
Described substrate is silicon oxide layer deposited or silicon nitride layer on silicon materials.
Further, polarization controllable nano light source of the present invention can be used based on microscopic system, can also be based on
Integrated photon chip is used, and is specifically included：
A kind of microscopic system with above-mentioned polarization controllable nano light source, with reference to described polarization controllable nano light source, also
Including：
Laser, sends the exciting light for being coupled into the optical fiber；
Microcobjective, for being collected to described output light；
Optical filter, the part exciting light being collected into for filtering.
In the microscopic system of the present invention, the output light of nanobelt is collected by microcobjective.
Wherein, described microscopic system also includes the analyzer being located on optical filter emitting light path and for polarization state inspection
The light detection device of survey, wherein light detection device can be spectrometer, light power meter or photo-detector etc..
A kind of photon chip system with above-mentioned polarization controllable nano light source, with reference to described polarization controllable nano light
Source, in addition to：Waveguide coupling grating or waveguide coupler, it is positioned at the end of the semiconductor nano-strip and described for transmitting
Output light；Passive photonic device, for the output light for receiving the waveguide coupling grating or waveguide coupler to transmit.
In integrated photon chip system in the present invention, pass through the mode such as waveguide coupling grating or the coupling of waveguide evanscent field
Semiconductor nano-strip output light is introduced into photonic device.
The present invention provides a kind of brand-new Miniaturizable, integrated polarization controllable nano light source, is adjusted by electric signal
Graphene fermi level, changes its status of support to transmission light, so as to realize the tune that polarization is exported to semiconductor nanometers light
Control.
Brief description of the drawings
Fig. 1 is the polarization controllable nano light source device schematic diagram designed by the present invention；Wherein, 1 is for introducing exciting light
Optical fiber, 2 be semiconductor nano-strip, and 3 be single-layer graphene, and 4 be silicon oxide layer deposited or silicon nitride layer, and 5 be silicon base, and 6 are
Electrode, 7 be the electrode on graphene, and 8 be that nanometers light exports optical signal, and 9 be external signal source；
Fig. 2 is the polarization controllable nano light source microscopic system figure designed by the present invention；Wherein, 10 be optical filter, and 11 be inspection
Inclined device, 12 be light detection device, and 13 be laser, and 14 be microcobjective.
Fig. 3 is the polarization controllable nano light source single-chip integration photon core coupled based on waveguide optical grating designed by the present invention
Piece；Wherein, 15 be silicon base, and 16 be the silicon nitride layer of deposition, and 17 be silicon nitride waveguides coupling grating, and 18 be passive photonic device
Part.
Fig. 4 is the polarization controllable nano light source single-chip integration photon core coupled based on evanscent field waveguide designed by the present invention
Piece；Wherein, 19 be silicon nitride waveguides coupler.
Embodiment
The polarization controllable nano light source of structure as shown in Figure 1, including for introducing the optical fiber 1 of exciting light, semiconductor nano
Electrode 7 on band 2, single-layer graphene 3, silicon oxide layer deposited or silicon nitride layer 4, silicon base 5, electrode 6, graphene, nanometer light
Source exports optical signal 8 and external signal source 9.
In the present embodiment, semiconductor nano-strip 2 is CdSe nanobelts, specifically using chemical vapor deposition (CVD) method in spy
CdSe nanobelts are grown under the conditions of constant temperature degree, air pressure, air-flow etc., and its optical property is characterized, are polarized as graphene
Control the active material of nanometers light.
Single-layer graphene is prepared using stripping method, and is transferred in the silicon base of deposition silica layer or silicon nitride layer；
Or directly grow single-layer graphene in the silicon base of deposition silica layer or silicon nitride layer using CVD method.
Using focused-ion-beam lithography (FIB) on graphene and the silicon layer of substrate depositing electrode or using micro-nano operate
Method prepares electrode with conductive silver paste.Electrode can be the conductive materials such as platinum, gold, silver, copper, aluminium, titanium, nickel, cobalt, palladium.By micro-
Single semiconductor nano-strip is transferred on single-layer graphene by operation of receiving.Operating process is it is ensured that nanobelt is excellent.
As shown in Fig. 2 being excited what laser 13 was sent optically coupling to optical fiber, and optical fiber output is adjusted by microscope equipment
Hot spot, make its irradiation in one end of nanobelt.
Semiconductor nano-strip exciting light irradiating luminescence, using high x Microscope Objective 14 (100 times or 50 times) in nanometer
The other end of band is collected detection to output light.Output light is after object lens, the portion for being collected into object lens by optical filter 10
Shunt excitation is luminous to be filtered, and enters the detection that light detection device 12 carries out polarization state by analyzer 11, or output light is introduced
External circuits system.Wherein light detection device can be spectrometer, light power meter or photo-detector etc..
In the present embodiment, electric signal is applied between the electrode of device two by outside source, regulates and controls Fermi's energy of graphene
Level.When signal source output voltage is 0 or less than particular voltage level VthWhen, graphene only supports TE polarised lights to propagate, now light source
Export TE polarised lights；When signal source output voltage is higher than particular voltage level VthWhen, graphene only supports TM polarised lights to propagate, now
Light source output TM polarised lights.By the voltage for changing external control signal, you can realize graphene Polarization Control nanometers light.
The polarization controllable nano light source of the present invention both can also be used as polarization laser light as polarized fluorescence light source
Source.This depends on the selection of exciting light.
The nanometers light of the present embodiment can realize integrated with photon chip, photon core of the selection based on silicon nitride material
Piece can be transmitted and handle to visible ray.As shown in Figure 3 and Figure 4, in photon chip, evanscent field coupling is carried out using waveguide
Close (silicon nitride waveguides coupler 19) or coupled by waveguide coupling grating (silicon nitride waveguides coupling grating 17), by graphite
Other passive photonic devices 18 (such as resonator, waveguide beam splitter) that alkene Polarization Control nanometers light output light is imported in chip
In.Meanwhile, photoelectricity integrated chip can be realized with reference to CMOS integrated circuit techniques, has important in visible light communication and display field
Application prospect.
The foregoing is only the preferable implementation example of the present invention, be not intended to limit the invention, it is all in spirit of the invention and
Within principle, any modification, equivalent substitution and improvements made etc. should be included in the scope of the protection.
Claims (6)
1. one kind polarization controllable nano light source, it is characterised in that including：
Substrate；
Single-layer graphene in substrate；
It is separately positioned on first electrode and second electrode in graphene edge and substrate；
It is placed on the semiconductor nano-strip on single-layer graphene；
The optical fiber for exciting semiconductor nano-strip one end described in light irradiation is introduced, and in the semiconductor nano-strip other end output light
Signal；
And for change between first electrode and second electrode apply voltage with regulate and control output light polarization external signal source.
2. controllable nano light source is polarized as claimed in claim 1, it is characterised in that described semiconductor nano-strip uses II-
VI races semi-conducting material, thickness is 80nm to 120nm.
3. as claimed in claim 1 polarization controllable nano light source, it is characterised in that the material of two electrodes be platinum, gold, silver,
Copper, aluminium, titanium, nickel, cobalt or palladium.
4. controllable nano light source is polarized as claimed in claim 1, it is characterised in that described substrate is deposition silica layer
Or the silicon materials of silicon nitride layer.
5. a kind of have the microscopic system that controllable nano light source is polarized as described in any one of Claims 1 to 4, it is characterised in that
Also include：
Laser, sends the exciting light for being coupled into the optical fiber；
Microcobjective, for being collected to described output light；
Optical filter, the part exciting light being collected into for filtering；
The light detection device detected with the analyzer on optical filter emitting light path and for polarization state.
6. a kind of have the photon chip system that controllable nano light source is polarized as described in any one of Claims 1 to 4, its feature exists
In, in addition to：
Waveguide coupling grating or waveguide coupler, positioned at the end of the semiconductor nano-strip and for transmitting described output
Light；
Passive photonic device, for the output light for receiving the waveguide coupling grating or waveguide coupler to transmit.
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| CN201610212532.0A CN105914253B (en) | 2016-04-07 | 2016-04-07 | Polarize controllable nano light source and its microscopic system, photon chip system |
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| CN201610212532.0A CN105914253B (en) | 2016-04-07 | 2016-04-07 | Polarize controllable nano light source and its microscopic system, photon chip system |
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| CN105914253B true CN105914253B (en) | 2017-09-12 |
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| CN106785292A (en) * | 2016-12-28 | 2017-05-31 | 中国计量大学 | Based on graphene film structure Terahertz wave coupler |
| CN110133799B (en) * | 2019-04-23 | 2021-04-06 | 天津大学 | Waveguide integrated polarized light coupler based on graphene and manufacturing method thereof |
| CN112433082B (en) * | 2020-10-30 | 2022-09-20 | 国网山东省电力公司青岛供电公司 | Optical fiber voltage measuring system and method |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102882125A (en) * | 2012-09-19 | 2013-01-16 | 浙江大学 | Method for continuously and linearly adjusting output laser polarization direction of semiconductor nanowire |
| CN103105644A (en) * | 2013-01-16 | 2013-05-15 | 浙江大学 | Metal nanowire surface plasma modulator based on grapheme two-dimension material |
| CN104730738A (en) * | 2015-03-10 | 2015-06-24 | 电子科技大学 | Polarization controller based on graphene |
| CN105140314A (en) * | 2015-08-10 | 2015-12-09 | 上海交通大学 | Micro-nanofiber structure based wide-spectrum graphene photoconductive detector |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102882125A (en) * | 2012-09-19 | 2013-01-16 | 浙江大学 | Method for continuously and linearly adjusting output laser polarization direction of semiconductor nanowire |
| CN103105644A (en) * | 2013-01-16 | 2013-05-15 | 浙江大学 | Metal nanowire surface plasma modulator based on grapheme two-dimension material |
| CN104730738A (en) * | 2015-03-10 | 2015-06-24 | 电子科技大学 | Polarization controller based on graphene |
| CN105140314A (en) * | 2015-08-10 | 2015-12-09 | 上海交通大学 | Micro-nanofiber structure based wide-spectrum graphene photoconductive detector |
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